1375726 AU0903163 31748twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於遮罩總成與鍍膜機台，且特別是關於 一種可減少產品良率損失(yield loss)的遮罩總成與鍍膜機 台。 【先前技術】 一般而言’在半導體元件或是顯示面板的製造過程 中，經常會使用到鍍膜技術來形成所需要的膜層。尤其是， 顯示面板的製造會需要在大面積的玻璃基板上形成透明導 電層，如：銦錫氧化物(indium tin oxide，ITO)。 鑛膜技術大致可分為物理氣相沈積(Physical Vapor Deposition, PVD)以及化學氣相沈積（Chemical Vap〇r1375726 AU0903163 31748twf.doc/n VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a mask assembly and a coating machine, and more particularly to a mask that reduces product yield loss. Cover assembly and coating machine. [Prior Art] Generally, in the manufacturing process of a semiconductor element or a display panel, a plating technique is often used to form a desired film layer. In particular, the manufacture of display panels may require the formation of a transparent conductive layer on a large area of glass substrate, such as indium tin oxide (ITO). The mineral film technology can be roughly divided into physical vapor deposition (PVD) and chemical vapor deposition (Chemical Vap〇r).
Deposition，CVD)。前者主要是藉由物理現象進行薄膜沈 積，而後者主要是以化學反應的方式進行薄膜沈積。其中， 物理氣相沈積更以蒸鍍(evaporati〇n)及濺鍍為 目前的主流。此兩種技術之共同點就是以物理現象的方式 來進行薄膜沉積。在物理氣相沈積中，濺鍍法因其不^ 乾材(target)之選擇’無論是金屬材料或非金屬材料㈣ 為其乾材，因此被廣泛應用於各種產業上。 就蒸鑛而言’其原理大抵是藉著對蒸链材 熱，並利用蒸鍍材料在高溫(接近其熔點）時所星 ^加 蒸氣壓，於減物上進行薄膜的沉積。而__== 是在真空狀態下利用具有動能的粒子撞擊乾 、要 j，以將乾材 .1375726 AU0903163 31748twf.doc/n (欲鍍材料)表面的物質打出，並附著在基板上(被鍍物）而形 成薄膜。 然而，欲鍍材料也會在鍍膜的過程中累積在鍍膜機台 中，而附著不佳的欲鍍材料可能會掉落在產品上而造成產 品的良率損失(yield loss)。 【發明内容】 本發明提出一種遮罩總成，具有防止微粒(particle)掉 洛至產品上的效果。 本發明又提出一種鍍膜機台，具有上述的遮罩總成， 可減少產品良率損失。 本發明提出一種遮罩總成，用以在基材上定義鍍膜區 域，此遮罩總成包括遮罩本體以及擋板。遮罩本體具有開 孔，基材位於遮罩本體的第一側，而開孔暴露出鍍膜區域。 擋板位於開扎旁，並且立於遮罩本體背對基材的第二側。 在本發明之-實施例中，上述擔板由開孔朝向遮罩本 體的外緣傾斜。 在本發明之一實施例中，上述擋板圍繞開孔。 在本發明之-實施例中，上述擔板與開孔 離。 在本發明之-實施例中.，上述遮罩本體包括主框架、 外牆板以及料遮罩。主框架具有相對的第—表面與第二 表面’第-表面面向基材，而擔板配置於第二表面^。^ 牆板配置社_的外緣，且外牆㈣對基材並沿著垂直 1375726 AU0903163 31748twf.doc/n 第一表面的方向延伸。浮置遮罩配置於第一表面上，用以 提供開孔。 本發明又提出一種鍍膜機台，用以在基材上的鍍膜區 域上進行鍍膜，此鐘膜機台包括鑛膜腔室、陰極載台、陽 極載台以及遮罩總成。鑛膜腔室具有腔室開口。陰極載台 配置於腔室開口，用以盛放乾材。陽極載台配置於鑛膜腔 至内’用以承載基材。遮罩總成配置於腔室開口，並位於 陰極載台與陽極載台之間。此遮罩總成包括遮罩本體以及 擋板。遮罩本體具有開孔，基材位於遮罩本體的第一側， 而開孔暴露出鍍膜區域。擋板位於開孔旁，並且立於遮罩 本體背對基材的第二侧。 基於上述，由於本發明的遮罩總成具有擋板之設計， 因此本發明的遮罩總成具有防止微粒掉落至產品上的效 果。由於本發明的鍍膜機台具有上述的遮罩總成，因此本 發明的鍵膜機台可減少產品良率損失。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 本發明的鍍膜機台’係用以在基材上的鍍膜區域上進 行鍍膜，且鍍膜機台具有特殊設計之遮罩總成來防止顆粒 掉落至基材上。以下將以實施例詳細說明本發明。 圖1Α為本發明—實施例之鍍膜機台的示意圖，其中 鍍膜機台尚未進行鍍膜程序。圖1Β為圖1Α之鍍膜機台， 其進行鍍膜程序時的示意圖。請參照圖1Α與圖1Β，鍍膜 1375726 AU0903163 31748twf.doc/n 機台200包括鍍膜腔室210、陰極載台22〇、陽極載台23〇 以及遮罩總成240。 口 鍍膜腔室210具有腔室開口 212。陰極载台22〇配置 於腔室開口 212,用以盛放靶材222。陽極載台23〇配置於 鍍膜腔室210内，用以承載基材202。遮罩總成24〇配置 於腔室開口 212，並位於陰極载台220與陽極載台23〇之 間。在本實施例中，鍍膜機台2〇〇例如是製作顯示面板用 的濺鍍機台，而靶材222例如是銦錫氧化物(Indium Tin # 〇xide，IT0)、銦鋅氧化物(Indium Zinc 〇xide，IZ〇)或其他 的材料。 舉例來說，在鍍膜機台200進行鍍膜程序前，例如可 使用機械手臂（未繪示)將基材2〇2放置於鍍膜腔室21〇内 的陽極載台230上。然後’轉動陰極載台22〇與陽極載台 230，以使鍍膜腔室210與陰極載台22〇密合，從而進行後 績之鑛膜程序。g然，此處僅為舉例說明，鑛膜機台2〇〇 也可以包括其他的構件，如：真空幫浦、控制系統等。本 φ 領域具有通常知識者，當可理解鐘膜機台之基本構件配置 與操作原理’此處便不再贅述。 圖2A為本發明一實施例之遮罩總成的示意圖。圖2B 為圖2A之遮罩總成的部分構件上視示意圖。圖2€圖2a 之遮罩總成的部分構件側視示意圖。圖3為沿圖从之^ 線的剖面示意圖，其中基材置放於陽極載台上。請參照圖 2A、圖2B、圖2C以及圖3,遮罩總成24〇用以在基材2〇2 上定義鑛膜區域204。基材2〇2例如為玻璃基板，置於陽 7 AU0903163 31748twf.doc/n 極載台230上(如圖3所示）。 遮罩總成240包括遮罩本體242以及擋板248。遮罩 本體242具有開孔Η，基材202位於遮罩本體242的第一 側243a’而開孔Η暴露出鐘膜區域204。擋板248位於開 孔Η旁’並且立於遮罩本體242背對基材202的第二侧 243b。其中，擋板248的材質例如為鋁或其他材料。 詳細而言，遮罩本體242包括主框架243、外牆板244 以及浮置遮罩245。此處為便於說明，圖2B與圖2C中未 繪示外牆板244。在本實施例中，主框架243具有相對的 第一表面243a與第二表面243b，第一表面243a面向基材 202，而擋板248配置於第二表面243b上。特別是，擋板 248可由開孔Η朝向遮罩本體242的外緣傾斜，以兼具維 持鍍膜效果與防止微粒污染。換言之，擋板248與第二表 面243b之間的夾角（未標示）並不是直角，而擋板2牝是由 第二表面243b上靠近開孔H的位置朝向遮罩本體242的 外緣擴張。然而，在其他的實施例中，擋板248與第二表 面243b之間的失角也可以是其他任何適當的角度。 外牆板244配置於主框架243的外緣，且外牆板244 背對基材202並沿著垂直第二表面243b的方向延伸。在本 實施例中’主框架243的外緣設置有多個固定孔ρ，而外 牆板^44可藉由螺絲(未繪示）穿過這些固定孔F，以固定於 主框木243上。而類似地，擋板248亦可藉由螺絲來鎖附 於主框架243上。惟此固定方式不限於上面描述，亦可依 實際品求調正’例如採用卡合結構、黏著方式或一體成型 1375726 AU0903163 31748twf.doc/n 等。 浮置遮罩245配置於第一表面243a上，用以提供開 孔Η。浮置遮罩245可視基材202的尺寸、或是鍍膜區域 204的範圍來調整開孔η的大小，以避免欲鍍材料附著在 陽極載台230上。另外，浮置遮罩245可為絕緣材，以避 免短路發生。 請參照圖3，擋板248與開孔Η間隔一距離D，以避 免影響到浮置遮罩245的調整裕度與維持主框架243的結 構穩定。惟本發明不限於此，亦可依實際需求調整擋板248 位於主框架243的第二表面243b上的位置。此外，本實施 例的擋板248是圍繞開孔Η設置，以達到良好的遮蔽微粒 效果’但本發明不限於此’可視實際需要加以調整，例如 在另一未繪示的實施例中，擋板也可以是局部間隔地配置 於主框架上。 由於銦錫氧化物或其他欲鏡材料在進行鑛膜程序之 後會>儿積在主框架243的第二表面243b上，且經觀察，外 牆板244與主框架243的交界區域E的材料附著性不佳， 欲鍍材料容易自主框架243的第二表面243b剝離，而造成 微粒掉落並污染基材202 ’如此將導致產品的良率損失。 因此，擔板248的設置可有效阻擔微粒掉落至基材的 錢膜區域204。換g之，具有遮罩總成240的锻膜機台2〇〇 可減少產品的良率損失。 ^ 要強調的是’雖然上述的鍍膜機台200是一種錢鑛機 台’但本發明的遮罩總成240並不僅限於濺鍍製程所使 9 1375726 AU0903163 31748twf.doc/i 用。換句話說’本發_料總成·可適祕任何 使用遮罩設計之製程機台。 以下，將以實施組與對照組的比較來說明本發明的效 果。 實驗组 首先，提供一卡匣(Cassette)，此卡匣内裝有2〇片美 材202。接著，將單數片（1、3、5...19)的基材202分別^ 入上述的賴機台2GG巾進行鍍雜序，後，量測每片 基材202 ±的微粒數量，並依照微粒的粒徑大小將結果記 錄於表^中’其中粒徑A、粒徑B與粒徑C分別代表由小 至大的一種她。此外，更對實驗組之產品進行良率損失 的分析。 ' 對照组 μ H内偶數片（2、4、6·.·20)的基材2。2 *別傳入未 «Λ 、‘ 248的鍍膜機台（未繪示）中進行鍍膜程序，其 中對’、?、、、且所使用的機台，具有上述鑛膜機台細中除了擔 板24f之外的所有構件。然後，量測每片基材202上的微 粒數里’並依照微粒的粒鼓小將結果記錄於表2中，立 中粒徑^、粒徑B與健c分別代表由小至大的三種粒 仏$對對照組之產品進行良率損失的分析。 =照表1與表2，其中實驗組的微粒數量均明顯低 於數量。由此可知，具有擋板248設計的遮 罩U 〇此夠有效防止微粒掉落至基材搬上。特別是， 實驗組的良率損失約為〇 36% ’而對照組的良率損失約為 1375726 AU0903163 31748twf,doc/n 0.57%。也就是說’具有遮罩總成240的鍍膜機台2〇0更 可以減少產品的良率損失、節省製造成本。Deposition, CVD). The former mainly involves film deposition by physical phenomena, while the latter mainly performs film deposition by means of chemical reaction. Among them, physical vapor deposition is currently the mainstream of evaporating and sputtering. What these two technologies have in common is the physical deposition of thin films. In physical vapor deposition, the sputtering method is widely used in various industries because of its choice of 'target', whether it is a metal material or a non-metal material (4). In the case of steamed ore, the principle is that the deposition of the film is carried out on the subtracted material by heating the steamed chain and using the vapor deposition material at a high temperature (close to its melting point). And __== is to use a kinetic energy particle to hit the dry under vacuum, to j, to dry the material on the surface of the dry material .1375726 AU0903163 31748twf.doc / n (to be plated material), and attached to the substrate (being The plating) forms a film. However, the material to be plated may also accumulate in the coating machine during the coating process, and the poorly attached material may fall on the product and cause a yield loss of the product. SUMMARY OF THE INVENTION The present invention provides a mask assembly having the effect of preventing particles from falling onto the product. The invention further provides a coating machine having the above-mentioned mask assembly, which can reduce product yield loss. The present invention provides a mask assembly for defining a coating area on a substrate, the mask assembly including a mask body and a baffle. The mask body has an opening, the substrate is on a first side of the mask body, and the aperture exposes a coated area. The baffle is located adjacent to the opening and is disposed on the second side of the mask body opposite the substrate. In an embodiment of the invention, the support plate is inclined by the opening toward the outer edge of the mask body. In an embodiment of the invention, the baffle surrounds the aperture. In the embodiment of the invention, the support plate is separated from the opening. In an embodiment of the invention, the mask body comprises a main frame, an outer wall panel and a material mask. The main frame has opposite first and second surfaces. The first surface faces the substrate, and the carrier is disposed on the second surface. ^ The outer edge of the wall panel, and the outer wall (4) extends toward the substrate and along the direction of the first surface of the vertical 1375726 AU0903163 31748twf.doc/n. A floating mask is disposed on the first surface to provide an opening. The present invention further provides a coating machine for coating a coating area on a substrate, the filming machine including a film chamber, a cathode stage, an anode stage, and a mask assembly. The film chamber has a chamber opening. The cathode stage is disposed in the chamber opening for holding dry material. The anode stage is disposed inside the mineral film chamber to carry the substrate. The mask assembly is disposed in the chamber opening and is located between the cathode stage and the anode stage. The mask assembly includes a mask body and a baffle. The mask body has an opening, the substrate is on a first side of the mask body, and the opening exposes a coating area. The baffle is located adjacent the opening and extends from the second side of the mask body opposite the substrate. Based on the above, since the mask assembly of the present invention has a design of a baffle, the mask assembly of the present invention has an effect of preventing particles from falling onto the product. Since the coating machine of the present invention has the above-described mask assembly, the key film machine of the present invention can reduce product yield loss. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] The coating machine of the present invention is used for coating a coating area on a substrate, and the coating machine has a specially designed mask assembly to prevent particles from falling onto the substrate. The invention will be described in detail below by way of examples. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view of a coating machine of the present invention, in which the coating machine has not been subjected to a coating process. Fig. 1 is a schematic view showing a coating machine of Fig. 1 when a coating process is performed. Referring to FIG. 1A and FIG. 1A, the coating 1375726 AU0903163 31748twf.doc/n machine 200 includes a coating chamber 210, a cathode stage 22, an anode stage 23A, and a mask assembly 240. The mouth coating chamber 210 has a chamber opening 212. The cathode stage 22 is disposed in the chamber opening 212 for holding the target 222. The anode stage 23 is disposed in the coating chamber 210 for carrying the substrate 202. The mask assembly 24 is disposed in the chamber opening 212 and between the cathode stage 220 and the anode stage 23A. In the present embodiment, the coating machine 2 is, for example, a sputtering machine for producing a display panel, and the target 222 is, for example, indium tin oxide (Indium Tin # 〇xide, IT0), indium zinc oxide (Indium). Zinc 〇xide, IZ〇) or other materials. For example, before the coating machine 200 performs the coating process, the substrate 2〇2 can be placed on the anode stage 230 in the coating chamber 21, for example, using a robot arm (not shown). Then, the cathode stage 22 and the anode stage 230 are rotated to bring the plating chamber 210 into contact with the cathode stage 22, thereby performing a mineral film program of a later stage. g, here is only an example, the film machine 2 can also include other components, such as: vacuum pump, control system and so on. This φ field has the general knowledge, and it can be understood that the basic component configuration and operation principle of the clock machine will not be described here. 2A is a schematic view of a mask assembly in accordance with an embodiment of the present invention. 2B is a top plan view of a portion of the mask assembly of FIG. 2A. Figure 2 is a side elevational view of a portion of the component of the mask assembly of Figure 2a. Fig. 3 is a schematic cross-sectional view taken along the line of the drawing, in which the substrate is placed on the anode stage. Referring to Figures 2A, 2B, 2C and 3, the mask assembly 24 is used to define the mineral film region 204 on the substrate 2〇2. The substrate 2〇2 is, for example, a glass substrate placed on the anode 7 AU0903163 31748 twf.doc/n pole stage 230 (shown in FIG. 3). The mask assembly 240 includes a mask body 242 and a baffle 248. The mask body 242 has an aperture Η, the substrate 202 is located on the first side 243a' of the mask body 242 and the aperture Η exposes the membrane region 204. The baffle 248 is located beside the opening ’ and stands on the second side 243b of the mask body 242 opposite the substrate 202. The material of the baffle 248 is, for example, aluminum or other materials. In detail, the mask body 242 includes a main frame 243, an outer wall panel 244, and a floating mask 245. Here, for convenience of explanation, the outer wall panel 244 is not shown in Figs. 2B and 2C. In the present embodiment, the main frame 243 has opposing first and second surfaces 243a, 243b, the first surface 243a facing the substrate 202, and the baffle 248 being disposed on the second surface 243b. In particular, the baffle 248 can be tilted toward the outer edge of the mask body 242 by the aperture rim to maintain both the coating effect and particle contamination. In other words, the angle (not shown) between the baffle 248 and the second surface 243b is not a right angle, and the baffle 2 is expanded toward the outer edge of the mask body 242 by the position on the second surface 243b near the opening H. However, in other embodiments, the angle of loss between the baffle 248 and the second surface 243b can be any other suitable angle. The outer wall panel 244 is disposed on the outer edge of the main frame 243, and the outer wall panel 244 extends away from the base material 202 and along the direction perpendicular to the second surface 243b. In the present embodiment, the outer edge of the main frame 243 is provided with a plurality of fixing holes ρ, and the outer wall panel 44 can be fixed to the main frame wood 243 by screws (not shown) passing through the fixing holes F. . Similarly, the baffle 248 can also be attached to the main frame 243 by screws. However, the fixing method is not limited to the above description, and may be adjusted according to the actual product, for example, by a snap-fit structure, an adhesive method, or an integral molding 1375726 AU0903163 31748twf.doc/n. A floating mask 245 is disposed on the first surface 243a for providing an aperture. The floating mask 245 can adjust the size of the opening η depending on the size of the substrate 202 or the range of the coating region 204 to prevent the material to be plated from adhering to the anode stage 230. Alternatively, the floating mask 245 can be an insulating material to avoid short circuits. Referring to Figure 3, the baffle 248 is spaced a distance D from the aperture 以 to avoid affecting the adjustment margin of the floating mask 245 and maintaining the structural stability of the main frame 243. However, the present invention is not limited thereto, and the position of the shutter 248 on the second surface 243b of the main frame 243 may be adjusted according to actual needs. In addition, the baffle 248 of the present embodiment is disposed around the aperture 以 to achieve a good shielding effect. However, the present invention is not limited thereto, and may be adjusted according to actual needs, for example, in another embodiment not shown, The plates may also be arranged on the main frame at partial intervals. Since the indium tin oxide or other material of the mirror material is deposited on the second surface 243b of the main frame 243 after the film filming process, and the material of the boundary region E between the outer wall panel 244 and the main frame 243 is observed, Poor adhesion, the material to be plated is easily peeled off by the second surface 243b of the autonomous frame 243, causing the particles to fall and contaminate the substrate 202' which would result in yield loss of the product. Therefore, the provision of the support plate 248 can effectively block the particulates from falling onto the money film region 204 of the substrate. In other words, the forging machine 2 with the mask assembly 240 can reduce the yield loss of the product. ^ It is emphasized that 'although the above-described coating machine 200 is a money mining machine', the mask assembly 240 of the present invention is not limited to the sputtering process 9 1375726 AU0903163 31748twf.doc/i. In other words, the 'this hair_material assembly' can be used to make any process machine that uses a mask design. Hereinafter, the effects of the present invention will be described by comparison between an implementation group and a control group. Experimental group First, a cassette (Cassette) was provided, which contained 2 pieces of slab material 202. Next, the substrate 202 of the singular sheet (1, 3, 5, ... 19) is respectively subjected to the plating order of the above-mentioned slab 2 GG towel, and then the number of particles of each substrate is measured by 0.2 ± According to the particle size of the particles, the results are recorded in the table 'where the particle size A, the particle size B and the particle diameter C represent a small to large one, respectively. In addition, an analysis of yield loss was performed on the products of the experimental group. 'The substrate of the control group μ 2 (2, 4, 6 ·.·20) 2. 2 * Do not pass into the coating machine (not shown) of the « Λ , ' 248 coating process, The machine used for ', ?, , and , has all the components except the support plate 24f of the above-mentioned mineral film machine. Then, the number of particles on each substrate 202 is measured and the results are recorded in Table 2 according to the particle size of the particles. The particle size of the substrate, the particle size B and the health c respectively represent three particles from small to large.仏$ Analysis of yield loss of products in the control group. = According to Table 1 and Table 2, the number of particles in the experimental group was significantly lower than the number. It can be seen that the mask U having the baffle 248 design is effective in preventing the particles from falling onto the substrate. In particular, the yield loss of the experimental group was about 36%' while the yield loss of the control group was about 1375726 AU0903163 31748twf, doc/n 0.57%. That is to say, the coating machine 2〇0 having the mask assembly 240 can reduce the yield loss of the product and save the manufacturing cost.
表1 實驗组 粒徑A 粒徑B 粒徑C 總計 1 104 42 11 157 3 41 1 19 61 5 56 35 13 104 7 84 53 20 157 9 48 53 18 119 11 128 47 30 205 13 167 106 44 317 15 107 129 33 269 17 206 143 31 380 19 185 141 34 360 平均 112.6 75 25.3 212.9 表2 對照組 粒徑A 粒徑B 粒徑C 2 739 477 90 1306 4 679 440 74 1193 6 685 515 92 1292 8 585 459 100 1144 一 10 739 502 89 1330 12 747 516 102 1365 14 730 521 84 1335 725 504 87 1316 18 710 534 87 1331 20 850 558 96 1504 平均 718.9 502.6 90.1 1311.6 可由發明的遮罩總成具有擔板之設計，擋板 總成能夠有’因此，本發明的遮罩 的鐘膜機台上。另外’由於本發明 -有上相遮罩總成，因此本發明的鐘膜機台 1375726 AU0903163 31748twf.doc/n 可以使關單的設計來減少產品的良率損失，進 造成本。 【噌衣 雖然本發明已以實施方式揭露如上，然其並 定本發明，任何所屬技術領域中具有通常知識者】以限 離本發明之精神和範圍内，當可作些許之更動與潤不脫 ^發明之保護範圍當視後附之申請專利範圍所界定者= 【圖式簡單說明】 圖1A為本發明一實施例之鍍膜機台的示意圖其 鍍膜機台尚未進行鍍膜程序。 一 圖1B為圖1A之鍍膜機台’其進行鍍膜程序時的示意 圖。 * 圖2A為本發明一實施例之遮罩總成的示意圖。 圖2B為圖2A之遮罩總成的部分構件上視示意圖。 圖2C圖2A之遮罩總成的部分構件側視示意圖。 圖3為沿圖2A之a-a，線的剖面示意圖，其中基材置 放於陽極載台上。 12 1375726 AU0903163 31748twf.doc/n 【主要元件符號說明】 200 :鍍膜機台 202 :基材 204 :鍍膜區域 210 :鍍膜腔室 212 :腔室開口 220 :陰極載台 222 :靶材 230 :陽極載台 240 :遮罩總成 242 :遮罩本體 243 :主框架 243a :第一侧、第一表面 243b :第二側、第二表面 244 :外牆板 245 :浮置遮罩 248 :擋板 a-a’ ：線 D :距離 E:交界區域 F :固定孔 Η :開孔 13Table 1 Experimental group particle size A particle size B particle size C total 1 104 42 11 157 3 41 1 19 61 5 56 35 13 104 7 84 53 20 157 9 48 53 18 119 11 128 47 30 205 13 167 106 44 317 15 107 129 33 269 17 206 143 31 380 19 185 141 34 360 Average 112.6 75 25.3 212.9 Table 2 Control particle size A Particle size B Particle size C 2 739 477 90 1306 4 679 440 74 1193 6 685 515 92 1292 8 585 459 100 1144 - 10 739 502 89 1330 12 747 516 102 1365 14 730 521 84 1335 725 504 87 1316 18 710 534 87 1331 20 850 558 96 1504 Average 718.9 502.6 90.1 1311.6 The inventive mask assembly has a slab design, The baffle assembly can have 'therefore, the mask of the present invention is on the clock machine table. Further, since the present invention has the upper phase mask assembly, the clock machine 1375726 AU0903163 31748twf.doc/n of the present invention can make the design of the order to reduce the yield loss of the product. Although the present invention has been disclosed in the above embodiments, the present invention is not limited to the spirit and scope of the present invention, and may be modified and invigorated. The scope of protection of the invention is defined by the scope of the appended patent application. [FIG. 1A] FIG. 1A is a schematic view of a coating machine according to an embodiment of the present invention, and the coating machine has not been subjected to a coating process. Figure 1B is a schematic view of the coating machine of Figure 1A when it is subjected to a coating process. * Figure 2A is a schematic view of a mask assembly in accordance with an embodiment of the present invention. 2B is a top plan view of a portion of the mask assembly of FIG. 2A. 2C is a side elevational view of a portion of the components of the mask assembly of FIG. 2A. Figure 3 is a cross-sectional view taken along line a-a of Figure 2A with the substrate placed on the anode stage. 12 1375726 AU0903163 31748twf.doc/n [Description of main component symbols] 200: Coating machine 202: Substrate 204: Coating area 210: Coating chamber 212: Chamber opening 220: Cathode stage 222: Target 230: Anode loading Table 240: mask assembly 242: mask body 243: main frame 243a: first side, first surface 243b: second side, second surface 244: outer wall panel 245: floating mask 248: flapper a -a' : line D : distance E: junction area F : fixed hole 开 : opening 13