TWI373072B - Plasma control using dual cathode frequency mixing - Google Patents

Plasma control using dual cathode frequency mixing

Info

Publication number
TWI373072B
TWI373072B TW097146344A TW97146344A TWI373072B TW I373072 B TWI373072 B TW I373072B TW 097146344 A TW097146344 A TW 097146344A TW 97146344 A TW97146344 A TW 97146344A TW I373072 B TWI373072 B TW I373072B
Authority
TW
Taiwan
Prior art keywords
frequency mixing
plasma control
dual cathode
cathode frequency
dual
Prior art date
Application number
TW097146344A
Other languages
English (en)
Other versions
TW200943410A (en
Inventor
Jingbao Liu
Taeho Shen
Bryan Y Pu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200943410A publication Critical patent/TW200943410A/zh
Application granted granted Critical
Publication of TWI373072B publication Critical patent/TWI373072B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW097146344A 2007-11-29 2008-11-28 Plasma control using dual cathode frequency mixing TWI373072B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/947,663 US7736914B2 (en) 2007-11-29 2007-11-29 Plasma control using dual cathode frequency mixing and controlling the level of polymer formation

Publications (2)

Publication Number Publication Date
TW200943410A TW200943410A (en) 2009-10-16
TWI373072B true TWI373072B (en) 2012-09-21

Family

ID=40676141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097146344A TWI373072B (en) 2007-11-29 2008-11-28 Plasma control using dual cathode frequency mixing

Country Status (3)

Country Link
US (1) US7736914B2 (zh)
TW (1) TWI373072B (zh)
WO (1) WO2009070562A1 (zh)

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TWI556309B (zh) * 2009-06-19 2016-11-01 半導體能源研究所股份有限公司 電漿處理裝置，形成膜的方法，和薄膜電晶體的製造方法
JP5442403B2 (ja) * 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
US8658541B2 (en) * 2010-01-15 2014-02-25 Applied Materials, Inc. Method of controlling trench microloading using plasma pulsing
JP6045646B2 (ja) * 2010-08-23 2016-12-14 東京エレクトロン株式会社 プラズマエッチング方法
WO2012156062A1 (de) * 2011-05-13 2012-11-22 Leybold Optics Gmbh Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
CN102280342B (zh) * 2011-08-19 2013-08-21 中微半导体设备(上海)有限公司 等离子体处理装置
US20140202634A1 (en) * 2013-01-23 2014-07-24 Applied Materials, Inc. Radial transmission line based plasma source
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CN118588523A (zh) * 2021-06-21 2024-09-03 东京毅力科创株式会社 等离子体处理装置和电源系统

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Also Published As

Publication number Publication date
US20090142859A1 (en) 2009-06-04
US7736914B2 (en) 2010-06-15
WO2009070562A1 (en) 2009-06-04
TW200943410A (en) 2009-10-16

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MM4A Annulment or lapse of patent due to non-payment of fees