TWI371065B - Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method - Google Patents

Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method

Info

Publication number
TWI371065B
TWI371065B TW097107000A TW97107000A TWI371065B TW I371065 B TWI371065 B TW I371065B TW 097107000 A TW097107000 A TW 097107000A TW 97107000 A TW97107000 A TW 97107000A TW I371065 B TWI371065 B TW I371065B
Authority
TW
Taiwan
Prior art keywords
endpoint detection
plasma reactor
detection device
time control
realizing real
Prior art date
Application number
TW097107000A
Other languages
English (en)
Other versions
TW200905744A (en
Inventor
Kun Joo Park
Gwang Hoon Han
Kee Hyun Kim
Weon Mook Lee
Kyounghoon Han
Heeyeop Chae
Original Assignee
Dms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dms Co Ltd filed Critical Dms Co Ltd
Publication of TW200905744A publication Critical patent/TW200905744A/zh
Application granted granted Critical
Publication of TWI371065B publication Critical patent/TWI371065B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW097107000A 2007-07-24 2008-02-29 Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method TWI371065B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070073864A KR100892248B1 (ko) 2007-07-24 2007-07-24 플라즈마 반응기의 실시간 제어를 실현하는 종말점 검출장치 및 이를 포함하는 플라즈마 반응기 및 그 종말점 검출방법

Publications (2)

Publication Number Publication Date
TW200905744A TW200905744A (en) 2009-02-01
TWI371065B true TWI371065B (en) 2012-08-21

Family

ID=40295756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107000A TWI371065B (en) 2007-07-24 2008-02-29 Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method

Country Status (4)

Country Link
US (2) US8049872B2 (zh)
KR (1) KR100892248B1 (zh)
CN (1) CN100583392C (zh)
TW (1) TWI371065B (zh)

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* Cited by examiner, † Cited by third party
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JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
CN101930438B (zh) * 2009-06-19 2016-08-31 阿里巴巴集团控股有限公司 一种搜索结果生成方法及信息搜索系统
US20100332010A1 (en) * 2009-06-30 2010-12-30 Brian Choi Seasoning plasma processing systems
KR101708078B1 (ko) * 2009-06-30 2017-02-17 램 리써치 코포레이션 플라즈마 챔버의 검정을 위한 에칭 레이트 균일성을 예측하는 방법 및 장치
KR101117928B1 (ko) 2010-06-07 2012-02-29 명지대학교 산학협력단 플라즈마 공정 진단 시스템 및 이에 있어서 종료점 검출 방법 및 장치
JP5699795B2 (ja) * 2011-05-12 2015-04-15 富士通セミコンダクター株式会社 半導体装置の製造方法及半導体製造装置
KR101794066B1 (ko) 2011-08-31 2017-11-07 삼성전자주식회사 플라즈마 공정 최적화 방법
CN102332383B (zh) * 2011-09-23 2014-12-10 中微半导体设备(上海)有限公司 等离子体刻蚀工艺的终点监控方法
US9316675B2 (en) * 2012-09-06 2016-04-19 Mks Instruments, Inc. Secondary plasma detection systems and methods
KR101529827B1 (ko) * 2014-06-16 2015-06-17 성균관대학교산학협력단 플라즈마 식각 공정의 식각 종료점 검출 방법
US10453653B2 (en) * 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10896833B2 (en) 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US10910201B1 (en) * 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
CN111081584B (zh) * 2019-12-30 2022-07-19 中国科学院电子学研究所 基于光谱仪的离子刻蚀终点检测装置及应用其的刻蚀系统
KR102375527B1 (ko) 2020-06-30 2022-03-18 주식회사 프라임솔루션 다채널 광스펙트럼 분석을 위한 머신러닝 모델을 이용한 플라즈마 식각공정 진단장치 및 이를 이용한 플라즈마 식각공정 진단방법
US12080574B2 (en) * 2020-07-17 2024-09-03 Applied Materials, Inc. Low open area and coupon endpoint detection
JP7419566B2 (ja) * 2021-04-13 2024-01-22 ヴェリティー インストルメンツ，インコーポレイテッド スペクトル・フィルタリングのためのシステム、機器、及び方法
US12111341B2 (en) * 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US20240234111A9 (en) * 2022-10-25 2024-07-11 Tokyo Electron Limited Method for OES Data Collection and Endpoint Detection

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US6368975B1 (en) 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
US6564114B1 (en) * 1999-09-08 2003-05-13 Advanced Micro Devices, Inc. Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra
KR100708423B1 (ko) * 1999-09-08 2007-04-18 어드밴스드 마이크로 디바이시즈, 인코포레이티드 발광 스펙트럼의 주성분 분석을 이용하여 식각 종료점을 결정하는 방법 및 이를 포함하는 웨이퍼 식각 방법
KR20030006812A (ko) * 2001-07-16 2003-01-23 삼성전자 주식회사 건식 식각 장치
US7006205B2 (en) * 2002-05-30 2006-02-28 Applied Materials Inc. Method and system for event detection in plasma processes
US7505879B2 (en) * 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
JP2004047885A (ja) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd 半導体製造装置のモニタリングシステム及びモニタリング方法
WO2004019396A1 (ja) * 2002-08-13 2004-03-04 Tokyo Electron Limited プラズマ処理方法及びプラズマ処理装置
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
US6952657B2 (en) * 2003-09-10 2005-10-04 Peak Sensor Systems Llc Industrial process fault detection using principal component analysis
US20060000799A1 (en) * 2004-06-30 2006-01-05 Hyun-Ho Doh Methods and apparatus for determining endpoint in a plasma processing system
JP2007073751A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp プラズマ処理装置および処理方法

Also Published As

Publication number Publication date
US8223329B2 (en) 2012-07-17
CN100583392C (zh) 2010-01-20
US20120041584A1 (en) 2012-02-16
US20090029489A1 (en) 2009-01-29
KR20090010608A (ko) 2009-01-30
TW200905744A (en) 2009-02-01
KR100892248B1 (ko) 2009-04-09
US8049872B2 (en) 2011-11-01
CN101355012A (zh) 2009-01-28

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