TWI371041B - Non-volatile memory and method for predictive programming - Google Patents

Non-volatile memory and method for predictive programming

Info

Publication number
TWI371041B
TWI371041B TW097113094A TW97113094A TWI371041B TW I371041 B TWI371041 B TW I371041B TW 097113094 A TW097113094 A TW 097113094A TW 97113094 A TW97113094 A TW 97113094A TW I371041 B TWI371041 B TW I371041B
Authority
TW
Taiwan
Prior art keywords
volatile memory
predictive programming
predictive
programming
volatile
Prior art date
Application number
TW097113094A
Other languages
English (en)
Other versions
TW200907975A (en
Inventor
Raul-Adrian Cernea
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/733,706 external-priority patent/US7551483B2/en
Priority claimed from US11/733,694 external-priority patent/US7643348B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200907975A publication Critical patent/TW200907975A/zh
Application granted granted Critical
Publication of TWI371041B publication Critical patent/TWI371041B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW097113094A 2007-04-10 2008-04-10 Non-volatile memory and method for predictive programming TWI371041B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/733,706 US7551483B2 (en) 2007-04-10 2007-04-10 Non-volatile memory with predictive programming
US11/733,694 US7643348B2 (en) 2007-04-10 2007-04-10 Predictive programming in non-volatile memory

Publications (2)

Publication Number Publication Date
TW200907975A TW200907975A (en) 2009-02-16
TWI371041B true TWI371041B (en) 2012-08-21

Family

ID=39712596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097113094A TWI371041B (en) 2007-04-10 2008-04-10 Non-volatile memory and method for predictive programming

Country Status (6)

Country Link
EP (1) EP2135252A2 (zh)
JP (1) JP2010524147A (zh)
KR (1) KR20100028019A (zh)
CN (1) CN101711414B (zh)
TW (1) TWI371041B (zh)
WO (1) WO2008124760A2 (zh)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007132453A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Distortion estimation and cancellation in memory devices
WO2007132456A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
WO2007132452A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7706182B2 (en) 2006-12-03 2010-04-27 Anobit Technologies Ltd. Adaptive programming of analog memory cells using statistical characteristics
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8369141B2 (en) 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8527819B2 (en) 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
KR101509836B1 (ko) 2007-11-13 2015-04-06 애플 인크. 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
WO2009151894A1 (en) * 2008-06-12 2009-12-17 Sandisk Corporation Nonvolatile memory and method with index programming and reduced verify
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8223556B2 (en) * 2009-11-25 2012-07-17 Sandisk Technologies Inc. Programming non-volatile memory with a reduced number of verify operations
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8681562B2 (en) 2011-01-10 2014-03-25 Micron Technology, Inc. Memories and methods of programming memories
JP2014053060A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体記憶装置及びその制御方法
KR102449196B1 (ko) * 2016-01-15 2022-09-29 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
JP6539608B2 (ja) * 2016-03-15 2019-07-03 東芝メモリ株式会社 半導体記憶装置
CN110556146A (zh) * 2018-06-01 2019-12-10 北京兆易创新科技股份有限公司 一种存储单元的编程方法、装置、电子设备及存储介质
CN110556145A (zh) * 2018-06-01 2019-12-10 北京兆易创新科技股份有限公司 一种存储单元的编程方法、装置、电子设备及存储介质
CN110556150A (zh) * 2018-06-01 2019-12-10 北京兆易创新科技股份有限公司 一种存储单元的编程方法、装置、电子设备及存储介质
CN110610739B (zh) * 2019-09-17 2021-06-18 珠海创飞芯科技有限公司 一种阈值电压调节方法
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0453096A (ja) * 1990-06-19 1992-02-20 Toshiba Corp アナログ記憶装置
US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
EP0913832B1 (en) * 1997-11-03 2003-07-23 STMicroelectronics S.r.l. Method for multilevel programming of a nonvolatile memory, and a multilevel nonvolatile memory
EP1074995B1 (en) * 1999-08-03 2005-10-26 STMicroelectronics S.r.l. Method for programming multi-level non-volatile memories by controlling the gate voltage
US6504760B1 (en) * 2001-06-22 2003-01-07 Intel Corporation Charging a capacitance of a memory cell and charger
US7042766B1 (en) * 2004-07-22 2006-05-09 Spansion, Llc Method of programming a flash memory device using multilevel charge storage

Also Published As

Publication number Publication date
WO2008124760A3 (en) 2008-11-27
CN101711414A (zh) 2010-05-19
JP2010524147A (ja) 2010-07-15
CN101711414B (zh) 2013-06-26
EP2135252A2 (en) 2009-12-23
TW200907975A (en) 2009-02-16
KR20100028019A (ko) 2010-03-11
WO2008124760A2 (en) 2008-10-16

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MM4A Annulment or lapse of patent due to non-payment of fees