TWI369742B - Device and method of manufacture for a low noise junction field effect transistor - Google Patents

Device and method of manufacture for a low noise junction field effect transistor

Info

Publication number
TWI369742B
TWI369742B TW096134208A TW96134208A TWI369742B TW I369742 B TWI369742 B TW I369742B TW 096134208 A TW096134208 A TW 096134208A TW 96134208 A TW96134208 A TW 96134208A TW I369742 B TWI369742 B TW I369742B
Authority
TW
Taiwan
Prior art keywords
manufacture
field effect
effect transistor
low noise
junction field
Prior art date
Application number
TW096134208A
Other languages
English (en)
Other versions
TW200822237A (en
Inventor
Dominik Schmidt
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200822237A publication Critical patent/TW200822237A/zh
Application granted granted Critical
Publication of TWI369742B publication Critical patent/TWI369742B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW096134208A 2006-09-13 2007-09-13 Device and method of manufacture for a low noise junction field effect transistor TWI369742B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/521,260 US7569874B2 (en) 2006-09-13 2006-09-13 Device and method of manufacture for a low noise junction field effect transistor

Publications (2)

Publication Number Publication Date
TW200822237A TW200822237A (en) 2008-05-16
TWI369742B true TWI369742B (en) 2012-08-01

Family

ID=39168667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134208A TWI369742B (en) 2006-09-13 2007-09-13 Device and method of manufacture for a low noise junction field effect transistor

Country Status (5)

Country Link
US (1) US7569874B2 (zh)
CN (1) CN101501827B (zh)
DE (1) DE112007001951T5 (zh)
TW (1) TWI369742B (zh)
WO (1) WO2008034026A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3114695A1 (en) * 2020-04-08 2021-10-08 National Research Council Of Canada Distributed inductance integrated field effect transistor structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373253A (en) * 1981-04-13 1983-02-15 National Semiconductor Corporation Integrated CMOS process with JFET
CN1004853B (zh) * 1985-08-29 1989-07-19 基思利仪器公司 结型场效应晶体管电阻式差动放大器
US6005267A (en) * 1995-09-29 1999-12-21 Itt Corporation MES/MIS FET with split-gate RF input
JPH10256273A (ja) 1997-03-13 1998-09-25 Toshiba Corp 電界効果トランジスタおよびその製造方法ならびに高周波電力増幅回路
US6624030B2 (en) * 2000-12-19 2003-09-23 Advanced Power Devices, Inc. Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
DE10101744C1 (de) * 2001-01-16 2002-08-08 Siemens Ag Elektronische Schalteinrichtung und Betriebsverfahren
JP2006196789A (ja) 2005-01-14 2006-07-27 Nikon Corp 接合型電界効果トランジスタ及びその製造方法、並びに固体撮像素子

Also Published As

Publication number Publication date
CN101501827A (zh) 2009-08-05
TW200822237A (en) 2008-05-16
CN101501827B (zh) 2010-11-03
WO2008034026A1 (en) 2008-03-20
US7569874B2 (en) 2009-08-04
DE112007001951T5 (de) 2009-07-30
US20080061325A1 (en) 2008-03-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees