TWI368986B - - Google Patents
Info
- Publication number
- TWI368986B TWI368986B TW097133669A TW97133669A TWI368986B TW I368986 B TWI368986 B TW I368986B TW 097133669 A TW097133669 A TW 097133669A TW 97133669 A TW97133669 A TW 97133669A TW I368986 B TWI368986 B TW I368986B
- Authority
- TW
- Taiwan
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97133669A TW201011897A (en) | 2008-09-02 | 2008-09-02 | NOR type Flash member structure with dual-ion implantation and manufacturing method thereofmanufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97133669A TW201011897A (en) | 2008-09-02 | 2008-09-02 | NOR type Flash member structure with dual-ion implantation and manufacturing method thereofmanufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201011897A TW201011897A (en) | 2010-03-16 |
| TWI368986B true TWI368986B (en) | 2012-07-21 |
Family
ID=44828787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97133669A TW201011897A (en) | 2008-09-02 | 2008-09-02 | NOR type Flash member structure with dual-ion implantation and manufacturing method thereofmanufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201011897A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI381491B (en) * | 2009-09-18 | 2013-01-01 | Eon Silicon Solution Inc | Manufacturing Method of NOR - type Flash Memory with Phosphorus Arsenic Ion Planting |
-
2008
- 2008-09-02 TW TW97133669A patent/TW201011897A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW201011897A (en) | 2010-03-16 |