TWI368912B - Memory apparatus, and method of averagely using blocks of a flash memory - Google Patents

Memory apparatus, and method of averagely using blocks of a flash memory

Info

Publication number
TWI368912B
TWI368912B TW097115763A TW97115763A TWI368912B TW I368912 B TWI368912 B TW I368912B TW 097115763 A TW097115763 A TW 097115763A TW 97115763 A TW97115763 A TW 97115763A TW I368912 B TWI368912 B TW I368912B
Authority
TW
Taiwan
Prior art keywords
averagely
blocks
memory
flash memory
memory apparatus
Prior art date
Application number
TW097115763A
Other languages
English (en)
Other versions
TW200905685A (en
Inventor
Hung Jung Hsu
Hsiao Te Chang
Original Assignee
Silicon Motion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Motion Inc filed Critical Silicon Motion Inc
Publication of TW200905685A publication Critical patent/TW200905685A/zh
Application granted granted Critical
Publication of TWI368912B publication Critical patent/TWI368912B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
TW097115763A 2007-07-25 2008-04-29 Memory apparatus, and method of averagely using blocks of a flash memory TWI368912B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95179407P 2007-07-25 2007-07-25
US11/972,658 US7908423B2 (en) 2007-07-25 2008-01-11 Memory apparatus, and method of averagely using blocks of a flash memory

Publications (2)

Publication Number Publication Date
TW200905685A TW200905685A (en) 2009-02-01
TWI368912B true TWI368912B (en) 2012-07-21

Family

ID=40307684

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097115763A TWI368912B (en) 2007-07-25 2008-04-29 Memory apparatus, and method of averagely using blocks of a flash memory

Country Status (3)

Country Link
US (1) US7908423B2 (zh)
CN (1) CN101354918B (zh)
TW (1) TWI368912B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8051241B2 (en) * 2009-05-07 2011-11-01 Seagate Technology Llc Wear leveling technique for storage devices
US20100318719A1 (en) * 2009-06-12 2010-12-16 Micron Technology, Inc. Methods, memory controllers and devices for wear leveling a memory
WO2011010348A1 (ja) * 2009-07-23 2011-01-27 株式会社日立製作所 フラッシュメモリ装置
CN102033811B (zh) * 2009-09-24 2013-04-17 慧荣科技股份有限公司 用于管理闪存多个区块的方法和相关记忆装置及其控制器
US9183134B2 (en) * 2010-04-22 2015-11-10 Seagate Technology Llc Data segregation in a storage device
US9104546B2 (en) * 2010-05-24 2015-08-11 Silicon Motion Inc. Method for performing block management using dynamic threshold, and associated memory device and controller thereof
CN102693095B (zh) * 2011-03-25 2014-12-31 国基电子（上海）有限公司 数据操作方法及数据操作装置
KR101467941B1 (ko) 2011-04-26 2014-12-02 엘에스아이 코포레이션 비휘발성 저장부에 대한 가변 오버­프로비저닝
TWI489466B (zh) * 2011-06-15 2015-06-21 Phison Electronics Corp 記憶體抹除方法、記憶體控制器與記憶體儲存裝置
TWI562153B (en) * 2011-06-15 2016-12-11 Phison Electronics Corp Memory erasing method, memory controller and memory storage apparatus
CN104598167B (zh) * 2011-06-27 2018-01-05 群联电子股份有限公司 存储器抹除方法、存储器控制器与存储器储存装置
CN102855192B (zh) * 2011-06-27 2016-01-20 群联电子股份有限公司 存储器抹除方法、存储器控制器与存储器储存装置
CN104572489B (zh) 2013-10-23 2019-12-24 深圳市腾讯计算机系统有限公司 磨损均衡方法及装置
KR102287760B1 (ko) 2014-10-29 2021-08-09 삼성전자주식회사 메모리 시스템 및 상기 메모리 시스템의 동작 방법
KR102252378B1 (ko) 2014-10-29 2021-05-14 삼성전자주식회사 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법
KR102263046B1 (ko) 2014-10-29 2021-06-09 삼성전자주식회사 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법
KR102258126B1 (ko) 2015-03-19 2021-05-28 삼성전자주식회사 메모리 컨트롤러의 작동 방법, 이를 포함하는 데이터 저장 장치, 및 이를 포함하는 데이터 처리 시스템
CN106933492B (zh) * 2015-12-30 2020-05-22 伊姆西Ip控股有限责任公司 有助于固态硬盘的磨损平衡的方法和装置
KR20190023247A (ko) * 2017-08-28 2019-03-08 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
TWI649759B (zh) * 2017-09-28 2019-02-01 慧榮科技股份有限公司 資料儲存裝置與將資料寫入記憶體裝置之方法
TWI643065B (zh) * 2017-12-20 2018-12-01 慧榮科技股份有限公司 用於動態執行記憶體回收資料儲存裝置與操作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
KR100577380B1 (ko) * 1999-09-29 2006-05-09 삼성전자주식회사 플래시 메모리와 그 제어 방법
US6742078B1 (en) * 1999-10-05 2004-05-25 Feiya Technology Corp. Management, data link structure and calculating method for flash memory

Also Published As

Publication number Publication date
US20090119448A1 (en) 2009-05-07
CN101354918B (zh) 2011-10-19
US7908423B2 (en) 2011-03-15
TW200905685A (en) 2009-02-01
CN101354918A (zh) 2009-01-28

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