TWI368846B - Method of wear leveling for non-volatile memory - Google Patents

Method of wear leveling for non-volatile memory

Info

Publication number
TWI368846B
TWI368846B TW097123016A TW97123016A TWI368846B TW I368846 B TWI368846 B TW I368846B TW 097123016 A TW097123016 A TW 097123016A TW 97123016 A TW97123016 A TW 97123016A TW I368846 B TWI368846 B TW I368846B
Authority
TW
Taiwan
Prior art keywords
volatile memory
wear leveling
leveling
wear
volatile
Prior art date
Application number
TW097123016A
Other languages
English (en)
Other versions
TW200943059A (en
Inventor
Yen Ming Chen
Shih Chieh Tai
Yung Li Ji
Chih Nan Yen
Fuja Shone
Original Assignee
Skymedi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skymedi Corp filed Critical Skymedi Corp
Publication of TW200943059A publication Critical patent/TW200943059A/zh
Application granted granted Critical
Publication of TWI368846B publication Critical patent/TWI368846B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4239—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with asynchronous protocol

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
TW097123016A 2008-04-09 2008-06-20 Method of wear leveling for non-volatile memory TWI368846B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/100,136 US20090259819A1 (en) 2008-04-09 2008-04-09 Method of wear leveling for non-volatile memory

Publications (2)

Publication Number Publication Date
TW200943059A TW200943059A (en) 2009-10-16
TWI368846B true TWI368846B (en) 2012-07-21

Family

ID=41164938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097123016A TWI368846B (en) 2008-04-09 2008-06-20 Method of wear leveling for non-volatile memory

Country Status (2)

Country Link
US (1) US20090259819A1 (zh)
TW (1) TWI368846B (zh)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100504814C (zh) * 2007-01-17 2009-06-24 忆正存储技术(深圳)有限公司 闪存的区块管理方法
US8176295B2 (en) 2009-04-20 2012-05-08 Imation Corp. Logical-to-physical address translation for a removable data storage device
US8065469B2 (en) * 2009-04-20 2011-11-22 Imation Corp. Static wear leveling
US8601202B1 (en) * 2009-08-26 2013-12-03 Micron Technology, Inc. Full chip wear leveling in memory device
US8539139B1 (en) * 2010-12-17 2013-09-17 Teradota Us, Inc. Managing device wearout using I/O metering
US20120203993A1 (en) * 2011-02-08 2012-08-09 SMART Storage Systems, Inc. Memory system with tiered queuing and method of operation thereof
US8909851B2 (en) 2011-02-08 2014-12-09 SMART Storage Systems, Inc. Storage control system with change logging mechanism and method of operation thereof
US8935466B2 (en) 2011-03-28 2015-01-13 SMART Storage Systems, Inc. Data storage system with non-volatile memory and method of operation thereof
US9098399B2 (en) 2011-08-31 2015-08-04 SMART Storage Systems, Inc. Electronic system with storage management mechanism and method of operation thereof
US9063844B2 (en) 2011-09-02 2015-06-23 SMART Storage Systems, Inc. Non-volatile memory management system with time measure mechanism and method of operation thereof
US9021231B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Storage control system with write amplification control mechanism and method of operation thereof
US9021319B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Non-volatile memory management system with load leveling and method of operation thereof
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
US8949689B2 (en) 2012-06-11 2015-02-03 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US8699175B1 (en) * 2012-07-20 2014-04-15 Western Digital Technologies, Inc. Disk drive mapping low frequency write addresses to circular buffer write zone
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
KR102067029B1 (ko) * 2012-12-13 2020-01-16 삼성전자주식회사 반도체 메모리 장치 및 메모리 시스템
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9470720B2 (en) 2013-03-08 2016-10-18 Sandisk Technologies Llc Test system with localized heating and method of manufacture thereof
US9043780B2 (en) 2013-03-27 2015-05-26 SMART Storage Systems, Inc. Electronic system with system modification control mechanism and method of operation thereof
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
US9313874B2 (en) 2013-06-19 2016-04-12 SMART Storage Systems, Inc. Electronic system with heat extraction and method of manufacture thereof
US9898056B2 (en) 2013-06-19 2018-02-20 Sandisk Technologies Llc Electronic assembly with thermal channel and method of manufacture thereof
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9431113B2 (en) 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
CN103645991B (zh) * 2013-11-22 2017-02-15 华为技术有限公司 数据处理方法及装置
CN104156317A (zh) * 2014-08-08 2014-11-19 浪潮(北京)电子信息产业有限公司 一种非易失性闪存的擦写管理方法及系统
US9129628B1 (en) 2014-10-23 2015-09-08 Western Digital Technologies, Inc. Data management for data storage device with different track density regions
WO2017058184A1 (en) * 2015-09-30 2017-04-06 Hewlett Packard Enterprise Development Lp Remapping operations
TWI571882B (zh) * 2016-02-19 2017-02-21 群聯電子股份有限公司 平均磨損方法、記憶體控制電路單元及記憶體儲存裝置
US10261876B2 (en) 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
US10430085B2 (en) 2016-11-08 2019-10-01 Micron Technology, Inc. Memory operations on data
CN110175385B (zh) * 2019-05-20 2021-01-15 山东大学 一种基于性能磨损均衡的非易失fpga布局优化方法和系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
CN100483552C (zh) * 2002-10-28 2009-04-29 桑迪士克股份有限公司 在非易失性存储系统中执行自动磨损平衡的方法
US6985992B1 (en) * 2002-10-28 2006-01-10 Sandisk Corporation Wear-leveling in non-volatile storage systems
US7224604B2 (en) * 2005-03-14 2007-05-29 Sandisk Il Ltd. Method of achieving wear leveling in flash memory using relative grades
US7853749B2 (en) * 2005-09-01 2010-12-14 Cypress Semiconductor Corporation Flash drive fast wear leveling

Also Published As

Publication number Publication date
US20090259819A1 (en) 2009-10-15
TW200943059A (en) 2009-10-16

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