TWI367861B - Method of synthesizing small-diameter carbon nanotubes with electron field emission properties - Google Patents

Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

Info

Publication number
TWI367861B
TWI367861B TW093140574A TW93140574A TWI367861B TW I367861 B TWI367861 B TW I367861B TW 093140574 A TW093140574 A TW 093140574A TW 93140574 A TW93140574 A TW 93140574A TW I367861 B TWI367861 B TW I367861B
Authority
TW
Taiwan
Prior art keywords
carbon nanotubes
field emission
emission properties
electron field
diameter carbon
Prior art date
Application number
TW093140574A
Other languages
English (en)
Other versions
TW200536779A (en
Inventor
Jie Liu
Chunsheng Du
Cheng Qian
Bo Gao
Qi Qiu
Otto Z Zhou
Original Assignee
Xintek Inc
Univ Duke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xintek Inc, Univ Duke filed Critical Xintek Inc
Publication of TW200536779A publication Critical patent/TW200536779A/zh
Application granted granted Critical
Publication of TWI367861B publication Critical patent/TWI367861B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/04—Nanotubes with a specific amount of walls
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/36—Diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Catalysts (AREA)
TW093140574A 2003-12-24 2004-12-24 Method of synthesizing small-diameter carbon nanotubes with electron field emission properties TWI367861B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53197803P 2003-12-24 2003-12-24
US11/012,341 US7618300B2 (en) 2003-12-24 2004-12-16 Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

Publications (2)

Publication Number Publication Date
TW200536779A TW200536779A (en) 2005-11-16
TWI367861B true TWI367861B (en) 2012-07-11

Family

ID=34752344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093140574A TWI367861B (en) 2003-12-24 2004-12-24 Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

Country Status (6)

Country Link
US (1) US7618300B2 (zh)
JP (1) JP2007533581A (zh)
KR (1) KR20070061473A (zh)
CN (1) CN101176181B (zh)
TW (1) TWI367861B (zh)
WO (1) WO2005065218A2 (zh)

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US20080260617A1 (en) * 2006-11-03 2008-10-23 Jie Liu FUNCTIONALIZED FEW-WALLED CARBON NANOTUBES (FWNTs) AND METHODS OF MAKING AND USING THE SAME
US7850874B2 (en) * 2007-09-20 2010-12-14 Xintek, Inc. Methods and devices for electrophoretic deposition of a uniform carbon nanotube composite film
KR100922399B1 (ko) * 2008-02-29 2009-10-19 고려대학교 산학협력단 전자방출원, 이를 적용한 전자장치 및 전자방출원의제조방법
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8466044B2 (en) * 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US20100108976A1 (en) * 2008-10-30 2010-05-06 Sandisk 3D Llc Electronic devices including carbon-based films, and methods of forming such devices
US8835892B2 (en) * 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8309438B2 (en) 2009-03-03 2012-11-13 Board Of Regents, The University Of Texas System Synthesizing graphene from metal-carbon solutions using ion implantation
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
KR101611410B1 (ko) * 2009-04-07 2016-04-11 삼성전자주식회사 그래핀의 제조 방법
US8753468B2 (en) * 2009-08-27 2014-06-17 The United States Of America, As Represented By The Secretary Of The Navy Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
SG10201500043YA (en) 2010-02-19 2015-03-30 Incubation Alliance Inc Carbon material and method for producing same
KR101091178B1 (ko) 2010-10-18 2011-12-09 한국전기연구원 그라펜을 이용한 전자방출원 및 그 제조방법
JP6387300B2 (ja) 2011-06-20 2018-09-05 矢崎総業株式会社 炭素の凝集アセンブリおよびその用途
WO2013066105A1 (ko) * 2011-11-04 2013-05-10 제일모직주식회사 이중벽 탄소나노튜브 및 그 제조방법
CN103779148A (zh) * 2012-10-23 2014-05-07 海洋王照明科技股份有限公司 一种场发射阴极及其制备方法
CN103545158B (zh) * 2013-10-25 2016-03-23 中国科学院深圳先进技术研究院 碳纳米管阴极及其制备方法
KR101645918B1 (ko) * 2016-02-16 2016-08-04 주식회사 엘지화학 금속 수용액, 담지 촉매 및 이들의 제조 방법
AU2018273789B2 (en) 2017-05-25 2022-07-21 Micro-X Limited Device for producing radio frequency modulated X-ray radiation
US11955306B2 (en) 2018-04-06 2024-04-09 Micro-X Limited Large scale stable field emitter for high current applications
EP3804472A4 (en) 2018-05-25 2022-03-23 Micro-X Limited DEVICE FOR APPLYING BEAM-FORMING SIGNAL PROCESSING TO RF MODULATED X-RAYS
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids

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Also Published As

Publication number Publication date
WO2005065218A2 (en) 2005-07-21
WO2005065218A3 (en) 2007-04-19
CN101176181A (zh) 2008-05-07
CN101176181B (zh) 2011-08-03
JP2007533581A (ja) 2007-11-22
KR20070061473A (ko) 2007-06-13
TW200536779A (en) 2005-11-16
US20060055303A1 (en) 2006-03-16
US7618300B2 (en) 2009-11-17

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