TWI367562B - Image sensor and manufacturing method thereof - Google Patents

Image sensor and manufacturing method thereof

Info

Publication number
TWI367562B
TWI367562B TW097134290A TW97134290A TWI367562B TW I367562 B TWI367562 B TW I367562B TW 097134290 A TW097134290 A TW 097134290A TW 97134290 A TW97134290 A TW 97134290A TW I367562 B TWI367562 B TW I367562B
Authority
TW
Taiwan
Prior art keywords
manufacturing
image sensor
sensor
image
Prior art date
Application number
TW097134290A
Other languages
English (en)
Other versions
TW200915558A (en
Inventor
Joon Hwang
Original Assignee
Dongbu Hitek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Hitek Co Ltd filed Critical Dongbu Hitek Co Ltd
Publication of TW200915558A publication Critical patent/TW200915558A/zh
Application granted granted Critical
Publication of TWI367562B publication Critical patent/TWI367562B/zh

Links

TW097134290A 2007-09-07 2008-09-05 Image sensor and manufacturing method thereof TWI367562B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070090750 2007-09-07
KR1020080058120A KR100882979B1 (ko) 2007-09-07 2008-06-20 이미지센서 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200915558A TW200915558A (en) 2009-04-01
TWI367562B true TWI367562B (en) 2012-07-01

Family

ID=40463084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134290A TWI367562B (en) 2007-09-07 2008-09-05 Image sensor and manufacturing method thereof

Country Status (3)

Country Link
KR (1) KR100882979B1 (zh)
CN (1) CN101383364B (zh)
TW (1) TWI367562B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822897B2 (en) * 2010-03-19 2014-09-02 Invisage Technologies, Inc. Image sensors employing sensitized semiconductor diodes
CN102509730B (zh) * 2011-12-30 2013-11-20 中国科学院上海高等研究院 图像传感器制备方法
FR3022425B1 (fr) * 2014-06-12 2017-09-01 New Imaging Tech Structure de circuit de lecture a injection de charge
CN104701334A (zh) * 2015-02-15 2015-06-10 格科微电子（上海）有限公司 采用深沟槽隔离的堆叠图像传感器的制作方法
US12027557B2 (en) 2018-10-16 2024-07-02 Sony Semiconductor Solutions Corporation Semiconductor element and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1719179B1 (en) * 2004-02-25 2018-10-03 Sony Semiconductor Solutions Corporation Photodetecting device
KR100577312B1 (ko) * 2004-07-05 2006-05-10 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
TW200915558A (en) 2009-04-01
CN101383364A (zh) 2009-03-11
CN101383364B (zh) 2012-03-21
KR100882979B1 (ko) 2009-02-12

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees