TWI365479B - Waferless automatic cleaning after barrier removal - Google Patents
Waferless automatic cleaning after barrier removalInfo
- Publication number
- TWI365479B TWI365479B TW094112311A TW94112311A TWI365479B TW I365479 B TWI365479 B TW I365479B TW 094112311 A TW094112311 A TW 094112311A TW 94112311 A TW94112311 A TW 94112311A TW I365479 B TWI365479 B TW I365479B
- Authority
- TW
- Taiwan
- Prior art keywords
- automatic cleaning
- barrier removal
- waferless automatic
- waferless
- barrier
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 238000004140 cleaning Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B5/00—Operations not covered by a single other subclass or by a single other group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M1/00—Apparatus for enzymology or microbiology
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N1/00—Microorganisms, e.g. protozoa; Compositions thereof; Processes of propagating, maintaining or preserving microorganisms or compositions thereof; Processes of preparing or isolating a composition containing a microorganism; Culture media therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2209/00—Aspects relating to disinfection, sterilisation or deodorisation of air
- A61L2209/10—Apparatus features
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Biotechnology (AREA)
- Organic Chemistry (AREA)
- Zoology (AREA)
- Wood Science & Technology (AREA)
- Genetics & Genomics (AREA)
- General Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Biomedical Technology (AREA)
- General Chemical & Material Sciences (AREA)
- Microbiology (AREA)
- General Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Tropical Medicine & Parasitology (AREA)
- Virology (AREA)
- Sustainable Development (AREA)
- Environmental & Geological Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/828,065 US7211518B2 (en) | 2004-04-19 | 2004-04-19 | Waferless automatic cleaning after barrier removal |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200539289A TW200539289A (en) | 2005-12-01 |
TWI365479B true TWI365479B (en) | 2012-06-01 |
Family
ID=35096831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094112311A TWI365479B (en) | 2004-04-19 | 2005-04-18 | Waferless automatic cleaning after barrier removal |
Country Status (4)
Country | Link |
---|---|
US (2) | US7211518B2 (zh) |
KR (1) | KR101144020B1 (zh) |
CN (1) | CN100472707C (zh) |
TW (1) | TWI365479B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7578945B2 (en) * | 2004-09-27 | 2009-08-25 | Lam Research Corporation | Method and apparatus for tuning a set of plasma processing steps |
US20070243714A1 (en) * | 2006-04-18 | 2007-10-18 | Applied Materials, Inc. | Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step |
US8283255B2 (en) * | 2007-05-24 | 2012-10-09 | Lam Research Corporation | In-situ photoresist strip during plasma etching of active hard mask |
JP4918453B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | ガス供給装置及び薄膜形成装置 |
CN102136410B (zh) * | 2010-01-27 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体工艺腔的清洁方法 |
CN103785646A (zh) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | 反应腔室清洗方法 |
CN105742203B (zh) * | 2014-12-10 | 2019-08-13 | 中微半导体设备(上海)股份有限公司 | 一种改变气体流动模式的装置及晶圆处理方法和设备 |
US20160172243A1 (en) * | 2014-12-11 | 2016-06-16 | Nxp B.V. | Wafer material removal |
JP7199279B2 (ja) * | 2019-03-26 | 2023-01-05 | 東京エレクトロン株式会社 | 基板処理装置及び載置台の除電方法 |
CN111118458B (zh) * | 2019-12-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 腔室清洁方法及装置 |
TWI757013B (zh) * | 2020-12-28 | 2022-03-01 | 友達光電股份有限公司 | 控制製程腔室清潔氣體用量的方法及製程處理系統 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6060397A (en) | 1995-07-14 | 2000-05-09 | Applied Materials, Inc. | Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus |
US6362110B1 (en) * | 2000-03-30 | 2002-03-26 | Lam Research Corporation | Enhanced resist strip in a dielectric etcher using downstream plasma |
US6852242B2 (en) * | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
TW567554B (en) * | 2001-08-08 | 2003-12-21 | Lam Res Corp | All dual damascene oxide etch process steps in one confined plasma chamber |
US7125792B2 (en) * | 2003-10-14 | 2006-10-24 | Infineon Technologies Ag | Dual damascene structure and method |
-
2004
- 2004-04-19 US US10/828,065 patent/US7211518B2/en not_active Expired - Fee Related
-
2005
- 2005-04-18 TW TW094112311A patent/TWI365479B/zh active
- 2005-04-18 CN CNB2005100762025A patent/CN100472707C/zh active Active
- 2005-04-19 KR KR1020050032519A patent/KR101144020B1/ko active IP Right Grant
-
2007
- 2007-02-07 US US11/672,129 patent/US20070128849A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7211518B2 (en) | 2007-05-01 |
US20050233590A1 (en) | 2005-10-20 |
TW200539289A (en) | 2005-12-01 |
CN1691276A (zh) | 2005-11-02 |
KR101144020B1 (ko) | 2012-05-09 |
CN100472707C (zh) | 2009-03-25 |
KR20060047238A (ko) | 2006-05-18 |
US20070128849A1 (en) | 2007-06-07 |
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