TWI364629B - Apparatus and method for photolithography - Google Patents
Apparatus and method for photolithography Download PDFInfo
- Publication number
- TWI364629B TWI364629B TW94129231A TW94129231A TWI364629B TW I364629 B TWI364629 B TW I364629B TW 94129231 A TW94129231 A TW 94129231A TW 94129231 A TW94129231 A TW 94129231A TW I364629 B TWI364629 B TW I364629B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- laser
- interference device
- lithography
- page
- Prior art date
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
1364629 101年.02月13日梭正替換苜 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明係關於雷射光精密加工裝置及其方法,尤指雷射 光微影製作裝置及其方法。 【先前技術】 [0002] 隨著半導體、精密光學產業的發展及奈米材料等高新技 術的出現,針對該等精密元件所採用的加工技術亦是曰 新月異。雷射光精密加工技術在工業製程中被愈來愈廣 泛應用。由於雷射光具高單色性、高相干性、高方向性 等特徵,因此使用雷射光對元件進行加工可以得到亞波 , Ί 長量級之結構。雷射微影術為一種雷射光加工技術,其 - 藉由光學干涉元件或者繞射元件獲得相干光束,該等相 干光束在工件上發生干涉或者繞射現象,從而在工件上 形成干涉條紋或者繞射圖樣。最後,對工件進行曝光加 工,即可得到奈米數量級尺寸的細部特徵結構。 [0003] 請參看第一圖,一習知雷射光微影裝置10包括一光源100 、一分光元件102、二反射元件104、106及一光照基底 108。光源100發出一初始光束10a,初始光束10a入射至 分光元件102。分光元件102具有分光功能,從而將初始 光束10a分為第一子光束10b和第二子光束10c。第一子 光束l〇b直接照射至光照基底108上;第二子光束10c依 次經反射元件104、106反射轉向後射至光照基底108上 。從而,第一子光東10b與第二子光束10c在光照基底 108上發生干涉,以形成光微影。 [0004] 第一子光束10b、第二子光束10c在光照基底108上所得 09412923^單編號 A〇101 第4頁/共29頁 1013052258-0 1364629 [0005] [0006] [0007] [0008] 10Ϊ年.02月13日修正_頁 到的干涉光微影條紋的強度/可表示為:Μ«(1) (1) 式中^ 、^之分別為第一子光束1〇b、第二子光束 單獨傳輸時在光照基底108處的光強度 :稱為^12 干涉項’其顯式表示為:〕木β^·2 部网:WSi^ (2) (2) 式中^;為第一子光束1〇b、第二子光束1〇(;相對於 光照基底108的夾角之差;g丨為位相差,表示第一子光 束10b、第二子光束i〇c在光照基底1〇8處的光波位相差 ’ 可以表示為: [0009]1364629 101. On the 13th of February, the company is replacing the sixth invention. The invention relates to a laser light precision processing device and a method thereof, and more particularly to a laser light micro-shadow making device. method. [Prior Art] [0002] With the development of semiconductors, precision optics, and high-tech technologies such as nanomaterials, the processing technology used for these precision components is also changing rapidly. Laser precision machining technology is becoming more and more widely used in industrial processes. Because of the high monochromaticity, high coherence, and high directivity of laser light, the use of laser light to process components can achieve sub-wavelengths and long-order structures. Laser lithography is a laser light processing technique in which a coherent light beam is obtained by an optical interference element or a diffraction element, which interferes or diffracts on the workpiece to form interference fringes or windings on the workpiece. Shoot the pattern. Finally, the workpiece is subjected to exposure processing to obtain a detailed feature of the nanometer order size. Referring to the first figure, a conventional laser lithography apparatus 10 includes a light source 100, a light splitting element 102, two reflective elements 104, 106, and a light substrate 108. The light source 100 emits an initial beam 10a, and the initial beam 10a is incident on the spectroscopic element 102. The spectroscopic element 102 has a splitting function to divide the initial beam 10a into a first sub-beam 10b and a second sub-beam 10c. The first sub-beam l〇b is directly incident on the illumination substrate 108; the second sub-beam 10c is reflected by the reflective elements 104, 106 and then directed onto the illumination substrate 108. Thereby, the first sub-light East 10b and the second sub-beam 10c interfere on the illumination substrate 108 to form a photo lithography. [0004] The first sub-beam 10b and the second sub-beam 10c are obtained on the illumination substrate 108. 09412923^Single number A〇101 Page 4/29 pages 1013052258-0 1364629 [0005] [0007] [0007] 10Ϊ年.02月13日修正_Page to the intensity of the interfering light lithography stripes can be expressed as: Μ«(1) (1) where ^, ^ are the first sub-beams 1〇b, second The intensity of light at the illumination substrate 108 when the sub-beams are transmitted separately: called the ^12 interference term', which is explicitly expressed as:] wood β^·2 part network: WSi^ (2) (2) where ^; The difference between the angle between a sub-beam 1〇b and the second sub-beam 1〇 (relative to the illumination substrate 108; g丨 is the phase difference, indicating that the first sub-beam 10b and the second sub-beam i〇c are on the illumination substrate 1〇 The difference in light wave position at 8 can be expressed as: [0009]
(3) [0010] (3)式中:_為光源100所發出光的波長,j表示第一 子光束10b、第二子光束i〇c在光照基底108處的光程差 ,:(:巧·θ...j"表示第一子光束l〇b、第二子光束l〇c的 光波初始相位差》 09412923^"^^^* A0101 第5頁/共29頁 1013052258-0 1364629 101年.oh月13日接正替换頁 [〇〇11]上述雷射光微影裝置1〇以分振幅方式將初始光束10a分為 第一、第二子光束l〇b、10c ’爾後使得該二子光束在光 照基底108上形成干涉條紋。 [0012] 結合參看第二圖,為該雷射微影裝置於光照基底1〇8上所 表示為 形成之干涉條紋之光強度分佈,其條紋間距 [0013] ΔΆ. (4) [0014] (4)式中(3) In the formula (3): _ is the wavelength of the light emitted by the light source 100, and j represents the optical path difference of the first sub-beam 10b and the second sub-beam i〇c at the illumination substrate 108: (:巧·θ...j" indicates the initial phase difference of the light wave of the first sub-beam l〇b and the second sub-beam l〇c” 09412923^"^^^* A0101 Page 5 of 29 1013052258-0 1364629 101. On March 13th, the replacement page [〇〇11] The above-mentioned laser lithography apparatus 1 分为 divides the initial beam 10a into first and second sub-beams l〇b, 10c' in a minute-amplitude manner so that the The two sub-beams form interference fringes on the illumination substrate 108. [0012] Referring to the second figure, the light intensity distribution of the interference fringes formed by the laser lithography apparatus on the illumination substrate 1 〇 8 is shown as a stripe pitch [ 0013] ΔΆ. (4) [0014] (4)
為光東的波長 $為干涉會聚角,表示 第—子光束10b、第二子光束l〇c相對於光照基底1〇8的 張角。 [0015]該干涉條紋之光強度表示為: [0016]The wavelength of light east is the interference convergence angle, indicating the opening angle of the first sub-beam 10b and the second sub-beam l〇c with respect to the illumination substrate 1〇8. [0015] The light intensity of the interference fringes is expressed as: [0016]
COS 2 (5) [〇〇17] (5)式中.):表示第一子光束、第二子光束i〇c在光 £0, 照基底108上的相對光程差為零處的干涉條紋之光強度, ^表示第一子光束l〇b'第二子光束l〇c在光照基底 108上某一位置尤處的相位差的丨/2。 [0018]由(5)式可以看到’干涉條紋之光強度分佈為一余弦函數 之平方,故各條干涉條紋明暗基本相同。 094129231^^^ A〇101 第 6 頁 / 共 29 頁 1013052258-0 1364629 101年02月13日按正.替Θ頁 [0019] 僅由(5)式,光強度 之最大值纟· 可表示為: I讹ώΐ [0020] 7; (6) max 一 ϋ [0021] 光強度/之最小值./· 可表示為COS 2 (5) [〇〇17] (5) where:): indicates the interference of the first sub-beam and the second sub-beam i〇c at the light of 0, and the relative optical path difference on the substrate 108 is zero. The light intensity of the stripe, ^ represents the 丨/2 of the phase difference of the first sub-beam l〇b' the second sub-beam l〇c at a certain position on the illumination substrate 108. [0018] It can be seen from equation (5) that the light intensity distribution of the interference fringes is the square of a cosine function, so that the interference fringes of the respective interference stripes are substantially the same. 094129231^^^ A〇101 Page 6 of 29 1013052258-0 1364629 On February 13, 101, press the page. [0019] Only by (5), the maximum value of light intensity 纟· can be expressed as : I讹ώΐ [0020] 7; (6) max ϋ [0021] The light intensity / the minimum value. / · can be expressed as
^ WZK^ WZK
[0022] · :ι· . 一 0 (7) [0023] 然,實際產生干涉過程中,光束亦會同時產生繞射之現 象,以致明條紋之光強度極大值 καχ 小於..r 、 K. 丄 而暗 條紋之光強度極小值_f·. 大於零,由此得干涉條紋之 光強度分佈明暗對比度不高,在光微影製作過程中不能 形成較為尖利的細節特徵。 【發明内容】 [0024] 有鑑於此,有必要提供一種雷射光微影之製作裝置,其 可形成明暗相間之精細雷射光微影。 [0025] 此外,還有必要提供一種雷射光微影之製作方法,使用 該方法可獲得明暗相間之精細雷射光微影。 [0026] —雷射光微影裝置,包括一光源、一光學干涉裝置、一 光學會聚裝置、一光照基底。光源發出一光束,光學干 涉裝置將該光束分成複數相干光束並發生干涉形成干涉 光束,光學會聚裝置將干涉光束會聚,光照基底接收該 會聚光束並記錄下會聚光束投射於光照基底上所形成之 094129231^單編號 A〇101 第7.頁./共29頁 1013052258-0 1364629 101年.02月13'日核正替換頁 圖樣特徵,其中,該光學干涉裝置包括第一透光元件及 一第二透光元件,該光束進入該光學干涉裝置後,通過 第一透光元件射至第二透光元件,其中至少部份光束被 第二透光元件反射並在第一、第二透光元件之間來回反 射,形成相干光束。 [0027] 一種雷射光微影製作方法,包括如下步驟: [0028] 藉由一光源產生一光束; [0029] 提供一光學干涉裝置,該光學干涉裝置包括第一透光元 件及一第二透光元件,該光束進入該光學干涉裝置後, 通過第一透光元件射至第二透光元件,其中至少部份光 束被第二透光元件反射並在第一、第二透光元件之間來 回反射,形成相干光束; [0030] 藉由該光學干涉裝置將上述光束分成複數相干光束; [0031] 使上述相干光束相互間發生干涉以形成干涉光束; [0032] 提供一光束會聚裝置; [0033] 通過該光束會聚裝置將上述干涉光束會聚,形成會聚光 束; [0034] 提供一光照基底以接收該會聚光束; [0035] 通過該光照基底記錄下會聚光束投射於光照基底上所形 成之圖樣訊息。 [0036] 與習知技術相比,本發明雷射光微影之製作裝置及其方 法提供一種光學干涉裝置,其能夠將入射光分成複數相 094129231^單編號 A〇101 第8頁/共29頁 1013052258-0 1^04629 .y x 10Ϊ年.02月13日梭正 干光束並發生相干干涉,最终於光照基底上形成雷射光 微影。 【實施方式】 [0037] 5月參看第三圖,其揭示本發明雷射微影裝置及其方法之 一較佳實施例。一雷射光微影裝置2〇沿光路方向依次設 有雷射光源200、一準直透鏡2〇2、一狹缝干涉裝置 2〇4、一聚焦透鏡206及一光照基底2〇8,該等元件之光 轴處於同一直線上。 [0038] 雷射光源200可發射出一雷射光2〇a,雷射光2〇a具高單 色性、高相干性之特點,其頻譜寬度、波譜寬度 極小。該高相干性可保證雷射光2〇a經過其他光學 元件的變換後仍能夠保持頻率之穩定。從而,此等高單 色性、高相干性為產生相干干涉提供了很好的條件。 [0039] 狹縫干涉裝置204由多個相互間隔設置的透光狹縫2〇4a與 擋光部份204b組成’並且透光狹縫2〇4a與擋光部份204b 等間距設置。透光狹縫204a之狹縫寬度為a,擋光部份 204b寬度為b (清參看第四圖)。透光狹縫2〇4a允許入 射至其上的光束無阻攔地通過,擋光部份2〇4b則完全阻 擋入射至其上的光束。從而,狹縫干涉裝置2〇4可將一入 射光束分割成為一系列次光束。由於此一系列次光束2〇e 係由同一光束分割而成,因此具有相同之光頻g 、波長 -jj ,滿足相干光之要件。 [0040] 094129231^^^^ 光照基底208具有感光之特性,其可記錄並保留入射至其 A0101 第9頁/共29頁 1013052258-0 1364629 101年0_2月13日修正替换頁 上的光束形成之明暗變化特徵,形成雷射微影。 [0041] 雷射光微影裝置20工作時,雷射光源200發出一雷射光束 20a,雷射光束20a經準直透鏡202準直成為平行光束20c ,並入射至狹縫干涉裝置204。由於狹縫干涉裝置204具 有分光功能,從而將平行光束20c分成若干相干次光束 20e。相干次光束20e相互間發生干涉,爾後經由聚焦透 鏡206會聚形成干涉光束20f。干涉光束20f照射至光照 基底208上,並在其上形成干涉微影圖樣。 [0042] 結合參看第四圖,相鄰兩狹縫所透射之光束在光照基底 208上所形成之光程差表示為: [0043] :A=fa^b) sine (8) [0044] (8)式中,$表示透光狹縫204a的寬度,^^表示相間 於透光狹縫204a之間的擋光部份204b的寬度,表示 相鄰兩狹縫形成干涉條紋時對應的方向角。 [0045] 透過相鄰狹缝之光束照射於光照基底208上之光波之相位 差表示為: (9) [0046] '2τι 2ττ d = —A = —(a^b)-sin9 λ λ ' [0047] (9)式中* j為光波之波長* g 涉條紋時對應的方向角。 為相鄰兩狹縫形成干 09412923产單編號 A〇101 第10頁/共29頁 1013052258-0 1364629 * tt · 101年02月13日核正替換頁 [0048] 由傅里葉光學理論,狹縫數為N的狹縫干涉裝置204所形 成之干涉光束20f在光照基底208上所形成之光波復函數 表7F為.[0022] · : ι· . A 0 (7) [0023] However, in the actual interference process, the beam will also produce diffraction at the same time, so that the light intensity maximum value κα 明 of the bright stripe is less than ..r, K. The light intensity of the dark stripes is extremely small _f·. Greater than zero, the light intensity distribution of the interference fringes is not high, and the contrast is not high, and the sharp detail features cannot be formed in the process of photolithography. SUMMARY OF THE INVENTION [0024] In view of the above, it is necessary to provide a laser light lithography fabrication apparatus that can form fine laser light lithography between light and dark. [0025] In addition, it is also necessary to provide a method of fabricating laser light lithography, which can be used to obtain fine laser light lithography between light and dark. A laser light lithography apparatus comprising a light source, an optical interference device, an optical convergence device, and a light substrate. The light source emits a light beam, the optical interference device divides the light beam into a plurality of coherent light beams and interferes to form an interference beam, the optical convergence device converges the interference beam, the illumination substrate receives the concentrated beam, and records the convergence of the concentrated beam onto the illumination substrate. 094129231^单单A〇101 Page 7./29 pages 1013052258-0 1364629 101. February 13' day nuclear replacement page pattern feature, wherein the optical interference device comprises a first light transmitting element and a first a light-transmitting element, the light beam entering the optical interference device, passing through the first light-transmitting element to the second light-transmitting element, wherein at least part of the light beam is reflected by the second light-transmitting element and is in the first and second light-transmitting elements Reflected back and forth to form a coherent beam. [0027] A method for fabricating laser light lithography, comprising the steps of: [0028] generating a light beam by a light source; [0029] providing an optical interference device, the optical interference device comprising a first light transmissive element and a second transparent a light element, after entering the optical interference device, is incident on the second light transmissive element through the first light transmissive element, wherein at least part of the light beam is reflected by the second light transmissive element and between the first and second light transmissive elements Reflecting back and forth to form a coherent light beam; [0030] dividing the beam into a plurality of coherent beams by the optical interference device; [0031] causing the coherent beams to interfere with each other to form an interference beam; [0032] providing a beam convergence device; 0033] concentrating the interference beam by the beam convergence device to form a concentrated beam; [0034] providing a light substrate to receive the concentrated beam; [0035] recording, by the illumination substrate, a pattern formed by the concentrated beam projected on the illumination substrate message. Compared with the prior art, the apparatus for producing laser lithography of the present invention and the method thereof provide an optical interference device capable of dividing incident light into a plurality of phases 094129231^single number A〇101 page 8/total 29 pages 1013052258-0 1^04629 .yx 10 Ϊ. On February 13th, the shuttle is drying the beam and coherent interference occurs, and finally a laser lithography is formed on the illumination substrate. [Embodiment] [0037] Referring to the third drawing in May, a preferred embodiment of the laser lithography apparatus and method thereof of the present invention is disclosed. a laser light lithography device 2 is provided with a laser light source 200, a collimating lens 2〇2, a slit interference device 2〇4, a focusing lens 206 and a light substrate 2〇8 in this order along the optical path. The optical axes of the components are on the same line. [0038] The laser light source 200 can emit a laser light 2〇a, and the laser light 2〇a has the characteristics of high chromaticity and high coherence, and its spectral width and spectral width are extremely small. This high coherence ensures that the laser light 2〇a remains stable after being converted by other optical components. Thus, such high chromaticity and high coherence provide excellent conditions for generating coherent interference. The slit interference device 204 is composed of a plurality of light-transmissive slits 2〇4a and a light-blocking portion 204b which are spaced apart from each other and the light-transmitting slits 2〇4a and the light-blocking portions 204b are equally spaced. The slit width of the light-transmitting slit 204a is a, and the width of the light-blocking portion 204b is b (see the fourth figure). The light-transmitting slits 2〇4a allow the light beam incident thereon to pass unimpeded, and the light-blocking portions 2〇4b completely block the light beam incident thereon. Thus, the slit interference device 2〇4 can divide an incident beam into a series of sub-beams. Since the series of sub-beams 2〇e are divided by the same beam, they have the same optical frequency g and wavelength -jj, which satisfy the requirements of coherent light. [0040] 094129231^^^^ The illumination substrate 208 has a photosensitive property, which can record and retain the beam formed on the correction replacement page of the A0101 page 9/29 page 1013052258-0 1364629 101. Light and dark variations, forming a laser lithography. [0041] When the laser lithography apparatus 20 is in operation, the laser light source 200 emits a laser beam 20a which is collimated by the collimator lens 202 into a parallel beam 20c and incident on the slit interference means 204. Since the slit interference means 204 has a splitting function, the parallel beam 20c is divided into a plurality of coherent sub-beams 20e. The coherent sub-beams 20e interfere with each other and then converge via the focusing lens 206 to form an interference beam 20f. The interference beam 20f is irradiated onto the illumination substrate 208 and forms an interference lithography pattern thereon. [0042] Referring to the fourth figure, the optical path difference formed by the light beams transmitted by the adjacent two slits on the illumination substrate 208 is expressed as: [0043] : A = fa ^ b) sine (8) [0044] ( In the formula 8), $ denotes the width of the light-transmitting slit 204a, and ^^ denotes the width of the light-blocking portion 204b between the light-transmitting slits 204a, which indicates the corresponding direction angle when the adjacent slits form interference fringes. . [0045] The phase difference of the light waves that are incident on the illumination substrate 208 by the light beams passing through the adjacent slits is expressed as: (9) '2τι 2ττ d = —A = —(a^b)-sin9 λ λ ' [ 0047] In the formula (9), * j is the wavelength of the light wave * g is the corresponding direction angle when the stripe is involved. For the adjacent two slits, the dry form is 09412923. The order number is A101. Page 10/29 pages 1013052258-0 1364629 * tt · February 13, 101 nuclear replacement page [0048] by Fourier optical theory, narrow The light wave complex function table 7F formed by the interference beam 20f formed by the slit interference device 204 having a slit number N on the illumination substrate 208 is
[0049] sm Ν· αχ. n(a+b)x0 smc\ ?ζ sin π·(α+Β)·χ0 Άζ (10) :為虛數單位 [0050] 其中,&為透光狹縫204a的狹縫寬度 之為狹縫干涉裝置204與光照基底208之間的距離 為干涉條紋相對於光照基底中央明條紋的距離 為與方向角有關的傾斜因子,表示為: [0051] when θ = 0. 〇 when: (11) [0052] 由(10)式可得透光狹縫數為N的狹縫干涉裝置204所形成 的干涉光束20f在光照基底208上所形成之光強度分佈函 數表.,其可表示為: 09412923产單編號 A〇101 第11頁/共29頁 1013052258-0 1364629 [0053] 101年0‘2月13’日核正替換頁 ,2· [U(k)J =.l0 sine 2 axt sm Νδ Ύ 2 λζ • δ sin —\ 2 (12) [0054] 該等干涉光束20f除了發生相干干涉外,還發生繞射,該 繞射現象會對最終形成於光照基底208上之干涉條紋之光 強度分佈產生影響,(12)式中 Λ表示該 sine 2 ?\z 等相干光束在發生繞射時對相干干涉圖樣所產生之擾動 因子,稱為繞射因子。 [0055] ,由(12)式可得狹縫數為N的狹縫干涉裝置204在光照基底 208上形成的干涉條紋之光強度分佈函數,其可 表示為: [0056] [0057] / 一2(13) 結合參看第五圖,其為N = 5時,干涉條紋之光強分佈圖樣 ,圖中,在兩相鄰之明條紋之間有(N-1)條暗條紋構成明 條紋的背景。各條明條紋所對應之入射光束的張角 sin ΝύΊΓ. sm δ Ί 09412923产單编號 Α〇101 第12頁/共29頁 1013052258-0 1364629 .-- 101年.02月13日修正替換頁 表不為· [0058] δΘν = __N(a+b)cosdK. (13) [0059] 由(14)式可見,狹缝干涉裝置204之透光狹縫數N越大, 則明條紋之張角;^ 越小,即表示干涉條紋越細銳。從 υΝ 而,藉由設置合適的透光狹缝數Ν,即可獲得具尖利細微 特徵之光微影。 [0060] 請參看第六圖,其揭示本發明雷射光微影裝置及其方法 之另一較佳實施例。一雷射微影裝置30沿光路方向依次 設有一雷射光源310、一準直透鏡320、一光束干涉裝置 330 —聚焦透鏡340以及一光照基底350,並且該等元件 之光軸處於同一直線上。 [0061] 雷射光源310可發出一雷射光30a,雷射光30a具有高單 色性、高相干性之特性,其頻譜寬度、波譜寬度 極小。該高相干性可保證雷射光30a經過其他光學 元件的變換後仍能夠保持頻譜寬度、波譜寬度 維持於極小之範圍。從而,此等高單色性、高相干 性為產生相干干涉提供了很好的條件。 [0062] 光束干涉裝置330包括第一、第二干涉組件331、332。 結合參看第七圖,第一干涉組件331具有入射面331a、出 09412923^單編號 A〇101 第13頁/共29 1 1013052258-0 1364629 101年0_2月IB日梭正替換頁 射面331b ;第二干涉組件332具有入射面332a、出射面 332b。出射面331b與入射面332a為光學半透半反面,且 相互平行。射至干涉組件331的光束經入射面331a折射後 由出射面331b出射;爾後在兩半透半反面331b、332a之 間來回反射,形成一系列次光束。此一系列次光束係由 一束光分割而成,其光頻、光波長j均相同,從而 構成相干光。此一系列次光束發生相干干涉後,通過出 射面332b出射形成相干光束。 [0063] [0064] 光照基底350具有感光之特性,其可記錄並保留入射至其 上的光束形成之明暗變化特徵,形成雷射微影。 雷射光微影裝置30工作時,雷射光源310發出一雷射光束 30a,雷射光束30a經準直透鏡320準直後形成平行光束 30b,並入射至光束干涉裝置330。由於光束在第一干涉 組件331和第二干涉組件332之間的來回反射,平行光束 30b被分成一系列相干的次光束30d。次光束30d相互間 發生干涉,爾後經聚焦透鏡340會聚形成干涉光束30e。 干涉光束30e入射至光照基底350上,並且在其上干涉微 影圖樣。 [0065] 因此,光束30d在出射面331b、入射面332a之間形成的 干涉相位差表示為: [0066] 2ττg=-—-(2nd) λ (15) [0067] (15)式中2為入射光之波長 ^2為出射面331b、入 094129231^單編號 A〇101 第14頁/共29頁 1013052258-0 [0068] [0068] 1364629 ε · 射面332a之間的透光介質之折射率,^為出射— 、入射面332a之間的正距離。 經過聚焦透鏡340聚焦後形成於光照基底35〇上的明暗條 紋的光強度分佈可表示為: [0069] 2 (16) l-2r2 cos δ+r [0070] (16)式中表示入射光3〇3之光強度,广表示半透半 反面331b、332a對光束之振幅反射率,谷:為(15)式所 示之相位差。 [0071] 請參看第八圖,衡量條紋精密度的“條紋半寬度” 定 義為條紋光強度峰值兩側之條紋光強度下降至岭值之1 / 2 處之兩點之間距離。由(16)式,當j一 / 時,可 得: [0072][0049] sm Ν·αχ. n(a+b)x0 smc\ ?ζ sin π·(α+Β)·χ0 Άζ (10): is an imaginary unit [0050] where & is a light-transmissive slit 204a The slit width is the distance between the slit interference device 204 and the illumination substrate 208. The distance between the interference fringes and the central bright stripe of the illumination substrate is a tilt factor related to the direction angle, which is expressed as: [0051] when θ = 0 〇when: (11) [0052] The light intensity distribution function table formed by the interference beam 20f formed by the slit interference device 204 having the number of transmission slits N on the illumination substrate 208 is obtained by the equation (10). , which can be expressed as: 09412923 production order number A〇101 page 11 / total 29 page 1013052258-0 1364629 [0053] 101 years 0' February 13' day nuclear replacement page, 2 · [U(k)J = .l0 sine 2 axt sm Νδ Ύ 2 λζ • δ sin —\ 2 (12) [0054] In addition to coherent interference, the interference beam 20f also undergoes diffraction, which will eventually form on the illumination substrate 208. The intensity distribution of the interference fringes on the upper surface has an influence. (12) where Λ denotes the disturbance of the coherent interference pattern when the coherent light beam such as sine 2 ?\z is diffracted. Factor, called diffraction factor. [0055] The light intensity distribution function of the interference fringes formed by the slit interference device 204 having the slit number N on the illumination substrate 208 can be expressed by the formula (12), which can be expressed as: [0056] 2(13) Referring to the fifth figure, when N = 5, the intensity distribution pattern of the interference fringes, in the figure, there are (N-1) dark stripes between the two adjacent bright stripes to form bright stripes. background. The opening angle of the incident beam corresponding to each bright stripe sin ΝύΊΓ. sm δ Ί 09412923 One-Order No. Α〇101 Page 12/Total 29 Page 1013052258-0 1364629 .-- 101 years. February 13th revised replacement page [0058] δΘν = __N(a+b)cosdK. (13) [0059] It can be seen from the formula (14) that the larger the number N of the light-transmissive slits of the slit interference device 204, the opening angle of the bright stripe; The smaller, the finer the interference fringes. From υΝ, by setting the appropriate number of light-transmissive slits, light lithography with sharp and fine features can be obtained. Please refer to a sixth diagram which discloses another preferred embodiment of the laser light lithography apparatus of the present invention and a method thereof. A laser lithography device 30 is sequentially provided with a laser light source 310, a collimating lens 320, a beam interference device 330, a focusing lens 340, and a illuminating substrate 350 along the optical path, and the optical axes of the components are on the same line. . [0061] The laser light source 310 emits a laser light 30a having high chromaticity and high coherence, and its spectral width and spectral width are extremely small. This high coherence ensures that the spectral width and spectral width of the laser light 30a are maintained within a very small range after being transformed by other optical components. Thus, such high monochromaticity and high coherence provide excellent conditions for generating coherent interference. [0062] The beam interference device 330 includes first and second interference components 331, 332. Referring to the seventh figure, the first interference component 331 has an incident surface 331a, a 09412923^ single number A 〇 101 page 13 / a total of 29 1 1013052258-0 1364629 101 years 0-month IB day shuttle is replacing the page surface 331b; The two interference components 332 have an incident surface 332a and an exit surface 332b. The exit surface 331b and the incident surface 332a are optical transflective surfaces and are parallel to each other. The light beam incident on the interference element 331 is refracted by the incident surface 331a and then emitted by the exit surface 331b; and then reflected back and forth between the two half-transparent surfaces 331b, 332a to form a series of sub-beams. The series of sub-beams are divided by a beam of light, and the optical frequency and the wavelength j of the light are the same, thereby forming coherent light. After a series of sub-beams have coherent interference, they exit through the exit surface 332b to form a coherent light beam. [0064] The illumination substrate 350 has a photosensitive property that records and preserves the light and dark variation characteristics of the light beam incident thereon to form a laser lithography. When the laser lithography apparatus 30 is in operation, the laser light source 310 emits a laser beam 30a which is collimated by the collimating lens 320 to form a parallel beam 30b and is incident on the beam interference means 330. Due to the back and forth reflection of the beam between the first interference component 331 and the second interference component 332, the parallel beam 30b is divided into a series of coherent sub-beams 30d. The sub-beams 30d interfere with each other and are then concentrated by the focusing lens 340 to form an interference beam 30e. The interference beam 30e is incident on the illumination substrate 350 and interferes with the lithography pattern thereon. Therefore, the interference phase difference formed between the light-emitting surface 331b and the incident surface 332a of the light beam 30d is expressed as: [0066] 2ττg=---(2nd) λ (15) [00) where 2 is The wavelength of the incident light ^2 is the exit surface 331b, the input 094129231^the single number A〇101 page 14/29 pages 1013052258-0 [0068] 1364629 ε · The refractive index of the transparent medium between the planes 332a , ^ is the outgoing distance - the positive distance between the incident faces 332a. The light intensity distribution of the light and dark stripes formed on the illumination substrate 35A after being focused by the focusing lens 340 can be expressed as: [0069] 2 (16) l-2r2 cos δ+r [0070] (16) where the incident light 3 is represented The light intensity of 〇3 broadly indicates the amplitude reflectance of the light beam of the transflective surfaces 331b and 332a, and the valley: the phase difference shown by the formula (15). [0071] Referring to the eighth figure, the "strip half width" for measuring the precision of the stripe is defined as the distance between the two points at which the stripe light intensity on both sides of the stripe light intensity peak drops to 1 / 2 of the ridge value. From (16), when j is /, you can get: [0072]
[0073] (17)式中’及;表示半透半反面331b、332a對光束之光 強度反射率,定義式表示為·:含。 [0074] 由(17)式見,$;之值越大,則之值越小,所反映 094129231^^^ Α0101 第15頁/共29頁 1013052258-0 1364629 101年0’2月13日梭正替換頁 為條紋之半寬度越小,條紋越精細。當$ = 2 ,則, 〇干涉條紋之銳度最高。從而,藉由設置合適的 光強度反射率$ ,即可獲得對比度、精密度極高之微 影。 [0075] 綜上所述,本發明符合發明專利要件,爰依法提出專利 申請。惟,以上所述者僅為本發明之較佳實施例,舉凡 熟悉本案技藝之人士,在援依本案創作精神所作之等效 修飾或變化,皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 [0076] 第一圖係一習知雷射光微影裝置之結構示意圖; [0077] 第二圖係習知雷射光微影裝置所形成之雷射光微影光強 度分佈示意圖; [0078] 第三圖係本發明之雷射光微影裝置之一較佳實施例之結 構不意圖, [0079] 第四圖係第三圖之雷射光微影裝置之狹縫干涉元件示意 圖; [0080] 第五圖係第三圖之雷射光微影裝置之光照基底所得之一 干涉條紋強度分佈示意圖; [0081] 第六圖係本發明之雷射光微影裝置之另一較佳實施例之 結構不意圖; [0082] 第七圖係第六圖之雷射光微影裝置之光束干涉裝置示意 圖; 〇94129231^單编號删1 第16頁/共29頁 1013052258-0 1364629 • ‘, , 101年.02月13日核正替换頁 [0083] 第八圖係第六圖之雷射光微影裝置之光照基底所得之一 干涉條紋半寬度示意圖。 [0084] 【主要元件符號說明】 光源:100、200、310 [0085] 分光元件:102 [0086] 反射元件:104、106 [0087] 光照基底:108、208、350 [0088] 光學準直裝置:202、320 [0089] 干涉裝置:204、330 [0090] 透光狹縫:204a [0091] 擋光部份:204b [0092] 第一干涉組件:331 [0093] 第二干涉組件:332 [0094] 入射面:331a、332a [0095] 出射面:331b、332b [0096] 光學聚焦裝置:206、340 [0097] 光源發出光束:10a、20a、30a [0098] 第一子光束:l〇b [0099] 第二子光束:10c [0100] 準直光束:20c、30b 0941292#單編號 A0101 1013052258-0 第17頁/共29頁 1364629 101年.02月I3·日核正替換頁 [0101] [0102] [0103] 相干光束:20e、30c 干涉光束:20f、30d 聚焦光束:30e 09412923产單编號 A〇101 第18頁/共29頁 1013052258-0(17) where 'and' indicates the light intensity reflectance of the light transmissive surfaces 331b and 332a to the light beam, and the definition is expressed as::. [0074] See (17), the larger the value of $; the smaller the value, the reflected 094129231^^^ Α0101 page 15 / 29 pages 1013052258-0 1364629 101 years 0' February 13 shuttle The positive replacement page is the half width of the stripe, and the finer the stripe. When $ = 2, the sharpness of the interference fringe is highest. Thus, by setting an appropriate light intensity reflectance of $, a contrast-precision, extremely high-precision lithography can be obtained. [0075] In summary, the present invention complies with the requirements of the invention patent, and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and those skilled in the art will be able to include the equivalent modifications or variations in the spirit of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0076] The first figure is a schematic diagram of a conventional laser light lithography apparatus; [0077] The second figure is a schematic diagram of the intensity distribution of laser light lithography formed by a conventional laser lithography apparatus [0078] The third diagram is a schematic diagram of a preferred embodiment of the laser lithography apparatus of the present invention, and the fourth diagram is a schematic diagram of a slit interference element of the laser lithography apparatus of the third diagram; [0080] FIG. 5 is a schematic diagram showing an interference fringe intensity distribution obtained by the illumination substrate of the laser photolithography device of the third embodiment; [0081] FIG. 6 is another preferred embodiment of the laser photolithography device of the present invention FIG. 7 is a schematic diagram of a beam interference device of a laser lithography apparatus of FIG. 6; 〇94129231^单编号除1第16页/29 pages 1013052258-0 1364629 • ', , 101. February 13th Nuclear Replacement Page [0083] The eighth figure is a half-width schematic diagram of one of the interference fringes obtained from the illumination substrate of the laser light lithography apparatus of the sixth figure. [Description of main component symbols] Light source: 100, 200, 310 [0085] Spectroscopic element: 102 [0086] Reflecting element: 104, 106 [0087] Illuminating substrate: 108, 208, 350 [0088] Optical collimating device : 202, 320 [0089] Interference device: 204, 330 [0090] Light-transmissive slit: 204a [0091] Light-blocking portion: 204b [0092] First interference component: 331 [0093] Second interference component: 332 [ 0094] Incident plane: 331a, 332a [0095] Exit surface: 331b, 332b [0096] Optical focusing device: 206, 340 [0097] Light source emits light beam: 10a, 20a, 30a [0098] First sub-beam: l〇b [0099] Second sub-beam: 10c [0100] Collimated beam: 20c, 30b 0941292# single number A0101 1013052258-0 page 17 / 29 pages 1364629 101. February I3 · Japanese nuclear replacement page [0101] [0103] Coherent light beam: 20e, 30c Interference beam: 20f, 30d Focused beam: 30e 09412923 Production order number A〇101 Page 18/29 pages 1013052258-0
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94129231A TWI364629B (en) | 2005-08-26 | 2005-08-26 | Apparatus and method for photolithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94129231A TWI364629B (en) | 2005-08-26 | 2005-08-26 | Apparatus and method for photolithography |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200708902A TW200708902A (en) | 2007-03-01 |
TWI364629B true TWI364629B (en) | 2012-05-21 |
Family
ID=46750667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94129231A TWI364629B (en) | 2005-08-26 | 2005-08-26 | Apparatus and method for photolithography |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI364629B (en) |
-
2005
- 2005-08-26 TW TW94129231A patent/TWI364629B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200708902A (en) | 2007-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI298824B (en) | Lithographic apparatus, device manufacturing method, and device manufactured thereby | |
JP6044315B2 (en) | Displacement measuring method and displacement measuring apparatus | |
TWI635373B (en) | Apparatus and method for measuring stacking error | |
JP5496846B2 (en) | Interferometric lithography apparatus | |
JP4859311B2 (en) | Laser illumination optical system, exposure apparatus using the optical system, laser processing machine, and projection apparatus | |
US8169703B1 (en) | Monolithic arrays of diffraction gratings | |
KR101743810B1 (en) | Light irradiation apparatus and drawing apparatus | |
US7995212B2 (en) | Optical displacement measuring device | |
US7170588B2 (en) | Reduction Smith-Talbot interferometer prism for micropatterning | |
TW201805741A (en) | Mark detection apparatus, mark detection method, measurement apparatus, exposure apparatus, exposure method and method of manufacturing device | |
US10042173B2 (en) | Laser interference lithography system with flat-top intensity profile | |
JPH05210006A (en) | Method and apparatus for generating multiple light beam of multiple wave- length interferometer | |
JP2012009872A (en) | Illuminating optical system, exposure equipment, and projector | |
US9454132B2 (en) | Integrated hologram optical device | |
JP2019212672A (en) | Detector, imprint device, flattening apparatus, detection method and article manufacturing method | |
JP5948558B2 (en) | Spectrometer | |
CN101295553B (en) | X ray holography diffraction grating beam divider | |
US5745221A (en) | Exposure equipment | |
TWI364629B (en) | Apparatus and method for photolithography | |
JP6435131B2 (en) | Light irradiation device, drawing device, and phase difference generator | |
JP2011106842A (en) | Diffraction grating spectrometer | |
US6633385B2 (en) | System and method for recording interference fringes in a photosensitive medium | |
Naulleau et al. | Electro-optical system for scanning microscopy of extreme ultraviolet masks with a high harmonic generation source | |
JP6345963B2 (en) | Light irradiation apparatus and drawing apparatus | |
US6990272B2 (en) | Apparatus for generating an optical interference pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |