CN214042006U - Photoetching alignment system based on dual-wavelength photon sieve and dual light sources - Google Patents
Photoetching alignment system based on dual-wavelength photon sieve and dual light sources Download PDFInfo
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- CN214042006U CN214042006U CN202120399493.6U CN202120399493U CN214042006U CN 214042006 U CN214042006 U CN 214042006U CN 202120399493 U CN202120399493 U CN 202120399493U CN 214042006 U CN214042006 U CN 214042006U
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- 230000009977 dual effect Effects 0.000 title claims abstract description 17
- 238000001259 photo etching Methods 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001459 lithography Methods 0.000 claims abstract description 11
- 238000000926 separation method Methods 0.000 claims 2
- 238000003384 imaging method Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The utility model relates to the technical field of lithography, in particular to a lithography alignment system based on a dual-wavelength photon sieve and a dual light source, which comprises a second reflecting mirror, a third spectroscope, a first spectroscope, a second spectroscope, a photon sieve, a mask and a silicon wafer which are coaxially arranged in sequence; an alignment light source and a first collimating lens are coaxially arranged on one side of the first spectroscope in sequence, and the first collimating lens is adjacent to the first spectroscope; an exposure light source and a second collimating lens are coaxially arranged on one side of the second spectroscope in sequence, and the second collimating lens is adjacent to the second spectroscope; and a first reflector and a CCD camera are respectively arranged on two opposite sides of the third spectroscope. The dual-wavelength photon sieve with the regional structure design is adopted to replace the traditional projection objective, the problems of complex system structure and low transmissivity caused by the fact that the objective lens needs to be plated with a double-peak anti-reflection film in order to transmit an alignment light source and an exposure light source with different wavelengths are solved, simultaneous imaging of the dual light sources is guaranteed, the dual-wavelength photon sieve has excellent focusing imaging performance, and the system complexity is reduced.
Description
Technical Field
The utility model relates to a photoetching technology field especially relates to a photoetching alignment system based on dual wavelength photon sieve and two light sources.
Background
The development of the microelectronic industry has been dependent on the progress of micro-nano processing technology, and optical projection lithography has been playing an important role in micro-nano processing technology. The photoetching projection objective, the mask silicon wafer alignment system and the laser positioning workbench are called as three core parts of a photoetching machine. With the rapid development of scientific technology, the characteristic size of the micro-nano structure is smaller and smaller, and the factors influencing the precision, such as the numerical aperture of a projection objective, the wavelength of a light source, an excellent alignment scheme and the like, are researched and researched extremely.
However, the immersion type projection objective lens is adopted to increase the numerical aperture, so that the manufacturing cost, the equipment process and the coupling difficulty of the objective lens and the optical path are increased. Meanwhile, in order to meet the requirement that both the alignment light source and the exposure light source need to pass through the projection objective, all lenses of the objective are required to be plated with the double-peak antireflection film, and for the deep ultraviolet light source, in order to ensure enough transmittance, even if only the single-peak antireflection film is plated, the double-peak antireflection film is difficult to plate, and the double-peak antireflection film can hardly be plated. In addition, the inability to image mask-silicon wafer alignment marks at high resolution is also a problem in lithography due to the limited depth of focus of the objective lens.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned problem among the prior art, the utility model provides a photoetching alignment system based on dual wavelength photon sieve and two light sources has solved in order to see through different alignment light source and the exposure light source of wavelength, and the objective lens need plate bimodal antireflection coating and lead to the problem that the system architecture is complicated, the transmissivity is little.
In order to achieve the above object, the utility model adopts the following technical scheme:
the photoetching alignment system comprises a second reflecting mirror, a third beam splitter, a first beam splitter, a second beam splitter, a photon sieve, a mask and a silicon wafer which are coaxially arranged in sequence;
an alignment light source and a first collimating lens are coaxially arranged on one side of the first spectroscope in sequence, and the first collimating lens is adjacent to the first spectroscope;
an exposure light source and a second collimating lens are coaxially arranged on one side of the second spectroscope in sequence, and the second collimating lens is adjacent to the second spectroscope;
and a first reflector and a CCD camera are respectively arranged on two opposite sides of the third spectroscope.
Preferably, the distance between the third beam splitter and the first reflector is not equal to the distance between the third beam splitter and the second reflector.
Preferably, the photon sieve is provided with a first area and a second area, and the pore size and the number of small pores in the first area and the second area are different.
Preferably, an alignment light path between the alignment light source and the first collimating lens and an exposure light path between the exposure light source and the second collimating lens are perpendicular to a reflection light path between the second reflecting mirror and the silicon wafer.
The utility model has the advantages that:
according to the scheme, a traditional projection objective is replaced by the dual-wavelength photon sieve, the photon sieve is formed by replacing a light-transmitting ring band of a Fresnel structure with small holes randomly distributed on the light-transmitting ring band, a film layer structure can be manufactured, the photon sieve is subjected to regional design, parameters such as the aperture size, the number of the small holes, the distribution state of the small holes and the like in each region are selected to have different optimized values, so that exposure light sources and alignment light sources with different wavelengths can pass through the photon sieve, and plating of a double-peak antireflection film is avoided fundamentally; in addition, after optimized design, the photon sieve has the advantages of long focal depth, high resolution, small chromatic aberration and the like, so that the photoetching alignment system has a simple structure, low cost, high resolution and excellent alignment precision; the method can also adapt to the special requirements of large alignment gap, gap change and the like of super-resolution photoetching, does not pollute the mask plate, increases the use times of the mask plate in the alignment process, and prolongs the service life of the mask plate;
the photon sieve in the scheme has the characteristic of long focal depth due to the characteristic of multi-level secondary focus, and when a large gap exists between the mask and the silicon wafer, high-resolution imaging of alignment marks of the mask and the silicon wafer can be met; and the interference fringes of the high-order diffraction light beams with lower light intensity are filtered, and only +/-1 and +/-2 orders with relatively higher light intensity are reserved, so that the marked images of masks and silicon wafers in the CCD are clear, the amplification factors are the same, the phase difference of the fringes is conveniently analyzed, and the working efficiency is improved.
Drawings
FIG. 1 is a schematic structural diagram of a lithography alignment system based on a dual-wavelength photon sieve and a dual light source.
Wherein, 1, aiming at a light source; 2. a first collimating lens; 3. a first beam splitter; 4. a second spectroscope; 5. a dual wavelength photon sieve; 6. masking; 7. a silicon wafer; 8. an exposure light source; 9. a second collimating lens; 10. a third reflector; 11. a first reflector; 12. a second mirror.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art within the spirit and scope of the present invention as defined and defined by the appended claims.
As shown in fig. 1, the present solution provides a lithography alignment system based on a dual-wavelength photon sieve and a dual light source, which comprises a second reflecting mirror 12, a third beam splitter 10, a first beam splitter 3, a second beam splitter 4, a dual-wavelength photon sieve 5, a mask 6 and a silicon wafer 7 coaxially arranged in sequence;
an alignment light source 1 and a first collimating lens 2 are coaxially arranged on one side of the first spectroscope 3 in sequence, and the first collimating lens 2 is adjacent to the first spectroscope 3;
an exposure light source 8 and a second collimating lens 9 are coaxially arranged on one side of the second spectroscope 4 in sequence, and the second collimating lens 9 is adjacent to the second spectroscope 4;
the two opposite sides of the third spectroscope 10 are respectively provided with a first reflector 11 and a CCD camera 13.
Due to the adoption of the dual-wavelength photon sieve 5, the embodiment can be applied to the alignment technology of surface plasma super-resolution lithography, and more excellent lithography resolution is realized; due to the characteristic of the multi-level focus of the dual-wavelength photon sieve 5, high-resolution imaging can be simultaneously carried out on the problems of overlarge gap, gap change and the like between the mask 6 and the silicon wafer 7, high-resolution imaging can be carried out on marks with different axial depths, the alignment process is simplified, and a light path system is optimized.
The working principle of the embodiment is as follows:
1. when light emitted by the alignment light source 1 passes through the first collimating lens 2 and then reaches the first spectroscope 3, the reflected light passes through the second spectroscope 4 and then passes through the dual-wavelength photon sieve 5 to irradiate on the mask 6 and the silicon wafer 7;
2. diffraction gratings on a mask 6 and a silicon wafer 7 generate diffraction beam interference fringes under the irradiation of an alignment light source 1, then diffraction light on the mask 6 only keeps +/-1 and +/-2 orders of diffraction beam interference fringes after passing through a dual-wavelength photon sieve 5, reaches a third spectroscope 10 after passing through a second spectroscope 4 and a first spectroscope 3, is reflected to a first reflector 11, is reflected back to the third spectroscope 10 at the first reflector 11, and is imaged on a CCD camera 13 after passing through the third spectroscope 10 to acquire the mask 6 interference fringes;
3. diffraction light generated by the silicon chip 7 passes through the dual-wavelength photon sieve 5, diffraction beam interference fringes of +/-1 and +/-2 orders are also reserved, and after passing through the second spectroscope 4 and the first spectroscope 3 and being reflected by the third spectroscope 10 at the second reflecting mirror 12, the diffraction light returns to the third spectroscope 10 along the original light path, and is reflected and imaged on the CCD camera 13 to collect the interference fringes of the silicon chip 7;
4. solving phase information of the mask 6 interference fringes and the silicon chip 7 interference fringes collected in the CCD camera 13 by adopting a Fourier transform method, thereby measuring the displacement between the silicon chip 7 and the mask 6, and correcting the displacement;
5. when the displacement between the silicon wafer 7 and the mask 6 meets the requirement of alignment precision, the alignment light source 1 is closed, the exposure light source 8 is opened, and after the exposure light passes through the second collimating lens 9, the exposure light is reflected at the second spectroscope 4 and then the exposure of the silicon wafer 7 is completed through the dual-wavelength photon sieve 5.
Further improvements to this implementation: the distance between the third beam splitter 10 and the first reflector 11 is not equal to the distance between the third beam splitter 10 and the second reflector 12. Because of the gap between the mask 6 and the silicon chip 7, the interference fringes generated on the mask 6 and the alignment mark generate optical path difference in an optical path, and the optical path difference of the gap between the mask 6 and the silicon chip 7 is compensated through the unequal arrangement of the distances between the third beam splitter 10 and the first reflector 11 and the second reflector 12.
Further improvements to this implementation: the dual-wavelength photon sieve 5 is provided with a first area and a second area, the aperture size and the number of small holes in the first area and the second area are different, so that the dual-wavelength photon sieve 5 can simultaneously pass through the alignment light source 1 and the exposure light source 8 with different wavelengths.
Further improvements to this implementation: an alignment light path between the alignment light source 1 and the first collimating lens 2 and an exposure light path between the exposure light source 8 and the second collimating lens 9 are perpendicular to a reflection light path between the second reflecting mirror 12 and the silicon wafer 7. The alignment light path and the exposure light path are perpendicular to the reflection light path, so that the light rays emitted by the exposure light source 8 and the alignment light source 1 can be accurately irradiated on a preset element, the error is reduced, and the alignment precision is improved.
Claims (4)
1. A photoetching alignment system based on a dual-wavelength photon sieve and a dual light source is characterized by comprising a second reflecting mirror (12), a third spectroscope (10), a first spectroscope (3), a second spectroscope (4), a dual-wavelength photon sieve (5), a mask (6) and a silicon wafer (7) which are coaxially arranged in sequence;
an alignment light source (1) and a first collimating lens (2) are coaxially arranged on one side of the first spectroscope (3) in sequence, and the first collimating lens (2) is adjacent to the first spectroscope (3);
an exposure light source (8) and a second collimating lens (9) are coaxially arranged on one side of the second spectroscope (4) in sequence, and the second collimating lens (9) is adjacent to the second spectroscope (4);
and a first reflector (11) and a CCD camera (13) are respectively arranged on two opposite sides of the third spectroscope (10).
2. The dual wavelength photon sieve and dual light source based lithography alignment system of claim 1, wherein the separation distance between said third beam splitter (10) and first mirror (11) is not equal to the separation distance between said third beam splitter (10) and second mirror (12).
3. The dual wavelength photon sieve and dual light source based lithography alignment system of claim 1, wherein said dual wavelength photon sieve (5) is provided with a first region and a second region, and the aperture size and the number of the small holes in said first region and said second region are different.
4. The dual wavelength photon sieve and dual light source based lithography alignment system according to any of claims 1-3, wherein the alignment light path between the alignment light source (1) and the first collimating lens (2), and the exposure light path between the exposure light source (8) and the second collimating lens (9) are perpendicular to the reflection light path between the second mirror (12) and the silicon wafer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120399493.6U CN214042006U (en) | 2021-02-23 | 2021-02-23 | Photoetching alignment system based on dual-wavelength photon sieve and dual light sources |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120399493.6U CN214042006U (en) | 2021-02-23 | 2021-02-23 | Photoetching alignment system based on dual-wavelength photon sieve and dual light sources |
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| Publication Number | Publication Date |
|---|---|
| CN214042006U true CN214042006U (en) | 2021-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120399493.6U Active CN214042006U (en) | 2021-02-23 | 2021-02-23 | Photoetching alignment system based on dual-wavelength photon sieve and dual light sources |
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| Country | Link |
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| CN (1) | CN214042006U (en) |
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2021
- 2021-02-23 CN CN202120399493.6U patent/CN214042006U/en active Active
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Effective date of registration: 20240327 Address after: 230000 Room 203, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Hefei Jiuzhou Longteng scientific and technological achievement transformation Co.,Ltd. Country or region after: China Address before: 610039, No. 999, Jin Zhou road, Jinniu District, Sichuan, Chengdu Patentee before: XIHUA University Country or region before: China |