TWI362686B - Electro-chemical process system,electro-chemical process apparatus,processor,wafer processor,porous silicon processor,wafer process device and wafer process method - Google Patents

Description

1362686 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to a process apparatus for processing tantalum wafers, and more particularly to an electrochemical processor for making porous tantalum. [Prior Art] 矽 is the basic building block of most microelectronic devices, and other micro-scale components such as micro-electromechanical devices (MEMs) and micro-optical devices are also usually fabricated in ruthenium. In practice, these devices have been used in all modern electronics tm. The bare stone materials used to make such micro devices are generally available in thin, smooth wafers. Porous silicon is a coffin type with tiny openings or holes. These holes absorb and emit light, allowing devices made of porous tantalum to interact with light and electronics to create many uses. Porous ruthenium also has a large surface area and acts as a strong absorber. These properties allow the Rudo Cut material to be used in many devices or products such as mass spectrometry, miCr〇-fluidic, sensors, electrodes for fuel cells; light=, chemical and mechanical devices. ; biochip (bio.·shengsheng ^ ^ (bl嶋(10)); airbag fuse (fuse), and other eve type housing. /~7 publication bamboo can also be used as a porous as used in diagnosis Or therapeutic products. Therefore, porous: large products and technologies will become more and more important. Xikong Shixi is usually made by electrochemical remnant process. Its typical 1362686 is a wafer. Exposure to an electrolyte containing concentrated hydrofluoric acid (HF) and the wafer-side electrolyte will be sealed to the other side of the wafer. The current will be conducted through the electrolyte on both sides. One side is yin: another:: 1:: In the process, the dream wafer can be selectively exposed to light. This 13⁄4 蚀刻 etches holes in the circle. This hole is microscopic. Bribes) Diameter wafers may have holes after the electrochemical process. Porous stone ό ό 彡 彡Λ 七 七. Ten "Starting on the production of Yu Lei Er Xi crystal, and then forming a porous 矽 in its electrochemical process. In effect: ^ There are a variety of porous Shishi machines or manufacturing machines are used, but ^ There is still 1 Duxuan in terms of sinfulness, speed and other design parameters. Hydrogen fluoride is a highly toxic and highly toxic substance. Therefore, it is inside the machine. Because hydrogen fluoride is almost the same as all: j cannot be used for & 可能 inside the processor that may be in contact with hydrogen fluoride. Moreover, the hydrogen fluoride and the electrode cause the wafer to be stained. Μ ^ The reaction between the genus and the small genus will be solved by the reliance ^ South quality porous stone eve The flow, text and electricity W 4 in the process must be uniform. The uniform current flow in the electrolyte will be related to the design of the processor. It is a challenge to achieve the purpose of the plant. Illuminating the wafer will create more difficulties in setting the leaves. With these treatments, “~m is more sturdy, and the θ system is chosen. The end of the ancient machine says that the two are uniform and very bright. Shell porous stone eve is needed. Of course A stable current factor. However, 'the size, shape, and fading position of the design to provide a stable current may affect the process, ', especially in a tight processor design. So, in a At the same time, the porous crucible processor is quite difficult to achieve uniform light output and stable current flow 6 1362686. Existing photo-type porous crucible processors usually use large, high-energy tungsten-teeth lamps or Other similar luminaires. Traditionally, these lamps are placed far from the wafer. As a result, the light is not only on the wafer. It is also easy to reach a large area around the wafer. Therefore, they will consume too much The electricity generates extra heat. Excess heat can cause harm because it affects the liquid used in the process. These liquids usually contain solvents such as isopropane. The design of a low-volt-powered luminaire with a solvent-containing process liquid can create other design problems. ^ Today's processors have provided different solutions to face these projects. When it comes to the provocation of these factors, we still need to change. The method, processor and system design are used to create a porous stone with better quality. SUMMARY OF THE INVENTION In the invention, there is an innovative processor design that can be used in multi-cut production. This new two: The process of high-degree uniformity can greatly reduce the risk of corrosion of the wafer before, during or after the manufacturing process. The processor component reliability and performance, and minus:;: = free to provide long-term stability. Use: = when =: (10) installed can move with the first - seal. - the first piece of connection. In the housing - the second seal is calculated to be axially positionable from the horizontal position; = connected to the second seal. The housing is rotated to a vertical position to allow a wafer 7 1362686 to be loaded and unloaded at its horizontal position and processed at its substantially vertical position. • In another view, 'we can configure one or more luminaires to pass light through a central open area on the first electrode, illuminating a workpiece between the first seal and the first seal ( W〇rkpiece). This design allows the processor to use a tight space design while delivering very good performance. In another view, we can use seal rinsing, current control, and electrolyte compensation I to provide a more stable and uniform process between wafer and wafer (wafer t〇_wafer). One invention also pertains to an electrochemical process method comprising the sub-combination and steps described below. [Embodiment]

Please refer to each drawing and the details in it now. As shown in Figures 1 through 3, a first processor assembly or head portion 34 is coupled to a second processor assembly or base portion 32 to form an electrochemical processor. A motor or other actuator (such as a rotating motor%) can rotate the processor 30 from its horizontal position (as shown in FIG. 3 to FIG. 3, usually a quarter turn) to A vertical position. - The normally designed fastener (4) ainer) 48 is placed at the head and/or base to secure it. There are many types of fasteners that can be used. In a basic form, the fasteners 48 can be secured with only bolts or other fasteners: on the base. Another type of fastener 48 is shown in Figures 1 through 4," with four spaced apart eam handles pivotally coupled to the base 32, each cam handle 50 being coupled to a cam. Buckle-丨卿8 1362686 Field engagement or, when on, the cam handle 50 will firmly seal the head A 34 and the base 32 as shown in the figure - the cam handle % can be opened quickly (to = The outer opening is separated from the base 32 for system setting, inspection or maintenance of the body. Now, with reference to FIG. 5, when the parts are fixed together, the machine and the base 32 can be formed. A C〇ntainment chamber 60' 八1 private cavity 146 and 240 are located inside the barrier cavity 60. Returning to Figure 1STL: the workpiece loading/unloading opening (or slot) 56 extends through the base - A wafer can move through the barrier cavity 6 to the process chamber. The base Μ 2: =: the barrier chamber drain (or opening) and the exhaust pipe, usually opposite the loading slot 56. Into the slot 56. The machine 30 has a frame 62 around the cavity to seal the electricity: the process of the 'processor 3 configuration The two electrodes and the two processes can be used to move the process chamber seals to be movable, and the -electrodes can be moved together with the first shifting type (four) pieces. The mobile seals can be fixed or moved in the machine. \座:=2. The other electrode and the process chamber seal can be fixed in the position of the processor 3〇 and the seal is located at the position directly above the head of the machine. The device is located at the bottom, and the configuration is not the same as the invention. In addition to the two-electrode and the two-chamber cavity 6G, the shirt assembly includes those forming the damper. The element 'can be omitted, or replaced by eight special function devices. 乂9 ^^686 The specific mechanism or driving force for moving the mobile seal is also not an element. The energy required to move can be hydraulic, Pneumatic, electrical, pneumatic or vapor pressure, or mechanical force is provided. The figure shows the hydraulic design (hydrauUc, f〇ree) with water as the hydraulic fluid. In the example of a hydraulically driven processor As shown in Figure 5, a piston cap 78 is attached to the machine. The top cover 7 is mounted on the top cover 7. A piston 74 is fixed at a position opposite to the top cover by a piston nut 76 and a piston plate 8. A cylinder 82 is supported around the piston 74 at a lower end of the piston 74. The member 94 seals the piston 74 to the inner wall of the cylinder. A piston 88 is attached to the upper end of the cylinder 82. An inner piston ring seal 9 is sealed on the piston 74. An outer piston ring seal 92 will piston. The ring is sealed to the cylinder 82. For clarity of illustration, the drawings herein omit the distribution of the general liquid tubes, wires, and cables in the mechanism.

A cylindrical bore 86 is attached to the annular flange 84 of the cylinder 82, and then an upper 3 pole ring (or first electrode ring) 106 is attached to a = flange of the cylindrical ring 86 with a nut 112. - the upper electrode or the first electrode % (in this case, the cathode is fixed at a position between the electrode ring i 〇 6 and the cylindrical ring 8.6. The electrode % = the cylindrical surface is respectively the first and second seals 11 〇, 1〇8 is sealed in the electrode coating second seal 104 and a fourth seal 105 to seal the back surface of the electrode 96 on the cylindrical ring 86. The annular groove 1Q2 is disposed on the =6 piece 104 and the fourth seal 1 () 5 to improve the leak detection, the following electrode lead 95 through the upper joint plate (10) on the "= circle: ring ... - joint 16 " with a cap.. Even: two = (buss plate) 98 The current s-disc hat 玎田卡t 接板的面面... I can be used to attach the splicing plate to the aspect of the electrode 96. Typically, multiple nuts are used to geometrically 1362686 The board is fixed on the electrode. The number and position of the nut will affect the uniformity of current flowing through the electrode, and ultimately affect the current uniformity on the wafer. • Refer to Figure 5 and Figure 15 for the first seal. The member 128 is attached to the bottom surface of the electrode ring 1〇6 by an upper seal clip-ring 132. In Fig. 5, a cylindrical open space CC is located at the electrode 96 and the head seal. Between the planes, when the seal 128 is in contact with the wafer, the space cc will form an upper process chamber (4). A = the upper end of the bellows 120 is attached to the top cover by an upper telescopic fastener! The lower end of the upper cam ring 72 is attached to the end edge of the electrode ring by the lower telescopic valve fastener 124. Therefore, when the = column 82 is actuated, the entire movable electrode assembly 152 The piston 100%, the cylinder 82, the cylindrical ring %, the electrode %, the electrode ring 1〇6, and the seal 128 can be vertically moved between the top cover 7G and the base 32. The telescopic valve 120 can maintain the electrode assembly 152. Sealing with the bottom member 2. Referring now to Figures 7 and 10, an electrolyte port or outlet 148 is connected from an outlet or recirculation line fitting 15G to a line 148 in the electrode ring. The inlet 142 (configurable on the outlet side) leads to the electrolyte recirculation line (or population) joint 14 〇. The connection (as shown by the dashed line in Fig. 10) connects the joint 14 到 to the upper joint frame (10) joint 154. A diffuser plate having a plurality of small openings is provided on the inlet 148 of the cavity M6. On the side wall of the top cover 7〇 There is a window (or with the setting of 73) to provide a liquid joint or a required gap. When the electrode combination is raised and lowered, let the power supply ^ and the chemical liquid recirculation line (or outlet) joint 150 move. Still refer to Figure 7 - Optical Liquid Detection Detector 17. Passing through the cylindrical ring %: A 1362686 first 34 can be separated from the base 32. The wires and liquid lines connected to the head can be elastic, so that the head can be removed without unplugging the connecting line. ^. The seat is removed. _ - Figure 10 shows the head portion 34 separated from the base 32. Here the head cover 70 is removed to facilitate the description of the embodiment. As shown in Fig. 10, the upper header 180 and the optical flag plate 168 are attached to the cylindrical ring %. The nut is generally used to secure the piston cap 78 and the piston plate 80 to the top cover 7 ,, which is shown in the figure after their assembly, without the top cover 70 being shown thereon. The upper optical sensor 162 and the lower optical sensor 164 are attached to the side wall of the top cover 7A. However, in Figure 10, they are for illustrative purposes only. The electrode ring 〇6 has a pair of alignment pins extending into a vertical slot on the inner surface of the top cover 7 so that the angle of the head cover can be aligned with the movable electrode assembly 152. As shown in Figures 1, 2 and 9, the cylindrical water supply line and return line extend from the joints 176 and 178 on the upper joint plate 180 to the upper cylindrical port and the lower cylindrical port 156 and 158 which pass through the cylindrical wall 82. The water is alternately supplied to the upper and lower cylindrical ports 156 and 158 by hydraulic pressure to move the movable electrode assembly 152 up and down or open and close. Fig. XI, Fig. 12, and Fig. 13 show the pedestal portions 2 separated from the head 34. Referring to FIG. 11 , FIG. 12 and FIG. 8 , the three guiding columns 214 extend upward from the electrode ring 2G4 into the well hole ι 4 of the head electrode ring 1 ( ) 6 . The column seal 215 connects the base of the column with the column body 215 The base electrode ring 204 is sealed. In general use, the guide post 214 is not exposed to the corrosive electrolyte. As shown in Fig. 10 and Fig. 12, the two fronts 13 1362686 are closest to the loading slot 56. The guiding posts 214 are separated by a DD distance, and the DD is generally larger than the diameter of the wafer. The third guide post 214 is located closer to the rear side of the processor 3, the water hole 58. Referring to Figures 8 and 12, the guide post 214 is positioned on a concentric circle that is slightly larger than the seal 128. The portion below each of the guide posts 214 includes a shoulder 218 which acts as a hard stop when the processor is closed and defines the spacing between the seal and the seal, and thus The extent to which the seal is pressed against the wafer is determined. # Referring to Figure 13, the base 32 has a base ring 200. A piece of seat 2〇2 is located at the upper end of the base 裱200 for placing a barrier cavity seal 36, as shown in Fig. 3. The barrier cavity seal 36 seals the head of the machine to form a barrier cavity. Like the portion of the head 34, the lower electrode or the second electrode 208 (which is the anode in the present embodiment) is positioned on the base by the bottom S electrode ring 204 and the base electrode cover 2 〇 6 gj. The first and second seals 11A and 1〇8 seal the electrode 2〇8 to the base electrode ring 204. Similarly, the third and fourth seal members 104 and 1〇5 located opposite the groove 1〇2 seal the base electrode ring 2〇4 and the electrode 2〇8. For example, the same machine head 34. Minutes — optical liquid debt detector! The river passes through the base electrode cover 2〇6 to the groove 102. A plate % is attached to the electrode 2〇8 as described in the head 34 of Figure 5 above. Referring to Figures 13 and 15, the seat seal 210 is secured to the base electrode ring 2〇4 by a base seal fastener 212 on the base electrode ring 2〇4. As shown in Figs. 5 to 8 and Fig. 16, the wafer guide (or protrusion) 213 slightly protrudes upward from the bottom wire sealing member 212. As described below, when the wafer is placed on the base seal 210, the wafer guide 213 will assist in the alignment or positioning of the dome. The upper seal (or head seal) 128 is generally the same diameter as the 1362686 seat seal 210. In fact, the head seal and the base seal can be the same. As shown in Figure 3, we can modify the seals ία and 210 and other components in the processor to process wafers with flat edges. The seal 'seal holder, and the electrodes in this example, may generally be D-shaped. For wafers, these elements may be circular.

The upper seal collar 132 has an elastic ejector 130. When the first seal 128 is connected to the wafer, the film will be slightly pressed against the outer edge of the wafer. The dotted line in Fig. 15 indicates the position of the ejector pin 13G when the wafer is not present. When the wafer is present, the bottom surface of the ejector sheet is placed on the upper surface of the outer edge of the wafer. The piece 128 and the upper seal out of the crucible 132 are designed such that when the mobile electrode assembly 152 is moved away from the wafer 25 (), the seal 128 is first separated from the wafer, and the ejecting sheet 130 continues to crystallize. The round support is on the base seal. This avoids the adhesion of the wafer to the seal when the seal 128 is raised after the process is completed. - As shown in Figure 13, an electrolyte inlet fitting 220 leads to an inlet 224 inside the base electrode ring 2〇4. As with the head 34, a diffuser or similar liquid diffusion element 126 will be attached to the inlet 224 in the base electrode loop. When the base seal 21 is in contact with a wafer, a base or lower process chamber 240 is formed between the electrodes 2, and the lower process chamber 24 is surrounded by the bottom electrode ring 204. An electrolyte outlet 226 is passed from the lower process chamber 240 to the - electrolyte outlet connection. A diffuser plate 126 is also disposed on the electrolyte outlet 226. Returning to Figure 5, the connector frame 228 is attached to the base electrode cover 2〇6. The optical liquid detector 17 on the base 32 is connected to the header 228 - 15 1362686 connector 232 plus the electrolyte line connection thereon, which is designed to integrate the wiring of the stationary processor. The lower electrode line 234 is connected to the tab 98 on the electrode 2〇8 through the joint 230 of the electrode cover 2%. • In the processor shown in Figures 1-8, the electrode % in the head 34 is typically the cathode, while the electrode 2〇8 in the base 32 is typically the anode, which can be selected from the polarity of the current source connected to the two electrodes. Decide. Although a variety of materials are available, the design here is an electrode made of a tantalum material doped with boron ions φ (B〇r〇n_d〇ped). Each electric thickness is approximately 25 centimeters (mm). The diameter of the electrode is substantially the same as the diameter of the wafer. The diameter of the head seal 128 and the base seal 21〇 is usually smaller than the diameter of the wafer, and can provide an exposed area of the outer edge of the width of about _5 cm (the outer peripheral area of the wafer beyond the seal ^ The surface of the electrode can be plated with a layer of diamond to make it electrically conductive. ^ 〃 Since the electrolyte usually contains concentrated hydrofluoric acid, the components in the processor 3 that are in contact with the electrolyte (4) Teflon (fluorine resin rpvdf (polygas, ethylene) It is made to resist the corrosion of hydrogen septic acid or other reactive chemical electrolytes. The nuts or other joints in the processor 30 are usually made of similar plastic or non-metallic materials. 5. The connector 98, the electrode wires, and the wires that are in contact with the nut are made of metal because these components require high electrical conductivity. However, these components are not the only gold components in the head portion 34. Through the sealing of the first seal 11〇, the second seal 1〇8, the third seal 104, and the fourth seal 105, these metal components can be insulated from the electrolyte introduced into the process chambers 146 and 240. Any leakage around the electrode In fact, the electrolyte will be collected first at 16 1362686 at /冓~102 and detected by the optical liquid predator. In addition, the steak pores 116 and 118 will drain any electrolyte from the back of the electrode. When the leak occurs, the controller will turn off the treatment 贞3〇 when the electrolyte leaks through the fourth seal = 105. In this way, the solution will be completely isolated from any metal part of the machine 30, and therefore It can avoid the electrolyte, the wafer is contaminated by metal or the electrolyte is accidentally leaked to the head or the base.

& 3G provides a high average degree of current through the process chamber 146, but in a relatively small space. The gap around the processor (which allows the "rotation between the horizontal position and the vertical position" is also quite small. Returning to the figure in the illustration, the electrode is 15G cm straight and the thickness is about 25 cm. In terms of the design of the type It is possible to use an electrode (or wafer) having a diameter to thickness ratio of about four to one. The height of the cavity (Fig. 5, cc 2 is also about the same as the thickness of the financial electrode, and the ratio of the cavity height is 2 · A range of 5 to 1 to 1 to 1 can be used. The thickness of the cavity and/or the thickness of the electrode can of course be exceeded, but this will make the whole processor larger, that is, the current is even; ^ m: the diameter and height of the barrier cavity 6〇 and for the present invention: important 'can be selected to match the size and/or shape in the tight space inside the processor. The cavity 146 shown in the figure is similar (10) The height 'the cavity' can be higher than the other body. The diameter and height of the cavity 146贞240 are the minimum: in addition to the smaller processor, this can speed up the process. Because Μ liquid can fill the cavity more quickly. Typically, '',, / The manufacturing process may be about 2 8 or 2 i 0 or the diameter of the workpiece; 5 work 60. The height of the 1JOZ000 of the barrier cavity may be about 5% to 5 % of the diameter of the seal 128 or 210. The machine 3 is usually controlled by an electronic controller, such as the control of the 304田^, 304. When using the t 'processor 30, first load a = circle 25_〇 ° at load time (or When a wafer is loaded, the processor 30 is located at a horizontal position as in the second to the right. The horizontal and vertical directions referred to herein refer to the orientation of the P' circle 250. In the upper position, as shown in Figure 5 to Figure 9. A wafer is moved to the inside of the processor via the manned groove 56 'usually by the - machine arm. When the wafer When moved into the interior of the processor, the edge of the wafer will contact the rounded guide 2 13 projecting from the base. This allows the wafer 25 to be placed in position between the seals 128, 210 and aligned with the center of the circle. The wafer 25 can be loaded from the front or rear facing the lamp assembly 27 or other light source. The wafer 250 will be placed in the lower seal or The manipulator arm (or other mechanism used to move the wafer) is withdrawn from the seat seal 21. The controller opens the valve to allow water to be supplied under pressure to the lower cylindrical port 158. • This causes the cylinder 82 and the entire mobile type The electrode assembly 152 moves downward. Referring to Figures 9 and 14, the water inside the cylindrical body 82 above the inner piston seal 94 flows out of the cylinder and the processor 30 via the upper cylindrical port 156 and a return line, respectively. The hydraulic fluid (hydraulicfHud) is not used to contact the electrolyte or the wafer 250. Therefore, the purity of the water is not important here, and the tap water under normal water pressure can be used. The mobile electrode assembly 152 is always moved downward until The bottom of the wafer contacts the shoulder 2] 8 on the guide post 214. The down detector 164 provides a signal to the controller to confirm that the mobile electrode combination is already in the process position. We can selectively adjust its supply to 18 1362686 but adjustments are not necessarily required. The upper seal or the head seal crystal/250 bottom (four) member 210 is also in the closed state of the post-processor 30, as shown in Fig. 14. The water pressure will be stable in Process #. : Photograph - to Figure 4, the controller drives a rotating motor 3 = two axial rotations of ninety degrees to make the wafer 25. Can move to - vertical 1 Fuxian 2 loading slot 56 up and vent 58 down. The rotary motor 38 (or actuator) can be mounted on a deek 42 or other support surface. In the boring machine 3 can be placed on a pair of axle seat plates 332 connected to the base 32. The four-slide 'shaft seat plate 332 is attached to the flange bearing 4 ,, and the rotation ^ 38 is connected to the right shaft seat A plate 332 is optionally provided with a gear ddve reducer 39. The controller then opens the valve to allow electrolyte to be supplied to the processor 30. The electrolyte flows into the upper process chamber W and the lower process chamber 24 through the inlets 148 and 224 and the diffusion plate 126, respectively, as shown in Figs. 7 and 14. The process chamber will be filled from the bottom. The chamber can be vented to control the flow of liquid return lines 142 and 226 when the electrolyte is full, or at other times, or throughout the process. Current will be passed to electrodes 96 and 208. The current from the cathode or the first electrode will sequentially flow through the electrolyte in the cavity 240, the electrolyte in the wafer, the cavity 146, to the anode terminal or other electrode terminals. The wafer has sufficient conductivity to provide the bipolar electrode (biP_ el Gde) function. The electrolyte is continuously supplied at a low flow rate to continuously renew the electrolyte in the chambers 14〇 and 24〇 without turbulence. 19 1362686 In the process, chambers 146 and 240 are typically filled with electrolyte to provide a more uniform process. Gas generated during the process can be carried away by circulation of the electrolyte between the cavities 146 and 240. In addition, individual exhaust ports are also selected for use in the chambers 146 and 2*. Motor 38 is controllable to oscillate processor 3A in an almost vertical position. Whether in the cavity filled with electrolyte, during the process, or both, this action can help the gas to be removed to promote mixing of the chemical liquid or to aid in the dispersion of the process fluid or the rinse solution. The fabrication described at this φ produces amorphous porous silicon. The parameters of the electrolyte, such as chemical composition, temperature, pressure, flow rate, and temperature, etc., can be varied to achieve the desired process results. The current can also be selected as desired. The current can be increased to a level high enough to convert the Xikongshi process to the Wafer p〇Hshing process. The electrolyte may contain water, a high concentration of hydrogen fluoride, and an alcohol such as isopropy 丨 alc〇h〇1. For example, when the process continues for two to ten degrees, the surface of the B-circle 250 has been completed to form a porous stone, and the current will be discharged from the cavity by the knife-cutting electrolyte. Then the cavity will be injected into the cavity. A lotion (such as deionized water) is used to clean the chamber and the workpiece, and then the rinse is drained. The rotary motor 38 is driven in the reverse direction to axially return the processor 3 to its original horizontal position in Figure 1. The controller will then provide water pressure in the opposite direction to the cylinder 82 to lift the mobile electrode 152 apart from the wafer 25A. As shown in FIG. 15, the eject〇r tab 13 on the upper seal ring will fix the wafer 25〇 on the base seal 210 until the head seal U8 and the wafer 25〇. Separation. This can be 20 1362686 chemical processing steps, such as engraving the reticle or other enamel on the wafer, whether or not the electrolyte is changed. Refer to Figure 5, Figure 6 and Figure 7. During the process, the electrolyte is enclosed in the upper and lower process chambers 146 and 24〇. The two chambers 60 are surrounded by There is an opening at the inlet 56 and its opposite resistance = tube 58 and, in addition, there is no liquid path of 60. The telescopic valve 12 〇 seals the upper electrode ring 1 〇 6 : on the :: cavity. The lotion (such as water) can be cleaned through the interior of the tank 2. The all exposed parts inside = = Configurable rinsing nozzle 252 to clean the chamber. If the mouth is connected to a lotion supply The rinse solution can be supplied between the wafer and the wafer. The processor is opened and the seals 128 and 21() are completely exposed. It can be cleaned to almost all the surface of the seal and removed. Any electrolyte trapped or attached thereto. The rinsing step can be performed again when the processor 30 is turned to the vertical orientation, and the rinsing liquid will flow through the barrier chamber 6Q due to gravity and is discharged through the barrier chamber drain hole 8. Outside the chamber, the rinsing in the case of opening the chamber maintains the processor in an initially uniform and stable process. Because it can be thoroughly rinsed on every surface of the process = all surfaces in contact with the electrolyte (or other chemical liquids used in the process). During the actual process of the wafer, the lubricant can be made essentially non-conductive. The cavity flows through the barrier cavity 6〇. Because the electrolyte is sealed in the process chambers M6 and 240, the rinse solution does not come into contact with the electrolyte. The rinse solution only contacts the seal. The outer surface and beyond the seal 22 1362686 128 and 210 wafer annular outer edge part (_like about 2 liquid is a conductor, any electrolyte is not in the middle of the electrolyte) because of the electrolysis and the leakage will change the original Handle a stable and uniform conductive path in the last name μ. This will deal with the instability of the process of the earthworm t and the formation process. Let the oxazole liquid flow through the barrier cavity to remove any leaking electrolyte and let the uniform conductive path be washed. High-quality porous 矽. The person required by the temple can also take the electrolyte leakage or other non-electrolyte flow or flow through the barrier cavity to take away any 疋 疋 let the solution. The following description contains an example 3疋~路的电统. Automation of the process chamber barrier FIG rinsed several lines are not to another Hing FIG.

Γ 1 -) design. - The head 434 is attached to the top surface of the base 432. The anode assembly 444 is attached to the face of the base 432. The illumination module 446 shown here is connected to the anode assembly 444:: 434, the base 432, the anode assembly, and the illumination module, which is electrochemical, _. Referring to Fig. 19 and Fig. 20, - Ma ^ = to: : (: medium - turning motor 438 or the like) can carry the entire processor 43 〇 out of position 7 in a straight line or a load - circle to = At the same time, the head 434 can be the same as the head 3M of the above-mentioned figures 1 to 3, so the machine # 434 will not be repeated here. The design is the individual way of operation. All of the steps or assemblies associated with processor 34 described above may also be used in the description of processor 434. " Referring to Figure 22, the base 432 has a base ring 5〇〇. A piece of seat 502 at the upper end of the 23-piece ring 5〇0 holds the barrier cavity seal 436 as shown in FIG. The barrier cavity seal 436 seals the casing 434 to the base 432 to: block the cavity. As shown in Fig. 22, the anode assembly 444 is attached to the & garment: the side of the crucible facing the head 434, that is, the bottom surface of the base (3). In the figure, a channel portion 56 of the anode assembly is connected to the base ring by a screw: a person. The passage seal 562 is fixed to the anode casing portion by the upper edge of the passage portion and the base ring 5 裒 电极 electrode (here, the anode) 564. The front end (or top end) of the anode 564 and the rear end of the anode 564 (or the wrong anode seal 567 are divided into the bottom of the channel portion brush and the 2-pole housing 561. A conductive ring (c〇ntact) 565 is located at the anode. ... = housing: 61. A wire or wire (not shown) is connected to the garment motor to the wire end via connector 592 in Figure 25. Anode process chamber (10) (which will fill the process during the process) The (4) dry L is sealed by the seal 567 and isolated from the ring 565. The window π 566 is clamped to the anode casing 561 by the window σ clamp: 566 is also sealed to the anode casing by a piece 567 As above, the == circle 568 can be fixed to the channel portion 56 by a screw 569. The window can be two; 1: material. As shown in Fig. 22, the anode 564 is annular, and can be divided into two parts, and all parts of the anode are arranged in the circumference. The outer part of the ding. Therefore, the 〆+ will block the light path LP from the end of the illuminating module 446 to the end of the wafer 55. The anode 564 has a tapered inner surface s, as shown in Fig. 22. The angle AA is usually about (7) to % or Μ" degree S of the angle AA can be allowed to flow to the surface end of the wafer in the electrolyte 136 2686 The current is more uniform. The surface of the anode 564 can also be made in a straight vertical shape = 'no angle at any angle'. However, with this design, there will be more current. Flow through the electrode table closest to the wafer. Since it is: the path with the lowest resistance value, the maximum diameter of the inner diameter of the pole 564 generally varies with the diameter of the wafer to be processed. The figure shows that a processor is modified to handle a diameter of six inches ( 150 mm) wafers. However, processor 43 can of course be scaled up or down to handle wafers of other sizes. #封件, such as seal 562 or 567, and some different types of seals shown in the figure, It can be a 〇-type ring or a seal that is compatible with the chemical process of the chemical processing process used in the processor. As shown, although the anode group- 444 various components and some other components are The screws are fixed, but other joining techniques can be used, such as by adhesives, welding, clips, knots, or unitary. See Figure 23 to Figure 24' Illumination module 446 can generally be concentric The circular mode is connected to the anode assembly 444. The illumination module can be attached to the bottom or back of the anode assembly 444 by a mechanical Φ connector or a junction. The specific illumination module shown herein comprises a combination of lamps 5 and A reflector combination 580. The details of the combination of luminaire combination and reflector design can vary depending on the application. In some designs, the reflector can be omitted. Refer to Figures 26 through 28 'The luminaires shown in these figures The combined example includes a plurality of luminaires 574 secured to a socket 575 in the luminaire housing 571. Liquid coolant connections 576 and 577 are coupled to a coolant passage 579 inside the luminaire housing, as shown in FIG. Power is supplied to the fixture 574 via a power connector 578 and a cable thereon to a pair of semi-circular hubs 573. - Housing 25 1302686 盍 572 covers the back of the luminaire housing 571. An example of the combination of luminaires 570 in Fig. 26 and Fig. 27 is arranged in a symmetrical pattern. In particular, two of them: the gossips are arranged in a circular manner, usually with a spacing of 6G degrees, and a seventh luminaire located around the center. The specific lamps here are not a-a? watt, 12 volt, and a 4G point light emitting light. The six bulbs 574, which are not in the vicinity of the central luminaire 574C, as shown in Fig. 28, are slightly outward. Lamp = The angle between the upper axis L1 and the t-light fixture 574C#LC is approximately 2^ or 3 to 5 degrees. When combined with the reflector described below %. When used together, the luminaire combination designed to provide a uniform light source. Other luminaire combinations have different luminaire counts, and the luminaires are designed to be used in other processor designs to provide a consistent light source. Referring now to Figures 23, 24, 29 and 30, the reflector assembly 580 has a reflector 582 inside a reflector cover 58i. Liquid coolant connections 59A and 591 are connected to a reflector such as a coolant passage. A lens 585 is located between the window 583 and the diffuser 586 inside the reflector cover 581. The inner surface 593 of the reflector 582 (facing the lens 585) is highly reflective. Window 583 (which may also be sapphire) can be sealed to top cover 581 by a sealing member 584. The diffuser will be frosted glass or other light diverging components. A front retaining ring 587 is attached to the reflector cover by screws 588 and holds the diffuser, lens and window in this position. Referring to Figure 29, lens 585 (typically also frosted glass) has a central radius region [the ruler is aligned with central luminaire 574C, and peripheral radius region LR1 is aligned with six enclosed bulbs 574. In the twenty-one lens 585, the radius of the LRC is about 1.5 1362686, and the radius of the LR1 is about 4 inches.

Because the illumination module 446 (which includes the luminaire assembly 57 and the reflector assembly 580) provides the light source to the processor, the illumination module does not have to physically contact the processor 43. The illumination module 446 can be a separate unit on the bottom plate 442 or other structure (or nearby) that is not coupled to the processor. As shown by the dashed line in Fig. 20, the separation design of the illumination module 446 and other parts of the processor can reduce the length or height of the processor, and the processor 430 can rotate between the two positions with less gaps. Figure 20 shows. In this design, when processing: located in the process position shown on the left side of Figure 20, the illumination module can be fixed in position to illuminate the window 566 of the anode assembly. However, when the processor is rotated to its processing position, the illumination module 446 is moved to the position adjacent to the window π 566 to improve its illumination efficiency. Therefore, we can mount the illumination module on the -orbit, rotary f, or other mechanism so that it can move to a position adjacent to the window (or combination of anodes) during the process | After the end, the illumination module is removed to allow the processor to switch back to the loading/unloading position shown on the right side of Figure 20. As shown in Figure 25, the upper-import 524. A diffuser or similar liquid diffusing element 126 can be attached to the inlet 524 as part of the head. By contacting the wafer holder 51A with a wafer 550, a lower process chamber or an anode process chamber 54A can be formed between the window 562 and the wafer 55, and the anode 564 is adjacent to the bottom of the lower process chamber 540. - Electrolyte outlet 526 is passed from lower process chamber 540 to electrolyte outlet joint 522 on base 432. A diffusion plate (3) can also be placed on the electrolyte outlet 526. 27 1362686 % (ring contact) 565 and wire are sealed

The liquid contacts or corrodes other areas of the process chamber. In the anode combination 444, the ring (rh 567 sealed and isolated from the process chamber 540) now back to Figure 25, the lower process chamber or the anode process chamber 540 has a height DD scale of about the upper process chamber or The cathode process chamber 146 is 2-5 times or 3-4 times the height CC. The size of the DD is from the upper surface of the window 566 to the a circle 550 (when the processor 430 is closed as shown in Figure 25. State or process state. The inner diameter of the anode (the [Η] in Figure 25 is the same as the diameter of the seal 510 and is concentric. To provide a small and highly uniform current processor, the DD size is generally about It is between 60-100% or 70-90% of the IE size. The DD size allows for a longer channel length than CC, which provides a more uniform and stable current to the wafer (because the current flows from the ring anode) Non-disc anode. In use, the head 434 will operate in the same manner as the head 34 described above. During operation of the processor 430, the luminaire 574 will be opened and liquid coolant (such as water) will be drawn to the luminaire. Cooling channel 579 in the combination. Liquid coolant will also be drawn The cooling channel ring in the emitter assembly 58. The light from the luminaire 574 is focused by the lens 585 and then diverged by the diffuser 586. This produces uniform light at the bottom surface of the wafer 55 。. Light, current, and chemical process liquids can process the twins 28 1362686 into a porous crucible. The current flowing through the wafer 550 is monitored. As the process progresses, the resistance typically drops and the current increases. The voltage of the supply electrode and/or the intensity of the light need to be adjusted during the process. The process parameters of the electrolyte and processor 434 can be the same as those of the processor 34 described above. After the process is completed, the lamp 574 flows to the electrodes 496 and 564. The current will be turned off and the electrolyte will be drained out of the chamber. The chamber and the workpiece will be filled with a lotion (such as deionized water) for cleaning, and then the rinse will be removed. The processor gas (such as heated nitrogen) is used to dry the wafer. Then the rotary motor 438 is reversely activated to turn the processor 43 back to the horizontal position shown on the right side of Figure 10. If required, The processor 434 can operate without a light source or current. This is a purely chemical process rather than an electro-optic process. The processor 43 can also be configured to provide a photochemical process that is used to source the wafer or workpiece. The process chemical liquid does not provide any current. In this step, the lamp 574 4 UV lamp. The processor (4) can also operate with light only without current 'which is a photochemical process. Anode, and σ 444, even Only the anode ring can be used in a processor that does not have a light source. In this non-fourth design, the nozzle head is configured to pass liquid through the open area (4) in the middle of the anode ring on the wafer, which is the function of rinsing. The illumination module 446 can be replaced with the nozzle head or the spray module 446. Figure 31 shows another processor design 350 having an anode assembly 444'-reflector combination and a 29 1362686 luminaire combination on both sides of the wafer 55'. In this design, both sides of the wafer can be exposed to light at the same time. One electrode ring 564 can function as an anode and the other electrode rings act as a cathode. The first and second optical path electrode units 36A and 370 may be formed in combination with the base 432, the anode assembly 444, the reflector (lens) combination 58A, and the luminaire assembly 520. The actuator 352 is responsible for moving the single or two light channel electrode units to seal or unseal the wafer 550. As shown in Figures 32 through 35, the processor 30 or 430 can be used in an automated process system. However, for the purpose of understanding, the following description of Figures 32 to 35 will be directed only to the processor 30. A variety of automated systems can be used herein, including arranging a plurality of processors 30 in any desired manner (e.g., linear alignment, arc alignment, vertical stacking, etc.). In the automated system 300 of Figures 32 through 35, the two processors 30 and the two rotary rinse dryers 322 are disposed within an enclosure 302. On the front side of the casing 3〇2, a loading window is disposed at the loading station/loading station. The air inlet 31〇 is located in the casing: but the second-mechanical arm 316 moves along the side rail to move the wafer 25. Self-loading 3G6 loading or unloading the processor % or rotating the dryer. An isolation wall 318 is disposed between the machine and the arm 316 to avoid isolation of the process chemical liquid used in the processor 318. End clamps 2, Η An opening (.Pening) ' Let the end of the arm 3 16 en effect〇r) into the processing 〇 318 and the processor 3 〇 in the wall in the processor 3. With 32. ::= Wafer transfer area 34〇. When the wafer is internal and the robot arm is 3 = / hyperactive, the wafer remains in the transfer zone. Therefore, the second process = cool code ^ The process liquid left on the circle will only touch the end clamp 1362686, and will not contact the mechanical arm 316 from the other part. A ^^ system (4) (four) touch control stolen 304 select m ππ, β processor 30, rotary rinse dry machine 320, and other types; raw ~ ρ. ^ parts of the movement and operation (such as pumps, valves, to Motivation, screens, sales, smashing, communication devices, etc.), this part is known in the field of Feng conductors. This [knife in + board 324, wall 318, chassis 302, and The other parts of the system 300 can be further made of plastic materials to avoid contamination and corrosion, and the other parts of the system can be further made of plastic materials. Figure 36 shows a perspective view of the taihe gripper 640a used in the main twenty-five system of Fig. 3 + -; 5 Γ. The end of the azole + & 131 is a gripper 640a comprising a first gripper 660a and a first hitting squirrel 660b, both of which are disposed in a second stalker 660c opposite. The opposite first holder 640a is set to extend to the position of the workpiece and is clamped and continued.馇 , ^ 1 eight through the edge. The first holder 640a includes a yoke portion 649 for the first and second jaws, and a blade 642 for loading the third holder _c. Both the yoke assembly 649 and the blade 642 can be actuated to move between the release position and the gripping position. Therefore, the yoke assembly 649 is coupled to a carriage (4) by a yoke drive rod 636a. The blade is connected to the blade carrier state by a blade drive bar. The blade drive bar 636b is protected by a blade seal 637, while the drive bar 6 is protected by a yoke seal 639. Thus, when the end gripper 64 〇 & is used in system 300 (which is a harsh chemical environment), the components in housing 645 can be protected from exposure to these chemical liquids. The components external to the housing 645 are made of plastic and/or other materials that are resistant to the chemical environment. The blade bracket 648 is guided along a straight path by an internal linear guide, and the yoke bracket 638 is guided by a blade bracket 648 31 1362686 along a parallel and overlapping linear guide. . Both the carriage (4) and the blade holder 648 are connected to a motor (4) by a conveyor 65. The motor (4) and transmitter 650 are designed to simultaneously move the blade (4) portion during actuation. Figure 37 shows a top view of an end gripper 64A at its release position. The holder 66〇a_660c is retracted from the workpiece 25〇. The transmitter 65 is responsible for transmitting the force output by the motor 641. When the holder 66〇a 66〇c reaches the position of the eight-position, the force applied by the holder increases. The 'transmitter 650, as arranged in the figure, contains an amp 651 driven by a stirrup 641 and a worm gear (6) engaged with the worm, the worm gear (5) being rotatable with the axis of rotation c of (d). (d) 652 is connected to a two drive link (dnve links) 653, which is a blade drive link 653a between the connection_wheel (5) and the blade carrier state - it is a yoke drive between the connection pad (5) sister bracket 638 Link 653b. When the worm gear 652 rotates with the worm wheel rotation axis c, both of the drive links 653a-b move in opposite directions such that the blade carrier 648 and the yoke bracket 638 approach or move away from each other. Therefore, the first gripper and the second gripper 3 660a-b f simultaneously approach or simultaneously withdraw from the third gripper 660c. As shown in Fig. 37, the drive links 653a_b are attached to the pivot points G and h, respectively, in an eccentrically manner with the worm wheel rotation axis c. Therefore, the gain force applied by the drive link 653a (incrementaiization) is the minimum when the blade pivot points G and Η are at the twelve o'clock and six o'clock positions respectively, and the gain force will follow the knife. The plate pivot point G, H is rotated away from the position to increase. In the configuration shown in Figure 37, the blade drive link 32 1362686 6 is rotated counterclockwise from the six f:clock direction to its gripping position, while the L 653b is counterclocked from the twelve o'clock direction to its The advantage of the gripping position holders 660a-c increasing the applied heart during the gripping position is that the gripper can clamp the workpiece more stably and the workpiece is mishandled. There is no advantage to the configuration shown in Tian. There is also an advantage. The combination of 642 and light combination (10) is more synchronous with the gripping action. Calling: It increases the accuracy of the placement of the workpiece, especially when it is released. Figure 28 is a plan view of the third gripper 66〇c and the workpiece 25. The third central feeder 660. The human wheel, the human I knife's wearing wheel 663 and a needle roller (n. connected to the blade 642. The roller 663 includes - upper guiding bevel = guiding bevel 664a_b and a middle indirect surface (6). When the workpiece is clamped When the state 660c is gripped, the workpiece will be close to the joint surface 665. The joint surface 665 and the lower guide slope surface are both at the intersection of the servant. In the process of release (ie, when the first-and second-stage extractor 66Ga_b is retracted in Fig. 37), since there is no clamping of the first and second, the gripper is full, the workpiece It is easy to slide along the lower guiding slope 664b. The sample will cause different workpieces 25 会有 to have different and unpredictable results during the release process. Therefore, one of the functions of the end clamp 6 is to take the first clamping. The 660c can be moved synchronously with the first gripper 66A and the second squeegee 66 〇t>. This can reduce the workpiece 250 still with one of the ejector (eg, the third gripper 66) during the release process. c) the possibility of attachment, and can increase the accuracy of the position of the workpiece after release. See back to Figure 26, the end gripper 64〇a Containing a hub 33 = 644 connects the end gripper (10) 3 to the arm Μ. Each of the troughs 644 is in addition to the center of the end gripper 64〇3 and the arm 3丨6. A place allows the electronics to "trip" between the robot arm 316 and the gripper 6 without regard to the relative rotation of the two components. At the end, the wafer 250 is transferred to the loading position. 3〇6, which is the inside of the wafer cassette, the box, or the carrier 314. The loading window 3〇m: machine:: 3: will pick up the wafer 25 at the loading station 306 and wafer Move to the inside of the processor. The wafer can be moved to a pre-aligner or other cavity for the first processing step. The second and second circles 250 are processed in the processor 30. During this process, the Tasaki 316 can return to the original loading position. 3 Repeat the loading step. The other steps are: Load the second processor 3. When the process is completed, each wafer (10) = moved by the robot arm 316 To one of the rotary rinsing and drying machines 32. The rotary rinsing and drying machine 32 shown in Fig. 1 has lifting/rotating parts and the like for lifting and turning. The head of the rotary rinse dryer is used to load/load: a rotating rotary dryer (or other additional processing chambers, = metering chamber: tempering chamber, etc.) If there is no lifting/rotating mechanism, it will be used. After each wafer is rinsed and dried, the arm will move back to the loading position 3 〇6, and the general wafer will be used there. Retrieve the original crystal box or put it into a different crystal box. As a separate unit or inside a processing system, the processor % itself can also be rinsed and dried. In a selective exhaust After the step, the rinsing liquid (such as deionized water) will flow through the chambers 146 and 24 〇 to order the rinsing, and the wafer and the cavity are in a vertical position. After the rinsing 34 1362686 liquid will be slowly drained for a slow extraction and dry form. In the eve of the application, even if some of the rinsing droplets remain on the wafer during the process, this step still allows the wafer to have sufficient dryness to be processed or processed. In other drying steps, the surface tension/meniscus can be used after the wafer has been rinsed. In this drying process, a drying solution (e.g., isopropanol) is supplied to the process chamber.

Referring to Figure 34, system 300 can be selectively configured with an isolation chamber rinsing system 190. If such a system is used, the rinsing system 19 can contain a lotion passage or a row of nozzle tips 192. When the processor is rotated to its upright position, the channel or nozzle tip 192 is aligned with and adjacent to the loading slot 62 of the processor 3''''''' Similarly, an isolated drain collection tube 194 can be disposed in the system lion, which will be adjacent and aligned with the isolation drain 58 when the processor 30 is in the vertical position. A suitable gap is left between the processor 3 and the channel 192 and the collection tube 194 to allow the processor 3 to freely rotate between its vertical and horizontal positions. The isolation drain hole 58 can be connected to a drain/exhaust pipe, such as the collection f 194, by an elastic tube 334 (which can be used in conjunction with the vertical and horizontal movement of the processor 3) to ensure that there is no liquid or Gas leaks from the processor 30 into the system 3 〇〇. The isolation chamber 60 shown in Figures 5, 6, and 14 can be used in the following manner (5) to wash the processor 3G to a vertical position; the rinsing liquid is loaded from the nozzle array 192, +, +, & w is injected into processor 30 on day 56. The rinsing liquid is discharged through the isolation drain 58 to the outside of the processor 30 and into the collection tube 194. The collection tube 194 is connected to a -& bucket, a θ-^^ system or a sputum drain. Isolation cavity lubrication system 19 0, during the process period, between the wafer and wafer processing steps, 35

Once St has processed a sufficient number of wafers, it can be used to periodically clean the compartments. 1^ Chi Run Washing Line 19G can also be used in the _ (four) in the electrolytic error situation. Under this condition, the isolation chamber (9) will be flushed to reduce the leakage of electrolyte (liquid or gas) into the system 300 and 篁. The processor can also be used for the private use without any isolation chamber 60. As long as no current is supplied to the electrode, or the electrode is omitted entirely (for example, replacing the electrode rings 106 and 204 with a fixed and continuous central portion 2 plate), the processor 30 can also be used as a process chamber instead of electrification. Learn the process chamber. With this design, we can replace the original electrolyte with different chemical process liquids.

In addition, in many existing wafer processing equipment, the wafer is usually loaded/loaded in a horizontal position. The processor 30 or the automation system 3 can be changed to an X vertical orientation loading/unloading. Wafer. The words (including the scope of patent application), such as "upper and lower, upper and lower", are used for explanation only, and not one element must be placed above or below another element. The processor 30 can actually be operated upside down. In addition to the polysilicon described above, processor 30 can be used to process other similar materials, including gallium compounds. The "vertical" and "horizontal" 5 § J referred to herein are included in the vertical or horizontal range of 5, 10 or 15 degrees, respectively. The processor 30 can also be used in a fixed position. For example, processor 30 can be used without any rotating motor 38 and cutting plate 33〇. In this case, the processor 3〇 is supported to be fixed in a horizontal position, or in a vertical position, or at any angular position between vertical and horizontal. 36 1362686 Many variations and substitutions of the invention are possible without departing from the spirit and scope of the invention. The invention is limited only by the scope of the application and the equivalents thereof. BRIEF DESCRIPTION OF THE DRAWINGS In the drawings, the same reference numerals refer to the same parts: Figure 1 is a top perspective and front perspective view of a porous crucible processor. Fig. 2 is a bottom perspective view and a back perspective view of the processor shown in Fig. 1. The joint plate is omitted here for convenience of explanation. Figure 1 is a perspective view of the top and front explosion of the processor shown in Figures 1 and 2. • Figure 4 is a plan view of the processor shown in Figures 1 to 3. Figure 5 is a front view of the tangential line taken along line 5-5 in Figure 4. Figure 6 is a cross-sectional view taken as a tangent to the line 6_6 in Figure 4. Figure 7 is a front view of the tangential line in Figure 4 with line 7_7. Figure 8 is a cross-sectional view taken along line 8_8 of Figure 4 as a tangent line. #图9 is a cross-sectional view taken as a tangent line 9-9 in Figure 4 and showing the head of the machine in Figures 1 to 8. Figure 10 is a top perspective and front perspective view of the head portion shown in Figure 9, with the top cover portion removed. Figure 11 is a top perspective and front perspective view of the base portion shown in Figures 1 through 8, and Figure 10 - shows the base portion separated from the head portion. Figure 12 is a plan view of the base portion shown in Figure 11. Figure 13 is a cross-sectional view taken along line 13-13 of Figure 12 as a tangent. Figure 14 is a cross-sectional view of the line 7_7 in Figure 4 as a tangent line and shows the source 37 1362686. The machine is in a closed eight + s state as the processor in the second::: processing state. Figure 5 to Figure 8 shows m,, "The opening state when the Japanese yen is carried out. Figure 15 is the picture in Figure 5. - The figure is enlarged." For the figure twelve Dogan ^ perspective. Figure 17 of the lower seal holder shown in Figure 17 is a perspective view of Fig. 14 Ε] | The eight-to-fifth representation of the upper seal holder = eight is a cross-sectional view taken as a tangent to the line 18_18 in Fig. 17. θ Nine is the top and front perspective view of the multi-cut processor. Figure 19 shows the top and 1 perspective view of the two processors in the process system. The processor on the right is in the state of manned/loaded. The processor on the left is in the process state. Figure 2 is the base and the yang shown in Figure 19; U ^ pole combination and lighting group Figure: Ten: is a cross-sectional view of the line assisted by the line in Figure 21. Eight == ten ^ is the perspective view of the anode combination and the luminaire group θ shown in Fig. 19 and Fig. 21. The anode combination is supported by the test stand. Figure 24 is a perspective view of the combination of the anode combination and the lamp shown in Figure XX. Figure 25 is a cross-sectional view of the line 25-25 taken in Figure 19. Figure 26 is a front perspective view of the combination of lamps shown in Figures 23 to 25. Figure 27 is a perspective view of the front and rear of the lamp house shown in Figure 26. 38 Fig. _l and Fig. 2+8 are sectional views of Fig. 27 with line 28-28 as the cut line. Figure: Nine is a cross-sectional view of the line 23_29 taken as a section line. fFig. Twenty-three center line 29_29 turn 30 degrees angle for the line cut. Fig. Fig. Fig. Fig. Fig. is a sectional view of another embodiment. Eleven is a perspective view of an automated process system. Twelve is the top view of the system shown in Figure 32. The fourth is the front view of the system shown in Figure 22. Fifteen is a side view of the system shown in Figure 32. • The end of the system is used in the system view as shown in Figure 22 to Figure 35. The top cover is removed for illustration. Three: Six top view of the end slider shown.囫-18 is the figure thirty-seventh line 38_3 [main component symbol description] wearing a face map. 5 4 Frame axis inspection 5 6 Loading slot 58 Exhaust pipe 6 0 Barrier chamber 62 Frame 7 〇 Top cover 71 Window 72 Cam ring 7 3 Window 7 4 Piston 3 0 Processor 32 Base 34 Head 3 6 Blocking cavity seal 3 8 Rotary motor 39 Gear drive reducer 40 Flange bearing 42 Base plate 4 8 Fastener 5 0 Cam shank 39 Piston nut 118 Vent hole Piston cap 120 Telescopic valve nut 122 Fastener piston plate 124 Fastener cylinder 126 Diffuser Flange 128 seal cylindrical ring 130 ejector piston ring 132 upper seal ring piston ring seal 140 cavity piston ring seal 142 inlet piston seal 146 process chamber electrode lead 148 outlet first - electrode 1 50 connector Plate 152 mobile electrode combination cap screw 1 53 connecting wire groove 154 joint third seal 155 joint fourth seal 156 upper cylinder π upper electrode ring 158 lower cylinder π second seal 160 joint first seal 162 sensing Nut 1 63 fiber winding third seal 164 sensor vent 165 fiber optic cable 40 flag board 222 connector splint 224 imported optical liquid ik detector 226 outlet nut clamp 228 joint frame seal 230 joint connector 232 joint connector 234 Electrode wire connector plate 240 process chamber aligning column 250 wafer rinsing system 252 rinsing nozzle nozzle head 300 system collecting tube 302 housing base ring 304 controller sealing seat 306 loading position base electrode ring 308 loading window pedestal base electrode Cover 3 10 inlet electrode 3 12 aligner seal 3 14 carrier base seal fastener 3 16 manipulator wafer guide 3 18 wall guide post 320 rotary rinsing dryer seal 322 rotary rinsing dryer shoulder 330 carrier plate connector 332 axle seat plate 41 elastic tube 550 crystal Round « «/ 迗 560 channel part processor design 562 seal actuator 563 screw light channel electrode early 70 564 anode light channel electrode XJO —* early 565 ring processor 566 window P base 567 seal head 568 Window clamp seal 569 Screw rotation motor 570 Luminaire assembly base plate 57 1 Luminaire housing anode assembly 572 Housing cover Zhaoguang module 573 Collector gasket barrier cavity 574 Luminaire electrode 5 74c: Central fixture base ring 575 Lamp holder seal holder 576 Liquid Coolant Joint Seal 577 Liquid Coolant Joint Lamp Combination 578 Joint 579 Cooling Channel Entry 580 Reflector Combination Outlet 58 1 Top Cover Process Chamber 582 Reflector 42 1362686 5 8 3 Window 5 8 4 Sealing Element 5 8 5 Lens 5 8 6 Disperser 5 8 7 Retaining ring 5 8 8 Screw 5 9 0 Coolant Connector 5 9 1 coolant connector 5 9 2 connector 5 9 3 inner surface 6 3 6 a drive rod 6 3 6 b blade drive rod 6 3 7 seal 6 3 8 yoke bracket 6 3 9 yoke seal 640a End gripper 641 Motor 642 Blade 6 44 Hub combination 645, Housing 6 4 8 Blade bracket 6 4 9 Light combination 650 conveyor 6 5 1 Worm 652 Worm gear 6 5 3 b Yoke drive linkage 660a First gripper 660b second gripper 660c third gripper 6 6 3 roller 664a guide ramp 664b guide ramp 6 6 5 junction 6 6 6 needle roller 43

Claims (1)

1362686 ' I 2011/10/13 no underline replacement page + ' f material (4) ® : 1. A processor comprising: - two ~ - a housing; a first seal located in the housing; a first electrode, located in the housing, connected to the first seal; a second seal located in the housing relative to the first seal; a second electrode, and the second seal Connected, the second electrode has an opposite polarity to the first electrode; and a motor coupled to the housing for rotating the housing. 2. The processor of claim 1, wherein the first seal and the first electrode are placed on the wafer between the first seal and the second seal and the wafer The first surface forms a first processing chamber, and the second sealing member and the second electrode form a second processing chamber with the second surface of the wafer when the second sealing member moves into contact with the wafer. 3. The processor of claim 1, wherein the housing comprises a head that is coupled to a base, the second electrode and the second seal are located within the head, and the first A seal and the first electrode are located within the base. 44 1362686 20im〇/13 no underline replacement page 4. The processor head according to item 3 of the patent application is attached to the base by a plurality of cam assemblies. 5. The processor according to claim 3, wherein the second seal forms a movement with the second electrode, and the head further includes an actuator, and the electrode assembly is combined. 6. The processor actuator of claim 5, wherein the actuator comprises a hydraulic cylinder. , where the J fixer, where the electrode group ί the move, where the The processor of claim 1, wherein the first seal member, the first seal member, and the first electrode and the second electrode are located inside. Further, the second sealing cavity is included. 8. The processing chamber of the seventh aspect of the patent application has an inlet, and an outlet on one side of the housing is separated from the inlet. The processor housing of claim 7, comprising a base and a head seal having a top cover and the second electrode formed in the head, wherein The second mobile type 45 1362686 • · 2011/10/13 has no scribe line replacement page electrode combination, and further includes a telescopic valve, the first end of which is connected to the top cover and the second end is connected to the mobile type The electrode is combined. 10. The processor of claim 1, wherein the housing comprises a base and a head, the second seal and the second electrode are located in the head, and the first seal and the first seal The first electrode is located in the base, and the base further comprises a plurality of positioning pins distributed on the outer circumference of the first seal, and the upper portion of the positioning pin is substantially placed inside one of the wells in the head To keep the head aligned with the base. 11. The processor of claim 2, further comprising a first electrolyte inlet and a second electrolyte inlet, wherein the outlets are respectively located in the first process chamber and the second process chamber, and a diffusion The device is disposed at least on one of the inlets or outlets. The processor of claim 1, wherein the first piece further comprises at least one top piece. 13. A processor comprising: a process chamber comprising a mobile electrode assembly having a first seal, a first electrode, and a second seal spaced apart from a second electrode; and a barrier cavity, The process chamber is included, and one inlet port and one drain 46 1362686 2011/10/13 no scribe line replacement page/exhaust port is connected to the barrier chamber. Further, the package and the position axis are shifted by a first one, and the second one of the two points is the same, and the electrode is the same. The processor according to claim 13 of the patent application includes a motor coupled to the The barrier cavity is configured to rotate a processing chamber inside the barrier cavity to its loading and processing position. 15. An electrochemical process apparatus comprising: a head, an electrode assembly along which a first movement is performed, the electrode assembly comprising a first electrode, and a first member and the first electrode being centered, the first An element is spaced apart from the first electrode by a distance D along the axis, and the electrode is combined with a first process chamber of the first seal and the first electrode; a first fluid inlet and a first fluid outlet, The bit electrode assembly is connected to the first process chamber; a base includes: a second electrode holder, at least a second electrode is supported by the second electrode holder, and a first member is located on the second electrode holder and And the second electric center, the first seal is concentric with the second seal; the second electrode holder has a second process chamber between the second seal and the second; a second fluid inlet and a a second fluid outlet, located on the second electrode holder and connected to the second process chamber; 47 1362686 • » 2011/10/13 no line replacement page a holder, the machine is first connected to the base; Electrode combination mover, received the head of the machine The electrode assembly on the portion moves the electrode assembly along the first axis and seals the first seal and the second seal to opposite sides of a crystal. 16. A processor comprising: a workpiece support; a first process chamber located on a first side of the workpiece support; a second process chamber located on a second side of the workpiece support, and the first The process liquid supply device supplies the process liquid to the first process chamber and the second process chamber; the sealing device isolates the first process chamber seal from the second process chamber; the current device sequentially aligns the current Leading the process liquid in the first process chamber, the workpiece, and the process liquid in the second process chamber; and means for using the first process chamber and the second process chamber in the loading position and the process position Intercropping. 17. The processor of claim 16, wherein the workpiece support comprises a piece. 48 1362686 2011/10/13 Unlined Replacement Page 18. An electrochemical process system comprising: one or more processors, each processor comprising: a housing; a first seal located in the housing a first electrode located in the housing and connected to the first seal; a second seal located in the housing and moving with the first seal; a second electrode connected to the a second seal; and a motor coupled to the housing for rotating the housing; a robot arm for moving the workpiece to load or load each of the processing machines; and a controller for connecting and controlling the processor and The operation of the robot arm. 19. A wafer processing method comprising: placing a wafer into a process chamber, the first side of the wafer being in contact with a first seal, and the wafer being in a horizontal orientation; moving the second seal Contacting the second side of the wafer; contacting the first side and the second side of the wafer with an electrolyte; and conducting a current through the electrolyte and the wafer. 20. The wafer processing unit 49 1362686 I 2011/10/13 non-scribe line replacement page method according to claim 19, further comprising the step of aligning the wafer with the first seal, the method of which is To contact the edge of the wafer with the alignment pin near the first seal. 21. The wafer processing method of claim 19, further comprising the step of: removing the second seal from the wafer after the wafer process is completed, the wafer being placed on the wafer The location on the piece. 22. The wafer processing method of claim 19, further comprising the step of oscillating the processor. 23. The wafer processing method of claim 19, further comprising the steps of: arranging a barrier cavity around the process chamber and injecting a liquid into the barrier chamber, the liquid and the process chamber being the first The seal and the second seal are separated. 24. A wafer processing machine comprising: a housing; a first seal located in the housing; a first electrode located in the housing and coupled to the first seal, the first electrode The ratio of diameter to thickness is between 4 -1 0 and 1; 50 1362686 » (2011/10/13 no scribe replacement page - second seal, located in the housing to move with the first seal And a second electrode connected to the second seal. 25. A processor comprising: a housing; a first seal located in the housing; a first electrode located in the housing a second seal located in the housing and moving with the first seal; a second electrode; and one or more lamps configured to pass light through a central opening region of the first electrode The processor of claim 25, wherein the processor of claim 25 further includes a motor coupled to the housing to rotate the housing. The processor of claim 25, wherein the housing comprises a head that is coupled to the base, the The second electrode and the second seal are located in the head, and the first electrode and the first seal are connected to the base. 28. The processor according to claim 25, wherein 51 1362686 2011/ The first electrode is annular. The processor of claim 27, wherein the second seal and the second electrode form a mobile electrode assembly, the machine The first embodiment further includes an actuator coupled to the mobile electrode assembly. The processor of claim 29, further comprising a lens and a diffuser between the luminaire and the first seal The processor of claim 28, wherein the first electrode comprises an angled inner surface, and the processor of claim 28, wherein the first electrode The processing device of claim 25, wherein the housing includes a base and a head, the second seal and the same The second electrode is located in the head of the machine The first member and the first electrode are located in the base; the processor further comprises a plurality of positioning pins located around the circumference of the first seal in the base, and the upper portion of each of the positioning pins is located in the head A 52 1362686 2011/10/13 no underline replacement page in the wellbore to maintain alignment between the head and the base. 34. A porous crucible processor comprising: a process chamber having a first seal The device is spaced apart from a first electrode, and a second member is spaced apart from a second electrode, the second member and the second electrode are located on a movable electrode assembly; a blocking cavity is disposed in the process chamber, An inlet and a drain/exhaust port open into the barrier cavity; and a light source configured to project light onto the wafer being pulled by the first seal. 35. The porous crucible processor of claim 34, further comprising a motor coupled to the barrier chamber to transfer the barrier chamber and the process chamber located in the barrier chamber to a loading position and a process position. 36. The porous tantalum processing machine of claim 34, wherein a spacing between the first electrode and the first seal is 150% greater than a spacing between the second electrode and the second seal -400%. 37. A wafer processing apparatus comprising: a head, comprising a mobile electrode assembly, the mobile power 53 1362686 • I 2011/10/13 no line replacement page pole combination comprising a head electrode and a The head seal of the first electrode of the machine is concentric, the first seal of the machine and the first electrode of the machine and the second surface of a wafer form a machine head cavity; a head liquid inlet and a head liquid outlet, located at The movable electrode assembly is connected to the machine head cavity; a base includes a base seal; a base electrode is supported on the base and is centered with the base seal; ^ a window, located in the On the base, the base, the base seal, the base electrode and the window together form a base processing chamber with the first surface of the wafer; a base liquid inlet and a base liquid outlet are located in the base; Projected through the window on the first side of the wafer. 38. The wafer processing apparatus of claim 37, wherein the base electrode includes a central open area and the light source projects light through the central open area of the base electrode. 39. A processor, comprising: a workpiece support; a first process chamber located on a first side of the workpiece support 54 1362686 2011/10/13 without a scribe line replacement page; a second process chamber, Located above the second surface of the workpiece support and opposite to the first surface; the processing liquid supply device supplies the processing liquid into the first processing chamber and the second processing chamber; and the sealing device, the first processing chamber Isolating from the second process chamber, the current device sequentially conducts current through the processing liquid in the first processing chamber, the workpiece, and the processing liquid in the second processing chamber; and the illumination device illuminates the workpiece. 40. The processor of claim 39, further comprising a device for rotating the process chamber between the loading position and the process position. 41. The processor of claim 39, wherein the workpiece holder comprises a piece. 42. An electrochemical processing process system comprising: one or more processors, each processor basically comprising: a housing; a first seal located in the housing; a first electrode located In the housing; 55 1362686 α » 2011/10/13 no scribe replacement page - a second seal located in the housing and movable with the first seal; a second electrode, and the second The cover moves together; a light source that illuminates the workpiece fixed between the first seal and the second seal; and a motor coupled to the housing for axially rotating the housing; An arm movable to carry the workpiece into and out of each of the φ machine; and a controller coupled to the processor and the arm and controlling the operation of the processor and the arm. 43. A method of wafer processing, comprising: placing a wafer into a process chamber, the first side of the wafer is in contact with a first seal, and the wafer is substantially in a horizontal orientation; The second member is brought into contact with the second side of the wafer; the wafer is moved to a non-horizontal orientation; the first side and the second side of the wafer are brought into contact with the electrolyte; The electrolyte and the wafer are illuminated on the first side of the wafer. 44. The wafer processing party according to claim 43, wherein the method of aligning the wafer with the first seal is performed by the method of aligning the wafer with the first seal 56 1362686 2011/10/13 The edge of the wafer is in contact with a registration pin adjacent the first seal. 45. The wafer processing method of claim 43, further comprising the steps of: removing the second seal from the wafer after the wafer process is completed, the wafer being placed on the wafer The position on the first piece. 46. The wafer processing method of claim 43, further comprising the step of oscillating the processor. 47. The wafer processing method of claim 43, further comprising the steps of: arranging a barrier cavity around the process chamber and injecting a liquid into the barrier chamber, the liquid and the process chamber being the first seal The pieces and the second piece are separated. 48. A wafer processing machine comprising: a housing; a first sealing member; a first electrode coupled to the first sealing member; and a second sealing member movable relative to the first sealing member; a second electrode coupled to the second seal, the second electrode 57 1362686 2011/io/n non-scribe line replacement page having opposite polarity to the first electrode; and one or more liquid outlets configured to transport liquid through a central open area on the first electrode to a workpiece between the first seal and the second seal. 49. The wafer handler of claim 48, wherein the first seal is fixed at a position relative to the first electrode. 50. The wafer handler of claim 49, wherein the second seal is fixed at a position relative to the second electrode. 51. The wafer handler of claim 48, wherein the first electrode is annular. 52. A processor, comprising: a first seal; a first electrode having a first central opening region; a second seal movable with the first seal; a second electrode having a a second central opening region; one or more first light fixtures configured to illuminate light through the first central opening region on the first electrode to the first seal; and one or more second light fixtures configured to Light passes through the second electric 58 1362686 -* 丨i. 2011/10/13 without the scribe line replacing the second central opening area on the page pole to the second seal. 53. A processor comprising: a first electrode; a first sealing element adapted to seal a first surface of a workpiece, the first sealing element being located between the first electrode and a first surface of the workpiece a second electrode; a second sealing member modified to seal a second surface of the workpiece, the second sealing member being located between the second electrode and the first surface of the workpiece; one or more second A light fixture configured to illuminate light through the central open area on the first electrode to the first sealing element. 54. A wafer processing method comprising: Placing a wafer into a process chamber, the first side of the wafer is in contact with a first seal, and the wafer is substantially in a horizontal orientation; moving a second seal to the wafer Two-sided contact; contacting the first surface and the second surface of the wafer with an electrolyte; conducting a current through the electrolyte, and illuminating the first surface and the second surface of the wafer. 59 1362686 2011/4/8 XI. 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