六、發明說明： 【發明所屬之技術領域】 本案係一種應用於晶只料壯L π 、日曰片封裝的散熱月製造技Sixth, the invention description: [Technical field to which the invention belongs] This case is a heat-dissipating monthly manufacturing technique applied to the crystal material only L π and the niobium sheet package.
丁’尤指將二種不同今♦暂沾A .s J r生質的金屬材料分開製造，最 再嵌合而成為一體的散熱片製造方法。 【先前技術】 按’目前用於晶片封梦夕冉 乃釘裒之政熱片’以球閘陣列 封震（Ball Grid Arrav，ΚΓΑ、λα u ay BGA)的晶片為例，該散 :片係經過沖壓成型而製成，於該散熱片的中央部 昧成凸4 (.其大多為圓形），供以在進行晶片封裝 的’將該晶片上的積體電路，完全包覆於該散熱片 m邛内面後，並使該積體電路與該散熱片緊密接 人復利用—封襄材料（陶竞或塑膠）將該晶片完 二封裝於該散熱片内部，最後留下該凸部裸露於該 裝材料外#’而使該晶片之積體電路在使用時所 的…量會傳導至該散熱片上，並由裸露的凸 部將熱量驅散至大氣中。 ^中華民國新型專利第M3 23647號「用於晶片 封裝之勃^ y &Ding's especially refers to the manufacturing method of the heat sink which is manufactured separately from the two kinds of metal materials which are temporarily coated with A.s J r raw materials. [Prior Art] According to the wafer currently used for wafer sealing, the Grid Arrav (ΚΓΑ, λα u ay BGA), the scatter: film It is formed by press forming, and is formed in a convex portion 4 (which is mostly circular) in the central portion of the heat sink, and is completely covered by the integrated circuit on the wafer for performing chip packaging. After the inner surface of the sheet is folded, the integrated circuit is closely connected with the heat sink, and the sealing material (Tao Jing or plastic) is used to encapsulate the wafer inside the heat sink, and finally the convex portion is exposed. The amount of the integrated circuit of the wafer is transferred to the heat sink and the heat is dissipated to the atmosphere by the exposed convex portion. ^The Republic of China new patent No. M3 23647 "for wafer packaging y &
…丰成品」為例，於該散熱片的半成品 包含"一柜架1S - TT Μ早疋及一散熱片單元，該框架單元具有 複數個相鄰4> 接之框架’且每一框架圍繞界定出一容 i空間，以；8 ^ 及—自該框架向容置空間延伸突出之連 接段’該散埶t! K «丨a , 双熟片早兀則包括複數個設於該容置空間 3 内的散熱片， 該框架單元可 陽極處理或氧 率。 該每—散熱片係與連接段連接，使得 人承栽多個散熱片’而進行電鍍、 化處理等表面處理，大幅提高製程效For example, in the semi-finished product of the heat sink, a semi-finished product of the heat sink includes a shelf 1S-TT and a heat sink unit, and the frame unit has a plurality of adjacent 4> frames and each frame surrounds Defining a space i to 8 ^ and - the connecting section extending from the frame to the accommodating space 'the divergence t! K «丨a, the double-cooked piece early includes a plurality of The heat sink in space 3, the frame unit can be anodized or oxygen. Each of the heat sinks is connected to the connecting section, so that a plurality of heat sinks are implanted and subjected to surface treatment such as electroplating and chemical treatment, thereby greatly improving the process efficiency.
沖匍’S習知散熱片係由單-金屬材料製成，經過 4面處理及下料沖切後’而完成-晶片封骏 的散熱片。-般市面上常用的散熱材料如：鋁金 屬或銅金屬等，以屬具有阻抗高、散熱性不佳的 特杜’而銅金屬具有阻抗低、散熱性佳的特點，雖 d採用王鋼金屬製成該散熱片，可解決阻抗及散熱 1題但疋鋼金屬的價格昂貴，如採用銅金屬則 不敷成本，若採全鋁金屬製成，則有阻抗高、散熱 14不佳等問題；是故，一般採用銅鋁混合的散熱片 以兼顧阻抗及散熱性能，其係將銅金屬黏貼的方式 固。又於鋁金屬製成的散熱片上，再經過電鍵處理， 因此，所以會發生銅金屬脫落或剝離等問題，其製 程中的高不良率，仍是業界亟欲解決的一大問題。 有鏗於此，本發明人係設計一種全新的用於晶 片封裝之散熱片製造方法’可將二種不同特性的金 屬結合為一，藉連續批次的製造流程分開製造出支 架及導電塊，再將各自完成的半成品嵌合成一體， 以加快生產效率，並可避免二者結合後的脫落或剝 離等問題，大大地提高了成品的品質。 4 1362585 丨發明内容】 本發明之一目的，旨在提供一種用於晶片封裝 的散熱片製造方法’俾能快速完成一複合式散熱 片’其不但兼具導電及電性絕緣的特性，且其封事 後具有阻抗低、散熱性能佳等優點。 本發明之另一目的，旨在提供一種用於晶片封 裝的散熱片製造方法，俾能降低複合式散熱片的製 造及使用成本’並兼顧成品的品質。 為達上述目的，本發明之用.於晶片封裝之散熱 片製造方法，其包括下列步驟：一支架成型步驟， 係將-第-金屬板材，依序經過沖t、絕緣處理及 下料沖切後，以形成一中央具有一穿孔且無導電性 的支架；-導電塊成型步驟，再將一阻抗低、散熱 性佳的第二金屬板材經過沖製、防氧化處理及下料 沖切後’形成—對應該穿孔形狀的導電塊；以及一 嵌合步驟，將該導電塊鑲嵌於該支架的穿孔内，而 完成-兼具導電、電性絕緣等特性的晶片散熱片。 於一實施例中，却组 /V E?, I第一金屬板材係使用阻抗 南：散熱性不佳的鋁金屬而製成，該第二金屬板材 係裇用阻k低、散熱性佳的銅金屬而製成，本發明 係使用二種不同；姻· ^ + 材枓，以降低材料的成本；再者， S亥第一金屬板之表而# 表面係經過如：.電鍍或是塗佈絕緣 材料的絕緣處理，以拟 形成一具有絕緣層的支架，而 “-金屬板之表面係經過黑化製程，形成表面且 5 1362585 保該支架完成後的電 導電性與耐久性，且 熱性能佳等優點。另 導電塊成型步驟均為 實施例中’該支架成 步進行，以縮短製造 與該導電塊進行嵌合 ’以及提高成品的品 有一層抗氧化的導電塊，而確 性絕緣’以及導電塊使用時的 與晶片封裝後具有阻抗低、散 外’由於該支架成型步驟與該 連續批次處理，於本發明之一 型步驟與導電塊成型步驟係同 _間，最後再將完成的該支架 步驟’大幅提昇了製造的效率 質。 【實施方式】 為使貴審查委員能清楚了解本發明之内容， 以下列說明搭配圖式，敬請參閱。 請參閱第1〜7圖所示，本”之用於晶片封 之散熱片製造方法，其包括下列步驟. 库二支架成型” 10，係將一第―金屬板材， 序厶過冲製1丨、絕緣處理丨2 來占一 士 久下枓沖切13後， /成中央具有一穿孔42且盔導φ a .峰咕 .，.、導電性的支架40 者’该第-金屬板材係選用阻抗 的鋁金屬，复具右俨玫彻 且 蚁…、性不 要大…二 得等優點，作為 罟大面積的支架4〇最為適當· ⑼需要具有絕緣效果，本發明係/如由：該支 塗佈的方式，—金屬板材或 材料，，再如第2、3圖所干面:：―層絕 ，本發明支架 1362585 之中央部設有一凸部41，使該支架40 —面凸出， 且於該凸部41的中心至少設有—穿孔42，該支架. 40表面更佈設有一絕緣層43’而確彳呆該支架4〇完 成後的電性絕緣。 一導電塊成型步驟20,再將一阻抗低、散熱性 佳的第一金屬板材經過沖製21、防氧化處理2 2及 下料沖切23後，形成一對應該穿孔乜形狀的導電 塊50 ;再如第4、5圖所示，該第二金屬板件係採 用阻抗低、散熱性佳的銅金屬，係以塗佈方式於其 表面設有一層抗氧化材料，或是以黑化製程的方 式於忒導電塊5 0的表面形成抗氧化的氧化金屬 層；因此，可產生出一種具有抗氧化，且導電性、 散熱性能都好的導.電& 5〇,該導電塊.50係呈對應 ::支架40穿孔42形狀之立體結構體，且其表面佈 X有層氧化保護層51。於本發明之較佳實施例 :上述—步驟的沖製11、21、絕緣處理1 2、 二化處理22 ’以及下料沖切13 ' 23均為連續批 次處理的丁、+m 法’因此’可同步進行此二步驟，以減 料的㈣，而可增加.生產效率。 嵌合步驟30 ’下料沖切完畢的導電塊5〇 (單 穿和2知於下料沖切完畢的該支架40 (單片）之 電、電!·生Γ ’而使二者合而為一’以完成-兼具導 所示：緣等特性的散熱片60。再如第6、7圖 〆散熱片60係由該支架4〇與該導電塊5〇以 嵌 膠 片 而 將 已 式 出 範 後 合方式作結合，不僅不需要如習知散熱片需要上 用的黏膠，而有降低製造成本的功效，且該散熱 6〇經長時間或於高溫情況下使用也不會損壞，因 能延長使用壽命，成品的品質也大幅提昇。 如上所述，如第1〜7圖所示，本發明在實施時， 具有下列優點： 1. 本發明係提供了 一種晶片封裝用之散熱片製 造方法，以將二不同性質的金屬板材分別製 成支架40及導電塊50，並將該支架40及該 導電塊50敌合成一完整的散熱片60,不但能 兼顧導電及電性絕緣等特點，而有阻抗低、 散熱性佳等優點，還可降低製造及使用成本。 2. 再者，由於本發明之散熱片60係以嵌合方式 凡成，不但使用壽命得以延長，且做出來的 成品品質更佳。 唯，以上所述者，僅為本發明之較佳實施例而 並非用以限定本發明實施之範圍，其他轉變方 f皆在本案的料之中；故此等熟習此技藝所作 等效或輕易的變化者，纟不脫離本發明之精神與 圍下所作之均等變化與修飾’皆應涵蓋於本發明 專利範圍内。 :上所述，本發明之用於晶片封裝之散熱片製 法係具有專利之發明性’及對產業的利用價 申β人爰依專利法之規定，向鈞局提起發明 1362585 【圖式簡單說明】 第1圖，為本發明較佳實施例的步驟流程圖。 第2圖’為本發明較佳實施例支架的立體外觀圖。 第3圖，為本發明較佳實施例支架的結構剖視圖。 第4圖，為本發明較佳實施例導電塊的立體外觀圖。 第5圖，為本發明較佳實施例導電塊的結構剖視圖 第6圖.為本發明較佳實施例組合後的立體外觀圖。 第圖為本發明較佳貫施例組合後的結構剖視圖。 【主要元件符號說明】 10 支架成型步驟 11 沖製 12 絕緣處理 13 下料沖切 20 導電塊成型步驟 21 沖製 22 抗氧化處理 23 下料沖切 30 嵌合步驟 40 支架 41 凸部 42 穿孔 43 絕緣層 50 導電塊 10 1362585 51 抗氧化保護層 60 散熱片The 匍's conventional heat sink is made of a single-metal material, which is finished after four-side processing and blanking. - Commonly used heat-dissipating materials on the market such as: aluminum metal or copper metal, etc., which are characterized by high impedance and poor heat dissipation, and copper metal has the characteristics of low impedance and good heat dissipation, although d is made of Wanggang metal. The heat sink can be used to solve the problem of impedance and heat dissipation. However, the price of the steel is high. For example, the use of copper metal does not cost. If it is made of all-aluminum metal, there are problems such as high impedance and poor heat dissipation 14; Therefore, a copper-aluminum hybrid heat sink is generally used to balance the impedance and heat dissipation performance, and the copper metal is adhered in a solid manner. On the heat sink made of aluminum metal, it is subjected to electric key treatment. Therefore, problems such as peeling or peeling of copper metal occur, and the high defect rate in the process is still a major problem that the industry is eager to solve. In view of this, the inventors have devised a new method for manufacturing a heat sink for chip packaging, which can combine two different characteristics of metal into one, and separately manufacture a bracket and a conductive block by a continuous batch manufacturing process. Then, the finished semi-finished products are integrated into one body to accelerate the production efficiency, and the problems of falling off or peeling after the combination of the two can be avoided, and the quality of the finished product is greatly improved. 4 1362585 SUMMARY OF THE INVENTION An object of the present invention is to provide a heat sink manufacturing method for a chip package, which can quickly complete a composite heat sink, which not only has the characteristics of electrical and electrical insulation, but also After sealing, it has the advantages of low impedance and good heat dissipation performance. Another object of the present invention is to provide a heat sink manufacturing method for wafer packaging which can reduce the manufacturing and use cost of the composite heat sink and take into consideration the quality of the finished product. In order to achieve the above object, the method for manufacturing a heat sink for a chip package comprises the following steps: a step of forming a bracket, the step-metal sheet, followed by punching, insulating treatment and blanking. Thereafter, a bracket having a perforation and no conductivity is formed in the center; a conductive block forming step, and then a second metal plate having low impedance and good heat dissipation is subjected to punching, oxidation prevention, and blanking after cutting. Forming a conductive block corresponding to the shape of the through hole; and a fitting step of inserting the conductive block into the through hole of the holder to complete a wafer heat sink having both electrical and electrical insulation properties. In one embodiment, the first metal sheet is made of aluminum alloy with low impedance and low heat dissipation. The second metal sheet is made of copper with low resistance and good heat dissipation. Made of metal, the present invention uses two different types; the marriage material is used to reduce the cost of the material; further, the surface of the first metal plate of the S-H is the surface of the surface is: plating or coating Insulation treatment of the insulating material to form a support with an insulating layer, and "- the surface of the metal plate is subjected to a blackening process to form a surface and 5 1362585 to ensure electrical conductivity and durability after completion of the support, and thermal performance The advantages of the other conductive block forming steps are all in the embodiment, the bracket is stepped to shorten the manufacturing of the conductive block, and the finished product has a layer of anti-oxidation conductive block, and the positive insulation is When the conductive block is used, it has low impedance and is out of the package after the package is packaged. Due to the stent forming step and the continuous batch processing, one step of the present invention is the same as the conductive block forming step, and finally completed. The branch The racking step greatly improves the efficiency of the manufacturing. [Embodiment] In order to enable the reviewing committee to clearly understand the contents of the present invention, please refer to the following description. Please refer to the figures 1 to 7. The method for manufacturing a heat sink for wafer sealing, which comprises the following steps. The second stent is formed by a first metal sheet, which is over-punched and insulated to form a long time. After punching and cutting 13, the center has a perforation 42 and the helmet guides φ a. The peak 咕.,., the conductive bracket 40. The first metal sheet is made of impedance aluminum metal, and the right 俨 俨 彻And the ant..., the sex is not too big... the advantage is that it is most suitable as a large-area bracket. (9) It is necessary to have an insulating effect, and the present invention is as follows: the coating method, the metal sheet or the material, The surface of the bracket 1362585 of the present invention is provided with a convex portion 41 so that the bracket 40 protrudes from the surface, and at least the center of the convex portion 41 is provided at the center of the convex portion 41. - perforation 42, the bracket. 40 surface is further provided with an insulating layer 43' It is ensured that the electrical insulation of the bracket is completed. A conductive block forming step 20, a first metal plate with low impedance and good heat dissipation is subjected to punching 21, anti-oxidation treatment 2 2 and blank cutting. After 23, a pair of conductive blocks 50 having a shape of a perforated crucible are formed; as shown in FIGS. 4 and 5, the second metal plate member is made of copper metal having low impedance and good heat dissipation, and is applied by coating. The surface is provided with an anti-oxidation material, or an anti-oxidation metal layer is formed on the surface of the crucible conductive block 50 by a blackening process; therefore, an anti-oxidation, conductivity, and heat dissipation performance can be produced. The conductive block .50 is corresponding to: the bracket 40 has a perforated 42-shaped three-dimensional structure, and the surface cloth X has a layer oxide protective layer 51. In the preferred embodiment of the present invention, the above-mentioned steps 11 and 21, the insulation treatment 1 2, the secondary treatment 22', and the blanking and cutting 13 '23 are all continuous batch processing of D, + m method' Therefore, 'these two steps can be performed simultaneously to reduce the amount of material (4), which can increase the production efficiency. The fitting step 30 'cuts the punched conductive block 5 〇 (single wear and 2 know the electric and electric power of the bracket 40 (single piece) which is cut and cut by the blanking material, and the two are combined As a result of the completion of the heat sink 60, the heat sink 60 is shown in the sixth and seventh figures. The combination of the standard and the post-integration method not only does not require the adhesive which is required for the conventional heat sink, but has the effect of reducing the manufacturing cost, and the heat dissipation 6 is not damaged after being used for a long time or at a high temperature. As the life can be prolonged, the quality of the finished product is also greatly improved. As described above, as shown in Figures 1 to 7, the present invention has the following advantages in implementation: 1. The present invention provides a heat sink for chip packaging. The manufacturing method is to form the metal plate of two different properties into the bracket 40 and the conductive block 50 respectively, and the bracket 40 and the conductive block 50 are combined into a complete heat sink 60, which can not only take into account the characteristics of electrical conduction and electrical insulation. With low impedance and good heat dissipation, it can also reduce manufacturing. And the cost of use. 2. Moreover, since the heat sink 60 of the present invention is formed by fitting, not only the service life is prolonged, but also the finished product quality is better. Only the above is only the present invention. The preferred embodiments are not intended to limit the scope of the present invention, and other transitions are included in the material of the present invention; therefore, equivalents or modifications of the art may be made without departing from the spirit of the present invention. The equal changes and modifications made by the following should be included in the scope of the present invention. As described above, the heat sink manufacturing method for wafer packaging of the present invention has a patented invention and a utilization price for the industry. In accordance with the provisions of the Patent Law, the invention is filed with the invention 1362585. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing the steps of a preferred embodiment of the present invention. FIG. 2 is a perspective view of a stent according to a preferred embodiment of the present invention. 3 is a cross-sectional view of a structure of a preferred embodiment of the present invention. FIG. 4 is a perspective view of a conductive block according to a preferred embodiment of the present invention. FIG. 5 is a conductive block of a preferred embodiment of the present invention. of BRIEF DESCRIPTION OF THE DRAWINGS FIG. 6 is a perspective view of a preferred embodiment of the present invention. The first embodiment is a cross-sectional view of a preferred embodiment of the present invention. [Main Symbol Description] 10 Bracket Forming Step 11 Stamping 12 Insulation treatment 13 blanking cutting 20 conductive block forming step 21 punching 22 anti-oxidation treatment 23 blanking punching 30 fitting step 40 bracket 41 convex portion 42 perforation 43 insulating layer 50 conductive block 10 1362585 51 anti-oxidation protective layer 60 heat dissipation sheet
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