1362326 九、發明說明： 【發明所屬之技術領域】 本案係關於一種製造方法’尤指一種適用於喷墨頭晶 片之細窄供墨槽製造方法。 【先前技術】 隨著列印技術的發展與列印設備的進步，喷墨印表機 ® (ink jet printer)的功能日益強大，列印品質與效率亦獲得很 大的提升，其中，供墨系統是喷墨印表機中相當關鍵的核 心之一，且喷墨頭晶片的供墨槽品質更可以直接影響到列 印效果。 目前喷墨頭晶片所使用的穿孔加工方法有許多方式， 主要是以乾蝕刻、濕蝕刻、雷射及微喷砂等加工方式來進 行’其中濕蝕刻加工會出現等向性餘刻輪廓的問題，而乾 • 钱刻與雷射加工所使用的設備又較為昂貴，且生產效率較 慢’故在成本因素的考量下一般產業在大量生產時較多採 用微喷砂方式來進行加工，而現行用來進行晶片穿孔的微 喷砂加工方式又可分為兩種，一種為精密單顆供墨槽加工 模式，而另一種為全面式喷砂模式。 精密單顆供墨槽加工模式係先行以電荷耦合元件 (CCD)(未圖示）於晶片11之背面取像及設定定位點12(如 第一圖（a)所示），以運算出精密單顆供墨槽13之位置後， .再加以噴砂方式貫穿，以形成一供墨槽13。此法可減少晶 6 I362326 片11應力集中現象的產生，相較於全面式喷砂亦有較佳 之供墨槽加工形狀，且若單顆供墨槽加工出現問題時便可 立即處理，也能避免整片供墨槽加工出現·不良品，但是若 供墨槽的形狀較長，例如單邊長度大於lcm，則此加工方 式便無法使用，且各種供墨槽的形狀係決定於製造喷嘴的 尺寸，若喷嘴變形則喷出之供墨槽即為不良品，且一旦各 軸承出現誤差，或於加工時噴砂之高壓氣體出現漂浮，則 _其所0tiil之供墨槽亦屬不良品，另外供墨槽與供墨槽間所 需之移動時間較長，例如由第一圖（b)所示之供墨槽14之 位置移動至供墨槽15之位置，以致整體生產效率較慢， 加上耗材損耗率較高，將使機台維護成本偏高。 至於，全面式喷砂則是先行以一種感光保護膜22貼於 晶片21的表面上（如第二圖（a)所示），並運用半導體黃光曝 光對位及顯影技術於該感光保護膜22上完成所需的供墨 槽區域開口 23(如第二圖（b)所示）’以暴露出欲形成供墨槽 • 之晶片21表面，接著，再以全面式喷砂方式將所開出之 供墨槽開口 23喷穿以形成如第二圖（c)所示之複數個供墨 槽24。此做法之各種供墨槽的形狀係決定於半導體黃光曝 光對位及顯影技術，故供墨槽與供墨槽間移動無需定位， 即使供墨槽形狀較長，例如單邊長度大於lcm，亦可使用 此法進行加工，因此可加快生產效率且機台也較便宜。 但是使用全面式喷砂方式的出砂較不穩定，故供墨槽 - 加工形狀較不一致，且在晶片21不需加工處亦常有噴砂 • 存在’將產生晶片21應力集中現象，使供墨槽加工處容 7 易造成裂痕而導致晶片 工問題，亦無法進行加。另外’若有單顆供墨槽之加 用穩定的高壓氣體，再加上進行全面式喷砂需要使 差，將影響良率。力’飄子則所生產的供墨槽形狀極 ,再者，習知於晶片 形成供墨槽24 的正面採用全面式喷砂來喷穿以 會損壞晶片21的阻工值會於晶？1的表面產生靜電 ，靜電1362326 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a manufacturing method, particularly a method for manufacturing a narrow narrow ink supply tank suitable for an ink jet head wafer. [Prior Art] With the development of printing technology and the advancement of printing equipment, the ink jet printer has become more and more powerful, and the printing quality and efficiency have been greatly improved. The system is one of the most critical cores in inkjet printers, and the quality of the ink supply slot of the inkjet head wafer can directly affect the printing effect. At present, there are many ways of using the perforation processing method of the inkjet head wafer, mainly by dry etching, wet etching, laser and micro-blasting, etc., where the problem of the isotropic remnant profile occurs in the wet etching process. However, the equipment used in dry etching and laser processing is more expensive and the production efficiency is slower. Therefore, under the consideration of cost factors, the general industry uses micro-blasting to process more in mass production. The micro-blasting method for wafer perforation can be divided into two types, one is a precision single ink supply tank processing mode, and the other is a comprehensive sandblasting mode. The precision single ink supply tank processing mode is to take a charge coupled device (CCD) (not shown) on the back side of the wafer 11 and set the positioning point 12 (as shown in the first figure (a)) to calculate the precision. After the position of the single ink supply tank 13, the sand blasting method is further penetrated to form an ink supply tank 13. This method can reduce the stress concentration phenomenon of the crystal 6 I362326 sheet 11 , and has better shape of the ink supply tank than the full-scale sand blasting, and can be processed immediately if a single ink supply tank is processed. Avoid the occurrence of defective products in the whole ink supply tank. However, if the shape of the ink supply tank is long, for example, the length of one side is larger than lcm, the processing method cannot be used, and the shape of various ink supply tanks is determined by the nozzle. Dimensions, if the nozzle is deformed, the ink supply tank is a defective product, and if there is an error in each bearing, or the high-pressure gas of the sandblasting floats during processing, the ink supply tank of the 0tiil is also a defective product. The required moving time between the ink supply tank and the ink supply tank is long, for example, the position of the ink supply tank 14 shown in the first figure (b) is moved to the position of the ink supply tank 15, so that the overall production efficiency is slow, The high consumption rate of the upper consumables will make the maintenance cost of the machine high. As for the full-scale sand blasting, a photosensitive protective film 22 is attached to the surface of the wafer 21 (as shown in the second figure (a)), and the semiconductor yellow light exposure alignment and development technology is applied to the photosensitive protective film. 22 completes the desired ink supply tank area opening 23 (as shown in the second figure (b)) to expose the surface of the wafer 21 where the ink supply tank is to be formed, and then, in a full-scale sand blasting manner The ink supply slot opening 23 is sprayed through to form a plurality of ink supply slots 24 as shown in the second diagram (c). The shape of the various ink supply tanks of this method is determined by the semiconductor yellow light exposure alignment and development technology, so that the movement between the ink supply tank and the ink supply tank does not need to be positioned, even if the ink supply tank has a long shape, for example, the length of one side is larger than lcm, This method can also be used for processing, thus speeding up production efficiency and making the machine cheaper. However, the sandblasting using the full-scale sand blasting method is relatively unstable, so the ink supply tank-processing shape is inconsistent, and sandblasting is often performed in the wafer 21 where no processing is required. • There is a stress concentration phenomenon of the wafer 21 to cause ink supply. The groove processing capacity 7 is prone to cracks and causes wafer worker problems, and it is impossible to add. In addition, the addition of a stable high-pressure gas to a single ink supply tank, coupled with the need for comprehensive sand blasting, will affect yield. The force 'floater' is produced in the shape of the ink supply tank. Further, it is known that the front surface of the wafer forming ink supply tank 24 is sprayed with a full-scale sand blasting to damage the wafer 21 and the resistance value will be crystallized. 1 surface generates static electricity, static electricity
供墨槽24认丄，μ ’且隨著產品微小化的發展，每一 ^的大小勢必跟I 將需噴穿更多數目的供^。小，因此同樣的晶片21面積 產生更大的靜電，對^ 9 4 ,這將使得晶片21的表面 而影響噴墨列印品質。、1阻值的損壞將更嚴重，進 例如以目别欲加工製出175/zm以下寬度之供墨槽 的衣程而δ，右其正面採全面噴砂製程雖能提升生產效 率’但其會影響槽孔形狀準確精度，同時也會使得晶片21 的表面產生更大的靜電，對於晶片21阻值的損壞將更嚴 重，進而影響喷墨列印品質，故對於細窄供墨槽製造方式 採正面全面喷砂製程較不臻理想，實有必要予以克服。 因此，如何發展一種可改善上述習知技術缺失’且可 增加產能、提昇生產良率以及克服靜電影響之適用於喷墨 頭晶片之細窄供墨槽製造方法’實為目前迫切需要解決之 問題。 【發明内容】 細窄在二提先：種適用於嘖墨頭晶片之 μ之正而八係先从早孔噴砂製程於喷墨頭晶 面式喷砂製成複數個第_凹槽，接著以全 、二^衣程於喷墨頭晶片之背面進行全面式啥砂，以形 =二第二凹槽，最後於噴墨頭晶月之背面之第二供墨 :p 口處對喷墨頭晶片之第二凹槽進行單孔喷砂製 程’用乂刀别貝穿複數個第二凹槽，以於喷墨頭晶片上形 =複數個供墨槽，俾解決習知供墨槽單純使用全面式喷砂 製程會：晶片的表面產生大量的靜電，嚴重損壞晶片阻 值影響嘴墨列印品質，以及單純使用精密單顆供墨槽 加工製程或是全面式喷砂製程所造成之出砂不穩定、供墨 槽形狀不一致、噴砂所產生之粉塵污染、加工時喷砂之高 壓出現飄浮造成喷出之供墨槽為不良品以及產品良率不 佳等缺點。 為達上述目的，本案之一較廣義實施樣態為提供—種 喷墨頭晶片之細窄供墨槽製造方法，其係適用於喷墨頭晶 片’至少包含下列步驟：（a)提供喷墨頭晶片，其中噴墨 頭晶片具有相對應之正面及背面；（b)分別覆蓋第一感光保 護膜及第二感光保護膜於正面及背面上；（c)利用光罩微影 姓刻製程於第一感光保護膜及第二感光保護膜分別定義 出相對應之複數個第一供墨槽區域開口及複數個第二供 墨槽區域開口；（d)於第一供墨槽區域開口處對喷墨頭晶片 1362326 •之正面進行單孔喷砂製程，以形成複數個第一凹槽；（e) 於第二供墨槽區域開口處對喷墨頭晶片之背面進行全面 式噴砂製程，以形成複數個第二凹槽；（f)以及於第二供墨 槽區域開口處對喷墨頭晶片之背面進行單孔喷砂製程，用 以分別貫穿複數個第二凹槽，以於喷墨頭晶片上形成複數 個供墨槽。 根據本案之構想，其中步驟（f)後更包含下列步驟： g (fl)由喷墨頭晶片之正面及背面分別移除第一感光保護 膜及第二感光保護膜。 根據本案之構想，其中光罩微影蝕刻製程係為半導體 黃光曝光對位及顯影製程。 根據本案之構想，其中全面式喷砂製程係使用粗喷砂 進行加工。 根據本案之構想，其中複數個第二凹槽之深度實質上 係為喷墨頭晶片厚度之2/3。 • 根據本案之構想，其中單孔喷砂製程係使用細喷砂進 行加工。 根據本案之構想，其中單孔喷砂製程係藉由線性XY 精密機構進行定位。 根據本案之構想，其中線性XY精密機構中係附掛喷 嘴，用以喷出細喷砂。 根據本案之構想，其中單孔喷砂製程係使用定量定壓 . 喷砂單元來控制喷嘴進行喷砂製程。 根據本案之構想，其中複數個第一凹槽之深度實質 1362326 上係為30〜50um。 根據本案之構想，其中複數個第二凹槽之深度實質上. 係為350〜450um。 【實施方式】 體現本案特徵與優點的一些典型實施例將在後段的 說明中詳細敘述。應理解的是本案能夠在不同的態樣上具 # 有各種的變化，其皆不脫離本案的範圍，且其中的說明及 圖示在本質上係當作說明之用，而非用以限制本案。 本案所揭露之製造方法主要應用在製造喷墨頭晶片 之細窄供墨槽的穿孔加工方法。請參閱第三圖（a)〜（g)，其 係為本案較佳實施例之喷墨頭晶片之細窄供墨槽製造流 程結構示意圖，以下將以第三圖（a)〜（g)所示之製造流程為 基礎，並配合實施例詳細說明本案發明之内容。 本案之細窄供墨槽製造方法，其供墨槽寬度適用於 ® 175；czm以下，且其所適用之喷墨頭晶片31係具有第一表 面與第二表面，其中第一表面為喷墨頭晶片31之正面32, 而第二表面為喷墨頭晶片31之背面33(如第三圖⑷所 示），首先，必須先清洗喷墨頭晶片31的表面後，再於正 面32與背面33上分別貼覆第一感光保護膜34與第二感 光保護膜35(如第三圖（b)所示），當然，第一感光保護膜34 與第二感光保護膜35的覆蓋方式並不侷限於本實施例之 ·· 黏貼方式，只要是能將任何可以進行光罩微影蝕刻製程之 11 1362326 感光材料確實形成於晶片上之任何方式’均為本案所欲保 護之範圍。 於第一感光保護膜34與第二感光保護膜35覆蓋完成 之後，接著對第三圖（b)所示之喷墨頭晶片31進行一光罩 微影蝕刻製程，於本實施例中可使用半導體黃光曝光對位 及顯影製程，並經過曝光定位及顯影之後，於噴墨頭晶片 31之第一感光保護膜34上定義出複數個第一供墨槽區域 φ 開口 36以暴露出欲形成供墨槽之正面32，並於第二感光 保護膜35上定義出與第一供墨槽區域開口 36相對應之複 數個第二供墨槽區域開口 37並暴露出欲形成供墨槽之背 面33(如第三圖（c)所示），且複數個第一供墨槽區域開口 36 之位置、形狀及尺寸均各自對稱於相對應之複數個第二供 墨槽區域開口 37。 其中光罩微影蝕刻製程係包含許多技術及步驟，例如 光阻塗佈、覆蓋、曝光及顯影等，而本案實施例之光罩微 •影蝕刻製程並不侷限於利用半導體黃光曝光及顯影製程 來定義出複數個第一供墨槽區域開口 36及複數個第二供 墨槽區域開α 37 ’任何可分職第-感光保護膜％與第 二感光保護膜35定義出相對應之第一供墨槽區域開口 ％ 及第二供墨槽區域開口 37之半導體製程均為本案所適用 之範圍。 然後，於複數個第一供墨槽區域開口 36處先對喷墨 -頭晶片31 t正面32進行單孔喷砂製程，主要以細喷砂對 •嘴墨頭晶片31經由第—供墨槽區域開口 36所暴露之正面 12 1362326 32整列一進行單孔噴砂刻，直職刻出複數 槽381為止（如第三圖⑷所示），於本實施例中第-凹槽381 的冰度可為30〜50um，但不以此為限。 由於本案之1*墨頭晶片31係於其正面32以單孔方式 --進行嘴砂侧以產生第—凹槽，除了可減少靜電產1 以將靜電所產生之破壞降至最低外，更可提高後續製程之The ink supply tank 24 recognizes that μ' and as the product is miniaturized, the size of each ^ is bound to be required to be sprayed through a larger number of supplies. Small, so the same area of the wafer 21 produces more static electricity, which will cause the surface of the wafer 21 to affect the quality of the ink jet print. The damage of 1 resistance value will be more serious. For example, it is possible to process and produce the ink supply tank with a width of 175/zm or less and δ, and the full blasting process on the right side of the front can improve the production efficiency. Affecting the accuracy of the shape of the slot, and also causing greater static electricity on the surface of the wafer 21, the damage of the resistance of the wafer 21 will be more serious, thereby affecting the quality of inkjet printing, so the manufacturing method of the narrow ink supply tank is adopted. The frontal full blasting process is less than ideal and needs to be overcome. Therefore, how to develop a method for manufacturing a narrow narrow ink supply tank suitable for an inkjet head wafer, which can improve the above-mentioned conventional technology and increase productivity, improve production yield, and overcome the influence of static electricity, is an urgent problem to be solved. . [Summary of the Invention] The narrowness is in the second step: the type is suitable for the positive electrode of the inkjet chip, and the eight systems are firstly formed from the early hole blasting process to form a plurality of _ grooves in the inkjet head crystal face blasting, and then Full-scale sanding on the back side of the inkjet head wafer, in the shape of two second grooves, and finally on the back of the inkjet head, the second ink supply: the ink jet at the p-port The second groove of the head wafer is subjected to a single hole blasting process. A plurality of second grooves are formed by the boring tool to form a plurality of ink supply grooves on the inkjet head wafer, and the conventional ink supply tank is simply solved. Use a full-scale sandblasting process: a large amount of static electricity is generated on the surface of the wafer, which seriously damages the resistance of the wafer and affects the printing quality of the ink, as well as the use of a precision single ink tank processing process or a comprehensive sandblasting process. The sand is unstable, the shape of the ink supply tank is inconsistent, the dust pollution caused by sand blasting, the high pressure of sandblasting during processing occurs, and the ink supply tank that is sprayed is a defective product and the product yield is poor. In order to achieve the above object, a more general implementation of the present invention provides a method for manufacturing a narrow ink supply tank for an ink jet head wafer, which is suitable for an ink jet head wafer, which comprises at least the following steps: (a) providing ink jet a head wafer, wherein the ink jet head wafer has a corresponding front side and a back side; (b) respectively covering the first photosensitive protective film and the second photosensitive protective film on the front side and the back side; (c) using a mask lithography process The first photosensitive protective film and the second photosensitive protective film respectively define a plurality of corresponding first ink supply groove region openings and a plurality of second ink supply groove region openings; (d) at the opening of the first ink supply groove region The inkjet head wafer 1362326 has a single hole blasting process on the front side to form a plurality of first grooves; (e) a full blasting process is performed on the back surface of the inkjet head wafer at the opening of the second ink supply groove area, Forming a plurality of second grooves; (f) and performing a single hole blasting process on the back surface of the inkjet head wafer at the opening of the second ink supply groove region for respectively penetrating through the plurality of second grooves for inkjet Forming a plurality of ink supplies on the head wafer . According to the concept of the present invention, the step (f) further comprises the following steps: g (fl) removing the first photosensitive protective film and the second photosensitive protective film from the front and the back of the inkjet head wafer, respectively. According to the concept of the present invention, the reticle lithography process is a semiconductor yellow light exposure alignment and development process. According to the concept of the present case, the comprehensive sand blasting process is processed using coarse blasting. According to the concept of the present invention, the depth of the plurality of second grooves is substantially 2/3 of the thickness of the ink jet head wafer. • According to the concept of this case, the single hole blasting process is processed using fine blasting. According to the concept of the present case, the single hole blasting process is positioned by a linear XY precision mechanism. According to the concept of the present case, a linear XY precision mechanism is attached to the nozzle for spraying fine sand blasting. According to the concept of the present case, the single hole blasting process uses a quantitative constant pressure. The blasting unit controls the nozzle for the blasting process. According to the concept of the present invention, the depth of the plurality of first grooves is substantially 30 to 50 um on the substantially 1362326. According to the concept of the present invention, the depth of the plurality of second grooves is substantially 350 to 450 um. [Embodiment] Some exemplary embodiments embodying the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention can be varied in various ways, and it does not deviate from the scope of the present invention, and the descriptions and illustrations therein are used for illustrative purposes in nature, and are not intended to limit the case. . The manufacturing method disclosed in the present application is mainly applied to a perforation processing method for manufacturing a narrow narrow ink supply tank of an ink jet head wafer. Please refer to the third drawing (a) to (g), which are schematic structural diagrams of the manufacturing process of the narrow ink supply tank of the ink jet head wafer of the preferred embodiment of the present invention, and the following figures (a) to (g) Based on the manufacturing process shown, the contents of the present invention will be described in detail in conjunction with the embodiments. The narrow ink supply tank manufacturing method of the present invention, the ink supply groove width is suitable for ® 175; czm or less, and the applicable ink jet head wafer 31 has a first surface and a second surface, wherein the first surface is inkjet The front surface 32 of the head wafer 31, and the second surface is the back surface 33 of the ink jet head wafer 31 (as shown in the third figure (4)). First, the surface of the ink jet head wafer 31 must be cleaned before the front surface 32 and the back surface. 33 is attached to the first photosensitive protective film 34 and the second photosensitive protective film 35 respectively (as shown in the third figure (b)). Of course, the first photosensitive protective film 34 and the second photosensitive protective film 35 are not covered. It is limited to the adhesive method of the present embodiment, and any method capable of forming any photosensitive material capable of performing the mask lithography process on the wafer can be surely protected by the present invention. After the first photosensitive protective film 34 and the second photosensitive protective film 35 are completely covered, a reticle lithography process is performed on the inkjet head wafer 31 shown in the third embodiment (b), which can be used in this embodiment. After the semiconductor yellow light is exposed to the alignment and development process, and after exposure positioning and development, a plurality of first ink supply tank regions φ openings 36 are defined on the first photosensitive protective film 34 of the inkjet head wafer 31 to expose the desired formation. a front surface 32 of the ink supply tank, and defining a plurality of second ink supply tank area openings 37 corresponding to the first ink supply tank area opening 36 on the second photosensitive protective film 35 and exposing the back surface of the ink supply tank to be formed 33 (as shown in the third figure (c)), and the positions, shapes and sizes of the plurality of first ink supply tank region openings 36 are each symmetrical with respect to the corresponding plurality of second ink supply tank region openings 37. The reticle lithography process includes many techniques and steps, such as photoresist coating, coating, exposure and development, etc., and the reticle micro-etching process of the embodiment of the present invention is not limited to the use of semiconductor yellow light exposure and development. The process defines a plurality of first ink supply tank region openings 36 and a plurality of second ink supply tank regions to open α 37 '. Any sub-photosensitive protective film % and the second photosensitive protective film 35 define a corresponding number The semiconductor process of the ink supply tank area opening % and the second ink supply tank area opening 37 are all applicable to the present application. Then, a single hole blasting process is performed on the front surface 32 of the inkjet-head wafer 31 t at a plurality of first ink supply tank region openings 36, mainly by fine blasting, and the nozzle ink chip 31 is passed through the first ink supply tank. The front surface of the area opening 36 is exposed to a single hole blasting, and the plurality of holes 381 are engraved directly (as shown in the third figure (4)). In this embodiment, the ice of the first groove 381 can be It is 30~50um, but not limited to this. Since the 1* ink head wafer 31 of the present invention is in a single hole manner on the front surface 32 thereof to perform the first groove on the side of the mouth, in addition to reducing the static electricity generation 1 to minimize the damage caused by static electricity, Can improve the subsequent process
精準度，且可有效改善嘴墨頭晶片M於後段組裂時，B • 片脆裂的因素。 Μ 接者，再於第二供墨槽區域開口處37對噴墨頭晶片 31之背面33進行-全面式嗔砂製程，主要以粗嘴砂對 墨頭晶片31經由第二供墨槽區域開口 37所暴露之背面33 全面進行蝕刻，直到蝕刻出複數個第二凹槽382為止（如第 二圖（e)所不）’且第二凹槽382之深度可為喷墨頭晶片μ 厚度之2/3深，於本實施例中，第二凹槽382的深度可為 350〜450um，但不以此為限。 • 由於全面式噴砂係對晶片31所暴露的背面33進行噴 砂’因此在短時間内就能完成複數個第二凹槽382之加 工，對整個供墨槽之製程步驟來說，使用全面式喷砂製程 來進行加工’可提高加工效率。接著’以一線性XY精密 機構（未圖示）對複數個第二凹槽382處進行取像及定位， 但不以此為限’且該線性χγ精密機構中附掛有一微小嘴 嘴（未圖示），經定位完成後利用一定量定壓喷砂單元（未圖 . 示）來控制該微小噴嘴於喷墨頭晶片31背面33之第二凹槽 382進行單孔喷砂製程，該微小喷嘴主要以細喷砂分別由 13 1362326 第-供墨槽區域開口 37處再對噴墨頭晶片3ι之第二凹样 進行嘴砂加工，並對整列第二凹槽382 一一噴砂“ 开至=所對應之第一凹槽381且至所需要之大小為止二 形成噴墨頭晶片31之供墨槽39(如第三_所示）。 :參閱第四圖’其係為第三圖(e)所示之噴墨頭晶片之 ^ 4示意圖’如圖所示’於本實施例中，對喷墨頭晶 Π之背面33之第二凹槽382進行單孔嘴砂製程，即由 供墨槽區域開π 371所對應之複數個第二凹槽如做 為=工起點開始喷砂，並沿著同—列之第二供墨槽區域開 口移動位置及喷砂至該列最末之第二供墨槽區域開^ 372,接著再換下一列並由第二供墨槽區域開p 373做為 新的加工起點，繼續喷砂至供墨槽區域開口 374,以此類 推，直到由第二凹槽382貫穿所有對應之複數個第一凹槽 381以形成喷墨頭晶片31之供墨槽39並至所需要之大小 為止，最後，由喷墨頭晶片31之正面32及背面33分別 移除第一感光保護膜34及第二感光保護膜35(如第三圖（g) 所示），即完成本案適用於噴墨頭晶片之供墨槽的製造夕 驟0 本案之喷墨頭晶片31先於其正面32以單孔方式 進行喷砂蝕刻以產生第一凹槽，除了使用單孔喷砂蝕刻< 減少靜電產生以將靜電所產生之破壞降至最低外，更吁提 高後續製程之精準度，且可有效改善喷墨頭晶# 31於後 段組裝時’晶片脆裂的因素，另外，由於藉由半導體製择 所生產之晶月之底部，即本案所述之喷墨頭晶片31之背 1362326 • 面33為基板材質，例如：矽基板，因此本案之供墨槽製 造方法於喷墨頭晶片31之背面33以全面式喷砂製程來進 行大部分的加工，可提高加工效率，且不容易產生靜電， 最後可由喷墨頭晶片31之背面33對第二凹槽382處進行 單孔喷砂製程，可使得供墨槽39的形狀較佳、減少晶片 應力集中以及避免靜電產生的現象。 上述之噴砂製程所使用之喷砂壓力可為30~50PSI，砂 φ 材可為17.5~25um的白色氧化鋁砂，所使用之喷嘴為圓形 且直徑為1.5~2m/m，可使得喷墨頭晶片31正面之靜電值 <0.5KV/inch，但並不以此為限，可依實際需求調整。 綜上所述，本案之適用於喷墨頭晶片之細窄供墨槽製 造方法係藉由先於喷墨頭晶片之正面及背面上分別覆蓋 第一感光保護膜及第二感光保護膜，並經光罩微影蝕刻製 程定義出相對應之第一供墨槽區域開口及第二供墨槽區 域開口並暴露出欲形成供墨槽之喷墨頭晶片表面，接著利 • 用單孔喷砂製程將喷墨頭晶片經由第一供墨槽區域開口 所暴露之正面一一钱刻形成複數個第一凹槽後，再利用全 面式喷砂製程於經由第二供墨槽區域開口所暴露之背面 快速形成深度較第一凹槽深之複數個第二凹槽，最後再由 第二凹槽處以單孔喷砂製程將第二凹槽——貫穿至第一 凹槽並完成供墨槽之形狀，可快速且大量地製造出品質及 形狀良好之供墨槽，因此具有下述優點： _ 1.降低靜電影響及提高製程精準度： 本案係於喷墨頭晶片之背面以全面式喷砂製程來進 15 1362326 • 行大部分的加工，可提高加工效率，且喷墨頭晶片之正面 以單孔喷砂製程——進行蝕刻可減少靜電產生，以降低靜 電對晶片阻值的損壞，更可提高後續製造供墨槽之精準 度，且可有效改善喷墨頭晶片於後段組裝時，晶片脆裂的 因素。 2. 提昇良率： 本案係先以單孔喷砂製程提高精準度，在以全面式喷 Φ 砂製程進行加工，最後以單孔噴砂製程完成供墨槽之製 造，不僅有效改良傳統噴砂中出砂之不穩定因素，亦避免 了晶片出現應力集中現象，使供墨槽形狀保持完整而不易 崩裂，可大幅提升供墨槽之生產良率； 3. 增加產能： 由於全面式喷砂之加工效率較快，將喷墨頭晶片以較 快之蝕刻速度加工形成具有一定深度之第二凹槽，接下來 於單孔喷砂製程中只需花費少許時間即可將第二凹槽貫 • 穿至第一凹槽而完成喷墨頭晶片之供墨槽，可縮短製程所 需時間，相對地亦大大增加了供墨槽之產能； 4. 降低成本： 除了因量產之良率及速度都獲得提昇而使產品本身 之成本降低以外，本案之製造方法亦有效克服供墨槽之形 狀問題，不需因供墨槽之形狀改變而必須製作相同形狀之 噴嘴，故喷嘴之單位成本也因此而下降； _ 5.減少粉塵污染： 由於本案之製造方法能快速而有效率地製造喷墨頭 16 1362326 晶片之供墨槽，亦即在製造過程中喷砂加工之精密程度更 為準確，出砂品質也更為穩定，所以也減少了因喷砂而產 生之粉塵污染，使操作者更容易接受並有助於作業。 是以，本案之適用於喷墨頭晶片之細窄供墨槽製造方 法極具產業之價值，爰依法提出申請。 本案得由熟知此技術之人士任施匠思而為諸般修 飾，然皆不脫如附申請專利範圍所欲保護者。Accuracy, and can effectively improve the B • chip brittle factor when the nozzle ink chip M is split in the back section. Then, the back surface 33 of the inkjet head wafer 31 is subjected to a full-scale sanding process at the opening 37 of the second ink supply tank region, mainly opening the second ink supply tank region with the coarse-mouth sand to the ink head wafer 31. The exposed back surface 33 of 37 is fully etched until a plurality of second recesses 382 are etched (as shown in FIG. 2(e)) and the depth of the second recess 382 can be the thickness of the inkjet head wafer μ. 2/3 deep, in the embodiment, the depth of the second groove 382 may be 350~450um, but not limited thereto. • Since the full-scale blasting system blasts the back surface 33 exposed by the wafer 31, the processing of the plurality of second grooves 382 can be completed in a short time, and the whole process of the ink supply tank is performed. Sand process for processing' can improve processing efficiency. Then, a plurality of second grooves 382 are imaged and positioned by a linear XY precision mechanism (not shown), but not limited thereto, and a linear nozzle is attached to the linear χγ precision mechanism (not As shown in the figure, after the positioning is completed, a certain amount of constant pressure blasting unit (not shown) is used to control the micro nozzle to perform a single hole blasting process on the second groove 382 of the back surface 33 of the inkjet head wafer 31. The nozzle is mainly sandblasted by the fine blasting sand from the opening 13 of the first ink supply groove area of the 13 1362326 first ink supply groove area, and the second groove 382 is sandblasted one by one. = corresponding to the first groove 381 and up to the required size to form the ink supply groove 39 of the ink jet head wafer 31 (as shown in the third_): See the fourth figure 'which is the third figure ( e) The schematic diagram of the ink jet head wafer shown in the drawing is as shown in the present embodiment. In the present embodiment, the second groove 382 of the back surface 33 of the ink jet head wafer is subjected to a single hole nozzle sand process, that is, In the ink tank area, a plurality of second grooves corresponding to π 371 are started to be sandblasted as the starting point of the work, and along the same column The second ink supply tank region opening movement position and sandblasting to the last second ink supply tank region of the column are opened 372, and then the next column is replaced and the second ink supply tank region is opened as a new processing starting point. , continue to blast to the ink supply tank region opening 374, and so on, until the second recess 382 extends through all of the corresponding plurality of first recesses 381 to form the ink supply slot 39 of the inkjet head wafer 31 and to the desired Finally, the first photosensitive protective film 34 and the second photosensitive protective film 35 are removed from the front surface 32 and the back surface 33 of the ink jet head wafer 31 (as shown in the third figure (g)), that is, the application of the present application is completed. The ink jet head wafer 31 of the present invention is blast-etched in a single hole manner on the front surface 32 thereof to produce a first groove, except that a single hole blasting etching is used. Reducing the generation of static electricity to minimize the damage caused by static electricity, and further improving the accuracy of the subsequent process, and effectively improving the factor of the wafer chipping during the assembly of the inkjet head crystal 31, in addition, The bottom of the crystal moon produced by the semiconductor manufacturing, as described in this case The back surface 1362326 of the inkjet head wafer 31 • The surface 33 is a substrate material, for example, a ruthenium substrate. Therefore, the ink supply tank manufacturing method of the present invention performs most of the processing on the back surface 33 of the inkjet head wafer 31 by a comprehensive blasting process. The processing efficiency can be improved, and static electricity is not easily generated. Finally, the single groove blasting process can be performed on the second groove 382 by the back surface 33 of the inkjet head wafer 31, so that the shape of the ink supply groove 39 can be better, and the stress concentration of the wafer can be reduced. And to avoid the phenomenon of static electricity. The blasting pressure used in the above sandblasting process can be 30~50PSI, and the sand φ material can be 17.5~25um white alumina sand. The nozzle used is round and the diameter is 1.5~2m. /m, the electrostatic value of the front side of the inkjet head wafer 31 can be made <0.5KV/inch, but not limited thereto, and can be adjusted according to actual needs. In summary, the method for manufacturing the narrow ink supply tank for the inkjet head wafer is to cover the first photosensitive protective film and the second photosensitive protective film respectively on the front and back surfaces of the inkjet head wafer, and The reticle lithography process defines a corresponding opening of the first ink supply slot region and the opening of the second ink supply slot region and exposes the surface of the inkjet head wafer to form the ink supply slot, and then uses a single hole blasting The process forms a plurality of first grooves by injecting the inkjet head wafer through the front surface exposed by the opening of the first ink supply tank region, and then exposing through the opening of the second ink supply tank region by using a full-scale sandblasting process. The back surface rapidly forms a plurality of second grooves deeper than the first groove, and finally the second groove passes through the second groove to the first groove and completes the ink supply groove by a single hole blasting process The shape can quickly and mass-produce the ink tank with good quality and shape, so it has the following advantages: _ 1. Reduce the influence of static electricity and improve the precision of the process: This case is a comprehensive sand blasting on the back of the inkjet head wafer. Process to enter 15 136232 6 • Most of the processing can improve the processing efficiency, and the front side of the inkjet head wafer is single-hole blasting process - etching can reduce the static electricity generation, reduce the damage of static electricity to the resistance of the wafer, and improve the subsequent manufacturing. The accuracy of the ink supply tank can effectively improve the chip chipping factor when the inkjet head wafer is assembled in the rear stage. 2. Improve the yield: This case firstly improves the precision with a single hole blasting process, and processes it in a comprehensive Φ sanding process. Finally, the ink supply tank is manufactured by a single hole blasting process, which not only effectively improves the traditional blasting. The instability of the sand also avoids the stress concentration phenomenon of the wafer, so that the shape of the ink supply tank remains intact and is not easy to be broken, which can greatly improve the production yield of the ink supply tank; 3. Increase the production capacity: due to the processing efficiency of the comprehensive sand blasting Faster, the inkjet head wafer is processed at a faster etching speed to form a second groove having a certain depth, and then the second groove can be penetrated to the single hole blasting process in a small time. The first groove is used to complete the ink supply slot of the inkjet head wafer, which can shorten the time required for the process, and relatively greatly increase the capacity of the ink supply tank; 4. Reduce the cost: in addition to the yield and speed of mass production In addition to reducing the cost of the product itself, the manufacturing method of the present invention effectively overcomes the shape problem of the ink supply tank, and it is not necessary to make a nozzle of the same shape due to the shape change of the ink supply tank, so The unit cost of the mouth is also reduced; _ 5. Reducing dust pollution: Since the manufacturing method of the present invention can quickly and efficiently manufacture the ink supply tank of the ink jet head 16 1362326 wafer, that is, the precision of sandblasting in the manufacturing process The degree is more accurate and the sand quality is more stable, so the dust pollution caused by sand blasting is also reduced, making it easier for the operator to accept and contribute to the operation. Therefore, the method for manufacturing the narrow ink supply tank for the inkjet head wafer in this case is of great industrial value, and the application is made according to law. This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.
17 1362326 【圖式簡單說明】 第一圖（a)〜(b):其係為習知使用精密單顆供墨槽加工模式 製造供墨槽之結構示意圖。. 第二圖（a)〜(c):其係為習知使用全面式喷砂模式製造噴墨 頭晶片之供墨槽之流程結構示意圖。 第三圖（a)〜（g):其係為本案較佳實施例之喷墨頭晶片之細 窄供墨槽製造流程結構示意圖。 第四圖：其係為第三圖（e)所示之喷墨頭晶片之背面結構示 意圖。 【主要元件符號說明】 11 ： 晶片 12 ： 定位點 13 : 供墨槽 14 ： 供墨槽 15 ： 供墨槽 21 ： 晶片 22 ： 感光保護膜 23 ： 供墨槽區域開口 24 ： 供墨槽 31 ： 喷墨頭晶片 32 ： 正面 33 ： 背面 34 ： 第一感光保護膜 35 ： 第二感光保護膜 36 ： 第一供墨槽區域開口 37 ： 第二供墨槽區域開口 371 :第二供墨槽區域開口 372 :第二供墨槽區域開口 373 :第二供墨槽區域開口 374 :第二供墨槽區域開口 381 :第一凹槽 382 :第二凹槽 39 :供墨槽 1817 1362326 [Simple description of the drawings] The first figure (a) ~ (b): This is a schematic diagram of the conventional structure of the ink supply tank using a precision single ink supply tank processing mode. Fig. 2(a) to (c) are schematic diagrams showing the flow structure of an ink supply tank for manufacturing an ink jet head wafer using a general blasting mode. Third (a) to (g): Fig. 3 is a structural schematic view showing the manufacturing process of the narrow ink supply tank of the ink jet head wafer of the preferred embodiment of the present invention. Fig. 4 is a schematic view showing the structure of the back surface of the ink jet head wafer shown in Fig. 3(e). [Main component symbol description] 11 : Wafer 12 : Positioning point 13 : Ink tank 14 : Ink tank 15 : Ink tank 21 : Wafer 22 : Photosensitive protective film 23 : Ink tank area opening 24 : Ink tank 31 : Inkjet wafer 32: Front side 33: Back surface 34: First photosensitive protective film 35: Second photosensitive protective film 36: First ink supply groove area opening 37: Second ink supply groove area opening 371: Second ink supply groove area Opening 372: second ink supply tank area opening 373: second ink supply tank area opening 374: second ink supply tank area opening 381: first groove 382: second groove 39: ink supply tank 18