TWI362138B - A multi-band bandpass filter - Google Patents

Description

1362138 «. % * IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a microwave circuit, and more particularly to a multi-band pass filter for a wireless communication circuit. [Prior Art] In the communication system for avoiding the wireless microwave band, the Tongcheng device is an important component of the phase. In recent years, due to the trend of low-side 冋 [Low proflle], light weight, high selectivity and multi-band in the field of communication, the design of multi-band filter has become an important communication field. The development of the target. ί物' in the Shuangxianxun system towel, the dual-band H-skin device can be formed by two light-frequency components that are properly connected by light. However, the face-to-face approach will increase the overall area of the filter circuit, which in turn leads to cost. Increase. In view of this, the conventional dual-band pass filters mostly use microstrip lines and other coupling methods for microwave filter design, which not only can reduce the loop area and cost of the circuit and its own transmission line structure makes the frequency response have Periodicity so that the expected dual-band characteristics can be achieved by the passband response that occurs during the appropriate adjustment period. * Similarly, bandpass filters above the three-band band can also be used with microstrip lines and

• Lightweight technology for design. For example: Chen, C.F., etc. in IEEE

Trans. Microw. Theory Tech. Journal Publish "Design of Dual- and

Triple- Passband Filters Using Alternately Cascaded Multiband Resonators, which uses a modified microstrip line structure to control the resonant frequency of the dominant frequency and harmonics, and forms a 5-5 specific microstrip line on a r〇4〇〇3 substrate. The structure of the three-band pass filter, as shown in Figures i and 2, wherein Tables 1 and 2 are the frequency response characteristics analysis table of Figures 1 and 2, respectively. 1D1 shows the drop of the three-band pass chopper Rate response characteristics.

Center frequency Bandwidth 卞f H Completion Insertion loss 2.5GHz - 4% 2.9dB 3.6GHz 4% 2.7dB 5.1GHz 6% 2.3dB The frequency response characteristics of the three-band pass-through waver shown in Figure 2 of Table 2.

Center frequency bandwidth insertion loss 2.3GHz 3.8% 2.5dB 3.7GHz 6.8% 1.9dB 5.3GHz 5% 2.9dB In addition, Lee CH et al. published in the IEEE Microw. Wireless Component Lett. Journal, Design of a New Tri-Band Microstrip BPF Using Combined Quarter-Wavelength SIRsr/, a λ/4 microstrip line and stepped Impedance Resonator (SIR) structure is used to design a three-band pass filter on an RT/Duroid 6010 substrate. As shown in Fig. 3, Table 3 is a frequency response characteristic analysis table of Fig. 3. The frequency response characteristics of the three-band pass filter shown in Fig. 3 in Table 3.

Center frequency bandwidth insertion loss 1.57GHz 8.2% 1.5dB 2.45GHz 7.3% 1.34dB 5.25GHz 9.9% 〇.91dB However, in general, the above-mentioned conventional use has the following disadvantages, for example: 承1362138 * · [Embodiment] The above and other objects of the invention are readily apparent. The following is a more detailed description of the present invention as follows: j, in conjunction with the drawings, the cheeks are shown in reference to 4a to the trait, and the present invention is preferred. * The structure of the band-passing device is as follows: the multi-band pass chopping element 1 of the 4th embodiment, the - - - does not contain a first - -, the coin - ▼ pass filter element 2, a 筮 = book Piece 3 and - fourth band pass 遽帛-read filter

The 3, 4 series are respectively composed of different types of money-passing elements U, as shown in Fig. 4e, the first - Chu:,, and the resonant cavity structure, and a sensitized person to the third band pass filter element 1, 2, 3 use ^, then ^ ^ formed - Sanxian through the seam, and as shown in Figure 4f Figure 4e, the first band pass filter components of the DGS structure are combined. , such as the money 11, according to the multi-band wanted wave flute of the present invention, the first band pass wave wave element 1 has a first L-shaped pass wheel guide n ^ SIR high frequency resonant cavity 13 , ^ L-shaped transmission wire 12, a first

The type of transmission wire is turned into a high frequency resonant cavity 14. The first L-L type transmission wire „== the side of the transmission line 5, and the first #楚一^ end is connected to the first 埠 transmission line 5, and the =1, n frequency resonant cavity 13 system Forming a value of two on the L-shaped transmission line U to form a U-shaped outer frame resonance structure; and the second [type two-type L-type transmission wire transmission line 6 - side, and the first ^ ^ - QTP - one The 柒 is connected to the second 埠 transmission line 6, and a (four) resonant cavity 14 is formed at the other end of the third L-shaped transmission line 9 12 to form another U-shaped outer frame resonance structure, the two illusion height The frequency resonant cavities 13, 14 are mutually aligned on one side of the outer frame resonance structure. As shown in Fig. 4a, the two 11-type outer frame resonance structures are arranged at intervals-distance to form a complete outer The frame resonance structure. As shown in Fig. 5, the end point coupling structure of the first band pass filter element 1 can generate at least a center frequency point of 1.57 GHz (additional rate point). 5.2 GHz center frequency Referring again to FIG. 4b, the second band pass filter element 2 has a first U-shaped and /2 common impurity 21 and a second U-shaped input//2 resonant cavity. The first U-shaped The /2 resonant cavity 21 and the second υ-type λ/2 resonant cavity 22 are oppositely disposed at the same distance, and the first u 01 » ^ ^ Ττ soil and the vibration cavity 1 λ/2 resonant cavity 22 are separated by openings The system is oriented in the opposite direction. As shown in the figure, the central frequency point of the hall can be generated by the second band pass-through structure, and as in the 4th=2:::2nd bandpass chopper element 2 Formed in the outer frame resonance structure of the first band-pass chopping element 1. /f Referring again to FIG. 4e, the third band-passing wave element 3 is substantially a system-end point-to-double The alkali wave H, as shown in Fig. 7, can generate a center frequency point of 2.45 GHz and -5.2 GHz. The third band-passing wave element 3 is disposed on the other side of the frame resonance structure, the third The band pass filter element 3 is a cap-shaped cavity structure having a cap top transfer wire 31 two-one: a cap edge transmission wire 32 and a second cap edge transmission wire 33, the first and the third cap The edge transmission wires 3 2, 3 3 are symmetrically formed at both ends of the cap transmission wire 31, and the decomposed rows are disposed on the first transmission guide 1362138 Lu·5 and the second transmission wire 6 From the other side, it can be seen from Fig. 7 that the upper belt ^pperskirt of the third belt financial component 3 in the 5.2 version is not good, but please refer to FIG. 5 again. The improvement is achieved by the zero point generated by the first band-pass chopper element at the 5 2 GHz + heart frequency. - Referring again to Figure 4d, the fourth band pass chopping element 4 has a - U-type DGS resonant cavity 41 and - second u-type DGS resonant cavity 42. The first U-shaped DGS resonant cavity 41 is formed at the two ends - a widened portion; the same 'the second U-shaped DGS resonant cavity U is also in two A widening portion 42 is formed at the end, wherein the opening of the first DGs resonant cavity 41 faces the opening of the second U-shaped DGS resonant cavity 42, and the two widened portions 411 of the first U-shaped DGS resonant cavity 41 The end position of the second U-shaped DGS resonant cavity 42 and the end position of the second widened portion 421 are spaced apart by a distance (four). By the design of the fourth band-pass element, as shown in Fig. 8, it can produce a center frequency point of -35 GHz. The present invention utilizes the different resonant cavity combination theory described above to first pass the first to fourth band pass filter elements as shown in the 4d figure! 2, 3, 4 are combined with each other on a substrate 7, for example, on an FR4 circuit substrate, an alumina substrate, a Duroid substrate or a ceramic substrate. Preferably, the present invention is based on the multi-band, The wave device is combined to the AB206 [A=Mg, Zn, Ca; B=Ta, Nb] ceramic substrate having a high dielectric constant and a good quality factor, and the present invention is to be configured with the four-sided bonding The basic dielectric constant and thickness are used to calculate the geometry of each of the stripped filter structures (for example, the length and width of the microstrip line), and then each of the designed filters is filtered using an electromagnetic simulation software - 11 - 1302138 · · & , AutoCAD (4) draws the actual structure 'and cooperates with the screen printing technology to print the four bandpass chopper components 2, 3, 4 on the substrate 7 as shown in Figure f. * The circuit of the present invention can also be different. The production method is obtained, for example, by a vapor deposition method. When printing the four belt money components, 2, 3, and 4, please refer to the first, second, and third bandpass filter components.

The system is printed on one side of the AB2〇6 substrate; and the other side of the AB substrate is a solid ground contact surface as shown in FIG. 4 f ® , and the present invention is dug at the ground plane by λ /2 (4) The structure of the fourth band pass filter element 4 is formed.

When the combination of the first, second and third band pass chopping elements 1, 2, 3 is performed, in order to avoid the interaction between the three band pass filter elements 1, 2, 3 due to interaction _ Rate conversion, part of the band pass filter component must be adjusted Μ冓" as shown in Figures 4e and 4f, the first L-type transmission line U of the first band-pass filter element i is connected to the first 埠 transmission line 5 The ends of the second L-type transmission line 12 connected to the second transmission line 6 respectively form a widening portion 111, 121; in addition, the first U-type λ/2 resonant cavity 21 of the second band-pass filter element 2 The two ends form two extensions 211, 212, wherein the end of one extension 211 is aligned with the end of the other extension 212, and the second xj type of the second band pass filter element 2; The two ends of the resonant cavity 22 also form two extending portions 22 222, and the individual ends of the two extending portions 221 and 222 are also aligned with each other. The present invention forms the four band pass filter elements on the ΑΒ2〇6 substrate 7. After 1, 2, 3, 4, 'a network analyzer can be used to measure its characteristics, as shown in Table 4, and with reference to Figure 9, Revealing the response characteristics of the four bandpass-12-chopper components i, 2, 3, and 4

韵粜付ί The 'four-band pass wave elements 1, 2, 3, 4 of the present invention: two should be: compared with the conventional use [compared with the table 丨, 2, 3], the frequency of And the insertion loss has better characteristics, and since the multi-pass m system is formed in the soil t having a high dielectric system, a number and a better quality factor, the size can be further reduced and the high frequency characteristics can be improved. And more f 疋 'The invention has four bands that meet the current commercial frequency band, compared to the system (four) band (four) wave! ! You can get better selectivity. Although the present invention has been disclosed in the above-described preferred embodiments, it is not intended to be used in the present invention. Any of the skilled in the art will be able to make various changes and modifications with respect to the above-described embodiments without departing from the spirit and scope of the present invention. It belongs to the technical scope protected by the present invention, and therefore the scope of protection of the present invention is subject to the definition of the patent scope of the attached temple. —13 — 1362138 « « [Simple description of the diagram] Figure 1: Schematic diagram of the conventional multi-band pass filter. Figure 2: Schematic diagram of a conventional multi-band pass filter. Figure 3: Schematic diagram of a conventional multi-band pass filter. Figure 4a is a schematic diagram of a first band pass filter component of a multi-band pass filter in accordance with a preferred embodiment of the present invention. Figure 4b is a schematic diagram of a second band pass filter component of a multi-band pass filter in accordance with a preferred embodiment of the present invention. Figure 4c is a schematic diagram of a third band pass filter component of a multi-band pass filter in accordance with a preferred embodiment of the present invention. Figure 4d is a diagram showing a fourth band pass filter component of the multi-band pass filter of the preferred embodiment of the present invention. Figure 4e is a diagram showing the combination of the first to third band pass filter elements of the multi-band pass filter of the preferred embodiment of the present invention. Figure 4f is a diagram showing the combination of the first to fourth band pass filter elements of the multi-band pass filter of the preferred embodiment of the present invention. Figure 5 is a graph showing the frequency response characteristics of the first band pass filter element of the multi-band pass filter of the preferred embodiment of the present invention. Figure 6 is a graph showing the frequency response characteristics of the second band pass filter element of the multi-band pass filter of the preferred embodiment of the present invention. Figure 7 is a graph showing the frequency response characteristics of the third band pass filter element of the multi-band pass filter of the preferred embodiment of the present invention. Figure 8 is a graph showing the frequency response characteristics of the fourth band pass filter element of the multi-band pass filter of the preferred embodiment of the present invention. - 14 - 1362138 * - Fig. 9 is a diagram showing the frequency response characteristics of the first to fourth band pass filter elements of the multi-band pass filter of the preferred embodiment of the present invention.

[Description of main component symbols] 1 First band pass filter element 111 widened portion 121 widened portion 14 Second SIR high frequency resonant cavity 21 First U-shaped; 1/2 resonant cavity 212 extended portion 221 extended portion 3 Third band Pass filter element 32 first cap edge transmission wire 4 fourth band pass filter element 41 first U-shaped DGS resonator 42 second U-shaped DGS resonator 5 first turn transmission wire 11 first L-type transmission wire 12 second L Type transmission line 13 first SIR high frequency resonant cavity 2 second band pass filter element 211 extension 22 second U type λ/2 resonant cavity 222 extension 31 cap top transmission wire 33 second cap edge transmission wire 411 widened portion 421 widened portion 6 second transmission wire - 15 -

Claims (1)

1362138 X. Application for Patent Park: 103⁄4 I. 2曰2唆正3 1()() August 22曰 Correction Replacement Page 1. A multi-band pass filter is formed on a substrate, the multi-band pass The chopper includes: - a first-band shryling component, which is oppositely disposed by a distance between the two U-shaped outer frame resonance structures to form a complete outer frame resonance structure, wherein one end of a U-shaped outer frame resonance structure Having a first SIR high frequency resonant cavity, one end of the other U-shaped outer frame resonant structure has a = two SIR high frequency resonant cavity, and the two SIR high frequency resonant cavity systems are mutually aligned in the outer frame resonant structure One side, the first band pass filter element is configured to generate at least a center frequency of 1.57 GHz; and a second band pass filter element is disposed within the outer frame resonance structure, the first band pass filter 'wave element system Formed by a first U-shaped λ/2 resonant cavity and a second U-shaped λ/2 resonant cavity to generate a center frequency of 2.45 GHz and a third band pass filter component disposed in the outer frame The other side of the resonant structure 'the third band pass filter element is formed by a cap resonator structure' To generate a center frequency of 5.2 GHz; wherein the first band pass filter element, the second band pass filter element, and the third band pass filter element are formed together on one side of the substrate. 2. The multi-band pass-through wave filter according to item i of the patent application scope, wherein a U-shaped outer frame resonance structure further has a first L-shaped transmission wire, and the other-port type outer frame resonance structure has a second An L-shaped transmission wire formed on one side of a first transmission line, and one end of the first L-type transmission line is connected to the first transmission line, and -16-100 The first SIR high frequency resonant cavity is formed on the other end of the l-type transmission wire to form the U-shaped outer frame resonance structure; the second type of transmission wire is formed in One side of the second transmission line, and one end of the second L-type transmission line is connected to the second transmission line, and the first SIR to the frequency resonant cavity is formed on the second type of transmission line One end to collectively form the other 外-shaped outer frame resonance structure. The multi-band pass filter according to claim 1, wherein the first λ λ/2 resonant cavity and the second λ /2 resonant cavity are oppositely disposed by the distance, and the first The opening of the U-shaped λ/2 resonant cavity and the second U-shaped λ/2 resonant cavity respectively face in opposite directions. The multi-band pass filter according to claim 2, wherein the s-shaped resonant cavity structure has a cap top transmission wire, a first cap edge transmission wire, and a second cap edge transmission wire. And the second brim transmission wire is symmetrically extended at two ends of the cap transmission wire, and is respectively disposed in parallel on the other side of the first transmission wire and the second transmission wire. The multi-frequency fasting filter according to the first, second, third or fourth aspect of the patent application, further comprising a fourth band pass filter component, having a first U-shaped DGS resonant cavity and a second U-shaped In the DGS resonant cavity, the first U-shaped DGS resonant cavity forms a widened portion at the two ends, and the second U-shaped DGS resonant cavity also forms a widened portion at the two ends, wherein the first U-shaped DGS resonant cavity The opening is toward the opening of the second U-DGS resonant cavity. The fourth band pass filter element is used to generate a center frequency of 3.5 GHz. The multi-band pass filter according to claim 5, wherein the end position of the second widened portion of the first U-shaped DGS resonant cavity and the second type are modified. The end positions of the two widened portions of the DGS resonant cavity are respectively positioned at a distance and aligned. 7. The multi-band pass filter of claim 2, wherein the first L-shaped transmission wire of the first band pass filter element is connected to the end of the first transmission line, and the second The ends of the L-shaped transmission wires connected to the second transmission wires respectively form a widened portion. 8. The multi-band pass filter according to claim 2 or 4, further comprising a fourth band pass filter component having a first U-shaped DGS resonant cavity and a second U-shaped DGS resonant cavity. The first U-shaped DGS resonant cavity respectively forms a widened portion at the two ends, and the second U-shaped DGS resonant cavity also forms a widened portion at the two ends, wherein the opening of the first U-shaped DGS resonant cavity is oriented An opening of the second U-shaped DGS resonant cavity, the fourth band pass filter component is configured to generate a center frequency of 3.5 GHz, and the first L-type transmission wire of the first band pass filter component is connected to the first pass transmission wire And a terminal portion of the second L-shaped transmission line connecting the second transmission line respectively forms a widening portion. 9. The multi-band pass filter of claim 8, wherein an end position of the second widened portion of the first U-shaped DGS resonant cavity and a second widened portion of the second U-shaped DGS resonant cavity The end positions are separated by a distance and aligned. According to the multi-band pass filter described in claim 1, 2, 3 or 4 of the patent application, the first U-type λ/2 mode cavity of the second band-pass filter element is 1362138. 100 years 12 On the first day of the month, the end of the replacement page is formed with an extension portion, and the respective ends of the two extension portions of the first-u type λ/2 resonator are aligned with each other, and the second u-type of the t-th skin element is inserted into the /2 cavity The two ends also form two extensions, and the ends of the second (four) side of the second U-shaped λ/2 resonator are aligned with each other. The multi-band pass filter of claim 5, wherein the second band-shaped red extension of the first λ-type λ/2 cavity of the second band-passing wave element, the first U The two end portions of the two-extension portion of the type λ/2 resonant cavity are mutually aligned. The two ends of the second U-shaped λ/2 resonant cavity of the second band-pass chopper element also form two extensions, the second U-shaped portion The individual ends of the λ/2 resonant cavity 2 are aligned with each other. Π 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依The end of the second band-filtering element of the second _λ/2 resonance II I;: two extensions, the second resonance cavity of the second extension.卩The individual ends are aligned with each other. The multi-band chopper of claim 5, wherein the other side of the substrate forms a ground plane. / l4, the multi-band pass data device described in item 6 of the mt range, wherein the other side of the substrate forms a ground plane. 15. The multi-scale cashmermer described in Item 13 of the 15th, wherein the = four-band pass wave component is excavated at a depth of λ/2 to form a multi-band as described in item 14 of the patent scope. According to the wave device, wherein the fourth band pass filter element is cut out at a depth of λ/2 formed on the ground plane at the correction replacement page on December 1, (10). The multi-band pass filter of claim 1, wherein the substrate is selected from the group consisting of an FR4 circuit substrate, an aluminum oxide substrate, a Dur〇id substrate, and an ab2o6 ceramic substrate. A multi-band pass filter formed on a substrate, the multi-band pass filter comprising: a first band pass filter element having a first L-shaped transmission line, a second L-shaped transmission line, and a a first SIR high frequency resonant cavity, a second SIR high frequency resonant cavity', the first l-type transmission wire is formed on one side of a first transmission line, and one end of the first L-shaped transmission line is connected to the a first pass-through wire, and the first SIR high-frequency resonant cavity is formed at the other end of the L-shaped transfer wire to jointly form a u-shaped outer frame resonance structure; the second L-shaped transmission wire is formed at One side of the second transmission line, and one of the second L-type transmission lines is connected to the second transmission line, and the second SIR high frequency resonant cavity is formed on the second L-shaped transmission line The other end is formed to form another U-shaped outer frame resonance structure, and the two U-shaped outer frame resonance structures are oppositely disposed apart from each other to form a complete outer frame resonance structure, and the first band pass filter element is used for Producing at least a center frequency of 1.57 GHz; - second band a filter element disposed within the outer frame resonance structure, the first band pass filter element having a first U-shaped λ/2 resonant cavity and a second ϋ-type λ/2 resonant cavity 'the first U-shaped λ/ 2 resonant cavity and the second U-shaped λ/2 resonant cavity are oppositely disposed by the distance, and the first υ type λ/2-20 - 1362138 » · December 1st, 100th revised replacement page resonant cavity and the The second 0-type human/2 resonator respectively has an opening in the opposite direction, the second band-pass filter element is used to generate a center frequency of 2.45 GHz; and the third band-pass filter element has a cap-shaped cavity structure. 'There is a cap top transmission wire, a first cap edge transmission wire and a second cap edge transmission wire, and the first and second cap edge transmission wires are symmetrically extended at two ends of the cap top transmission wire. And respectively disposed in parallel on the other side of the first-turn transmission line and the second transmission line, the third band-pass filter element 19 The device is configured to generate a center frequency of 5.2 GHz; wherein the first band pass filter component, the second band pass filter component, and the third band pass filter component are formed together on one side of the substrate. The multi-band pass filter according to claim 18, further comprising a fourth band pass filter component having a first U-type 〇 GS resonant cavity and a second U-shaped DGS resonant cavity, the first The U-shaped DGS 4 cavity forms a widened portion at the two ends, and the second U-shaped j) GS resonant cavity also forms a widened portion at the two ends, wherein the opening of the first U-shaped DGS resonant cavity is oriented The opening of the second u-type DGS resonant cavity is used to generate a rate of 35 GHz. The cheek 2 〇, according to the towel, please refer to the patent item W to solve the filter, wherein the end position of the second wide portion of the first U-shaped DGS resonant cavity and the second wide portion of the two U-shaped DGS resonant cavity The end position is divided into another;;; a distance and the alignment is set. </ br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> The first L-shaped transmission line is connected to the end of the first transmission line, and the second L-type transmission line is connected to the end of the second transmission line to form a widening portion. 22. The multi-band pass filter of claim 18, 19 or 2, wherein the two ends of the first U-type λ/2 resonator of the second band pass filter element form a second extension, The two ends of the second extension of the first U-shaped λ/2 resonator are aligned with each other. The two ends of the second U-type λ/2 resonator of the second band-pass filter element also form two extensions, the second The individual ends of the two extensions of the U-shaped λ/2 resonant cavity are aligned with each other. The multi-band pass filter according to claim 21, wherein the two ends of the first U-type λ/2 resonator of the band-pass filter element form a second extension, the first U-type λ The two ends of the two extensions of the /2 cavity are aligned with each other, and the two ends of the second U-type λ/2 cavity of the second band-pass chopper element also form two extensions, the second U-type λ/ 2 The individual ends of the 'one extension' of the resonant cavity are aligned with each other. 24. The multi-band pass filter of claim 19, wherein the other side of the substrate forms a ground plane. 25. The multi-band pass filter of claim 24, wherein the fourth band pass filter element is scooped at a depth of λ/2 to form the ground. 26. The multi-band pass filter of claim 18, wherein the substrate is selected from the group consisting of an FR4 circuit substrate, an alumina substrate, a Duroid substrate, and a 〇2〇6 ceramic substrate.