TWI362039B - Non-volatile memory and method for cache page copy - Google Patents
Non-volatile memory and method for cache page copy Download PDFInfo
- Publication number
- TWI362039B TWI362039B TW097108191A TW97108191A TWI362039B TW I362039 B TWI362039 B TW I362039B TW 097108191 A TW097108191 A TW 097108191A TW 97108191 A TW97108191 A TW 97108191A TW I362039 B TWI362039 B TW I362039B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- bit
- data
- quot
- bits
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 484
- 238000000034 method Methods 0.000 title claims description 51
- 230000000694 effects Effects 0.000 claims description 33
- 238000007667 floating Methods 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000004044 response Effects 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000003860 storage Methods 0.000 description 26
- 238000009826 distribution Methods 0.000 description 17
- 238000012937 correction Methods 0.000 description 15
- 230000009471 action Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 6
- 230000003044 adaptive effect Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 241000723353 Chrysanthemum Species 0.000 description 1
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 1
- 241000254173 Coleoptera Species 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001343 mnemonic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000013643 reference control Substances 0.000 description 1
- 235000002020 sage Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5643—Multilevel memory comprising cache storage devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/683,356 US7502255B2 (en) | 2007-03-07 | 2007-03-07 | Method for cache page copy in a non-volatile memory |
| US11/683,365 US7499320B2 (en) | 2007-03-07 | 2007-03-07 | Non-volatile memory with cache page copy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200903496A TW200903496A (en) | 2009-01-16 |
| TWI362039B true TWI362039B (en) | 2012-04-11 |
Family
ID=39504940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097108191A TWI362039B (en) | 2007-03-07 | 2008-03-07 | Non-volatile memory and method for cache page copy |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2132749B1 (enExample) |
| JP (1) | JP4791580B2 (enExample) |
| KR (1) | KR101518228B1 (enExample) |
| TW (1) | TWI362039B (enExample) |
| WO (1) | WO2008109411A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8102705B2 (en) * | 2009-06-05 | 2012-01-24 | Sandisk Technologies Inc. | Structure and method for shuffling data within non-volatile memory devices |
| JP2011150749A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2011181131A (ja) * | 2010-02-26 | 2011-09-15 | Toshiba Corp | 半導体記憶装置 |
| JP2013069392A (ja) | 2011-09-26 | 2013-04-18 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のデータ書き込み方法 |
| KR101893145B1 (ko) * | 2011-12-06 | 2018-10-05 | 삼성전자주식회사 | 메모리 시스템들 및 그것들의 블록 복사 방법들 |
| JP6652470B2 (ja) * | 2016-09-07 | 2020-02-26 | キオクシア株式会社 | 半導体記憶装置 |
| JP7051546B2 (ja) * | 2018-04-16 | 2022-04-11 | キオクシア株式会社 | メモリシステムおよび制御方法 |
| US11322218B2 (en) | 2020-06-08 | 2022-05-03 | Micron Technology, Inc. | Error control for memory device |
| CN120853651A (zh) * | 2024-04-28 | 2025-10-28 | 长江存储科技有限责任公司 | 存储系统、存储系统的操作方法、控制器及存储介质 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6687158B2 (en) * | 2001-12-21 | 2004-02-03 | Fujitsu Limited | Gapless programming for a NAND type flash memory |
| US7447078B2 (en) * | 2005-04-01 | 2008-11-04 | Sandisk Corporation | Method for non-volatile memory with background data latch caching during read operations |
| KR100648286B1 (ko) | 2005-07-04 | 2006-11-23 | 삼성전자주식회사 | 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치 |
| WO2007131127A2 (en) * | 2006-05-05 | 2007-11-15 | Sandisk Corporation | Merging queued memory operation in a non-volatile memory |
-
2008
- 2008-02-29 KR KR1020097009984A patent/KR101518228B1/ko not_active Expired - Fee Related
- 2008-02-29 EP EP08731086.8A patent/EP2132749B1/en not_active Not-in-force
- 2008-02-29 WO PCT/US2008/055449 patent/WO2008109411A1/en not_active Ceased
- 2008-02-29 JP JP2009552806A patent/JP4791580B2/ja not_active Expired - Fee Related
- 2008-03-07 TW TW097108191A patent/TWI362039B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200903496A (en) | 2009-01-16 |
| EP2132749B1 (en) | 2014-03-26 |
| WO2008109411A1 (en) | 2008-09-12 |
| KR101518228B1 (ko) | 2015-05-08 |
| JP4791580B2 (ja) | 2011-10-12 |
| EP2132749A1 (en) | 2009-12-16 |
| KR20100014242A (ko) | 2010-02-10 |
| JP2010520575A (ja) | 2010-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7502255B2 (en) | Method for cache page copy in a non-volatile memory | |
| US7499320B2 (en) | Non-volatile memory with cache page copy | |
| TWI383396B (zh) | 用於頁內或頁間之資料的晶片內虛亂數化方法及非揮發記憶體 | |
| US7345928B2 (en) | Data recovery methods in multi-state memory after program fail | |
| KR101727349B1 (ko) | 비휘발성 메모리 및 오류들을 관리하기 위한 가속화된 기입후 판독을 사용한 방법 | |
| TWI396199B (zh) | 非揮發性記憶體之快取操作中資料鎖存之利用 | |
| US7420847B2 (en) | Multi-state memory having data recovery after program fail | |
| US8472280B2 (en) | Alternate page by page programming scheme | |
| KR101578812B1 (ko) | 가장 빠른 및/또는 가장 느린 프로그래밍 비트를 무시하여 프로그램 검증이 감소된 비휘발성 메모리와 방법 | |
| JP4814995B2 (ja) | 読み出し操作中にデータラッチでバックグラウンドキャッシングを行う不揮発性メモリとその方法 | |
| US8423866B2 (en) | Non-volatile memory and method with post-write read and adaptive re-write to manage errors | |
| US9213601B2 (en) | Adaptive data re-compaction after post-write read verification operations | |
| CN101512668B (zh) | 对于快闪存储器中的循环效应的伪随机及命令驱动位补偿及其方法 | |
| JP4778585B2 (ja) | フラッシュメモリにおけるサイクル効果の擬似ランダムおよびコマンド主導型ビット補償とその方法 | |
| JP4791580B2 (ja) | 不揮発性メモリおよびキャッシュページコピー方法 | |
| US10115465B2 (en) | Functional data programming in a non-volatile memory | |
| TWI410974B (zh) | 於編程失敗後具有資料回復之複數狀態記憶體 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |