TWI360162B - - Google Patents
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- Publication number
- TWI360162B TWI360162B TW96122679A TW96122679A TWI360162B TW I360162 B TWI360162 B TW I360162B TW 96122679 A TW96122679 A TW 96122679A TW 96122679 A TW96122679 A TW 96122679A TW I360162 B TWI360162 B TW I360162B
- Authority
- TW
- Taiwan
- Prior art keywords
- gaas
- substrate
- nucleation
- forming
- layer
- Prior art date
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 238000010899 nucleation Methods 0.000 claims description 17
- 230000006911 nucleation Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96122679A TW200901283A (en) | 2007-06-23 | 2007-06-23 | Template forming method of semiconductor optolectronic device grown on Ge substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96122679A TW200901283A (en) | 2007-06-23 | 2007-06-23 | Template forming method of semiconductor optolectronic device grown on Ge substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200901283A TW200901283A (en) | 2009-01-01 |
| TWI360162B true TWI360162B (enExample) | 2012-03-11 |
Family
ID=44721634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96122679A TW200901283A (en) | 2007-06-23 | 2007-06-23 | Template forming method of semiconductor optolectronic device grown on Ge substrate |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200901283A (enExample) |
-
2007
- 2007-06-23 TW TW96122679A patent/TW200901283A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200901283A (en) | 2009-01-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |