TWI358570B - Lcd with ambient light sense function and method t - Google Patents

Lcd with ambient light sense function and method t Download PDF

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Publication number
TWI358570B
TWI358570B TW096145046A TW96145046A TWI358570B TW I358570 B TWI358570 B TW I358570B TW 096145046 A TW096145046 A TW 096145046A TW 96145046 A TW96145046 A TW 96145046A TW I358570 B TWI358570 B TW I358570B
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TW
Taiwan
Prior art keywords
ambient light
thin film
capacitor
film transistor
potential
Prior art date
Application number
TW096145046A
Other languages
English (en)
Other versions
TW200923476A (en
Inventor
Ya Hsiang Tai
Han Ching Ho
Chia Pin Cheng
Original Assignee
Univ Nat Chiao Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW096145046A priority Critical patent/TWI358570B/zh
Priority to KR1020080019800A priority patent/KR20090054879A/ko
Priority to US12/073,485 priority patent/US20090135333A1/en
Priority to JP2008127593A priority patent/JP2009128902A/ja
Publication of TW200923476A publication Critical patent/TW200923476A/zh
Application granted granted Critical
Publication of TWI358570B publication Critical patent/TWI358570B/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Description

100年.12月08日按正替換頁 1358570 .- 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明是有關於一種液晶顯示器，特別是有關於一種具 環境光感測功能之液晶顯示器。 【先前技術】 [0002] 目前，在資訊化的社會裡，電子顯示儀器已被廣泛的應 用在工業及家庭等方面，以作為使用者與各式各樣電子 儀器之間互動的媒介。其佼佼者更首推液晶顯示器，液 晶顯示器由於質量輕、低耗電等特色，已成為曰常生活 中不可或缺的一部分。液晶顯示器主要是由一提供光源 的背光模組、液晶層及許多控制液晶偏轉角度的薄膜電 晶體所組成。其中，薄膜電晶體是場效應電晶體的一種 ，大略的製作方式是在基板上沉積各種不同的薄膜，如 半導體的主動層、介電層和金屬電極層等。而薄膜電晶 體也因其體積小、質量輕等優勢而被普遍地應用在液晶 顯示器上。 [0003] 然而，一般而言，以筆記型電腦為例，液晶顯示面板， 亦即螢幕，所消耗的功率仍佔筆記型電腦整體功率損耗 的三分之一以上。因此，隨著科技的發展，如何打造一 個節省耗電量的液晶螢幕，一直是業界共同努力的目標 。也因此，許多沿襲舊規的製造方法，不再被視為理所 當然，而是重新被謹慎地檢視。例如，在過去的做法裡 ，螢幕的亮度，需維持在一定的強度以上，以避免因為 週遭環境太亮而顯得暗沉。但是，這種作法一來極為耗 電，二來又可能因為螢幕太亮而讓使用者感到刺眼。 096145046 表單編號A0101 第3頁/共23頁 1003455865-0 1358570 [0004] 100年.12月08日修正替换頁 因此，為了結省能源，新一代的液晶螢幕已具備可以隨 著環境光源的亮度，修改自身的發光強度，以提供使用 者最適當亮度的能力。換句話說，新一代的液晶螢幕可 以隨著環境光源的亮度修正自身發光強度，而達到亮度 充足卻又不刺眼的目的。 [0005] 其中，偵測環境光的方法，首推前案US7218048。請參 考第一圖，其為前案之電子顯示裝置的結構示意圖，前 案是使用光感測二極體，PIN d i ode，來做為光感測元 件。此元件在不同強度的光照下會產生不同強度之漏電 流，前案即利用此特性來偵測週遭的亮度。但是，此漏 電流的數量級約為10-8安培，如第二圖所示，外部電路 無法讀到如此微小之訊號，並藉以修正亮度。因此，必 須如第三圖所示，將多個光感測二極體並聯在一起，亦 即並聯多個電晶體Ts來累積電流量，以達到外部電路可 偵測之範圍。因此，前案需要相當大的感測面積，以舉 不僅增加了螢幕上非顯示區域的大小，亦因而增加了相 對應的成本。 [0006] 有鑒於習知技藝之各項問題，為了能夠兼顧解決之，本 發明人基於多年研究開發與諸多實務經驗，提出一種具 環境光感測功能之液晶顯示器及其方法，以作為改善上 述缺點之實現方式與依據。 【發明内容】 [0007] 有鑒於此，本發明之目的就是在提供一種具環境光感測 功能之液晶顯示器及其方法，以解決先前技術中感測面 積太大、成本太高等問題。 096145046 表單编號A0101 第4頁/共23頁 1003455865-0 1358570 [0008] * 100年.12月08日核正替換頁 根據本發明之目的，提出一種環境光感測方法，適用於 一薄膜電晶體，本方法首先將一電容耦接於此薄膜電晶 體之源極，然後使電容之電荷隨著薄膜電晶體之漏電流 而減少，再計算電容之電位因電荷減少而產生轉態所需 要之轉態時間，最後根據轉態時間來計算環境光的強度 [0009] 此外，本發明更提出一種環境光感測電路，適用於一像 素結構，其包括一薄膜電晶體，薄膜電晶體之漏電流大 小與環境光之強度成正比；一電容，電容之一端耦接於 薄膜電晶體之源極，另一端接地；以及一讀出開關，耦 接於薄膜電晶體之源極與一資料讀出線之間。'其中，當 環境光變化時，薄膜電晶體之漏電流亦隨之變化，而使 電容之電位從高電位轉態到低電位所需要的#態時間產 生變化，讀出開關將電容之電位傳遞到資料讀出線，外 部電路即可根據電容的轉態'時間來計算環境光的強度。 [0010] 此外，本發明更提出一種液晶顯示器，可隨環境光調整 一照明模組之亮度，其包含複數個電容，耦接於液晶顯 示器之複數個像素；複數個讀出開關，耦接於這些電容 與一資料讀出線之間，以讀取這些電容之電位；以及一 處理模組，用來根據這些電容之電位從高電位轉態到低 電位所需的時間，來計算環境光之強度，進而調整照明 模組之亮度。 [0011] 承上所述，因依本發明之具環境光感測功能之液晶顯示 器及其方法，具有以下優點： 096145046 表單編號A0101 第5頁/共23頁 1003455865-0 1358570 100年12月08日接正替換頁 [0012] (1) 有效減少感測面積； [0013] (2) 可降低功率消耗； [0014] (3) 可以數位訊號輸出；以及 [0015] (4) 可降低生產成本。 [0016] 茲為使貴審查委員對本發明之技術特徵及所達到之功效 有更進一步之瞭解與認識，謹佐以較佳之實施例及配合 詳細之說明如後。 【實施方式】 [0017] 以下將參照相關圖式，說明依本發明較佳實施例之具環 境光感測功能之液晶顯示器及其方法，為使便於理解， 下述實施例中之相同元件係以相同之符號標示來說明。 [0018] 請參考第四圖，其為本發明之環境光感測方法之步驟流 程圖。首先，如步驟S10所示，本方法將一電容耦接於一 薄膜電晶體之源極。然後因為薄膜電晶體本身的漏電流 ，與環境光的強度成正比，因此可使此電容之電荷隨著 上述薄膜電晶體之漏電流而減少，如步驟S20所示。接下 來，如步驟S30所示，計算此電容之電位因電荷減少而從 高電位轉態到低電位所需要之一轉態時間。最後，根據 此轉態時間的長短來計算環境光之強度，如步驟S40所示 [0019] 換句話說，本方法以現行面板製程所製造的薄膜電晶體 元件，先將電荷儲存於電容中，再利用薄膜電晶體在不 同強度之光源照射下具有不同大小之漏電流的特性，使 電容中電荷流失所需的時間產生差異。亦即，環境光較 096145046 表單编號 A0101 第 § 頁/共 23 頁 1003455865-0 1358570 • u 100年12月08日修正替換百 強時，電容之電位轉態所需的昧 J時間較短。並利用面板上 驅動掃描線的時序驅動電路將蛩& μ 位轉態訊號讀出，而達 到偵測環境光強度之目的。因太士 t 1方法所使用之元件與現 行製程相吻合，故可完全融 呢订面板製程中，進而在 不變動製程及低成本的條件下，1， 建成本發明之目的。 [0020] 本方法在一實施例中，可透過— 資料讀出線來取得電容 • 之電位。此外，為了數位化電交 电么之電位信號，本實施例 亦可將一邏輯閘耦接於資料讀出線。換句話說，電容之 電位可先被饋人—邏輯反閘後，再輪出到資料讀出線。 為了使輸出信號清晰可辨，此邏輯反閘更可卜反相放 大器來實現。此外，資料讀出線與電容之間亦可搞接一 讀出開關，並利肢晶面板既有之掃描線訊號，依序啟 動複數個6M出開關，使資料讀出線依序取得複數個電容 之電位信號。為了使上述_電晶體之漏電流與環境光 八有較佳之互動關係，本實施例之薄膜電晶體可採用非 晶矽薄膜電晶體或多非晶矽薄膜電晶體。 φ [0021] 明繼續參考第五圖，其為本發明之環境光感測電路的結 構示意圖。本電路適用於一畫素結構，其包含一輸入電 壓100、一掃瞄線200、一資料讀出線300、一感光薄膜 電晶體400、一電容500及一讀出開關600 ^其連接關係 如第五圖所示，在此概不贅述。其中，當掃描線2〇〇開啟 感光薄膜電晶體400後，輸入電壓100將電容5〇〇之電位 Vc提升到高電位；當掃描線2〇〇關閉感光薄膜電晶體4〇〇 時，感光薄膜電晶體4〇〇在環境光的照射下，會產生一漏 電流，而且此漏電流之大小，與環境光之強度呈正比， 096145046 表單編號 AGlfll ^ 7 1/* 23 I 1003455865-0 1358570 100年.12月08日核正替換頁 此漏電流會漸漸消耗電容5 0 0内所儲存的電荷，電容5 0 0 之電位Vc亦因而隨之下降。然候，讀出開關600將電位Vc 的變化情形傳遞到資料讀出線300。藉此，外部電路即可 根據電位Vc從高電位轉態到低電位所需的時間，來推算 環境光之強弱。其中，上述感光薄膜電晶體400可使用非 晶矽薄膜電晶體或多非晶矽薄膜電晶體，以取得較佳的 環境光感測效果。 [0022] 請繼續參考第六圖，其為本發明之環境光感測電路之另 一結構示意圖。其中，本發明於一實施例中，更可在電 φ 容500與讀出開關600之間耦接一反相放大器700。則電 容500之電位Vc可透過此反相放大器700轉換為一反相且 放大之數位信號，因而具備低複雜度、高準確性等優點 ，以方便外部電路判斷環境光的強度。 [0023] 請參考第七圖，其為本發明一實施例之環境光感測電路 的結構圖。其中，讀出開關600可由一薄膜電晶體開關 610來實現；此外，讀出開關600前級更可耦接一訊號放 大電晶體620來放大輸出電壓Vout。 鲁 [0024] 請參考第八圖，其為本發明另一實施例之環境光感測電 路的結構圖《其中，反相放大器700可由P型薄膜電晶體 710與N型薄膜電晶體720組成，其原理為本技術領域中具 有通常知識者所悉知，在此概不贅述。讀出開關600則由 一薄膜電晶體開關610所構成，且受控於一第二掃描線 220，藉此，本實施例之所有構件皆可透過現有之製程來 實現。液晶螢幕之掃描信號依序饋入第一掃描線210與第 二掃描線220，因而依序啟動感光薄膜電晶體400與薄膜 096145046 表單编號A0101 第8頁/共23頁 1003455865-0 1358570 [0025]
[0026] &晶體開’1G °因此’資料讀出線3 00可 電壓Vout之波型。如第九圖所示，資料讀出線3〇〇以婦扣 k號為基頻，計算輸出電壓信號之電位轉態時間的長翅田 例如，強光照射下，輸出電壓y〇ut在一個基頻内即由 局電位轉態為低電位。而當環境光較弱時，輸出電壓 V〇ut可能經過2〜3個基頻才轉態。 請參考第十圖，其為本發明之液晶顯示器之結構示意圖 。其包括一處理模組81〇、一照明模組82〇、一面板9〇〇 、一資料讀出線3〇〇、若干讀出開關600、若干電容5〇〇 與若干像素830。眾所週知，面板900本身具有相當多的 像素結構’使用者可視製程需求或成本考量將部份或所 有像素830耦接電容500與讀出開關600。當像素83〇内的 薄膜電晶體在環境光照射下’產生漏電流時，電容5〇〇之 電位會隨著漏電流不斷移除電容500的電荷而下降。處理 模組810依序啟動讀出開關600，將電容5〇〇之電位信號 傳遞到資料讀出線300，處理模組810透過資料讀出線 300取得代表環境光強弱之電容電位轉態時間後，便可調 整照明模組820之強度，例如背光模組，以達到節省耗電 量之目的。此外，為了放大電容500之電位信號以增加鑑 別度以及數位化上述.的電位轉態時間，電容5〇〇可耗接_ 邏輯反閘，例如一反相放大器700。 接下來，請參考第十一圖，其為本發明之模擬波形圖， 此模擬波形係就不同強度之環境光照射下，模擬TFT電晶 體漏電流的大小。請一併參考第十二圖，其係本發明一 實施例之實測波形圖，此係實測第一掃描線訊號與輸入 096145046 表單編號A0101 第9頁/共23頁 1003455865-0 1358570 _ 10Q年12月08日按正替換頁 電壓訊號作動後，不同強度之環境光照射下，TFT電晶體 漏電流的大小狀態。 [0027] 雖然本發明利用薄膜電晶體之漏電流的大小與環境光之 強度成正比來偵測環境光的變化，但並不以此為限，若 薄膜電晶體之漏電流的大小與環境光之強度成反比，亦 可遂行本發明偵測環境光之目的，而不脫離本發明利用 薄膜電晶體之漏電流來偵測環境光的精神。因此，上述 之薄膜電晶體較佳可為非晶矽薄膜電晶體或多非晶矽薄 膜電晶體，但並不以此為限。 φ [0028] 綜上所述，本發明之具環境光感測功能之液晶顯示器及 其方法，具有.下列特色： [0029] 1.以現行製程之薄膜電晶體做為環境光感測器。 [0030] 2.減少感測面積。 [0031] 3.可降低功率消耗。 [0032] 4.可降低生產成本。 [0033] 5.可以數位訊號輸出。 [0034] 以上所述僅為舉例性，而非為.限制性者。任何未脫離本 發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 [0035] 第1圖係為前案之電子顯示裝置之結構示意圖； 第2圖係為前案之電子顯示裝置之漏電流示意圖； 第3圖係為前案之電子顯示裝置之局部示意圖； 096145046 表單編號A0101 第10頁/共23頁 1003455865-0 1358570 “ 100年12月08日梭正替換頁 第4圖係為本發明之環境光感測方法之步驟流程圖； 第5圖係為本發明之環境光感測電路之結構示意圖； 第6圖係為本發明之環境光感測電路之另一結構示意圖； 第7圖係為本發明之環境光感測電路之晝素結構示意圖； 第8圖係為本發明之環境光感測電路之另一晝素結構示意 圖； 第9圖係為本發明之環境光感測電路之波型示意圖； 第10圖係為本發明之液晶顯示器之結構示意圖； 第11圖係為本發明之模擬波形圖；以及 • 第12两係為本發明一實施例之實測波形圖。 【主要元件符號說明】 [0036] S10〜S40 :步驟； 100 :輸入電壓； 200 :掃描線； 210 :第一掃描線； 220 :第二掃描線； 300 :資料讀出線； ® 400 :感光薄膜電晶體； 500 :電容； 600 :讀出開關； 610 :薄膜電晶體開關； 6 2 0 ·訊號放大電晶體， 700 :反相放大器； 710 : P型薄膜電晶體； • 720 : N型薄膜電晶體； 096145046 810 :處理模組； 表單編號A0101 第11頁/共23頁 1003455865-0 1358570 820 :照明模組； 830 :像素；以及 900 :面板。 100年12月08日修正替換頁
096145046 表單编號A0101 第12頁/共23頁 1003455865-0

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1358570 ..... 100年12月08日梭正替換頁 七、申請專利範圍： 1 . 一種環境光感測方法，適用於一薄膜電晶體，該方法包括 將一電容之一端耦接於該薄膜電晶體之源極，另一端接地 J 將該薄膜電晶體之汲極耦接於一輸入電壓，並藉由該輸入 電壓使該電容產生電位； 使該電容之電荷隨著該薄膜電晶體之漏電流而減少； 計算該電容之電位因電荷減少而產生轉態所需要之一轉態 時間；以及 根據該轉態時間計算該環境光之強度。 2 .如申請專利範圍第1項所述之環境光感測方法，更包括耦 接一邏輯反閘於該電容，以將該電容之電位轉換為一數位 信號。 3 .如申請專利範圍第2項所述之環境光感測方法，其中該邏 輯反閘可為一反相放大器。 4 .如申請專利範圍第1項所述之環境光感測方法，更包括耦 接一資料讀出線於該電容，以輸出該電容之電位。 5 .如申請專利範圍第4項所述之環境光感測方法，更包括耦 接一讀出開關於該電容與該資料讀出線之間，以讀取該電 容之電位。 6 ,如申請專利範圍第1項所述之環境光感測方法，其中該薄 膜電晶體可為非晶矽薄膜電晶體或多非晶矽薄膜電晶體。 7 . —種環境光感測電路，適用於一像素結構，其包括 一薄膜電晶體，該薄膜電晶體之汲極係耦接於一輸入電壓 096145046 表單编號A0101 第13頁/共23頁 1003455865-0 1358570 100年.12月08日修正替換頁 ，該薄膜電晶體之漏電流與該環境光成正比； 一電容，一端耦接於該薄膜電晶體之源極，另一端接地， 且藉由該输入電壓使該電容產生電位；以及 一讀出開關，耦接於該薄膜電晶體之源極與一資料讀出線 之間； 其中，當環境光變化時，該薄膜電晶體之漏電流亦隨之變 化，使該電容之電位轉態所需要的一轉態時間產生變化， 該讀出開關將該電容之電位傳遞到該資料讀出線，並藉由 一外部電路根據該電容之電位進行轉換之該轉態時間，計 算環境光之強度。 1 8 .如申請專利範圍第7項所述之環境光感測電路，更包括一 邏輯反閘，耦接於該電容與該讀出開關之間，以將該電容 之電位轉換為一數位信號。 9 .如申請專利範圍第8項所述之環境光感測電路，其中該邏 輯反閘可為一反相放大器。 10 .如申請專利範圍第7項所述之環境光感測電路，其中該薄 膜電晶體可為非晶矽薄膜電晶體或多非晶矽薄膜電晶體。 11 . 一種液晶顯示器，可隨一環境光調整一照明模組之亮度， I 其包含： 一環境光感測電路，其包含： 複數個像素，各該像素内包含一薄膜電晶體，各該薄膜電 晶體之汲極係耦接於一輸入電壓，各該薄膜電晶體之漏電 流與環境光成正比； 複數個電容，各該電容之一端分別耦接於各該像素内之各 該薄膜電晶體之源極，另一端接地，且藉由該輸入電壓使 各該電容分別產生電位；及 096145046 表單编號A0101 第14頁/共23頁 1003455865-0 1358570 100年.12月08日修正替換頁 複數個讀出開關，耦接於該些電容與一資料讀出線之間， 以讀取該些電容之電位；以及 一處理模組，根據該些電容之電位轉態所需的一轉態時間 計算該環境光之強度，以調整該照明模組之亮度。 12 .如申請專利範圍第11項所述之液晶顯示器，更包括複數個 邏輯反閘，耦接於該些電容與該些讀出開關之間，以將該 些電容之電位轉換為一數位信號。 13 .如申請專利範圍第12項所述之液晶顯示器，其中該邏輯反 閘可為一反相放大器。 14 .如申請專利範圍第11項所述之液晶顯示器，其中該照明模 組可為一背光模組。
096145046 表單编號A0101 第15頁/共23頁 1003455865-0
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