TWI358431B - - Google Patents

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TWI358431B
TWI358431B TW96109990A TW96109990A TWI358431B TW I358431 B TWI358431 B TW I358431B TW 96109990 A TW96109990 A TW 96109990A TW 96109990 A TW96109990 A TW 96109990A TW I358431 B TWI358431 B TW I358431B
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Taiwan
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cerium oxide
acid
compound
composition
forming
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TW96109990A
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Chinese (zh)
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TW200740939A (en
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Kiyoshi Ishikawa
Toshiyuki Ogata
Hideo Hada
Shogo Matsumaru
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Tokyo Ohka Kogyo Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)

Description

13584311358431

九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種二氧化矽系被膜形成用組成 二氧化矽系被膜。更詳言之,係有關於一種能夠在低 成被膜之二氡化矽系被膜形成用組成物及二氧化矽 膜。 【先前技術】 二氧化矽系被膜形成用組成物,係用以形成二氧 系被膜,主要使用於半導體的配線等的段差缓和或配 的溝填埋。因為是塗佈液體,即便是晶圓上的圖案凹 能夠容.易地填埋,所以能夠以再現性良好的方式進行 的平坦化。而且,該二氧化矽系被膜特別適合使用作 間絕緣膜。 此種二氡化矽系被膜通常能夠藉由將二氧化矽系 形成用組成物塗佈在基板上,再於.8(TC〜300°C加熱, 3 5 0°C以上的溫度焙燒來形成(例如,參照專利文獻1) [專利文獻1]日本特開2005- 1 71 067號公報 【發明内容】 [發明所欲解決之課題] 如上述,因為必須在 3 5 0 °C以上的高溫進行焙燒 而導致生產力低落。又,由於在高溫進行焙燒,致使 鍵結之有機基分解等,在發揮二氧化矽系被膜之需要 上,這並非良好的條件。 物及 溫形 系被 化矽 線間 處亦 配線 為層 被膜 及在 處理 與矽 特性 5 1358431[Technical Field] The present invention relates to a cerium oxide-based coating for forming a cerium oxide-based coating. More specifically, it relates to a composition for forming a bismuth-based film which can be formed into a film at a low level and a ruthenium dioxide film. [Prior Art] A composition for forming a cerium oxide-based film is used to form a dioxo film, and is mainly used for gradation of a semiconductor wiring or the like, or a trench filling. Since it is a coating liquid, even if the pattern concave on the wafer can be easily filled, it can be flattened with good reproducibility. Further, the cerium oxide-based coating film is particularly suitable for use as an insulating film. Such a bismuth-based bismuth-based coating film can be usually formed by coating a composition for forming a cerium oxide-based composition on a substrate and then baking it at a temperature of 2.8 to 300 ° C and baking at a temperature of 305 ° C or higher. (Patent Document 1) [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. 2005- 1 71 067. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] As described above, it is necessary to perform at a high temperature of 350 ° C or higher. The calcination results in a decrease in productivity, and the calcination at a high temperature causes decomposition of the bonded organic groups, which is not a good condition for exhibiting the use of the cerium oxide-based coating. Wiring is also a layer of film and processing and 矽 characteristics 5 1358431

鑒於上述課題,本發明之目的係提供一種 加熱,便能夠形成二氧化矽系被膜之二氧化矽 用組成物。 [解決課題之手段] 本發明者為了解決上述課題,著眼於添加 系被膜形成用組成物之添加劑而重複專心研討 現使用藉由熱作用產生酸或鹼之化合物,能夠 題,而完成了本發明。更具體地,本發明係提供 本發明的第一發明係提供一種二氧化矽系 組成物,係含有矽氧烷聚合物(A)、及藉由熱的 或鹼之化合物(B)而構成。 又,本發明的第二發明係使用前述二氧化 成用組成物而得到之二氧化矽系被膜。 [發明之效果] 本發明之二氧化矽系被膜形成用組成物, 作用產生酸或鹼之化合物。藉此,能夠在不到 度下,便能夠容易地形成二氧化矽系被膜。 【實施方式】 以下,說明有關本發明之實施形態。 《二氧化碎系被膜形成用組成物》 本發明之二氧化矽系被膜形成用組成物, 烷聚合物(A)、及藉由熱的作用產生酸或鹼之 構成。 藉由在低溫 系被膜形成 於二氧化矽 。結果,發 解決上述課 以下之物。 被膜形成用 作用產生酸 矽系被膜形 含有藉由熱 3 5 0 °C的溫 係含有矽氧 b合物(B)而 6 1358431In view of the above problems, an object of the present invention is to provide a composition for cerium oxide which can form a cerium oxide-based coating film by heating. [Means for Solving the Problems] In order to solve the above problems, the inventors of the present invention have focused on the addition of an additive for forming a composition for forming a film, and have repeatedly studied the use of a compound which generates an acid or a base by thermal action, thereby completing the present invention. . More specifically, the present invention provides a cerium oxide-based composition comprising a cerium oxide polymer (A) and a compound of a hot or alkali compound (B). Furthermore, the second invention of the present invention is a cerium oxide-based coating obtained by using the above-described composition for oxidation. [Effects of the Invention] The composition for forming a cerium oxide-based film of the present invention acts as a compound which generates an acid or a base. Thereby, the cerium oxide-based coating can be easily formed without being able to. [Embodiment] Hereinafter, embodiments of the present invention will be described. <<Composition for forming a oxidized particle-forming film>> The composition for forming a cerium oxide-based film of the present invention, the alkyl polymer (A), and an acid or a base are generated by the action of heat. The ruthenium dioxide is formed by a film at a low temperature. As a result, I will solve the above items. The film is formed to form an acid lanthanide film containing a temperate b compound (B) by a temperature of 350 ° C. 6 1358431

&lt;矽氧烷聚合物(A)&gt; 本發明之矽氧烷聚合物(A)(以下,亦稱為1 分」),沒有特別限定,係具有Si-0-Si鍵之聚合物 該矽氧烷聚合物(A)之中,能夠以使用烷氧基矽 水分解縮合物為佳。上述烷氧基矽烷,能夠使用所 的烷氧基矽烷。此種烷氧基矽烷可舉出的有例如下 (a)所示之化合物。 [化學式1] R1„-Si(OR2)4-n …⑷ (式中,R1係表示氫、碳數1〜2 0的烷基或芳基,R2 的有機基,η係0〜2的整數)。 在此,作為1價的有機基,可舉出的有例如烷 基、烯丙基、環氧丙基。此等之中,以院基及芳基 烷基的碳數以1〜5為佳,可舉出的有例如曱基、乙 基、丁基等。又,烷基可以是直鏈狀亦可以是分枝 亦可被氟取代。芳基以碳數6〜20之物為佳,可舉 例如笨基、萘基等。 上述通式(a)所示化合物之具體例係 (al) η = 0時,可舉出的有四甲氧基矽烷、四乙 烷、四丙氧基矽烷、四丁氧基矽烷等, (a2) η=1時,可舉出的有一甲基三曱氧基矽烷 基三乙氧基矽烷、一甲基三丙氧基矽烷、一乙基三 矽烷、一乙基三乙氧基矽烷、一乙基三丙氧基矽烷 基三曱氧基矽烷、一丙基三乙氧基矽烷等的一烷基 (A)成 〇 烧之加 有種類 述通式 係1價 基、芳 為佳。 基、丙 狀,氫 出的有 氧基矽 、 一甲 曱氧基 、一丙 三炫氧 7 1358431 烷 矽 基, 氧等 甲烷 三矽 基基 苯氧 1 烷 、 三 烷基 梦苯 基一 的 等 烷 矽 基 氧 乙 三 基 笨 甲基 二氧 ' 曱 烷二 矽基 基乙 氧二 甲 、 二烷 基矽 曱基 二氧 有丙 的二 出基 舉曱 可二 &gt; 、 時烷 2 矽 II 石 η 基 3)氧 (a乙 二 基 矽烷、二乙基二乙氧基矽烷、二乙基二丙氧基矽烷、二丙 基二曱氧基矽烷、二丙基二乙氧基矽烷、二丙基二丙氧基 矽烷等的二烷基二烷氧基矽烷、二苯基二曱氧基矽烷、二 苯基二乙氧基矽烷等的二苯基二烷氧基矽烷等。 在本發明之二氧化矽系被膜形成用組成物,矽氧烷聚 合物(A)的重量平均分子量以200以上5 0000以下為佳,以 1000以上3000以下為更佳。在此範圍時,能夠提高二氧 化矽系被膜形成用組成物的塗佈性。 烷氧基矽烷的加水分解縮合,能夠藉由使聚合單體之 烷氧基矽烷,在有機溶劑中,於酸觸媒或鹼觸媒的存在下, 進行反應而得到。聚合單體之烷氧基矽烷,可只使用1種, 亦可組合二種以上來進行縮合。 又,亦可在加水分解時添加三甲基甲氧基矽烷、三甲 基乙氧基矽烷、三曱基丙氧基矽院、三乙基甲氧基矽坑、 三乙基乙氧基矽烷、三乙基丙氧基矽烷、三丙基曱氧基矽 烷、三丙基乙氧基矽烷等的三烷基烷氧基矽烷;三笨基曱 氧基矽烷、三苯基乙氧基矽烷等的三笨基烷氧基矽烷等。 成為縮合的前提條件之烷氧基矽烷的加水分解程度, 能夠藉由添加的水量來調整。通常係相對於前述化學式(a) 所示之烧氧基碎燒的合計莫耳數,使水的添加量為 8 1358431 1.0~10.0倍莫耳為佳,以1.5-8.0倍莫耳的比例為更佳。 藉由使水的添加量為1.0倍莫耳以上,能夠充分地增大加 水分解度,能夠良好地形成被膜。另一方面,藉由在1〇.〇 倍莫耳以下,能夠防止凝膠化,能夠使保存安定性良好。&lt;Hexane-Containing Polymer (A)&gt; The siloxane polymer (A) (hereinafter, also referred to as "1") of the present invention is not particularly limited, and is a polymer having a Si-0-Si bond. Among the siloxane polymers (A), it is preferred to use alkoxy hydrazine to decompose the condensate. As the alkoxydecane, the alkoxydecane can be used. The alkoxydecane may, for example, be a compound represented by the following (a). R1 „-Si(OR2)4-n (4) (wherein R1 represents hydrogen, an alkyl group or an aryl group having 1 to 20 carbon atoms, an organic group of R2, and an integer of η of 0 to 2; Here, examples of the monovalent organic group include an alkyl group, an allyl group, and a glycidyl group. Among these, the carbon number of the group and the arylalkyl group is 1 to 5 Preferably, for example, a mercapto group, an ethyl group, a butyl group, etc. may be mentioned. Further, the alkyl group may be linear or branched or substituted by fluorine. The aryl group is a carbon number of 6 to 20 For example, a specific example of the compound represented by the above formula (a) (al) η = 0 may be tetramethoxy decane, tetraethane or tetrapropyl. Oxydecane, tetrabutoxydecane, etc., (a2) When n = 1, monomethyltrimethoxydecyltrimethoxydecane, monomethyltripropoxydecane, monoethyl Monoalkyl (A) such as trioxane, monoethyltriethoxydecane, monoethyltripropoxydecyltridecyloxydecane, monopropyltriethoxydecane, etc. The above formula is preferably a valent group or a aryl group. A group, a propyl group, and a hydrogen group. Oxyquinone, monomethyloxy, propylene oxide 7 1358431 alkyl alkoxide, methane trimethylphenyl phenoxy oxide such as oxygen, trialkylmethane phenyl isodecyloxy Tribasic methyl dioxy- decane dimercapto ethoxy dimethyl, dialkyl fluorenyl dioxy propylene has a di-negative enthalpy, </ br>, alkane 2 矽 II η η 3) Oxygen (a ethanediyl decane, diethyl diethoxy decane, diethyl dipropoxy decane, dipropyl decyloxy decane, dipropyl diethoxy decane, dipropyl dipropoxy a dialkyl dialkoxy decane such as a dialkyl dialkoxy decane, a diphenyl decyloxy decane or a diphenyl diethoxy decane such as a decane or the like. The composition for forming a film, the weight average molecular weight of the siloxane polymer (A) is preferably 200 or more and 50,000 or less, more preferably 1,000 or more and 3,000 or less. In this range, the cerium oxide-based film can be formed. The coating property of the composition. The hydrolysis and condensation of the alkoxydecane can be achieved by alkoxylation of the polymerizable monomer. The decyl alkane is obtained by a reaction in the presence of an acid catalyst or a base catalyst in an organic solvent. The alkoxy decane of the polymerizable monomer may be used singly or in combination of two or more kinds. Further, trimethyl methoxy decane, trimethyl ethoxy decane, trimethyl propyl oxy fluorene, triethyl methoxy cesium, triethyl ethoxy decane may be added during hydrolysis. a trialkylalkoxydecane such as triethylpropoxydecane, tripropyldecyloxydecane or tripropylethoxydecane; trisuccinyloxydecane, triphenylethoxydecane, etc. The degree of hydrolysis of the alkoxydecane which is a prerequisite for the condensation can be adjusted by the amount of water added. Usually, the total molar amount of the alkoxy calcination shown in the above chemical formula (a) is such that the water is added in an amount of 8 1358431 1.0 to 10.0 times the molar amount, and the ratio is 1.5-8.0 times the molar amount. Better. By adding the amount of water to 1.0 times or more, the degree of hydrolysis can be sufficiently increased, and the film can be formed favorably. On the other hand, gelation can be prevented by 1 〇. 倍 mM or less, and storage stability can be improved.

又,化學式(a)所示之炫氧基碎院的缩合,以使用酸觸 媒為佳,所使用的酸觸媒沒有特別限定,能夠使用先前常 被使用之有機酸、無機酸中任一種。有機酸可舉出的有乙 酸、丙酸、丁酸等有機羧酸;無機酸可舉出的有鹽酸、硝 酸、硫酸、磷酸等。酸觸媒可直接添加在烷氧基矽烷與水 之混合物中;又,亦可與水一同作為酸性水溶液而添加在 烷氧基矽烷中。Further, the condensation of the oxy-oxyl compound represented by the chemical formula (a) is preferably an acid catalyst, and the acid catalyst to be used is not particularly limited, and any of the organic acids and inorganic acids which have been conventionally used can be used. . The organic acid may, for example, be an organic carboxylic acid such as acetic acid, propionic acid or butyric acid; and the inorganic acid may, for example, be hydrochloric acid, nitric acid, sulfuric acid or phosphoric acid. The acid catalyst may be directly added to the mixture of alkoxy decane and water; or it may be added to the alkoxy decane as an acidic aqueous solution together with water.

加水分解反應係通常在5〜100小時左右完成。又,在 室溫至未超過8 0 °C之加熱溫度,藉由將酸觸媒水溶液滴加 在含有化學式(a)所示之1種以上的烷氧基矽烷之有機溶劑 中,亦能夠在較短的反應時間完成反應。已加水分解的烷 氧基矽烷隨後產生縮合反應,結果,形成Si-0-Si之網狀 結構。 〈藉由熱作用產生酸或鹼之化合物(B)&gt; 藉由熱作用產生酸或鹼之化合物(以下亦稱為「(B)成 分」),只要能夠藉由加熱產生酸或鹼時,便可以使用而沒 有特別限定。又,產生酸或鹼之化合物,以在 100°C以上 300 °C以下產生酸或鹼之化合物為佳。 二氧化矽系被膜形成用組成物藉由含有上述(B)成 分,能夠以未在例如 3 50 °C以上的高溫進行焙燒的方式來 1358431 形成二氧化矽系被膜。藉此,能夠使塗佈二氧化矽系被膜 形成用组成物後之加熱(例如,乾燥、焙燒)簡略化。 又,藉由含有上述(B)成分,能夠提升對氟酸等之耐藥 品性。The hydrolysis reaction system is usually completed in about 5 to 100 hours. Further, it is also possible to add an acid catalyst aqueous solution to an organic solvent containing one or more kinds of alkoxysilanes represented by the chemical formula (a) at room temperature to a heating temperature of not more than 80 °C. The reaction is completed in a shorter reaction time. The hydrolyzed alkoxysilane is then subjected to a condensation reaction, and as a result, a network structure of Si-0-Si is formed. <Compound (B) which generates an acid or a base by thermal action&gt; A compound which produces an acid or a base by heat (hereinafter also referred to as "(B) component)", as long as it can generate an acid or a base by heating, It can be used without particular limitation. Further, a compound which generates an acid or a base is preferably a compound which generates an acid or a base at 100 ° C or more and 300 ° C or less. The cerium oxide-based film forming composition can form a cerium oxide-based coating film 1358431 by containing the component (B) described above and baking it at a high temperature of, for example, 3 50 ° C or higher. Thereby, heating (for example, drying and baking) after coating the composition for forming a ceria-based coating film can be simplified. Further, by containing the component (B), the resistance to fluoro acid or the like can be improved.

此種物質,可舉出的有熱酸產生劑或熱鹼產生劑。熱 酸產生劑沒有特別限定,能夠使用2,4,4,6-四溴環二稀酮、 甲苯確酸苯偶姻酯(benzoin tosyl ate)、曱苯績酸2-硝基节 基酯(2-nitrobenzyl tosylate)、有機磺酸以外之烷基酯等。 具趙上’可舉出的有疏鹽、蛾錄鹽、苯并售峻鐵鹽(benzo thiazonium salt)、敍鹽、鐫鹽等的鑌鹽等。其中,以碘鑌 鹽、锍鹽、及苯并噻唑鑌鹽為特佳》鈒鹽、及苯并噻唑鑌 鹽之具體例,可舉出的有例如4-乙酿氧基苯基二甲基锍六 氣珅酸鹽(4-ace.toxy phenyl dimethyl sulfonium hexafluoro arsenate)、苄基-4-羥基苯基甲基銃六氟銻酸鹽、4 -乙醯氧 基苯基苄基甲基疏六氟銻酸鹽、二苄基-4-羥基苯基疏六氟 銻酸鹽、4 -乙醯氧基苯基苄基锍六氟銻酸鹽、3 -苄基笨并 噻唑鑌六氟銻酸鹽等。 又,熱鹼產生劑沒有特別限定,能夠使用1 -甲基-1 -(4-聯苯基(Biphenylyl)乙基胺基甲酸鹽、1,1-二甲基-2-氰基乙 基胺基甲酸鹽等的胺基曱酸鹽衍生物;尿素或N,N-二甲基 -Ν’ -甲基尿素等的尿素衍生物;1,4-二氫煙醯胺等的二氫 °比啶衍生物;有機矽烷或有機硼烷的四級化銨鹽、二氰基 二醯胺等。此外,可舉出的有三氯乙酸胍、三氣乙酸曱基 胍、三氣乙酸鉀、笨基磺醯乙酸胍、對氣苯基磺醯乙酸胍、 10 1358431 對甲磺醯笨基磺醯乙酸胍、苯基丙炔酸鉀、苯基丙炔酸胍、 苯基丙炔酸鉋、對氣苯基丙炔酸胍、對伸苯基-雙-苯基丙 炔酸胍、苯基磺醯乙酸四甲銨、苯基丙炔酸四甲銨等。 此等之中,以使用下述化學式(b-l)及下述化學式(b-2) 所表示化合物為特佳。 [化學式2] N〇2Such a substance may, for example, be a thermal acid generator or a thermal base generator. The thermal acid generator is not particularly limited, and 2,4,4,6-tetrabromocyclodione, benzoin tosyl ate, and 2-nitrohexyl phthalate can be used. 2-nitrobenzyl tosylate), alkyl esters other than organic sulfonic acids, and the like. There are sputum salts such as salt, moth salt, benzo thiazonium salt, salt, and strontium salt. Among them, specific examples of the iodonium salt, the phosphonium salt, and the benzothiazolium salt are particularly preferred, and the benzothiazolium salt is exemplified by, for example, 4-ethyloxyphenyl dimethyl 4-ace.toxy phenyl dimethyl sulfonium hexafluoro arsenate, benzyl-4-hydroxyphenylmethyl hexafluoroantimonate, 4-ethoxycarbonylphenylbenzyl sulfonate Fluoride, dibenzyl-4-hydroxyphenyl hexafluoroantimonate, 4-ethoxycarbonylphenylbenzyl hexafluoroantimonate, 3-benzyl benzothiazolium hexafluoroantimonate Salt and so on. Further, the thermal base generator is not particularly limited, and 1-methyl-1 -(4-biphenylylethylcarbamate, 1,1-dimethyl-2-cyanoethyl group can be used. Amino phthalate derivatives such as urethanes; urea derivatives such as urea or N,N-dimethyl-Ν'-methylurea; dihydrogens such as 1,4-dihydroanilinamide a pyridine derivative; a quaternary ammonium salt of an organic decane or an organoborane, a dicyanodiamine, etc. Further, there are ruthenium trichloroacetate, ruthenium trisacetate, potassium triacetate, Styrene sulfonate hydrazine, p-phenyl phenyl sulfonate hydrazine, 10 1358431 p-methylsulfonyl sulfonate hydrazide, phenyl propiolate, phenyl propiolate, phenyl propylic acid planer, P-Phenylphenylpropynoate, p-Phenyl-bis-phenylpropynoyl hydrazide, phenylsulfonate tetramethylammonium, phenylpropynoic acid tetramethylammonium, etc. The compound represented by the chemical formula (b1) and the following chemical formula (b-2) is particularly preferable. [Chemical Formula 2] N〇2

[化學式3][Chemical Formula 3]

(b-2) 又,此等的產生酸或鹼之化合物,可單獨使用一種, 亦可組合使用2種以上。 相對於(A)成分之Si02換算質量,(B)成分之含量以0.1 質量%以上2 0質量%以下為佳,以0 · 5質量%以上1 5質量 1358431 %以下為更佳。藉由使(B)成分在上述範圍,能夠提高二氧 化矽系被膜形成用組成物之經時安定性。 &lt;其他成分&gt; (界面活性劑) 本發明之二氧化矽系被膜形成用組成物,較佳為調配 有界面活性劑。藉由界面活性劑的存在,能夠提升對基板 的塗佈性及展開性。(b-2) Further, these compounds which generate an acid or a base may be used alone or in combination of two or more. The content of the component (B) is preferably 0.1% by mass or more and 20% by mass or less based on the mass of the SiO 2 equivalent of the component (A), and more preferably 0.5% by mass or more and 15% by mass of 1,538,441% or less. By setting the component (B) in the above range, the stability with time of the composition for forming a cerium oxide-based film can be improved. &lt;Other components&gt; (Surfactant) The composition for forming a cerium oxide-based film of the present invention is preferably formulated with a surfactant. The coating property and the spreadability to the substrate can be improved by the presence of the surfactant.

(溶劑)(solvent)

為了提升塗佈性及膜厚度均勻性之目的,本發明之二 氧化矽系被膜形成用組成物以含有溶劑為佳。該溶劑能夠 使用先前通常使用之有機溶劑。具體例可舉出的有如甲 醇、乙醇、丙醇、丁醇、3 -曱氧基-3-曱基-1-丁醇、3 -甲氧 基-1-丁醇之一元醇;如 3 -曱氧基丙酸曱酯、3 -乙氧基丙 酸乙酯之烷基羧酸酯;如乙二醇、二甘醇、丙二醇之多元 醇;如乙二醇一曱基醚、乙二醇一乙基醚、乙二醇一丙基 鱗、乙二醇一丁基謎、丙二醇一甲基謎、丙二醇一乙基謎、 丙二.醇一丙基醚、丙二醇一丁基醚、乙二醇一曱基醚乙酸 酯、乙二醇一乙基醚乙酸酯、丙二醇一甲基醚乙酸酯、丙 二醇一乙基醚乙酸酯之多元醇衍生物;如乙酸、丙酸之脂 肪酸;丙酮、曱基乙基酮、2-庚酮之酮等。此等之中,以 使用醇系、甘醇系的溶劑為佳。又,此等有機溶劑可單獨 使用,亦可組合使用2種以上。 該等溶劑的量沒有特別限定,使溶劑以外的成分(固體 成分)的濃度在5〜100質量%為佳,以20~50質量%為更佳。 12 1358431 藉由在這範圍内,能夠提高塗佈性。 (其他) 又,在本發明,於不損害本發明效果的範圍内,能夠 調配其他的樹脂、添加劑等。 《二氧化矽系被膜的形成方法&gt;In order to improve the coating property and the uniformity of the film thickness, the composition for forming a cerium oxide-based film of the present invention preferably contains a solvent. The solvent can use an organic solvent which has been conventionally used. Specific examples include methanol, ethanol, propanol, butanol, 3-decyloxy-3-mercapto-1-butanol, 3-methoxy-1-butanol monohydric alcohol; An alkyl carboxylate of methoxy methoxypropionate or ethyl 3-ethoxypropionate; a polyol such as ethylene glycol, diethylene glycol or propylene glycol; such as ethylene glycol monodecyl ether, ethylene glycol Monoethyl ether, ethylene glycol monopropyl scale, ethylene glycol monobutyl mystery, propylene glycol monomethyl mystery, propylene glycol monoethyl mystery, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene a polyol derivative of an alcohol monodecyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate; a fatty acid such as acetic acid or propionic acid Acetone, mercaptoethyl ketone, 2-heptanone ketone, and the like. Among these, an alcohol-based or glycol-based solvent is preferably used. Further, these organic solvents may be used singly or in combination of two or more. The amount of the solvent is not particularly limited, and the concentration of the component (solid content) other than the solvent is preferably 5 to 100% by mass, more preferably 20 to 50% by mass. 12 1358431 By being within this range, coatability can be improved. (Others) Further, in the present invention, other resins, additives, and the like can be blended in a range that does not impair the effects of the present invention. <<Method for Forming Cerium Oxide Film>

二氧化矽系被膜的形成方法,首先係將二氧化矽系被 膜形成用組成物塗佈在基板上。將二氧化矽系被膜形成用 組成物塗佈在基板上之方法,能夠使用例如喷灑法 '旋轉 塗佈法、浸潰法、輥塗法等任意的方法,通常可使用旋轉 塗佈法。 接著,對已塗佈在基板上之二氧化矽系被膜形成用組 成物進行加熱處理。加熱處理之手段、溫度、時間等沒有 特別限制,通常可在80〜300°C左右的熱板上加熱1〜6分鐘 左右。In the method of forming a cerium oxide-based coating film, first, a composition for forming a cerium oxide-based coating film is applied onto a substrate. For the method of applying the composition for forming a cerium oxide-based film onto a substrate, for example, a spray coating method, a spin coating method, a roll coating method, or the like can be used, and a spin coating method can be usually used. Next, the composition for forming a cerium oxide-based film which has been applied onto the substrate is subjected to heat treatment. The means for heat treatment, temperature, time and the like are not particularly limited, and it is usually heated on a hot plate of about 80 to 300 ° C for about 1 to 6 minutes.

依照本發明之二氧化矽系被膜形成用組成物時,藉由 加熱處理進行加熱,會產生酸或驗。因為該產生的酸或鹼 會促進加水分解,所以烷氧基會變成羥基,並生成醇。隨 後因為醇的2分子進行縮合而形成S i - 0 - S i之網狀結構, 所以經由加熱處理能夠得到細緻的二氧化矽系被膜。 又,加熱處理以3階段以上為佳,以階段地升溫為佳。 具體上,係於大氣中或氮等惰性氣體環境下,在60〜150 °C左右的熱板上,進行30秒〜2分鐘左右之第1次加熱處 理後,在100〜220°C左右的熱板上,進行30秒〜2分鐘左 右之第2次加熱處理後,進而在15 0〜300 °C左右的熱板上, 13 1358431 進行30秒~2分鐘左右之第3次加熱處理。藉由如此地進 行3階段以上、較佳是3〜6階段左右之階段式的加熱處 理,能夠以較低的溫度來形成二氧化矽系被膜。 [實施例] 接著,基於實施例,更詳細地說明本發明,但是本發 明未被限定於這些實施例。 &lt;實施例1 &gt;According to the composition for forming a cerium oxide-based film of the present invention, heating is carried out by heat treatment to generate an acid or test. Since the acid or base produced promotes hydrolysis, the alkoxy group becomes a hydroxyl group and forms an alcohol. Then, since two molecules of the alcohol are condensed to form a network structure of S i - 0 - S i , a fine cerium oxide-based film can be obtained by heat treatment. Further, the heat treatment is preferably three or more stages, and it is preferred to increase the temperature in stages. Specifically, in the atmosphere of an inert gas such as nitrogen or nitrogen, the first heat treatment is performed on a hot plate of about 60 to 150 ° C for about 30 seconds to about 2 minutes, and then it is about 100 to 220 ° C. On the hot plate, after the second heat treatment for about 30 seconds to 2 minutes, the third heat treatment is performed for about 30 seconds to 2 minutes on a hot plate at about 150 to 300 °C, 13 1358431. By performing the stepwise heating treatment of three or more stages, preferably about three to six stages, the cerium oxide-based coating film can be formed at a relatively low temperature. [Examples] Next, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. &lt;Example 1 &gt;

對以三烷氧基矽烷的加水分解生成物作為主成分之旋 塗式玻璃(Spin-On Glass)材料(OCDT-12 l〇〇〇V(商品名):Spin-On Glass material (OCDT-12 l〇〇〇V (trade name)) containing a hydrolyzed product of trialkoxydecane as a main component:

東京應化工業(股)製、換算SiCh之固體成分濃度:7質量 %),以相對於旋塗式玻璃材料中的固體成分為7 5質量% 的方式添加上述化合物(b-1),來製造二氧化矽系被膜形成 用組成物。使用塗佈器(SS8261NUU :東京應化工業(股) 製),以旋轉數100〇rpm將二氧化矽系被膜形成用組成物塗 佈在6英吋的矽晶圓上。接#,於熱板上在8〇。。進行加熱 60秒鐘、在150〇C加熱60秒鐘、在2〇〇t:加熱6〇秒鐘, 來形成二氧化矽系被膜。 &lt;實施例2&gt; 對含有四曱氧基矽烷/一甲基三甲氧基矽烷=wi(莫耳 比)的加水分解生成物之旋塗式玻璃材料(〇cd 丁_7 7_WK80A(商品名):東京應化工業(股)製換算_之 固體成分濃度:7質量%),以相對於旋塗式玻璃材料中的 固體成分為7質量%的方式添加上述化合物(b l),來製造 氧化矽系被膜形成用組成物。使用塗佈器(SS826inuu : 14 1358431 東京應化工業(股)製),以旋轉數l000rpm將二氧化矽系被 膜形成用组成物塗佈在6英吋的矽晶圓上。接著,於熱板 上在300°C進行加熱60秒鐘,來形成二氧化矽系被旗。 &lt;比較例1 &gt; 使用OCD T-12 1000V,藉由與實施例1同樣的方法’ 來製造二氧化矽系被膜。 &lt;比較例2&gt; 在比較例1’加熱後更在氮氣環境下在4〇0°C進行择 燒’來形成二氧化碎系被膜。 〈比較例3 :&gt; 使用OCD T-7 7000WK80A,藉由與實施例2同樣的方 法’來製造二氧化矽系被膜。 &lt;比較例4 &gt; 在比較例3’加熱後更在.氮環境下在400°C進行焙燒, 來形成一氧化發系被膜。 〈成膜性評價〉 成膜性評價係使用FT-IR(FTIR-615(商品名):日本分 光股份公司製)來進行。實施例1及比較例1、2,係藉由 Si-Ο鍵的尖鋒面積與SiH鍵的尖鋒面積之比來進行評 價。實施例2及比較例3、4係藉由Si_〇鍵的尖鋒面積與 Κ鍵的尖鋒面積之比來進行評價。又,在FT-IR圖,在 1050cm附近的尖鋒係表示Si-0鍵,在2250 cm.1附近的 尖鋒係表示Si-H鍵,在1275 cm-i附近的尖鋒係表示sic 鍵結果如表1及表2所示。又,實施例1之FT-IR圖係 15 1358431 如第1圖所示,比較例1之FT-IR圖係如第2圖所示,實 施例2之FT-IR圖係如第3圖所示,比較例3之FT-IR圖 係如第4圖所示,The compound (b-1) was added to the solid content of the spin-on glass material in an amount of 5% by mass based on the solid content of the spin-on glass material. A composition for forming a cerium oxide-based film is produced. Using a coater (SS8261NUU: manufactured by Tokyo Ohka Kogyo Co., Ltd.), the composition for forming a cerium oxide-based film was coated on a 6-inch ruthenium wafer at a number of revolutions of 100 rpm. Connect #, on the hot plate at 8 〇. . Heating was carried out for 60 seconds, heating at 150 ° C for 60 seconds, and heating at 2 Torr for 6 seconds to form a cerium oxide-based coating. &lt;Example 2&gt; A spin-on glass material containing a hydrolyzed product containing tetradecyloxydecane/monomethyltrimethoxydecane=wi (mole ratio) (〇cd丁_7 7_WK80A (trade name) Manufactured by the Tokyo Chemical Industry Co., Ltd. (solid content concentration: 7 mass%), the compound (bl) is added to the solid content of the spin-on glass material at 7 mass% to produce cerium oxide. It is a composition for film formation. The composition of the cerium oxide-based film-forming film was applied onto a 6-inch ruthenium wafer at a number of revolutions of 1,000 rpm using an applicator (SS826inuu: 14 1358431, manufactured by Tokyo Ohka Kogyo Co., Ltd.). Subsequently, heating was carried out at 300 ° C for 60 seconds on a hot plate to form a cerium oxide-based flag. &lt;Comparative Example 1 &gt; A cerium oxide-based coating film was produced by the same method as in Example 1 using OCD T-12 1000V. &lt;Comparative Example 2&gt; After heating in Comparative Example 1', it was subjected to selective firing at 4 °C under a nitrogen atmosphere to form a oxidized coating film. <Comparative Example 3:&gt; A cerium oxide-based coating film was produced by the same method as in Example 2 using OCD T-7 7000WK80A. &lt;Comparative Example 4 &gt; After heating in Comparative Example 3', it was calcined at 400 ° C in a nitrogen atmosphere to form a oxidized hair-based coating film. <Evaluation of film formation property> The film formation property evaluation was carried out using FT-IR (FTIR-615 (trade name): manufactured by JASCO Corporation). In Example 1 and Comparative Examples 1 and 2, the evaluation was made by the ratio of the sharp area of the Si-Ο bond to the sharp area of the SiH bond. Example 2 and Comparative Examples 3 and 4 were evaluated by the ratio of the sharp area of the Si_〇 bond to the sharp area of the Κ bond. Further, in the FT-IR diagram, the spike system near 1050 cm indicates the Si-0 bond, the spike near 2250 cm.1 indicates the Si-H bond, and the spike near 1275 cm-i indicates the sic bond. The results are shown in Tables 1 and 2. Further, the FT-IR diagram of the first embodiment is 15 1358431. As shown in Fig. 1, the FT-IR diagram of the comparative example 1 is as shown in Fig. 2, and the FT-IR diagram of the embodiment 2 is as shown in Fig. 3. The FT-IR diagram of Comparative Example 3 is shown in FIG. 4,

[表1] 膜厚度(A) Si-0/Si-H 實施例1 4591 3.756 比較例1 4325 2.364 比較例2 4221 3.164 [表 2] . Si-0/Si-C 實施例2 37.645 比較例3 33.562 比較例4 37.209[Table 1] Film thickness (A) Si-0/Si-H Example 1 4591 3.756 Comparative Example 1 4325 2.364 Comparative Example 2 4221 3.164 [Table 2] . Si-0/Si-C Example 2 37.645 Comparative Example 3 33.562 Comparative Example 4 37.209

根據表1、表2,與未添加添加劑(化合物(b-Ι))之比較 例1、比較例3比較時,能夠確認添加有添加劑之實施例1、 2,藉由在200°C以下的加熱,便能夠形成Si-0-Si的網狀 結構。又,與在4 0 0 °C進行焙燒之比較例2、4比較時,具 有較高的Si-0/Si-H比,確認所形成的Si-0-Si網狀結構與 進行焙燒時比較,係同等以上。 而且,對上述實施例2、比較例3的二氧化矽系被膜, 測定相對於在上述二氧化矽系被膜上塗佈緩衝氟酸(BHF) 後的時間之膜減少量,來確認對3質量%濃度的B HF之耐 性。結果如第5圖所示。 從第5圖可清楚知道,與比較例3比較時,能夠確認 16 1358431 實施例2的被膜之耐藥品性高。 【圖式簡單說明】 第1圖係顯示實施例1之FT-IR的圖。 第2圖係顯示比較例1之FT-IR的圖。 第3圖係顯示實施例2之FT-IR的圖。According to Tables 1 and 2, when compared with Comparative Example 1 and Comparative Example 3 in which no additive (compound (b-Ι)) was added, Examples 1 and 2 in which additives were added were confirmed to be at 200 ° C or lower. By heating, a network structure of Si-0-Si can be formed. Further, when compared with Comparative Examples 2 and 4 which were fired at 400 ° C, the Si-0/Si-H ratio was high, and it was confirmed that the formed Si-0-Si network structure was compared with that of baking. , the system is equal to or above. Furthermore, the amount of film reduction of the time after the application of buffered hydrofluoric acid (BHF) to the above-mentioned ceria coating film was measured for the ceria coating film of the above-mentioned Example 2 and the comparative example 3, and the mass of 3 was confirmed. % concentration of B HF tolerance. The result is shown in Figure 5. As is clear from Fig. 5, when compared with Comparative Example 3, it was confirmed that the film of Example 13 of Example 1 was high in chemical resistance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the FT-IR of the first embodiment. Fig. 2 is a view showing the FT-IR of Comparative Example 1. Fig. 3 is a view showing the FT-IR of Example 2.

第4圖係顯示比較例3之FT-IR的圖。 第5圖係顯.示實施例2及比較例3中的二氧化矽系被 膜的B H F对性之圖。 【主要元件符號說明】 無Fig. 4 is a view showing the FT-IR of Comparative Example 3. Fig. 5 is a graph showing the B H F pair of the cerium oxide-based coating films of Example 2 and Comparative Example 3. [Main component symbol description] None

1717

Claims (1)

1358431 L 號專獅.1358431 L lion. 十、申請專利範圍: 1. 一種二氧化矽系被膜形成用組成物,係含有矽氧烷聚 合物(A)、及藉由熱的作用產生酸或鹼之化合物(B)而構成, 該矽氧烷聚合物(A)係烷氧基矽烷的加水分解缩合物, 該產生酸或鹼之化合物(B)係在100 °C以上300 °C以下 產生酸或鹼之化合物,X. Patent application scope: 1. A composition for forming a cerium oxide-based film comprising a siloxane polymer (A) and a compound (B) which generates an acid or a base by heat, and the ruthenium The oxyalkylene polymer (A) is a hydrolyzed condensate of an alkoxy decane, and the acid or base-producing compound (B) is a compound which generates an acid or a base at 100 ° C or more and 300 ° C or less. • 2 1 曰修正本 相對於(A)成分之Si02換算質量,該產生酸或鹼之化 合物(B)之含量為0· 1質量%以上20質量%以下。 2. 如申請專利範圍第1項所述之二氧化矽系被膜形成用 組成物,其中該產生酸或鹼之化合物(B)係下述化學式(b-1) 或(b-2)所表示之化合物,• 2 1 曰 Amendment The content of the acid or base-forming compound (B) is from 0.1% by mass to 20% by mass based on the SiO2 conversion mass of the component (A). 2. The composition for forming a cerium oxide-based film according to the first aspect of the invention, wherein the acid or base-generating compound (B) is represented by the following chemical formula (b-1) or (b-2) Compound, (b- 1 )(b- 1 ) ^)—SOHr) (b — 2 ) 0 18 1358431 3. 如申請專利範圍第1項所述之二氧化矽系被膜形成用 組成物,其中該烷氧基矽烷係含有至少1種選自下述通式 (a)所示之化合物, R1n-Si(OR2)4.„ …⑷ (式中,R1係表示氫、碳數1~20的烷基或芳基,R2係1價 的有機基,η係0〜2的整數)。(2) The composition of the cerium oxide-based film forming method according to the first aspect of the invention, wherein the alkoxy decane contains at least one selected from the group consisting of the following a compound represented by the formula (a), R1n-Si(OR2)4. (4) (wherein R1 represents hydrogen, an alkyl group or an aryl group having 1 to 20 carbon atoms, and R2 is a monovalent organic group; η is an integer from 0 to 2). 4. 一種二氧化矽系被膜,係使用如申請專利範圍第1項 所述之二氧化矽系被膜形成用組成物而得到。4. A cerium oxide-based coating film obtained by using the composition for forming a cerium oxide-based coating film according to the first aspect of the invention. 1919
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