1355680 九、發明說明 【發明所屬之技術領域】 本發明係關於金屬基板與碳基金屬複合材料（MICC : Metal Impregnated Carbon Composites)的接合構造體及該 接合構造體的製造方法’更詳細的爲關於：將由銅或銘所 構成的金屬基板與碳基金屬複合材料，以銲料接合而成的 構造體、使用了該構造體的1C(半導體積體電路）構裝或包 含該1C構裝的電子電路、及該構造體的製造方法。 【先前技術】 在高速、高集積化的半導體的發熱密度非常高、爲了 效率良好的排熱，適於以熱傳導佳的鋁、銅製的散熱基 板’迅速的擴散熱量而散熱的方法。 然而’因爲對於半導體或被使用於半導體的電路基板 的陶瓷的熱膨脹係數爲4~8ppm/°c，鋁、銅的熱膨脹係數 爲16〜23 PPm/°C而較大，由有關的熱膨脹係數的差異， 於接合層產生高的熱應力而不能單純的接合兩者》 此第一對策爲選擇熱膨脹係數小的散熱基板，由先前 熱膨脹係數小的碳化矽、鎢、鉬等，組合熱傳導率高的 銅' 鋁金屬，提供將熱膨脹係數調整至7~10 ppm/1的材 料。 然而，以這些材料的問題點，熱傳導率在使用了銅的 材料的情況爲200〜300 W/m · K、在使用了鋁的材料的情 況爲150~200W/m . K，比起銅、鋁單體的熱傳導率低 1355680 20%以上，另外，因爲基板的彈性率（Young's modulus) 高，在與熱膨脹係數4 PPm/°C範圍的矽、氮化鋁等的接 合，有在接合層產生的熱應力變大、在大面積的接合困難 的問題。 第二對策爲在接合層使用彈性率低的樹脂或銲錫，藉 由熱膨脹係數的差，緩和產的熱應力。但是，缺點爲，樹 脂及銲錫的熱傳導率，各個比1 W/m . K、數10 W/m . K 低，另外因爲破壞應力小，所以厚的接合層變爲必要，結 果接合層的熱阻抗變大。 -另外，亦被指出:在樹脂的情況，吸濕性及耐熱性 低，在銲錫的情況，在實用溫度範圍的降伏應力（Yield Stress)低，容易產生熱疲勞等的難處^ 如以上所述，現在，在電子機器用的被廣泛採用的散 熱系統，在使由熱膨脹係數差產生的熱應力緩和或減少的 接合層之熱傳導率提高成爲課題。 而且，於本案說明書，所謂「熱應力緩和作用」，係 稱：在接合熱膨脹係數相異的二個材料的情況，於接合界 面產生的應力係因爲已知二個材料的熱膨脹係數與各材料 的彈性率爲比例關係，在彈性率低的材料產生的應力變 小’即使於熱膨脹係數大而相異的材料亦能接合，而且亦 可耐由反覆的加熱、冷卻而產生的熱疲勞的作用❶ 鑑於有關情況，本發明者提案：於先前的黑鉛等的碳 材料的細孔內，加壓塡充或含浸金屬而得的碳基金屬複合 材料（例如：參照日本專利第3351778號。）。該碳基金屬複 1355680 合材料，與以前述的碳化矽、鎢、鉬等作爲骨架的材料比 較，熱傳導率高、熱膨脹率爲同等，另外，因爲彈性率 低’在搭載矽或陶瓷等的情況，有緩和在銲錫等的接合層 產生的熱應力的作用’發現了可改善前述問題點的材料， 但是包藏：爲脆性、機械強度低的難處》 作爲此對策，本發明者係掌握了 ：將施加了鏟覆的厚 度1 mm範圍的碳基金屬複合材料，以銲錫接合於銅或銘 基板上’於其上部嘗試將半導體元件以低溫銲錫等接合的 方法’但對於碳基金屬複合材料的熱膨脹係數4 ppm/〇c 〜10 ppm/°c ’ 銅爲 16 ppm/t，另外，對鋁爲 23 ppm/〇c 爲大的相異，銲錫接合後的基板爲以複合材料側作爲凸出 而產生彎曲，有在搭載矽的情況等的後製程產生困難的問 題。熱切期望於有關情況下，應用有熱應力緩和作用的碳 材料而開發彎曲量少、有強度的散熱材料。 專利文獻1 :日本專利第3 3 5 1 77 8號專利公報 【發明內容】 〔發明欲解決的課題〕 因而’發明的課題係鑑於如前述的開發狀況，提供： 於搭載熱膨脹係數小的矽、陶瓷基板等的電子裝置的面， 碳基金屬複合材料發揮熱應力緩和作用，於強度、熱傳導 率’施加接近於基板金屬的銅、鋁的數値，彎曲少的狀態 的含金屬基板與碳基金屬複合材料之構造體及該構造體之 製造方法。 1355680 〔爲了解決課題的手段〕 於是’本發明者爲了解決前述的課題，加上專心致力 硏討的結果’著眼於：將由銅或鋁所構成的金屬基板與特 定的厚度的碳基金屬複合材料於特定條件下接合，如利用 該碳基金屬複合材料的低彈性，可提供抑制了彎曲的產生 的含金屬基板與碳基金屬複合材料之構造體，根據這些知 識而達到完成本發明β 因而，關於本發明，如藉由第一發明， 提供種含金屬基板與碳基金翳複合-材料之構造體一 其特徵爲：具備：金屬基板、銲接於該金屬基板的上面而 成的碳基金屬複合材料。 另外，如藉由第二發明， 提供一種含金屬基板與碳基金屬複合材料之構造體的 製造方法’係具備了金屬基板、和銲接於該金屬基板的上 面而成的碳基金屬複合材料的含金屬基板與碳基金屬複合 材料之構is體的製造方法，其特徵爲：於前述金屬基板與 前述碳基金屬複合材料之間使銲料存在，加熱保持於該銲 料的融點的溫度以上後，至少於加壓下，包含冷卻的製 程0 〔發明的效果〕 關於本發明的含金屬基板與碳基金屬複合材料之構造 體，如前述的，可提供：於碳基金屬複合材料的表面，搭 1355680 載熱膨脹係數小的矽、陶瓷基板等的電子裝置的情況，發 揮碳基金屬複合材料的熱應力緩和作用，於強度、熱傳導 率’施加接近於基板金屬的銅、鋁的數値之電子機器用散 熱基板。另外，如藉由關於本發明的前述構造體的製造方 法，藉由設定接合條件於高溫且高壓下，可有效率的製造 被抑制了彎曲量的前述散熱基板。 【實施方式】 本發明爲關於由金屬製薄片、板材或塊狀物所構成的 金屬基板、和銲接於該金屬基板的上面而作用的厚度 0.1mm~2mm的碳基金屬複合材料所構成的構造體，作爲 更理想的實施形態，包含舉出以下（1)〜（5)者。 (1) 厚度〇.lmm~2inm的碳基金屬複合材料、和在該 複合材料的下面經由銲料而接合上面的銅或鋁基板所構成 的電子機器散熱用含金屬基板與碳基金屬複合材料之電子 機器放熱用構造體。 (2) 銅箔薄片、和於該銅箔薄片的下面經由靜料而 接合上面的厚度O.lmm〜2mm的碳基金屬複合材料、和在 該複合材料的下面經由銲料而接合上面的銅或鋁基板所構 成的電子機器散熱用含金屬基板與碳基金屬複合材料^電； 子機器放熱用構造體。 (3) 於氧化鋁等的陶瓷絕緣基板的下面，經由 而接合上面的厚度0.1mm〜2mm的碳基金屬複合材料、和 在該複合材料的下面經由銲料而接合上面的銅或錦基&m -9- 1355680 構成的電子機器散熱用含金屬基板與碳基金屬複合材料之 電子機器放熱用構造體。 (4) 以於銅或鋁基板的凹處，收納厚度〇.lmin〜2mm 的碳基金屬複合材料，於該複合材料的上下-面經由銲料而 接合銅或鋁箔或者基板，複合材料爲由金屬被覆的形狀構 成的電子機器散熱用含金屬基板與碳基金屬複合材料之電 子機器放熱用構造體。 (5) 金屬基板、和該金屬基板的上面經由銲料而被 接合下面的厚度0_lmm~2mm的碳基金屬複合材料、和該 碳基金屬複合材料的上面經由銲料而被-接合下面的矽元件. 所構成的電子機器散熱用含金屬基板與碳基金屬複合材料 之電子機器放熱用構造體。 作爲關於本發明的含金屬基板與碳基金屬複合材料之 構造體及該構造體的金屬基板，適合銅、鋁或這些的各合 金。作爲金屬基板的形態，無特別限定，而可採用薄片、 板材或塊狀物等之物。金屬基板的厚度，按照適用於前述 構造體的電子機器的構造，可任意的決定，而可選擇在 0.5mm〜5mm、理想爲lmm~3mm的範圍》 作爲爲前述構造體的構成要素的銲料，可使用融點爲 450°C以上的硬銲料及450°C以下的軟銲料，作爲硬銲料 可舉出銀銲料、銅銲料、鎳銲料等、另外可舉出軟鋁銲料 等及鋁接合用銲錫（例如：almit、AM-3 50等）。銲錫爲軟 銲料的代表性之物，使用Pb-Sn系合金等。對於關於本發 明的構造體，融點35CTC以上的銲料爲合適，可使用軟鋁 -10- 1355680 銲料等的軟銲料及更理想爲使用硬銲料。特別是，與被含 有在碳基金屬複合材料的金屬同種類或製造熱傳導率及破 壞韌性高的合金的金屬。關於本發明的構造體，藉由熔融 有關的銲料而使其流入間隙的銲接，無大部分熔融金屬基 板及碳基金屬複合材料的金屬，由進行接合而可得。另 外’作爲有關銲料的代替材料，亦可層疊鋁箔、錫箔、銅 箔、銀箔等的金屬箔而使用。 於關於本發明的含金屬基板與碳基金屬複合材料之構 造體’銲料係與碳基金屬複合材料內的金屬熔接而成爲— 體化’另外’藉由侵入該複合材料的空隙，顯現所謂的固 定（anchor)效睪，具有強化由構成要素的一體化的接合的 作用。 另外’於關於本發明的含金屬基板與碳基金屬複合材 料之構造體’在該碳基金屬複合材料與銅或鋁基板的構造 體全體的厚度爲1mm範圍以上的情況，對於碳基金屬複 合材料的金屬基板的厚度的比例，對於該複合材料丨，金 屬基板約2以上’理想爲1對3以上。於有關比例，以前 述的溫度、壓力處理的構造體的彎曲量，在50mmx50mm 的對角線上被控制於〇.15mm以內，特別理想的彎曲量爲 在50mmx50mm的對角線上被控制於〇.〇5mm以內。 關於本發明的含金屬基板與碳基金屬複合材料之構造 體，具有於搭載部分有熱應力緩和性，而且熱傳導高，熱 膨脹率小的特性。作爲碳基金屬複合材料，選擇有熱傳導 率100 W/m ·Κ以上、熱膨脹係數4 ppm/t：〜15 ppm/»c、 -11 - 1355680 彈性率爲25 GPa以下的特性者。有關的碳基金屬複合材 料’因爲具有異向性，關於熱膨脹係數及彈性率係面的i 方向爲具有如前述特性値地被控制。 接著說明關於有關本發明的含金屬基板與碳基金屬複 合材料之構造體的製造方法。 本發明的含金屬基板與碳基金屬複合材料之構造體的 製造方法，爲藉由使用銲料的銲接，具體的係在作爲金屬 基板對銅、鋁與碳基金屬複合材料之間，使銲料存在而保 持於高溫，使銲料熔融而流入間隙而使接合層形成，至少 具有在加壓下冷卻的製程，提供作爲彎曲少的散熱甩基板 而合適的含金屬基板與碳基金屬複合材料之構造體。在該 接合層的形成製程加壓條件係非必要，但在冷卻製程，加 壓條件爲必須。 作爲於前述接合的溫度，充分熔解銲料，設定在鋁、 銅基板的降伏應力（Yield Stress)下降、在加壓時能少彎曲 的溫度。通常採用銲料的融點以上的溫度。而且，於關於 本發明的製造方法的銲接方法，在鋁基板的情況，亦包含 藉由依高溫銲錫等的附上銲錫的方法。鋁、銅基板與碳基 金屬複合材料係因爲，已熔解的銲料與複合材料的金屬熔 接，藉由以加壓進入碳基金屬複合材料的空隙的固定 (anchor)效果接合’.所以於鋁基板爲500°C至61(TC、在銅 基板爲500 °C至850 °C的溫度爲理想，而由加壓條件等而 選擇最適溫度爲佳。 特別理想的溫度，在含浸了鋁的碳基金屬複合材料的 -12- 1355680 情況，已含浸的鋁不由該複合材料的組織流出的63 0 °C近 邊成爲最高溫度。在含浸了銅的複合材料的情況，在基板 爲銅的情況，因爲銅的降伏應力而在950°C、在爲鋁的情 況，因相同的理由，在630°C近邊成爲最高溫度。 碳基金屬複合材料係有壓縮破裂強度高、拉伸應力低 的性質。於在加壓下接合的基板的碳基金屬複合材料，在 壓縮方向成爲應力作用的狀態。將元件或構件附上銲錫 時，在碳基金屬複合材料係應力作用於拉伸方向，而即使 在此狀態亦因爲作爲於碳基金屬複合材料壓縮應力已作用 的狀態，接合溫度儘可能高爲最佳。 加壓操作係複合材料的主成分爲難以浸潤金屬的碳， 而且因爲表面粗度大，於銲料熔解間進行爲最佳。 加壓壓力係以鋁基板或銅基板不產生顯著的塑性變形 的範圍的壓力條件，在鋁基板設定爲〇.2MPa至30MPa、 在鋁基板設定爲3MPa至50MPa，而爲了得到彎曲少的基 板，理想爲即使比前述溫度低的壓力亦能接合。 作爲關於本發明的含金屬基板與碳基金屬複合材料之 構造體的構成要素而被使用的碳基金屬複合材料，爲以碳 材料作爲基板而含有金屬成分而成。作爲金屬成分，可舉 出：鎂、鋁、銅、銀及這些的金屬的合金。關於碳基金屬 複合材料，不特別限定，如於碳成分中含有、分散金屬成 分的形態者爲佳，例如：可使用：使金屬成分以高壓或在 真空中含浸至碳材料而得的碳基金屬複合材料（金屬含浸 方式）、藉由混練、鍛造粒狀的碳材料和金屬成分而得的 -13- 1355680 碳基金屬複合材料（粉末燒結方式）、另外，以金屬表面處 理的碳或將碳纖維以局溫局壓成形的複合材料（高溫高壓 方式）等。 而且’可使用記載於日本專利第3351778號公報的包 含黑鉛粒子或碳纖維的碳成形體，於氣孔率35 %以上的碳 材料藉由溶湯锻造鋁、銅或這些的合金而由加壓塡充或使 其含浸而得的碳基金屬複合材料》 有關的碳基金屬複合材料，含有在全材料中容量基準 5 0%以下的金屬成分爲合適。另外，塡充碳材料的空隙或 細孔內的容積的80%以上爲理想。碳基金鳳複合材料的熱_ 傳導率、熱膨脹率、彈性率係依照含有的金屬成分的種 類，而在金屬成分爲銅、銀或這些的合金的情況，可實 現：厚度方向的熱傳導率100 W/m .K以上、熱膨脹率4x 1(T6/°C〜12xlO_6/°C、及面方向的彈性率25GPa以下的複 合材料，另外，在金屬成分爲鋁或鋁合金的情況，可得： 厚度方向的熱傳導率100 W/m . K以上、熱膨脹率4x10 _6/ °C〜8xl(T6/°C、及面方向的彈性率25GPa以下的複合材 料。 碳基金屬複合材料，通常有因爲在多孔質的露出部鍍 覆不良或在氣密試驗產生誤差。作爲其對策，將碳基金屬 複合材料收納於鋁、銅基板的座孔部，將基板表面及碳基 金屬複合材料的全表面，以金屬箔被覆、或於端部使用銲 料等而以金屬箔被覆成爲必要。 在關於本發明的含金屬基板與碳基金屬複合材料之構 -14- 1355680 造體，爲了搭載矽等的半導體或電子構件，或者爲了防 融’以如完成鎳鍍覆等於構造體表面爲佳，另外，如有必 要則可提供已接合陶瓷電路的前述構造體。 於第1圖表示關於本發明的含金屬基板與碳基金屬複 合材料之構造體的基本構造的具體例。圖中，在爲金屬基 板的鋁或銅基板4的上面，經由銲料3,而接合碳基金屬 複合材料3的構造體爲有關本發明的含金屬基板與碳基金 屬複合材料之構造體A。於第1圖，表示於碳基金屬複合 材料3的上面經由銲錫2而搭載由矽元件或陶瓷基板1所 構成的電子機器的構成。 第2圖爲在第1圖表示的含金屬基板與碳基金屬複合 材料之構造體3的上面以金屬箔5被覆的構成。 第3圖爲關於本發明的碳基金屬複合材料構造體的向 CPu蓋（cap)的適用例，鋁或銅基板4和碳基金屬複合材 料3爲經由銲料3,而接合。 另外，第4圖爲，將已接合於銘或銅基板4的框內的 滕基金屬複合材料3的上下面，經由銲料3,而以金屬箔5 被覆的構造體的剖面圖。 第5圖爲，例示關於本發明的含金屬基板與碳基金屬 複合材料之構造體的製造用熱壓爐內的各單元的基本配置 _。圖中’ A爲有關本發明的金屬基板，於其上下各個配 慶間隔物7’對受台8，藉由壓頭（ram)6而以所定的條件 加壓。 -15- 1355680 實施例 以下，關於本發明藉由實施例及比較例更具體的說 明。當然本發明係不由實施例等而被限定》 而且，對含金屬基板與碳基金屬複合材料之構造體等 的性能評估係使用以下表示的測定方法。 (η彎曲測定 使用三次元非接觸雷射測量器（SIGMA光機公司 售’使用COM S公司製三次元形狀側程式），測定試料片 的碳基金屬複合材料側的對角線上的凸部。 (2)熱傳導率 熱傳導率係以熱擴散率與比熱及密度之積而求出。熱 擴散率爲藉由雷射閃光測定法（Laser Flash Method)，使用 真空理工公司製TC-7000，在25 °C測定。另外，作爲照射 光使用紅寶石雷射光（激發電壓2.5 kV、均勻濾鏡及消光據 鏡1片）。 (3 )熱膨脹率 使用max science公司製熱分析儀〇〇1、TD-5 020，測 定由室溫至300°C的熱膨脹率。 實施例1 各個準備50mmx50mm的A:銅箔厚度0.02mm、B: 含浸銅於一方向碳纖維碳複合材料的製品（尖端材料公司 製SZ500)厚度〇.5mm及C:銅C1020、厚度2mm。作爲 接合層，將組合了錫箔〇 · 〇 1 m m和銅箔〇 · 〇 2 m m的金屬箔 -16- 1355680 插入A、B及B'C間，設置於熱壓機內。在真空氣氛、 溫度80(TC保持30分鐘，在保持結束時2 0MPa加壓、冷 卻。試作品的彎曲，以複合材料側作爲凸出，大約在50x 50mm的對角線上爲0.05mme 實施例2 各個準備50mmx50mm的A :銅箔厚度0.02mm、B ·· 含浸銅於一方向碳纖維碳複合材料的製品（尖端材料公司 製SZ500)厚度1mm及C:銅C1020、厚度1mm的A、B 及C。作爲接合層，將組合了錫箔〇.‘〇1 mm和銅箔0.02 mm 的金屬箔插入A、B及B、C間，設置於熱壓機內。在真 空氣氛、溫度800 °C保持30分鐘，在保持結束時以 20MPa加壓，接著冷卻而得到的試作品的彎曲，以複合材 料側作爲凸出，大約在 50mm X 50mm的對角線上爲 0.12mm ° 以6 00倍觀察組織剖面時，複合材料中的銅和銲料及 銅基板爲一體化，並無在接合面的破裂、空隙等的缺陷》 另外’在將同試作品置於氮氣中、700 °C、2小時再加 熱、冷卻後的外觀觀察，未見銅箔、基板的剝落等的破壞 及彎曲量增大。 實施例3 2分割在實施例2試作的試作品，在各個的試作品的 銅箔上中央部設置附上銀銲料BAg-7於底部的科伐鐵鎳 •17- 1355680 銘（kovar)製法蘭盤（flange )(外部尺寸 12.7mmx20.8mm、 板厚1mm)，放置約2kg的重物而在760。(：接合。在銅基 板側的30x20mm的對角線上的彎齒爲0.02mm，在法蘭盤 接合前後的彎曲彎化幾乎沒有。將法蘭盤已接合的相同試 作品置於加熱至3 50°C的加熱板（hot plate)上5分鐘，在 熱容量大的鐵製台（常溫）進行了 10次10分鐘的簡易熱循 環試驗，未發現法蘭盤的剝落。 如以上的，由於關於本發明的含金屬基板與碳基金屬 複合材料之構造體可接合科伐鐵鎳鈷（kovar)製法蘭盤（在 3 0°(:〜40°C時，熟膨脹係數約-Sppm/t )，以及即使在簡易 熱循環試驗亦不破壞，證明有熱應力緩和作用。 實施例4 各個準備50mmx50mm的B:含浸鋁於碳複合材料的 製品（尖端材料公司製SZ300)厚度1mm及C:鋁A1050厚 度3 mm。將作爲接合層的A4 047 (A1合金。以下相同。）， 0.3 mm的薄片插入B、C間，設置於熱壓機內。在真空氣 氛、溫度600它保持30分鐘，在保持結束時以15MPa加 壓、冷卻。試作品的彎曲係以複合材料側作爲凸出，大約 在50mmx50mm的對角線上爲0.03mm。 實施例5 各個準備50mmx50mm的A :氧化鋁96%基板、厚度 0_ 6mm、B:含浸鋁於碳材料的製品（尖端材料公司製 -18- 1355680 SZ300)厚度0.5mm及C:鋁A1050厚度3mm。將作爲接 合層的A4047’ 0.3mm的薄片插入A、B間及B、C間， 設置於熱壓機內。在真空氣氛、溫度60(TC保持30分 鐘，在保持結束時以15MPa加壓、冷卻。試作品的彎曲 係以氧化鋁側作爲凸出，大約在50mmx50mm的對角線上 爲0.15mm。將同試作品置於加熱至350°C的加熱板（hot plate)上5分鐘，在熱容量大的鐵製台（常溫）進行了 1〇次 10分鐘的簡易熱循環試驗，未發現異常。另外彎曲量在 循環試驗前後未變化。 如以上的，由於關於本發明的含金屬基板與碳基金屬 複合材料之構造體可接合氧化鋁基板（在RT-800°C時，熱 膨脹係數約8PPm/°C )，以及即使在簡易熱循環試驗亦不 破壞，證明有熱應力緩和作用。 比較例1 各個準備50mmx50mm的B:含浸鋁於碳材料的製品 (尖端材料公司製SZ3 00)厚度〇.5mm及C:鋁A 1 050厚度 3mm。將作爲接合層的A4047，0.3mm的薄片插入B、c 間，搭載10Kg的重物，在氮氣氣氛、溫度5951保持30 分鐘的條件接合。試作品的彎曲係以複合材料側作爲凸 出’大約在50mmx50mm的對角線上爲〇_2mm。檢査後如 由試作品的端部的撕下搬的簡單的剝離。 比較例2 -19- 1355680 各個準備50mmx50mm的A :氧化鋁96%基板、厚度 0.6mm及 C :鋁 A 1 05 0厚度 3mm。將作爲接合層的 A4047’ 0.3mm的薄片插入A、C間，設置於熱壓機內， 在氮氣氣氛、溫度595°C保持30分鐘，在保持結束時以 1 5 MPa加壓。試作品的彎曲係以氧化鋁側作爲凸出，大約 在50mmx50mm的對角線上成爲超過〇.3mm(無法測量）， 氧化鋁基板產生裂縫。 比較例3 - 各個準備5〇111111><5〇111111的八：氧化銘—9 6%基板、厚度 0.6 mm、B:含浸鋁於碳材料的製品（尖端材料公司製 SZ300)厚度0.5mm及C:鋁A1050厚度3mm。將作爲接 合層的A4047，0.3mm的薄片插入A、B間及B、C間， 設置於熱壓機內。在氮氣氣氛、溫度620 °C保持30分 鐘，在保持結束時以50MPa加壓、冷卻。厚度3mm的鋁 基板左右膨脹〇.3mm以上，氧化鋁及複合材料半融解， 沈入鋁基板而變形。 比較例4 代替加壓條件20MPa成爲0.04MPa以外，全部依與 實施例2相同的條件相同的條件及操作而調製試作品。試 作品的彎曲係以複合材料側作爲凸出，大略在50mmx 50mm的對角線上超過0.15mm。中央部接合，但四角不接 合。 •20- 135-5680 比較例5 代替加壓條件15MPa成爲OMPa以外，全部依與實施 例4相同的條件相同的條件及操作而調製試作品。試作品 的彎曲係以複合材料側作爲凸出，大略在50mmx50mm的 對角線上超過〇.2mm。中央部接合，但四角不接合。 -21 - 1355680 (mm)租if-I- § (p)Mii u1355680 IX. Description of the Invention [Technical Field of the Invention] The present invention relates to a joint structure of a metal substrate and a metal-based metal composite (MICC: Metal Impregnated Carbon Composites) and a method for producing the joint structure. : a structure in which a metal substrate made of copper or metal and a carbon-based metal composite material are joined by solder, a 1C (semiconductor integrated circuit) structure using the structure, or an electronic circuit including the 1C package And a method of manufacturing the structure. [Prior Art] A high-speed, high-concentration semiconductor has a very high heat generation density, and is suitable for efficient heat removal, and is suitable for heat dissipation by rapidly dissipating heat by heat-dissipating aluminum and copper heat-dissipating substrates. However, because the thermal expansion coefficient of the semiconductor or the ceramic substrate used for the semiconductor circuit is 4 to 8 ppm/°c, the thermal expansion coefficient of aluminum and copper is larger than 16 to 23 PPm/°C, which is related to the thermal expansion coefficient. The difference is that high thermal stress is generated in the bonding layer and cannot be simply bonded. The first countermeasure is to select a heat-dissipating substrate having a small thermal expansion coefficient, and a combination of high thermal conductivity, such as tantalum carbide, tungsten, molybdenum or the like having a small thermal expansion coefficient. Copper 'aluminum metal, which provides materials with a thermal expansion coefficient adjusted to 7-10 ppm/1. However, in the case of these materials, the thermal conductivity is 200 to 300 W/m · K in the case of a material using copper, and 150 to 200 W/m in the case of a material using aluminum, compared to copper, The aluminum monomer has a low thermal conductivity of 1355680 or more and 20% or more. In addition, since the Young's modulus of the substrate is high, bonding to bismuth, aluminum nitride, or the like having a thermal expansion coefficient of 4 PPm/°C occurs in the bonding layer. The thermal stress becomes large, and the problem of difficulty in joining in a large area. The second countermeasure is to use a resin or solder having a low modulus of elasticity in the bonding layer, and to relax the thermal stress generated by the difference in thermal expansion coefficient. However, the disadvantage is that the thermal conductivity of the resin and the solder is lower than 1 W/m·K, the number is 10 W/m·K, and because the fracture stress is small, a thick bonding layer becomes necessary, and as a result, the heat of the bonding layer is obtained. The impedance becomes larger. - In addition, it is pointed out that in the case of a resin, hygroscopicity and heat resistance are low, and in the case of solder, the yield stress in the practical temperature range is low, and it is easy to cause thermal fatigue and the like. At present, in the widely used heat dissipation system for electronic equipment, it has been a problem to improve the thermal conductivity of the bonding layer by reducing or reducing the thermal stress caused by the difference in thermal expansion coefficient. Moreover, in the present specification, the term "thermal stress relaxation effect" means that in the case of joining two materials having different thermal expansion coefficients, the stress generated at the joint interface is because the thermal expansion coefficients of the two materials are known and the materials are The elastic modulus is proportional to the stress, and the stress generated by the material having a low modulus of elasticity becomes small. Even if the thermal expansion coefficient is large, the materials which are different can be joined, and the thermal fatigue caused by repeated heating and cooling can be withstood. In view of the above, the present inventors have proposed a carbon-based metal composite material obtained by pressurizing or impregnating a metal in a pore of a carbon material such as black lead (for example, refer to Japanese Patent No. 3351778). The carbon-based metal composite 1355680 composite material has a high thermal conductivity and a thermal expansion coefficient as compared with a material having a skeleton such as tantalum carbide, tungsten or molybdenum, and has a low modulus of elasticity. In order to alleviate the thermal stress generated in the bonding layer such as solder, a material which can improve the above problems has been found, but the inclusion is: a brittleness and a low mechanical strength. As a countermeasure, the inventors have grasped: A carbon-based metal composite material having a thickness of 1 mm in a shroud is applied, and solder is bonded to a copper or a substrate to 'join a semiconductor element at a low temperature soldering or the like' but a thermal expansion of the carbon-based metal composite material The coefficient is 4 ppm/〇c ～10 ppm/°c ' copper is 16 ppm/t, and the aluminum is 23 ppm/〇c is large, and the substrate after solder bonding is convex on the composite side. When the bending occurs, there is a problem that the post-process such as the case where the crucible is mounted is difficult. It is eager to develop a heat-dissipating material with a small amount of bending and strength by applying a carbon material having a thermal stress relaxation effect under the relevant circumstances. [Patent Document 1] Japanese Patent No. 3 3 5 1 77 8 [Problem to be Solved by the Invention] Therefore, in view of the development situation described above, the problem of the invention is to provide a crucible having a small thermal expansion coefficient. In the surface of the electronic device such as a ceramic substrate, the carbon-based metal composite material exhibits a thermal stress relaxation effect, and a metal-containing substrate and a carbon-based substrate in a state in which the number of copper and aluminum close to the substrate metal is applied to the strength and thermal conductivity is small. A structure of a metal composite material and a method of producing the same. 1355680 [Means for Solving the Problem] In order to solve the above problems, the inventors of the present invention have focused on the result of focusing on: a metal substrate made of copper or aluminum and a carbon-based metal composite material having a specific thickness. Bonding under specific conditions, such as utilizing the low elasticity of the carbon-based metal composite material, can provide a structure of a metal-containing substrate and a carbon-based metal composite material which suppresses the occurrence of bending, and according to this knowledge, the present invention is completed. According to the first aspect of the invention, there is provided a structure comprising a metal substrate and a carbon-based ruthenium composite material, comprising: a metal substrate; and a carbon-based metal composite welded to the metal substrate; material. According to a second aspect of the invention, a method for producing a structure including a metal substrate and a carbon-based metal composite material includes a metal substrate and a carbon-based metal composite material welded to the upper surface of the metal substrate. A method for producing a metal-containing substrate and a carbon-based metal composite material, wherein a solder is present between the metal substrate and the carbon-based metal composite material, and is heated and held at a temperature higher than a melting point of the solder. At least under pressure, a process including cooling is performed. [Effect of the invention] The structure of the metal-containing substrate and the carbon-based metal composite material of the present invention, as described above, can be provided on the surface of the carbon-based metal composite material. In the case of an electronic device such as a crucible or a ceramic substrate having a small thermal expansion coefficient, the thermal stress relaxation effect of the carbon-based metal composite material is exerted, and the electrons of the copper and aluminum which are close to the substrate metal are applied in strength and thermal conductivity. The heat sink substrate for the machine. Further, according to the manufacturing method of the above-described structure of the present invention, by setting the bonding conditions to a high temperature and a high pressure, it is possible to efficiently manufacture the heat-dissipating substrate in which the amount of warpage is suppressed. [Embodiment] The present invention relates to a metal substrate made of a metal foil, a plate material or a block, and a carbon-based metal composite material having a thickness of 0.1 mm to 2 mm which is bonded to the upper surface of the metal substrate. As a more preferable embodiment, the following (1) to (5) are included. (1) A carbon-based metal composite material having a thickness of l1 to 2 inm and a metal-containing substrate for heat dissipation of an electronic device and a carbon-based metal composite material formed by bonding a copper or aluminum substrate on the underside of the composite material via solder A structure for exothermic electronic equipment. (2) a copper foil sheet, and a carbon-based metal composite material having a thickness of 0.1 mm to 2 mm bonded to the upper surface of the copper foil sheet via a static material, and a copper or the like bonded to the upper surface of the composite material via solder A metal-containing substrate for heat dissipation of an electronic device composed of an aluminum substrate and a carbon-based metal composite material; a structure for exothermic heat of a sub-machine. (3) bonding a carbon-based metal composite material having a thickness of 0.1 mm to 2 mm on the lower surface of the ceramic insulating substrate such as alumina, and a copper or gold base & bonding to the upper surface via solder under the composite material; m -9- 1355680 A structure for radiating heat of an electronic device containing a metal substrate and a carbon-based metal composite for heat dissipation of an electronic device. (4) A carbon-based metal composite material having a thickness of l.lmin to 2 mm is accommodated in a recess of a copper or aluminum substrate, and a copper or aluminum foil or a substrate is bonded to the upper and lower surfaces of the composite material via solder, and the composite material is made of metal. A structure for an electronic device for heat dissipation using a metal-containing substrate and a carbon-based metal composite material for heat dissipation of an electronic device. (5) a metal substrate, and a carbon-based metal composite material having a thickness of 0 mm to 2 mm joined to the upper surface of the metal substrate via solder, and a top surface of the carbon-based metal composite material bonded to the underlying germanium element via solder. The electronic device heat dissipation structure for a metal-containing substrate and a carbon-based metal composite material for heat dissipation of an electronic device. As the structure of the metal-containing substrate and the carbon-based metal composite material of the present invention and the metal substrate of the structure, copper, aluminum or each of these alloys is suitable. The form of the metal substrate is not particularly limited, and a sheet, a plate or a block may be used. The thickness of the metal substrate can be arbitrarily determined according to the structure of the electronic device to which the structure is applied, and can be selected from the range of 0.5 mm to 5 mm, preferably 1 mm to 3 mm, as the constituent element of the structure. A hard solder having a melting point of 450 ° C or higher and a soft solder having a melting point of 450 ° C or less can be used. Examples of the hard solder include silver solder, copper solder, nickel solder, and the like, and soft aluminum solder and the like, and solder for aluminum bonding. (Example: almit, AM-3 50, etc.). Solder is a representative of soft solder, and a Pb-Sn-based alloy or the like is used. For the structure of the present invention, a solder having a melting point of 35 CTC or more is suitable, and a soft solder such as soft aluminum -10- 1355680 solder or more preferably a hard solder can be used. In particular, it is a metal of the same kind as the metal containing the carbon-based metal composite or an alloy having a high thermal conductivity and high toughness. In the structure of the present invention, the welding of the molten metal into the gap is performed by melting the solder, and the metal of the molten metal substrate and the carbon-based metal composite material is not obtained by bonding. Further, as a substitute material for the solder, a metal foil such as an aluminum foil, a tin foil, a copper foil or a silver foil may be laminated and used. In the structure of the metal-containing substrate and the carbon-based metal composite material of the present invention, the solder is welded to the metal in the carbon-based metal composite material to become "integrated" by invading the void of the composite material, so-called The anchor effect has the effect of enhancing the integration of the constituent elements. In the case of the structure of the metal-containing substrate and the carbon-based metal composite according to the present invention, when the thickness of the entire structure of the carbon-based metal composite material and the copper or aluminum substrate is 1 mm or more, the carbon-based metal composite is used. The ratio of the thickness of the metal substrate of the material is about 2 or more 'ideally 1 to 3 or more for the metal substrate. In the relevant ratio, the bending amount of the structure treated with the aforementioned temperature and pressure is controlled within 〇.15 mm on the diagonal of 50 mm x 50 mm, and the particularly desirable amount of bending is controlled on the diagonal of 50 mm x 50 mm. Within 5mm. The structure of the metal-containing substrate and the carbon-based metal composite according to the present invention has a property of being thermally stress-relieved in the mounted portion, high in heat conduction, and small in thermal expansion coefficient. As the carbon-based metal composite material, those having a thermal conductivity of 100 W/m·Κ or more and a thermal expansion coefficient of 4 ppm/t: 〜15 ppm/»c, -11 - 1355680 and an elastic modulus of 25 GPa or less are selected. The related carbon-based metal composite material is controlled to have the same characteristics as the aforementioned i-direction with respect to the coefficient of thermal expansion and the modulus of elasticity. Next, a method of producing a structure relating to the metal-containing substrate and the carbon-based metal composite material according to the present invention will be described. The method for producing a structure of a metal-containing substrate and a carbon-based metal composite according to the present invention is a solder by soldering, specifically, as a metal substrate between copper, aluminum and a carbon-based metal composite material, so that solder exists. While maintaining the temperature at a high temperature, the solder is melted and flows into the gap to form the bonding layer, and at least has a process of cooling under pressure, and a structure of a metal-containing substrate and a carbon-based metal composite which is suitable as a heat-dissipating substrate having less bending is provided. . The process of forming the bonding layer in the bonding layer is not necessary, but in the cooling process, the pressing conditions are necessary. As the temperature at the bonding, the solder is sufficiently melted, and the temperature at which the yield stress of the aluminum or copper substrate is lowered and the bending is less during pressurization is set. The temperature above the melting point of the solder is usually used. Further, in the soldering method of the manufacturing method of the present invention, in the case of the aluminum substrate, a method of attaching solder by high-temperature solder or the like is also included. Aluminum, copper substrate and carbon-based metal composite material because the molten solder is welded to the metal of the composite material, and is bonded by an anchor effect of pressurizing into the void of the carbon-based metal composite material. It is preferably from 500 ° C to 61 (TC, a temperature of from 500 ° C to 850 ° C on a copper substrate, and an optimum temperature is selected by a pressurization condition, etc. A particularly desirable temperature is a carbon base impregnated with aluminum. In the case of metal composite material -12-1355680, the impregnated aluminum does not become the highest temperature at the near edge of 63 0 °C from the structure of the composite material. In the case of a composite material impregnated with copper, in the case where the substrate is copper, because The copper stress at 950 ° C and the case of aluminum are the highest temperature at 630 ° C for the same reason. The carbon-based metal composite has a high compression fracture strength and a low tensile stress. The carbon-based metal composite material of the substrate bonded under pressure acts in a state of stress in the compression direction. When the component or the member is attached with the solder, the stress acts on the carbon-based metal composite material in the stretching direction. In this state, as a state in which the compressive stress of the carbon-based metal composite has been applied, the joining temperature is as high as possible. The main component of the pressurizing operation system is carbon which is hard to wet the metal, and because of the surface roughness. The pressure is preferably between the melting of the solder. The pressing pressure is a pressure condition in which the aluminum substrate or the copper substrate does not cause significant plastic deformation, and the aluminum substrate is set to 2 MPa to 30 MPa, and the aluminum substrate is set to 3 MPa. In order to obtain a substrate having a small amount of curvature, it is preferable to be bonded even at a pressure lower than the above-described temperature. The carbon-based group used as a constituent of the structure of the metal-containing substrate and the carbon-based metal composite according to the present invention is used. The metal composite material is a metal component containing a carbon material as a substrate. Examples of the metal component include magnesium, aluminum, copper, silver, and an alloy of these metals. The carbon-based metal composite material is not particularly limited. For example, it is preferable to contain or disperse a metal component in a carbon component, for example, it can be used: a metal component is contained at a high pressure or in a vacuum. a carbon-based metal composite material (metal impregnation method) obtained by a carbon material, a-13-1355680 carbon-based metal composite material obtained by kneading, forging a granular carbon material, and a metal component (powder sintering method), and A metal-treated surface-treated carbon or a composite material (high-temperature high-pressure method) in which a carbon fiber is formed by local pressure, and a carbon molded body containing black lead particles or carbon fibers described in Japanese Patent No. 3351778 can be used. A carbon-based metal composite material obtained by forging or impregnating a carbon material having a porosity of 35% or more by forging molten aluminum or copper or an alloy thereof is contained in the entire material. It is preferable that the metal component of the medium capacity standard is 50% or less, and it is preferable that the volume of the carbon-filled material is 80% or more of the volume in the pores. The heat conductivity, thermal expansion coefficient, and elastic modulus of the carbon fund phoenix composite material are as follows: in the case where the metal component is copper, silver, or an alloy of these, the thermal conductivity in the thickness direction is 100 W. /m .K or more, a thermal expansion coefficient of 4x 1 (T6/°C to 12xlO_6/°C, and a composite material having an elastic modulus of 25 GPa or less in the plane direction, and in the case where the metal component is aluminum or an aluminum alloy, a thickness is obtained: The thermal conductivity of the direction is 100 W/m. K, the thermal expansion coefficient is 4x10 _6/ °C~8xl (T6/°C, and the elastic modulus of the surface area is 25 GPa or less. The carbon-based metal composite material is usually because of the porous The exposed portion of the material is poorly plated or has an error in the airtight test. As a countermeasure, the carbon-based metal composite material is housed in the hole portion of the aluminum or copper substrate, and the entire surface of the substrate and the carbon-based metal composite material are It is necessary to coat the metal foil or to coat the metal foil with the solder at the end. The structure of the metal-containing substrate and the carbon-based metal composite according to the present invention is in the form of a semiconductor or a semiconductor. The member, or for the purpose of preventing melting, is preferably such that the completion of nickel plating is equal to the surface of the structure, and if necessary, the aforementioned structure of the bonded ceramic circuit can be provided. Fig. 1 shows a metal-containing substrate relating to the present invention. Specific examples of the basic structure of the structure of the carbon-based metal composite material. In the figure, the structure in which the carbon-based metal composite material 3 is bonded via the solder 3 on the upper surface of the aluminum or copper substrate 4 of the metal substrate is related to the present invention. The structure A of the metal-containing substrate and the carbon-based metal composite material is shown in Fig. 1 . The structure of the electronic device including the tantalum element or the ceramic substrate 1 is mounted on the upper surface of the carbon-based metal composite material 3 via the solder 2 . Fig. 2 is a view showing a structure in which the metal substrate 5 and the carbon-based metal composite material structure shown in Fig. 1 are covered with a metal foil 5. Fig. 3 is a view showing the orientation of the carbon-based metal composite material structure of the present invention. As an example of application of the CPu cap, the aluminum or copper substrate 4 and the carbon-based metal composite 3 are joined via the solder 3. Further, Fig. 4 is a view of the inside of the frame which has been bonded to the inscription or the copper substrate 4. Base metal A cross-sectional view of a structure in which the metal foil 5 is coated on the upper and lower surfaces of the composite material 3 via the solder 3. Fig. 5 is a view showing the heat of manufacture of the structure of the metal-containing substrate and the carbon-based metal composite material according to the present invention. Basic configuration of each unit in the furnace. In the figure, 'A is a metal substrate according to the present invention, and each of the upper and lower partitions 7' is opposite to the receiving table 8 by a ram 6 -15- 1355680 EMBODIMENT Hereinafter, the present invention will be more specifically described by way of examples and comparative examples. Of course, the present invention is not limited by the examples and the like. Moreover, the metal-containing substrate is compounded with a carbon-based metal. The performance evaluation of the structure or the like of the material uses the measurement method shown below. (The η bending measurement was performed using a three-dimensional non-contact laser measuring instrument (a ternary shape side program manufactured by COM S Co., Ltd.), and the convex portion on the diagonal side of the carbon-based metal composite material side of the sample piece was measured. (2) Thermal conductivity The thermal conductivity is obtained by the product of the thermal diffusivity and the specific heat and density. The thermal diffusivity is determined by the Laser Flash Method using TC-7000 manufactured by Vacuum Technology Co., Ltd., at 25 The measurement was carried out at ° C. In addition, ruby laser light (excitation voltage 2.5 kV, uniform filter and matt mirror) was used as the irradiation light. (3) The thermal expansion rate was measured by the thermal analyzer max1, TD-5 of Max Science Corporation. 020, the coefficient of thermal expansion from room temperature to 300 ° C was measured. Example 1 Preparation of 50 mm x 50 mm A: Copper foil thickness 0.02 mm, B: Thickness of a product impregnated with copper in one direction carbon fiber carbon composite (SZ500 manufactured by Cutting Edge Materials Co., Ltd.) 5.5mm and C: copper C1020, thickness 2mm. As a bonding layer, a metal foil-16-1355680 combining tin foil 〇·〇1 mm and copper foil 〇·〇2 mm is inserted between A, B and B'C. In a hot press, in a vacuum atmosphere, Temperature 80 (TC holds for 30 minutes, pressurizes and cools at 20 MPa at the end of the hold. The bending of the test piece is convex on the side of the composite material, 0.05 mme on the diagonal of about 50 x 50 mm. Example 2 Preparation of 50 mm x 50 mm for each A: A copper foil having a thickness of 0.02 mm, B··a product impregnated with copper in one direction (SZ500, manufactured by Advanced Materials Co., Ltd.) having a thickness of 1 mm and C: copper C1020 and a thickness of 1 mm, A, B and C. Insert a metal foil with a combination of tin foil 〇.'〇1 mm and copper foil 0.02 mm between A, B, B, and C, and place it in a hot press. Hold in a vacuum atmosphere at a temperature of 800 °C for 30 minutes. The bending of the test piece obtained by pressurizing at 20 MPa and then cooling was carried out with the composite material side as a projection, and the copper in the composite material was observed when the microstructure profile was observed at a cross-section of about 50 mm X 50 mm on the diagonal of 0.12 mm ° and 600 times. It is integrated with solder and copper substrate, and there are no defects such as cracks and voids on the joint surface. In addition, the appearance of the same test piece was placed in nitrogen gas at 700 ° C for 2 hours and then heated and cooled. See the destruction of copper foil, substrate peeling, etc. And the amount of bending is increased. Example 3 2 The test piece which was tried in Example 2 was divided, and the center of the copper foil of each test piece was placed with the silver solder BAg-7 attached to the bottom of the base of the Kovar nickel. 17-1355680 Flange (outer size 12.7mmx20.8mm, plate thickness 1mm) made of kovar, placed about 2kg weight at 760. (: Joining. The bending tooth on the 30x20mm diagonal line on the copper substrate side is 0.02 mm, and there is almost no bending and bending before and after the flange is joined. The same test piece in which the flange has been joined is heated to 3 50. On a hot plate of °C for 5 minutes, 10 times of simple thermal cycle test was carried out for 10 minutes on an iron table (normal temperature) with a large heat capacity, and no peeling of the flange was observed. The structure of the metal-containing substrate and the carbon-based metal composite material of the invention can be joined to a flange made of Kovar (in the case of 30 ° (: 40 ° C, the coefficient of expansion of the cook is about -Sppm / t), And even if it is not damaged in the simple heat cycle test, it proves to have thermal stress relaxation effect. Example 4 Preparation of 50 mm x 50 mm B: Products impregnated with aluminum in carbon composite (SZ300 manufactured by Cutting Edge Materials Co., Ltd.) Thickness 1 mm and C: A10 thickness of aluminum A1050 3 mm. A4 047 (A1 alloy. The same applies below) as a bonding layer, a 0.3 mm sheet is inserted between B and C, and placed in a hot press. It is kept in a vacuum atmosphere at a temperature of 600 for 30 minutes. Pressurize and cool at 15 MPa. The curve is convex on the side of the composite material, which is about 0.03 mm on the diagonal of 50 mm x 50 mm. Example 5 Each preparation 50 mm x 50 mm A: Alumina 96% substrate, thickness 0-6 mm, B: Products impregnated with aluminum in carbon material ( -18-1355680 SZ300 manufactured by Advanced Materials Co., Ltd.) has a thickness of 0.5 mm and C: aluminum A1050 has a thickness of 3 mm. A 4047' 0.3 mm sheet as a bonding layer is inserted between A and B and between B and C, and is placed in a hot press. In a vacuum atmosphere and temperature 60 (TC was held for 30 minutes, at the end of the holding, the pressure was 15 MPa, and the cooling was performed. The bending of the test piece was convex on the alumina side, and was about 0.15 mm on the diagonal of 50 mm x 50 mm. The work was placed on a hot plate heated to 350 ° C for 5 minutes, and a simple thermal cycle test was performed for 1 minute and 10 minutes on an iron table (normal temperature) having a large heat capacity, and no abnormality was observed. There is no change before and after the cycle test. As described above, since the structure of the metal-containing substrate and the carbon-based metal composite material according to the present invention can be bonded to the alumina substrate (the thermal expansion coefficient is about 8 ppm/° C at RT-800 ° C), And even in the simple thermal cycle test It was not destroyed and proved to have thermal stress relaxation effect. Comparative Example 1 Each preparation of 50 mm x 50 mm B: a product impregnated with aluminum in carbon material (SZ3 00 manufactured by Cutting Edge Materials Co., Ltd.) thickness 〇.5 mm and C: aluminum A 1 050 thickness 3 mm. As A4047 of the bonding layer, a sheet of 0.3 mm was inserted between B and c, and a weight of 10 kg was placed, and bonded under a nitrogen atmosphere at a temperature of 5951 for 30 minutes. The bending of the trial work is based on the side of the composite material, which is 〇_2 mm on the diagonal of approximately 50 mm x 50 mm. After the inspection, a simple peeling off by the tearing of the end of the trial work. Comparative Example 2 -19- 1355680 A 50 mm x 50 mm A: alumina 96% substrate, thickness 0.6 mm and C: aluminum A 1 05 0 thickness 3 mm. A 4047'-0.3 mm sheet as a bonding layer was placed between A and C, placed in a hot press, held in a nitrogen atmosphere at a temperature of 595 ° C for 30 minutes, and pressurized at 15 MPa at the end of the holding. The bending of the trial works was convex with the alumina side, which was more than 〇3 mm (not measurable) on the diagonal of 50 mm x 50 mm, and cracks occurred in the alumina substrate. Comparative Example 3 - Each preparation of 5〇111111><5〇111111 8: Oxidation-- 9 6% substrate, thickness 0.6 mm, B: product impregnated with aluminum in carbon material (SZ300 manufactured by Advanced Materials Co., Ltd.) thickness 0.5 mm and C: Aluminum A1050 has a thickness of 3 mm. A4047, a 0.3 mm sheet as a bonding layer was inserted between A and B, and between B and C, and placed in a hot press. The mixture was kept at a temperature of 620 ° C for 30 minutes in a nitrogen atmosphere, and pressurized and cooled at 50 MPa at the end of the holding. The aluminum substrate having a thickness of 3 mm is expanded to the left and right sides by more than 3 mm, and the aluminum oxide and the composite material are partially melted and sunk into the aluminum substrate to be deformed. Comparative Example 4 A test piece was prepared under the same conditions and operation as those of Example 2 except that the pressurization condition of 20 MPa was 0.04 MPa. The bending of the test piece is convex on the side of the composite material, roughly over 0.15 mm on the diagonal of 50 mm x 50 mm. The central part is joined, but the four corners are not joined. • 20-135-5680 Comparative Example 5 A test piece was prepared under the same conditions and operation as those of Example 4 except that the pressurization condition of 15 MPa was changed to OMPa. The bending of the trial works is convex on the side of the composite material, which is roughly over 〇.2 mm on the diagonal of 50 mm x 50 mm. The central part is joined, but the four corners are not joined. -21 - 1355680 (mm) rent if-I- § (p)Mii u
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9.0SV Z o.uv-u们 SO 60s.o s 寸 s ιΌυ900WCo -22- 1355680 〔產業上的可利用性〕 關於本發明的含金屬基板與碳基金屬複合材料之構造 體’係控制由接合產生的彎曲量、亦改善強度、作爲散熱 材料爲有用的。因而，1C封裝之外，關於電源模組 (Power Module)用基板、雷射二極體用構件（間隔物、載 子）、LED用基板、塑膠PKG用散熱片（heat spreader)、 印刷基板' 換流器（inverter)用基板等廣泛範圍可使用， 特別是有助於作爲電子機器的散熱材料用之要點上爲大。 【圖式簡單說明】 [第1圖]爲表示關於本發明的含金屬基板與碳基金屬 複合材料之構造體的基本構造的槪略圖。 [第2圖]爲碳基金屬複合材料以金屬箱被覆的關於本 發明的含金屬基板與碳基金屬複合材料之構造體的槪略 圖。 [第3圖]爲向CPU蓋的適用槪略_。 [第4圖]爲向金屬框中放入複合材料，以金屬箱被覆 了上下面的構造體槪略圖》 [第5圖]爲關於本發明的含金屬基板與碳基金屬複合 材料之構造體的製造用熱壓爐內的基本配置圖。 【主要元件符號說明】 1矽元件或陶瓷基板 2銲錫 -23- 1355680 3碳基金屬複合材料 3’銲料 4 錯或銅基板 5被覆金屬箔 6壓頭 7間隔物（平板或型板） 8受台 9熱壓爐內 A含金屬基板與碳基金屬複合材料之構造體 -24-9.0SV Z o.uv-u SO 60s.os inch s ιΌυ900WCo -22- 1355680 [Industrial Applicability] The structure of the metal-containing substrate and the carbon-based metal composite of the present invention is controlled by the joint. The amount of bending, the strength is also improved, and it is useful as a heat dissipating material. Therefore, in addition to the 1C package, the power module (Power Module) substrate, the laser diode member (spacer, carrier), the LED substrate, the plastic PKG heat spreader, and the printed substrate ' A wide range of inverters and the like can be used, and in particular, it is advantageous for use as a heat dissipating material for an electronic device. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a schematic view showing a basic structure of a structure of a metal-containing substrate and a carbon-based metal composite material according to the present invention. [Fig. 2] is a schematic view showing a structure of a metal-containing substrate and a carbon-based metal composite material according to the present invention in which a carbon-based metal composite material is covered with a metal case. [Fig. 3] is a suitable strategy for the CPU cover. [Fig. 4] is a schematic view showing a structure in which a composite material is placed in a metal frame and a metal case is covered with an upper and lower structure. [Fig. 5] is a structure of a metal-containing substrate and a carbon-based metal composite material according to the present invention. The basic configuration diagram in the hot press furnace for manufacturing. [Main component symbol description] 1矽 component or ceramic substrate 2 Solder-23- 1355680 3 carbon-based metal composite 3' solder 4 wrong or copper substrate 5 coated metal foil 6 indenter 7 spacer (plate or template) 8 subject Structure of A-containing metal substrate and carbon-based metal composite material in stage 9 hot pressing furnace-24-