TWI351072B - - Google Patents

Info

Publication number
TWI351072B
TWI351072B TW096126388A TW96126388A TWI351072B TW I351072 B TWI351072 B TW I351072B TW 096126388 A TW096126388 A TW 096126388A TW 96126388 A TW96126388 A TW 96126388A TW I351072 B TWI351072 B TW I351072B
Authority
TW
Taiwan
Application number
TW096126388A
Other languages
Chinese (zh)
Other versions
TW200811990A (en
Inventor
Yoshihiko Sasaki
Tsutomu Satoyoshi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200811990A publication Critical patent/TW200811990A/en
Application granted granted Critical
Publication of TWI351072B publication Critical patent/TWI351072B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW096126388A 2006-07-20 2007-07-19 Repairing method of electrostatic chuck electrode TW200811990A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006197557A JP5019811B2 (en) 2006-07-20 2006-07-20 Repair method of electrostatic adsorption electrode

Publications (2)

Publication Number Publication Date
TW200811990A TW200811990A (en) 2008-03-01
TWI351072B true TWI351072B (en) 2011-10-21

Family

ID=39042374

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096126388A TW200811990A (en) 2006-07-20 2007-07-19 Repairing method of electrostatic chuck electrode
TW099124917A TW201044496A (en) 2006-07-20 2007-07-19 Repairing method of electrostatic sucking electrode

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099124917A TW201044496A (en) 2006-07-20 2007-07-19 Repairing method of electrostatic sucking electrode

Country Status (4)

Country Link
JP (1) JP5019811B2 (en)
KR (1) KR100943360B1 (en)
CN (2) CN101625954B (en)
TW (2) TW200811990A (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090031955A1 (en) * 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
KR100908227B1 (en) * 2008-01-28 2009-07-20 (주)코리아스타텍 Electrostatic chuck reproducing method of tft fabrication equipment
JP5201527B2 (en) 2008-03-28 2013-06-05 東京エレクトロン株式会社 Electrostatic chuck and manufacturing method thereof
US8291565B2 (en) * 2008-10-10 2012-10-23 Lam Research Corporation Method of refurbishing bipolar electrostatic chuck
JP5193886B2 (en) * 2009-01-14 2013-05-08 株式会社巴川製紙所 Electrostatic chuck device repair method and repair device, and electrostatic chuck device
KR101123968B1 (en) * 2009-12-16 2012-03-23 아이원스 주식회사 Recycle method of electrostatic chuck
JP2014522572A (en) * 2011-06-02 2014-09-04 アプライド マテリアルズ インコーポレイテッド Method for repairing aluminum nitride dielectric in electrostatic chuck
KR101300779B1 (en) * 2011-11-08 2013-08-29 (주) 인광 Electrode reparing method of cvd device for refining polysilicon and repared electrode using the same
KR101652782B1 (en) 2012-02-03 2016-08-31 에이에스엠엘 네델란즈 비.브이. Substrate holder and lithographic apparatus
JP5441019B1 (en) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 Electrostatic chuck
JP6389181B2 (en) * 2012-09-19 2018-09-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ How to bond substrates
TWI497589B (en) * 2012-12-17 2015-08-21 Global Material Science Co Ltd Upper electrode of dry etcing chamber and method for manufacturing the same
KR101506991B1 (en) * 2013-03-22 2015-04-07 (주)티티에스 Method of processing support unit
KR101328492B1 (en) * 2013-04-02 2013-11-13 주식회사 템네스트 Regeneration method of electrostatic chuck using aerosol coating
KR101591455B1 (en) * 2013-12-24 2016-02-03 (주)엘케이솔루션 Electostatic chuck and method for reparing the same
TWI555112B (en) * 2015-02-11 2016-10-21 力晶科技股份有限公司 Semiconductor manufacturing apparatus and method for preventing substrate from breakage
US9999947B2 (en) * 2015-05-01 2018-06-19 Component Re-Engineering Company, Inc. Method for repairing heaters and chucks used in semiconductor processing
JP6435247B2 (en) * 2015-09-03 2018-12-05 新光電気工業株式会社 Electrostatic chuck device and method of manufacturing electrostatic chuck device
WO2017079338A1 (en) 2015-11-02 2017-05-11 Component Re-Engineering Company, Inc. Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same
JP6650313B2 (en) * 2016-03-25 2020-02-19 日本特殊陶業株式会社 Repair method of substrate support member
KR101904275B1 (en) * 2016-06-09 2018-10-05 (주)티티에스 Processing method of substrate supporting apparatus
JP6796531B2 (en) * 2017-03-31 2020-12-09 日本特殊陶業株式会社 How to repair the board holding device
JP7260272B2 (en) * 2018-09-21 2023-04-18 旭化成株式会社 Electrode manufacturing method
CN111383986A (en) * 2018-12-27 2020-07-07 东京毅力科创株式会社 Substrate mounting table and substrate processing apparatus
JP7159942B2 (en) * 2019-03-28 2022-10-25 株式会社村田製作所 Appearance inspection device
CN111564367B (en) * 2020-05-21 2021-05-25 合肥新汇成微电子股份有限公司 Method for processing wafer cracking abnormity before wafer grinding
KR102184705B1 (en) * 2020-06-22 2020-12-01 주식회사 동탄이엔지 Method of repairing of electrostatic chuck
CN113667919A (en) * 2021-08-23 2021-11-19 苏州众芯联电子材料有限公司 Regeneration process for lower electrode of LCD and AMOLED dry etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02301548A (en) * 1989-05-15 1990-12-13 Toshiba Corp Method for repairing material confronting plasma
JP3809010B2 (en) 1998-03-31 2006-08-16 株式会社東芝 Reactor internal structure repair method
JPH11323526A (en) * 1998-05-19 1999-11-26 Babcock Hitachi Kk Method for repairing high hardness sprayed coating
TW466576B (en) * 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
WO2002048421A1 (en) * 2000-12-12 2002-06-20 Tokyo Electron Limited Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
EP1635388A4 (en) * 2003-06-17 2009-10-21 Creative Tech Corp Dipolar electrostatic chuck
JP4402949B2 (en) * 2003-12-26 2010-01-20 株式会社クリエイティブ テクノロジー Regeneration method of bipolar electrostatic chuck
JP2005245157A (en) * 2004-02-27 2005-09-08 Dainippon Ink & Chem Inc Electrostatic attraction device
EP1591561A1 (en) * 2004-04-28 2005-11-02 ALSTOM (Switzerland) Ltd Method for applying a protective coating over a high temperature component

Also Published As

Publication number Publication date
CN101110384A (en) 2008-01-23
KR100943360B1 (en) 2010-02-18
JP2008028052A (en) 2008-02-07
TW200811990A (en) 2008-03-01
CN101625954B (en) 2011-05-11
JP5019811B2 (en) 2012-09-05
KR20080009028A (en) 2008-01-24
CN101625954A (en) 2010-01-13
CN100541756C (en) 2009-09-16
TWI343618B (en) 2011-06-11
TW201044496A (en) 2010-12-16

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