TWI347606B - Magnetic memory and memory cell thereof and method of manufacturing the memory cell - Google Patents

Magnetic memory and memory cell thereof and method of manufacturing the memory cell

Info

Publication number
TWI347606B
TWI347606B TW096132620A TW96132620A TWI347606B TW I347606 B TWI347606 B TW I347606B TW 096132620 A TW096132620 A TW 096132620A TW 96132620 A TW96132620 A TW 96132620A TW I347606 B TWI347606 B TW I347606B
Authority
TW
Taiwan
Prior art keywords
memory cell
memory
manufacturing
magnetic
cell
Prior art date
Application number
TW096132620A
Other languages
English (en)
Other versions
TW200844998A (en
Inventor
Chia Hua Ho
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200844998A publication Critical patent/TW200844998A/zh
Application granted granted Critical
Publication of TWI347606B publication Critical patent/TWI347606B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW096132620A 2007-05-10 2007-08-31 Magnetic memory and memory cell thereof and method of manufacturing the memory cell TWI347606B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/798,160 US7782659B2 (en) 2007-05-10 2007-05-10 Magnetic memory and memory cell thereof and method of manufacturing the memory cell

Publications (2)

Publication Number Publication Date
TW200844998A TW200844998A (en) 2008-11-16
TWI347606B true TWI347606B (en) 2011-08-21

Family

ID=39969364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132620A TWI347606B (en) 2007-05-10 2007-08-31 Magnetic memory and memory cell thereof and method of manufacturing the memory cell

Country Status (3)

Country Link
US (1) US7782659B2 (zh)
CN (1) CN101304038B (zh)
TW (1) TWI347606B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI443656B (zh) * 2009-04-16 2014-07-01 Univ Nat Yunlin Sci & Tech 磁性疊層結構及其製造方法
JP2012015213A (ja) * 2010-06-29 2012-01-19 Sony Corp 記憶素子、記憶素子の製造方法、及び、メモリ
US9070854B2 (en) * 2012-04-27 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Techniques for patterning multilayer magnetic memory devices using ion implantation
KR102374642B1 (ko) * 2015-01-22 2022-03-17 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법
EP3314676A4 (en) * 2015-06-26 2019-02-20 Intel Corporation PERPENDICULAR MAGNETIC MEMORY HAVING SYMMETRIC FIXED LAYERS
TWI606818B (zh) * 2016-12-23 2017-12-01 國立陽明大學 步態活動促進之電動步行輔具及其應用方法
US20210408116A1 (en) * 2020-06-29 2021-12-30 Taiwan Semiconductor Manufacturing Company Limited Memory device including a semiconducting metal oxide fin transistor and methods of forming the same
US11937512B2 (en) * 2021-06-02 2024-03-19 International Business Machines Corporation Magnetic tunnel junction device with air gap

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769122B1 (fr) * 1997-09-29 2001-04-13 Commissariat Energie Atomique Procede pour augmenter la frequence de fonctionnement d'un circuit magnetique et circuit magnetique correspondant
US6172904B1 (en) * 2000-01-27 2001-01-09 Hewlett-Packard Company Magnetic memory cell with symmetric switching characteristics
JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
US6873542B2 (en) * 2002-10-03 2005-03-29 International Business Machines Corporation Antiferromagnetically coupled bi-layer sensor for magnetic random access memory
CN100524531C (zh) * 2002-12-09 2009-08-05 磁旋科技公司 利用磁性写线的mram的存储器
JP4253225B2 (ja) * 2003-07-09 2009-04-08 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP4438375B2 (ja) * 2003-10-21 2010-03-24 Ｔｄｋ株式会社 磁気抵抗効果素子、磁気記憶セルおよび磁気メモリデバイス
JP4074281B2 (ja) * 2004-09-14 2008-04-09 株式会社東芝 磁気ランダムアクセスメモリ

Also Published As

Publication number Publication date
TW200844998A (en) 2008-11-16
CN101304038A (zh) 2008-11-12
CN101304038B (zh) 2010-09-29
US20080278995A1 (en) 2008-11-13
US7782659B2 (en) 2010-08-24

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