TWI340060B - Polishing apparatus and method of polishing work piece - Google Patents

Polishing apparatus and method of polishing work piece

Info

Publication number
TWI340060B
TWI340060B TW093135106A TW93135106A TWI340060B TW I340060 B TWI340060 B TW I340060B TW 093135106 A TW093135106 A TW 093135106A TW 93135106 A TW93135106 A TW 93135106A TW I340060 B TWI340060 B TW I340060B
Authority
TW
Taiwan
Prior art keywords
polishing
work piece
polishing apparatus
polishing work
piece
Prior art date
Application number
TW093135106A
Other languages
English (en)
Other versions
TW200520895A (en
Inventor
Doi Toshiro
Philipossian Ara
Denardis Darren
Original Assignee
Doi Toshiro
Fujikoshi Machinery Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Doi Toshiro, Fujikoshi Machinery Corp filed Critical Doi Toshiro
Publication of TW200520895A publication Critical patent/TW200520895A/zh
Application granted granted Critical
Publication of TWI340060B publication Critical patent/TWI340060B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW093135106A 2003-11-20 2004-11-16 Polishing apparatus and method of polishing work piece TWI340060B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003390677 2003-11-20
JP2003390692 2003-11-20

Publications (2)

Publication Number Publication Date
TW200520895A TW200520895A (en) 2005-07-01
TWI340060B true TWI340060B (en) 2011-04-11

Family

ID=34437005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093135106A TWI340060B (en) 2003-11-20 2004-11-16 Polishing apparatus and method of polishing work piece

Country Status (7)

Country Link
US (2) US7070486B2 (zh)
EP (1) EP1533077B1 (zh)
KR (1) KR101157235B1 (zh)
CN (1) CN100528486C (zh)
DE (1) DE602004003881T2 (zh)
MY (1) MY141996A (zh)
TW (1) TWI340060B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI340060B (en) * 2003-11-20 2011-04-11 Doi Toshiro Polishing apparatus and method of polishing work piece
EP2191346B1 (en) * 2007-08-20 2012-08-08 Double Fusion, Inc. Independently-defined alteration of output from software executable using later-integrated code
JP2014130881A (ja) * 2012-12-28 2014-07-10 Ebara Corp 研磨装置
TWI517935B (zh) * 2013-04-16 2016-01-21 國立台灣科技大學 氣體添加硏磨液的供應系統及其方法
JP6178768B2 (ja) 2014-09-17 2017-08-09 株式会社東芝 品質管理装置およびその管理方法
CN110828345A (zh) * 2019-11-14 2020-02-21 广州市晶鑫光电科技有限公司 一种cob光源颜色均匀控制工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348615A (en) * 1992-10-21 1994-09-20 Advanced Micro Devices, Inc. Selective planarization method using regelation
US5637185A (en) * 1995-03-30 1997-06-10 Rensselaer Polytechnic Institute Systems for performing chemical mechanical planarization and process for conducting same
JPH08276356A (ja) * 1995-04-10 1996-10-22 Honda Motor Co Ltd セラミックスの加工方法及び加工装置
US5618177A (en) * 1995-05-08 1997-04-08 Dove Systems, Inc. Arrangement for feeding pressurized particulate material
US6007406A (en) * 1997-12-04 1999-12-28 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process
US6551174B1 (en) 1998-09-25 2003-04-22 Applied Materials, Inc. Supplying slurry to a polishing pad in a chemical mechanical polishing system
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
JP3895949B2 (ja) * 2001-07-18 2007-03-22 株式会社東芝 Ｃｍｐ用スラリー、およびこれを用いた半導体装置の製造方法
JP4510362B2 (ja) 2001-11-30 2010-07-21 俊郎 土肥 Ｃｍｐ装置およびｃｍｐ方法
TWI340060B (en) * 2003-11-20 2011-04-11 Doi Toshiro Polishing apparatus and method of polishing work piece

Also Published As

Publication number Publication date
US7070486B2 (en) 2006-07-04
KR20050049406A (ko) 2005-05-25
TW200520895A (en) 2005-07-01
US20050113007A1 (en) 2005-05-26
US20060217039A1 (en) 2006-09-28
DE602004003881D1 (de) 2007-02-08
EP1533077A1 (en) 2005-05-25
DE602004003881T2 (de) 2007-05-31
CN100528486C (zh) 2009-08-19
MY141996A (en) 2010-08-16
KR101157235B1 (ko) 2012-06-15
EP1533077B1 (en) 2006-12-27
US7195546B2 (en) 2007-03-27
CN1644317A (zh) 2005-07-27

Similar Documents

Publication Publication Date Title
GB2391188B (en) Method and apparatus for grinding
EP1810321A4 (en) POLISHING DEVICE AND POLISHING METHOD
MY137807A (en) Proximity brush unit apparatus and method
GB2402050B (en) Cleaning apparatus and method
IL176264A0 (en) Apparatus and method for cleaning surfaces
EP1800797A4 (en) APPARATUS AND METHOD FOR POLISHING
SG112993A1 (en) Methods and apparatus for machining components
GB0303422D0 (en) Apparatus and method
AU2003265618A8 (en) Method and apparatus of position location
AU2003265654A8 (en) Tool holder and method
EP1639630A4 (en) POLISHING DEVICE AND POLISHING METHOD
AU2003235890A8 (en) Descaling method and descaling apparatus
MY142412A (en) Polishing composition and polishing method
TWI347245B (en) Method of polishing wafer and wafer polishing apparatus
MY158065A (en) Polishing composition and polishing method
AU2003227987A8 (en) Machining apparatus and methods
SG103938A1 (en) Glass-plate polishing apparatus and method of thereof
TWI340060B (en) Polishing apparatus and method of polishing work piece
GB0312561D0 (en) Apparatus and method of using same
GB0212517D0 (en) Rail grinding apparatus and method
GB0305023D0 (en) Apparatus and method
GB0315475D0 (en) Apparatus and method
GB0313968D0 (en) De-Infestation method and apparatus
GB0323788D0 (en) Apparatus and method of using the same
EP1621517A4 (en) PROCESS FOR MOLECULE CONNECTION AND MOLECULE CONNECTION DEVICE