1339404 九、發明說明： 【發明所屬之技術領域】 本發明涉及用來加工積體電路用的半導體基片或用來加工平板顯示器 用的破璃平板的基片的裝置，尤其涉及一種配置有等離子體約束裝置的等 離子體處理裝置。 【先前技術】 。等離子處理裝置真空反應㈣工作顧進行半導體基4和等離子 二板的基片的加工，真空反應室駐作原理是在真空反應室中通人含有適 當刻蝕劑或澱積源氣體的反應氣體，然後再對該真空反應室進行射頻能量 輸入以啟動反應氣體，來點燃和維持等離子體，以便分別钱刻基片表面 上的材料層或在基；ί表面上綱材料層，進而料導體基片和轉子平板 進行加。舉例來⑦，電容性等離子體反應器已經被廣泛地用來加工半導 體基片和顯示11平板，在電紐等軒體反應H巾，當_稱被施加到 二個電極之一或二者時，就在一對平行電極之間形成電容性放電。 等離子體是擴散._，_大部分等離子體會停留在—對電極之間的 處理區_，但部分等料體可能充滿整個工作室。舉說，轉子體可 flt*充滿真空反應下方的處理區外面的區域a若轉子體到達這些區域， 則這些區域可能隨之發生舰' „或者韻，這會造成反應㈣部的顆 粒站污’進而降麟軒處理裝置的重複使祕能，並可能會雜反應室 或反應室零料的讀壽命。如果不將轉子體約束在―㈣卫作區域 内▼電粒子將才里擊未被保護的區域，進而導致半導體基片表面雜質和污 染。 ★因此’業界-直不斷地致力於產生被約束在處理區的因而更為穩定的 等離子體。現有的_種思路是使㈣束環來約料離子體，例如，美國專 利US6=2189描述了-種使用永久磁鐵約束等離子體擴散的等離子體腔 體仁;S不足之處在於·永久磁體的磁場過強會導致被處理基片内部 的敏感元件損壞’如果磁場過弱又不能實現纽_束轉子體擴散的目 的0 美國專利脱534751 #述了另-触縣構，職體通過緊密排列形 丄州9404 =窄縫隙的由絕緣，製成的約束環抑止等離子體擴散。 ’他們中的大部分會撞擊到約束環的表面進而 防止等離子體的H。但該方法錢完全有 區外，f完全隔離電磁波的茂露，也無法解“露I去的帶電二3 理區外導致的二次射頻放電。 私双丁仕爽 ^國專刺US駕932通過加人接地的導電延伸物來大大減少處理 的專勢場，_雜，喊彡纽科的電場 子與反翁·生加速，形料希料的雜 不能完全地阻止處理區外的電場的形^ 疋、樘万忐亚 古^國專利刪聊描述了—種由物觸成的撕 =孔以允許用過的反應氣體排出工作區，此導電 ： 地，可以吸收排㈣反應驗_電子，並 電子的數量，以增強處理區内的離子密度’ 導電材料的密封環表面時會引起腔體内部的污染和電火花。十w 由上可知’目μ業魄本上有兩種技術思 =::?r離子體排氣通過的由絕緣材料製成的』 =Γ:ΪΓ_方法來約束等離子體，但現有技術都只單 ._,〜路〜又有將兩種思路統-運用到-個等離子體處理梦置 中，因此約束等離子體的效果並不好。 卞祕理裝置 【發明内容】 足==^於提供—種雜子财縣置，克服了财技術的不 術冑晴咖雜污染問題。 本發明的轉子體處理裝置，提供了 處理£外的雜散電場的密度’從轉子體形成的兩種源頭上降低處理區〔卜 6 丄划9404 的不希望有的等離子體的形成。 本發明疋通過以下技術方法實現的： 麥置離子體約束裝置的等離子體處理裝置，料離子體約束 理區的’該轉子體約束裝置包括：彼此相互間隔 : 成狹長通道的多個絕緣元件，至少部分絕緣s件内部嵌置有至少 一個導電it件，導電猶相互電連接並接地形成電場遮罩。 其中，所述狹長通道的尺寸被設計成使從處理區内離開的來自等離子 體的可電粒子在賴此狹長通道時，必須移動的距離，該距離大 粒子的平均自由程。 、可电BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for processing a semiconductor substrate for an integrated circuit or a substrate for processing a glass plate for a flat panel display, and more particularly to a plasma device. A plasma processing apparatus for a body restraint device. [Prior Art]. The plasma treatment device vacuum reaction (4) works to process the semiconductor substrate 4 and the plasma two-plate substrate, and the vacuum reaction chamber resides in the vacuum reaction chamber to pass a reaction gas containing a suitable etchant or a deposition source gas. Then, the vacuum reaction chamber is subjected to RF energy input to start the reaction gas to ignite and maintain the plasma, so as to respectively etch the material layer on the surface of the substrate or the substrate; And the rotor plate is added. For example, a capacitive plasma reactor has been widely used to process semiconductor substrates and display 11 flat plates, and to respond to H-shaped rolls in electric buttons, etc., when _ is applied to one or both of the two electrodes. A capacitive discharge is formed between a pair of parallel electrodes. The plasma is diffused. _, _ most of the plasma will stay in the processing area between the opposing electrodes, but some of the material may fill the entire working chamber. In other words, the rotor body can be flt* filled with the area outside the treatment zone under the vacuum reaction. If the rotor body reaches these areas, these areas may follow the ship's or rhyme, which may cause the particles in the reaction (four) to stand dirty. The repetition of the treatment device of the Linlinxuan makes the secret energy, and may have a read life of the waste reaction chamber or the reaction chamber. If the rotor body is not restrained in the “(4) Guardian area, the electric particles will only hit the unprotected area. , which in turn leads to impurities and contamination on the surface of the semiconductor substrate. ★ Therefore, the industry is constantly striving to produce a more stable plasma that is constrained in the processing area. The existing idea is to make the (four) bundle ring to the desired ion. For example, U.S. Patent No. 6,2,189 describes a plasma cavity kernel that uses a permanent magnet to confine plasma diffusion; S is insufficient in that the permanent magnet's magnetic field is too strong to cause damage to sensitive components inside the substrate being processed' If the magnetic field is too weak, the purpose of the diffusion of the rotor beam can not be achieved. 0 US Patent 534751 # 述 别 - Contact the county structure, the body is closely arranged by the shape of the state 9404 = narrow The confinement ring made of insulation suppresses plasma diffusion. 'Most of them will hit the surface of the confinement ring and prevent plasma H. But the method is completely out of the way, f completely isolates the electromagnetic wave. Dew, it is also impossible to solve the "secondary RF discharge caused by the electrified two 3 area outside the area." Private double Ding Shi Shuang ^ country special thorn US drive 932 through the addition of grounded conductive extensions to greatly reduce the processing of the special field, _ miscellaneous, shouting Newcom's electric field and anti-Wengsheng accelerated, shaped materials mixed The shape of the electric field outside the treatment zone cannot be completely prevented, and the patent is described as a tear-hole that is touched by the object to allow the used reaction gas to exit the work area. Ground, can absorb the discharge (4) reaction _ electrons, and the number of electrons to enhance the ion density in the treatment zone 'contamination ring surface of conductive materials will cause internal pollution and sparks. Ten w can be seen from the above. There are two kinds of technical thoughts on the 目 魄 = : =:: r 离子 离子 排气 排气 』 』 』 』 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法 方法Only single. _, ~ road ~ and there are two ways to apply - to a plasma processing dream set, so the effect of constraining the plasma is not good.卞 Secret device [Summary of the article] Foot ==^ In the provision of a kind of miscellaneous financial county, overcoming the financial technology, the problem of pollution, pollution and pollution. The rotor body processing apparatus of the present invention provides the density of the stray electric field outside the processing unit' from the two sources formed by the rotor body to reduce the formation of an undesired plasma in the processing area. The present invention is achieved by the following technical methods: a plasma processing apparatus for a wheat ion-constraining device, the rotor body restraining device includes: a plurality of insulating elements that are spaced apart from each other: a narrow passage At least a portion of the insulating member is internally embedded with at least one conductive member, and the conductive members are electrically connected to each other and grounded to form an electric field mask. Wherein the elongated channel is sized such that the electrically chargeable particles from the plasma exiting the processing zone must travel a distance that depends on the mean free path of the particle. Electric
、所述狹長通道-端靠近處理區…端靠近等離子體處理裝置的排氣通 道，等離子體處理裝置巾使用反應氣體驗速地通過此狹長通道，並 被排氣裝置抽出等離子體處理裝置的處理腔體。 所述絕緣元件位於面向等離子體處理裝置的處理區的一側，導電元件 位於絕緣元件内部的某一位置，並且導電元件被絕緣元件完全包覆。 所述絕緣元件位於面向等離子體處理裝置的處理區的一側，導電元件 位於背離處理區的一側，並且導電元件被絕緣元件部分包覆，有部分導電 元件暴露在絕緣元件之間形成的狹長通道處。 所述絕緣元件位於面向等離子體處理裝置的處理區的一側，導電元件 位於絕緣元件内部的某一位置，並且至少部分導電元件被絕緣元件完全包 覆，其餘的導電元件被絕緣元件部分包覆，所述被部分包覆的導電元件暴 露在絕緣元件之間形成的狹長通道處。 所述多個絕緣元件為多個共圓心的間隔排列的絕緣環，絕緣環之間的 狹長通道為同心圓間隙。 所述導電元件為導電環。 所述等離子體約束裝置設置於所述等離子體處理裝置中的處理腔體的 内側壁與下電極的外周圍之間。 所述等離子體約束裝置設置於所述等離子體處理裝置中的處理腔體的 側壁上。 所述的絕緣元件係由石英材料或碳化矽(SiC)或氮化矽(Si3N4)製成。 1339404 所述的狹長通道為圓孔狀或溝槽狀。 所述的導電元件相互電連接，並連接至接地的處理裝置的腔體上。 所述的導電元件相互電連接，並連接至等離子體處理裝置=電極的 接地外殼上。 所述的導電元件相互電連接，並同時連接至接地的處理裝置的腔體和 等離子體處理裝置的下電極的接地外殼上。 所遂的導電元件相互電連接在-起並接地，形成網狀結構，構成電場 遮罩。 本發明還進-步公開-觀置有轉子體約束裝㈣轉子體處理裝 置’所述轉子體約束裝置設置在靠近處麵的，所料離子體約^ 裝置包括：設置有多個相互間隔開的狹長通道的絕緣擋板，在絕緣擋板上 背離處理區的一側内部嵌置有多個導電元件，所述導電元件相互電^接並 接地形成電場遮罩。 ” 其中，所述狹長通道的尺寸被設計成使從處理區内離開的來自等離子 體的帶電粒子在離開此狹長通道時，必須移動的距離大於該帶電粒子的平 均自由程。 所述狹長通道一端靠近處理區，一端靠近等離子體處理裝置的排氣通 道，等離子體處理裝置中使用過的反應氣體能快速地通過此狹長通道，並 被排氣裝置抽出等離子體處理裝置的處理腔體。 w 所述絕緣擋板位於面向等離子體處理裝置的處理區的一側，導電元件 位於絕緣擋板内部的某一位置，並且導電元件被絕緣擋板完全包覆。 所述絕緣擋板位於面向等離子體處理裝置的處理區的一側，導電元件 位於背離處理區的-側’並且導電元件被絕賴板部分包覆，有部分導電 元件暴露在絕緣擔板上的狹長通道處。 所述絕緣擋板位於面向等離子體處理裝置的處理區的一側，導電元件 位於絕緣擋板内部的某—位置，並且至少部分導電元件被絕緣擋板完全包 覆，其餘的導電7L件被絕緣擋板部分包覆，該被部分包覆的導電元件暴露 在、％緣擔板上的狹長通道處。 所述絕緣擋板上的狹長通道為多個共圓心的同心圓間隙。 8 1339404 所述導電元件為導電環。 所述等離子體約束裝置設置祕料料體處縣置中的處理腔體的 内側壁與下電極的外周圍之間。 所述等離子體約Mt置設置於所料離子體處理裝£㈣處理腔體的 側壁上。 所述的絕賴板㈣碎㈣或碳切(Sic)姐切⑸凡)製成。 所述的狹長通道為圓孔狀或溝槽狀。 所述的導電元件相互電連接，並連接至接地的處理裝置的腔體上。 所述的導電元件相互電連接，並連接至轉子體處縣置的下電極的 接地外殼上。 所述的導電元件相互電連接，並同時連接至接地的處理裝置的腔體和 等離子體處理裝置的下電極的接地外殼上。 所述的導電元件相互電連接在―起並接地’形成網狀結構，構成電場 遮罩。 【實施方式】 茲有關本發明之詳細内容及技術說明，現配合圖式說明如下： 清參閱第1圖所7F，為本發明的轉子體處理裝置的—個實施例的結 構不意圖。在這個實施例中，等離子體處理裝置1〇具有一個處理腔體U， 處理腔體11基本上脉形，且處理腔體側壁基本上垂直，處理腔體η内 具有相互平行設置的上電極121和下電極122。通常，在上電極121與下電 極122之間的區域為處理區20，該區域將形成高頻能量以點燃和維持等離 子體。在下電極122上方放置待要加确工件，駐件可以是待要刻姓或 加工的半導體基片或者待要加工成平板顯示器的玻璃平板。反應氣體從氣 體/主入口（未圖不）被輸人至處理腔體II内，-個或辣射頻電源（未圖 不）可以被單獨地施加在下電極122上或同時被分別地施加在上電極121 與下電極122上’用以將射頻功率輸送到下電極丨22上，或上電極12ι與 :電極122上，從而在處理腔體u内部產生大的電場。大多數電場線被包 3在上電極121和下電極122之間的處理區2()内，此電場對少量存在於處 理腔體11内部的電子進行加速，使之與輸人的反應氣體的氣體分子碰撞。 9 1339404 這些碰撞導致反就體的離子化和轉子體的激發。反氧體射性氣體 分子在經受這些強電場時失去了電子，留下帶正電_子。帶正電的離^ 向著下電極122方向加速， 加工，即刻蝕、澱積等。 *"J 田1贡止电的雕卞。带正電的離子 與被處理的基片中的令性物質結合，激發基片 根據本發明的發明目的，本發明的等離子體約束裝置3〇的一種實施方 式如第I ®帽示’等離子體約束裝置30 使處理腔體u内的等離子 體放屯被基本約束在上電極121和下電極122之間的處理區2〇内，儘量減 J處理區20外的不希望有的二次等離子體放電。 本發明的等離子體約束裝置30被設置位於處理區2〇的周圍，並位於 處理區20與等離子體處理裝£ 10的排氣通道之間。優選的實施是，等離 子體約束裝置3G設置鱗離子體處理裝置巾的處理腔體n的_壁與下 電極122的外周圍之間的間隙内。 ”The narrow channel-end is close to the processing zone...the end is close to the exhaust passage of the plasma processing device, and the plasma processing device uses the reaction gas to experience the rapid passage through the elongated channel, and is extracted by the exhaust device to be processed by the plasma processing device. Cavity. The insulating member is located on a side facing the processing region of the plasma processing apparatus, the conductive member is located at a position inside the insulating member, and the conductive member is completely covered by the insulating member. The insulating member is located on a side facing the processing region of the plasma processing apparatus, the conductive member is located on a side facing away from the processing region, and the conductive member is partially covered by the insulating member, and a portion of the conductive member is exposed to an elongated portion formed between the insulating members. At the passage. The insulating member is located on a side facing the processing region of the plasma processing apparatus, the conductive member is located at a position inside the insulating member, and at least a portion of the conductive member is completely covered by the insulating member, and the remaining conductive member is partially covered by the insulating member The partially covered conductive element is exposed at an elongated channel formed between the insulating elements. The plurality of insulating elements are a plurality of spaced apart insulating rings arranged at a center, and the narrow passages between the insulating rings are concentric circular gaps. The conductive element is a conductive ring. The plasma confinement device is disposed between an inner sidewall of the processing chamber and an outer periphery of the lower electrode in the plasma processing apparatus. The plasma confinement device is disposed on a sidewall of the processing chamber in the plasma processing apparatus. The insulating member is made of a quartz material or tantalum carbide (SiC) or tantalum nitride (Si3N4). The narrow channel described in 1339404 is a circular hole or a groove. The electrically conductive elements are electrically connected to each other and to the cavity of the grounded processing device. The conductive elements are electrically connected to each other and to the grounded housing of the plasma processing apparatus = electrode. The conductive elements are electrically connected to each other and to both the cavity of the grounded processing device and the grounded outer casing of the lower electrode of the plasma processing apparatus. The conductive elements are electrically connected to each other and grounded to form a mesh structure to form an electric field mask. The present invention further discloses a rotor body restraining device (four) rotor body processing device, wherein the rotor body restraining device is disposed near the surface, and the material ion device comprises: a plurality of mutually spaced apart The insulating baffle of the narrow channel is internally embedded with a plurality of conductive elements on a side of the insulating baffle facing away from the processing region, and the conductive members are electrically connected to each other and grounded to form an electric field mask. Wherein the elongated channel is sized such that charged particles from the plasma exiting the processing zone must move a greater distance than the mean free path of the charged particle as they exit the elongated channel. Close to the processing zone, one end is close to the exhaust passage of the plasma processing apparatus, and the used reaction gas in the plasma processing apparatus can quickly pass through the elongated passage and is extracted by the exhausting device into the processing chamber of the plasma processing apparatus. The insulating baffle is located on a side facing the processing area of the plasma processing apparatus, the conductive element is located at a position inside the insulating baffle, and the conductive element is completely covered by the insulating baffle. The insulating baffle is located facing the plasma processing On one side of the treatment zone of the device, the electrically conductive element is located away from the side of the treatment zone and the electrically conductive element is partially covered by the overlying plate, with a portion of the electrically conductive element being exposed at the elongate channel of the insulating support plate. One side of the processing area facing the plasma processing apparatus, the conductive element is located inside the insulating baffle Position, and at least a portion of the conductive elements are completely covered by the insulating baffle, and the remaining conductive 7L members are partially covered by the insulating baffle, the partially covered conductive elements being exposed at the elongated channels of the % edge plate. The narrow channel on the insulating baffle is a plurality of concentric circular concentric circles. 8 1339404 The conductive element is a conductive ring. The plasma confinement device sets the inner side of the processing cavity in the county center of the secret material body. Between the wall and the outer periphery of the lower electrode. The plasma is about Mt disposed on the sidewall of the processing chamber of the ion treatment device. The slab (four) is broken (four) or carbon cut (Sic) sister. The slit channel is made of a circular hole or a groove. The conductive elements are electrically connected to each other and connected to a cavity of the grounded processing device. The conductive elements are electrically connected to each other. And connected to the grounded outer casing of the lower electrode of the county at the rotor body. The conductive elements are electrically connected to each other and simultaneously connected to the cavity of the grounded processing device and the grounded outer casing of the lower electrode of the plasma processing apparatus. Place The conductive elements are electrically connected to each other and form a mesh structure to form an electric field mask. [Embodiment] The details and technical description of the present invention are described below with reference to the following figures: 7F, the structure of the embodiment of the rotor body processing apparatus of the present invention is not intended. In this embodiment, the plasma processing apparatus 1 has a processing chamber U, and the processing chamber 11 is substantially pulsed and processed. The sidewalls of the cavity are substantially perpendicular, and the processing chamber η has an upper electrode 121 and a lower electrode 122 disposed in parallel with each other. Typically, a region between the upper electrode 121 and the lower electrode 122 is a processing region 20, which will form a high frequency. Energy to ignite and maintain the plasma. Place the workpiece to be applied above the lower electrode 122. The station may be a semiconductor substrate to be burned or processed or a glass plate to be processed into a flat panel display. The reaction gas is from gas/main The inlet (not shown) is input into the processing chamber II, and a or a radio frequency power source (not shown) may be separately applied to the lower electrode 122 or simultaneously applied separately. It is applied to the upper electrode 121 and the lower electrode 122 for delivering radio frequency power to the lower electrode 22, or the upper electrode 121 to the electrode 122, thereby generating a large electric field inside the processing chamber u. Most of the electric field lines are packaged 3 in the processing zone 2 () between the upper electrode 121 and the lower electrode 122. This electric field accelerates a small amount of electrons existing inside the processing chamber 11 to be associated with the input reaction gas. Gas molecules collide. 9 1339404 These collisions result in ionization of the opposite body and excitation of the rotor body. The oxygen-emitting gas molecules lose electrons when subjected to these strong electric fields, leaving a positively charged _ sub. The positively charged ion is accelerated toward the lower electrode 122, and is processed, that is, etched, deposited, or the like. *"J Tian 1 tribute to the electric carving. The positively charged ions are combined with a modifying substance in the substrate to be processed, and the substrate is excited. According to the object of the present invention, an embodiment of the plasma confinement device 3 of the present invention is as described in the first The confinement device 30 causes the plasma in the processing chamber u to be substantially confined within the processing region 2〇 between the upper electrode 121 and the lower electrode 122, minimizing undesirable secondary plasma outside the J processing region 20. Discharge. The plasma confinement device 30 of the present invention is disposed about the processing zone 2〇 and between the processing zone 20 and the exhaust passage of the plasma processing apparatus. Preferably, the plasma confinement device 3G is disposed in a gap between the wall of the processing chamber n of the scale ion processing device and the outer periphery of the lower electrode 122. ”
該等離子體約束裝置30包括彼此相互間隔設置並形成狹長通道31的 多個絕緣元件32，至少部分絕緣元件Μ内部嵌置有至少一個導電元件幻， 所述導電元件33相互電連接並接地形成電場遮罩。狹長通道Μ —端靠近 處理區2G 端靠近轉子體處理敦置的排氣通道，雜子體處理裝置中 使用過的反應氣體能快速地通過該些狹長通道3卜並被概裝置抽出等離 :體處理裝置的處理腔體U。該狹長通道31狀寸設計，應當保證從處理 區内離開的來自缝㈣廳㈣子在_此狹長通道31時，必須移動的 本發明的等離子體約束裝置3〇不僅可以使用過的反應氣體能快速地離 開處理腔t，而且有效崎轉子舰倾束在纽_，接 其工作原理。 、D a 百先’等離子體約束裳置30的絕緣元件32具有上表面34，並且多個 絕緣兀件32之f猶成狹長通道31。由於帶電粒子核理區2()的電場中具 有伞父快的速度和方向性’因而包含在㈣的反I氣體中的多數帶電粒子在 被排氣裝置抽辦會由於其方向性和速度碰撞舰緣元件32的上表面糾 上而無法通過，而-小部分沒有縣至上表面34的帶電粒子會通向狹長通 道31，由於狹長通道31特定的尺寸設計，使得從處理區20内離開的來自The plasma confinement device 30 includes a plurality of insulating members 32 spaced apart from each other and forming an elongated channel 31. At least a portion of the insulating members are internally embedded with at least one conductive member, and the conductive members 33 are electrically connected to each other and grounded to form an electric field. Mask. The narrow passage Μ-end is close to the exhaust passage of the treatment body at the 2G end of the treatment zone, and the reaction gas used in the hetero-substrate treatment device can quickly pass through the narrow passages 3 and be extracted by the general device: The processing chamber U of the body treatment device. The elongated channel 31-inch design should ensure that the plasma confinement device 3 of the present invention, which must be moved from the slit (four) hall (four) when exiting from the processing zone, can not only use the reactive gas energy Quickly leave the processing chamber t, and the effective Saki rotor ship is tilted in the New Zealand, and its working principle. The insulating member 32 of the D a hundred first 'plasma restraining skirt 30 has an upper surface 34, and the plurality of insulating members 32 are juxtaposed into the elongated passage 31. Since the electric field of the charged particle nuclear region 2() has the fast speed and directivity of the umbrella parent's, most of the charged particles contained in the (I) anti-I gas will collide with the exhaust device due to its directionality and velocity. The upper surface of the rim element 32 is tangled and unable to pass, while the small portion of the charged particles from the county to the upper surface 34 will lead to the elongated channel 31. Due to the specific sizing of the elongated channel 31, the exit from the processing zone 20 is derived.
A 10 1339404 等離子體的帶電粒子在離開狹長通道31時，必須移動的距離大於該帶電粒 子的平均自由程，使得從處理區中排出的用過的反應氣體中的絕大部分帶 電粒子在通過這些狹長通道31時至少要與狹長通道3丨的側壁3丨丨碰撞一 次，這些碰撞將帶電粒子上的電荷中和，使得碰撞後離開狹長通道3丨的粒 子都是中性的。結果是，使得在處理區以外的帶電粒子數被大大減少，排 出的氣體不會使等離子體的放電延伸到處理區外的空間，處理區外的放電 的趨勢將大大減少，從而基本上消除空間以外的放電現象。 接著，經過前述絕緣元件32之間的狹長通道31的約束作用以後，仍 然會有少數的帶電粒子可能會從狹長通道31逃逸出，並進入處理區外造成 二次等離子體放電，本發明的等離子體約束裝置3〇所包括的若干個導電元 件33可以有效地解決此問題。若干個導電元件33被接地，接地的實施方 式可以有多種，比如，導電元件33與接地的處理腔體丨〗相連接或與下電 極122的接地外殼相連接，這些接地的導電元件33可以吸引逃逸的帶電粒 子心擊至狹長通道31的側壁311上，中和這些帶電粒子，降低處理區外的 放電趨勢。再者’多個相互連接的並且接地的導電元件33，可以形成一個 網狀結構’構成一個射頻電場遮罩殼，將本來可能向下電極122外徑方向 發散到處理區外的驅動射頻的電場（雜散電場）被有效遮罩在該射頻電場 遮罩殼内。由於處理區外的雜散電場的密度的降低，可以大大減少二次等 離子體產生。因此’本發明的導電元件33不僅可以吸引並中和逃逸的帶電 粒子，而且可以遮罩雜散電場，以降低處理區外面的電場強度，同時從等 離子體產生的兩種源頭上消除或降低處理區外的二次等離子體產生。由上 述說明可知，本發明的等離子體約束裝置3〇可以實現兩次約束作用，先通 過狹長通道31實現第一次約束作用，再通過導電元件33實現第二次約束 作用’貫現對帶電粒子的兩次約束作用，有效地減少了處理區外的不希望 有的等離子體的形成。 上述導電元件33可以有多種實施方式，較優選的一個實施方式是將多 個導電元件33設置成共圓心的導電環，且絕緣元件32與絕緣元件32之間 形成的狹長通道31為共圓心的同心圓間隙。 絕緣元件32同導電元件33的嵌合方式可以有許多，比如可以如第！ /A 10 1339404 The charged particles of the plasma must move longer than the mean free path of the charged particles when leaving the elongated channel 31, so that most of the charged particles in the used reactive gas discharged from the treatment zone pass through these The narrow channel 31 is at least once collided with the side wall 3丨丨 of the narrow channel 3丨, and these collisions neutralize the charge on the charged particles, so that the particles leaving the narrow channel 3丨 after the collision are neutral. As a result, the number of charged particles outside the treatment zone is greatly reduced, the discharged gas does not cause the discharge of the plasma to extend beyond the treatment zone, and the tendency of discharge outside the treatment zone is greatly reduced, thereby substantially eliminating the space. Discharge phenomenon other than. Then, after the restraining action of the narrow channel 31 between the insulating members 32, there are still a small number of charged particles that may escape from the elongated channel 31 and enter the processing region to cause secondary plasma discharge, the plasma of the present invention. The plurality of conductive elements 33 included in the body restraining device 3 can effectively solve this problem. A plurality of conductive elements 33 are grounded, and the grounding can be implemented in various manners. For example, the conductive elements 33 are connected to the grounded processing chamber or to the grounded housing of the lower electrode 122. The grounded conductive elements 33 can attract The escaping charged particles are struck onto the side wall 311 of the narrow channel 31 to neutralize the charged particles, reducing the tendency of discharge outside the processing zone. Furthermore, 'a plurality of interconnected and grounded conductive elements 33 may form a mesh structure' to form an RF electric field mask shell, which may otherwise diverge toward the outer diameter of the lower electrode 122 to drive the RF electric field outside the processing region. (Stray electric field) is effectively masked within the RF electric field mask housing. Secondary plasma generation can be greatly reduced due to a decrease in the density of stray electric fields outside the processing zone. Thus, the conductive element 33 of the present invention not only attracts and neutralizes the escaping charged particles, but also masks the stray electric field to reduce the electric field strength outside the processing zone while eliminating or reducing the treatment from the two sources generated by the plasma. Secondary plasma generation outside the zone. It can be seen from the above description that the plasma confinement device 3 of the present invention can realize two constraining effects, firstly achieving the first constraint through the elongated channel 31, and then implementing the second constraint through the conductive element 33. The two constraining effects effectively reduce the formation of undesired plasma outside the processing zone. The conductive element 33 may have various embodiments. A more preferred embodiment is to provide a plurality of conductive elements 33 as a common center of the conductive ring, and the elongated channel 31 formed between the insulating element 32 and the insulating element 32 is concentric. Concentric circle clearance. There are many ways in which the insulating member 32 can be fitted with the conductive member 33, such as the first! /
II 1339404 圖所示的絕緣元件32完全包覆導 通道31處。也可以如第2圖 ，导龟几件33不會暴露於狹長 子體處理裝置中即^子運體 圖的兩種實施方式於—個等離 郝续Do 篮、力束名置30之複數個導電元件43中有-些 包復’其餘的導電元件43被絕緣元件42部分包覆； 述被的導電元件43暴露在概件^削彡她域 。 =參:第2圖和第3圖’其中第3圖為第2 視圊。作為本發明的另—實施例，所述導電元件43 ^ 狀’且絕緣元件42僅包覆在導電元件43的凸出的上半部分431The insulating element 32 shown in the figure II 1339404 completely covers the channel 31. It can also be as shown in Fig. 2, the two embodiments of the guide turtles 33 will not be exposed to the narrow-length sub-body processing device, that is, the two embodiments of the sub-transportation map, in the case of a separate Ho-Do basket and a force bundle name of 30 There are some claddings in the conductive elements 43. The remaining conductive elements 43 are partially covered by the insulating elements 42; the conductive elements 43 are exposed to the outline. = Reference: Figure 2 and Figure 3, where Figure 3 is the second view. As a further embodiment of the present invention, the conductive member 43 is shaped like a shape and the insulating member 42 is only coated on the convex upper half 431 of the conductive member 43.
莫雷-^件43的下Ϊ部分432暴露於狹長通道41處。這種實施方式的 县、雨Ϊ 41 ^不僅可以貫現第1騎示的實施射的功能，而且其裸露在狹 處的導電元件43的下半部分432可以進—步地使逃逸的帶電粒 子接觸赫絲面，並财_舰雜，結果巾 低處理區外的放電趨勢。 m财啤 根據本發明的發明構思，本發明還可以如第4圖及第5圖的實施變形。 請同時參閱第4圖及第5圖’其” 5圖是第4 _示的等離子體處理裝 置沿Μ線的剖視圖。圖示中的等離子體約綠置5G的絕緣藉係為一被 設置有多個相互間隔開的狹長通道51的絕緣擔板52，該狹長通道Μ被設 置成具有IB形直徑的圓孔’多個導電元件53被嵌置於絕緣播板％的内部 f背離處观20的-側。所有導電元件53相互電連接並接於地，接地的 貝她方式可以有夕種。比如’導電元件53與接地的處理腔體I】相連接或 與下電極！22的接地外殼（未圖示）相連接，這些接地的導電元件53共同 連接在一起，形成一個網狀結構，形成一個電場遮罩。 同樣地，絕緣擋板52與導電元件53的嵌合方式也可以有多種。導電 兀件53可以位於絕緣擔板η内部的某—位置，並且導電元件μ被絕緣撲 板52完全包覆；作為變形，導電树53也可以被絕緣擔板52部分包覆， 有部分導電元件53暴露在絕緣指板Μ上的狹長通道處；或者，導電元件 53位於絕緣擋板52内部的某—位置，並且至少部分導電元件53被絕緣擔 板52完全包覆，其餘的導電元件53被絕緣擔板52部分包覆，該被部分包 12 1339404 覆的導電⑽53暴露在絕緣播板52上的狹長通道處。 當然’作為上述實施例的變形，所述狹長通道51間設置有溝样％，所 述導電元件53也可以填充設置於該溝槽55内。所述導航件Μ也可以僅 覆盖設置於溝槽壁55丨上。所述導電元件W還可以覆蓋設置於溝槽壁％丨 及約束裝置的下表面54上。所述魏元件電連接並接地，比如，電接於 離子體_而丨1或訂電極122的接地糊目· 的處理裝置的腔體】】和等離子體處理裝置的下電極122的接地圖也 示）上。The lower jaw portion 432 of the Moree member 43 is exposed to the elongated channel 41. The county, the rain raft 41 of this embodiment can not only perform the function of performing the first riding, but also the lower half 432 of the conductive member 43 exposed in the narrow portion can further evade the charged particles. Contact with the Hesi surface, and the wealth of the ship, the result of the discharge of the towel outside the low processing area. m Beer According to the inventive concept of the present invention, the present invention can also be modified as in the fourth and fifth embodiments. Please refer to FIG. 4 and FIG. 5 together. FIG. 5 is a cross-sectional view of the plasma processing apparatus shown in FIG. 4 along the Μ line. The plasma in the illustration is about 5G of insulation. An insulating plate 52 of a plurality of spaced apart elongated passages 51, the elongated channel turns being provided with a circular hole having an IB-shaped diameter. A plurality of conductive members 53 are embedded in the interior of the insulating panel%. All the conductive elements 53 are electrically connected to each other and to the ground, and the grounding type can be used in the same way. For example, the 'conductive element 53 is connected to the grounded processing chamber I】 or the grounded housing of the lower electrode !22 (not shown) are connected, and the grounded conductive members 53 are connected together to form a mesh structure to form an electric field mask. Similarly, the insulating baffle 52 and the conductive member 53 can be assembled in various manners. The conductive member 53 may be located at a position inside the insulating platen η, and the conductive member μ is completely covered by the insulating plate 52; as a deformation, the conductive tree 53 may also be partially covered by the insulating plate 52, and partially conductive. Component 53 is exposed At the narrow passage on the fingerboard; or, the conductive member 53 is located at a position inside the insulating shutter 52, and at least a portion of the conductive member 53 is completely covered by the insulating plate 52, and the remaining conductive member 53 is insulated by the support plate 52. Partially coated, the conductive (10) 53 covered by the partial package 12 1339404 is exposed at the elongated channel on the insulating board 52. Of course, as a variation of the above embodiment, the narrow channel 51 is provided with a groove type %, the conductive The component 53 can also be filled in the groove 55. The navigation member Μ can also be disposed only on the groove wall 55丨. The conductive element W can also cover the groove wall %丨 and the restraining device. On the lower surface 54. The Wei element is electrically connected and grounded, for example, a cavity of a processing device electrically connected to the ion body _1 or the ground paste of the electrode 122] and a lower electrode of the plasma processing device The grounding diagram of 122 is also shown).
作為本發明的又-種實現方法，如第6圖及第7圖所示，第7圖 圖所示的等離子體處理裝置沿叫„線的剖顯。圖示的等離子體 60的絕緣元件62上設置有溝槽狀縫的狹長通道6丨， ^ 有導電元件《，料電核63覆蓋設置於溝触縫驗長通道= 覆盍設置於等離子體約束裝置6Q的下表面64及溝槽狀縫的狹 壁611。當然該導電元件63也可以設置於溝槽狀縫的狹長 通道61 _中心線_及等軒體約束裝置的下表面64。所述 地，比如，電接於_子麟理_丨或與下電極丨22的接 也卜Λ又相連接’朗時連接至接地的處理裝置_體 的下電極122的接地外殼（未圖示）上。 篮处理衣置 當然，作為上述實施例的變形，所述溝槽狀縫 =置於溝槽壁651上。所述導電藉63還可以覆蓋設置於溝如加1 子體約束裳置的下表面料。當然該導電元件e也可以設置於溝样狀 兩側及等離子體約束裝置的下表面64。所述導電元件日心 連接於地或者接於接地的等離子體處理腔體11。 电 2為本發_另-實施例，如第8 _示，本發_轉子體約 械置於所述等離子體纽裝置1G中的處理腔體】 ' ，等離子體約束裝置的工作原理是相同的，因此不再詳述。^圖2 第圖至第7圖所述的各種實施變形均可以運用至第8圖所示的實施方2 13 1339404 中 根據本發明的構思和精神，本發明還 可以有另外—種實施變形。該等 電元 離子體約束裝置包括：彼此相互間 里㈣'㈣。 杜成、+•播带-从^ 、· 间丨"1。又置並形成狹長間隙的多個導 狹長間隙被塗覆有絕二寺作區的-側及至:， 被塗覆有絕緣材料的導電元件之間形成狹接:=== 2設區内離開的來自等離子體的帶電粒子在離開此狹ΐ通 Ρ，必__㈣大於該帶子的平均自由程。狹長通道—端靠近 處理區，-端靠近等離子體處理裝置的排氣通 理裝置的處理腔體。該多個導電元件具妓致上為矩形、三角形、凸字狀、 倒Τ狀、手指尖狀的剖面側視形狀的各種變形β ,本發鴨述的狹長通道可以為狀、溝槽狀簡㈣狀，並且狹長 通道可以呈直線狀、轉狀或者折線狀地f穿連通處職和排氣通道。 Θ本發明所述的絕緣元件或絕緣播板由介質材料製成，較優選的實施 是’由石英材料或Sic(碳化石夕)或聊4(氮化石夕)製成。 本發明所朗雜子體纽裝置包括祕M造料體^、平面顯示 器或者液晶顯示㈣使料離子體處理半導縣片的各種設備，例如，等 離子體處理的沉積設備、等離子體敍刻設備等。 以上介紹的健是基於本發_幾個雛實施例，並不能以此來限定 本發明的範HI。任何對本發明的裝置作本技術領域内熟知的部件的替換、 組合、分立，以及對本發明實施步驟作本技術領勒熟知的等同改變或替 換均不超出本發明的揭露以及保護範圍。 丄 3：mu4 【圖式簡單說明】 :ί本發明的等離子體處理敦置的-個實施例的結構示意圖 &二的等離子體處理聚置的另―實施例的、结構示意圖 離子體處理裝置的剖視圖。 ;圖 第5 ‘ A 2 ^的又—等離子體處理裝置的實施例的、结構示意1 Γ: 離子體處理裝置的剖視圖。 構示意圖。驗長通道為溝槽狀崎離子體處理裝Ϊ的實施例的結As a further implementation of the present invention, as shown in Figs. 6 and 7, the plasma processing apparatus shown in Fig. 7 is shown along the line of the line. The insulating element 62 of the plasma 60 is shown. The narrow channel 6 设置 with the grooved slit is provided, ^ has a conductive element, and the material core 63 is covered by the groove contact length channel = the cover is disposed on the lower surface 64 of the plasma restraint device 6Q and the groove shape Slotted narrow wall 611. Of course, the conductive element 63 may also be disposed on the narrow channel 61_center line_ of the groove-like slit and the lower surface 64 of the slant body restraint device. The ground, for example, is electrically connected to _子麟The _ _ or the connection with the lower electrode 丨 22 is also connected to the grounding case (not shown) of the lower electrode 122 of the processing device _ body of the grounding device. In a variation of the embodiment, the groove-like slit is placed on the groove wall 651. The conductive material 63 can also cover the underlying fabric disposed on the groove, such as the one-substrate restraint skirt. Of course, the conductive element e is also It may be disposed on both sides of the groove and the lower surface 64 of the plasma confinement device. The core is connected to the ground or to the grounded plasma processing chamber 11. The electric 2 is the same as the other embodiment, as shown in the eighth embodiment, the present invention is placed on the plasma device. The processing chamber in 1G] ', the working principle of the plasma confinement device is the same, so it will not be described in detail. ^ Figure 2 The various implementation variants described in Figures 7 to 7 can be applied to Figure 8. In accordance with the concept and spirit of the present invention, the present invention may have other implementation variants. The isoelectric ion confinement devices include: (4) '(4) with each other. Du Cheng, +• Broadcast Band-from ^, · 丨 quot 1 1 又 又 又 又 又 又 1 1 1 1 1 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个 多个Forming a narrow connection: === 2 The charged particles from the plasma leaving the zone are separated from the narrow pass, and must be greater than the mean free path of the band. The narrow channel is near the processing zone and the end is close to the plasma. a processing chamber of an exhaust gas treatment device of the body treatment device. The component has a variety of deformations of a rectangular shape, a triangular shape, a convex shape, a inverted shape, and a finger-pointed cross-sectional side view shape, and the elongated passage of the present invention may be a shape or a groove-like shape (four), and The narrow passage may be in a straight line, a swivel shape or a fold line to pass through the communication position and the exhaust passage. The insulating member or the insulation board according to the present invention is made of a dielectric material, and a preferred embodiment is 'by quartz material. Or Sic (carbonized stone eve) or chat 4 (nitrided stone eve). The device of the present invention includes a secret M material body, a flat panel display or a liquid crystal display (4) material ion processing semi-conducting county film Various devices, such as plasma-deposited deposition equipment, plasma lithography equipment, etc. The above-described techniques are based on the present invention and are not intended to limit the HI of the present invention. Any substitutions, combinations, and discretes of the components of the present invention which are well known in the art may be made without departing from the scope of the invention and the scope of the invention.丄3:mu4 [Simplified Schematic Description]: A schematic diagram of a structure of a plasma processing apparatus of the present invention and a plasma processing apparatus of another embodiment of the plasma processing apparatus Cutaway view. Fig. 5 is a cross-sectional view of the embodiment of the plasma processing apparatus, showing the configuration of the plasma processing apparatus. Schematic diagram. The test length channel is the knot of the embodiment of the grooved sigma ion processing device
苐7圖’料6_等料體處 第8圖，為本發明的等離子體、置的。愤圖。 實施例的結構示意圖。 、’'、東裝置設置在等離子體處理裝置的側壁的 【主要元件符號說明】苐7图's material 6_ and other material body Fig. 8, which is the plasma of the present invention. Indignation. Schematic diagram of the structure of the embodiment. , '', the east device is placed on the side wall of the plasma processing device.
10.......... 11.......... 121......... 122......... 20.......... 30、 40、50、60 .... 31、 41、51、61.... 311......... 32、 42、62...... 33、 43、53、63 ·... 34.......... 431......... 432··· 52 · ·… 54 · · · · 55、65 · · 551 、 651 · 611 ··· •.離子體處理裝置 • *處理腔體 ••上電極 ••下電極 *處理區 ’，等離子體約束裝_置 ••狹長通道 ..側壁 ••絕緣元件 ••導電元件 ..上表面 ••上半部分 ••下半部分 ••絕緣擋板 ••下表面 ..·溝槽 .·.溝槽壁 ••下側壁 1510.......... 11.......... 121......... 122......... 20....... ... 30, 40, 50, 60 .... 31, 41, 51, 61.... 311......... 32, 42, 62... 33, 43, 53, 63 ·... 34.......... 431......... 432··· 52 · ·... 54 · · · · 55,65 · · 551 , 651 · 611 ··· •. Ion treatment unit • *Processing chamber ••Upper electrode••Lower electrode*Processing area', plasma-constrained device_Set••Slim channel..Sidewall••Insulation component••Conductive component. Upper surface••Upper part••Lower part••Insulating baffle••Lower surface..·Groove.·.Groove wall••Bottom side wall 15