'334688 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種壓控振盪裝置，且特別是有關於 一種具有雜訊遽除單元之廢控振盪裝置。 【先前技術】 壓控振盪器的設計方法大概可分為兩種，一種為環狀 振盪器（Ring Oscillator )，一種為電感電容振盪器tank oscillator )。環狀振盪器雖然可調頻範圍大，但易受外界雜 訊干擾，並且本身會產生相位雜訊。而電感電容振盪器受 限於其變容器本身電容值的變動範圍，因此調變範圍較 小 0 一般理想的電感電容振盪器由一電感器與電容器所 組成，如果此電感電容槽為無損的’則電感電容槽的品質 因素（quality factor, Q)為無限大，所以理論上振盪器將 不會有相位雜訊。但實際上，電感電容振盪器之電感電容 槽的電感、電容元件，具有寄生電阻，所以此共振電路並 不會無止盡的振盪，所以需要提供一個負電阻（negative resistance)來抵消其寄生電阻，以維持振盪。 因此，習知的壓控振盪器皆採用兩電晶體交又耦合 (Cr〇ss-coupled)的方式來產生一個負阻抗，用以抵消共 振電路中的寄生電阻，即利用主動電路來補償在每個振盪 週期中，振盪電路寄生電阻所損耗的能量，以便達成穩定 振湯。 6 一般來說，利用此種負阻抗技術的壓控振盪器，採用 單一型式之電晶體開關交叉耦合連接，如互補式交叉耦合 架構、P通道金屬氧化物半導體電晶體（PMOS )交叉輕合 架構 '或N通道金屬氧化物半導體電晶體（NM〇s )交又 耦合架構等，上述交叉耦合之電晶體開關不是皆為NM〇s 就是皆為PMOS，因此電晶體開關動作時，一個導通另一 個則切斷，所以此種壓控振盪器沒有共源極端，因此在二 次諧波附近的雜訊，造成相位雜訊性能降低，再者，上述 架構皆會形成兩條直流電流路徑，因此其消耗功率較大。 另一方面，在習知的電感電容壓控振盪器中，為了改 善動態電流大幅上昇，造成電壓波形失真的影響，會利用 在源極端連接一源極電阻，來控制直流電流和其峰值動態 電流，使壓控振盪器操作在電流限制模式而非電壓限制^ 式，但是當壓控振ill使用在高頻時，因為源極電阻會消 耗直流功率，因此需要較大的電晶體，但這也將造成電晶 體會產生更多的寄生電容，使其難以操作在高頻。 【發明内容】 本發明的目的是在提供一種具有雜訊濾除單元之壓 =蓋裝置，用以降低消耗功率，以及減少二階譜波進而 提升相位雜訊之性能。 本發明的另一目的是力接报 之壓控振盪裝置，用：改盖= 一種具有雜訊遽除單元 極電阻消耗直流功率，而 ▲ 派盟盗之源 …、去刼作在尚頻及高頻操作雜訊 惡化之問題。 本發明一較佳實施例提出一種具有雜訊濾除單元之 壓控振盈裝置’包含有_調諧單元以及—雜訊濾除單元， 兩者相互串接。其中該調譜單元包含有—電感電容槽裝置 以及一負電導電路，兩者並聯連接。 、 該負電導電路以電流重複使用架構為基礎，提供一小 訊號負電導（negative conductance )於電感電容槽裝置兩 端，用以抵消掉電感電容槽裝置的正損失電導 loss conductance )，使調諧電路的自然響應為漸增的振盪， 最後由電路本身的非線性限制其振幅。 此電"IL重複使用架構採用一 P通道金屬氧化物半導體 電晶體（PMOS)以及- _道金屬氧化物半導體電晶體 (1SIM0S )相互連接，使其從電源供應端（操作電壓）至 接地端（參考電壓）只有一條電流路徑，進而可節省功率 之消耗。 採用一雜訊濾除單元取代習知電路之源極電阻，可避 免源極電阻在高頻時之直流功率消耗問題，並減少壓控振 盪裝置的相位雜訊（Phase Noise)，其中該雜訊濾除單元 包含一濾波電感器和一濾波電容器並聯連接，藉由使用此 雜訊濾除單元，可以抑制雜訊對於壓控振盪裝置的影響， 並同時降低二階諧波，因此可以大幅提升壓控振盪裝置的 相位雜訊性能。 【實施方式】 1334688 請參照帛1 ®，其繪示依照本發明一較佳實施例的一 種具有雜訊濾除單元之壓控振盪裝置之電路圖。該壓控振 盤裝置100 &含有-調諧單A 101 α及一雜訊遽除單元 102,兩者串聯連接。其中該調諧單元1〇1包含有一電感 電容槽裝置110以及一負電導電路12〇，兩者並聯連接。 該電感電容槽裝置110’包含有一調諧電感m以及一變 容裝置112，兩者並聯連接。 電感電容槽裝置110之變容裝置112為兩個變容器 (Cvar)串接而成，兩者相互串接部經由一電阻連接至一 偏壓(Vctrl)。電感電容槽裝置110係用以產生一振盪訊號， 因此主要湘調整其電感或是電容的數值，來改變電路的 振盪頻率’通常設计壓控振盪器時’都是以調變電容值來 改變振盈器的輸出頻率，所以變容器主宰著整個壓控振盈 裝置之可調頻範圍。 在本實施例中，由於變容器之電容值大小係依據所提 供的偏壓決定’因此藉由改變偏壓（V來改變變容器 之電容值大小，進而改變振盪頻率。在本發明一較佳實施 例中，採用增強型金屬氧化半導體（Accumulati⑽養de MOSvaractor’AMOS)冑容n，因此具有較寬的可調電容 值乾圍。加上若此AMOS變容器採用台積電標準製程技 術，製造在—獨立的N型井基板上，因此可大符減少基板 的雜訊，並改善壓控振盪裝置的相位雜訊。 對於-個振盈電路而言，要保持穩定的振盛則電路需 有能提供能量之元件以維持消耗，若正電阻代表消耗能量 9 =元件，對於提供能量之元件我們可視為負電阻之元件。 在本發明之實施例中，負電導電路120，包含 體121和一第二電晶體122，盆 ^ a 曰曰 八τ弟一電晶體121之源極 端接至-電源供應端（操作電塵I)，其閘極端與第二 電晶體m之沒極端連接，而第一電晶體i2i之沒極端與 第二電晶體122之閘極端連接，第二電晶體122之源極端 與雜訊滤除單元102之-端連接，使其從電源供應端至接 。知（參考電;f )只有—條電流路徑，形成電流重複使用 架構，因此與傳統具有兩條電流路徑的壓控振盪裝置相 比’可節省一半之功率消耗。 第-電晶體121和第二電晶體122之大訊號動作為同 時切換’也就是兩者同時工作在三極區歧在飽和區因 此負電導電路120兩端產生一小訊號負電導（ ⑶ndUctance)，可視為與電感電容槽裝置ιι〇並聯，用以 抵消掉其正損失電導（positive 1〇ss c〇nductance )，使調諧 單元101的自然響應為漸增的振盈，以維持其振堡行為， 最終由調諧單元101的非線性限制其振幅。在本發明之較 佳實鈿例中，第一電晶體12丨為一 p通道金屬氧化物半導 體電晶體（PMOS)，第二電晶體122為一 N通道金屬氧化 物半導體電晶體（NMOS)。 雜訊;慮除單元102，包含一滤波電感器1 〇21和—減波 電容器1022,兩者相互並聯。該雜訊濾除單元1〇2之一端 與第二電晶體122之源極端連接，另一端接至接地端（泉 考電虔）。在本實際例中，採用了雜訊濾除單元1〇2，來改 1334688 善壓控振i袭置100在高頻（24GHz)操作時的相位雜訊 表現’亦即減少壓控振盪裝置1〇〇的相位雜訊。藉由使用 此雜訊遽除單元102，可以抑制壓控振盪裝置10〇的二階 諸波雜訊’因此壓控振盪裝置1〇〇的相位雜訊可以減少。 在本發明一較佳實施例中，該調諧單元1〇1更包含一 . 第一電容器103與一第二電容器104。第一電容器103之 一端連接於該第一電晶體12ι之汲極端，另一端為接地 端，第二電容器104之一端連接於該第二電晶體122之汲 ® 極端，另一端為接地端。此兩電容器係用以使該壓控振盪 裝置100可操作之振盪頻率工作在高頻，如24GHz。 根據相位雜訊理論，可以把壓控振盪裝置之相位雜訊 看成是一線性時變系統（Linear Time-varying，LTV )。當雜 訊電流在輸出波形峰值時輸入，只會造成振幅的變化而不 會改變其相位，振幅的變化會在一段時間後回復，因此可 以忽略。也就是說振盪器在輸出波型峰值附近時對雜訊的 敏感度較小。而當雜訊電流在輸出波形零交越時輸入，則 會ia·成相位的變化而振幅不會改變，但此改變是一直持續 的，這就是所謂的相位雜訊》 在本發明之較佳實施例中，採用先進設計系統 (Advance Design System, ADS)進行模擬，其供應電壓設 • 為1.8V，其模擬結果如下所述。 - 請參照第2a圖和第2b圖’其繪示分別為一具有雜訊 遽除單元之壓控振盪裝置與一沒有雜訊濾除單元之壓控 振盈裝置之輸出波型和汲極電流之模擬波形圖。因此在本 11 1334688 發明一實施例中加入雜訊濾除單元102進行相位雜訊的改 善。由第2a圖可以看出加入雜訊濾除單元102之壓控振盪 裝置，在零交越附近注入的電流（汲極電流）210和第2b圖 中在零交越附近注入的電流（汲極電流）220相比，明顯變 小了。 請進一步參照第3a圖和第3b圖，其繪示分別為加入 雜訊濾除單元與未加入雜訊濾除單元之壓控振盪裝置之 輸出頻譜圖》由此可以看出在本發明之實施例中，加入雜 訊濾除單元之壓控振盪裝之二階諧波310與未加入雜訊濾 除單元之壓控振盪裝置之二階諧波320相比，雜訊濾除單 元可以有效抑制單端輸出之二階諧波達5dbm » 請參照第4圖，其繪示為壓控振盪裝置之調諧特性之 曲線圖。壓控振盪裝置1〇〇其偏壓（Vctr丨）410從〇〜l8v 變化’載頻420可以介於23〜25_7GHz之間進行調變，由 此可看出其調變範圍相當大。 請參照第5圖，其繪示為加入雜訊濾除單元與未加入 雜訊濾除單元之壓控振盪裝置在振盪頻率為24GHz時之 相位雜訊之曲線圖。具有雜訊濾除單元之壓控振盪裝置之 相位雜訊510為-l〇8dBc/Hz，與沒有雜訊濾除單元之壓控 振盪裝置之相位雜訊520相比，改善了 7dBc。 請參照第6圖，其繪示為加入雜訊濾除單元與未加入 雜訊濾除單元之壓控振盪裝置之相位雜訊於1MHz偏移頻 率之曲線圖。具有雜訊濾除單元之壓控振盪裝置與沒有雜 訊濾除單元壓控振盪裝置，以1MHz偏移頻率為函數，在 12 1334688 23〜25GHz之間的載頻6〇〇，可以看出具有雜訊濾除單元之 壓控振盪裝置之相位雜訊61〇，相較於沒有雜訊濾除單元 壓控振盪裝置之相位雜訊62〇，具有較佳的相位雜訊性能。 當本發明一較佳實施例之具有雜訊濾除單元之壓控 振堡裝置，其供給1.8V之電壓與4. 6mA之電流時，其消 耗功率為8.2mW»而其工作在24GHz ,且供應1.8V之電壓 時，其品質因數值（Figure of Merit，FOM)為-186dBc。 由上述各模擬數值皆可看出，在本發明一較佳實施例 中，具有雜訊濾除單元之壓控振盪裝置其在功率消耗、調 變範圍 '相位雜訊以及品質因數值（F〇M)之表現上，與 S知的壓控振盪裝置相比，皆有較佳的性能表現。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 «蔓範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 月t·更明顯易懂’所附圖式之詳細說明如下： 第1圖係繪示依照本發明一較佳實施例的一種具有雜 訊濾除單元之壓控振盪裝置之電路圖。 第2a圖和第2b圖係繪示分別為加入一雜訊電流刺激 源於—具有雜訊濾除單元之壓控振盪裝置與一沒有雜訊 濾除單凡之壓控振盪裝置之輸出波型和汲極電流之模擬 13 1334688 波形圖^ 第3a圖和第3b圖係繪示分別為加入雜訊濾除單元與 未加入雜訊濾除單元之壓控振盪裝置之輸出頻譜圖。 第4圖係繪示為具有雜訊濾、除單元之屋控振盪裝置之 調諧特性之曲線圖。 第5圖係繪示為加入雜訊濾除單元與未加入雜訊濾除 單元之壓控振盪裝置在振盪頻率為24GHz時之相位雜訊 之曲線圖。 第6圖係繪示為加入雜訊濾除單元與未加入雜訊濾除 單元之壓控振盪裝置之相位雜訊於1 MHz偏移頻率之曲線 圖。 【主要元件符號說明】 100 ： 壓控振盪裝置 102 ： 雜訊濾除單元 111 ： 調諧電感 120 ： 負電導電路 122 ： 第二電晶體 104 ： 第二電容器 1022 :濾波電容器 220 ： 汲極電流 320 ： 二階諧波 420 ： 載頻 520 ： 相位雜訊TECHNICAL FIELD The present invention relates to a voltage controlled oscillation device, and more particularly to a waste control oscillation device having a noise removal unit. [Prior Art] The design method of the voltage controlled oscillator can be roughly divided into two types, one is a ring oscillator (Ring Oscillator), and the other is a tank oscillator. Although the ring oscillator has a large adjustable frequency range, it is susceptible to external noise interference and itself generates phase noise. The inductor-capacitor oscillator is limited by the variation range of the capacitance value of the varactor itself, so the modulation range is small. 0 The ideal inductor-capacitor oscillator is composed of an inductor and a capacitor. If the inductor-capacitor slot is lossless The quality factor (Q) of the LC tank is infinite, so theoretically the oscillator will not have phase noise. However, in fact, the inductance and capacitance components of the LC tank of the LC-capacitor have parasitic resistance, so the resonant circuit does not oscillate endlessly. Therefore, it is necessary to provide a negative resistance to offset its parasitic resistance. To maintain oscillation. Therefore, the conventional voltage-controlled oscillators use a two-transistor-coupled (Cr〇ss-coupled) method to generate a negative impedance to cancel the parasitic resistance in the resonant circuit, that is, using an active circuit to compensate each During the oscillation period, the oscillating circuit parasiticly loses the energy lost in order to achieve a stable vibration. 6 In general, a voltage controlled oscillator using this negative impedance technique uses a single type of transistor switch cross-coupled connection, such as a complementary cross-coupled architecture, a P-channel metal-oxide-semiconductor transistor (PMOS) cross-link architecture. 'Or N-channel metal-oxide-semiconductor transistor (NM〇s) cross-coupling architecture, etc., the above cross-coupled transistor switches are not all NM〇s or all PMOS, so when the transistor switches, one turns on the other Then cut off, so the voltage controlled oscillator has no common source extremes, so the noise near the second harmonic causes phase noise performance to be degraded. Furthermore, the above structure will form two direct current paths, so The power consumption is large. On the other hand, in the conventional inductor-capacitor voltage-controlled oscillator, in order to improve the dynamic current and increase the influence of voltage waveform distortion, a source resistor is connected to the source terminal to control the DC current and its peak dynamic current. The voltage-controlled oscillator is operated in the current limit mode instead of the voltage limit mode, but when the voltage-controlled oscillator ill is used at a high frequency, since the source resistance consumes DC power, a larger transistor is required, but this also This will cause the transistor to generate more parasitic capacitance, making it difficult to operate at high frequencies. SUMMARY OF THE INVENTION It is an object of the present invention to provide a pressure-covering device having a noise filtering unit for reducing power consumption and reducing second-order spectral waves to improve phase noise performance. Another object of the present invention is to control the voltage-controlled oscillating device by using: changing the cover = a type of noise that eliminates the unit's resistance to consume DC power, and ▲ sends the source of the pirate... The problem of high frequency operation noise deterioration. In a preferred embodiment of the present invention, a voltage-controlled oscillating device having a noise filtering unit includes a _tuning unit and a noise filtering unit, which are connected in series. The metering unit comprises an inductor-capacitor tank device and a negative conductance circuit, and the two are connected in parallel. The negative conductance circuit is based on a current reuse architecture, and provides a small negative conductance at both ends of the LC tank device to offset the loss conductance of the LC tank device, so that the tuned circuit The natural response is an increasing oscillation, and finally the amplitude of the circuit itself is limited by its nonlinearity. This electric "IL reuse architecture uses a P-channel metal oxide semiconductor transistor (PMOS) and a --channel metal oxide semiconductor transistor (1SIM0S) to be connected from the power supply terminal (operating voltage) to the ground terminal. (Reference voltage) There is only one current path, which saves power consumption. Replacing the source resistance of the conventional circuit with a noise filtering unit can avoid the DC power consumption problem of the source resistance at high frequency and reduce the phase noise of the voltage controlled oscillation device, wherein the noise The filtering unit comprises a filter inductor and a filter capacitor connected in parallel. By using the noise filtering unit, the influence of the noise on the voltage-controlled oscillating device can be suppressed, and the second-order harmonics can be reduced at the same time, thereby greatly improving the voltage control Phase noise performance of the oscillating device. [Embodiment] 1334688 Please refer to 帛1®, which shows a circuit diagram of a voltage controlled oscillating device with a noise filtering unit according to a preferred embodiment of the present invention. The voltage controlled dial device 100 & includes a tuning unit A 101 α and a noise removing unit 102, which are connected in series. The tuning unit 101 includes an LC tank device 110 and a negative conductance circuit 12, which are connected in parallel. The LC tank device 110' includes a tuning inductor m and a varactor 112, which are connected in parallel. The varactor 112 of the LC tank device 110 is formed by connecting two varactors (Cvar) in series, and the mutually connected portions are connected to a bias voltage (Vctrl) via a resistor. The LC tank device 110 is used to generate an oscillation signal. Therefore, the value of the inductor or capacitor is adjusted to change the oscillation frequency of the circuit. When the voltage controlled oscillator is usually designed, the value is changed by the modulation capacitor value. The output frequency of the vibrator, so the variable container dominates the adjustable frequency range of the entire voltage-controlled vibrating device. In the present embodiment, since the capacitance value of the varactor is determined according to the supplied bias voltage, 'the oscillating frequency is changed by changing the bias voltage (V to change the capacitance value of the varactor). In the embodiment, the enhanced metal oxide semiconductor (Accumulati (10) MOS Varactor' AMOS) is used for the capacitance n, and therefore has a wide adjustable capacitance value dry circumference. If the AMOS varactor is manufactured by TSMC standard process technology, it is manufactured in - Independent N-type well substrate, so it can reduce the noise of the substrate and improve the phase noise of the voltage-controlled oscillating device. For a vibrating circuit, to maintain a stable oscillation, the circuit needs to be able to provide The energy component maintains the consumption, if the positive resistance represents the energy consumption 9 = component, we can be considered as the negative resistance component for the energy-providing component. In an embodiment of the invention, the negative conductivity circuit 120 includes a body 121 and a second The transistor 122, the source of the transistor 121 is connected to the power supply terminal (operating the dust I), and the gate terminal is not connected to the second transistor m. The terminal of the first transistor i2i is not connected to the gate terminal of the second transistor 122, and the source terminal of the second transistor 122 is connected to the terminal of the noise filtering unit 102 to be connected from the power supply terminal. (Reference power; f) Only a current path, forming a current reuse architecture, thus saving half of the power consumption compared to a conventional voltage-controlled oscillating device having two current paths. The first transistor 121 and the second battery The large signal action of the crystal 122 is simultaneous switching 'that is, both work simultaneously in the three-pole region in the saturation region, so that a small signal negative conductance ((3) ndUctance) is generated across the negative conductance circuit 120, which can be regarded as an inductive capacitor slot device ιι〇 Parallel to cancel out its positive loss conductance (positive 1〇ss c〇nductance), so that the natural response of the tuning unit 101 is an increasing vibration to maintain its vibrational behavior, ultimately limited by the nonlinearity of the tuning unit 101. In the preferred embodiment of the present invention, the first transistor 12A is a p-channel metal oxide semiconductor transistor (PMOS), and the second transistor 122 is an N-channel metal oxide semiconductor The transistor (NMOS). The noise removing unit 102 includes a filter inductor 1 〇 21 and a wave-reducing capacitor 1022 connected in parallel with each other. One end of the noise filtering unit 1 〇 2 and the second transistor The source of the 122 is connected to the extreme end, and the other end is connected to the grounding terminal (spring test). In this practical example, the noise filtering unit 1〇2 is used to change the 1334688 pressure control vibration to attack the 100 in the high frequency. The phase noise performance during operation (24 GHz) reduces the phase noise of the voltage-controlled oscillating device. By using the noise removing unit 102, the second-order wave of the voltage-controlled oscillating device 10〇 can be suppressed. Therefore, the phase noise of the voltage controlled oscillation device can be reduced. In a preferred embodiment of the present invention, the tuning unit 101 further includes a first capacitor 103 and a second capacitor 104. One end of the first capacitor 103 is connected to the first terminal of the first transistor 12i, and the other end is grounded. One end of the second capacitor 104 is connected to the 汲? terminal of the second transistor 122, and the other end is grounded. The two capacitors are used to operate the oscillating frequency of the voltage controlled oscillating device 100 at a high frequency, such as 24 GHz. According to the phase noise theory, the phase noise of the voltage controlled oscillator can be regarded as a linear time-varying system (LTV). When the noise current is input at the peak of the output waveform, it only causes a change in amplitude without changing its phase. The change in amplitude will be restored after a period of time, so it can be ignored. This means that the oscillator is less sensitive to noise when it is near the peak of the output waveform. When the noise current is input when the output waveform is zero-crossed, the phase changes and the amplitude does not change, but the change is continuous. This is the so-called phase noise. In the embodiment, the simulation was performed using an Advance Design System (ADS) with a supply voltage of 1.8 V, and the simulation results are as follows. - Please refer to Fig. 2a and Fig. 2b' for the output mode and the drain current of a voltage controlled oscillation device with a noise removal unit and a pressure control vibration unit without a noise filter unit. Analog waveform diagram. Therefore, in an embodiment of the invention, the noise filtering unit 102 is added to perform phase noise improvement. From Fig. 2a, it can be seen that the voltage-controlled oscillating device added to the noise filtering unit 102, the current injected near the zero crossing (the drain current) 210 and the current injected near the zero crossing in the second graph (bungee The current) 220 is significantly smaller. Please refer to FIG. 3a and FIG. 3b again, which shows the output spectrum of the voltage-controlled oscillating device added with the noise filtering unit and the noise filtering unit respectively. Thus, the implementation of the present invention can be seen. In the example, the second-order harmonic 310 of the voltage-controlled oscillating device to which the noise filtering unit is added is compared with the second-order harmonic 320 of the voltage-controlled oscillating device not added to the noise filtering unit, and the noise filtering unit can effectively suppress the single-ended filtering unit. The second-order harmonic of the output is 5dbm » Please refer to Figure 4, which is a graph showing the tuning characteristics of the voltage-controlled oscillating device. The voltage controlled oscillating device 1 has its bias voltage (Vctr 丨) 410 varied from 〇~l8v. The carrier frequency 420 can be modulated between 23 and 25 _7 GHz, and thus the modulation range is quite large. Please refer to FIG. 5, which is a graph showing the phase noise of the voltage-controlled oscillating device added with the noise filtering unit and the noise filtering unit at an oscillation frequency of 24 GHz. The phase noise 510 of the voltage controlled oscillating device with the noise filtering unit is -10 〇 8 dBc/Hz, which is improved by 7 dBc compared with the phase noise 520 of the voltage controlled oscillating device without the noise filtering unit. Please refer to FIG. 6 , which is a graph showing the phase noise of the voltage-controlled oscillating device added to the noise filtering unit and the noise filtering unit without adding the noise filtering unit at 1 MHz. The voltage-controlled oscillating device with the noise filtering unit and the voltage-controlled oscillating device without the noise filtering unit have a carrier frequency of 6 334 between 12 1334688 23 and 25 GHz as a function of the 1 MHz offset frequency. The phase noise of the voltage-controlled oscillating device of the noise filtering unit is 61 〇, which has better phase noise performance than the phase noise 62 没有 without the noise filtering unit of the noise filtering unit. When the voltage-controlled vibrating device with the noise filtering unit of the present invention is supplied with a voltage of 1.8 V and a current of 4.6 mA, the power consumption is 8.2 mW» while it operates at 24 GHz, and When the voltage of 1.8V is supplied, the figure of Merit (FOM) is -186dBc. As can be seen from the above various simulation values, in a preferred embodiment of the present invention, the voltage-controlled oscillating device having the noise filtering unit has power consumption, modulation range 'phase noise, and quality factor value (F〇 The performance of M) has better performance than that of the known voltage-controlled oscillating device. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows: FIG. 1 is a diagram showing a comparison according to the present invention. A circuit diagram of a voltage controlled oscillating device having a noise filtering unit of a preferred embodiment. Figure 2a and Figure 2b show the output waveforms of a voltage-controlled oscillating device with a noise-stimulation unit and a noise-controlled oscillating device with no noise filtering unit. And the simulation of the bungee current 13 1334688 Waveform ^ The 3a and 3b diagrams show the output spectrum of the voltage-controlled oscillating device with the noise filtering unit added and the noise filtering unit added. Fig. 4 is a graph showing the tuning characteristics of a house-controlled oscillating device having a noise filtering and dividing unit. Fig. 5 is a graph showing the phase noise of the voltage-controlled oscillating device incorporating the noise filtering unit and the noise filtering unit at an oscillation frequency of 24 GHz. Figure 6 is a graph showing the phase noise of the voltage-controlled oscillating device with the noise filtering unit and the noise-free oscillating unit added to the 1 MHz offset frequency. [Main component symbol description] 100 : Voltage controlled oscillation device 102 : Noise filtering unit 111 : Tuning inductance 120 : Negative conductance circuit 122 : Second transistor 104 : Second capacitor 1022 : Filter capacitor 220 : Gate current 320 : Second harmonic 420 : carrier frequency 520 : phase noise
1〇1 :調諧單元 H0 :電感電容槽裝置 112 :變容裝置 121 :第一電晶體 103 :第一電容器 1021 :濾波電感器 210 :汲極電流 310 :二階諧波 410 :偏壓 510 :相位雜訊 600 :載頻 1334688 610 :相位雜訊 620 ： 相位雜訊1〇1: Tuning unit H0: Inductive capacitor tank device 112: Varactor device 121: First transistor 103: First capacitor 1021: Filter inductor 210: Gate current 310: Second harmonic 410: Bias 510: Phase Noise 600: Carrier Frequency 1334688 610: Phase Noise 620: Phase Noise
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