200908539 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種壓控振盈裝置，且特別是有關於 一種具有雜訊濾除單元之壓控振盪裝置。 【先前技術】200908539 IX. Description of the Invention: [Technical Field] The present invention relates to a pressure-controlled vibration device, and more particularly to a voltage-controlled oscillation device having a noise filtering unit. [Prior Art]
㈣振蘯器的設計方法大概可分為兩種，一種為環狀 振盧器（Ring 0scilIat°r )，—種為電感電容振盪器（LC tank oscillator )。環狀振盪器雖然可調頻範圍大，但易受外界雜 訊干擾，並且本身會產生相位雜訊。而電感電容㈣器受 限於其變容器本身電容值的變動範圍，因此調變範圍較 -般理想的電感電容振盧器由一電感器與電容哭所 組成，如果此電感電容槽為無損的，則電感電容槽的品質 因素（quaHty factor，Q)為無限A，所以理論上㈣器將 不會有相位雜訊。但實際上，電感(4) The design method of the vibrator can be roughly divided into two types, one is a ring oscillator (Ring 0scilIat°r), and the other is an LC tank oscillator. Although the ring oscillator has a large adjustable frequency range, it is susceptible to external noise interference and itself generates phase noise. The inductor-capacitor (four) device is limited by the variation range of the capacitance value of the variable container itself, so the modulation range is better than the ideal inductor-capacitor resonator consisting of an inductor and a capacitor crying, if the inductor-capacitor slot is lossless. The quality factor (Q) of the LC tank is infinite A, so theoretically, the (4) will not have phase noise. But actually, the inductance
电《1：谷振盈器之電感電容 槽的電感、電容it件’具有寄生電阻，所以此共振電路並 不會無止盡的所以需要提供_個負電阻（叫_ resistance)來抵消其寄生電阻，以維持振盪。 因此’習知的壓控振盈器皆採用兩電晶體交叉耦合 (cross-議Pled)时式來產生—個負阻抗，用以抵消共 振電路中的寄生電阻，即利社動電路來補償在每個振藍 週期中，振藍電路寄生電阻所損耗的能量，以便達成穩定 振盡。 200908539The electric "1: Inductance and capacitance of the valley oscillator" has a parasitic resistance, so this resonant circuit does not endlessly, so it is necessary to provide a negative resistance (called _ resistance) to offset its parasitic resistance. To maintain oscillation. Therefore, the conventional voltage-controlled oscillators use a two-transistor cross-coupled (Pled) mode to generate a negative impedance to cancel the parasitic resistance in the resonant circuit. In each blue period, the blue circuit parasitic resistance loses energy to achieve stable oscillation. 200908539
一般來說，利用此種負阻抗技術的壓控振盪器，採用 單一型式之電晶體開關交又耦合連接，如互補式交又耦合 架構、p通道金屬氧化物半導體電晶體（PM〇s)交叉耦合 架構、或N通道金屬氧化物半導體電晶體（NM〇s)交叉 耦合架構等’上述交叉耦合之電晶體開關不是皆為nm〇s 就是皆為PMOS，因此電晶體開關動作時，一個導通另一 個則切斷，所以此種壓控振盪器沒有共源極端，因此在二 次諧波附近的雜訊，造成相位雜訊性能降低，再者，上述 架構皆會形成兩條直流電流路徑，因此其消耗功率較大。 另一方面，在習知的電感電容壓控振盪器中，為了改 善動態電流大幅上昇，造成電壓波形失真的影響，會利用 在源極端連接一源極電阻，來控制直流電流和其峰值動態 電流’使壓控振in操作在電流限制模式而非電壓限制模 式’但是當壓控振盈器使用在高頻時，因為源極電阻會消 耗直流功率’因此需要較大的電晶體，但這也將造成電晶 體會產生更多的寄生電容，使其難以操作在高頻。 【發明内容】 本發明的目的是在提供—種具有雜訊滤除單元 控振盪裝置，用以降低消耗功率，以及減少二階諧波進而 提升相位雜訊之性能。 β本發明的另—目的是在提供_種具有雜訊濾除單元 之塵控振盪裝置，用以改善電流重複使職控振盪器之 極電阻消耗直流功率’而無法操作在高頻及高頻操作雜訊 200908539 惡化之問題。 本發明一較佳實施例提出一種具有雜訊濾除單元之 壓控振靈裝置’包含有一調諧單元以及一雜訊濾除單元， 兩者相互串接。其中該調諧單元包含有一電感電容槽裝置 以及一負電導電路，兩者並聯連接。 該負電導電路以電流重複使用架構為基礎，提供一小 訊號負電導（negative conductance )於電感電容槽裝置兩 端，用以抵消掉電感電容槽裝置的正損失電導（p〇sitive loss conductance),使調諧電路的自然響應為漸增的振盪， 最後由電路本身的非線性限制其振幅。 此電流重複使用架構採用一p通道金屬氧化物半導體 電晶體（PM0S)以及一 N通道金屬氧化物半導體電晶體 (NM0S )相互連接，使其從電源供應端（操作電壓）至 接地端（參考電壓）只有一條電流路徑，進而可節省功率 之消耗。 採用一雜訊濾除單元取代習知電路之源極電阻，可避 免源極電阻在高頻時之直流功率消耗問題，並減少壓控振 盈裝置的相位雜訊（Phase Noise)，其中該雜訊遽除單元 包含一濾波電感器和一濾波電容器並聯連接，藉由使用此 雜訊濾除單元，可以抑制雜訊對於壓控振盪裝置的影響， 並同時降低二階諧波，因此可以大幅提升壓控振盪裝置的 相位雜訊性能。 【實施方式】 200908539 請參照第1圖，其繪示依照本發明一較佳實施例的一 種具有雜訊濾除單元之壓控振盪裝置之電路圖。該壓控振 盪裝置100包含有一調諧單元101以及一雜訊濾除單元 102，兩者串聯連接。其中該調諧單元ι〇1包含有一電感 電容槽裝置110以及一負電導電路120，兩者並聯連接。 該電感電容槽裝置110’包含有一調諧電感lu以及一變 容裝置112，兩者並聯連接。 電感電容槽裝置110之變容裝置112為兩個變容器 1 ^ ( Cvar )串接而成，兩者相互串接部經由一電阻連接至一 偏壓（Vcm)。電感電容槽裝置110係用以產生一振盪訊號， 因此主要利用調整其電感或是電容的數值，來改變電路的 振盈頻率’通常設計壓控振I器時，都是以調變電容值來 改變振盪器的輸出頻率，所以變容器主宰著整個壓控振盪 裝置之可調頻範圍。 在本實施例中，由於變容器之電容值大小係依據所提 供的偏壓決定，因此藉由改變偏壓（Vctri)來改變變容器 之電谷值大小’進而改變振盈頻率。在本發明一較佳實施 例中’採用增強型金屬乳化半導體（Accurnuiati〇n_m〇de MOS varactor，AM0S)變容器，因此具有較寬的可調電容 值範圍。加上若此AMOS變容器採用台積電標準製程技 -術，製造在一獨立的N型井基板上，因此可大符減少基板 的雜訊，並改善壓控振盪裝置的相位雜訊。 對於一個振盪電路而言，要保持穩定的振盪則電路需 有能提供能量之元件以維持消耗，若正電阻代表消耗能量 200908539 之元件，對於提供能量之元件我們可視為負電阻之元件。 在本發明之實施射，負電導電路12G，包含 體121和一第二雷晶體122，甘ώΛ* 曰曰 5 其中第-電晶體121之源極 化接至-電源供應端（操作„ Vdd)，其閘極端盘第二 電晶體122之没極端連接，而第一電晶體⑵线極端虚 第二電晶體m之閘極端連接’第二電晶體122之源極端 與雜訊渡除單元102之-端連接，使其從電源供應端至接In general, a voltage controlled oscillator using this negative impedance technique uses a single type of transistor switch for cross-coupling, such as a complementary cross-coupling architecture, p-channel metal oxide semiconductor transistor (PM〇s) crossover. Coupling architecture, or N-channel metal-oxide-semiconductor transistor (NM〇s) cross-coupling architecture, etc. The above-mentioned cross-coupled transistor switches are not all nm〇s or all PMOS, so when the transistor switch is activated, one is turned on. One is cut off, so the voltage controlled oscillator has no common source extremes, so the noise near the second harmonic causes phase noise performance to be degraded. Furthermore, the above structure will form two DC current paths, so It consumes a lot of power. On the other hand, in the conventional inductor-capacitor voltage-controlled oscillator, in order to improve the dynamic current and increase the influence of voltage waveform distortion, a source resistor is connected to the source terminal to control the DC current and its peak dynamic current. 'Let the voltage-controlled oscillator in the current limit mode instead of the voltage limit mode' but when the voltage-controlled oscillator is used at high frequencies, because the source resistance consumes DC power', it requires a larger transistor, but this also This will cause the transistor to generate more parasitic capacitance, making it difficult to operate at high frequencies. SUMMARY OF THE INVENTION It is an object of the present invention to provide a noise filtering unit oscillating device for reducing power consumption and reducing second-order harmonics to improve phase noise performance. Another object of the present invention is to provide a dust control oscillating device with a noise filtering unit for improving the current repetition to make the extreme resistance of the occupational control oscillator consume DC power and cannot operate at high frequency and high frequency. Operation noise 200908539 The problem of deterioration. According to a preferred embodiment of the present invention, a voltage controlled vibration device having a noise filtering unit includes a tuning unit and a noise filtering unit, which are connected in series with each other. The tuning unit includes an LC tank device and a negative conductance circuit, which are connected in parallel. The negative conductance circuit is based on a current reuse architecture and provides a small negative conductance at both ends of the LC tank device to counteract the positive loss conductance of the LC tank device. The natural response of the tuned circuit is an increasing oscillation, and finally the amplitude of the circuit itself is limited by its nonlinearity. The current reusing architecture is interconnected by a p-channel metal oxide semiconductor transistor (PM0S) and an N-channel metal oxide semiconductor transistor (NM0S) from the power supply terminal (operating voltage) to the ground terminal (reference voltage) There is only one current path, which saves power consumption. By replacing the source resistance of the conventional circuit with a noise filtering unit, the DC power consumption of the source resistance at high frequency can be avoided, and the phase noise of the voltage controlled vibration device can be reduced, wherein the noise is eliminated. The signal removing unit includes a filter inductor and a filter capacitor connected in parallel. By using the noise filtering unit, the influence of the noise on the voltage-controlled oscillating device can be suppressed, and the second-order harmonics can be reduced at the same time, thereby greatly increasing the voltage. Control the phase noise performance of the oscillating device. [Embodiment] 200908539 Please refer to FIG. 1 , which is a circuit diagram of a voltage controlled oscillation device with a noise filtering unit according to a preferred embodiment of the present invention. The voltage controlled oscillation device 100 includes a tuning unit 101 and a noise filtering unit 102, which are connected in series. The tuning unit ι〇1 includes an inductive capacitor tank device 110 and a negative conductance circuit 120, which are connected in parallel. The LC tank device 110' includes a tuning inductor lu and a varactor 112, which are connected in parallel. The varactor 112 of the LC tank device 110 is formed by connecting two varactors 1 ^ (Cvar) in series, and the two series connected to each other via a resistor to a bias voltage (Vcm). The inductor-capacitor slot device 110 is used to generate an oscillation signal. Therefore, the value of the inductor or the capacitor is mainly used to change the oscillation frequency of the circuit. When the voltage-controlled oscillator is designed, the value of the capacitor is changed. The output frequency of the oscillator is changed, so the varactor dominates the adjustable frequency range of the entire voltage controlled oscillating device. In the present embodiment, since the capacitance value of the varactor is determined in accordance with the supplied bias voltage, the magnitude of the electric cell of the varactor is changed by changing the bias voltage (Vctri) to thereby change the oscillation frequency. In a preferred embodiment of the invention, an reinforced metal emulsified semiconductor (AM0S) varactor is used, and thus has a wide range of adjustable capacitance values. In addition, if the AMOS varactor is fabricated on a separate N-type well substrate using TSMC standard process technology, it can greatly reduce the noise of the substrate and improve the phase noise of the voltage controlled oscillating device. For an oscillating circuit, to maintain stable oscillation, the circuit needs to provide energy to maintain the consumption. If the positive resistance represents the component that consumes energy 200908539, we can consider the component that provides energy as the component of negative resistance. In the practice of the present invention, the negative conductance circuit 12G includes a body 121 and a second lightning crystal 122, and the source of the first transistor 121 is polarized to the power supply terminal (operation „Vdd). The gate of the second transistor 122 is not extremely connected, and the gate of the first transistor (2) is extremely connected to the gate of the second transistor m. The source terminal of the second transistor 122 is connected to the source of the noise removing unit 102. - End connection, making it connect from the power supply end
C 地端（參考電壓）只有一條電流路徑，形成電流重複使用 木構’因此與傳統具有兩條電流路徑的壓控振盪裝置相 比’可節省一半之功率消耗。 ±第一電晶體121和第二電晶體m之大訊號動作為同 時切換，也就是兩者同時工作在三極區或是在飽和區，因 此負電導電路12〇兩端產生—小訊號負電導（叫^ conductance)’可視為與電感電容槽裝置ιι〇並聯，用以 抵消掉其正損失電導（pGsitive — ___ )，使調諸 ，元⑻的自然響應為漸增的振盈，以維持其㈣行為， 最終由調諧單元101的非線性限制其振幅。在本發明之較 佳只施例中第電晶體121為一 p通道金屬氧化物半導 體電晶體（PM0S)，第二電晶體122為一 N通道金屬氧化 物半導體電晶體（NM0S )。 “雜訊濾除單元102,包含一濾波電感器1〇21和一濾波 電容器1022，兩者相互並聯。該雜訊濾除單元1〇2之一端 與第二電晶體122之源極端連接，另一端接至接地端（參 考電壓）。在本實際例中，採用了雜訊濾除單元1〇2，來改 200908539 善麼控振蘯裝* 1GG在高頻（24GHz)操料的相位雜訊 表現，亦即減少壓控振盪裝置的相位雜訊。藉由使用 此雜訊濾除單元102，可以抑制壓控振盪裝置1〇〇的二階 諧波雜訊，因此壓控振盪裝置1〇〇的相位雜訊可以減少。 在本發明一較佳實施例中，該調諧單元1〇1更包含一 第一電容器103與一第二電容器1〇4。第—電容器1〇3之 -端連接於該第-電晶冑121之汲極端，另一端為接地 端，第二電容器104之一端連接於該第二電晶體122之汲 極端，另一端為接地端。此兩電容器係用以使該壓控振盪 裝置100可操作之振盪頻率工作在高頻，如24GHz。 根據相位雜訊理論，可以把壓控振盪裝置之相位雜訊 看成是一線性時變系統（Linear Time-varying，LTV )。當雜 訊電流在輸出波形峰值時輸入，只會造成振幅的變化而不 會改變其相位，振幅的變化會在一段時間後回復，因此可 以忽略。也就是說振盪器在輸出波型峰值附近時對雜訊的 敏感度較小。而當雜訊電流在輸出波形零交越時輸入，則 會造成相位的變化而振幅不會改變，但此改變是一直持續 的’這就是所謂的相位雜訊。 在本發明之較佳實施例中’採用先進設計系統 (Advance Design System，ADS )進行模擬，其供應電壓設 為1.8V ’其模擬結果如下所述。 請參照第2a圖和第2b圖’其繪示分別為—具有雜訊 濾除單元之壓控振盪裝置與一沒有雜訊濾除單元之壓控 振盪裝置之輸出波型和汲極電流之模擬波形圖。因此在本 11 200908539 發明—實施例中加入雜訊濾除單元102進行相位雜訊的改 善。由第2a圖可以看出加入雜訊濾除單元1〇2之壓控振盪 裝置’在零交越附近注入的電流（汲極電流）2丨〇和第2b圖 中在零交越附近注入的電流（汲極電流）22〇相比，明顯變 小了。 睛進一步參照第3a圖和第3b圖，其繪示分別為加入 雜訊濾除單元與未加入雜訊濾除單元之壓控振盪裝置之 〇 輸出頻譜圖。由此可以看出在本發明之實施例中，加入雜 訊濾除單元之壓控振盪裝之二階諧波310與未加入雜訊濾 除單元之壓控振盪裝置之二階諧波320相比，雜訊濾除單 元可以有效抑制單端輸出之二階諧波達5dbm。 請參照第4圖，其繪示為壓控振盪裝置之調諧特性之 曲線圖。壓控振盪裝置1〇〇其偏壓（Vctri) 41〇從〇〜18v 變化，載頻420可以介於23〜25.7GHz之間進行調變，由 此可看出其調變範圍相當大。 請參照第5圖，其繪示為加入雜訊濾除單元與未加入 雜訊濾除單元之壓控振盪裝置在振盪頻率為24GHz時之 相位雜訊之曲線圖。具有雜訊濾除單元之壓控振盪裝置之 相位雜訊510為-108dBc/Hz ’與沒有雜訊濾除單元之壓控 • 振盪裝置之相位雜訊520相比，改善了 7dBc。 工 請參照第6圖，其繪示為加入雜訊濾除單元與未加入 雜訊濾除單元之壓控振盪裝置之相位雜訊於lMHz偏移頻 率之曲線圖。具有雜訊濾除單元之壓控振盪裝置與沒有雜 訊渡除單元Μ控振隸置，α丨黯偏移頻率為函數，在 12 200908539 23〜25GHz之間的載頻600,可以看出具有雜訊濾除單元之 壓控振盪裝置之相位雜訊610,相較於沒有雜訊濾除單元 壓控振盪裝置之相位雜訊620,具有較佳的相位雜訊性能。 當本發明一較佳實施例之具有雜訊濾除單元之壓控 振盪裝置，其供給1.8V之電壓與4. 6mA之電流時，其消 耗功率為8· 2mW。而其工作在24GHz，且供應uv之電壓 時，其品質因數值（Figure 〇f Merit，F0M)為-186dBc。 由上述各模擬數值皆可看出，在本發明一較佳實施例 中，具有雜訊濾除單元之壓控振盪裝置其在功率消耗、調 變範圍、相位雜訊以及品質因數值（F〇M)之表現上，與 習知的壓控振盪裝置相比，皆有較佳的性能表現。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神=範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖係繪示依照本發明一較佳實施例的一種具有雜 訊濾除單元之壓控振盪裝置之電路圖。 第2a圖和第2b圖係繪示分別為加入一雜訊電流刺激 源於一具有雜訊濾除單元之壓控振盪裝置與一沒有雜訊 '.....單元之壓控振盈裝置之輸出波型和没極電流之模擬 13 200908539 波形圖。 第3a圖和第3b圖係繪示分別為加入雜訊濾除單元與 未加入雜訊濾除單元之壓控振盪裝置之輸出頻譜圖。 第4圖係繪示為具有雜訊濾除單元之壓控振盪裝置之 調諧特性之曲線圖。 第5圖係繪不為加入雜訊濾除單元與未加入雜訊濾除 單元之㈣振逢裝置在㈣頻率$ 24GHz時之相位雜訊 之曲線圖。 :二圖係緣示為加入雜訊渡除單元與未加入雜訊濾、除 几堅控振盪裝置之相位雜訊於麵2偏移頻率之曲線 【主 要元件符號說明】 100 ： 壓控振盪裝置 102 ： 雜訊據除單元 111 ： 調諧電感 120 ： 負電導電路 122 ： 第二電晶體 104 ： 第二電容器 1022 :濾波電容器 220 ： >及極電流 320 ： 二階諧波 420 ： 載頻 520 ： 相位雜訊 101 ： 調諧單元 110 ： 電感電容槽裝置 112 ： 變容裝置 121 ： 第一電晶體 103 ： 第一電容器 1021 :濾波電感器 210 ： 没極電流 310 ： 二階諧波 410 ： 偏壓 510 ： 相位雜訊 600 ： 載頻 200908539 610 :相位雜訊 620 :相位雜訊 ΟThe C ground (reference voltage) has only one current path, forming a current reusable wood structure', thus saving half the power consumption compared to a conventional voltage-controlled oscillating device with two current paths. The large signal action of the first transistor 121 and the second transistor m is switched at the same time, that is, both of them work in the three-pole region or in the saturation region at the same time, so that the negative conductance circuit 12 produces a small-signal negative conductance at both ends. (called ^ conductance) can be considered as parallel with the inductor-capacitor slot device ιι〇 to offset its positive loss conductance (pGsitive — ___ ), so that the natural response of the element (8) is an increasing vibration to maintain its (4) Behavior, which is ultimately limited by the nonlinearity of the tuning unit 101. In the preferred embodiment of the invention, the first transistor 121 is a p-channel metal oxide semiconductor transistor (PM0S) and the second transistor 122 is an N-channel metal oxide semiconductor transistor (NMOS). The noise filtering unit 102 includes a filter inductor 1〇21 and a filter capacitor 1022, which are connected in parallel with each other. One end of the noise filtering unit 1〇2 is connected to the source terminal of the second transistor 122, and One end is connected to the ground terminal (reference voltage). In this practical example, the noise filtering unit 1〇2 is used to change the phase noise of the 200908539 good vibration control armor* 1GG in the high frequency (24GHz) The performance, that is, the phase noise of the voltage controlled oscillation device is reduced. By using the noise filtering unit 102, the second-order harmonic noise of the voltage-controlled oscillation device 1〇〇 can be suppressed, so that the voltage-controlled oscillation device is The phase noise can be reduced. In a preferred embodiment of the present invention, the tuning unit 101 further includes a first capacitor 103 and a second capacitor 1〇4. The end of the first capacitor 1〇3 is connected to the The first end of the first transistor 104 is connected to the second end of the second transistor 122, and the other end is a ground. The two capacitors are used to make the voltage control. The oscillating frequency of the oscillating device 100 operates at a high frequency, such as 24 GHz. According to the phase noise theory, the phase noise of the voltage-controlled oscillating device can be regarded as a linear time-varying system (LTV). When the noise current is input at the peak of the output waveform, it will only cause the amplitude change. Without changing its phase, the amplitude change will return after a period of time, so it can be ignored. That is to say, the oscillator is less sensitive to noise when the output waveform peak is near. When the noise current is in the output waveform Zero-crossing input will cause a change in phase without changing the amplitude, but the change is continuous. This is called phase noise. In the preferred embodiment of the invention, 'advance design system is used' (Advance) The Design System (ADS) is simulated and its supply voltage is set to 1.8V. The simulation results are as follows. Please refer to Figure 2a and Figure 2b for the voltage-controlled oscillating device with noise filtering unit. And an analog waveform diagram of the output waveform and the drain current of the voltage controlled oscillation device without the noise filtering unit. Therefore, the noise filtering unit is added to the invention of the present invention. 102. Improvement of phase noise. It can be seen from Fig. 2a that the voltage-controlled oscillating device added to the noise filtering unit 1〇2 is injected near the zero crossing (bungee current) 2丨〇 and 2b. In the middle of the zero crossing, the current (bungee current) 22 明显 is significantly smaller. The eye further refers to the 3a and 3b graphs, respectively, which are added to the noise filtering unit and are not added. The output spectrum of the voltage-controlled oscillating device of the filtering unit is omitted. It can be seen that in the embodiment of the present invention, the second-order harmonic 310 of the voltage-controlled oscillating device of the noise filtering unit is added and the noise filtering is not added. In addition to the second-order harmonic 320 of the voltage-controlled oscillating device of the unit, the noise filtering unit can effectively suppress the second-order harmonic of the single-ended output by 5 dbm. Please refer to Fig. 4, which is a graph showing the tuning characteristics of the voltage controlled oscillation device. The voltage-controlled oscillating device 1 has its bias voltage (Vctri) 41〇 changed from 〇~18v, and the carrier frequency 420 can be modulated between 23 and 25.7 GHz, so that the modulation range is quite large. Please refer to FIG. 5, which is a graph showing the phase noise of the voltage-controlled oscillating device added with the noise filtering unit and the noise filtering unit at an oscillation frequency of 24 GHz. The phase noise 510 of the voltage controlled oscillating device with the noise filtering unit is -108dBc/Hz', which is improved by 7dBc compared with the phase noise 520 of the oscillating device without the noise filtering unit. Please refer to FIG. 6 , which is a graph showing the phase noise of the voltage-controlled oscillating device added to the noise filtering unit and the noise-free oscillating unit without adding the noise filtering signal at 1 MHz. The voltage-controlled oscillating device with the noise filtering unit and the control unit without the noise removing unit, the α丨黯 offset frequency is a function, and the carrier frequency 600 between 12 200908539 23~25 GHz can be seen to have The phase noise 610 of the voltage-controlled oscillating device of the noise filtering unit has better phase noise performance than the phase noise 620 of the voltage-controlled oscillating device without the noise filtering unit. When the voltage-controlled oscillating device having the noise filtering unit of the present invention is supplied with a voltage of 1.8 V and a current of 4.6 mA, the power consumption is 8.2 mW. When it is operating at 24 GHz and the voltage of uv is supplied, its quality factor value (Figure 〇f Merit, F0M) is -186 dBc. As can be seen from the above various simulation values, in a preferred embodiment of the present invention, the voltage-controlled oscillating device having the noise filtering unit has power consumption, modulation range, phase noise, and quality factor value (F〇 The performance of M) has better performance than the conventional voltage-controlled oscillating device. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is to be understood that those skilled in the art can make various changes and modifications without departing from the spirit of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A circuit diagram of a voltage controlled oscillating device having a noise filtering unit. 2a and 2b are diagrams showing a voltage-controlled oscillating device with a noise filtering unit and a voltage-controlled oscillating device without a noise '..... The output waveform and the immersed current simulation 13 200908539 waveform diagram. Figures 3a and 3b show the output spectrum of the voltage-controlled oscillating device added to the noise filtering unit and the noise filtering unit, respectively. Figure 4 is a graph showing the tuning characteristics of a voltage controlled oscillating device having a noise filtering unit. Figure 5 is a graph showing the phase noise of the (4) vibrating device at the (4) frequency of 24 GHz when the noise filtering device is not added to the noise filtering unit or the noise filtering unit. : The relationship between the two diagrams is shown as the curve of the offset frequency of the surface noise of the surface noise after adding the noise removal unit and the noise filtering device except for several strong control oscillation devices. [Main component symbol description] 100 : Voltage-controlled oscillation device 102 : noise removal unit 111 : tuning inductance 120 : negative conductance circuit 122 : second transistor 104 : second capacitor 1022 : filter capacitor 220 : > and pole current 320 : second harmonic 420 : carrier frequency 520 : phase Noise 101: Tuning unit 110: Inductive capacitor tank device 112: Varactor device 121: First transistor 103: First capacitor 1021: Filter inductor 210: No-pole current 310: Second-order harmonic 410: Bias 510: Phase Noise 600 : Carrier Frequency 200908539 610 : Phase Noise 620 : Phase Noise Ο
1515