1330266 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種彩色濾光片，特別是關於一種彩色淚光 片及其製造方法。 心 【先前技術】 液晶顯示器因具有高畫質、體積小、重量輕、低電壓驅動、低消 耗功率及應用範圍廣等優點，故已廣泛應用於電子產品顯示裝置上， 如可攜式電視、行動電話、攝錄放影機、筆記型電腦以及桌上型顯示 器等消費性電子或電腦產品，成為顯示器的主流。—般薄膜電晶體液 晶顯示器之製作可大致區分為薄膜電晶體陣列（TFT町町）製程'彩 色渡光片（color filter)製程、液晶顯示單元組裝〇iquid町細_ assembly)製程、及液晶顯示模組（yqUid cryStai m〇duie)製程。 薄膜電晶體陣列製程係用以製作薄膜電晶體基板，其上具有薄膜 電，體陣列與畫素電極陣列。彩㈣光片製程是由不同顏色的彩色滤 光單元所組成之彩色濾、光陣顺包圍於其周圍之黑色矩陣⑽化 matrix)所構成。黑色矩陣主要用於遮播薄膜電晶體、氧化姻錫（ιτ〇) 上的佈線以及顯示區域靠近電極的部分，作為遮光層覆蓋在薄膜電晶 體以及連結不同薄膜電晶體之金屬線上方。薄膜電晶體顯示器係施加 電壓於個㈣膜電晶體對應之畫素電極，使局部之液晶呈現透光或不 透光的情況’並糊彩色遽光片的顏色來決定透光光線的顯示色彩， 複雜的顏色則疋經過二原色光的混光作用，呈現出全彩的影像。 、傳統上製作純濾光片，需消耗許多的顏料經複雜的製程始能完 成包含紅綠監三種顏色的彩色遽光^如彩色濾光片於薄膜電晶體陣 列製程（color fiher on array)製作之製程，在陣列基板製作色層為利用 光阻塗佈、光罩曝光、縣、_等程序，較為㈣且須設計製作光 罩’且為了降低成本通常使用相異色層堆疊方式取代黑色矩陣。 5 ，目前，使財墨技術可直接在薄膜電晶體_上使时墨技術來 製作彩色航丨，其具有低成核無需使用光罩之特性。此噴墨技術 刀為連續式喷墨色製程（線段式噴墨）與單—晝素噴墨製程（點式喷 墨），針對基板上所絲色與位置進行著色，可解絲色滤光y的對準 問題與有效崎低浦的制量。胁使时墨技魏行彩色遽光片 的製作時’墨水為越材質所構成具有良好概性與健度，因此， 進行噴墨時必須使用特殊擋牆之設計將墨水限制於—預定的區域内， 擋牆通常使職色矩I使时墨技術於陣聽板尚需考量擔膽之設 计’因色層厚度約為1.4微米以上，故無法使用陣列基板上元件膜厚來 製作。，然而’檔牆的高度會影_色渡光片的厚度，且墨水與擔牆間 的表面力量於製轉^衫時亦會增加許錢牆與墨水材料 之限制》 〇 鑒於彩色溏光片使用喷墨式（Ink_Jet)色製程為未來趨勢因此， ，何提供-種有效的喷墨技術製作生產彩色渡光片是非常重要的課 題0 【發明内容】 鑑於上述問題’本發明之一目的係提供一種彩色濾光片及 其製造方法’利料段噴墨式色製程直接於基板上製作彩色渡 枣發明之另 ^ 目的提供一種彩色濾光片及其製造方法，線 ^式喷墨色製程相較使用點式喷墨色製程具有較好的膜厚均 :性，且相較於傳統使用光罩曝光顯影將彩色遽光片製作陣列 土板上（COA)更能降低成本。 方本後上述目的，本發明一實施例之彩色濾光片之製造 在’係。括下列轉：提供一基板；設置一薄膜電晶體陣列於 ’八中薄膜電晶體陣列係包含複數個雜電晶體；形成—絕緣^覆 1330266 =薄膜電晶斜列上；移除部份絕緣層，肋降低位於 間姑線區域的絕緣層厚度；設置 钱^體 ，光層於絕緣層上且圖案化遮光層圍繞== 形成—透明導電層於彩色觀層ρ 及 本發明另-實施例之彩色滤光片，係包括： 薄臈電晶體，係設置於基板上為—薄膜電晶體陣列·=贿個1330266 IX. Description of the Invention: [Technical Field] The present invention relates to a color filter, and more particularly to a color tear sheet and a method of manufacturing the same. [Previous Technology] Liquid crystal displays have been widely used in electronic product display devices due to their high image quality, small size, light weight, low voltage drive, low power consumption and wide application range, such as portable TVs. Consumer electronics or computer products such as mobile phones, camcorders, notebook computers, and desktop monitors have become the mainstream of displays. The production of a thin film transistor liquid crystal display can be roughly classified into a thin film transistor array (TFT-cho) process, a color filter process, a liquid crystal display unit assembly, an quiiquid town _ assembly process, and a liquid crystal display. Module (yqUid cryStai m〇duie) process. The thin film transistor array process is used to fabricate a thin film transistor substrate having a thin film, a body array and a pixel electrode array. The color (4) light film process is composed of a color filter composed of color filter units of different colors, and a black matrix (10) matrix surrounded by the light array. The black matrix is mainly used for covering the thin film transistor, the wiring on the oxidized tin and the portion of the display region close to the electrode, and covering the thin film transistor and the metal line connecting the different thin film transistors as a light shielding layer. The thin film transistor display applies a voltage to a pixel electrode corresponding to the (four) film transistor, so that the partial liquid crystal is transparent or opaque, and the color of the color light is used to determine the display color of the light. The complex color is reflected by the light of the two primary colors, showing a full-color image. Traditionally, pure filters are produced, which consume a lot of pigments. After complicated processes, color ray containing three colors of red and green colors, such as color filters, can be produced in a color fiher on array. For the process, the color layer is formed on the array substrate by using photoresist coating, mask exposure, county, _, etc., and (4) and the mask must be designed and manufactured, and in order to reduce the cost, the black matrix is usually replaced by a dissimilar color layer stacking method. 5 . At present, it is possible to make the color ink technology directly on the thin film transistor to make the color raft, which has the characteristics of low nucleation without using a reticle. The inkjet technology knife is a continuous inkjet color processing (line inkjet) and a single-halogen inkjet process (dot inkjet), which is colored for the color and position on the substrate, and can be filtered by the silk color. y's alignment problem and effective Qipu's production. When the ink is made, the ink is made of color and the quality of the material is good. Therefore, when inkjet is used, the design of the special retaining wall must be used to limit the ink to the predetermined area. In the inner wall, the retaining wall usually makes the design of the color tone I to make the ink on the array. The thickness of the color layer is about 1.4 micrometers or more. Therefore, the thickness of the component on the array substrate cannot be used. However, the height of the wall will affect the thickness of the color film, and the surface strength between the ink and the wall will increase the limit of the wall and the ink material. The use of inkjet (Ink_Jet) color process is a future trend. Therefore, it is an important subject to provide an effective inkjet technology for producing a color light-emitting film. [Invention] In view of the above problems, one of the objects of the present invention is Providing a color filter and a manufacturing method thereof, the invention provides a color filter and a manufacturing method thereof, and an inkjet color process directly on a substrate, and provides a color filter and a manufacturing method thereof. Compared with the dot inkjet color process, it has better film thickness and can reduce the cost of the color enamel sheet on the array earth plate (COA) compared with the conventional reticle exposure development. The above object of the present invention is to manufacture a color filter according to an embodiment of the present invention. Include the following: providing a substrate; providing a thin film transistor array in the 'eight medium thin film transistor array comprising a plurality of hybrid crystals; forming - insulating ^ 1330266 = thin film electro-slanting oblique column; removing part of the insulating layer The rib reduces the thickness of the insulating layer located in the area of the ridge line; the body is disposed, the light layer is on the insulating layer, and the patterned light shielding layer is formed around == - the transparent conductive layer is formed on the color viewing layer ρ and the other embodiment of the present invention The color filter includes: a thin germanium transistor, which is disposed on the substrate as a thin film transistor array.
=緒部份移除；—圖案化遮光層，係覆蓋於絕緣層上 先層’係設置於絕緣層上且圖案化遮光棚繞彩 1 明導電層，係、設置於彩色濾光層l 乂及—透 【實施方式】 第1A圖與第1B圖所示為根據本發明彩色濾光片之製造方法及 其結構之不同實施例的部分俯視*意圖^參照第ia圖於本 施例中，複數條訊號線26與複數條掃描線24交叉設置於基板 —(圖上未不）上定義出複數個畫素區，而薄膜電晶體係設置於 每一畫素區之掃描線上，如薄膜電晶體設置處42所示。圖案化遮= Partially removed; - Patterned light-shielding layer, covering the insulating layer, the first layer is set on the insulating layer and the patterned awning is wrapped around the color, and is disposed on the color filter layer 乂1A and 1B are partial plan views of different embodiments of a method for fabricating a color filter according to the present invention and a structure thereof. A plurality of signal lines 26 and a plurality of scanning lines 24 are disposed on the substrate - (not shown) a plurality of pixel regions are defined, and the thin film electro-crystal system is disposed on the scanning line of each pixel region, such as a thin film The crystal setting 42 is shown. Patterned cover
光層40係用來覆蓋薄膜電晶體與連接薄膜電晶體的金屬線 上，如訊號線26❶此圖案化遮光層40與薄膜電晶體陣列間有 一絕緣層（圖上未示），圖案化遮光層4〇會暴露出薄膜電晶體 之一接觸窗44。 接續上述實施例，如第1A圖所示，圖案化遮光層4〇為複數個條 狀圖案於基板上。薄膜電晶體間掃描線區域的絕緣層30,會被部分 私除用以降低此區域的絕緣層厚度。如此，之後進行連續式噴 墨塗佈彩色濾光層時，墨水可均勻擴散分佈於圖案化遮光層4〇 之條狀圖案間。於本實施例中，雖然圖案化遮光層4〇為複數個條狀 圖案，然本發明並不限於此，亦可應用於一般呈矩陣狀（mafrix)的圖 案化遮光層。 7 1330266 請參閱第1B圖，於本實施例中，可將薄膜電晶體之、及極 電極迁迴设§十至薄膜電晶體陣列之訊號線26 —側而偏離掃描線24 一側。因此’薄膜電晶體之接觸窗44’可遠離掃描線24，而其後彩色遽 光層之墨水也不易濺入。由於，畫素電極（圖上未示）係設置於私= 濾光層之上方’而彩色濾光層至少有1微米以上的厚度具有良好^絕 緣性’故可採用汲極電極迂迴設計並不會導致容易短路之問題。 當畫素區内設置有輔助電極需要與畫素電極電性連接時，於微影蝕刻 形成圖案化遮光層40時，經由設計圖案化遮光層4〇可於適當位置暴 露出輔助電極之一接觸窗46。 “The light layer 40 is used to cover the thin film transistor and the metal line connecting the thin film transistor, such as the signal line 26, an insulating layer between the patterned light shielding layer 40 and the thin film transistor array (not shown), and the patterned light shielding layer 4 A contact window 44, one of the thin film transistors, is exposed. Following the above embodiment, as shown in Fig. 1A, the patterned light shielding layer 4 is a plurality of stripe patterns on the substrate. The insulating layer 30 of the scan line region between the thin film transistors is partially privately used to reduce the thickness of the insulating layer in this region. Thus, when the continuous color filter is applied to the color filter layer, the ink is uniformly diffused and distributed between the strip patterns of the patterned light-shielding layer 4A. In the present embodiment, although the patterned light-shielding layer 4 is a plurality of strip-shaped patterns, the present invention is not limited thereto, and can be applied to a pattern-like light-shielding layer which is generally in the form of a matrix. 7 1330266 Please refer to FIG. 1B. In this embodiment, the thin film transistor and the electrode are moved back to the side of the scan line 24 from the side of the signal line 26 of the thin film transistor array. Therefore, the contact window 44' of the thin film transistor can be kept away from the scanning line 24, and the ink of the color luminescent layer is not easily splashed. Since the pixel electrode (not shown) is disposed above the private filter layer and the color filter layer has a thickness of at least 1 micron or more with good electrical insulation, it is possible to use a bungee electrode bypass design. Will cause problems with easy short circuit. When the auxiliary electrode needs to be electrically connected to the pixel electrode in the pixel region, when the patterned light shielding layer 40 is formed by photolithography etching, one of the auxiliary electrodes may be exposed at an appropriate position by designing the light shielding layer 4 Window 46. "
第2A圖至第圖所示為根據本發明彩色滤光片之製造方法 =驟結構部分剖㈣意圖。於本實施例中，請表 閱第=圖與第1B圖所示，首先提供—基㈣並 置 雷曰轳π W # 〇、 、電日日體陣列20係由複數個薄骐 電日日體22所構成。此時，於基.^ m_ 土板丨〇上複數條訊號線與複數條 抑私線交又設置定義出複數個書 韻條 膜電晶體體22係設置於每一書晝：區（圖上未不)’而任-薄 ιη . . , ^ ^ 畫素區之掃描線上。其中，基柘 10例如為溥膜電晶體陣列基板。 扳Fig. 2A to Fig. 2 are diagrams showing the manufacturing method of the color filter according to the present invention. In the present embodiment, please refer to FIG. 1 and FIG. 1B, first providing a base-based (four) juxtaposed Thunder π W # 〇, and an electric solar array 20 consisting of a plurality of thin day electric and solar bodies. 22 constitutes. At this time, on the basis of the .m m_ soil plate, a plurality of signal lines and a plurality of lines of anti-private lines are set to define a plurality of book rhyme films. The crystal body 22 is set in each book: area (on the map) No, no. 'Rather' - thin ιη . . , ^ ^ The scanning line of the pixel area. The base 10 is, for example, a bismuth film transistor array substrate. pull
接者’如第2C圖所示，开《士 蓋薄膜電晶體陣列2G。之後，絕緣層3G於基板10上覆 層3。用以降低位於薄膜電\體，則，移除部分絕緣 未示）時同時製作，故並不需心、電日日體22之接觸“圖上 移除薄膜電S f ” 、外的光罩或改變既有製程。在 移除：Γ2: 區域的部分絕緣層3〇,時，亦同時 ㈣部份絕緣層3G形成薄膜電⑽卜㈣t(圖上未siAs shown in Fig. 2C, the "film" transistor array 2G is opened. Thereafter, the insulating layer 3G is overlaid on the substrate 10 with a layer 3. It is used to reduce the thickness of the film, and then the part of the insulation is not shown. At the same time, it does not need the contact of the heart and the electric body 22, "removing the film electricity S f", the outer mask Or change existing processes. In the removal: Γ 2: part of the insulation layer of the area 3 〇, when, at the same time (four) part of the insulation layer 3G to form a thin film electricity (10) b (four) t (not on the map si
接續上述說明，接荖，镥备B 術形成ώ , 。月參閱第2£圖，利用微影蝕刻技 ㈣ϋ案化遮光層4〇覆 孜 40之材質係包括m^ 緣層 圖案化遮光層 她材枓、金屬路(c〇、或-氧化鉻。此圖案化遮光 8 1330266 層40可用作擋牆，並於基板10上形成長條狀之溝渠結構。之後，如 第2F圖所示’於絕緣層30上圖案化遮光層4〇所構成之溝渠結構内， 利用連續式喷墨技術形成一彩色濾光層5〇，另，此彩色濾光層50係包 括紅藍綠三原色墨水。 接下來，請參閱第2G圖，於彩色濾光層50上形成一透明導電層 60用以作為畫素電極。此透明導電層6〇之材質係包括由氧化銦錫 (indium tin oxide，ITO )、氧化鋅（zinc oxide, ZnO )、錢錫氧 化物（cadmium tin oxide，CTO )、銦鋅氧化物（indium zinc 〇xide， izo)'二氧化錯（zirconium oxide，Zr〇2)或鋁辞氧化物 (aluminum zinc oxide，AZO)。於本實施例中，於基板1〇上之 彩色濾光層50的製作係利用圖案化遮光層4〇做擋牆用來隔離 彩色濾光層50之墨水。由於位於薄膜電晶體22間掃描線區域 絕緣層30’之厚度已減少，故利用連續式喷墨技術塗佈彩色濾 光層50時，其墨水可於圖案化遮光層4〇所構成長條狀之溝渠 結構中順利均勻擴散。 請繼續參照第2G圖，本發明彩色濾光片之結構係包括：一基 板1〇;複數個薄膜電晶體22,係設置於基板上形成一薄膜電晶體陣歹^ 一絕緣層30，係覆蓋於薄膜電晶體陣列上，其令位於薄膜電晶體22間 ^描線區域絕緣層30,之厚度係被部份移除；—圖案化較層4〇，係覆 蓋於絕緣層30上；-彩色濾'光層5G，係利时墨技術形成於絕緣層 30上且圖案化遮光層4〇圍繞彩色濾光層5〇 ;以及一透明導電層仞: 係設置於彩色渡光層上。其中，基板1()可為薄膜電晶體陣列基板或 彩色渡光片基板。 本發明特徵之-在於使用連續式噴墨色製程於陣縣板上製作彩 色濾光片，彩色遽光層直接跨越畫素間的掃描線（scan line)，故彩色 渡光層為連續條狀。畫素電極係設置於槪渡光層上方故需在遮光 層上製作接_，接·位置之設計可視需要設置於訊號^5。_ 9 llne)側離掃描線較遠之處’避免彩色滤光層於嘴墨製 於製程中係利用製作接_之光罩同時減少畫 二二本發 的絕緣層厚度’使連續條狀彩色濾光層能順利擴散。禮區域上方 f程t 段式喷墨色製程減使用點式噴墨色 且相較於傳統使用先罩曝光二 解決習:=:f降低成本’可有效 ^上所述之實施例僅係為說明本發明之技術思想及特 摅以普目的在使熟習此項技藝之人士能夠瞭解本發明之内容並 明所姐施田不此以之限定本發明之專利範圍，即大凡依本發 U示之精神所作之均等變化或修娜，仍應涵蓋在本發明之 寻利範圍内。 【圖式簡單說明】 圖與第1B圖所不為根據本發明彩色遽光片及其 不冋實施例的部分俯視示意圖。 〈 至第2G圖所不為根據本發明彩色遽光片之製造方法之一 實&例的各步驟結構部分剖視示意圖。 【主要元件符號說明】 10 基板 20 薄膜電晶體陣歹，j 22 薄膜電晶體 24 掃描線 26 訊號線 1330266 30 絕緣層 30’ 絕緣層 40 圖案化遮光層 42 薄膜電晶體設置處 44 接觸窗 44’ 接觸窗 46 接觸窗 50 彩色濾光層 60 透明導電層Following the above instructions, the next step is to form a flaw. See the second figure in the month, using the lithography technique (4) to smear the opaque layer 4 〇 之 40 material including the m ^ edge layer patterned shading layer her material 金属, metal road (c 〇, or - chrome oxide. The patterned shading 8 1330266 layer 40 can be used as a retaining wall, and a long trench structure is formed on the substrate 10. Thereafter, as shown in FIG. 2F, a trench formed by patterning the light shielding layer 4 on the insulating layer 30 is formed. In the structure, a color filter layer 5 is formed by a continuous inkjet technique, and the color filter layer 50 includes red, blue, and green primary color inks. Next, please refer to FIG. 2G on the color filter layer 50. A transparent conductive layer 60 is formed to serve as a pixel electrode. The material of the transparent conductive layer 6 includes indium tin oxide (ITO), zinc oxide (ZnO), and money tin oxide (cadmium). Tin oxide (CTO), indium zinc 〇xide (izo)'zirconium oxide (Zr〇2) or aluminum zinc oxide (AZO). In this embodiment, The color filter layer 50 on the substrate 1 is formed by using a patterned light shielding layer 4 The retaining wall is used to isolate the ink of the color filter layer 50. Since the thickness of the insulating layer 30' in the scanning line region between the thin film transistors 22 has been reduced, the ink is applied when the color filter layer 50 is coated by the continuous ink jet technique. The structure of the color filter of the present invention includes: a substrate 1 〇; a plurality of thin film transistors 22 can be smoothly and uniformly diffused in the long trench structure formed by the patterned light shielding layer 4 。. And a thin film transistor array formed on the substrate, covering the thin film transistor array, so that the thickness of the insulating layer 30 between the thin film transistors 22 is partially shifted. The patterning layer 4 is covered on the insulating layer 30; the color filter 'light layer 5G is formed on the insulating layer 30 and the patterned light shielding layer 4 surrounds the color filter layer 5 And a transparent conductive layer 仞: disposed on the color light-passing layer, wherein the substrate 1() may be a thin film transistor array substrate or a color light-receiving substrate. The feature of the present invention is to use continuous inkjet color. Process color filter on the array board The color light layer directly crosses the scan line between the pixels, so the color light-emitting layer is continuous strip. The pixel electrode is disposed above the light-transmissive layer, so it needs to be formed on the light-shielding layer. The design of the connection position can be set to the signal ^5. _ 9 llne) The side is far from the scanning line. 'Avoid the color filter layer in the ink process in the process. The thickness of the insulating layer of the two hairs enables the continuous strip color filter layer to spread smoothly. Above the court area, the f-segment inkjet color process reduces the use of dot inkjet color and compared to the conventional use of the first cover exposure two solution: =: f reduces the cost 'is effective ^ the above embodiment is only The technical idea and the features of the present invention can be understood by those skilled in the art to understand the content of the present invention and the scope of the invention is not limited thereto. Equivalent changes in the spirit of the spirit or the repairs should still be covered by the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The drawings and FIG. 1B are not partial schematic views of a color light-emitting sheet according to the present invention and its embodiments. <2 to Fig. 2G is a schematic cross-sectional view showing a part of the steps of the method for manufacturing a color light-emitting sheet according to the present invention. [Major component symbol description] 10 substrate 20 thin film transistor array, j 22 thin film transistor 24 scan line 26 signal line 1330266 30 insulating layer 30' insulating layer 40 patterned light shielding layer 42 thin film transistor arrangement 44 contact window 44' Contact window 46 contact window 50 color filter layer 60 transparent conductive layer