TWI326983B - Phase-locked loop having level-shift circuit - Google Patents

Phase-locked loop having level-shift circuit Download PDF

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TWI326983B
TWI326983B TW95144189A TW95144189A TWI326983B TW I326983 B TWI326983 B TW I326983B TW 95144189 A TW95144189 A TW 95144189A TW 95144189 A TW95144189 A TW 95144189A TW I326983 B TWI326983 B TW I326983B
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voltage
phase
control terminal
locked loop
charge pump
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TW95144189A
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TW200824289A (en
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Kuan Da Chen
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Via Tech Inc
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1326983 •九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種鎖相迴路(Phase Locked Loop, PLL)特別有關於一種使用奈来製程techn〇i〇gy) 的高頻具電壓位移電路之鎖相趣路。 【先前技術】 鲁弟1圖為傳統的鎖相迴路1 〇〇,其中包括一相位頻率 檢測器(Phase-Frequency Detector, PFD) 102、一 電荷栗 (charge pump) 104、一迴路濾波器(i〇op fiiter)1〇6、以及一 電壓控制振盡 (Voltage Controlled Oscillator, VCO) 108。 該適路濾波器106包括一電阻&以及兩個m〇S電容Mi • 與Μ2。該電荷栗104與該迴路濾、波器1〇6耗接於該電壓控 制振盪器108的一控制端’該控制端的電壓為vcm。該電 壓控制振盪器108產生一時脈信號CKvco,並且根據電壓 φ Vcnt調整該時脈信號CKvco的頻率。該相位頻率檢測器1 〇2 檢測該時脈信號CKvco與一參考時脈信號CKref的相位頻 率差。若該參考時脈信號CKref之頻率高於該時脈信號 CKvc〇之頻率,該相位頻率檢測器1 〇2之up端會輸出up 脈波,對該等MOS電容與Μ2進行充電;反之,該相 位頻率檢測器102之DN端會輸出DN脈波,對該等M〇s 電容Μ〗與Μ】進行放電。該控制端之電壓vent隨著該等 M0S電容河1與Μ:之充放電改變’進而調整該時脈^號 CKvco之頻率。根據上述動作,該鎖相迴路1〇〇所產生的1326983 • Nine, invention description: [Technical field of the invention] The present invention relates to a phase locked loop (PLL), particularly relating to a high frequency voltage shift using a Neil process (techn〇i〇gy) The circuit is interesting. [Prior Art] The picture of Ludi 1 is a conventional phase-locked loop 1 〇〇, which includes a Phase-Frequency Detector (PFD) 102, a charge pump 104, and a primary loop filter (i). 〇op fiiter)1〇6, and a Voltage Controlled Oscillator (VCO) 108. The adaptive filter 106 includes a resistor & and two m〇S capacitors Mi • and Μ2. The charge pump 104 and the loop filter 16 are consumed by a control terminal of the voltage controlled oscillator 108. The voltage at the control terminal is vcm. The voltage controlled oscillator 108 generates a clock signal CKvco and adjusts the frequency of the clock signal CKvco in accordance with the voltage φ Vcnt. The phase frequency detector 1 〇 2 detects a phase frequency difference between the clock signal CKvco and a reference clock signal CKref. If the frequency of the reference clock signal CKref is higher than the frequency of the clock signal CKvc〇, the up pulse of the phase frequency detector 1 〇2 outputs an up pulse, and the MOS capacitor and the Μ2 are charged; The DN end of the phase frequency detector 102 outputs a DN pulse, and discharges the M〇s capacitance Μ and Μ. The voltage vent of the control terminal changes the frequency of the clock CKvco with the charge and discharge of the MOS capacitors 1 and Μ: According to the above action, the phase locked loop 1〇〇

Client's Docket N〇.:VIT06-0060 TTss Docket No:0608-A40833-TW/Final /Glorious Tien 1326983 =號CKVG㈣複㈣_脈錢CKref之頻 π同一製程的半導體元件可依電晶體閘極厚度分類為高 電壓兀件(high-voltage device)與低電壓元件(i〇w_voltage ㈣叫兩類。高電壓元件具有厚氧化層(thick_〇xide),使用 較高的電源。低電壓元件具有薄氧化層(thin_〇xide),使用Client's Docket N〇.:VIT06-0060 TTss Docket No:0608-A40833-TW/Final /Glorious Tien 1326983=No. CKVG (4) Complex (4) _ pulse money CKref frequency π The same process of semiconductor components can be classified according to the transistor gate thickness High-voltage devices and low-voltage components (i〇w_voltage (4) are called two types. High-voltage components have a thick oxide layer (thick_〇xide), using a higher power supply. Low-voltage components have a thin oxide layer (thin_〇xide), use

車父低的電源。在第1圖中,電荷系1G4亦為高電壓元件, 所使用的電源為較高的電源VDDH 〇 為了節省成本與晶片面積,迴路濾波器1〇6所使用的 電容為MOS電容(如M0S電容Μι與%)。在夺米製程中, 過薄的閘極厚度會導致M0S電容易發生漏電流 current)^ 力因此必須❹高電壓^件實現該迴路濾波器i〇6中 :⑽電容。MOS電容必須操作在特定區間中才會具有 疋1谷値。以90奈米製程的高電壓元件為例,nm〇s電容 電壓必須大於0.8伏特(約大於兩倍臨界電壓)才會 具有定値電容,因此第1圖之控制媳 於0.8伏特。 ㈣W的電壓値1,必須大 在高頻鎖相迴路中,為 能量消耗’該電壓控制振盪 所使用的電源為較低的電源 控制端之電壓値vent的上限 了產生高頻時脈信號同時降低 器108必須使用低電壓元件, Vddl。低電源乂〇见會限制該 綜上所述,第 極小的操作範圍内 1圖之控制端的電壓値Vcnt會被限制在 ’導致該電壓控制振盈ϋ剛之增益The car's low power. In Fig. 1, the charge system 1G4 is also a high voltage component, and the power source used is a higher power supply VDDH. To save cost and wafer area, the capacitor used in the loop filter 1〇6 is a MOS capacitor (such as a MOS capacitor). Μι and %). In the rice-removing process, too thin a gate thickness will cause the MOS current to easily leak current.) Therefore, the voltage must be high voltage to realize the loop filter i〇6: (10) Capacitance. The MOS capacitor must operate in a specific interval to have a 疋1 valley. For example, in the high-voltage component of the 90 nm process, the voltage of the nm〇s capacitor must be greater than 0.8 volts (approximately greater than twice the threshold voltage) to have a fixed tantalum capacitance, so the control of Figure 1 is at 0.8 volts. (4) The voltage W1 of W must be large in the high-frequency phase-locked loop for energy consumption. The power supply used for the voltage-controlled oscillation is the upper limit of the voltage of the lower power supply terminal 値vent. The high-frequency clock signal is simultaneously reduced by 108. A low voltage component, Vddl, must be used. The low power supply will limit this. In the first smallest operating range, the voltage 値Vcnt at the control terminal of the figure will be limited to 'the voltage that controls the gain of the voltage.

Client’s Docket No.: VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Glorious Tien 1326983 (kvco)必須很大,方能大幅度調整該時脈信號CKvc〇之頻 率。以90奈米製程為例,Vddh為2 5伏特、Vddl為j 2 伏特’電壓Vcnt之操作範圍為〇 8至〇 9伏特。 此外’由於該電壓控制振盪器1〇8之輸入端的電壓値 Vcnt會受尚電源VDDH之雜訊影響,但該電壓控制振盪器 108所使用的低電源Vddl又不同於該高電源vDDH,所以 鎖相迴路100對電源雜訊會更為敏感。 【發明内容】Client’s Docket No.: VIT06-0060 TT's Docket No: 0608-A40833-TW/Final /Glorious Tien 1326983 (kvco) must be large to greatly adjust the frequency of the clock signal CKvc〇. Taking the 90 nm process as an example, Vddh is 25 volts and Vddl is j 2 volts. The voltage Vcnt has an operating range of 〇 8 to 〇 9 volts. In addition, since the voltage 値Vcnt of the input terminal of the voltage controlled oscillator 1〇8 is affected by the noise of the power supply VDDH, the low power supply Vddl used by the voltage controlled oscillator 108 is different from the high power supply vDDH, so the lock Phase loop 100 is more sensitive to power supply noise. [Summary of the Invention]

本發明提出一種具電壓位移電路之鎖相迴路(Phase Locked Loop,PLL) ’其中包括一相位頻率檢測器(PhaseThe invention provides a phase locked loop (PLL) with a voltage shift circuit, which includes a phase frequency detector (Phase)

Frequency Detector, PFD)、一第一電荷栗(charge pump)、 一迴路濾波器(loop filter)、一電壓位移電路(ievel_shift circuit)、以及一電壓控制振盪器(v〇ltage c〇ntr〇1 〇scillat〇r, vco)。該迴路遽波器内的電容為M〇s電容,屬於高電壓 元件(high-voltage device),目的為避免漏電流。該電壓控 制振盪器為低電壓元件(l〇w-v〇itage device),用以產生一高 頻的時脈信號同時降低能量消耗。該第一電荷泵與該M〇s 電容之閘極耦接於一第一控制端。該電壓位移電路與該電 壓控制振盪器耦接於一第二控制端。該電壓位移電路在該 第一控制端與該第二控制端之間產生一壓降。 根據該時脈信號,該相位頻率檢測器控制該第一電荷 系對該迴路濾波器之M0S電容充放電,以調整該第一控制 端之電壓値’進而改變該第二控制端之電壓値。根據該第 二控制端之電壓値,該電壓控制振盪器調整該時脈信號的 CUenrs Docket No.: VIT06-0060 s Docket No:0608-A40833-TW/Final /Glorious Tien 7 1326983 頻率大小。 上述鎖相迴路之電壓位移電路包括一源極隨轉器 (source follower)。該源極隨耦器為一 NMOS電晶體並且屬 於高電壓元件。上述壓降即該NMOS電晶體之閘極至源極 之壓降。該電壓位移電路更可包括一單位增益緩衝器 (unity-gain buffer)。該單位增益緩衝器之輸入與輸出端分 別搞接該NMOS電晶體之源極與該第二控制端。 此外’上述電壓控制振盪器可為一電源調節電壓控制 振盪器(supply-regulated VCO)。該電源調節電壓控制振盪 器以該第二控制端的電壓値為電源,並且根據該第二控制 端之電壓値調整該時脈信號之頻率。 上述鎖相迴路更可包括一第二電荷泵以及一電阻。該 電阻的兩端分別搞接於上述單位增益放大器之輸出端與該 第二控制端。該第二電荷泵之輸出端連接該第二控制端。 該第二電荷泵為低電壓元件。 【實施方式】 以下配合圖式’列舉數種本發明的實施方式。 第2圖為本發明之實施例,具電壓位移電路之鎖相迴 路200包括一相位頻率檢測器202、一第一電荷泵204、一 迴路濾波器206、一電壓位移電路208、以及一電壓控制振 盪器210。該迴路濾波器206的電容為M0S電容與 MO。該迴路濾波器2〇6為高電壓元件,以防止漏電流。該 電壓控制振盪器210為低電壓元件,以製造高頻的時脈信 號CKvco同時避免過大的能量消耗。該第一電荷泵2〇4之Frequency Detector (PFD), a first charge pump, a loop filter, a voltage shifting circuit (ievel_shift circuit), and a voltage controlled oscillator (v〇ltage c〇ntr〇1 〇 Scillat〇r, vco). The capacitor in the circuit chopper is a M〇s capacitor and belongs to a high-voltage device for the purpose of avoiding leakage current. The voltage controlled oscillator is a low voltage component (l〇w-v〇itage device) for generating a high frequency clock signal while reducing energy consumption. The first charge pump and the gate of the M〇s capacitor are coupled to a first control terminal. The voltage shifting circuit and the voltage control oscillator are coupled to a second control terminal. The voltage displacement circuit generates a voltage drop between the first control terminal and the second control terminal. According to the clock signal, the phase frequency detector controls the first charge to charge and discharge the MOS capacitor of the loop filter to adjust the voltage 値' of the first control terminal to change the voltage 値 of the second control terminal. According to the voltage 该 of the second control terminal, the voltage control oscillator adjusts the CUenrs Docket No. of the clock signal: VIT06-0060 s Docket No: 0608-A40833-TW/Final /Glorious Tien 7 1326983 frequency size. The voltage shifting circuit of the phase locked loop includes a source follower. The source follower is an NMOS transistor and is a high voltage component. The voltage drop is the gate-to-source voltage drop of the NMOS transistor. The voltage shifting circuit may further include a unity-gain buffer. The input and output terminals of the unity gain buffer respectively connect the source of the NMOS transistor and the second control terminal. Further, the above voltage controlled oscillator may be a supply-regulated VCO. The power regulating voltage control oscillator uses the voltage 値 of the second control terminal as a power source, and adjusts the frequency of the clock signal according to the voltage 该 of the second control terminal. The phase locked loop may further include a second charge pump and a resistor. The two ends of the resistor are respectively connected to the output end of the unit gain amplifier and the second control end. The output end of the second charge pump is connected to the second control terminal. The second charge pump is a low voltage component. [Embodiment] Hereinafter, several embodiments of the present invention will be described with reference to the drawings. 2 is an embodiment of the present invention, the phase locked loop 200 with a voltage shift circuit includes a phase frequency detector 202, a first charge pump 204, a loop filter 206, a voltage shift circuit 208, and a voltage control. Oscillator 210. The capacitance of the loop filter 206 is the M0S capacitor and the MO. The loop filter 2〇6 is a high voltage component to prevent leakage current. The voltage controlled oscillator 210 is a low voltage component to produce a high frequency clock signal CKvco while avoiding excessive energy consumption. The first charge pump 2〇4

Clients Docket N〇.:VIT06-0060 1T^ Docket No:0608-A40833-TW/Final /Glorious Tien 1326983 輸出端與該等MOS電容叫與m2之間極鶴接於一第一控 制端,該第-控制端之電壓値為I。以第2圖為例,m〇; 之閉極經由一電阻R]耦接該第一控制端,講3電 合M2之閘極直接連接該第一控制端u。該電廢位移電 路細與該電壓控制振盈器21〇搞接於一第二控制端,該 第二控制端即該電壓控制㈣器21Q的控制端,其電壓値 為該電壓位移電路2〇8在該第一控制端與該第二控 制鈿之間產生一壓降,使該第二控制端的電壓、心位在較 低的電壓準位,以擴大該電壓控制振盪器210之控制端的 操作電壓範圍。 如第2圖所示,該時脈信號CKvc〇經除頻後與一參考 時脈信號CKref輸入該相位頻率檢測器2〇2,以判斷該時脈 信號CKvco的頻率是否需要調整。根據該相位頻率檢測器 2〇2所輸出的信號up與DN,該第一電荷泵204對該等 M0S電容Μι與M2進行充放電,以調整該第一控制端之電 壓vcntl ’進而調整該第二控制端之電壓vcnt2。該電壓控制 振盪器210根據該第二控制端之電壓値Vcnt2調整該時脈信 號CKvco之頻率。 電壓位移電路208包括一 NM0S電晶體M3。該NM0S 電晶體M3為高電壓元件,以一源極隨柄器(Source follower) 的型式運作,其閘極至源極之間的壓降Vgs3即第一控制端 與第二控制端之間的壓降。該電壓位移電路208更包括一 單位增益緩衝器(Unity-gain buffer)212。該單位增益緩衝器 212之輸入與輸出端分別耦接該NM0S電晶體M3之源極Clients Docket N〇.:VIT06-0060 1T^ Docket No:0608-A40833-TW/Final /Glorious Tien 1326983 The output end and the MOS capacitor called m2 are connected to a first control end, the first - The voltage at the control terminal is I. Taking the second figure as an example, the closed pole is coupled to the first control terminal via a resistor R], and the gate of the triple current M2 is directly connected to the first control terminal u. The electric waste displacement circuit is closely connected to the voltage control oscillator 21 to a second control end, and the second control end is the control end of the voltage control (4) 21Q, and the voltage 値 is the voltage displacement circuit 2〇 8 generating a voltage drop between the first control terminal and the second control port, so that the voltage and the heart position of the second control terminal are at a lower voltage level to expand the operation of the control terminal of the voltage controlled oscillator 210. voltage range. As shown in Fig. 2, the clock signal CKvc is input to the phase frequency detector 2〇2 after being divided by a reference clock signal CKref to determine whether the frequency of the clock signal CKvco needs to be adjusted. According to the signals up and DN output by the phase frequency detector 2〇2, the first charge pump 204 charges and discharges the MOS capacitors 与1 and M2 to adjust the voltage vcntl′ of the first control terminal to adjust the first The voltage of the second control terminal is vcnt2. The voltage controlled oscillator 210 adjusts the frequency of the clock signal CKvco according to the voltage 値Vcnt2 of the second control terminal. Voltage shift circuit 208 includes an NMOS transistor M3. The NM0S transistor M3 is a high voltage component that operates in a source follower type with a voltage drop Vgs3 between the gate and the source between the first control terminal and the second control terminal. Pressure drop. The voltage shift circuit 208 further includes a unity-gain buffer 212. The input and output terminals of the unity gain buffer 212 are respectively coupled to the source of the NM0S transistor M3.

Client’s Docket N〇,:VIT06-0060 TT^ Docket No:0608-A40833-TW/Final /GloriousTien 9 與該電壓控制振盪器210之控制端。 該第-電荷栗204為高電壓元件,所❹ 電源Vddh。該電壓控制振盪器21〇之電 ’,、為同 以90奈米製程為例,ν_為2 5伏特、-電源VDDL。 VSS3為0.6伏特。第一控制端之電壓v 百、.2伏特、 特,該等MOS電容吣與m2方能具有;電容':於〇.8伏 :’該電壓控制振蘯器210之控制端的 ,::Client's Docket N〇,: VIT06-0060 TT^ Docket No: 0608-A40833-TW/Final /GloriousTien 9 and the control terminal of the voltage controlled oscillator 210. The first charge pump 204 is a high voltage element, and the power supply Vddh. The voltage control oscillator 21's power is the same as the 90 nm process, ν_ is 25 volts, and the power supply VDDL. VSS3 is 0.6 volts. The voltage of the first control terminal is v, .2 volt, and the MOS capacitors m and m2 can have; the capacitance ': 〇.8 volts:' The voltage controls the control terminal of the vibrator 210, ::

圍為0.3至0.9伏特。由於電壓v蛊 ⑽2)知作犯 你杜 cntl興Vcm2之壓差為〇 6 =寺,所以該第一控制端之電壓値^ 〇、至 =特。相較於第!圖之電壓V嶺範圍為。8 = =),第2圖之薦電容m々m2可以更高的閘極電壓 更能確保腦電容Μ1“具錢電容値。由於 pVent2之操作範隨第m之操作範圍大上許 二因:㈣控制振盪器210之增益(Kvc〇)不需要像電壓It is around 0.3 to 0.9 volts. Since the voltage v蛊 (10) 2) knows that the pressure difference between you and cntlxing Vcm2 is 〇 6 = temple, the voltage of the first control terminal is 値^ 〇, to = special. Compared to the first! The voltage of the graph is in the range of V ridge. 8 = =), the recommended capacitance m々m2 in Figure 2 can higher the gate voltage to ensure that the brain capacitance Μ 1 "has a capacitor 値. Because the operating range of pVent2 with the m range of operation is greater than two reasons: (4) Controlling the gain of the oscillator 210 (Kvc〇) does not require a voltage like

:振盪S 1G8之增益那樣大,時脈信號CK彻抖動效應 也會相對改善許多。 第3圖為本發明另一實施例,具電壓位移電路之鎖相 迴路300所使用的電壓控制振盪器為一電源調節電壓控制 振盪器(supply-regulated VCO)3 02。該電源調節電壓控制振 盪器302之控制端的電壓值(即該第二控制端之電壓Vcnt2) 乃直接用來作為該電源調節電壓控制振盪器302之電源, 以便調整該輸出信號CKvco之頻率。鎖相迴路3〇〇的其他 單元與運作,與鎖相迴路200皆相同。 第4圖為本發明另一實施例,具電壓位移電路之鎖相: The gain of the oscillation S 1G8 is as large, and the jitter effect of the clock signal CK is also relatively improved. 3 is another embodiment of the present invention. The voltage controlled oscillator used in the phase locked loop 300 with a voltage shifting circuit is a supply-regulated VCO 312. The voltage value of the control terminal of the power regulation voltage control oscillator 302 (i.e., the voltage Vcnt2 of the second control terminal) is directly used as the power source of the power supply regulation voltage control oscillator 302 to adjust the frequency of the output signal CKvco. The other units and operations of the phase locked loop 3 are the same as those of the phase locked loop 200. 4 is another embodiment of the present invention, with phase lock of a voltage shift circuit

Client’s Docket No·:VIT06-0060 TT*s Docket No:0608-A40833-TW/Final /Glorious TienClient’s Docket No·:VIT06-0060 TT*s Docket No:0608-A40833-TW/Final /Glorious Tien

迴路400屬於雙通道(dual path)鎖相迴路。 φ 勹』 ^ 1 40U Y包括一相位頻率檢測器402、一第一電荷泵4〇4、—迴路 濾波器(以MOS電容Μ*組成)' 一電壓位移電路4〇6、一 2阻I、一第二電荷泵408、以及一電壓控制振盪器“卜 -、鎖相迴路200相比,鎖相迴路4〇〇主要多了電阻&盥第 〜電荷泵408。該電壓位移電路4〇6所提供的一壓降v、 =及該電㈣兩端之壓降構成第一控制端(VcnU)與第:3控 ,端(V⑽)之塵降。其中該第二電荷《彻為低電壓元件二 =使用的電源與該電壓控制振41Q同樣為低電源 V〇DL。 -本發明之鎖相迴路將-電壓位移電路祕在一高電壓 :件與-低電壓元件之間,以降低該高電壓元件之電· 遽’提供適當的電麈信號給該低電壓元件使用。任何包括 ^電壓位移電路的鎖相迴路皆屬於本發明所欲保護 ^該電壓位移電路也不僅限於上述實施例所提到的牵 f ’其他具有㈣功能的裝置亦可被时實現該 電壓4立: 電路。 本發明之鎖相迴路可以奈米製程製作。該鎖相迴路之 迴路渡波器為高電壓元件,“降低漏電流。該鎖相迴路 之電壓控制振a器為低電壓元件,用以製作高頻的時脈信 號同時減輕能量耗損。 上述實施例乃絲幫助了解本發明,並非用來限制本 發明的範圍。任何符合以下中請專利範圍的裝置或技術, 皆屬於本發明所欲保護的範圍。Loop 400 is a dual path phase locked loop. Φ 勹 』 ^ 1 40U Y includes a phase frequency detector 402, a first charge pump 4〇4, a loop filter (composed of MOS capacitor Μ*)' a voltage displacement circuit 4〇6, a 2 resistance I, A second charge pump 408, and a voltage controlled oscillator "b-, phase-locked loop 200, the phase-locked loop 4 〇〇 mainly has a resistor & 盥 first ~ charge pump 408. The voltage shift circuit 4 〇 6 A pressure drop v, = and a voltage drop across the electric (four) provide a dust fall of the first control terminal (VcnU) and the third control terminal (V(10)), wherein the second charge is completely low voltage Component 2 = the power source used is the same as the voltage control oscillator 41Q is the low power supply V 〇 DL. - The phase-locked loop of the present invention divides the voltage-displacement circuit between a high voltage component and a low voltage component to reduce the The voltage of the high voltage component provides the appropriate electrical signal to the low voltage component. Any phase locked loop including the voltage shifting circuit belongs to the present invention. The voltage shifting circuit is not limited to the above embodiment. The mentioned device that has the function of (4) can also be realized by the time: The phase-locked loop of the present invention can be fabricated in a nanometer process. The loop-connector of the phase-locked loop is a high-voltage component that "reduces leakage current. The voltage-controlled oscillator of the phase-locked loop is a low-voltage component for generating a high-frequency clock signal while reducing energy consumption. The above examples are intended to aid the understanding of the invention and are not intended to limit the scope of the invention. Any device or technology that meets the scope of the claims below is intended to be within the scope of the invention.

Client's Docket N〇.:VIT06-0060 TT’s Docket No:0608-A40833-TW/Final /Gl〇ri〇us Tien 1326983 【圖式簡單說明】 第1圖為傳統的鎖相迴路; 第2圖為本發明之鎖相迴路的實施例; 以及 第3圖為本發明之鎖相迴路的另一實施例; 第4圖為本發明之鎖相迴路的另一實施例。 【主要元件符號說明】 100〜傳統鎖相迴路; 102〜相位頻率檢測為,104〜電何果, 106〜迴路濾波器; 108〜電壓控制振盪器 200、300、400〜本發明之鎖相迴路; 202〜相位頻率檢測裔,204〜電何果, 206〜迴路濾波器; 208〜電壓位移電路; 210〜電壓控制振盪器;212〜單位增益缓衝器 302〜電源調節電壓控制振盪器; 402〜相位頻率檢測器;404〜第一電荷泵; 406〜電壓位移電路; 408~第二電荷泵; 410〜電壓控制振盪器; CKref~參考時脈信號;CKvco〜時脈信號;Client's Docket N〇.:VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Gl〇ri〇us Tien 1326983 [Simplified Schematic] Figure 1 shows the traditional phase-locked loop; Figure 2 shows the present invention. An embodiment of a phase locked loop; and Fig. 3 is another embodiment of a phase locked loop of the present invention; and Fig. 4 is another embodiment of a phase locked loop of the present invention. [Main component symbol description] 100~ traditional phase-locked loop; 102~phase frequency detection is 104~electricity, 106~loop filter; 108~voltage controlled oscillator 200, 300, 400~ phase-locked loop of the present invention 202~ phase frequency detection descent, 204~ electric Ho, 206~ loop filter; 208~ voltage shift circuit; 210~ voltage controlled oscillator; 212~ unity gain buffer 302~ power regulating voltage controlled oscillator; 402 ~ phase frequency detector; 404 ~ first charge pump; 406 ~ voltage shift circuit; 408 ~ second charge pump; 410 ~ voltage controlled oscillator; CKref ~ reference clock signal; CKvco ~ clock signal;

Mi、M2、M4〜MOS 電容; M3〜屬於高電壓元件的NMOS電晶體;Mi, M2, M4~MOS capacitor; M3~ NMOS transistor belonging to high voltage component;

Rl、R_2〜電阻,Rl, R_2~ resistance,

Vcnt〜電壓控制振盪器108之控制端;a control terminal of the Vcnt~voltage controlled oscillator 108;

Vcnti〜第一控制端; Vcnt2〜第二控制端;Vcnti~first control terminal; Vcnt2~second control terminal;

Client’s Docket No.:VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Glorious_Tien 12 1326983Client’s Docket No.:VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Glorious_Tien 12 1326983

Vddh〜面電源; Vddl〜低電源;Vddh~ surface power supply; Vddl~ low power supply;

Vgs3〜NMOS電晶體1^3之閘極至源極之壓降; UP、DN、UP1、DN1、UP2、DN2〜相位頻率檢測器之 輸出信號。Vgs3 ~ NMOS transistor 1 ^ 3 gate to source voltage drop; UP, DN, UP1, DN1, UP2, DN2 ~ phase frequency detector output signal.

Client's Docket N〇.:VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Glorious Tien 13Client's Docket N〇.:VIT06-0060 TT's Docket No:0608-A40833-TW/Final /Glorious Tien 13

Claims (1)

1326983 案號095144189 98年12月1曰 修正本 修正本 十、申請專利範圍:—一*— 1. 一種具電壓位移電路之鎖相迴路,其中包括: .. 一相位頻率檢測器,用以檢測一時脈信號與一參考時 . 脈信號的相位頻率差以產生一輸出信號; 一第一電荷泵,其耦接於該相位頻率檢測器; 一迴路濾波器,包括一 MOS電容,該MOS電容為一 南電壓件,該MOS電容之問極與該第·—電何粟輕接於一 第一控制端; φ 一電壓控制振盪器,為一低電壓元件,用以根據一第 二控制端之一電壓値調整該時脈信號之頻率;以及 一電壓位移電路、一電阻與一第二電荷泵,該電壓位 移電路將該第一控制端之電位以一壓降調整後經由該電阻 耗接至該第二電何豕的·一輸入端’且該第二電何果之一輸 出端耦接該第二控制端; 其中,該第一電荷泵會根據該相位頻率檢測器之該輸 出信號對該MOS電容進行充放電,以調整該第一控制端之 鲁一電壓値。 2. 如申請專利範圍第1項所述之具電壓位移電路之鎖 相迴路,其中該電壓位移電路包括一源極隨耦器,該源極 隨耦器為一 NMOS電晶體並且為一高電壓元件,上述壓降 即該NMOS電晶體之一閘極至一源極之間的壓降。 3. 如申請專利範圍第2項所述之具電壓位移電路之鎖 相迴路,其中該電壓位移電路更包括一單位增益缓衝器, 該單位增益緩衝器之輸入與輸出端分別耦接至該NMOS電 Client’s Docket No·:VIT06-0060 TT’s Docket N〇:0608-A40833TW-10142009-無劃線版 14 1326983 晶體之一源極與上述電阻。 4. 如申請專利範圍第1項所述之具電壓位移電路之鎖 相迴路,其中該第一電荷泵為一高電壓元件。 5. 如申請專利範圍第1項所述之具電壓位移電路之鎖 相迴路,其製造技術為奈米製程。 6. 如申請專利範圍第1項所述之具電壓位移電路之鎖 相迴路,其中該電壓控制振盪器為一電源調節電壓控制振 盪器,該第二控制端之該電壓值係直接用來作為該電源調 節電壓控制振盪器之一電源信號,以便調整該時脈信號之 頻率。 7. 如申請專利範圍第1項所述之具電壓位移電路之鎖 相迴路,其中,該第二電荷泵為一低電壓元件。1326983 Case No. 095144189 December 1, 1998 Revision of this amendment Ten, the scope of patent application: - a * - 1. A phase-locked loop with a voltage displacement circuit, including: .. a phase frequency detector for detection a phase signal difference between a pulse signal and a reference signal to generate an output signal; a first charge pump coupled to the phase frequency detector; a loop filter comprising a MOS capacitor, the MOS capacitor being a south voltage component, the MOS capacitor is connected to the first control terminal and the first control terminal; φ a voltage controlled oscillator is a low voltage component for use according to a second control terminal a voltage 値 adjusts the frequency of the clock signal; and a voltage shifting circuit, a resistor and a second charge pump, the voltage shifting circuit adjusts the potential of the first control terminal by a voltage drop and then is connected to the potential through the resistor An output terminal of the second electrical source and an output end of the second electrical component are coupled to the second control terminal; wherein the first charge pump is configured according to the output signal of the phase frequency detector The M The OS capacitor is charged and discharged to adjust the voltage of the first control terminal. 2. The phase-locked loop with a voltage displacement circuit according to claim 1, wherein the voltage displacement circuit comprises a source follower, the source follower is an NMOS transistor and is a high voltage The voltage drop is the voltage drop between the gate and the source of the NMOS transistor. 3. The phase-locked loop with a voltage displacement circuit according to claim 2, wherein the voltage shifting circuit further comprises a unity gain buffer, wherein the input and output terminals of the unity gain buffer are respectively coupled to the NMOS Power Client's Docket No: VIT06-0060 TT's Docket N〇: 0608-A40833TW-10142009 - No scribe version 14 1326983 One of the crystal source and the above resistor. 4. The phase locked loop with a voltage displacement circuit according to claim 1, wherein the first charge pump is a high voltage component. 5. The phase-locked circuit with a voltage-displacement circuit as described in claim 1 is manufactured by a nanometer process. 6. The phase-locked loop with a voltage-displacement circuit according to claim 1, wherein the voltage-controlled oscillator is a power-regulated voltage-controlled oscillator, and the voltage value of the second control terminal is directly used as The power supply regulates one of the voltage control oscillator power signals to adjust the frequency of the clock signal. 7. The phase locked loop with a voltage displacement circuit according to claim 1, wherein the second charge pump is a low voltage component. Client’s Docket No.:VIT06-0060 TT’s Docket N〇:0608-A40833TW-10142009-無劃線版 15Client’s Docket No.:VIT06-0060 TT’s Docket N〇:0608-A40833TW-10142009-No underlined version 15
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