13218.15 \ '* 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種TFT LCD玻璃基板之钮刻裝置及 其蝕刻方法，尤指一種可於一次製程中同時完成二個承載 1之多數TFT LCD玻璃基板之#刻，達到縮短蝕刻時間及 簡化蝕刻過程之功效者。 【先前技術】 • 按，一般習用者如中華民國專利公報公告第543113號 之「TFT LCD用玻璃基板的自動颠刻裝置及姓刻方法」， 其自動蝕刻裝置，主要包括： 、 一蝕刻槽，其内部設置有一多孔性起泡裝置，於該起 '· 泡裝置上側並設有一擊板裝置’該蝕刻槽内部注有一處理 、 溶液，用以蝕刻裝載於一蝕刻卡匣内之薄膜電晶體液晶顯 示器用玻璃基板； 一第一快速拋洗槽，其内部用以容置裝載蝕刻完成之 薄膜電晶體液晶顯示器用玻璃基板主餘刻卡g，其内部並 設置有一喷射超純水之喷麗裝置’一位於下部、用以噴射 氮氣之多孔性起泡裝置’以及一上部之擊板，用以洗淨該 玻璃基板； 一第二快速拋洗槽，使用與該第一快速拋洗槽相同之 - 方式反覆洗淨該第一快速拋洗槽洗淨完成之該玻璃基板， 以將該玻璃基板表面徹底洗淨；以及 一乾燥槽，其内部用以容置裝載洗淨完成之該玻璃基 1321815 · m13218.15 \ '* IX. Description of the Invention: [Technical Field] The present invention relates to a button engraving device for a TFT LCD glass substrate and an etching method thereof, and more particularly to a method for simultaneously completing two carriers 1 in a single process The majority of TFT LCD glass substrates achieve the effect of shortening the etching time and simplifying the etching process. [Prior Art] • According to the “Ultimate Indentation Device and Surname Method for Glass Substrate for TFT LCD”, the general practitioners, such as the Republic of China Patent Gazette No. 543113, the automatic etching device mainly includes: A porous bubbling device is disposed inside the device, and a plate striking device is disposed on the upper side of the bubbling device. The etching chamber is internally filled with a treatment and a solution for etching the thin film transistor liquid crystal loaded in an etching cassette. a glass substrate for display; a first fast-washing tank for accommodating a glass substrate main remnant card g for a thin film transistor liquid crystal display, and a spray device for spraying ultrapure water therein 'a porous bubbling device for spraying nitrogen gas at the lower portion and an upper plate for cleaning the glass substrate; a second rapid cleaning tank using the same same as the first rapid cleaning tank - a method of repeatedly washing the glass substrate after the first rapid cleaning bath is cleaned to thoroughly wash the surface of the glass substrate; and a drying tank for internal use thereof Loading home washing completion of the glass substrate 1321815 · m
I I 板錢辭s ’並料-喷嘴m射氮氣，以乾燥該 玻璃基板。 而其自動蝕刻方法，主要包括以下步驟： (A) 提供一蝕刻槽，該蝕刻槽内部設置有—多孔性起泡 裝置，於該起泡裝置上側並設有—擊板裝置，將一裝載薄 膜電晶體液晶顯示器用玻璃基板主蝕刻卡匣置於該蝕刻槽 内，並庄入一處理溶液，以姓刻該玻璃基板； (B) 將裝載蝕刻完成之薄膜電晶體液晶顯示器用玻璃 φ 基板主蝕刻卡匣置入一第一快速拋洗槽内部，透過該第一 快速拋洗槽内部裝設之喷射超純水之喷灑裝置，位於底 部、用以喷射氮氣之多孔性起泡裝置，以及一位於上部之 " 擊板，用以洗淨該玻璃基板； - (C)將於該第一快速拋洗槽洗淨完成之該玻璃基板置 入一第二快速拋洗槽，並使用與該第一快速拋洗槽相同之 方式反覆洗淨該第一快速拋洗槽洗淨完成之該玻璃基板， 鲁以將該玻璃基板表面徹底洗淨；以及 (D)將裝載洗淨完成之該玻璃基板之該蝕刻卡匣置入 一乾燥槽内’並使用其内部設置的喷嘴喷射氮氣，以乾燥 該玻璃基板。 藉由上述之裝置及方法可使TFT LCD用玻璃基板達到 自動姓刻之功效。 - 雖然上述習用之「TFT LCD用玻璃基板的自動蝕刻裝 置及姓刻方法」可達到TFT LCD用玻璃基板的自動蝕刻， 但是由於其進行蝕刻時，一次製程中僅能針對一個蝕刻卡 1321815 匣内之TFT LCD玻璃基板進行蝕刻、二次清洗及烘乾等步 驟，若要進行二個蝕刻卡匣内TFT LCD用玻璃基板之蝕刻 ，則必須要於第一個蝕刻卡匣内之TFT LCD用玻璃基板於 蝕刻槽中蝕刻之後，以第一及第二快速拋洗槽進行二次清 洗，且藉由乾燥槽予以烘乾之後，再取第二個蝕刻卡匣内 之TFT LCD用玻璃基板於蝕刻槽中進行蝕刻、二次清洗及 烘乾等步驟，而無法於一次製程中完成二個蝕刻卡匣内 TFT LCD用玻璃基板之蝕刻，而造成蝕刻時間增加以及蝕 # 刻過程繁複之情形發生。 【發明内容】 因此，本發明之主要目的係在於，可於一次製程中同 時完成二個承載厘之多數TFTLCD玻璃基板之韻刻，達至 縮短蝕刻時間及簡化蝕刻過程之功效。 為達上述之目的’本發明係—種TFTLCD玻璃基板之 侧裳置及其㈣方法，雜㈣置包含至少二可供承裁 =刻二LCD玻板之承載g ;二分騎接液體供應 =兀「亂體供應單元及藥劑供應單元之㈣清洗槽；2 为別與液體供應單元及一氣體 9 及-分別盘-氣體_ 2早几連接之清洗槽；以 列方連接之乾燥槽所構成；而盆蝕 刻方法至少包含下列步驟·· 、蚀 提供至少第—及第二承餘 刻>月洗槽，而該第-及第二_清洗槽連接— 兀、-减供應單元及—_供應單元； ，、應早 —承载匣中放置多數TFT LCD 玻璃基I I plate money s ‘Concurrent-nozzle m is sprayed with nitrogen to dry the glass substrate. The automatic etching method mainly comprises the following steps: (A) providing an etching groove, the etching groove is internally provided with a porous foaming device, and the upper side of the foaming device is provided with a plate-carrying device for loading a film The transistor liquid crystal display is placed in the etching tank with a glass substrate main etching chuck, and a processing solution is engraved to name the glass substrate; (B) the thin film transistor liquid crystal display to be etched is used for the glass φ substrate main The etched cassette is placed inside a first rapid rinsing tank, through a spray device for spraying ultrapure water installed inside the first rapid blasting tank, a porous bubbling device for spraying nitrogen gas at the bottom, and An upper portion of the "plate" for cleaning the glass substrate; - (C) placing the glass substrate that has been cleaned in the first rapid cleaning bath into a second rapid cleaning bath, and using The first quick-washing tank repeatedly washes the glass substrate of the first fast-washing tank to be washed in the same manner, and thoroughly cleans the surface of the glass substrate; and (D) the cleaning of the loading is completed. Glass substrate The etched chuck is placed in a drying tank and nitrogen gas is sprayed using a nozzle provided therein to dry the glass substrate. The above-mentioned device and method can achieve the effect of automatically surnamed the glass substrate for TFT LCD. - Although the above-mentioned "auto-etching device and surname method for glass substrate for TFT LCD" can achieve automatic etching of a glass substrate for TFT LCD, since it can be etched, only one etching card 1321815 can be used in one process. The TFT LCD glass substrate is subjected to etching, secondary cleaning, and drying. If etching is performed on the glass substrate for the TFT LCD in two etching cassettes, the TFT LCD glass in the first etching cassette must be used. After the substrate is etched in the etching bath, the first and second rapid cleaning tanks are used for secondary cleaning, and after drying by the drying tank, the glass substrate for the TFT LCD in the second etching cassette is etched. The etching, the second cleaning and the drying are performed in the tank, and the etching of the glass substrate for the TFT LCD in the two etching cassettes cannot be completed in one process, and the etching time is increased and the etching process is complicated. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to complete the rhyme of a plurality of TFT LCD substrates carrying a plurality of TFT substrates simultaneously in one process, thereby shortening the etching time and simplifying the etching process. In order to achieve the above purpose, the present invention relates to a side of a TFT LCD glass substrate and the method thereof (4), wherein the impurity (four) arrangement comprises at least two load-bearing g for the undercut = two LCD glass plates; two-point riding liquid supply = 兀(4) cleaning tanks of the chaotic supply unit and the medicine supply unit; 2 is a cleaning tank which is connected to the liquid supply unit and a gas 9 and a disc-gas _ 2; and is formed by a drying tank connected by a row; The pot etching method comprises at least the following steps: the etch provides at least a first and a second residual condition > month washing tank, and the first and second_cleaning tank connections - 兀, - minus supply unit and -_ supply Unit; ,, should be placed in the early load-bearing 多数, most TFT LCD glass base
步驟二：先於第一 板’將弟一承恭际软λ 步驟三：Step 2: Before the first board, the younger brother will accept the soft λ step three:
清洗， 清洗，並同時於第二承載匣中放置多數 尤僧T ’進行二次 TPT LCD玻璃基 、主味揭—承载匿移入第二姓刻清洗槽中’並使第二钱刻 =槽以液體供應單元、氣體供應單元及_供應單元對 第-承载g中之多數TFT LCD玻璃進行银刻並作初步清 洗； 步驟四：將清洗完成後第一承載匣中之多數TFTlCd 玻璃基板移入於分別連接氣體供應單元之乾燥槽中，進行 烘乾，藉以完成第一承載匡中多數TFTLCD玻璃基板之蝕 刻，並同時將钱刻及初步清洗後第二承载匣中之多數 LCD玻璃基板移入於上述清洗槽中進行二次清洗；以及 步驟五.再將清洗完成後第二承载！中之多數TFT LCD玻璃基板置入於上述乾燥槽中，進行烘乾，择以完成 第二承載匣中多數TFT LCD玻璃基板之蝕刻。 【實施方式】 清參閱『第一、二、二及第四圖』所示，係分別為本 發明之基本架構示意圖、本發明之蝕刻清洗槽示意圖、本 13218.15 為_ 發明之清洗槽示意圖及本發明之乾燥槽示意圖。如圖戶斤 示：本發明係一種TFT LCD玻璃基板之蝕刻裝置，其係由 至少二承載匣1 〇 1、1 〇 1 a、二蝕刻清洗槽1、1 a、 一清洗槽2、以及一乾燥槽3所構成，可於一次製程中同 時完成二個承載匣之多數TFT LCD玻璃基板之蝕刻，達到 縮短钱刻時間及簡化蝕刻過程之功效。 上述所提承載匣1 〇 1、1 0 1 a係可供承載欲蝕刻之 TFT LCD玻璃基板’而各承載匣1 〇 1、1 〇 1 a係可至 • 少定義為一第一承載匣1 〇 1及一第二承載匣1 〇 la。 各钱刻清洗槽1、1a係可至少定義為一第一餘刻清洗 槽1及一第二蝕刻清洗槽1 a ’各蝕刻清洗槽1、1 a可供 谷置上述承载TFTLCD玻璃基板之第一及第二承載匣1 〇 - 1、1 0 la，且該第一及第二蝕刻清洗槽1、la係分別 連接一液體供應單元1 〇、一氣體供應單元丄丄及一藥劑 供應單元1 2，且該第一及第二蝕刻清洗槽ii a之二 參侧係分別具有連接一泵浦1 3 1、丄3 la之衝擊單元工 3、 1 3a，各衝擊單元工3、1 3a係分別具有一推出口 1 3 3、1 3 3a，並於推出口 133、133a處具有一 設置於第一及第二蝕刻清洗槽1、la二侧之衝擊板1 3 4、 1 3 4a，且該衝擊板1 3 4、1 3 4a上係具有多數 孔隙，並於第一及第二蝕刻清洗槽丄、la之底部兩侧分 . 別具有一吸入口 1 3 2、1 3 2a且亦與該泵浦丄3工、 1 3 1 a做連接；另該第一及第二蝕刻清洗槽丄、^ a係分 別係連通有一進水管14、l4a、出水管15、15a， 另各，^ 1 4、1 4a係與該_供應單元1 2連接， <系分別與—連接該藥劑供應單元 •1之㈣槽i 7連接，並於該第一及第二罐洗槽内 之上=端係分別具有—與液體供應單元10連通 應單元1 1 8&’且另—端係分別具有—與液體供 ’以旱疋1〇及一氣體供雍置分1 1 土 -,Q 供應早70 1 1連通之下喷嘴組1 9、 丄y a 〇 清洗槽2係分別與上述液體供應單元1 Q及-氣體 二Ί疋1 1連接，可供容置上述承載TFT LCD玻璃基 =-及第二承载£1〇1、1〇la，且該清洗槽2係 、it水管2 2、出水管2 3，該進水管2 2連接於 ㈣供應單元1 Q而出水管2 3係供排廢水，並於該清洗 槽2内部之二侧係、分別具有連接—泵浦2◦之衝擊單元2 8各衡擊單元2 8係分別具有—推出口 2 9 ,並於推出 口 2 9處具有一設置於清洗槽2二側之衝擊板2 8丄，且 “衝擊板2 8 1上係具有多數孔隙，並於清洗槽2之底部 具有I吸入口 3 0且與該泵浦2 0做連接，並於該清洗槽 2内部之一端係具有一與液體供應單si 〇連通之上喷嘴 組2 6，且該清洗槽2之底部係具有與氣體供應單元工工 及液體供應單元1 0連通之下喷嘴組2 7。 該乾燥槽3係與上述氣體供應單元1 1連接，可供容 置上述承载TFT LCD玻璃基板之第一及第二承载匣1〇 1、1 0 la，而該乾燥槽3係連通有一排水管3 2，且該 乾燥槽3内部之二側係分別具有與氣體供應單元丨i連通 13218.15 " 之風刀組3 3。如是，藉由上述之結構構成一全新之tft LCD玻璃基板之姓刻裝置。 請參閱『第五圖』所示，係本發明蝕刻之使用方法示 意圖。如圖所示：本發明TFT LCD玻璃基板之蝕刻方法， 其至少運用下列步驟： 步驟一：提供具有上述第一及第二承載匣1〇1、1 0 1 a、第一及第二蝕刻清洗槽、1、1 a、清洗槽2與乾 燥槽3構造之蝕刻裝置。Cleaning, cleaning, and at the same time placing the majority in the second load-carrying 僧T' for the secondary TPT LCD glass base, the main taste is uncovered - the load is hidden into the second surviving cleaning tank' and the second money is engraved = slot The liquid supply unit, the gas supply unit and the supply unit perform silver engraving and preliminary cleaning on a plurality of TFT LCD glass in the first carrier g; Step 4: moving a plurality of TFT1Cd glass substrates in the first carrier after cleaning to respectively Connecting the drying tank of the gas supply unit to perform drying, thereby completing etching of a plurality of TFT LCD glass substrates in the first carrier, and simultaneously moving a plurality of LCD glass substrates in the second carrier after the cleaning and preliminary cleaning into the cleaning Perform secondary cleaning in the tank; and step 5. Then complete the second load after cleaning! Most of the TFT LCD glass substrates are placed in the drying tank to be dried, and the etching of most of the TFT LCD glass substrates in the second carrier is completed. [Embodiment] The following is a schematic diagram of the basic structure of the present invention, a schematic diagram of the etching cleaning tank of the present invention, and a schematic diagram of the cleaning tank according to the invention of 13218.15. Schematic diagram of the drying tank of the invention. As shown in the figure, the present invention is an etching device for a TFT LCD glass substrate, which is composed of at least two carriers 匣1 〇1, 1 〇1 a, two etching cleaning tanks 1, 1 a, a cleaning tank 2, and a The drying tank 3 is configured to simultaneously perform etching of a plurality of TFT LCD glass substrates carrying two crucibles in one process, thereby achieving the effect of shortening the time and simplifying the etching process. The above-mentioned carrier 匣1 〇1, 1 0 1 a is capable of carrying a TFT LCD glass substrate to be etched, and each carrier 匣1 〇1,1 〇1 a can be defined as a first carrier 匣1 〇1 and a second carrier 匣1 〇la. Each of the cleaning grooves 1, 1a can be defined as at least a first remaining cleaning tank 1 and a second etching cleaning tank 1 a 'each etching cleaning tank 1, 1 a can be placed in the above-mentioned TFT LCD substrate The first and second etch cleaning tanks 1 , 1a are respectively connected to a liquid supply unit 1 , a gas supply unit 丄丄 and a medicament supply unit 1 2, and the two side sides of the first and second etching cleaning tanks ii a respectively have an impact unit 3, 1 3a connected to a pump 1 3 1 , 丄 3 la , and each impact unit 3, 1 3a Each has a push port 1 3 3, 1 3 3a, and has an impact plate 1 3 4, 1 3 4a disposed on the first and second etching cleaning tanks 1 and 1a at the ejection openings 133 and 133a, and The impact plate 1 3 4, 1 3 4a has a plurality of pores, and is divided on both sides of the bottoms of the first and second etching cleaning tanks, la. There is a suction port 1 3 2, 1 3 2a and also The pumping device is connected to the first and second etching cleaning tanks, and the first and second etching cleaning tanks are connected to an inlet pipe 14, 14a, and an outlet pipe 15, 15a, respectively. Further, ^1 4, 1 4a is connected to the _ supply unit 12, and is connected to the (4) slot i7 of the drug supply unit 1 and connected to the first and second tanks. The inner upper = end system respectively has - communicates with the liquid supply unit 10, the unit 1 1 8 & 'and the other end system has - and the liquid supply 'to the drought 1疋 and one gas supply to divide the 1 1 soil - , Q supply early 70 1 1 connected nozzle group 1 9, 丄ya 〇 cleaning tank 2 is respectively connected with the above liquid supply unit 1 Q and - gas diode 1 1 for accommodating the above-mentioned carrier TFT LCD glass base =- and the second load £1〇1,1〇la, and the cleaning tank 2, the water pipe 2, the outlet pipe 2 3, the inlet pipe 2 2 is connected to the (4) supply unit 1 Q and the outlet pipe 2 3 The waste water is supplied and discharged, and the impact unit of each of the two sides of the cleaning tank 2 has a connection-pumping unit 2, and each of the weighing units 28 has a pushing port 2 9 and a pushing port 2 9 respectively. There is an impact plate 28 设置 disposed on two sides of the cleaning tank 2, and the "impingement plate 281 has a plurality of pores, and has an I suction port 30 at the bottom of the cleaning tank 2 and The pump 20 is connected, and one end of the cleaning tank 2 has a nozzle group 2 6 connected to the liquid supply unit si 且 and the bottom of the cleaning tank 2 has a gas supply unit and The liquid supply unit 10 is connected to the lower nozzle group 2 7 . The drying tank 3 is connected to the gas supply unit 11 to accommodate the first and second carriers 匣1〇1 and 1 of the TFT-coated glass substrate. 0 la, and the drying tank 3 is connected to a drain pipe 32, and the inner sides of the drying tank 3 respectively have a wind knife group 33 connected to the gas supply unit 丨i 13218.15 ". If so, the above structure constitutes a brand new tft LCD glass substrate surname device. Referring to the "figure 5", it is a schematic illustration of the method of use of the etching of the present invention. As shown in the figure: the etching method of the TFT LCD glass substrate of the present invention uses at least the following steps: Step 1: providing the first and second carrier 匣1〇1, 1 0 1 a, first and second etching cleaning An etching device configured as a tank, 1, 1 a, a cleaning tank 2, and a drying tank 3.
參 步驟二：先於第一承載匣1〇1中放置多數TFT LCD 玻璃基板4 ’並將該第一承載gi 〇 1移入第一银刻清洗 槽1 ’由樂劑供應早元1 2配合進水管1 4做為第一银刻 ' 清洗槽1中藥劑之供應，並啟動泵浦1 3 1，使衝擊單元 1 3利用其吸入口 1 3 2及推出口 1 3 3及衝擊板1 3 • 4 ’以一吸一推並且利用孔隙產生擠壓之方式使藥劑均勻 產生撞擊，同時以氣體供應單元1 1所連通之下噴嘴組1 ^ 9做為蝕刻時產生氣泡之用，使該氣泡之產生可由第一蝕 刻清洗槽1下方衝擊TFT LCD玻璃基板4表面及盲孔中之 殘渣，藉以利用第一蝕刻清洗槽1對TFT LCD玻璃基板4 進行钱刻’並使第一姓刻清洗槽1之出水管1 5將蝕刻後 之藥劑傳輸至暫存槽17做為暫存及回收；之後由液體供 應單疋1 0配合上噴嘴組i 8與下喷嘴組i 9做為清洗液 之供應，且由與氣體供應單元1 1連通之下喷嘴組1 9做 為/月洗日守產生氣泡之用，使該氣泡之產生可由第一钱刻清 洗槽1下方衝擊TFT LCD玻璃基板4表面及盲孔中之殘 1321815 渣，並啟動泵浦1 3 1，使衝擊單元1 3利用其吸入口 1 32、推出口 133及衝擊板1 3 4，以一吸一推並且利 用孔隙產生擠壓之方式使清洗液均勻產生撞擊，藉以利用 第一蝕刻清洗槽1對TFT LCD玻璃基板4進行作初步清 洗。 步驟三：將蝕刻及初步清洗後第一承載匣1〇1中之 TFT LCD玻璃基板4移入於清洗槽2，使該清洗槽2利用 上喷嘴組2 6與下噴嘴組2 7配合液體供應單元1 0做為 φ 清洗液之供應，且以該清洗槽2底部之下喷嘴組2 7配合 氣體供應單元1 1做為清洗液供應時產生氣泡之用，使該 氣泡之產生可由清洗槽2下方衝擊TFT LCD玻璃基板4表 • 面及盲孔中之殘渣，並啟動泵浦2 0，使衝擊單元2 8利 • 用其吸入口 3 0、推出口 2 9及衝擊板2 8 1，以一吸一 推並且利用孔隙產生擠壓之方式使清洗液均勻產生撞擊， 而對TFT LCD玻璃基板4進行二次清洗’而該出水管2 3 係做為清洗後廢水之排放；並同時於第二承載匣1 〇 1还 鲁中再放置多數TFT LCD玻璃基板4a，利用藥劑供應單元 1 2配合進水管1 4 a做為第二蝕刻清洗槽1 a中藥劑之供 應’並啟動泵浦1 3 1a，使衝擊單元1 3 a利用其吸入口 132a、推出口 13 3a及衝擊板1 3 4a，以一吸一推並 且利用孔隙產生擠壓之方式使藥劑均勻產生撞擊，且同時 以氣體供應單元1 1所連通之下噴嘴組1 ga做為蝕刻時 產生氣泡之用’使該氣泡之產生可由第二蝕刻清洗槽1a 下方衝擊TFT LCD玻璃基板4 a表面，藉以利用第二姓刻 12 1321815 清洗槽1 a對TFT LCD玻璃基板4 a進行蝕刻，並使第二 姓刻清洗槽1 a之出水管1 5 a將姓刻後之藥劑傳輸至暫存 槽1 7做為之暫存及回收；之後由液體供應單元1 〇配合 上喷嘴組1 8a與下噴嘴組1 9a做為清洗液之供應，且由 與氣體供應單元1 1連通之下喷嘴組1 9a做為清洗時產 生氣泡之用，使該氣泡之產生可由第二餘刻清洗槽1 a下 方衝擊TFT LCD玻璃基板4 a表面及盲孔中之殘渣，並啟 動衝泵浦1 3 la，使衝擊單元1 3a利用其吸入口 1 3 2 • a、推出口 1 3 3a及衝擊板1 3 4a，以一吸一推並且利用 孔隙產生擠壓之方式使清洗液均勻產生撞擊，藉以利用第 二蝕刻清洗槽1 a對TFT LCD玻璃基板4 a進行作初步清 . 洗。Step 2: Place a plurality of TFT LCD glass substrates 4' in the first carrier 匣1〇1 and move the first carrier gi 〇1 into the first silver cleaning tank 1 'fitted by the agent supply early 1 2 The water pipe 14 is used as the first silver inscription to clean the supply of the medicament in the tank 1, and the pump 13 1 is activated, so that the impact unit 13 uses its suction port 1 3 2 and the push port 1 3 3 and the impact plate 13 • 4 'The impact of the suction and the use of the pores to make the agent uniformly impact, while the nozzle group 1 ^ 9 connected by the gas supply unit 1 1 is used as an etch to generate bubbles, so that the bubble The surface of the TFT LCD glass substrate 4 and the residue in the blind hole may be impinged under the first etching cleaning bath 1 , so that the TFT LCD glass substrate 4 is etched by the first etching cleaning bath 1 and the first surname is cleaned. The outlet pipe 15 transports the etched agent to the temporary storage tank 17 for temporary storage and recovery; and then the liquid supply unit 10 matches the upper nozzle group i 8 and the lower nozzle group i 9 as a supply of the cleaning liquid. And the nozzle group 19 is connected to the gas supply unit 1 1 as a monthly washing For the use of the bubble, the bubble can be generated by the first cleaning of the groove 1 below the surface of the TFT LCD glass substrate 4 and the residue 1321815 in the blind hole, and the pump 13 1 is activated, so that the impact unit 13 can be inhaled by the suction unit 13 The mouth 1 32, the push-out port 133 and the impact plate 134 are uniformly sucked by suction and suction by means of the pores, so that the first etching cleaning tank 1 is used for the TFT LCD glass substrate 4 Initial cleaning. Step 3: After the etching and preliminary cleaning, the TFT LCD glass substrate 4 in the first carrier 匣1〇1 is moved into the cleaning tank 2, so that the cleaning tank 2 is matched with the liquid supply unit by the upper nozzle group 26 and the lower nozzle group 27. 1 0 is used as the supply of the φ cleaning liquid, and the bubble group is generated when the nozzle group 27 is used as the cleaning liquid supply under the bottom of the cleaning tank 2, so that the bubble can be generated by the cleaning tank 2 Impacting the surface of the TFT LCD glass substrate 4 and the residue in the blind hole, and starting the pump 20 to make the impact unit 28 8 • use the suction port 30, the push port 2 9 and the impact plate 2 8 1 Squeeze and use the pores to produce a squeeze to uniformly cause the cleaning liquid to collide, and the TFT LCD glass substrate 4 is subjected to secondary cleaning', and the outlet pipe 2 3 is used as the discharge of the cleaned wastewater; The carrier 匣1 〇1 is further placed in a plurality of TFT LCD glass substrates 4a, and the medicine supply unit 12 is used to fit the inlet pipe 1 4 a as the supply of the medicinal agent in the second etching cleaning tank 1 a and the pump 1 3 1a is started. , the impact unit 13 3 a uses its suction port 132a, the ejection port 1 3 3a and the impact plate 1 3 4a, the suction is uniformly applied by the suction and the extrusion is performed by the pores, and at the same time, the bubble is generated when the nozzle group 1 ga is connected under the gas supply unit 11 The use of 'the bubble can be generated by the second etching cleaning bath 1a below the surface of the TFT LCD glass substrate 4a, thereby etching the TFT LCD glass substrate 4a with the second surname 12 1321815 cleaning bath 1 a, and The second surname is used to clean the water outlet of the tank 1 a 1 a to transfer the agent after the last name to the temporary storage tank 7 as a temporary storage and recovery; then the liquid supply unit 1 〇 is matched with the upper nozzle group 18 8a and the lower nozzle The group 19a is used as a supply of the cleaning liquid, and is used for generating bubbles when the nozzle group 19a is in communication with the gas supply unit 1 1 so that the bubble can be generated by the second remaining cleaning tank 1a. The surface of the TFT LCD glass substrate 4a and the residue in the blind hole, and the pump 1 3 la is activated, so that the impact unit 13 3a uses its suction port 1 3 2 • a, the ejection port 1 3 3a and the impact plate 1 3 4a, Cleaning by suction and by means of pores The liquid uniformly collides, whereby the TFT LCD glass substrate 4a is subjected to preliminary cleaning by the second etching cleaning bath 1a.
. 步驟四：將清洗完成後第一承載匣1 0 1中之TFT LCD玻璃基板4置入於乾燥槽3中，利用該乾燥槽3内部 二侧之風刀組3 3配合氣體供應單元1 1產生風力做為進 行烘乾之使用，並使烘乾時所滴落之廢水由該乾燥槽3之 排水管3 2排放出去’藉以完成TFT LCD玻璃基板4之蝕 刻；並同時將第二承載匣1 0 i a中蝕刻及初步清洗後之 TFT LCD玻璃基板4 a移入於上述清洗槽2中，使該清洗 槽2利用上喷嘴組2 6與下噴嘴組2 7配合液體供應單元 1 0做為清洗液之供應，且以該清洗槽2底部之下喷嘴組 2 7配合氣體供應單元1 1做為清洗液供應時產生氣泡之 用，使該氣泡之產生可由清洗槽2下方衝擊TFTLCD玻璃 基板4a表面及盲孔中之殘渣，並啟動泵浦2 〇，使衝擊 13 1321815 -， " 單元28利用其吸入口 30、推出口 29及衝擊板28 1，以/吸，推並且利用孔隙產生擠壓之方式使清洗液均 句產生撞擊，而對TFT LCD玻璃基板4 a進行二次清洗， 而該出水管2 3係做為清洗後廢水之排放。 步驟五：再將清洗完成後第二承載匣1 0 1 a中之TFT LCD玻璃恭板4a移入於上述乾燥槽3中，利用該乾燥槽 3内部二侧之風刀組3 3配合氣體供應單元1 1產生風力 做為進行烘乾之使用’並使烘乾時所滴落之廢水由該乾燥 • 槽3之排水管3 2排放出去，藉以完成TFT LCD玻璃基板 4 a之蝕刻。 综上所述’本發明TFTLCD玻璃基板之蝕刻裝置及其 ' 蝕刻方法町有效改善習用之種種缺點’可於一次製程中同 . 時完成二個承載！之多數TFTLCD玻璃基板之蝕刻’達到 縮短钕刻時間及簡化餘刻過程之功效，進而使本發明之產 生能更進步、更實用、更符合使用者之所須，確已符合發 明專利申請之要件，妥依法提出專利申請。 惟以上所述者’僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍；故，凡依本發明申請專利 範圍及發明說明書内容所作之簡單的等效變化與修飾，皆 應仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 第一圖，係本發明之基本架構示意圖。 第二圖，係本發明之蝕刻清洗槽示意圖。 14 1321815 第三圖，係本發明之清洗槽示意圖。 第四圖，係本發明之乾燥槽示意圖。 第五圖，係本發明蝕刻之使用方法示意圖。 【主要元件符號說明】 第一蝕刻清洗槽1 第二蝕刻清洗槽1 a 液體供應單元10 第一承載匣101 第二承載匣1 0 1 a 氣體供應單元11 藥劑供應單元1 2 衝擊單元1 3、1 3 a、2 8 泵浦 131、131a、20 吸入口 132、132a、30 推出口 133、133a、29 衝擊板 134、134a、281 進水管1 4、1 4 a 出水管15、15a 暫存槽1 7 上喷嘴組18、18a、26 下喷嘴組19、19a、27 15 1321815 ~ 清洗槽2 進水管2 2 出水管2 3 乾燥槽3 排水管3 2 風刀組3 3 TFT玻璃基板4、4Step 4: After the cleaning is completed, the TFT LCD glass substrate 4 in the first carrier 匣1 0 1 is placed in the drying tank 3, and the gas supply unit 1 3 is matched with the air knife unit 3 3 on the inner side of the drying tank 3 The wind is generated for drying, and the waste water dripped during the drying is discharged from the drain pipe 32 of the drying tank 3 'to complete the etching of the TFT LCD glass substrate 4; and at the same time, the second load 匣The TFT LCD glass substrate 4a after etching and preliminary cleaning in the 10 ia is moved into the cleaning tank 2, so that the cleaning tank 2 is cleaned by the upper nozzle group 26 and the lower nozzle group 27 in combination with the liquid supply unit 10 The supply of the liquid is generated by the nozzle group 27 under the bottom of the cleaning tank 2 and the gas supply unit 1 1 is used as the cleaning liquid, so that the bubble can be generated by the lower surface of the cleaning tank 2 and the surface of the TFT LCD glass substrate 4a. And the residue in the blind hole, and start the pump 2 〇, so that the impact 13 1321815 -, " unit 28 uses its suction port 30, the ejection port 29 and the impingement plate 28 1, to suck, push and use the pores to produce the extrusion In a way that causes the cleaning fluid to collide, and TFT LCD glass substrate 4 a secondary cleaning system and the outlet pipe 23 as the waste water discharged after cleaning. Step 5: After the cleaning is completed, the TFT LCD glass panel 4a of the second carrier 匣1 0 1 a is moved into the drying tank 3, and the air knife unit 3 3 on the inner side of the drying tank 3 is used to match the gas supply unit. 1 1 The use of wind power for drying is used, and the waste water dripped during drying is discharged from the drain pipe 32 of the drying tank 3, thereby completing the etching of the TFT LCD glass substrate 4a. In summary, the etching apparatus of the TFTLCD glass substrate of the present invention and its 'etching method can effectively improve various disadvantages of the conventional use' can complete two loads in one process! The etching of most TFTLCD glass substrates has the effect of shortening the engraving time and simplifying the process of the engraving, thereby making the invention more progressive, more practical and more suitable for the user, and has indeed met the requirements of the invention patent application. , file a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the description of the present invention All should remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of the basic structure of the present invention. The second figure is a schematic view of the etching cleaning bath of the present invention. 14 1321815 The third figure is a schematic view of the cleaning tank of the present invention. The fourth figure is a schematic view of the drying tank of the present invention. The fifth figure is a schematic diagram of the method of using the etching of the present invention. [Description of main component symbols] First etching cleaning tank 1 Second etching cleaning tank 1 a Liquid supply unit 10 First carrier 101 First carrier 匣 1 0 1 a Gas supply unit 11 Pharmaceutical supply unit 1 2 Impact unit 1 3 1 3 a, 2 8 pump 131, 131a, 20 suction port 132, 132a, 30 push port 133, 133a, 29 impact plate 134, 134a, 281 inlet pipe 1 4, 1 4 a outlet pipe 15, 15a temporary storage slot 1 7 Upper nozzle group 18, 18a, 26 Lower nozzle group 19, 19a, 27 15 1321815 ~ Cleaning tank 2 Inlet pipe 2 2 Outlet pipe 2 3 Drying tank 3 Drain pipe 3 2 Air knife group 3 3 TFT glass substrate 4, 4