1320192 侧壁 14 螢光^ 15 陽極層 16 頂層 17 圓柱體 18 錐形尖端 19 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式： 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種高亮度照明光源’特別係關於一種高亮度場發射發光照明 光源。 【先前技^标】 人工照明光源一般可分為白熱燈、放電燈及固態光源，包括白織燈，螢光燈 管，LED，鹵素燈，高壓氣體放電燈扭p)等各種照明光 源。其中，白熾燈係鎢絲通電後發熱發光，同時產生大量熱量，其發光效率較低 (約8_151m/w) ’亮度有限’一般用於曰常生活照明；螢光燈管採用放電激發汞蒸 汽發出紫外線打到螢光材料上發出可見光，一般用於普通日常生活照明，其優點 係發光效率问(達到801m/w) ’缺點係含有采，對環境及人體有害，因而不適合環 保要求，LED係一種固態光源，包括各種紅光LED、黃光LED、藍光LED及 白光LED，其優點包括反應速度快、體積小、無污染缺點係發光效率低(約 20-301m/w)，目前應用於車内照明、裝飾彩燈等；函素燈及皿^係目前汽車頭 1320192 利於形成氮化矽層13，即為後者提供成核條件。 所述氮化碎層13係一絕緣層，其係由31]^沈積而成。 所述電子發射體之圓柱體18與該氮似夕層13係由相同材料組成，所述錐形 尖端19係由鉬金屬組成。其中，圓柱體18係與氮化石夕層13係一整體可先通 過化學氣相沈積法、賴輔助化學氣相沈積法、離子束麵等方法形成一厚度較 厚之氮化石夕層，再以化學蝕刻等方法形成所述圓柱體18，並保留一部分即氮化 矽層13 ;娜魏19储&麵法、雜麵繼子束麵料城積而成， 與圓柱體18緊密結合。 所述螢光層15係包括有螢光材料，當有電子轟擊時產生可見光。 所述陽極層16可由ΓΓΟ(銦錫氧化物)導電薄膜組成。 所述頂層17係透明層，可由透明玻璃板製成。 請-併第三圖’係-奈米電子發射體找大示意圖，其中，圓柱體18之直 徑d2為關0奈来細内；錐形尖卿底部較大直徑細柱體職徑相等， 即為d2，上部較小直徑dl為a5_1〇奈米範圍内；奈米電子發射體之整體高度（即 圓柱體18與錐开>尖端19總高度）h為100—2000奈米範圍内。 3使用時，施加不同電廢於導電層u及陽歸16，從而於真空空間内形成電 場’在電場作用下’奈米電子發射體之錐形尖端19發射f子爲擊營规Μ而發 出可見光。由於奈米電子發射齡口之圓柱體18與氮化石夕層13係一整體 二 端麵柱體緊密結合，故，其可承受較大電場作用力而不損壞。因此，本發 明場發射照明光源可承受更強電場，場發射電流提高，可發出更冑亮度可見光 請參見第二圖，係本發明第二實施例之場發射_光源2g .圖。其結 及製備方法鮮-實施爾目似。該場發射酬光源2 ； 21 . H 祕材料組成，導電層22由導電金屬銅、銀或金組成； 一氮姆層23形成於該導電層22表面，並且該氮化石夕層23向外延伸出 =1山8 ’所趨_ 23及該圓柱體18由SiNx組成；複數由齡屬組成德 形大知19分別形成於該圓柱體18頂部，用以發射電子。1中 ^ ^100 ; 19 ㈣痛專，即為d2，上部較小直徑dl為㈣奈米範圍内；其整體高度^ 1320192 圓柱咖與錐形尖端19總高度）h為··奈米範圍内 π，其與所述奈来電子發射體蜂形尖端19間隔開 另 = 包括頂: 於該頂層17細_加知s，-細15频輯^^ = 成 另外，稷數侧壁14將該場發射照明光源2〇密封並支嫁所 $ = 一内部真空空間。 負層17，k而形成 使用時，施加不同電壓至導電層22及陽歸16，從 15 發料絲。_== 承又強ι祕麻發出兩免度可見光，並且不易受電場作用(^壞發 综上所述，本發财已符合發日月專利之要件，遂依法提出專利申請。惟以 上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利細。舉 熟悉本案技藝之人士援依本發明球神所作之等效_或變化，皆應涵蓋於^ 申請專利範圍内。 、Γ 【圖式簡單說明】 第一圖係本發明第一實施例之剖面示意圖； 第二圖係本發明第二實施例之剖面示意圖； 第三圖係本發明電子發射體之局部放大示意圖。 【主要元件符號說明】 場發射照明光源 10 »20 導電層 11，22 成核層 12，21 氮化石夕層 13 >23 侧壁 14 螢光^ 15 陽極層 16 頂層 17 圓柱體 18 錐形尖端 191320192 Side wall 14 Fluorescent ^ 15 Anode layer 16 Top layer 17 Cylinder 18 Tapered tip 19 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: Nine, invention description: [Technical field of invention] The present invention relates to a high brightness illumination source, in particular to a high brightness field emission illumination source. [Previous technical standards] Artificial lighting sources can be generally divided into white heat lamps, discharge lamps and solid state light sources, including white woven lamps, fluorescent tubes, LEDs, halogen lamps, high-pressure gas discharge lamps and other lighting sources. Among them, the incandescent lamp is heated and illuminates after being energized, and generates a large amount of heat at the same time, and its luminous efficiency is low (about 8 _151 m/w). 'Brightness limited' is generally used for 生活 normal living lighting; fluorescent tube emits mercury vapor by discharge. Ultraviolet rays are emitted onto the fluorescent material to emit visible light, which is generally used for ordinary daily life lighting. Its advantages are luminous efficiency (up to 801m/w). 'The disadvantages are mining, harmful to the environment and human body, so it is not suitable for environmental protection. LED is a kind. Solid-state light source, including various red LEDs, yellow LEDs, blue LEDs and white LEDs, has the advantages of fast reaction speed, small volume, no pollution, low luminous efficiency (about 20-301m/w), and is currently used in interior lighting. , decorative lights, etc.; the light lamp and the dish ^ current car head 1320192 is conducive to the formation of tantalum nitride layer 13, which provides the nucleation conditions for the latter. The nitriding layer 13 is an insulating layer which is deposited by 31]. The cylindrical body 18 of the electron emitter and the nitrogen-like layer 13 are composed of the same material, and the tapered tip 19 is composed of molybdenum metal. Wherein, the cylindrical body 18 and the nitride layer 13 are integrally formed by a chemical vapor deposition method, a Lay-assisted chemical vapor deposition method, an ion beam surface method, etc., to form a thicker layer of nitride layer, and then The cylinder 18 is formed by a chemical etching or the like, and a part of the tantalum nitride layer 13 is retained, and the Nawei 19 storage & surface method and the heterogeneous sub-beam fabric are formed and closely combined with the cylinder 18. The phosphor layer 15 includes a fluorescent material that generates visible light when electron bombardment occurs. The anode layer 16 may be composed of a tantalum (indium tin oxide) conductive film. The top layer 17 is a transparent layer and may be made of a transparent glass plate. Please - and the third figure 'system-nano electron emitters to find a large schematic diagram, in which the diameter d2 of the cylinder 18 is closed to the inside of the inside; the diameter of the larger diameter of the tapered tip is equal, that is, For d2, the upper smaller diameter dl is in the range of a5_1 〇 nanometer; the overall height of the nano electron emitter (ie, the cylinder 18 and the cone opening > the total height of the tip 19) h is in the range of 100-2000 nm. 3 In use, different electricity is applied to the conductive layer u and the positive return 16 to form an electric field in the vacuum space 'under the electric field'. The tapered tip 19 of the nano electron emitter emits a sub-segment Visible light. Since the cylinder 18 of the nano-electron emission age is closely integrated with the nitride-plated layer 13 and the two end-face cylinders, it can withstand a large electric field force without being damaged. Therefore, the field emission illumination source of the present invention can withstand a stronger electric field, and the field emission current is increased to emit more bright light. Please refer to the second figure, which is a field emission_light source 2g according to the second embodiment of the present invention. The combination and preparation method are fresh-implemented. The field emission composition 2; 21 . H secret material composition, the conductive layer 22 is composed of conductive metal copper, silver or gold; a nitrogen layer 23 is formed on the surface of the conductive layer 22, and the nitride layer 23 extends outward The ninth and the cylindrical bodies 18 are composed of SiNx; the plural is composed of the genus genus, and the genus 19 is formed on the top of the cylinder 18 for emitting electrons. 1 中 ^ ^100 ; 19 (4) pain special, that is d2, the upper smaller diameter dl is (four) nanometer range; its overall height ^ 1320192 cylindrical coffee and tapered tip 19 total height) h is · · nm range π, which is spaced apart from the bee-shaped tip 19 of the Neil electron emitter, and includes a top: the top layer 17 is thin _ _ s, - fine 15 frequency ^ ^ = into another, the number of sidewalls 14 The field emission illumination source 2 〇 seals and marries the $ = an internal vacuum space. When the negative layer 17, k is formed, a different voltage is applied to the conductive layer 22 and the anode 16 from the 15 filament. _== Cheng Youqiang 密 secret hemp issued two degrees of visible light, and is not easy to be affected by the electric field (^ bad hair, in summary, the money has been in line with the requirements of the date of the patent, 提出 legally filed a patent application. The description is only a preferred embodiment of the present invention, and it is not possible to limit the patent application of the present invention. Those who are familiar with the skill of the present invention should be covered by the patent equivalent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic sectional view of a first embodiment of the present invention; the second drawing is a schematic sectional view of a second embodiment of the present invention; and the third drawing is a part of the electron emitter of the present invention. Zoom in. [Main component symbol description] Field emission illumination source 10 »20 Conductive layer 11, 22 Nucleation layer 12, 21 Nitride layer 13 > 23 Side wall 14 Fluorescent ^ 15 Anode layer 16 Top layer 17 Cylinder 18 Tapered tip 19