TWI305655B - Field emission type light source and backlight module using the same - Google Patents

Field emission type light source and backlight module using the same Download PDF

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TWI305655B
TWI305655B TW93140950A TW93140950A TWI305655B TW I305655 B TWI305655 B TW I305655B TW 93140950 A TW93140950 A TW 93140950A TW 93140950 A TW93140950 A TW 93140950A TW I305655 B TWI305655 B TW I305655B
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Taiwan
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field emission
light source
layer
backlight module
insulating layer
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TW93140950A
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Chinese (zh)
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TW200625369A (en
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Ga-Lane Chen
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Hon Hai Prec Ind Co Ltd
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1305655 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種光源,尤指一種場發射光源,以及採用該 光源之背光模組。 【先前技術】 人工照明光源一般可分為白熱燈、放電燈及固態光源,包括 白熾燈,螢光燈管,發光二極體(Light Emitting Diode,LED),鹵素 燈’高壓氣體放電燈(High Intensity Discharge, HID)等各種照明光 源《其中,白熾燈係鎢絲通電後發熱發光,同時產生大量熱量, 其發光效率較低(約8-15流明/瓦)’輝度有限,一般用於日常生活 照明;螢光燈管採用放電激發汞蒸汽發出紫外線打到螢光材質上 發出可見光’一般用於普通日常生活照明’其優點係發光效率高(達 到80流明/瓦)’缺點係含有汞,對環境及人體有害,因而不適合 環保要求;LED係一種固態光源’包括各種紅光LED、黃光LED、 藍光LED及白光LED ’其優點包括反應速度快、體積小、無污染, 缺點係發光效率低(約20-30流明/瓦)’目前應用於車内照明、裝飾 彩燈等;豳素燈及HID燈係目前汽車頭燈之主流,尤其係HID燈, 其可發出色溫接近白晝陽光之光纖(HID燈之色溫約 4300K-10000K,陽光色溫6000K),且HID較鹵素燈具有更遠之 視線等優點,惟,HID需將低電壓轉換為23〇〇〇伏高電壓,激發 氤氣發出電絲’織將紐敎在8_伏,供應氤氣燈泡 1305655 發光,故,其需要配合特殊電壓電流轉換設備方可工作,例如美 國專利第6,710,551號及6,781,327號。 2001年1月π日公開的中國大陸發明專利申請第〇〇1〇7813 5 號揭露一種使用奈米碳管之場發射白光源。 請參閱第-®,該白光社要包括:祕陰極之金屬薄膜u, 该金屬薄膜11設置於-下基板1〇上,形成於金屬薄膜u上之導 電聚合物薄膜圖案12,中空結構之奈米碳管15基本垂直固結在導 電♦合物案12上並且—端露出外面以發射電子,以及具有 螢光體16之透明電極17,該透明電極17設置於一透明上基板 下方。使用時’奈米碳管15發射電子A擊螢紐,從而發出可見 光。讀基於場發射的自光源具有電能轉換效率高,發光效率較 高’無污染等優點。 惟,上述場發射光源中奈米碳管係中空結構,受電場作用發 射電子將使τ、米碳管產生變形’使其使用壽命變短。^,因奈米 碳管係依馳著力固定於導絲合㈣膜之上,哺又為中空結 構’故’當場發射電場強度増強時,奈米碳管有可能由於電場作 用力而脫離‘電聚合物細,從而產生損壞,縮短場發射光源之 使用可°P,且’該場發射光源之出光輝度亦不能滿足顯示之進一 步需要。 有4α於此’ S供一種可延長場發射光源使用壽命及高出光輝 度之場發射光源實為必要。 1305655 【發明内容】 本發明之目的在於提供一種使用壽命較長之及高出光輝度場 發射光源。 本發明之另一目的在於提供一種採用上述場發射光源之背光 模組。 本發明之場發射光源包括:一具有一平整表面之基板;一形 成於該基板表面之導電陰極;一絕緣層,設置於該導電陰極上; 複數電子發射體,設置於該絕緣層上,用以發射電子;一陽極層, 其與該導電陰極相隔一定距離;一螢光層,設置於該陽極層表面, 被電子轟擊時可發出可見光,該電子發射體包括一基部與一頂 部,該基部與該絕緣層相連,該基部之材質係類金剛石碳,該頂 部之材質係鈮。 本明之月光模組包括一場發射光源及一與該光源配合之導 光板;該場發射光源包括:一具有一平整表面之基板;一形成於 该基板表面之導電陰極;一絕緣層,設置於該導電陰極上;複數 電子發射體,設置於該絕緣層上,用以發射電子;—陽極層,其 與該導電陰極相隔-定麟;—營光層,設置於該陽極層表面, 被電子轟擊時可發出可見光,該電子發射體包括一基部與一頂 部,該基部與該絕緣層相連’該基部之材質係類金剛石碳,該頂 部之材質係銳。 與先前技術相比,本發明之場發射光源之基部之材質係類金 1305655 剛石碳’頂部之材質係鈮’受電場作用發射電子亦不會產生形變, 即使電場強度增強,電子發射體亦不會損壞,延長使用壽命,且, 該場發射光源具有較高之出光輝度。 【實施方式】 請參閱第二圖’係本發明場發射光源第一實施方式之結構示 意圖。該場發射光源2包括一非金屬基板20,依次堆疊形成於基 板20表面上之成核層21、一導電層22、以及絕緣層23 ;複數奈 米電子發射體24有規則排列形成於該絕緣層23表面;一透明基 板27,其與所述奈米電子發射體24間隔一定距離,一陽極層26 形成於該透明基板27靠近該電子發射體24之表面,一螢光層25 形成於該陽極層26之表面;另外,複數側壁28將該場發射照明 光源2密封並支撐所述透明基板27,且形成一内部真空空間。絕 緣層23材質係類金剛石碳(Diamond-Like Carbon, DLC)。 所述成核層21係由矽組成,厚度非常薄,優選厚度為1微米 以下。由於該基板20係非金屬材質,設置成核層21有利於導電 層22之形成,即為導電層22提供沉積條件。該成核層21係可選 擇層。該導電層22之材質為銅、銀或金之一種。 請一併參閱第三圖,係第二圖中電子發射體之放大示意圖。 奈米電子發射體24係實心結構。如圖所示,奈米電子發射體24 係分別由一基部241與一頂部242構成,該基部241係柱狀體, 該頂部242係錐形尖端。該基部241之材質係類金剛石碳 1305655 (Diamond-Like Carbon,DLC),該頂部242之材質係鈮⑽)。基部 241係直徑d2為10-100奈米之圓柱體;頂部242底部較大直徑與 圓柱體直徑相等,即為d2,上部較小直徑dl為〇·5_1〇奈米範圍内; 奈米電子發射體24之基部241高度為100-2000奈米範圍内,頂部 242高度為10-200奈米範圍内。該基部241採用之材質係類金剛 石碳及該頂部242採用之材質係鈮(Nb),具有較高之硬度及磨損 抗力’使得該電子發射體24具有較長之使用壽命。 所述螢光層25包括有螢光材料,被電子轟擊時可產生可見 光。所述陽極層26由ITCKIndimn Tin Oxide,銦錫氧化物)導電薄 膜組成。所述透明基板27係由透明玻璃製成。 本發明之場發射光源之電子發射體係類金剛石碳,頂部之材 質係鈮,當施加電場時,所激發之電子由基部到達頂部,將加強 電勢差’使更多電子發射出ϋ電子發射體不易產生變形,不 易損壞,可延長其使用壽命且’該場發射絲財較高之出光輝 度。 下文將敘述採用本發明之場發射光源之背光模組。 請參閱第四圖’係本發明之背光模組示意圖。該背光模組4 包括前述場發射光源2與-導光板4〇,該場發射柄、2設置於導 光板40之-角,該導光板4〇包括一出光面41,出光面社具複 數狐形結構43,愈遠離光源2,該弧形結構43之間距愈小,即密 度愈大。 1305655 採用本發明場發射光源之背賴組,因場發射辆、所發出之 輝度較有機電致發光二極體或冷陰極射線管高出1〇至⑴⑻仵 故,該背光模組採用該光源可提高整體輝度。 綜上所述’本發明確已符合㈣專利要件,爰依法提出專利 申請。惟,以上所述者僅為本發明之較佳實施方式,舉凡熟悉本 案技藝之人士,在援依本案發明精神所作之等效修飾或變化:比 應包含於以下之申請專利範圍内。 白 【圖式簡單說明】 第一圖係一種先前技術場發射光源之結構示意圖。 鲁 第二圖係本發明場發射光源第一實施方式之結構示音圖。 第三圖係第二圖中電子發射體之放大示意圖。 第四圊係本發明背光模組之立體示意圖。 【主要元件符號說明】 場發射光源 2 基板 20、3〇 成核層 21 > 32 導電陰極 絕緣層 23 電子發射體 22、31 基部 241 頂部 24 螢光層 25 陽極 242 透明基板 27 侧壁 26 背光模組 4 導光板 28 出光面 41 弧形結構 40 43 101305655 IX. Description of the Invention: [Technical Field] The present invention relates to a light source, and more particularly to a field emission light source, and a backlight module using the same. [Prior Art] Artificial lighting sources can be generally divided into white heat lamps, discharge lamps and solid state light sources, including incandescent lamps, fluorescent tubes, Light Emitting Diodes (LEDs), and halogen lamps 'High-pressure gas discharge lamps (High Intensity Discharge, HID) and other lighting sources. Among them, the incandescent lamp is heated and emits light when it is energized, and generates a large amount of heat. The luminous efficiency is low (about 8-15 lumens/watt). The brightness is limited and is generally used in daily life. Illumination; fluorescent tube uses discharge to excite mercury vapor to emit ultraviolet light to emit fluorescent light to emit visible light 'usually used for ordinary daily life lighting'. Its advantage is high luminous efficiency (up to 80 lumens / watt) 'The disadvantage is that it contains mercury, The environment and the human body are harmful, so it is not suitable for environmental protection requirements; LED is a solid-state light source 'including various red LEDs, yellow LEDs, blue LEDs and white LEDs'. Its advantages include fast response, small size, no pollution, and low luminous efficiency. (About 20-30 lumens / watt) 'Currently used in interior lighting, decorative lights, etc.; halogen lamps and HID lamps are currently the mainstream of automotive headlights, especially HID lamp, which can emit optical fiber with color temperature close to white sun (HID lamp color temperature is about 4300K-10000K, sunlight color temperature 6000K), and HID has farther line of sight than halogen lamp, but HID needs to convert low voltage into 23 volts high voltage, exciting helium to emit electric wire 'weaving 敎 敎 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 No. 6,781,327. A field-emitting white light source using a carbon nanotube is disclosed in Chinese Patent Application No. 1,7813, issued on January π, 2001. Please refer to the --, the white light company should include: a metal film u of the secret cathode, the metal film 11 is disposed on the lower substrate 1 , the conductive polymer film pattern 12 formed on the metal film u, the hollow structure of the nano The carbon nanotube 15 is substantially vertically fixed on the conductive compound 12 and the end is exposed to emit electrons, and the transparent electrode 17 having the phosphor 16 is disposed under a transparent upper substrate. When used, the 'nanocarbon tube 15 emits an electron A to fire the highlight to emit visible light. The self-light source based on field emission has the advantages of high electric energy conversion efficiency and high luminous efficiency without pollution. However, in the above-mentioned field emission light source, the hollow structure of the carbon nanotube system is such that the electrons emitted by the electric field will deform the τ and the carbon nanotubes to shorten the service life. ^, In carbon nanotubes are fixed on the guide wire (4) membrane, and the hollow structure is "when" when the field electric field strength is strong, the carbon nanotube may be separated from the electric field due to the electric field force. The polymer is fine, resulting in damage, shortening the use of the field emission source, and the light emission of the field emission source cannot meet the further needs of the display. There is a need for a field emission source that extends the lifetime of the field emission source and the brightness of the light. 1305655 SUMMARY OF THE INVENTION An object of the present invention is to provide a light source emitting light source having a longer lifetime and a higher luminance. Another object of the present invention is to provide a backlight module using the above field emission light source. The field emission light source of the present invention comprises: a substrate having a flat surface; a conductive cathode formed on the surface of the substrate; an insulating layer disposed on the conductive cathode; and a plurality of electron emitters disposed on the insulating layer To emit electrons; an anode layer spaced apart from the conductive cathode; a phosphor layer disposed on the surface of the anode layer to emit visible light when bombarded by electrons, the electron emitter comprising a base and a top, the base Connected to the insulating layer, the material of the base is diamond-like carbon, and the material of the top is 铌. The moonlight module of the present invention comprises a light source and a light guide plate matched with the light source; the field light source comprises: a substrate having a flat surface; a conductive cathode formed on the surface of the substrate; an insulating layer disposed on the a plurality of electron emitters disposed on the insulating layer for emitting electrons; an anode layer separated from the conductive cathode - a lining; a camping layer disposed on the surface of the anode layer and bombarded by electrons The visible light is emitted, and the electron emitter includes a base and a top, and the base is connected to the insulating layer. The material of the base is diamond-like carbon, and the material of the top is sharp. Compared with the prior art, the material of the base of the field emission light source of the present invention is gold-like 1305655. The material of the top of the carbon stone 'top structure' is not deformed by the electric field, even if the electric field strength is enhanced, the electron emitter is also It will not be damaged, prolong its service life, and the field emission source has a high light output. [Embodiment] Please refer to the second figure, which is a schematic view of the first embodiment of the field emission light source of the present invention. The field emission light source 2 includes a non-metal substrate 20, which sequentially stacks the nucleation layer 21, a conductive layer 22, and the insulating layer 23 formed on the surface of the substrate 20; the plurality of nano electron emitters 24 are regularly arranged to form the insulation. a surface of the layer 23; a transparent substrate 27 spaced apart from the nano-electron emitter 24, an anode layer 26 formed on the surface of the transparent substrate 27 adjacent to the electron emitter 24, and a phosphor layer 25 formed thereon The surface of the anode layer 26; in addition, a plurality of sidewalls 28 seal the field emission illumination source 2 and support the transparent substrate 27, and form an internal vacuum space. The insulating layer 23 is made of Diamond-Like Carbon (DLC). The nucleation layer 21 is composed of ruthenium and has a very small thickness, preferably having a thickness of 1 μm or less. Since the substrate 20 is made of a non-metal material, the provision of the nucleation layer 21 facilitates the formation of the conductive layer 22, i.e., provides the deposition conditions for the conductive layer 22. The nucleation layer 21 is an optional layer. The conductive layer 22 is made of one of copper, silver or gold. Please refer to the third figure together, which is an enlarged schematic view of the electron emitter in the second figure. The nano electron emitter 24 is a solid structure. As shown, the nano-electron emitters 24 are each formed by a base 241 and a top portion 242 which is a columnar body and the top portion 242 is a tapered tip. The material of the base 241 is diamond-like carbon 1305655 (Diamond-Like Carbon, DLC), and the material of the top 242 is 铌 (10). The base 241 is a cylinder having a diameter d2 of 10-100 nm; the larger diameter of the bottom of the top 242 is equal to the diameter of the cylinder, that is, d2, and the upper smaller diameter dl is in the range of 〇·5_1 〇 nanometer; The base 241 of the body 24 has a height in the range of 100-2000 nm and the top 242 has a height in the range of 10-200 nm. The base portion 241 is made of diamond-like carbon and the material 铌 (Nb) used for the top portion 242, and has a high hardness and wear resistance, so that the electron emitter 24 has a long service life. The phosphor layer 25 includes a fluorescent material that produces visible light when bombarded with electrons. The anode layer 26 is composed of an ITCK Indimn Tin Oxide, indium tin oxide conductive film. The transparent substrate 27 is made of transparent glass. The electron emission system of the field emission light source of the present invention is diamond-like carbon, and the material of the top is 铌. When an electric field is applied, the excited electrons reach the top from the base, which will strengthen the potential difference, so that more electrons are emitted and the electron emitter is less likely to be generated. Deformation, not easy to damage, can extend its service life and 'the field emits a higher luminous brightness. A backlight module using the field emission light source of the present invention will be described below. Please refer to the fourth figure for a schematic diagram of the backlight module of the present invention. The backlight module 4 includes the field emission light source 2 and the light guide plate 4, the field emission handle 2 is disposed at an angle of the light guide plate 40, and the light guide plate 4 includes a light exit surface 41. The shape structure 43, the farther away from the light source 2, the smaller the distance between the curved structures 43, that is, the greater the density. 1305655 adopting the back-distribution group of the field emission light source of the present invention, the backlight module adopts the light source because the brightness of the field emission vehicle is higher than that of the organic electroluminescent diode or the cold cathode ray tube by 1〇 to (1)(8). Can improve the overall brightness. In summary, the present invention has indeed met (4) patent requirements and has filed a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims. White [Simple description of the diagram] The first diagram is a schematic diagram of the structure of a prior art field emission source. The second diagram is a structural diagram of the first embodiment of the field emission source of the present invention. The third figure is an enlarged schematic view of the electron emitter in the second figure. The fourth aspect is a three-dimensional schematic diagram of the backlight module of the present invention. [Main component symbol description] Field emission light source 2 Substrate 20, 3〇 nucleation layer 21 > 32 Conductive cathode insulation layer 23 Electron emitter 22, 31 Base 241 Top 24 Fluorescent layer 25 Anode 242 Transparent substrate 27 Side wall 26 Backlight Module 4 light guide plate 28 light-emitting surface 41 curved structure 40 43 10

Claims (1)

I3〇5655 十、申請專利範圍: h 一種場發射光源,其包括: 一具有一平整表面之基板; 一形成於該基板表面之導電陰極; 一絕緣層,設置於該導電陰極上; 複數電子發射體,設置於該絕緣層上,用以發射電子· —陽極層,其與該導電陰極相隔一定距離; , —螢光層,設置於該陽極層表面,被電子轟擊時可 出可見光; $ 其改良在於:該電子發射體包括一基部與一頂部,該 基部與該絕緣層相連,該基部之材質係類金剛石 碳’該頂部之材質係鈮。 2. 如申請專利範圍第丨項所述之場發射光源,其改良在 於:該電子發射體之基部為柱狀體,頂部為錐形體。 3. 如申凊專利範圍第2項所述之場發射光源,其改良在 於:該基部之高度範圍為100〜2000奈米,該頂部之高 度範圍為10〜200奈米。 .如申凊專利祀圍第2項所述之場發射光源,其改良在 於:該基部之直徑範圍為10〜100奈米,該頂部之上底 面直徑範圍為0.5〜1〇奈米。 5·如申請專利範圍第1項所述之場發射光源,其改良在 於:該基板與該絕緣層之間還包括一成核層,該成核層 係由矽材質組成。 6.如申請專利範圍第1項所述之場發射光源,其改良在 於:該絕緣層之材質係類金剛石碳。 •"η •一種背光模組,其包括一場發射光源及一與該光源配合 之導光板,該場發射光源包括: 1305655 一具有一平整表面之基板; 一形成於該基板表面之導電陰極; 一絕緣層,設置於該導電陰極上; 複數電子發射體,設置於該絕緣層上,用以發射電子; 一陽極層,其與該導電陰極相隔一定距離; 一螢光層,設置於該陽極層表面,被電子轟擊時可發 出可見光; 其改良在於:該電子發射體包括一基部與一頂部,該 基部與該絕緣層相連,該基部之材質係類金剛石 碳,該頂部之材質係鈮。 8. 如申請專利範圍第7項所述之背光模組,其改良在於: 該電子發射體之基部為柱狀體,頂部為錐形體。 9. 如申請專利範圍第8項所述之背光模組,其改良在於: 該基部之高度範圍為100〜2000奈米,該頂部之高度範 圍為10〜200奈米。 10. 如申請專利範圍第8項所述之背光模組,其改良在於: 該基部之直徑範圍為10-100奈米,該頂部之上底面直 徑範圍為0.5〜10奈米。 11. 如申請專利範圍第7項所述之背光模組,其改良在於: 該基板與該絕緣層之間還包括一成核層,該成核層係由 石夕材質組成。 12. 如申請專利範圍第7項所述之背光模組,其改良在於: 該絕緣層之材質係類金剛石碳。 12I3〇5655 X. Patent Application Range: h A field emission light source comprising: a substrate having a flat surface; a conductive cathode formed on the surface of the substrate; an insulating layer disposed on the conductive cathode; and a plurality of electron emission a body disposed on the insulating layer for emitting an electron-anode layer spaced apart from the conductive cathode; and a phosphor layer disposed on the surface of the anode layer to emit visible light when bombarded by electrons; The improvement is that the electron emitter comprises a base portion and a top portion, and the base portion is connected to the insulating layer, and the base material is made of diamond-like carbon. 2. The field emission light source of claim 2, wherein the electron emitter has a columnar body at the base and a cone at the top. 3. The field emission source of claim 2, wherein the height of the base ranges from 100 to 2000 nm, and the height of the top ranges from 10 to 200 nm. The field emission light source of claim 2, wherein the base has a diameter ranging from 10 to 100 nm, and the top surface of the top portion has a diameter ranging from 0.5 to 1 nanometer. 5. The field emission light source of claim 1, wherein the substrate and the insulating layer further comprise a nucleation layer, the nucleation layer being composed of a tantalum material. 6. The field emission light source of claim 1, wherein the material of the insulating layer is diamond-like carbon. • a backlight module comprising a field emission source and a light guide plate cooperating with the light source, the field emission source comprising: 1305655 a substrate having a flat surface; a conductive cathode formed on the surface of the substrate; An insulating layer disposed on the conductive cathode; a plurality of electron emitters disposed on the insulating layer for emitting electrons; an anode layer spaced apart from the conductive cathode; a phosphor layer disposed on the anode The surface of the layer emits visible light when bombarded by electrons; the improvement is that the electron emitter comprises a base portion and a top portion, and the base portion is connected to the insulating layer, and the base portion is made of diamond-like carbon, and the material of the top portion is 铌. 8. The backlight module of claim 7, wherein the electron emitter has a base portion and a tapered body at the top. 9. The backlight module of claim 8, wherein the base portion has a height ranging from 100 to 2000 nm, and the top portion has a height ranging from 10 to 200 nm. 10. The backlight module of claim 8, wherein the base has a diameter ranging from 10 to 100 nanometers, and the top surface has a diameter ranging from 0.5 to 10 nanometers. 11. The backlight module of claim 7, wherein the backlight module further comprises: a nucleation layer between the substrate and the insulating layer, the nucleation layer being composed of a stone material. 12. The backlight module of claim 7, wherein the insulation layer is made of diamond-like carbon. 12
TW93140950A 2004-12-28 2004-12-28 Field emission type light source and backlight module using the same TWI305655B (en)

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