CN100583384C - Lighting source - Google Patents

Lighting source Download PDF

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Publication number
CN100583384C
CN100583384C CN200510032870A CN200510032870A CN100583384C CN 100583384 C CN100583384 C CN 100583384C CN 200510032870 A CN200510032870 A CN 200510032870A CN 200510032870 A CN200510032870 A CN 200510032870A CN 100583384 C CN100583384 C CN 100583384C
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CN
China
Prior art keywords
insulating barrier
light source
field emission
illuminating light
conductive cathode
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Expired - Fee Related
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CN200510032870A
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Chinese (zh)
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CN1805112A (en
Inventor
陈杰良
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN200510032870A priority Critical patent/CN100583384C/en
Publication of CN1805112A publication Critical patent/CN1805112A/en
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Publication of CN100583384C publication Critical patent/CN100583384C/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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  • Discharge Lamps And Accessories Thereof (AREA)

Abstract

The invention relates to a light source which comprises a conductive cathode, an anode layer which is distant with the conductive cathode to form a vacuum inner space, a fluorescent layer on the surface of said anode layer to emit visible lift when impacted by the electrons, a insulation layer inside said inner space and near the conductive cathode; and several electron emitters arranged at the surface of said insulation layer. Wherein, each said electron emitter comprises a cylinder and a taper sharp, while the cylinder and the insulation layer are made from similar diamond carbon material and the taper sharp is made from niobium metal. The invention has stable electron emitter, which can bear high electric field to improve the brightness and intension.

Description

Lighting source
[technical field]
The invention relates to a kind of highlight illumination light source, particularly a kind of high brightness field emission light-emitting lighting source.
[background technology]
The artificial light light source generally can be divided into incandescent lamp, discharge lamp and solid state light emitter, comprises incandescent lamp, fluorescent tube, LED, Halogen lamp LED, high-voltage gas discharging light (High Intensity Discharge, various lighting sources such as HID).Wherein, incandescent lamp is that tungsten filament energising back heating is luminous, produces a large amount of heats simultaneously, its luminous efficiency lower (about 8-15lm/w), and brightness is limited, generally is used for the daily life illumination; Fluorescent tube adopts the discharge excitation mercuryvapour to send ultraviolet ray, gets to and sends visible light on the fluorescent material, generally is used for common daily life illumination, its advantage is luminous efficiency height (reaching 80lm/w), shortcoming is to contain mercury, to environment and human body harmful, thereby is not suitable for environmental requirement; LED is a kind of solid state light emitter, comprise various red-light LEDs, yellow light LED, blue-ray LED and white light LEDs, its advantage comprises that reaction speed is fast, volume is little, pollution-free, shortcoming is luminous efficiency low (about 20-30lm/w), is applied in room light, ornamental festoon lamp etc. at present; Halogen lamp LED and HID lamp are the main flows of present auto bulb, especially HID lamp, it can send the sunlight (colour temperature of the HID lamp about 4300K-10000K of colour temperature near daytime, sunlight colour temperature 6000K), and HID has farther advantages such as sight line than Halogen lamp LED, and still, it is 23000 volts of high voltages that HID needs low voltage transition, excite xenon to send arclight, voltage is stabilized in 8000 volts then, it is luminous to continue the supply Xe lamp bulb, thereby, it need cooperate special voltage current conversion equipment to work, for example United States Patent (USP) the 6th, 710, No. 551 and 6,781, No. 327.
Disclosed Chinese invention patent application on January 17 calendar year 2001 discloses a kind of field emission white light source and manufacture method thereof of using carbon nano-tube for No. 00107813.5.This white light source mainly comprises: as the metallic film of negative electrode, be formed on the conducting polymer thin film pattern on the metallic film, carbon nano-tube substantially vertically is cemented on the conducting polymer thin film pattern and an end exposes the outside with emitting electrons, and the transparency electrode with fluorophor.During use, carbon nano-tube emitting electrons impact fluorescence body, thus send visible light.This white light source based on the field emission has the energy conversion efficiency height, luminous efficiency is higher, advantage such as pollution-free, but, above-mentioned emission white light source is to rely on adhesion strength to be fixed on the conducting polymer thin film because of carbon nano-tube, so, when launching the electric field strength enhancing then and there, carbon nano-tube might break away from conducting polymer thin film owing to electric field action power, damages thereby produce.
In view of this, provide a kind of Stability Analysis of Structures, can bear the higher electric field effect and do not produce damage, and the higher lighting source of luminosity real be necessity.
[summary of the invention]
For solving the problems referred to above of prior art, the object of the present invention is to provide a kind of lighting source, it has Stability Analysis of Structures, can bear the highfield effect and non-damageable characteristics.
For realizing purpose of the present invention, the invention provides a kind of lighting source, it comprises: a conductive cathode; One anode layer, thereby itself and this conductive cathode inner space that forms a vacuum separated by a distance; One fluorescence coating is arranged on this anode layer surface, sends visible light when by electron bombard; One insulating barrier is positioned at the inner space of this vacuum, and near this conductive cathode; And a plurality of electron transmitting terminals, arrange and be formed on this surface of insulating layer; Wherein, these a plurality of electron transmitting terminals comprise a cylinder and a cone point respectively, and this cylinder and this insulating barrier are an integral body, form by the diamond like carbon material with carbon element, and this cone point is made up of conducting metal.
Described cylindrical diameter range is 10~100 nanometers.
Described cone point is to be made by niobium metal.Described cone point top diameter scope is 0.5~10 nanometer.
The altitude range of described electron transmitting terminal is 100~2000 nanometers.
The ratio of height to diameter of described electron transmitting terminal is 10-200, is preferably 20-100.
In addition, also comprise a nucleating layer between this insulating barrier and this conductive cathode, this nucleating layer is made up of silicon materials.This conductive cathode is made by copper, silver or gold.
With respect to prior art, the electron transmitting terminal of lighting source of the present invention is made up of less than the cone-shaped metal of 10 nanometers is most advanced and sophisticated less than the insulative cylinders body and the diameter of 100 nanometers diameter, wherein insulative cylinders body and its insulating barrier are an integral body, Stability Analysis of Structures difficult drop-off or separation, can bear bigger electric field action, and electric field concentrates on the most advanced and sophisticated emitting electrons of described cone-shaped metal, thereby can improve electron emission density, helps improving the brightness and the intensity of light source.
[description of drawings]
Below in conjunction with accompanying drawing the present invention is described in further detail.
Fig. 1 is the generalized section of first embodiment of the invention.
Fig. 2 is the generalized section of second embodiment of the invention.
Fig. 3 is the local enlarged diagram of electron emitter of the present invention.
[embodiment]
See also Fig. 1, first embodiment of the invention provides a kind of lighting source 10, and it comprises and being built up successively at the lip-deep conductive layer 11 of a metallic substrates (figure do not show), a nucleating layer 12 and insulating barrier 13; The regular arrangement of a plurality of nanoelectronic emitters is formed on this insulating barrier 13 surfaces, and each nanoelectronic emitter is made up of cylinder 18 and cone point 19 respectively, and this cylinder 18 is identical with the composition material of this insulating barrier 13, and the two actual be an integral body; One top layer 17, the cone point 19 spaced apart certain distances of itself and described nanoelectronic emitter; One anode layer 16 is formed on the surface of this top layer 17 near this cone point 19; One fluorescence coating 15 is formed on the surface of this anode layer 16 in the face of conductive layer 11.In addition, a plurality of sidewalls 14 are with these lighting source 10 sealings and support described top layer 17, thereby form an inner vacuum space.
Wherein, metallic substrates comprises metal materials such as copper, silver, and its smooth surface is smooth, is beneficial to form conductive layer 11.
Conductive layer 11 and nucleating layer 12 thickness are extremely thin, and preferred thickness is below 1 micron.This conductive layer 11 is as negative electrode, is formed by conductivity good metal material, for example copper, silver or golden.And nucleating layer 12 is made up of silicon, is formed on conductive layer 11 surfaces by siliceous deposits.This nucleating layer 12 helps forming insulating barrier 13, is the latter nucleation condition is provided.Insulating barrier 13 is to be formed by the diamond like carbon carbon laydown.
The cylinder 18 of described electron emitter and this insulating barrier 13 are made up of same material, and described cone point 19 is made up of niobium metal.Wherein, cylinder 18 is an integral body with insulating barrier 13, can form the thicker diamond like carbon carbon-coating of a thickness by methods such as chemical vapour deposition technique, plasma-assisted chemical vapour deposition method, ion beam sputterings earlier, form described cylinder 18 with methods such as chemical etchings again, and a reservation part is an insulating barrier 13; Cone point 19 forms by methods such as sputtering method, magnetron sputtering or ion beam sputtering deposition, and combines closely with cylinder 18.
Described fluorescence coating 15 comprises fluorescent material, produces visible light when electron bombard.
Described anode layer 16 can be made up of ITO (indium tin oxide) conductive film.
Described top layer 17 is hyaline layers, can be made by transparency glass plate.
Please consulting Fig. 3 together, is the enlarged diagram of a nanoelectronic emitter, and wherein, the diameter d 2 of cylinder 18 is in the 10-100 nanometer range; Cone point 19 bottoms are d2 than major diameter and cylinder 18 equal diameters, and the less diameter d 1 in top is in the 0.5-10 nanometer range; The whole height of nanoelectronic emitter (being cylinder 18 and cone point 19 total heights) h is in the 100-2000 nanometer range; The ratio of height to diameter h/d2 of nanoelectronic emitter is preferably 20-100 in the 10-200 scope.
During use, apply different voltages respectively with anode layer 16, thereby in the vacuum space, form electric field at conductive layer 11, under electric field action, the cone point 19 emitting electrons impact fluorescence layers 15 of nanoelectronic emitter and send visible light.Because nanoelectronic emitter and cylinder 18 are an integral body with insulating barrier 13, cone point 19 is combined closely with cylinder, so it can bear big electric field action power and not damage.Therefore, lighting source of the present invention can bear more highfield, and emission current improves, and can send more high intensity visible.
Seeing also Fig. 2, is lighting source 20 cut-away views of second embodiment of the invention.Its structure is similar to first embodiment with the preparation method.This lighting source 20 comprises a non metallic substrate (figure does not show), and for example silicon or glass are as substrate; One nucleating layer 21, conductive layer 22 are formed on this non-metal base basal surface respectively successively, and wherein nucleating layer 21 is made up of silicon materials, and conductive layer 22 is made up of conducting metal copper, silver or gold; One insulating barrier 23 is formed on this conductive layer 22 surfaces, and this insulating barrier 23 extends outward a plurality of cylinders 18, and described insulating barrier 23 and this cylinder 18 are formed by diamond-like-carbon; A plurality of cone points of being made up of niobium metal 19 are respectively formed at this cylinder 18 tops, in order to emitting electrons.Wherein, as shown in Figure 3, the diameter d 2 of cylinder 18 is in the 10-100 nanometer range; Cone point 19 bottoms are d2 than major diameter and cylinder 18 equal diameters, and the less diameter d 1 in top is in the 0.5-10 nanometer range; Its whole height (being cylinder 18 and cone point 19 total heights) h is in the 100-2000 nanometer range; Its ratio of height to diameter h/d2 is 10-200, is preferably 20-100.In addition, also comprise top layer 17, the cone point 19 spaced apart certain distances of itself and described nanoelectronic emitter, an anode layer 16 are formed on the surface of this top layer 17 near these cone points 19, and a fluorescence coating 15 is formed on the surface of this anode layer 16; In addition, a plurality of sidewalls 14 are with these lighting source 20 sealings and support described top layer 17, thereby form an inner vacuum space.
During use, apply different voltages, act on cone point 19, force its emitting electrons impact fluorescence layer 15 to send visible light thereby form highfield to conductive layer 22 and anode layer 16.This lighting source can bear the highfield effect and send high intensity visible, and is not subject to electric field action and damages transmitting terminal.

Claims (10)

1. field emission illuminating light source, it comprises: a conductive cathode; One anode layer, thereby itself and this conductive cathode inner space that forms a vacuum separated by a distance; One fluorescence coating is located at this anode layer surface, sends visible light when by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and near this conductive cathode; And a plurality of electron transmitting terminals, arrange and be formed on this surface of insulating layer; It is characterized in that: these a plurality of electron transmitting terminals comprise that respectively a cylinder and is formed on the cone point at cylinder top, and this cylinder is formed on the insulating barrier, with insulating barrier be an integral body; This cylinder and this insulating barrier are made up of diamond-like-carbon, and this cone point is made up of conducting metal.
2. field emission illuminating light source as claimed in claim 1 is characterized in that: this conducting metal comprises niobium metal.
3. field emission illuminating light source as claimed in claim 1 is characterized in that: this cylindrical diameter range is 10~100 nanometers.
4. field emission illuminating light source as claimed in claim 1 is characterized in that: this cone point top diameter scope is 0.5~10 nanometer.
5. field emission illuminating light source as claimed in claim 1 is characterized in that: the altitude range of this electron transmitting terminal is 100~2000 nanometers.
6. field emission illuminating light source as claimed in claim 1 is characterized in that: the ratio of height to diameter of this electron transmitting terminal is 10~200.
7. as each described field emission illuminating light source of claim 1 to 6, it is characterized in that: also comprise a nucleating layer between this insulating barrier and this conductive cathode, this nucleating layer is made up of silicon materials.
8. field emission illuminating light source, it comprises: a conductive cathode; One anode layer, thereby itself and this conductive cathode inner space that forms a vacuum separated by a distance; One fluorescence coating is arranged on this anode layer surface, sends visible light when by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and near this conductive cathode; And a plurality of cone points, arrange and be formed on this insulating barrier top, in order to emitting electrons; It is characterized in that: this insulating barrier is made up of the diamond like carbon material with carbon element, and this insulating barrier is extruded with a plurality of cylindrical protrusions towards this anode layer, and these a plurality of cylindrical protrusions and insulating barrier are an integral body; This cone point lays respectively at the top of described cylindrical protrusions.
9. field emission illuminating light source as claimed in claim 8 is characterized in that: comprise that further a plurality of sidewall sealings form described inner vacuum.
10. field emission illuminating light source as claimed in claim 8 is characterized in that: further comprise a transparency glass plate, described anode layer is located at the surface of this transparency glass plate.
CN200510032870A 2005-01-15 2005-01-15 Lighting source Expired - Fee Related CN100583384C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200510032870A CN100583384C (en) 2005-01-15 2005-01-15 Lighting source

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Application Number Priority Date Filing Date Title
CN200510032870A CN100583384C (en) 2005-01-15 2005-01-15 Lighting source

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CN1805112A CN1805112A (en) 2006-07-19
CN100583384C true CN100583384C (en) 2010-01-20

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1467775A (en) * 2002-07-12 2004-01-14 �踻�����ܹ�ҵ(����)���޹�˾ Field emission display device
CN1505091A (en) * 2002-12-02 2004-06-16 鸿富锦精密工业(深圳)有限公司 Field emission display unit having sealing arrangement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1467775A (en) * 2002-07-12 2004-01-14 �踻�����ܹ�ҵ(����)���޹�˾ Field emission display device
CN1505091A (en) * 2002-12-02 2004-06-16 鸿富锦精密工业(深圳)有限公司 Field emission display unit having sealing arrangement

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