TWI318815B - Multiwavelength semiconductor laser array and method of manufacturing the same - Google Patents

Multiwavelength semiconductor laser array and method of manufacturing the same

Info

Publication number
TWI318815B
TWI318815B TW095148051A TW95148051A TWI318815B TW I318815 B TWI318815 B TW I318815B TW 095148051 A TW095148051 A TW 095148051A TW 95148051 A TW95148051 A TW 95148051A TW I318815 B TWI318815 B TW I318815B
Authority
TW
Taiwan
Prior art keywords
manufacturing
same
semiconductor laser
laser array
multiwavelength semiconductor
Prior art date
Application number
TW095148051A
Other languages
English (en)
Other versions
TW200828707A (en
Inventor
Kuo Jui Lin
Tung Wei Chi
Kun Fong Lin
Chih Ming Lai
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW095148051A priority Critical patent/TWI318815B/zh
Priority to US11/803,583 priority patent/US7558301B2/en
Priority to JP2007135351A priority patent/JP2008160054A/ja
Publication of TW200828707A publication Critical patent/TW200828707A/zh
Application granted granted Critical
Publication of TWI318815B publication Critical patent/TWI318815B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
TW095148051A 2006-12-20 2006-12-20 Multiwavelength semiconductor laser array and method of manufacturing the same TWI318815B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095148051A TWI318815B (en) 2006-12-20 2006-12-20 Multiwavelength semiconductor laser array and method of manufacturing the same
US11/803,583 US7558301B2 (en) 2006-12-20 2007-05-15 Multiwavelength semiconductor laser array and method of fabricating the same
JP2007135351A JP2008160054A (ja) 2006-12-20 2007-05-22 多波長半導体レーザアレイ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095148051A TWI318815B (en) 2006-12-20 2006-12-20 Multiwavelength semiconductor laser array and method of manufacturing the same

Publications (2)

Publication Number Publication Date
TW200828707A TW200828707A (en) 2008-07-01
TWI318815B true TWI318815B (en) 2009-12-21

Family

ID=39542732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148051A TWI318815B (en) 2006-12-20 2006-12-20 Multiwavelength semiconductor laser array and method of manufacturing the same

Country Status (3)

Country Link
US (1) US7558301B2 (zh)
JP (1) JP2008160054A (zh)
TW (1) TWI318815B (zh)

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US8411711B2 (en) 2005-12-07 2013-04-02 Innolume Gmbh Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
TWI364892B (en) * 2007-01-10 2012-05-21 Ind Tech Res Inst Multiwavelength quantum dot laser device
US8059443B2 (en) * 2007-10-23 2011-11-15 Hewlett-Packard Development Company, L.P. Three-dimensional memory module architectures
US8064739B2 (en) * 2007-10-23 2011-11-22 Hewlett-Packard Development Company, L.P. Three-dimensional die stacks with inter-device and intra-device optical interconnect
US7532785B1 (en) * 2007-10-23 2009-05-12 Hewlett-Packard Development Company, L.P. Photonic interconnects for computer system devices
US20110313407A1 (en) * 2010-06-18 2011-12-22 Rafailov Edik U Quantum-dot laser diode
RU2582302C1 (ru) * 2015-03-25 2016-04-20 федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Полупроводниковый лазер на основе эпитаксиальной гетероструктуры
US11552454B1 (en) 2017-09-28 2023-01-10 Apple Inc. Integrated laser source
US11158996B2 (en) 2017-09-28 2021-10-26 Apple Inc. Laser architectures using quantum well intermixing techniques
CN111164393A (zh) 2017-09-29 2020-05-15 苹果公司 连接的外延光学感测系统
CN111164415A (zh) 2017-09-29 2020-05-15 苹果公司 路径解析的光学采样架构
EP3752873A1 (en) 2018-02-13 2020-12-23 Apple Inc. Integrated photonics device having integrated edge outcouplers
US10168537B1 (en) * 2018-03-16 2019-01-01 Facebook Technologies, Llc Single chip superluminous light emitting diode array for waveguide displays
US11644618B2 (en) 2018-06-22 2023-05-09 Apple Inc. Discrete optical unit on a substrate of an integrated photonics chip
CN109273566B (zh) * 2018-08-01 2020-05-05 太原理工大学 一种含有应变调制结构的多层InGaN量子点结构
US11525967B1 (en) 2018-09-28 2022-12-13 Apple Inc. Photonics integrated circuit architecture
US11171464B1 (en) 2018-12-14 2021-11-09 Apple Inc. Laser integration techniques
US11231319B1 (en) 2019-09-09 2022-01-25 Apple Inc. Athermal wavelength stability monitor using a detraction grating
US11525958B1 (en) 2019-09-09 2022-12-13 Apple Inc. Off-cut wafer with a supported outcoupler
US11835836B1 (en) 2019-09-09 2023-12-05 Apple Inc. Mach-Zehnder interferometer device for wavelength locking
US11506535B1 (en) 2019-09-09 2022-11-22 Apple Inc. Diffraction grating design
US11881678B1 (en) 2019-09-09 2024-01-23 Apple Inc. Photonics assembly with a photonics die stack
US11320718B1 (en) 2019-09-26 2022-05-03 Apple Inc. Cantilever beam waveguide for silicon photonics device
US11500154B1 (en) 2019-10-18 2022-11-15 Apple Inc. Asymmetric optical power splitting system and method
JP2021118308A (ja) * 2020-01-28 2021-08-10 パナソニックＩｐマネジメント株式会社 レーザーダイオードバー及び波長ビーム結合システム
US11852318B2 (en) 2020-09-09 2023-12-26 Apple Inc. Optical system for noise mitigation
CN112072470B (zh) * 2020-09-14 2022-09-13 中国科学院半导体研究所 多波长激光器阵列及其制作方法
US11852865B2 (en) 2020-09-24 2023-12-26 Apple Inc. Optical system with phase shifting elements
US11561346B2 (en) 2020-09-24 2023-01-24 Apple Inc. Tunable echelle grating
US11906778B2 (en) 2020-09-25 2024-02-20 Apple Inc. Achromatic light splitting device with a high V number and a low V number waveguide
US11815719B2 (en) 2020-09-25 2023-11-14 Apple Inc. Wavelength agile multiplexing
JP2022078795A (ja) * 2020-11-13 2022-05-25 株式会社デンソー 半導体レーザ装置
CN118117440A (zh) * 2024-04-22 2024-05-31 苏州矩阵光电有限公司 一种激光器结构及多波长激光器阵列

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Also Published As

Publication number Publication date
US20080151950A1 (en) 2008-06-26
TW200828707A (en) 2008-07-01
JP2008160054A (ja) 2008-07-10
US7558301B2 (en) 2009-07-07

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MM4A Annulment or lapse of patent due to non-payment of fees