TWI318436B - Method of manufacturing nano-crystalline silicon dot layer - Google Patents

Method of manufacturing nano-crystalline silicon dot layer

Info

Publication number
TWI318436B
TWI318436B TW95129180A TW95129180A TWI318436B TW I318436 B TWI318436 B TW I318436B TW 95129180 A TW95129180 A TW 95129180A TW 95129180 A TW95129180 A TW 95129180A TW I318436 B TWI318436 B TW I318436B
Authority
TW
Taiwan
Prior art keywords
crystalline silicon
dot layer
silicon dot
manufacturing nano
nano
Prior art date
Application number
TW95129180A
Other languages
Chinese (zh)
Other versions
TW200810024A (en
Inventor
Chi-Pin Lu
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW95129180A priority Critical patent/TWI318436B/en
Publication of TW200810024A publication Critical patent/TW200810024A/en
Application granted granted Critical
Publication of TWI318436B publication Critical patent/TWI318436B/en

Links

TW95129180A 2006-08-09 2006-08-09 Method of manufacturing nano-crystalline silicon dot layer TWI318436B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95129180A TWI318436B (en) 2006-08-09 2006-08-09 Method of manufacturing nano-crystalline silicon dot layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95129180A TWI318436B (en) 2006-08-09 2006-08-09 Method of manufacturing nano-crystalline silicon dot layer

Publications (2)

Publication Number Publication Date
TW200810024A TW200810024A (en) 2008-02-16
TWI318436B true TWI318436B (en) 2009-12-11

Family

ID=44767283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95129180A TWI318436B (en) 2006-08-09 2006-08-09 Method of manufacturing nano-crystalline silicon dot layer

Country Status (1)

Country Link
TW (1) TWI318436B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104517903B (en) * 2013-09-27 2017-07-14 台湾积体电路制造股份有限公司 memory device and forming method thereof
US9978603B2 (en) 2013-09-27 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same
US10665600B2 (en) 2013-12-03 2020-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104517903B (en) * 2013-09-27 2017-07-14 台湾积体电路制造股份有限公司 memory device and forming method thereof
US9978603B2 (en) 2013-09-27 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same
US9978759B2 (en) 2013-09-27 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of forming same
US10665600B2 (en) 2013-12-03 2020-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same
US11348935B2 (en) 2013-12-03 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same

Also Published As

Publication number Publication date
TW200810024A (en) 2008-02-16

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