TWI317970B - Semiconductor processing method and apparatus for processing target substrate - Google Patents

Semiconductor processing method and apparatus for processing target substrate

Info

Publication number
TWI317970B
TWI317970B TW093102652A TW93102652A TWI317970B TW I317970 B TWI317970 B TW I317970B TW 093102652 A TW093102652 A TW 093102652A TW 93102652 A TW93102652 A TW 93102652A TW I317970 B TWI317970 B TW I317970B
Authority
TW
Taiwan
Prior art keywords
target substrate
processing method
processing target
semiconductor
semiconductor processing
Prior art date
Application number
TW093102652A
Other languages
English (en)
Other versions
TW200416841A (en
Inventor
Haruhiko Furuya
Yuichiro Morozumi
Hiroaki Ikegawa
Makoto Hirayama
Yuichi Ito
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200416841A publication Critical patent/TW200416841A/zh
Application granted granted Critical
Publication of TWI317970B publication Critical patent/TWI317970B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW093102652A 2003-02-07 2004-02-05 Semiconductor processing method and apparatus for processing target substrate TWI317970B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003031504 2003-02-07

Publications (2)

Publication Number Publication Date
TW200416841A TW200416841A (en) 2004-09-01
TWI317970B true TWI317970B (en) 2009-12-01

Family

ID=32844302

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102652A TWI317970B (en) 2003-02-07 2004-02-05 Semiconductor processing method and apparatus for processing target substrate

Country Status (7)

Country Link
US (1) US20050272271A1 (zh)
EP (1) EP1605075A1 (zh)
JP (1) JP4500258B2 (zh)
KR (1) KR100771799B1 (zh)
CN (1) CN100402696C (zh)
TW (1) TWI317970B (zh)
WO (1) WO2004070079A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI783318B (zh) * 2019-12-09 2022-11-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及程式

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP5157100B2 (ja) 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
JP4438850B2 (ja) * 2006-10-19 2010-03-24 東京エレクトロン株式会社 処理装置、このクリーニング方法及び記憶媒体
JP5036849B2 (ja) 2009-08-27 2012-09-26 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
CN102485935B (zh) * 2010-12-06 2013-11-13 北京北方微电子基地设备工艺研究中心有限责任公司 均热板及应用该均热板的基片处理设备
JP6087236B2 (ja) * 2013-07-24 2017-03-01 東京エレクトロン株式会社 成膜方法
JP7149890B2 (ja) * 2019-03-28 2022-10-07 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20230035619A (ko) 2020-09-16 2023-03-14 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 프로그램, 기판 처리 장치 및 기판 처리 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119475B2 (ja) * 1989-04-10 2000-12-18 日本電気株式会社 半導体装置の製造方法
JPH07111244A (ja) 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
JP3590416B2 (ja) * 1993-11-29 2004-11-17 アネルバ株式会社 薄膜形成方法および薄膜形成装置
JPH11195711A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
JP3796030B2 (ja) 1997-11-16 2006-07-12 キヤノンアネルバ株式会社 薄膜作成装置
US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
JP2001156065A (ja) * 1999-11-24 2001-06-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP3421660B2 (ja) * 2001-05-09 2003-06-30 東京エレクトロン株式会社 熱処理装置及びその方法
US7164165B2 (en) * 2002-05-16 2007-01-16 Micron Technology, Inc. MIS capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI783318B (zh) * 2019-12-09 2022-11-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及程式

Also Published As

Publication number Publication date
KR100771799B1 (ko) 2007-10-30
TW200416841A (en) 2004-09-01
CN100402696C (zh) 2008-07-16
US20050272271A1 (en) 2005-12-08
KR20050094345A (ko) 2005-09-27
CN1701133A (zh) 2005-11-23
WO2004070079A1 (ja) 2004-08-19
JP4500258B2 (ja) 2010-07-14
JPWO2004070079A1 (ja) 2006-05-25
EP1605075A1 (en) 2005-12-14

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees