TWI317181B - - Google Patents
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- Publication number
- TWI317181B TWI317181B TW95116643A TW95116643A TWI317181B TW I317181 B TWI317181 B TW I317181B TW 95116643 A TW95116643 A TW 95116643A TW 95116643 A TW95116643 A TW 95116643A TW I317181 B TWI317181 B TW I317181B
- Authority
- TW
- Taiwan
- Prior art keywords
- anode
- transport layer
- oled
- substrate
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005525 hole transport Effects 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095116643A TW200743236A (en) | 2006-05-11 | 2006-05-11 | Structure for improving injection efficiency of organic light-emitting diode (OLED) by indium tin oxide (ITO) anode containing nickel and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095116643A TW200743236A (en) | 2006-05-11 | 2006-05-11 | Structure for improving injection efficiency of organic light-emitting diode (OLED) by indium tin oxide (ITO) anode containing nickel and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200743236A TW200743236A (en) | 2007-11-16 |
| TWI317181B true TWI317181B (enExample) | 2009-11-11 |
Family
ID=45073329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095116643A TW200743236A (en) | 2006-05-11 | 2006-05-11 | Structure for improving injection efficiency of organic light-emitting diode (OLED) by indium tin oxide (ITO) anode containing nickel and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200743236A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009188A (zh) * | 2014-05-13 | 2014-08-27 | 清华大学 | 一种提高ito透明导电薄膜空穴注入能力的方法及其应用 |
-
2006
- 2006-05-11 TW TW095116643A patent/TW200743236A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009188A (zh) * | 2014-05-13 | 2014-08-27 | 清华大学 | 一种提高ito透明导电薄膜空穴注入能力的方法及其应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200743236A (en) | 2007-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |