TWI316730B - Method and apparatus for drying a wafer - Google Patents

Description

1316730 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method and apparatus for drying a wafer, and more particularly to an isopropyl group by controlling a Marangoni Dryer (Marangoni Dryer) Alcohol solution tank (Isopropyl Alcohol Bottle; IPA,

The method of "temperature" of the bottle's to obtain a predetermined concentration of isopropanol vapor. [Prior Art] Since the cleanliness of wafers is critical to the success of semiconductor manufacturing, crystal is a very important part of the semiconductor manufacturing process. The wafer cleaning step must be performed before and after each of the conductor processes, by 曰 = particles and chemical residues on the wafer. After rinsing, it is necessary to make the 2 = device to thoroughly drive off the water on the wafer, especially

BiinH. Qu and metal layers are prone to electrical interruptions (Electrical two more greatly reduce the yield). In addition, the residual surface of the wafer causes the rounding of the wafer to cause considerable defects in the subsequent process. Influence, thus the large-scale scrapping of the war day (Scrap ^ mouth and dry 裴 ^ 0 曰 ^ drying device is usually the use of isopropyl alcohol vapor Marangoni f device; to: Erlang first" Malangoni's with isopropyl hydrazine, ί: The Gurney drying device is in the treatment tank 2,, steaming and smashing (nitrogen is a transport gas) blowing to the self-deionized water surface I Small, ΪίΪΐΪΐ water concentration. Due to the surface of the wafer, the roundness is dehydrated by the water molecules on the surface being sucked back to the surface.

Page 6 1316730 V. INSTRUCTIONS (2) This is a dry-loading of Malangoni with nitrogen and antimony. When the output of the conventional Ma Langge will take away the increase in the amount of heat and the decrease in the device operation is about 8.5 points. The eC drops to about 14.5. (: The temperature of the alcohol vapor will also decrease with the temperature of the isopropanol gas. The conventional operation time of the Malangoni dry process is increased to effectively dry the wafer, and the subsequent process produces a phase that causes the bulk of the wafer. The drying method and the device set the temperature so that the isopropyl alcohol effectively drys the wafer and the layer, thereby improving the yield of the alcohol storage. Therefore, such as the second moxibustion, the same, that is, the same vapor of isopropyl The alcohol drying device is gradually lowered to cause a large amount of scrapping of the crystal. The steaming device is formed by, in particular, 'avoiding the drying of β, the isopropanol evaporating and adding a nitrogen tank 10. Please refer to Fig. 2, Fig. 2 In order to illustrate the temperature change of the conventional isopropanol storage tank, the temperature of the isopropanol vapor and isopropanol liquid storage tank is as shown in the operation diagram, as is known as the Malangoni dry propanol solution. The temperature of the storage tank will decrease from the level of isopropanol produced in the storage tank of about 18.7 isopropyl alcohol. As the temperature of the isopropanol vapor increases, the concentration of the isopropanol vapor is also reduced. The concentration of isopropanol vapor will decrease with the production, while the low concentration of isopropanol vapor will not leave too much water on the round surface, thus adversely affecting 'and thus greatly reducing the yield. Therefore, it is very necessary to develop a crystal. The temperature of the isopropyl alcohol solution storage tank is controlled to a predetermined concentration (ie, the optimum concentration), and the etched via window and the etched metal wafer are largely scrapped. [The present invention] Providing a method and apparatus for drying a wafer by controlling the temperature of an isopropanol storage tank of a wafer drying apparatus

Page 7 1316730 ------._ V. INSTRUCTIONS (3) The alcohol vapor has a pre-intermediate window and a large-scale scrap. Dry wafers in accordance with the present invention. In accordance with the present invention, a controlled drying of the wafer is carried out to transport the gas alcohol vapor; and the moisture. In addition, according to the present invention, the drying tank according to the present invention is used, wherein the isopropanol is placed in the isopropyl alcohol solution of the wafer, and the surface of the wafer is effectively applied. Dry waste'. In particular, cocoa effectively prevents the concentration of the [Embodiment] set, so that the metal crystallization 1 'in particular (4) after the last name is increased, thereby increasing the yield and avoiding the crystal < Method, by way of a preferred embodiment, & wafer drying method comprises at least: setting the temperature of the isopropanol liquid storage tank to a preset temperature; p-propanol (four)' to produce isopropyl isopropoxide having a pre-four degree The alcohol vapor is blown onto the wafer to remove the wafer described above on the surface of the wafer. The preferred embodiment of the wafer system is to control the temperature of the device for storing the liquid storage tank to generate moisture, thereby inventing the wafer, and thus the wafer to be electrically interrupted. The dry package 'This wafer is dried in the treatment tank and has isopropyl alcohol. The characteristics are: Pre-set temperature at a preset temperature to obtain a clean isopropyl alcohol vapor, and the interlayer window and phenomenon occur. Drying device to: isopropyl alcohol liquid; and temperature control, and pass the isopropyl alcohol vapor 曰 round to avoid the occurrence of crystal metal layer cleaning less include: storage tank, degree control device will lose Gas is used to remove the concentration, so the round is reported to be clean, so 1 drying

Page 8 B16730

V. DESCRIPTION OF THE INVENTION (4) As in the prior art described above, the temperature of the isopropanol liquid storage tank (i.e., the temperature of the isopropanol vapor and the isopropanol liquid) is related to the concentration of the isopropanol vapor, The concentration of isopropyl alcohol vapor determines whether the wafer can be completely dried and cleaned. Whether the wafer is completely clean or not affects the success or failure of the entire wafer fabrication. However, there is no control over the temperature of the isopropyl alcohol storage tank, that is, the temperature of the isopropyl alcohol storage tank naturally decreases with the increase of the operation. Therefore, the longer the operation of the Malangoni drying unit, the lower the concentration of isopropyl alcohol vapor produced, and the less effective the isopropyl alcohol vapor drying wafer is, so that the wafer cannot be completely cleaned. Therefore, the main feature of the method and apparatus for drying a wafer of the present invention is that the temperature of the isopropyl alcohol storage tank is controlled to a preset temperature, so that the temperature of the isopropyl alcohol storage tank is not lowered. At the same time, the temperature of the isopropanol solution storage tank can be raised to provide a higher concentration of isopropanol vapor. Referring to Fig. 3, Fig. 3 is a flow chart showing the method of wafer drying of the present invention. First, step 1 is performed to control the temperature of the isopropanol liquid storage tank in the wafer drying device at a preset temperature, wherein the isopropanol liquid storage tank stores the isopropanol liquid, and the preset temperature It can be, for example, between about 15. (: to about 35. (:: In a preferred embodiment of the present invention, the preset temperature is, for example, about 24. (:, plus the control deviation of the temperature control element is, for example, ± 1 °c, The temperature of the isopropanol solution storage tank is between about 23. (: to about 25 ° C. When the temperature of the isopropanol liquid storage tank is controlled to a preset temperature, step 110 is performed to pass the transport gas. The isopropanol vapor is generated in an isopropanol liquid, wherein the transfer gas may be, for example, nitrogen. At this time, since the temperature of the isopropanol liquid storage tank is maintained at a preset temperature, the isopropanol vapor may have a preheating Set the concentration (ie the best concentration)

Page 9 1316730 ____ V. Description of invention (5) Degree). After the isopropyl alcohol vapor is generated, the step 1 20 ' is performed to blow the isopropyl alcohol vapor onto the wafer to remove moisture on the surface of the wafer. Please refer to Fig. 4, which is a schematic view showing the change of the isopropanol vapor concentration using the method of wafer drying of the present invention. When the temperature of the isopropanol solution storage tank is maintained at about 24 ° C, the preset concentration of the isopropanol vapor (i.e., the optimum concentration) is between about 1 300 00 ppm and about 1 400 〇 PPm. However, the temperatures and concentrations described above are merely illustrative and the invention is not limited thereto. The predetermined concentration of isopropyl alcohol vapor may also be, for example, between about 1 〇〇〇〇 ppm and about 20,000 ppm.

In addition, in order to ensure the safety of the operation, for example, the instantaneous temperature of the isopropanol liquid storage tank is too high, and the instantaneous concentration of the isopropanol vapor is excessively large to cause an explosion, and the temperature of the isopropanol liquid storage tank of the present invention is controlled. The method is a water bath (heated by water).

Referring to Figure 5, Figure 5 is a schematic view showing the structure of the apparatus for wafer drying of the present invention. The wafer drying apparatus of the present invention comprises at least a treatment tank 20, an isopropanol liquid storage tank 1 in which an isopropanol liquid storage tank stores an isopropanol liquid, and a temperature control unit 30. The wafer drying apparatus of the present invention controls the temperature of the isopropanol liquid storage tank 1〇 to a preset temperature by the temperature control device 30, and passes the transport gas into the isopropanol liquid of the isopropanol liquid storage tank 1〇. To produce isopropyl alcohol vapor with a preset concentration (ie, optimal concentration), and then use this isopropyl alcohol vapor to remove moisture from the surface of the wafer to obtain a clean crystal. As described above, based on safety considerations, the temperature control device 3 is controlled by water cooling and water heating to control the temperature of the isopropyl alcohol storage tank 1 at a preset temperature. The so-called water bath method is to first store the isopropyl alcohol solution tank 1

J316730

V. Description of the invention (6) In the I / ruler slot 3 2, an appropriate amount of water is stored in the water tank 3 2; then the temperature of the water in the water tank 32 is controlled to a certain temperature by the temperature control element, by the water temperature Control the temperature of the isopropyl alcohol storage tank. The temperature control element 34 can be heated by a heater (not shown) such as water in the water tank 32, and a temperature controller (not shown) that controls the heating off. When the temperature of the isopropanol liquid storage tank is set to "the lower limit of the temperature control, the temperature controller starts the heating j = raises the temperature of the heater to raise the temperature of the propanol solution storage tank. The temperature of the alcohol storage tank is greater than the upper limit of control β of the preset temperature, and the temperature controller turns off the heater to avoid further lifting of the isopropanol;:: the temperature β of the tank 10 is more than the description of the temperature control element 34 The invention is not limited to this. Other various temperature controls are also applicable to the present invention, and those temperature control elements are well known to those skilled in the art and will not be described again. The method and apparatus for wafer drying of the present invention are particularly suitable for the via layer (1) 3) and the metal layer after the button is engraved. When the temperature of the isopropanol liquid H tank is controlled to about 2 generations (ie, the concentration of isopropanol vapor is between about 0 ppm and about i4 〇〇〇 ppm) for wafer drying, the pair has one or one layer. For the metal layer wafer product, the yield can be increased by about 2%. For a wafer product having 5 to 7 vias, the yield can be increased by at least about 5% to about 7%. ^ The preferred embodiment of the invention shows that the advantage of using the wafer drying device of the present invention is : isopropyl alcohol vapor has a higher concentration, and j effect, dry the wafer; the (4) after the interlayer window and the metal layer can be cleaned, and effectively prevent the occurrence of electrical interruption; thus improving the good Rate, 1316730 V. Description of invention (7) Avoid wafer bulk scrapping. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

Page 12 1316730_ Brief description of the drawing [Simple description of the drawing] Fig. 1 is a schematic view showing the structure of a conventional Malangoni drying device. Fig. 2 is a schematic view showing the temperature change of the isopropanol storage tank in the conventional Malangoni drying apparatus. FIG. 3 is a schematic flow chart showing a method of drying a wafer of the present invention. Fig. 4 is a graph showing the change in the concentration of isopropanol vapor using the method of wafer drying of the present invention. Figure 5 is a schematic view showing the structure of the apparatus for drying a wafer of the present invention. [Simplified description of component symbol] 10 Isopropyl alcohol storage tank 20 Treatment tank 30 Temperature control device 32 Sink 34 Temperature control element 100: Control the temperature of the isopropyl alcohol storage tank in the wafer drying device at a preset temperature of 110: pass Transfer the gas into the isopropanol solution to produce isopropanol vapor 120: blow the isopropanol vapor to the wafer

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Claims (1)

| 316730 MM 92H?.nAR VI. Patent Scope Correction 1. A method of wafer drying 'by drying a wafer, wherein the method of drying the wafer includes at least: controlling one of the isopropanol in a wafer drying apparatus The temperature of the liquid storage tank (Is〇pr〇py 1 ^lcohol Bottle; IPA B〇ttle) is maintained at a preset temperature, wherein the isopropanol liquid storage tank is stored in an isopropanol liquid, the preset The temperature is substantially between 1% and 35 ° C; a pass gas is introduced into the isopropanol liquid to produce a monopropanol vapor having a predetermined concentration; and the isopropanol vapor Blowing the wafer to remove moisture from the surface of the wafer. 2. The method of wafer drying according to claim 1, wherein the wafer drying apparatus is a Marang〇ni Dryer. 3. As described in claim 1 The method for drying a wafer, wherein the wafer drying device comprises at least: a temperature control device for controlling a temperature of the isopropyl alcohol storage tank at the preset temperature. 4. The method of wafer drying according to claim 3, wherein the temperature control device controls the isopropyl alcohol solution in the isopropyl alcohol storage tank by means of a water bath (heated by water). The temperature is at the preset temperature. Ϊ316730 \一·^- --恚^ 92112048 Amendment of the date of the month, apply for the patent Fanyuan' 5. The method of wafer drying as described in Item 1 of the § 青 patent scope, the preset temperature is substantially 2 Buckle between 25〇c. 6. The method of wafer drying according to item 1 of the patent scope, wherein the predetermined concentration is substantially between 100 ppm and 200,000 ppm. The method of wafer drying as described in item 6 of the US Patent Specification, the preset concentration is substantially between 1 300 00 ppm and 1 400 0 ppm. ', 1 敦 8. As in the method of wafer drying described in claim 1, the transport gas is nitrogen. Danzhong Read 9. A wafer drying device for drying a wafer, wherein the dry drying device comprises: a processing tank, wherein the wafer is placed in a read: round dry; 〆 isopropanol liquid storage tank Wherein the isopropanol liquid storage tank is provided with a buffered isopropanol liquid; and a temperature control device wherein the temperature control H^ is performed by means of a water bath (heated by water); the wafer drying apparatus is characterized in that The temperature control device controls and maintains the temperature of the isopropanol liquid storage tank at a pre-existing temperature, and introduces a transport gas into the isopropanol liquid to generate a different concentration with a predetermined concentration. A propanol vapor is used to remove moisture from the surface of the wafer to obtain a clean wafer. 1 〇 , the device for drying a wafer according to claim 9 of the patent application, wherein Page 15 1316730 Case No. 92112048 Month 傪 傪 六 VI. Patent Application Range The preset temperature is between 15 °C and 35 °C. 1 1. The apparatus for wafer drying according to claim 10, wherein the preset temperature is substantially between 23 ° C and 25 ° C. The device for wafer drying according to claim 9, wherein the predetermined concentration is substantially between 1000 ppm and 2,0 ppm. The device for wafer drying according to claim 12, wherein the predetermined concentration is substantially between 13,000 and 1400 ppm. The device for wafer drying according to claim 9, wherein the transport gas is nitrogen. I II il i第16页