1313905 九、發明說明： 【發明所屬之技術領域】 本發明有關一種射頻測s式鍵結構，特別是_ ___種可設置 於切割道中的射頻測試鍵結構。 【先前技術】 在通信系統高度發展的現代化資訊社會之中，無線電 通訊已被廣泛運用於人與人之間的日常生活溝通上，人們 能藉由方便的無線電裝置隨時隨地進㈣訊交換、㈣分 享與意見溝通。1313905 IX. Description of the Invention: [Technical Field] The present invention relates to a radio frequency measurement s-type key structure, in particular, an RF test key structure that can be disposed in a scribe line. [Prior Art] In the modern information society with a highly developed communication system, radio communication has been widely used in daily life communication between people. People can use any convenient radio device to exchange information at any time and place. (4) Sharing and communication.
U無線電被廣泛地運m各制無線電產品不 斷地推陳出新。在無線電設備的製程中，為維持產品品質 的穩定，因此必須針對所生產之射頻元件㈣^叫腦^ device)持續進行線上測試.。1仫 你於晶圓之切割道或於一監 控片（monitor wafer)表面製作族金 卞後數個測試鍵(test key)結 構，亦即在進行晶粒上射頻开 貝7^件之各項半導體製程的同 時，便採用相同的步驟於晶_七丄 曰曰圓之切割道或於監控片表面製 作一測試用兀件，來模擬晶板 上之相同製程。然後再利用 探針(probe)等測試裝置接觸測 啊州忒鍵，量測測試元件的各項 參數，以測試結果作為檢视淘 ^ θ _ 衣缸疋否正常之指標並監控各 製程步m缺陷’⑼有致控制產品品質。 1313905 • 請參考第i圖，第ί圖為一傳統射頻測試鍵之示意圖。 . 如第1圖所示’射頻測試鍵10包含有一基底12、一底部 金屬層與一頂部金屬層。基底12上包含有—待測元件 (device under test，DUT) 18 ’例如一金屬氧化半導體 (metal-oxide semiconductor ’ MOS)電晶體。待測元件 18 具 有四個連接端，依圖中前、右、後、左之順序分別為間極 連接端182、源極連接端184、汲極連接端186與基底連接 肇端188，並分別電連接至待測元件18之閘才亟、源極、汲極 與基底。底部金屬層由一前區塊142、—右區塊144、一後 區塊146與一左區塊148所構成。前區塊142、右區塊144、 後區塊146與左區塊148環繞於待測元件18四周，並分別 接攘於對應之閘極連接端182、源極連接端184、没極連接 端186與基底連接端188。其中，前區塊M2與後區塊146 上分別定義有一前訊號墊14a與一後訊號墊14b，用來與 ♦探針電連接。 頂部金屬層位於底部金屬層上方，且頂部金屬層與底 部金屬層之間另設有一介電層（圖未示）。頂部金屬層包含 有右金屬片164與左金屬片168’分別利用導電插塞(via Plug)穿過介電層（圖未示）以分別電連接至底部金屬層之右 區塊144與左區塊148。右金屬片164與左金屬片168各 為一狹長之金屬片，平行於一第一方向1。在右金屬片164 « 之前後二端各定義有一接地墊164a與一接地塾164b，在 8 1313905 左金屬片168之前後二端各定義有一接地墊1683與—接地 , 塾168b ’使得接地墊168a、前訊號墊i4a與接地塾I64a 垂直於第一方向1而排列成一前排連接區域，並使得接地 墊168b、後訊號墊14b與接地墊164b垂直於第一方向j 而排列成一後排連接區域。如此一來，探針卡之探針就可 分別接觸於射頻測試鍵10之前排連接區域與後排連接區 域，進行待測元件18之測試。 然而’由於傳統射頻測試鍵10的結構設計所佔之寬幅 過大，無法設置於切割道中，而增加製程與測試之困難， 因此習知技術衍生出一種位於切割道之射頻測試鍵。請參 考第2圖’第2圖為一習知射頻測試鍵之示意圖。如第2 圖所示’射頻測試鍵20包含有一基灰22、至少四條金屬 連線242、244、246、248與六個矩形金屬塾261、262、 φ 263、264、265、266。基底22上包含有一待測元件28， 待測元件28之四邊分別具有一閘極連接端282、一源極連 接端284、一汲極連接端286與一基底連接端288，並分別 電連接至待測元件28之閘極、源極、汲極與基底。其中， 金屬連線242、244、24_6、248與矩形金屬墊261、262、 263、264、265、266是利用多重金屬内連線製程製備，且 六個矩形金屬墊261、262、263、264、265、266係呈單行 排列而平行設置於一切割道區域30内，由左至右依序為接 地墊261、訊號塾262、接地藝263、接地墊264、訊號势 1313905 265與接地墊266，用來與探針電連接。金屬連線242用來 • 電連接訊號墊262與閘極連接端282、金屬連線244用來 電連接接地墊266與源極連接端284、金屬連線246用來 電連接訊號墊265與汲極連接端286，而金屬連線248則 是用來電連接接地墊261與基底連接端288。 習知射頻測試鍵20係利用細長之金屬連線進行電性連 響接，由於導體之電阻係與戴面積成反比，因此細長之金屬 連線會明顯地增加射頻測試鍵20的内部電阻，使得射頻測 試鍵20的測試結果與實際射頻元件的測試結果差異過 大。如此一來，即使習知射頻測試鍵20可設置於切割道區 域30中，但卻無法正確地模擬出射頻元件的電子特性，失 去射頻測試鍵20的準確性。 p 【發明内容】 據此，本發明之主要目的在於提供一種射頻測試鍵結 構，以解決習知技術無法克服之難題，進而提升射頻測試 鍵結構的準確性。 根據本發明之申請專利範圍，本發明係提供一種位於 切割道區域之射頻測試鍵結構，包含有一基底、一待測元 ' 件與至少二金屬層。基底上定義有至少一切割道區域。待 • 測元件位於基底上之切割道區域内，包含有至少二訊號連 10 1313905 接端與至少二接地連接端。金屬層位於切割道區域内，包 ' 含有一底部金屬層位於基底上方，與一頂部金屬層位於底 - .· · 部金屬層上方。頂部金屬層係為成片的金屬墊，其上定義有 至少二訊號墊區域與至少二接地墊區域，訊號墊區域電連 接至待測元件之訊號連接端，接地墊區域電連接至待測元 件之接地連接端。訊號墊區域與接地墊區域係呈單行排列 而平行於切割道區域，且頂部金屬層包含有一絕緣開口位 籲於前述二訊號墊區域與前述二接地墊區域之間以及前述二 • · . ' . 訊號墊區域彼此之間，使前述二訊號墊區域與前述二接地 墊區域分隔，並使前述二訊號墊區域彼此分隔。 由於本發明射頻測試鍵結構之訊號墊區域與接地墊區 域係呈單行排列，因此可設置於切割道區域中。此外，射 頻測試鍵結構之底部金屬層與頂部金屬層都具有大面積之 •接地金屬區域，因此可形成一電磁屏蔽，保護射頻測試鍵 結構不受外部電磁干擾，進而提升射頻測試鍵結構的準確 性。 為了使貴審查委員能更近一步了解本杳明之特徵及 技術内容，請參閱以下有關本發明之詳細說明與附圖。然 而所附圖式僅供參考與輔助說明用，並非用來對本發明加 以限制者。 1313905 【實施方式】 «丨 請參考第3圖與第4圖’第3圖為本發明第一較佳實 施例射頻測試鍵結構之各層組件之電路佈局的示意圖，而 第4圖為第3圖所示之射頻測試鍵結構之俯視示意圖。如 第3圖與第4圖所示，射頻測試鍵結構50由下而上包含有 一基底52、一底部金屬層54、至少一内部金屬層56與一 頂部金屬層58。基底52可以為部分的晶圓、石夕覆絕緣層 籲（silicon-on-insulator，SOI)或應變石夕（strained silicon)等包含 有多晶石夕、摻雜多晶石夕等材質之半導體基底。而且，基底 52上定義有複數個晶粒區域522與至少一切割道區域524 位於晶粒區域522之間。基底52之切割道區域524具有一 狹長測試區域526，作為射頻測試鍵結構50之預定位置。 基底52之狹長測試區域526上可包含有一待測元件 _ 62 ’在本第一較佳實施例中，待測元件62為一射頻元件， 例如一 M0S電晶體或是一 MOS電晶體之等效電路。待測 元件62之四邊具有四個連接端，依圖中前、右、後、左之 順序分別為接地連接端622、訊號連接端624、接地連接端 626與訊號連接端628，並分別電連接至待測元件62之源 極、汲極、基底52與閘極。 • . - 底部金屬層54位於基底52上方之狹長測試區域526 内’本質上係為一狹長之矩形金屬片，且可電連接至—接 1313905 -地點（圖未示）。底部金屬層54具有一容置開口⑽，用以 -暴露出待測元件62之訊號連接維624與訊號連接端似， 且底。P金屬@ 54更與待測元件62之接地連接端⑵、接 地連接端626相接觸，藉以電連接至待測元件⑺之源極與 基底52。 u金屬層58係為成片的金屬塾’位於狹長測試區域 • 526内之底部金屬層54上，本質上為一狹長之矩形金屬 片。在本第一較佳實施例令，頂部金屬層58上定義有二個 訊號塾區域與四個接地塾區域，呈單行排列而平行於狹長 測試區域526，由左至右依序為接地墊區域％卜訊號墊區 域582、接地墊區域583、接地墊區域584、訊號墊區域585 與接地墊區域586(G-S-G-G-S-G)，用來與測試之探針電連 接。根據相對位置做區分，接地墊區域581與接地墊區域 ❿586為邊緣接地墊區域，而槔地墊區域583與接地墊區域 584為中央接地墊區域。此外，本第一較佳實施雖以八角 形之訊號塾區域582、585與接地墊區域581、583、584、 586為例進行圖示說明，但並不以此為限制，訊號墊區域 582、585與接地塾區域581、583、584、586之形狀可為 矩形、六角形、八角形或圓形等任意之幾何形狀，尤以愈 接近圓形之訊號墊區域與接地墊區域具有愈好的電性效 果’其皆應屬本發明之涵蓋範圍。 1313905 . 頂部金屬層58包含有至少一絕緣開口，位於訊號墊區 •域582、585與接地塾區域58!、. 583、584、586之間以及 訊號墊區域582、585彼此之間，.使訊號墊區域582、585 與接地塾區域58卜583、584、586分隔，並使訊號墊區域 582、585彼此分隔。例如此處頂部金屬層58包含有一第 一絕緣開口 642，第一絕緣開口 642環繞於訊號墊區域 582、585與接地墊區域583、584周圍，並且通過接地墊 馨區域583、584之間。因此，第一絕緣開口 642可於頂部金 屬層58内電性分離接地墊區域581與訊號墊區域582、電 性分離接地墊區域581與訊號塾區域585、電性分離接地 墊區域586與訊號墊區域582、並且電性分離接地墊區域 586與訊號墊區域585。如圖所示，第一絕緣開口 642可使 頂部金屬層58之邊緣區域構成一框形結構588，接地墊區 域581與接地墊區域586可透過框形結構588而彼此電連 _接，並使得頂部金屬層588鄰接於待測元件62的部分係呈 現由邊緣至待測元件62漸縮狀。除了第一絕緣開口 642， 頂部金屬層5 8另包含有一第二絕緣開口 644與一第三絕緣 開口 646。第二絕緣開口 644環繞於接地墊區域583周圍， 用以於頂部金屬層58内電性分離接地墊區域583與訊號墊 區域582。第三絕緣開口 646環繞於接地墊區域584周圍， •用以於頂部金屬層58内電性分離.接地墊區域584與訊號墊 區域585。 1313905 • 如此一來，訊號墊區域582與訊號墊區域585便可透 '過大面積之頂部金屬層58而分別電逹接至待挪元件62之 。凡號連接端624與訊號連接端628，而不會與接地墊區域 Ml、583、584、586電性接觸，更不會因為複雜而狹窄的 連接線路而使射頻測試鍵結構5 〇的測試結果偏離了待測 元件62本身的電子特性。尤其注意的是，頂部金屬層588 _鄰接於待測元件62的部分係呈現漸縮狀，而非急劇地銳 減。截面積銳減會導致射頻測試鍵結構的電阻值增加，而 降低射頻測試鍵結構的準確性。換句話說，由於頂部金屬 層588的結構係呈現漸縮狀，因此本發明可提升射頻測試 鍵結構50在測試時的準確性。 底部金屬層54與頂部金屬層58之間可包含有至少一 内部金屬層56 ’内部金屬層56的數量與結構可視晶粒產 _品之設計與待測元件62的特性而定，例如愈高頻的待測元 件62可使用愈多層内部金屬層56，而且於底部金屬層54、 各内部金屬層56與一頂部金屬層58之間可分別包含有一 介電層’用以避免各金屬層互相電性影響。現以單一内部 金屬層56為例’内部金屬層56包含有一區塊561、一區 塊563、一區塊564與一區塊566，分別對應至頂部金屬層 • 58之接地墊區域581、接地墊區域583、接地墊區域584 與接地墊區域586。區塊561、區塊563、區塊564與區塊 566之上利用複數個導電插塞（圖未示）穿過介電層（圖未示） 1313905 而分別電連接至相對應之接地墊區域581、接地塾區域 583、接地墊區域584與接地墊區域586 α區塊、區塊 563區塊564與區塊566之下則利用複數個導電插塞（圖 未示）穿過介電層而電連接至底部金屬層54。 除了區塊561、區塊563、區塊564與區塊566之外， 内部金屬層56亦可另包含有一外框，如第5圖所示之本發 _明第二較佳實施例’外框568對應於頂部金屬層58之樞形 結構588而設置，提供射頻測試鍵結構5〇更完善之電磁屏 蔽與保護。其中，區塊56卜區塊563、區塊564、區塊566 與外框568皆為金屬材.質。 有鑑於此，訊號墊區域582與訊號墊區域585可透過 頂部金屬層58而分別電連接至待測元件62之訊號連接端 馨624與訊號連接端628。接地塾區域581、接地塾區域⑻、 接地墊區域584與接地塾區域586則係電連接至待測元件 62之接地連接蠕622、接地連接端626與接地點。如此一 來，探針卡之探針就可接觸於射頻測試鍵結構50之訊號墊 區域582、585與接地塾區域581、583、584、586，進行 待測元件62之測試。 、。用參考第6圖，第6圖為本發明第三較隹實施例射頻 I式鍵、（構之各層組件之電路佈局的示意圖。如第6圖所 16 1313905 不》射頻測試鍵結構70包含有一基底72、一底部金屬層 74、至少一内部金屬層76與一頂部金屬層78。基底72可 以為一晶圓，定義有複數個晶粒區域722，與至少一切割 道區域724位於晶粒區域722之間。基底72之切割道區域 724具有一狭長測試區域726，作為射頻測試鍵結構70之 .· · 預定位置。 基底72之狹長測試區域726上可包含有一待測元件 82，待測元件82為一射頻元件，例如一 MOS電晶體或是 一 MOS電晶體之等效電路。待測元件82之四邊具有四個 連接端，分別為接地連接端822、訊號連接端824、接地連 接端826與訊號連接端'828，並分別電蓮接至待測元件82 之源極、汲極、基底72與閘極。 底部金屬層74位於基底72上方之狹長測試區域726 内，本質上係為一狹長之矩形金屬片，且可電連接至一接 地點（圖未示）。底部金屬層74具有一容置開口 742，用以 暴露出待測元件82之訊號連接端824與訊號連接端828。 底部金屬層74與待測元件82之接地連接端822、接地連 接端826相接觸，藉以電連接至待測元件82之源極與基底 72。 頂部金屬層78係為成片的金屬墊，位於狹長測試區域 I313905 .726内之内部金屬層76上，本質上為一狹長之矩形金屬 •片。本實施例之頂部金屬層78上定義有二個訊號墊區域與 〜個接地墊區域’呈單行排列而平行設置於狹長測試區域 726内’由左至右依序為接地墊區域78卜訊號墊區域782、 矾號墊區域785與接地墊區域786(G-S-S-G)，用來與測試 之探針電連接。訊號墊區域782、785與接地墊區域781、 • 786之形狀可為矩形、六角形、八角形或圓形，依結構需 要而定，此處以八角形之訊號墊區域782、785與接地墊區 域781、783、784、786為例進行說明。 頂部金屬層78包含有至少一絕緣開口，位於訊號墊區 域782、785與接地墊區域781、786之間以及訊號墊區域 782、785彼此之間，使訊號墊區域782、785與接地墊區 域781、786分隔，並使訊號墊區域782、785彼此分隔。 籲例如此處頂部金屬層78包含有一絕緣開口 842，絕緣開口 842延伸而環繞於訊號墊區域782周圍與訊號墊區域785 周圍，可於頂部金屬層78内電性分離接地墊區域781與訊 號墊區域782、電性分離接地墊區域781與訊號墊區域 785、電性分離接地墊區域7g6與訊號墊區域782、並且電 性分離接地墊區域786與訊號墊區域785。此外，絕緣開 • 口 842使頂部金屬層78之邊緣區域構成一框形結構788， 接地墊區域781與接地墊區域786可透過框形結構788而 .彼此電連接。由於頂部金屬層788鄰接於待測元件82的部 18 1313905 分係呈現由邊緣至待測元件82漸縮狀，因此本發明可提升 . . . ' 射頻測試鍵結構50的準確性。 内部金屬層76包含有一區塊761與一區塊766，分別 對應至頂部金屬層78之接地墊區域781與接地墊區域 786。區塊761與區塊766之上利用複數個導電插塞（圖未 示）電連接至對應之接地墊區域781與接地墊區域786。區 _塊761與區塊766之下則利用複數個導電插塞（圖未示）電 連接至底部金屬層74。除了區塊761與區塊766之外，内 部金屬層76亦可另包含有一外框（圖未示），外框係相對應 於頂部金屬層78之框形結構788而設置，提供射頻測試鍵 結構70更進一步之保護。其中，區塊761、區塊766與外 .· · 框皆為金屬材質。 JI 因此，訊號墊區域782與訊號墊區域784可透過頂部 金屬層78而分別電連接至待測元件82之訊號連接端824 與訊號連接端828。接i也墊區域781與接地墊區域786則 係電連接至待測元件82之接地連接端822、接地連接端826 . . ' 與接地點。如此一來，探針卡之探針就可接觸於射頻測試 鍵結構70之訊號墊區域782、785與接地墊區域78卜786， 進行待測元件82之測試。 * 另外，本發明之射頻測試鍵結構另可具備不同之樣 19 1313905 以配合不同将測元件之結構與不同规袼啤功能之探對 卡的探針配置，例如： 第四較佳實施例：射頻測試鍵結構包含有二個訊號塾區域 與二個接地㈣域，排列由左至右依序為訊號塾區 域、接地墊區域、接地墊區域與訊號墊區域 (S-G-G-S)； 第五較佳實施例：射頻測試鍵結構包含有二個訊號塾區域 與二個接地塾區域’排列由左至右依序為訊號墊區 域、接地墊區域、訊號墊區域與接地墊區域 (S-G-S-G)； 第六較佳實施例：射頻測試鍵結構包含有二個訊號塾區域 與三個接地墊區域，排列由左至右依序為接地墊區 域、訊號墊區域、.揍地墊區域、訊號墊區域與接地墊 區域(G-S-G-S-G)。 特別注思的是，上述各實施例之待測元件以可替換為 其他測試兀件，例如替換為一斷路元件（〇pen c〇mp〇nent)、 一短路元件（short component)或一通路元件（thr〇ugh component)。斷路元件、短路元件或通路元件之四邊同樣 具有四個連接端’可電連接至射_試鍵結構之訊號整區 域與接地墊區域。然而，於斷 _ '辦略件内，四個連接端彼此 不電性連接，以形成斷路之雷肷 电略。於短路元件内，四個連 接端可利用導線直接電性連接，丨、，^ ^ 从形成短路之電路。於通 20 1313905 ’與_·鍵結構之訊號級 1接=用導後直接電性連接'而與射_二 品域相電連接之二_連接㈣不電性連接。 舉例說明，當進行一 MOS電晶體之測試時，可同時製 作一具有MOS電晶體之射頻測試鍵結構與一具有短路元 件之射頻測試鍵結構。之後，利用探針測量具有M〇s電晶 _體之射頻測5式鍵結構與具有娘路元件之、射頻測試鍵續構， 再用二個射頻測試鍵結構的測試數據進行比對與計算，以 得到所測量之MOS電晶體的電子特性。 由於頂部金屬層之訊號些區域與接地整區域係呈單行 排列而平行於狹長測試區域，因此本發明之射頻測試鍵結 構便可設置於切割道等狹長區域中，既可於製程中進行即 癱時測試，又不會佔據過多之晶粒區域的空間。 響 此外，由於訊號墊區域係利用大面積的頂部金屬層電 連接至待測元件，因此可利用射頻測試鍵結構而正確地測 得射頻元件的電子特性.，避免因複雜而狹窄的連接線路導 致射頻測試鍵結構扭曲了待測元件的電子特性，而使待測 元件的測試結果改變。 . 另一方面，由於底部金屬層、内部金屬層與頂部金屬 1313905 •層可彼此電連接，並且電連接至接地點，因此可使整個射 .頻測試鍵結構構成-立體的電磁屏蔽。尤其底部金屬層與 頂部金屬層皆為大面積的金屬結構.，且，頂部金屬層又具有 框形結構來隔離外部電子訊號，因此本發明之射頻測試鍵 結構可提供一良好的電磁屏蔽，保護射頻測試鍵結構不受 外^電磁干擾，進而提升射頻測試鍵結構的準確性。尤其 ⑩注意的是’本發明所述之㈣金屬層係為—選擇性之元 件，換句話說，本發明之射頻測試鍵結構亦可不具備内部 金屬層，而是利用複數個導電插塞使頂部金屬層之接地塾 區域電連接至底部金屬層，構成—立體的電磁屏蔽。 以上所述僅為本發明之較佳實施例，凡依本發明申請專 利範圍所做之均㈣化與修飾，皆制本魏之涵蓋範圍。 # 【圖式簡單說明】 第1圖為一傳統射頻測試鍵之示意圖。 第2圖為一習知射頻測試鍵之示意圖。 第3圖為本發明第一較佳實施例射頻測試鍵結構之電路佈 局的示意圖。 第4圖為第3圖所示之射頻賊鍵結構、之俯視示意圖。 第5圖為本發明第二較佳實施例射頻測試鍵結構之電路佈 局的示意圖。 第6圖為本發明第三較佳實施例射頻測試鍵結構之電路佈 22 1313905 局的示意圖。 【主要元件符號說明】 1 第一方向 10 12 基底 14a 14b 後訊號墊 18 20 射頻測試鍵 22 • 28 待測元件 30 50 射頻測試鍵結構 52 54 底部金屬層 56 58 頂部金屬層 62 70 射頻測試鍵結構 72 74 底部金孱層 76 78 頂部金屬層 82 φ 142 前區塊 144 146 後區塊 148 164 右金屬片 164a 164b 接地墊 168 168a 接地墊 168b 182 閘極連接端 184 186 汲極連接端 188 242 金屬連線 244 * 246 金屬連線 248 射頻測試鍵 前訊號墊 待測元件 基底 切割道區域 基底 内部金屬層 待測元件 基底 内部金屬層 待測元件 右區塊 左區塊 接地墊 左金屬片 接地墊 源極連接端 基底連接端 金屬連線 金屬連線 23 1313905 261 接地墊 263 接地墊 265 訊號墊 282 閘極連接端 286 汲極連接端 522 晶粒區域 526 狹長測試區域 561 區塊 564 區塊 568 外框 582 訊號墊區域 584 接地墊區域 586 接地塾區域 622 接地連接端 626 接地連接端 642 第一絕緣開口 646 第三絕緣開口 724 切割道區域 742 容置開口 766 區塊 782 訊號塾區域 786 接地墊區域 262 訊號墊 264 接地墊 266 接地塾 284 源極連接端 288 基底連接端 524 切割道區域 542 容置開口 563 區塊 566 區塊 581 接地墊區域 583 接地塾區域 585 訊號墊區域 588 框形結構 624 訊號連接端 628 訊號連接端 644 第二絕緣開口 722 晶粒區域 726 狹長測試區域 761 區塊 781 接地墊區域 785 訊號墊區域 788 框形結構 24 1313905 822 接地連接端 824 訊號連接端 826 接地連接端 828 訊號連接端 842 絕緣開口 25U-radio is widely used to transport new radio products. In the process of radio equipment, in order to maintain the stability of product quality, it is necessary to continue online testing for the produced RF components (4). 1. You can make several test key structures after the dicing of the wafer or on the surface of a monitor wafer, that is, the various elements of the RF on the die. At the same time as the semiconductor process, the same procedure is used to simulate the same process on the crystal plate by making a test piece on the surface of the wafer or the surface of the monitor. Then, using a test device such as a probe to contact the 啊州忒 key, measure the parameters of the test component, and use the test result as an indicator to check whether the 淘 θ _ 衣 疋 is normal and monitor each process step m Defect '(9) has the effect of controlling product quality. 1313905 • Please refer to the i-th diagram, which is a schematic diagram of a conventional RF test button. As shown in Fig. 1, the RF test key 10 includes a substrate 12, a bottom metal layer and a top metal layer. The substrate 12 includes a device under test (DUT) 18' such as a metal-oxide semiconductor (MOS) transistor. The device under test 18 has four connection ends, which are respectively a front connection terminal 182, a source connection end 184, a drain connection end 186 and a base connection end 188 in the order of front, right, rear and left in the figure, and are respectively electrically connected. Connected to the gate of the device under test 18, the source, the drain and the substrate. The bottom metal layer is comprised of a front block 142, a right block 144, a rear block 146 and a left block 148. The front block 142, the right block 144, the rear block 146 and the left block 148 surround the component 18 to be tested, and are respectively connected to the corresponding gate connection end 182, the source connection end 184, and the immersion connection end. 186 is coupled to the substrate 188. The front block M2 and the rear block 146 respectively define a front signal pad 14a and a rear signal pad 14b for electrically connecting with the probe. The top metal layer is above the bottom metal layer, and a dielectric layer (not shown) is further disposed between the top metal layer and the bottom metal layer. The top metal layer includes a right metal piece 164 and a left metal piece 168' respectively passing through a dielectric layer (not shown) by a via plug to electrically connect to the right block 144 and the left area of the bottom metal layer, respectively. Block 148. The right metal piece 164 and the left metal piece 168 are each an elongated metal piece parallel to a first direction 1. In the right metal piece 164 «, a ground pad 164a and a grounding bar 164b are respectively defined at the front and rear ends. Before the left metal piece 168 of the 8 1313905, a ground pad 1683 and a ground are respectively defined at the rear end, and the ground pad 168a is made. The front signal pad i4a and the grounding pad I64a are arranged perpendicular to the first direction 1 to form a front row connection region, and the ground pad 168b, the rear signal pad 14b and the ground pad 164b are arranged perpendicular to the first direction j to form a rear row connection region. . In this way, the probes of the probe card can respectively contact the connection area of the front row and the connection area of the rear row of the RF test key 10 to test the component 18 to be tested. However, since the structural design of the conventional RF test button 10 is too large to be placed in the scribe line, which increases the difficulty of the process and the test, the conventional technique derives an RF test button located at the scribe line. Please refer to Figure 2'. Figure 2 is a schematic diagram of a conventional RF test button. As shown in Fig. 2, the radio frequency test key 20 includes a base ash 22, at least four metal wires 242, 244, 246, 248 and six rectangular metal iridium 261, 262, φ 263, 264, 265, 266. The substrate 22 includes a device 28 to be tested. The four sides of the device under test 28 have a gate connection end 282, a source connection end 284, a drain connection end 286 and a base connection end 288, respectively, and are electrically connected to The gate, source, drain and substrate of the device under test 28. Wherein, the metal wires 242, 244, 24_6, 248 and the rectangular metal pads 261, 262, 263, 264, 265, 266 are prepared by a multiple metal interconnect process, and six rectangular metal pads 261, 262, 263, 264 are used. 265 and 266 are arranged in a single row and are arranged in parallel in a dicing area 30. The grounding pad 261, the signal 塾262, the grounding 263, the grounding pad 264, the signal potential 1313905 265 and the grounding pad 266 are sequentially arranged from left to right. Used to electrically connect to the probe. The metal connection 242 is used to electrically connect the signal pad 262 with the gate connection end 282, the metal connection 244 for electrically connecting the ground pad 266 and the source connection end 284, and the metal connection 246 for electrically connecting the signal pad 265 to the drain connection. The terminal 286 and the metal connection 248 are used to electrically connect the ground pad 261 and the substrate connection end 288. The conventional RF test key 20 is electrically connected by an elongated metal connection. Since the resistance of the conductor is inversely proportional to the wearing area, the elongated metal connection significantly increases the internal resistance of the RF test key 20, so that the internal resistance of the RF test key 20 is significantly increased. The test result of the RF test key 20 is too different from the test result of the actual RF component. As a result, even if the conventional RF test key 20 can be disposed in the dicing area 30, the electronic characteristics of the RF component cannot be correctly simulated, and the accuracy of the RF test key 20 is lost. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide an RF test key structure that solves the problems that cannot be overcome by conventional techniques, thereby improving the accuracy of the RF test key structure. According to the patent application scope of the present invention, the present invention provides a radio frequency test key structure located in a scribe line region, comprising a substrate, a device to be tested, and at least two metal layers. At least one scribe line region is defined on the substrate. The component to be tested is located in the area of the scribe line on the substrate, and includes at least two signal terminals 10 1313905 and at least two ground terminals. The metal layer is located in the area of the dicing street, and the package 'containing a bottom metal layer is located above the substrate, and a top metal layer is located above the bottom metal layer. The top metal layer is a metal pad with a minimum of two signal pad regions and at least two ground pad regions. The signal pad region is electrically connected to the signal connection end of the device to be tested, and the ground pad region is electrically connected to the device to be tested. Ground connection. The signal pad area and the ground pad area are arranged in a single row parallel to the scribe line area, and the top metal layer includes an insulating opening between the two signal pad regions and the aforementioned two ground pad regions and the foregoing two. The signal pad regions are spaced apart from each other such that the two signal pad regions are separated from the two ground pad regions, and the two signal pad regions are separated from each other. Since the signal pad area and the ground pad area of the RF test key structure of the present invention are arranged in a single row, they can be disposed in the scribe line area. In addition, the bottom metal layer and the top metal layer of the RF test key structure have a large area of the ground metal region, so that an electromagnetic shielding can be formed to protect the RF test key structure from external electromagnetic interference, thereby improving the accuracy of the RF test key structure. Sex. In order to enable the reviewing committee to take a closer look at the features and technical contents of the present invention, please refer to the following detailed description of the invention and the accompanying drawings. The drawings are for illustrative purposes only and are not intended to limit the invention. 1313905 [Embodiment] «Please refer to FIG. 3 and FIG. 4'. FIG. 3 is a schematic diagram showing the circuit layout of each layer component of the radio frequency test key structure according to the first preferred embodiment of the present invention, and FIG. 4 is a third diagram. A top view of the RF test key structure shown. As shown in Figures 3 and 4, the RF test key structure 50 includes a substrate 52, a bottom metal layer 54, at least one inner metal layer 56 and a top metal layer 58 from bottom to top. The substrate 52 may be a part of a wafer, a silicon-on-insulator (SOI) or a strained silicon, and the like, including a semiconductor such as polycrystalline or doped polysilicon. Substrate. Moreover, a plurality of die regions 522 and at least one scribe runner region 524 are defined between the die regions 522. The scribe line region 524 of the substrate 52 has an elongated test region 526 that serves as a predetermined location for the RF test key structure 50. The narrow test area 526 of the substrate 52 may include a device to be tested _62'. In the first preferred embodiment, the device under test 62 is a radio frequency component, such as a MOS transistor or a MOS transistor. Circuit. The four sides of the component to be tested 62 have four connection ends, which are respectively a ground connection end 622, a signal connection end 624, a ground connection end 626 and a signal connection end 628 in the order of front, right, rear and left in the figure, and are respectively electrically connected. The source, the drain, the substrate 52 and the gate of the device under test 62. The bottom metal layer 54 is located in the elongated test area 526 above the substrate 52. It is essentially an elongated rectangular metal sheet and can be electrically connected to the location of the 1313905 (not shown). The bottom metal layer 54 has a receiving opening (10) for exposing the signal connecting dimension 624 of the component to be tested 62 to the signal connecting end, and the bottom. The P metal @54 is further in contact with the ground connection terminal (2) and the ground connection terminal 626 of the device under test 62, thereby being electrically connected to the source of the device under test (7) and the substrate 52. The metal layer 58 is a piece of metal 塾 'located on the bottom metal layer 54 in the elongated test area 526, essentially a narrow rectangular metal piece. In the first preferred embodiment, the top metal layer 58 defines two signal 塾 regions and four ground 塾 regions, arranged in a single row and parallel to the elongated test region 526, and the ground pad region is sequentially arranged from left to right. The signal pad area 582, the ground pad area 583, the ground pad area 584, the signal pad area 585 and the ground pad area 586 (GSGGSG) are used to electrically connect to the probe being tested. According to the relative position, the ground pad area 581 and the ground pad area ❿ 586 are edge ground pad areas, and the pad area 583 and the ground pad area 584 are central ground pad areas. In addition, the first preferred embodiment illustrates the octagonal signal 塾 regions 582 and 585 and the ground pad regions 581, 583, 584, and 586 as an example, but is not limited thereto, and the signal pad region 582, The shape of the 585 and the grounding 塾 regions 581, 583, 584, 586 may be any geometric shape such as a rectangle, a hexagon, an octagon or a circle, and the better the signal pad area and the ground pad area are closer to a circle. Electrical effects are all within the scope of the present invention. 1313905. The top metal layer 58 includes at least one insulating opening between the signal pad region 582, 585 and the ground germanium regions 58!, 583, 584, 586 and the signal pad regions 582, 585. The signal pad regions 582, 585 are separated from the ground germanium regions 58 583, 584, 586 and separate the signal pad regions 582, 585 from each other. For example, the top metal layer 58 herein includes a first insulating opening. The first insulating opening 642 surrounds the signal pad regions 582, 585 and the ground pad regions 583, 584 and passes between the ground pad regions 583, 584. Therefore, the first insulating opening 642 can electrically separate the ground pad region 581 and the signal pad region 582, the electrically separated ground pad region 581 and the signal 塾 region 585, the electrically separated ground pad region 586 and the signal pad in the top metal layer 58. Region 582 and electrically separate ground pad region 586 from signal pad region 585. As shown, the first insulating opening 642 allows the edge regions of the top metal layer 58 to form a frame structure 588 through which the ground pad region 581 and the ground pad region 586 can be electrically connected to each other through the frame structure 588. The portion of the top metal layer 588 that abuts the element under test 62 exhibits a tapered shape from the edge to the element under test 62. In addition to the first insulating opening 642, the top metal layer 58 further includes a second insulating opening 644 and a third insulating opening 646. The second insulating opening 644 surrounds the ground pad region 583 for electrically separating the ground pad region 583 from the signal pad region 582 in the top metal layer 58. The third insulating opening 646 surrounds the ground pad region 584, and is used to electrically separate the ground metal pad 58 from the ground pad region 584 and the signal pad region 585. 1313905 • In this manner, the signal pad area 582 and the signal pad area 585 can be electrically connected to the component 62 to be moved through the oversized top metal layer 58. The connecting end 624 and the signal connecting end 628 are not in electrical contact with the ground pad area M1, 583, 584, 586, and the test result of the radio frequency test key structure 5 不会 is not caused by the complicated and narrow connecting line. It deviates from the electronic characteristics of the element under test 62 itself. It is particularly noted that the portion of the top metal layer 588 _ adjacent to the element under test 62 is tapered rather than sharply sharpened. A sharp decrease in the cross-sectional area results in an increase in the resistance of the RF test key structure and a decrease in the accuracy of the RF test key structure. In other words, since the structure of the top metal layer 588 is tapered, the present invention can improve the accuracy of the RF test key structure 50 during testing. Between the bottom metal layer 54 and the top metal layer 58 may comprise at least one inner metal layer 56. The number and structure of the inner metal layer 56 may depend on the design of the die and the characteristics of the component to be tested 62, for example, the higher The frequency detecting component 62 can use a plurality of inner metal layers 56, and a dielectric layer ′ can be respectively included between the bottom metal layer 54, each of the inner metal layers 56 and a top metal layer 58 to avoid mutual metal layers. Electrical impact. Now taking a single internal metal layer 56 as an example, the inner metal layer 56 includes a block 561, a block 563, a block 564 and a block 566, respectively corresponding to the ground pad region 581 of the top metal layer 58 and grounding. Pad area 583, ground pad area 584 and ground pad area 586. Block 561, block 563, block 564 and block 566 are electrically connected to the corresponding ground pad region through a plurality of conductive plugs (not shown) through a dielectric layer (not shown) 1313905. 581, grounding germanium region 583, grounding pad region 584 and grounding pad region 586 alpha block, block 563 block 564 and block 566 under a plurality of conductive plugs (not shown) through the dielectric layer Electrically connected to the bottom metal layer 54. In addition to the block 561, the block 563, the block 564, and the block 566, the inner metal layer 56 may further include an outer frame, as shown in FIG. 5, which is the second preferred embodiment of the present invention. Block 568 is provided corresponding to the pivotal structure 588 of the top metal layer 58 to provide a more complete electromagnetic shielding and protection of the RF test key structure. The block 56, the block 563, the block 564, the block 566 and the outer frame 568 are all made of metal. In view of this, the signal pad area 582 and the signal pad area 585 can be electrically connected to the signal connection terminal 624 and the signal connection end 628 of the device under test 62 through the top metal layer 58 respectively. The grounding germanium region 581, the grounding germanium region (8), the grounding pad region 584 and the grounding germanium region 586 are electrically connected to the ground connection creeper 622, the ground connection terminal 626 and the grounding point of the device under test 62. In this way, the probe of the probe card can contact the signal pad area 582, 585 of the RF test key structure 50 and the grounding area 581, 583, 584, 586 for testing the component 62 to be tested. ,. Referring to FIG. 6, FIG. 6 is a schematic diagram showing a circuit configuration of a radio frequency I type key according to a third embodiment of the present invention (a circuit layout of each layer component of the structure. As shown in FIG. 6 13 1313905 no) the radio frequency test key structure 70 includes a substrate 72, a bottom metal layer 74, at least one inner metal layer 76 and a top metal layer 78. The substrate 72 can be a wafer defining a plurality of die regions 722, and at least one scribe region 724 is located in the die region Between the 722. The scribe line region 724 of the substrate 72 has a slit test area 726 as a predetermined position of the RF test key structure 70. The narrow test area 726 of the substrate 72 may include a device to be tested 82, the component to be tested 82 is an RF component, such as an MOS transistor or an equivalent circuit of a MOS transistor. The four sides of the component to be tested 82 have four terminals, which are a ground connection terminal 822, a signal connection terminal 824, and a ground connection terminal 826. The signal connection terminal '828 is connected to the source, the drain, the substrate 72 and the gate of the device under test 82. The bottom metal layer 74 is located in the narrow test area 726 above the substrate 72, which is essentially a The rectangular metal piece is electrically connected to a grounding point (not shown). The bottom metal layer 74 has a receiving opening 742 for exposing the signal connection end 824 and the signal connection end 828 of the component 82 to be tested. The bottom metal layer 74 is in contact with the ground connection end 822 and the ground connection end 826 of the device under test 82, thereby being electrically connected to the source of the device under test 82 and the substrate 72. The top metal layer 78 is a metal pad located in a sheet. The inner metal layer 76 in the narrow test area I313905.726 is essentially an elongated rectangular metal piece. The top metal layer 78 of the embodiment defines two signal pad areas and a ground pad area as a single line. Arranged and arranged in parallel in the elongated test area 726 'from left to right, the ground pad area 78, the signal pad area 782, the nick pad area 785 and the ground pad area 786 (GSSG) are used to test the probe. The signal pad area 782, 785 and the ground pad area 781, • 786 may be rectangular, hexagonal, octagonal or circular, depending on the structure, here the octagonal signal pad area 782, 785 and ground. pad The fields 781, 783, 784, and 786 are taken as an example. The top metal layer 78 includes at least one insulating opening between the signal pad regions 782, 785 and the ground pad regions 781, 786 and the signal pad regions 782, 785 The signal pad regions 782, 785 are separated from the ground pad regions 781, 786, and the signal pad regions 782, 785 are separated from each other. For example, the top metal layer 78 here includes an insulating opening 842, and the insulating opening 842 extends around the signal. Around the pad region 782 and around the signal pad region 785, the ground pad region 781 and the signal pad region 782, the electrically separated ground pad region 781 and the signal pad region 785, and the electrically separated ground pad region can be electrically separated in the top metal layer 78. 7g6 and signal pad area 782, and electrically separate ground pad area 786 and signal pad area 785. In addition, the insulating opening 842 causes the edge regions of the top metal layer 78 to form a frame structure 788 through which the ground pad region 781 and the ground pad region 786 can be electrically connected. Since the top metal layer 788 is adjacent to the portion 18 1313905 of the element under test 82, the portion appears to be tapered from the edge to the element under test 82, the present invention can improve the accuracy of the RF test key structure 50. The inner metal layer 76 includes a block 761 and a block 766 corresponding to the ground pad region 781 and the ground pad region 786 of the top metal layer 78, respectively. Block 761 and block 766 are electrically coupled to corresponding ground pad region 781 and ground pad region 786 by a plurality of conductive plugs (not shown). The area _ block 761 and the block 766 are electrically connected to the bottom metal layer 74 by a plurality of conductive plugs (not shown). In addition to the block 761 and the block 766, the inner metal layer 76 may further include an outer frame (not shown), and the outer frame is disposed corresponding to the frame structure 788 of the top metal layer 78 to provide a radio frequency test key. Structure 70 is further protected. Among them, the block 761, the block 766 and the outer frame are all made of metal. Therefore, the signal pad area 782 and the signal pad area 784 can be electrically connected to the signal connection end 824 and the signal connection end 828 of the device under test 82 through the top metal layer 78, respectively. The pad area 781 and the ground pad area 786 are electrically connected to the ground connection end 822 of the device under test 82, the ground connection end 826 . . . and the ground point. In this way, the probe of the probe card can contact the signal pad area 782, 785 and the ground pad area 78 of the RF test key structure 70 to test the component to be tested 82. In addition, the RF test key structure of the present invention can be provided with different types of 19 1313905 to match the probe configuration of the different components of the test component and the different beer functions, for example: Fourth preferred embodiment: The RF test key structure comprises two signal 塾 regions and two ground (four) domains arranged in order from left to right for the signal 塾 region, the ground pad region, the ground pad region and the signal pad region (SGGS); Example: The RF test key structure includes two signal 塾 regions and two ground 塾 regions arranged in order from left to right for the signal pad region, the ground pad region, the signal pad region and the ground pad region (SGSG); A preferred embodiment: the RF test key structure includes two signal 塾 regions and three ground pad regions, arranged from left to right in order to ground pad region, signal pad region, 揍 pad region, signal pad region and ground pad Area (GSGSG). It is particularly noted that the components to be tested of the above embodiments can be replaced with other test components, for example, replaced by a circuit breaker component, a short component or a channel component. (thr〇ugh component). The four sides of the circuit breaking element, the shorting element or the path element also have four terminals 'which can be electrically connected to the signal entire area and the ground pad area of the radiation-test key structure. However, in the disconnected device, the four terminals are not electrically connected to each other to form a thunder of the disconnection. In the short-circuiting component, the four terminals can be directly electrically connected by wires, and the circuit can be short-circuited. Yutong 20 1313905 ' is connected to the signal level of the _· key structure 1 = directly electrically connected after the conductor' and is electrically connected to the second _ domain (the fourth) is not electrically connected. For example, when testing a MOS transistor, an RF test key structure having a MOS transistor and an RF test key structure having a short-circuit element can be simultaneously fabricated. After that, the probe is used to measure the radio frequency measurement type 5 key structure with the M〇s electro-crystal body and the RF test key continuation with the Niang road component, and then the test data of the two RF test key structures are used for comparison and calculation. To obtain the electronic characteristics of the measured MOS transistor. Since the signal regions of the top metal layer and the grounded entire region are arranged in a single row and parallel to the elongated test region, the RF test key structure of the present invention can be disposed in a narrow region such as a dicing street, which can be performed in the process. When testing, it does not occupy too much space in the grain area. In addition, since the signal pad area is electrically connected to the device to be tested by using a large area of the top metal layer, the electronic characteristics of the RF element can be accurately measured by using the RF test key structure to avoid complicated and narrow connection lines. The RF test key structure distorts the electronic characteristics of the component to be tested, and changes the test result of the component to be tested. On the other hand, since the bottom metal layer, the inner metal layer and the top metal 1313905 • layers can be electrically connected to each other and electrically connected to the ground point, the entire radio frequency test key structure can be constructed to constitute a three-dimensional electromagnetic shield. In particular, the bottom metal layer and the top metal layer are both large-area metal structures. Moreover, the top metal layer has a frame structure to isolate external electronic signals, so the RF test key structure of the present invention can provide a good electromagnetic shielding and protection. The RF test key structure is not subject to external electromagnetic interference, thereby improving the accuracy of the RF test key structure. In particular, it is noted that the (four) metal layer described in the present invention is a selective element. In other words, the radio frequency test key structure of the present invention may not have an internal metal layer, but a plurality of conductive plugs may be used to make the top portion. The grounding 塾 region of the metal layer is electrically connected to the bottom metal layer to form a three-dimensional electromagnetic shielding. The above description is only the preferred embodiment of the present invention, and all the modifications and modifications made by the patent application scope of the present invention are within the scope of the present invention. # [Simple description of the diagram] Figure 1 is a schematic diagram of a conventional RF test button. Figure 2 is a schematic diagram of a conventional RF test button. Figure 3 is a schematic diagram showing the circuit layout of the radio frequency test key structure of the first preferred embodiment of the present invention. Fig. 4 is a top plan view showing the structure of the radio frequency thief key shown in Fig. 3. Figure 5 is a schematic diagram showing the circuit layout of the radio frequency test key structure of the second preferred embodiment of the present invention. FIG. 6 is a schematic diagram of a circuit board 22 1313905 of a radio frequency test key structure according to a third preferred embodiment of the present invention. [Main component symbol description] 1 First direction 10 12 Substrate 14a 14b Rear signal pad 18 20 RF test key 22 • 28 Element to be tested 30 50 RF test key structure 52 54 Bottom metal layer 56 58 Top metal layer 62 70 RF test key Structure 72 74 bottom metal layer 76 78 top metal layer 82 φ 142 front block 144 146 rear block 148 164 right metal piece 164a 164b ground pad 168 168a ground pad 168b 182 gate connection 184 186 drain connection 188 242 Metal Connection 244 * 246 Metal Connection 248 RF Test Key Front Signal Pad Test Element Base Cutting Channel Area Base Internal Metal Layer Test Element Base Internal Metal Layer Test Element Right Block Left Block Ground Pad Left Metal Plate Grounding Pad Source connection base connection metal connection metal connection 23 1313905 261 Grounding pad 263 Grounding pad 265 Signal pad 282 Gate connection 286 Drain connection 522 Grain area 526 Narrow test area 561 Block 564 Block 568 Block 582 Signal Pad Area 584 Grounding Pad Area 586 Grounding Area 622 Grounding Connection 626 Grounding Connection 642 An insulating opening 646 a third insulating opening 724 a cutting track area 742 a receiving opening 766 a block 782 a signal 塾 area 786 a ground pad area 262 a signal pad 264 a ground pad 266 a ground 塾 284 a source connection end 288 a base connection end 524 a scribe line area 542 Locating opening 563 block 566 block 581 grounding pad area 583 grounding 塾 area 585 signal pad area 588 frame structure 624 signal connection end 628 signal connection end 644 second insulation opening 722 grain area 726 narrow test area 761 block 781 Ground pad area 785 Signal pad area 788 Frame structure 24 1313905 822 Ground connection 824 Signal connection 826 Ground connection 828 Signal connection 842 Insulation opening 25