TWI313520B - - Google Patents
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- TWI313520B TWI313520B TW95140174A TW95140174A TWI313520B TW I313520 B TWI313520 B TW I313520B TW 95140174 A TW95140174 A TW 95140174A TW 95140174 A TW95140174 A TW 95140174A TW I313520 B TWI313520 B TW I313520B
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1313520 九、發明說明: 【發明所屬之技術領域】 本發明疋有關於一種固態發光元件及其製造方法,特 別是指一種高亮度的發光二極體及其製造方法。 【先前技術】 發光一極體具有壽命長、省電、體積小、驅動電壓低 、等優點,是目前新一代的人造光源之一。 參閲圖1,一般,發光二極體丨包含一塊矩形板狀的基 材U、一層以氮化鎵系的半導體材料磊晶形成在該基材n 上的量子單纟2、-層形成在該量子單元2頂面的電流擴散 層12 ’及二片可提供電能的電極13。 該塊基材11 一般是由晶格常數與該量子單元2相匹配 的材料,例如藍寶石構成。 该層量子單元2具有一層包括一與該基材u連接的底 部211及一自該底部211的一中央區域向上凸起之延伸部 212的第一型披覆層21 (n_cladding “丫以)、一層自該第一 型批覆層21之延伸部212頂面向上形成的活性層22 ( active iayer),及一層自該活性層22頂面向上形成的第二型 批覆層 23 (p-cladding layer)。 該第一、二型披覆層21、23相對該活性層22形成量 子能障而可以光電效應產生光。 該電流擴散層12以可透光且可使電流分散均勻的材料 ,例如銦錫氧化物(業界習稱IT〇 )自該第二型批覆層U 頂面向上形成,而可使得以電極12施加電能時,電流水平 131352ο 横向均勻地擴散流通後再垂直通過該第一型批覆層2i、活 性層22、第二型批覆層23,進而提昇内部發光的量子效應 〇 該第一型批覆層21的延伸部212 '活性層22、第二型 批覆層23與電流擴散層12形成可供内部產生的光向外射 出的平台14,一般’業界通稱此平台14為咖以。 該二電極13是以例如銅、銀等金屬及/或其合金構成而 成薄片狀,其中一片電極13設置在該量子單元2之第一型 被覆層21底部211頂面的角落,另一片電極13則與該片設 置在量子單元2之第-型披覆層21底部211角落的電極13 成對角線地設置於電流擴散層12頂面的角落上,且此兩片 電極13分別與第一型披覆層21與電流擴散層12相歐姆接 觸,而可對該量子單元12提供電能進而產生光。 當自該二片電極13施加電能時,電流經過該電流擴散 層12橫向水平分散流通後,再垂直通過該第一型批覆層21 丄活性層22、第二型批覆層23,而使該量子單元2以光電 效^產生光子,產生出的光子多數自第一型批覆層21的延 申。P 212、活性層22、第二型批覆層23與電流擴散層24 形成的長方體平自14 (mesa)頂面向外射出,而使該發光 二極體1向外發光。 ,由於第一型批覆層21的延伸部212、活性層22、第二 型抵覆層23與電流擴散層24所形成的平台ΐ4 (η·)頂 自t、,水平界Φ ’因此該量子“ 2卩光電效應產生的光 平台14頂面向外射出時,會受限於司乃耳定律( 6 1313520BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state light-emitting element and a method of manufacturing the same, and in particular to a high-luminance light-emitting diode and a method of manufacturing the same. [Prior Art] The light-emitting body has the advantages of long life, power saving, small volume, low driving voltage, and the like, and is one of the new generation of artificial light sources. Referring to FIG. 1, in general, a light-emitting diode includes a rectangular plate-shaped substrate U, and a layer of quantum germanium 2 formed on the substrate n by a gallium nitride-based semiconductor material is formed on the substrate The current diffusion layer 12' on the top surface of the quantum unit 2 and two electrodes 13 for supplying electrical energy. The bulk substrate 11 is generally composed of a material having a lattice constant matching the quantum unit 2, such as sapphire. The quantum unit 2 has a first type of cladding layer 21 (n_cladding) including a bottom portion 211 connected to the substrate u and an extending portion 212 protruding upward from a central portion of the bottom portion 211. a layer of active iayer formed from the top surface of the extension portion 212 of the first type of cladding layer 21, and a second layer of p-cladding layer formed from the top surface of the active layer 22 The first and second type cladding layers 21, 23 form a quantum energy barrier with respect to the active layer 22 to generate light by a photoelectric effect. The current diffusion layer 12 is made of a material that can transmit light and can uniformly disperse current, such as indium tin. An oxide (known in the industry as IT) is formed from the top surface of the second type of cladding layer U, so that when the electrode 12 is applied with electric energy, the current level 131352 is uniformly diffused laterally and then vertically through the first type of cladding layer. 2i, the active layer 22, the second type of cladding layer 23, thereby enhancing the quantum effect of internal light emission. The extension portion 212 of the first type of cladding layer 21, the active layer 22, the second type of cladding layer 23 and the current diffusion layer 12 are formed. For internally generated light The platform 14 is generally referred to as the platform 14 in the industry. The two electrodes 13 are formed in a sheet shape by a metal such as copper or silver and/or an alloy thereof, and one electrode 13 is disposed in the quantum unit 2 The corner of the top surface of the bottom portion 211 of the first type of coating layer 21, and the other electrode 13 is disposed on the current diffusion layer 12 diagonally to the electrode 13 provided at the corner of the bottom portion 211 of the first type cladding layer 21 of the quantum unit 2. The two electrodes 13 are in ohmic contact with the first type of cladding layer 21 and the current diffusion layer 12, respectively, and the quantum unit 12 can be supplied with electric energy to generate light. From the two electrodes 13 When electric energy is applied, the current is dispersed horizontally and horizontally through the current diffusion layer 12, and then vertically passes through the first type of cladding layer 21, the active layer 22, and the second type of cladding layer 23, so that the quantum unit 2 is generated by photoelectric effect. Photons, the photons generated are mostly extended from the first type of cladding layer 21. The rectangular parallelepiped formed by the P 212, the active layer 22, the second type cladding layer 23 and the current diffusion layer 24 are emitted from the top of the 14 (mesa) top surface, And causing the light emitting diode 1 to emit light outward The platform ΐ4 (η·) formed by the extension 212 of the first type cladding layer 21, the active layer 22, the second type resist layer 23 and the current diffusion layer 24 is topped from t, and the horizontal boundary Φ′ is thus the quantum “When the top of the light platform 14 produced by the photoelectric effect of 2卩 is emitted outward, it is limited by the law of Snell (6 1313520).
Snell’s Law)而僅有部分的光可順利自頂面向外射出,因此 就單一發光二極體1整體而言,會呈現出發光亮度不夠的 缺點。 也因此,已有多篇技術文獻提出粗化該平台14頂面, 進而提昇量子單元2以光電效應產生的光穿出平台14向外 發散的比率,提昇整體發光二極體1的發光亮度;但是整 體而s,如何有效改變元件出光角度的變化、提昇整體發 光二極體的發光亮度,仍是業界努力研究的重點之一。 【發明内容】 因此,本發明之目的,即在提供一種發光均勻且集中 的高亮度發光二極體。 此外,本發明之另一目的,即在提供一種發光均勻且 集中之高亮度發光二極體的製造方法。 於疋,本發明高亮度發光二極體,包含一塊板狀基材 、一層量子單元,及兩片電極。 該層量子單元’與該基材相連接並具有一層包括一與 。亥基材連接的底部及一自該底部的一中央區向上凸起之延 伸部的第一型披覆層、一層自該第一型批覆層之延伸部頂 面向上形成的活性層,及一層自該活性層頂面向上形成的 第一型批覆層,該第一、二型批覆層相對該活性層成量子 能障而以光電效應產生光’該第二型披覆層包括一層與該 活性層連接的堆疊部,及多數自該堆疊部頂面一體向上凸 伸且鬲度介於次微米尺度的光修正柱,該多數根光修正柱 與周遭介質的折射係數差使該量子單元以光電效應產生並 1313520 對應自該堆疊部頂面向外射出的光產生散射的次數增加, 進而實質提昇該發光二極體的發光亮度。 忒一片電極分別设置在該第一型彼覆層之底部的頂面 與該第二型批覆層堆疊部的頂面上,且分別與該第一、二 型披覆層相歐姆接觸而可對該量子單元提供電能。 再者,高亮度發光二極體的製造方法,包含以下步驟Snell's Law) and only part of the light can be smoothly emitted from the top to the outside, so that the single light-emitting diode 1 as a whole has the disadvantage of insufficient brightness. Therefore, a number of technical documents have proposed to roughen the top surface of the platform 14, thereby increasing the ratio of the light passing through the platform 14 generated by the photoelectric effect of the quantum unit 2, and increasing the luminance of the overall light-emitting diode 1; However, as a whole, how to effectively change the change of the light-emitting angle of the component and improve the luminance of the overall light-emitting diode is still one of the focuses of the industry. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a high-intensity light-emitting diode that emits light uniformly and concentrated. Further, another object of the present invention is to provide a method of manufacturing a high-intensity light-emitting diode which emits light uniformly and concentrated. In the present invention, the high-intensity light-emitting diode of the present invention comprises a plate-shaped substrate, a quantum unit, and two electrodes. The layer of quantum cells ' is connected to the substrate and has a layer comprising one and . a bottom portion of the base of the base material and a first type of coating layer extending upward from a central portion of the bottom portion, an active layer formed from the top surface of the extension portion of the first type of cladding layer, and a layer a first type of cladding layer formed from a top surface of the active layer, wherein the first and second type cladding layers form a quantum energy barrier with respect to the active layer to generate light by a photoelectric effect. The second type of cladding layer comprises a layer and the active layer a stacked portion of the layer connection, and a plurality of light-correcting columns integrally protruding upward from the top surface of the stacking portion and having a twist of submicron scale, the difference in refractive index between the plurality of light-correcting columns and the surrounding medium causes the quantum unit to have a photoelectric effect The number of generations of 1313520 corresponding to the light emitted from the top of the stacking portion is increased, thereby substantially increasing the luminance of the light emitting diode.忒 one electrode is respectively disposed on a top surface of the bottom of the first type of cladding layer and a top surface of the second type of cladding layer stacking portion, and is in ohmic contact with the first and second type cladding layers respectively The quantum unit provides electrical energy. Furthermore, the method for manufacturing a high-intensity light-emitting diode includes the following steps
先在一塊板狀的基材上以 —型批覆層、一層活性層,及 一、二型批覆層相對該活性層 生光。 半導體材料依序形成一層第 一層第二型批覆層,且該第 成量子能障而以光電效應產 接著選用銦錫氧化物在該第二形批覆層頂面形成一層 蝕刻保護層。First, a layer of the coating layer, an active layer, and a first and second type of coating layer are used to illuminate the active layer on a plate-shaped substrate. The semiconductor material sequentially forms a first layer of the second type of cladding layer, and the first quantum energy barrier is formed by photoelectric effect. Then, indium tin oxide is selected to form an etching protection layer on the top surface of the second cladding layer.
然後定義該蝕刻保護層頂面成一塊第一電極區、一塊 環圍該第一電極區的中央區、-塊與該中央區相間隔的第 -電《’及-塊環_中央區與第二電極區的外環區。 再自該量子單元之外環區向下姓刻移除-塊深度至該 第一型批覆層上半部的塊域,使對應該巾央區留存之 構成-個供内部以光電效應產生的光向外射出的平台;。 並且’自該量子單元之中央區向下餘刻移除一塊深度 為次微米尺度的塊域’使該第二型批覆層上半部對 央區留存之結構成多數根個別聳立且可與周遭介質相配合 而使光的行進方向改變的光修正柱。 接著移除對應該第一電極區所形成的光修正柱。 8 1313520 第一型批覆層頂面對應該第二電極區的位置 '以ι亥第一型批覆層對應該第-電極區的仅置上以導電材 科分別形成二>{電極,製得該高亮度發光二極體。 本發明的功效在於以銦錫氧化物形成可使得第二型批 覆層錢料_深度達次微米尺度的㈣保護層,並提 出完整的相配合製程,進而製作在第二型披覆層預定區域 形成多數根高度屬次微米尺度之光修正㈣發^極體戍 從而使得製得的發光二極體藉由光修正柱與周遭介質的相 配合而讓光產生散射的次數增加,以相對實f 極體本身的發光亮度。 光一 【實施方式】 有關本發明之前述及其他技術内容、特點與功效’在 以下配合參考圖式之二個較佳實施例的詳細說明中,將可 清楚的呈現。 在本發明被詳細描述之前,要注意的是,在以下的說 明内容中,類似的元件是以相同的編號來表示。 參閱圖2、圖3,本發明高亮度發光二極體3之一第一 較佳實施例,包含有一塊矩形板狀的基材31、一層連接( bonding)在該基材31上的量子單元4,及二片可提供電能 的電極32。 肩塊基材31具有一層基底層311及一層形成在該基底 層311上的反射層312,該基底層311是以例如具有高散熱 率的材料,例如銅、金、鋁.、銀等金屬或其合金、或是矽 等所構成,而可將元件作動產生的内熱導離元件本身,該 I3i352〇 反射層312是以具有高折射係數的材料,例如銀m 專形成在該基底層311上而可反射光。當然,該塊基材η 亦可以單純是由晶格常數與該量子單& 4相匹配的材料, =如藍寳石所構成,而易於蟲晶成長高品質的量子單元4 結才毒。Then defining a top surface of the etch protection layer into a first electrode region, a central region surrounding the first electrode region, and a first-electrode "-and-block ring_central region and a portion spaced apart from the central region" The outer ring region of the two electrode region. And then removing the block from the outer ring of the quantum unit to the block depth to the upper half of the first type of cladding layer, so that the composition corresponding to the central area of the towel is reserved for the internal photoelectric effect. a platform that emits light outward; And 'removing a block of sub-micron-scale from the central region of the quantum cell' to make the structure of the upper half of the second-type cladding layer remain in the central region and the plurality of roots stand alone and can be surrounded An optical correction column in which the medium cooperates to change the direction of travel of light. The light correction column formed corresponding to the first electrode region is then removed. 8 1313520 The top of the first type of cladding layer faces the position of the second electrode region, and the first electrode layer corresponding to the first type of coating layer is placed on the first electrode region to form two electrodes, respectively. The high brightness light emitting diode. The utility model has the advantages that the indium tin oxide is formed to make the second type of coating material _ depth up to the micron-scale (four) protective layer, and a complete matching process is proposed, thereby forming a predetermined area in the second type coating layer. Forming a light correction of a plurality of root heights on a sub-micron scale (4), so that the obtained light-emitting diodes increase the number of times the light is scattered by the cooperation of the light-correcting column and the surrounding medium, so as to be relatively real f The brightness of the polar body itself. [Embodiment] The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 2 and FIG. 3, a first preferred embodiment of the high-brightness light-emitting diode 3 of the present invention comprises a rectangular plate-shaped substrate 31 and a quantum unit bonded to the substrate 31. 4, and two electrodes 32 for supplying electrical energy. The shoulder block substrate 31 has a base layer 311 and a reflective layer 312 formed on the base layer 311. The base layer 311 is, for example, a material having a high heat dissipation rate, such as a metal such as copper, gold, aluminum, or silver. The alloy, or tantalum, is formed, and the internal heat generated by the element is guided away from the element itself. The I3i352〇 reflective layer 312 is formed on the base layer 311 by a material having a high refractive index, such as silver m. It can reflect light. Of course, the block substrate η can also be simply composed of a material whose lattice constant matches the quantum single & 4, = sapphire, and which is easy to grow and high quality quantum unit 4 is poisonous.
該層量子單元4以氮化鎵系的半導體材料蟲晶形成, 具有一層包括一與該基材31連接的底部411及一自該底部 411的-中央區域向上凸起之延伸部412的第一型披覆層^ :-層自該第-型批覆層41之延伸部412頂面向上形成的 活性層42,及-層自該活性層42頂面向上形成的第二型批 覆層43 * 該第一、二型披覆層41、43相對該活性層42形成量 子能障而可以光電效應產生光。 該第一型批覆層41的延伸部412、活性層42與第二型 批覆層43形成供内部產生的光向外射出的平台33 (即為一 般業界通稱之mesa )。 該第二型批覆層43包括一層與該活性層42連接的堆 疊部431,及多數自該堆疊部431頂面一體向上凸伸且高度 介於次微米尺度(約在1000A~5000A)的光修正柱432,二 多數根光修正柱432是經由深蝕刻所成型(製造方法請容 後再續),而可與周遭介質(此時是空氣)的折射係數差形 成類似於波導共振腔腔體舆路徑的效果,使該量子單元4 以光電效應產生並對應自該堆疊部43丨頂面向外行進的光 產生散射的次數增加,進而提昇發光二極體的發光亮度。 10 I313520 "亥一片電極3 2呈彼此相對遠離的對角線排列設置,其 中一片電極32連接在該第一型披覆層41底部411頂面的角 落上’並與該第一型批覆層52相歐姆接觸,另一片電極32 則連接在該第二型批覆層43頂面的角落上,並與該第二型 抵覆層43相歐姆接觸,而可對該量子單元4提供電能。The quantum unit 4 is formed of a gallium nitride-based semiconductor material, and has a layer including a bottom portion 411 connected to the substrate 31 and a first portion 412 extending upward from the central portion of the bottom portion 411. a type of overcoat layer ^: - an active layer 42 formed from the top surface of the extension portion 412 of the first type of cladding layer 41, and a second type of cladding layer 43 formed from the top surface of the active layer 42. The first and second type cladding layers 41, 43 form a quantum energy barrier with respect to the active layer 42 and can generate light by a photoelectric effect. The extension portion 412 of the first type of cladding layer 41, the active layer 42 and the second type of cladding layer 43 form a platform 33 (i.e., mesa generally known in the art) for internally generated light to be emitted outward. The second type of cladding layer 43 includes a stacking portion 431 connected to the active layer 42 and a plurality of light corrections which are integrally protruded upward from the top surface of the stacking portion 431 and have a height on the submicron scale (about 1000A to 5000A). Column 432, two of the plurality of light-correcting columns 432 are formed by deep etching (the manufacturing method is to be continued later), and the refractive index difference with the surrounding medium (in this case, air) is similar to that of the waveguide resonant cavity. The effect of the 舆 path is such that the number of times the quantum unit 4 is generated by the photoelectric effect and corresponding to the light traveling from the top surface of the stacking portion 43 is increased, thereby increasing the luminance of the light-emitting diode. 10 I313520 " The one piece of the electrode 3 2 is arranged diagonally opposite to each other, wherein a piece of the electrode 32 is connected to the corner of the top surface of the bottom portion 411 of the first type of cladding layer 41' and the first type of cladding layer The 52-phase ohmic contact is connected to the corner of the top surface of the second-type cladding layer 43 and is in ohmic contact with the second-type resist layer 43, and the quantum unit 4 can be supplied with electric energy.
^當自該二片電極32施加電能時,電流分散流通過該量 ,單元4,而使該量子單元4以光電效應產生光子,進而使 該發光二極體3發光;該量子單元4產生的光,部分向第 :型批覆層43方向行進,並直接對應自平台33頂面(即 第一型批覆層43堆疊部431頂面)方向向外射出;部分向 第一型批覆層41方向行進的光,則在行進至該基材31的 反射層312日夺,被反射而轉向向上行進,並對應自平台μ 頂面方向向外射出;同時’對應自平纟33頂面(即第口二型 ,覆層43堆疊部431頂面)方向向外行進的光,因為該多 丈根光修正柱432與周遭空氣介f形成類似於波 =:=:果,使此等光遵循㈣反射折射原理在 此腔體與路徑中不斷地修正改變入射角與反射角,增加散 射的次數,進而相對實質提昇發光二極體的發光亮度。 :述本發明的高亮度發光二極體3的第一較 ’再經過以下的製造方法的說明後,當可更加清楚 〇 , 上述本發明的高亮度發光二極體;3的第一較 與氮化鎵系半導體^= 驟41 4在—晶格常數 V體材枓相匹配的蟲晶基板上蟲晶成長包含 11When electric energy is applied from the two electrodes 32, the current dispersion flows through the amount, unit 4, causing the quantum unit 4 to generate photons by photoelectric effect, thereby causing the light-emitting diode 3 to emit light; the quantum unit 4 generates The light partially travels toward the first type of cladding layer 43 and directly exits from the top surface of the platform 33 (ie, the top surface of the stacked portion 431 of the first type cladding layer 43); the portion is directed toward the first type of cladding layer 41. The light travels to the reflective layer 312 of the substrate 31, is reflected and turns upward, and is emitted outwardly from the top surface of the platform μ; and at the same time 'corresponds to the top surface of the flat surface 33 (ie, the first mouth) The second type, the top surface of the stacking portion 431 of the cladding layer 431, travels outward in the direction of the light, because the multi-rooted light-correcting column 432 forms a wave similar to the wave of the ambient air f:==:, so that the light follows the (four) reflection The principle of refraction continuously corrects the angle of incidence and the angle of reflection in the cavity and the path, increasing the number of times of scattering, and thereby substantially increasing the luminance of the light-emitting diode. The first comparison of the high-brightness light-emitting diode 3 of the present invention after the description of the following manufacturing method can be made clearer, the first comparison of the high-brightness light-emitting diode of the present invention; GaN-based semiconductor^=Step 41 4 on the lattice constant V body material 枓 matched on the insect crystal substrate, the growth of the worm crystal contains 11
,,"八印尔 y rfl復喟 口P 412、活性層 然後進行步43構成的平台33。 下钱刻移除-塊罙:為?樣利用黃光微影技術自中央區向 度為-人微米尺度的塊域,該第二型批覆 !313520 有第一型批覆層41、活性層42, ^ ^ . 及弟一型批覆層43的量 子早兀* 4,同時,選用具有高散埶 銘、銀等金屬或其合金、或是珍等所例如銅、金、 > 311, 夕專所構成的基板作為基底 等形成=:2具:^ 板上的量子單元心然 弟1批覆層41與基材31的苻舢爲 312相連接後移除磊晶基板,完成本步驟。 、曰 型批仃步驟42 ’選用銦錫氧化物(IT〇),在該第二 氧化:成ir形成一層韻刻保護層;本步驟是藉由銦錫 乳化物形成在第二型批覆声 M Μ Β 上,且在以預定蝕刻過程蝕 到及第一型批覆層43 合 被直接損傷的層體,以免、生2成保護該弟二型批覆層43 況,進而π 乂免3"成弟二型批覆層43 @漏電流狀 士上"進仃深度屬次微米尺度的蝕刻,而形成且有-大光電效應的結構, 形成具有取 然後進行步驟43,定義 電極區、—塊产…疋義°亥蝕刻保_面成-塊第- η 衣圍该第一電極區的中央區、一塊 區相間隔的第二雷搞F η 鬼與β亥中央 區的外環區。 …-塊環圍該中央區與第二電極 接著進行步驟44, 下韻刻移除—塊、、榘“I遍,自該外環區向 伯祖成 鬼度 第一型批覆層41上半部的媸祕, 部412、活性層42邀笛-J “一 —覆層41的延伸 12 1313520 層^上半部對應該中央區留存之結構即成多數根個別聲立 且南度屬於次微米尺度的光修正柱432。,, "Bazin y rfl 喟 mouth P 412, active layer Then proceed to the platform 33 formed by step 43. The money is removed - block 罙: for? Using the yellow lithography technology from the central region to the human-micron-scale block domain, the second type of coating! 313520 has the first type of cladding layer 41, the active layer 42, ^ ^ and the quantum of the first type of cladding layer 43 Early 兀* 4, at the same time, using a metal such as high-dispersion, silver or other alloys, or Jane, such as copper, gold, > 311, the base of the substrate is formed as a substrate, etc. =: 2: ^ The quantum unit on the board is connected to the substrate 31 and the germanium is connected to the substrate 31 to remove the epitaxial substrate. This step is completed. , 曰 type batching step 42 'select indium tin oxide (IT〇), in the second oxidation: into ir form a rhyme protective layer; this step is formed by indium tin emulsion in the second type of sound M Μ ,, and in the predetermined etching process etched and the first type of cladding layer 43 is directly damaged layer, so as to avoid the 2% protection of the second type of coating layer 43, and then π 乂 3 3 Type II batch coating 43 @Leakage current shape " 仃 仃 depth belongs to the sub-micron scale etching, and the structure formed and has a large photoelectric effect, formed with and then proceed to step 43, define the electrode area, block production...疋 ° 亥 蚀刻 _ _ 面 面 面 块 块 块 - η 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一The block is surrounded by the central zone and the second electrode, and then step 44 is performed. The lower part is removed, and the block is smashed, and the first half of the first type of cladding layer 41 is formed from the outer ring zone to the ancestors. The secret, the part 412, the active layer 42 invites the flute-J "one - the extension of the cladding 41 12 1313520 layer ^ the upper half corresponds to the structure retained in the central area, that is, the majority of the roots stand alone and the south belongs to the submicron scale Light correction column 432.
較佳地,本步驟45可應用例如離子餘刻技術、感應麵 合式電漿技術或感應離子技術的乾蝕刻方式,並通入氮氣 (n2)、氨氣(Ch4)、氩氡(Ar)、氯氣(〇1士氯化删( BC!3)、氟化碳(eh)、i化硫(沾6)等氣體及/或上述依 不同比例之混合氣體為餘刻氣體進行;或採用濕触刻方式 以氫氯酸(HC1)、硝酸(HN〇3)、氫氧化鉀(k〇h)、氯氧 化納(NaQH)、硫酸(h2S〇4)、碌酸(Η3ρ〇4)及/或上述 依不同比例之混合溶液進行;在此,是應用貯感應輕合 式電漿技術通入氣化硼進行。 接著進行步驟46,關如四氧化三鐵溶液、鹽酸、王 水’及/或_等IT0 _液洗除製得之光修正柱432上殘 留的蝕刻保護層結構。 …後再進行步驟47,移除對應該第一電極區所形成的 光修正柱432。 _最後進行步驟48,在該第—型批覆層41頂面對應該第 區的位置以及該第二型批覆層43對應該第一電極區 的位置上以導電材料分別形成二片電们2,並將半成品置 於充滿鈍ί±軋體或由純性氣體所組成之混合氣體氣氛下, 以刚C一〜800。〇/〇.5如11〜8〇11^進行金屬融合,即完成本 么月间冗度發光二極體3的第-較佳實施例的製作。 由上述說明可知,本發明高亮度發光二極體3之多數 先修正柱432,並非是簡單粗化量子單元4頂面而成的效果 13 1313520 ,而是必須以銦錫氧化物作為保護第二型彼覆層的保護層 體’避免第二型披覆層遭到直接的損傷而造成漏電流,同 時利用銦錫氧化物催化姓刻時的效果,最後才能自量子單 元4頂面(即第二型批覆層43 )深姓刻達次微米尺度,而 才能成型出光修正柱的結構,進而再配合週遭介質(空氣 )的折射係數差,方能形成類似於波導共振腔腔體與路徑 的效果’進而增加光行進時產生散射的次數,以提昇發光 一極體的發光亮度。 本發明高亮度發光二極體3之一第二較佳實施例,是 與上例相似,不同處僅在於本例所說明的高亮度發光二極 體3’更包含有一層以透明且可導電的材料,例如銦錫氧化 物(ιτο)形成在該量子單元4頂面的電流擴散層5,該電 流擴散層5可如圖5所示,蓋覆過該第二型批覆層43的光 修正柱432,使得頂面成平坦的平面,也可如圖6所示,對 應包覆每-光修正柱432與堆疊部431頂面,而成凹凸態 樣…:無_電机擴散層5的態樣如何,都可以使得當以電 極32施加電能時’電流水平橫向且均勻地擴散流通而使量 子單元4發光,進而提昇内部發光的量子效應。 參閱圖7’上述本發明高亮度發光二極體3,的第二較佳Preferably, in this step 45, a dry etching method such as ion remnant technique, inductive surface-matching plasma technique or inductive ion technique can be applied, and nitrogen (n2), ammonia (Ch4), argon-argon (Ar), Chlorine gas (〇 士 1 chlorination ( BC! 3), carbon fluoride (eh), i sulphur (dip 6) and other gases and / or the above mixed gas in different proportions for the residual gas; or wet contact Inscribed by hydrochloric acid (HC1), nitric acid (HN〇3), potassium hydroxide (k〇h), sodium oxychloride (NaQH), sulfuric acid (h2S〇4), sulphuric acid (Η3ρ〇4) and/or The above is carried out according to a mixed solution of different ratios; here, it is carried out by using a storage-inductive light-combined plasma technology to pass through the vaporized boron. Then proceeding to step 46, such as a ferroferric oxide solution, hydrochloric acid, aqua regia 'and/or _ Waiting for the IT0 _ liquid to remove the etched protective layer structure remaining on the light-correcting column 432. Then, proceeding to step 47, removing the light-correcting column 432 formed corresponding to the first electrode region. _ Finally, step 48 is performed. At a position where the top of the first type cladding layer 41 faces the first region and the second type of cladding layer 43 corresponds to the first electrode region The two pieces of electricity are respectively formed by the conductive material, and the semi-finished product is placed under a mixed gas atmosphere filled with a blunt or rolled body or a pure gas, just from C to 800. 〇/〇.5 such as 11~ 8〇11^ metal fusion, that is, the fabrication of the first preferred embodiment of the monthly light-emitting diode 3. The above description shows that most of the high-brightness LEDs of the present invention are modified first. 432, is not the effect of simply roughening the top surface of the quantum unit 4 13 1313520, but must use indium tin oxide as a protective layer to protect the second type of coating. 'Avoid the second type of coating is directly The damage caused by the leakage current, while using the indium tin oxide to catalyze the effect of the surname, and finally from the top surface of the quantum unit 4 (ie, the second type of cladding layer 43) deep surnamed sub-micron scale, in order to form a light correction The structure of the column, and then the difference in refractive index of the surrounding medium (air), can form an effect similar to that of the waveguide cavity and the path of the waveguide, thereby increasing the number of times of scattering caused by the light traveling to enhance the illumination of the light-emitting body. Brightness. The invention is high The second preferred embodiment of the light-emitting diode 3 is similar to the above example, except that the high-brightness light-emitting diode 3' described in this example further comprises a transparent and electrically conductive material. For example, indium tin oxide (ιτο) forms a current diffusion layer 5 on the top surface of the quantum unit 4, and the current diffusion layer 5 can cover the light correction column 432 of the second type cladding layer 43 as shown in FIG. The plane of the top surface is flat, as shown in FIG. 6, correspondingly covering the top surface of each of the light-correcting column 432 and the stacking portion 431, and forming an uneven pattern...: What is the state of the motor diffusion layer 5? It is possible to cause the current level to diffuse laterally and uniformly when the electric energy is applied by the electrode 32 to cause the quantum unit 4 to emit light, thereby enhancing the quantum effect of internal luminescence. Referring to Figure 7', the second preferred embodiment of the high-intensity light-emitting diode 3 of the present invention described above
境下’通入含氧之混合氣氛, y鄉艰玖兩片電極32之 \1〇_3毫米汞柱的真空壓力環 以透明且可導電的材料在該 14 1313520 量子單元 頂面形成該電流擴散層5後,並在鈍性氣體或 加鈍I·生乳體所組成的混合氣氣氛下之高溫擴散爐或快速升 ^、盧進仃透明導電層表面晶粒改質,即製得第二較佳實 轭例中所說明的高亮度發光二極體。 、π综上所述,本發明主要是提出利用導電金屬氧化物作 :、"餘χ丨第一型批覆層的保護層體,以強固第二型披覆層 格結構’冑而可使第二型批覆層被蝕刻成型出高度屬 次,米尺度(亦即必須向下蝕刻深度必須至次微米尺度) 的夕數光修正柱’藉由此等光修正柱與週遭例如空氣或是 銦錫氧化物等介質的折射係數差,形成類似於波導共振腔 腔體與路偟的效果’進而可以將元件自平台頂端向外射出 多方向放射的光,遵循菲涅耳反射折射原理不斷地修正改 變入射角與反射角,以增加產生散射的次數,以提昇發光 二極體的發光亮度,確實較習知發光二極體而言提昇整體 的發光亮度,達到本發明的創作目的。 1·隹以上所述者,僅為本發明之較佳實施例而已,當不 能以此限定本發明實施之範圍,即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾,皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖視示意圖,說明習知的發光二極體; 圖2是一剖視示意圖,說明本發明高亮度發光二極體 之一第一較佳實施例; 圖3疋一局部放大圖,說明圖2高亮度發光二極體之 15 1313520 多數光修正柱修正光的行進方向; 圖4疋'一流程圖,却㈤ D兒月圖2高亮度發光二極體 較佳實施例的製造方法; <弟— 圖5是一剖視示意圖 咕^ 说明本發明高亮度發光二極體 之一第二較佳實施例,並說明— 倥體 的態樣; 冑散“層的頂面成平面 圖6是一剖視示意圖,說明本發明高 之-第二較佳實施例’並說明-擴散電流層的 態樣;及 的頂面成凹凸 較佳實施例的製造方法 圖7是一流程圖,說明本發 ^ “一造方法。月㈣度發光二極體之第 16 1313520 【主要元件符號說明】 3、3, 發光二極體 432 光修正柱 31 基材 5 電流擴散層 311 基底層 61 步驟 312 反射層 62 步驟 32 電極 63 步驟 33 平台 64 步驟 4 量子單元 65 步驟 41 第一型批覆層 66 步驟 411 底部 67 步驟 412 延伸部 68 步驟 42 活性層 7 步驟 43 第二型批覆層 431 堆疊部 17Under the environment of 'mixing oxygen-containing atmosphere, y xiang 玖 two electrodes 32 \ 1 〇 _ 3 mm Hg vacuum pressure ring in the transparent and conductive material to form the current on the top surface of the 14 1313520 quantum unit After the diffusion layer 5, and in the mixed gas atmosphere composed of a passive gas or a blunt I·raw emulsion, the surface of the high-temperature diffusion furnace or the rapid rise and the surface of the transparent conductive layer of Lujin仃 is modified to obtain the second The high-intensity light-emitting diode described in the preferred embodiment is preferably a yoke. In summary, the present invention mainly proposes to use a conductive metal oxide as the protective layer of the first type of cladding layer of the "Ember" to strengthen the second type of cladding layer structure. The second type of cladding layer is etched to form a height-averaged, millimeter-light correction column of the meter scale (that is, the depth must be etched down to the sub-micron scale) to thereby correct the column and surrounding such as air or indium. The difference in refractive index of the medium such as tin oxide forms a similar effect to the cavity and the path of the waveguide resonator. Further, the element can emit light emitted from multiple directions in the direction from the top of the platform, and is continuously corrected according to the principle of Fresnel reflection and refraction. The incident angle and the reflection angle are changed to increase the number of times of scattering to increase the luminance of the light-emitting diode, and the overall luminance of the light is actually improved compared with the conventional light-emitting diode, thereby achieving the creative object of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change of the patent application scope and the description of the invention is Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional light emitting diode; FIG. 2 is a cross-sectional view showing a first preferred embodiment of the high brightness light emitting diode of the present invention; 3 疋 a partial enlarged view, illustrating the high-intensity light-emitting diode of Figure 15 13 1313520 Most light-correcting column corrects the direction of light travel; Figure 4 疋 'a flow chart, but (5) D-month Figure 2 high-brightness light-emitting diode The manufacturing method of the preferred embodiment; <different> FIG. 5 is a cross-sectional view showing a second preferred embodiment of the high-intensity light-emitting diode of the present invention, and illustrating the aspect of the body; "The top surface of the layer is a plan view 6 which is a schematic cross-sectional view showing the high-second preferred embodiment of the present invention and illustrates the state of the diffusion current layer; and the manufacturing method of the top surface is formed into a concave-convex preferred embodiment. Figure 7 is a flow chart illustrating the method of the present invention. 16th 1313520 of the monthly (fourth) light-emitting diode [Description of main components] 3, 3, LED 432 Optical correction column 31 Substrate 5 Current diffusion layer 311 Base layer 61 Step 312 Reflective layer 62 Step 32 Electrode 63 Step 33 Platform 64 Step 4 Quantum unit 65 Step 41 First type cladding layer 66 Step 411 bottom 67 Step 412 Extension 68 Step 42 Active layer 7 Step 43 Second type cladding layer 431 Stacking section 17
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