TWI313520B - - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state light-emitting element and a method of manufacturing the same, and in particular to a high-luminance light-emitting diode and a method of manufacturing the same. [Prior Art] The light-emitting body has the advantages of long life, power saving, small volume, low driving voltage, and the like, and is one of the new generation of artificial light sources. Referring to FIG. 1, in general, a light-emitting diode includes a rectangular plate-shaped substrate U, and a layer of quantum germanium 2 formed on the substrate n by a gallium nitride-based semiconductor material is formed on the substrate The current diffusion layer 12' on the top surface of the quantum unit 2 and two electrodes 13 for supplying electrical energy. The bulk substrate 11 is generally composed of a material having a lattice constant matching the quantum unit 2, such as sapphire. The quantum unit 2 has a first type of cladding layer 21 (n_cladding) including a bottom portion 211 connected to the substrate u and an extending portion 212 protruding upward from a central portion of the bottom portion 211. a layer of active iayer formed from the top surface of the extension portion 212 of the first type of cladding layer 21, and a second layer of p-cladding layer formed from the top surface of the active layer 22 The first and second type cladding layers 21, 23 form a quantum energy barrier with respect to the active layer 22 to generate light by a photoelectric effect. The current diffusion layer 12 is made of a material that can transmit light and can uniformly disperse current, such as indium tin. An oxide (known in the industry as IT) is formed from the top surface of the second type of cladding layer U, so that when the electrode 12 is applied with electric energy, the current level 131352 is uniformly diffused laterally and then vertically through the first type of cladding layer. 2i, the active layer 22, the second type of cladding layer 23, thereby enhancing the quantum effect of internal light emission. The extension portion 212 of the first type of cladding layer 21, the active layer 22, the second type of cladding layer 23 and the current diffusion layer 12 are formed. For internally generated light The platform 14 is generally referred to as the platform 14 in the industry. The two electrodes 13 are formed in a sheet shape by a metal such as copper or silver and/or an alloy thereof, and one electrode 13 is disposed in the quantum unit 2 The corner of the top surface of the bottom portion 211 of the first type of coating layer 21, and the other electrode 13 is disposed on the current diffusion layer 12 diagonally to the electrode 13 provided at the corner of the bottom portion 211 of the first type cladding layer 21 of the quantum unit 2. The two electrodes 13 are in ohmic contact with the first type of cladding layer 21 and the current diffusion layer 12, respectively, and the quantum unit 12 can be supplied with electric energy to generate light. From the two electrodes 13 When electric energy is applied, the current is dispersed horizontally and horizontally through the current diffusion layer 12, and then vertically passes through the first type of cladding layer 21, the active layer 22, and the second type of cladding layer 23, so that the quantum unit 2 is generated by photoelectric effect. Photons, the photons generated are mostly extended from the first type of cladding layer 21. The rectangular parallelepiped formed by the P 212, the active layer 22, the second type cladding layer 23 and the current diffusion layer 24 are emitted from the top of the 14 (mesa) top surface, And causing the light emitting diode 1 to emit light outward The platform ΐ4 (η·) formed by the extension 212 of the first type cladding layer 21, the active layer 22, the second type resist layer 23 and the current diffusion layer 24 is topped from t, and the horizontal boundary Φ′ is thus the quantum “When the top of the light platform 14 produced by the photoelectric effect of 2卩 is emitted outward, it is limited by the law of Snell (6 1313520).

Snell's Law) and only part of the light can be smoothly emitted from the top to the outside, so that the single light-emitting diode 1 as a whole has the disadvantage of insufficient brightness. Therefore, a number of technical documents have proposed to roughen the top surface of the platform 14, thereby increasing the ratio of the light passing through the platform 14 generated by the photoelectric effect of the quantum unit 2, and increasing the luminance of the overall light-emitting diode 1; However, as a whole, how to effectively change the change of the light-emitting angle of the component and improve the luminance of the overall light-emitting diode is still one of the focuses of the industry. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a high-intensity light-emitting diode that emits light uniformly and concentrated. Further, another object of the present invention is to provide a method of manufacturing a high-intensity light-emitting diode which emits light uniformly and concentrated. In the present invention, the high-intensity light-emitting diode of the present invention comprises a plate-shaped substrate, a quantum unit, and two electrodes. The layer of quantum cells ' is connected to the substrate and has a layer comprising one and . a bottom portion of the base of the base material and a first type of coating layer extending upward from a central portion of the bottom portion, an active layer formed from the top surface of the extension portion of the first type of cladding layer, and a layer a first type of cladding layer formed from a top surface of the active layer, wherein the first and second type cladding layers form a quantum energy barrier with respect to the active layer to generate light by a photoelectric effect. The second type of cladding layer comprises a layer and the active layer a stacked portion of the layer connection, and a plurality of light-correcting columns integrally protruding upward from the top surface of the stacking portion and having a twist of submicron scale, the difference in refractive index between the plurality of light-correcting columns and the surrounding medium causes the quantum unit to have a photoelectric effect The number of generations of 1313520 corresponding to the light emitted from the top of the stacking portion is increased, thereby substantially increasing the luminance of the light emitting diode.忒 one electrode is respectively disposed on a top surface of the bottom of the first type of cladding layer and a top surface of the second type of cladding layer stacking portion, and is in ohmic contact with the first and second type cladding layers respectively The quantum unit provides electrical energy. Furthermore, the method for manufacturing a high-intensity light-emitting diode includes the following steps

First, a layer of the coating layer, an active layer, and a first and second type of coating layer are used to illuminate the active layer on a plate-shaped substrate. The semiconductor material sequentially forms a first layer of the second type of cladding layer, and the first quantum energy barrier is formed by photoelectric effect. Then, indium tin oxide is selected to form an etching protection layer on the top surface of the second cladding layer.

Then defining a top surface of the etch protection layer into a first electrode region, a central region surrounding the first electrode region, and a first-electrode "-and-block ring_central region and a portion spaced apart from the central region" The outer ring region of the two electrode region. And then removing the block from the outer ring of the quantum unit to the block depth to the upper half of the first type of cladding layer, so that the composition corresponding to the central area of the towel is reserved for the internal photoelectric effect. a platform that emits light outward; And 'removing a block of sub-micron-scale from the central region of the quantum cell' to make the structure of the upper half of the second-type cladding layer remain in the central region and the plurality of roots stand alone and can be surrounded An optical correction column in which the medium cooperates to change the direction of travel of light. The light correction column formed corresponding to the first electrode region is then removed. 8 1313520 The top of the first type of cladding layer faces the position of the second electrode region, and the first electrode layer corresponding to the first type of coating layer is placed on the first electrode region to form two electrodes, respectively. The high brightness light emitting diode. The utility model has the advantages that the indium tin oxide is formed to make the second type of coating material _ depth up to the micron-scale (four) protective layer, and a complete matching process is proposed, thereby forming a predetermined area in the second type coating layer. Forming a light correction of a plurality of root heights on a sub-micron scale (4), so that the obtained light-emitting diodes increase the number of times the light is scattered by the cooperation of the light-correcting column and the surrounding medium, so as to be relatively real f The brightness of the polar body itself. [Embodiment] The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 2 and FIG. 3, a first preferred embodiment of the high-brightness light-emitting diode 3 of the present invention comprises a rectangular plate-shaped substrate 31 and a quantum unit bonded to the substrate 31. 4, and two electrodes 32 for supplying electrical energy. The shoulder block substrate 31 has a base layer 311 and a reflective layer 312 formed on the base layer 311. The base layer 311 is, for example, a material having a high heat dissipation rate, such as a metal such as copper, gold, aluminum, or silver. The alloy, or tantalum, is formed, and the internal heat generated by the element is guided away from the element itself. The I3i352〇 reflective layer 312 is formed on the base layer 311 by a material having a high refractive index, such as silver m. It can reflect light. Of course, the block substrate η can also be simply composed of a material whose lattice constant matches the quantum single & 4, = sapphire, and which is easy to grow and high quality quantum unit 4 is poisonous.

The quantum unit 4 is formed of a gallium nitride-based semiconductor material, and has a layer including a bottom portion 411 connected to the substrate 31 and a first portion 412 extending upward from the central portion of the bottom portion 411. a type of overcoat layer ^: - an active layer 42 formed from the top surface of the extension portion 412 of the first type of cladding layer 41, and a second type of cladding layer 43 formed from the top surface of the active layer 42. The first and second type cladding layers 41, 43 form a quantum energy barrier with respect to the active layer 42 and can generate light by a photoelectric effect. The extension portion 412 of the first type of cladding layer 41, the active layer 42 and the second type of cladding layer 43 form a platform 33 (i.e., mesa generally known in the art) for internally generated light to be emitted outward. The second type of cladding layer 43 includes a stacking portion 431 connected to the active layer 42 and a plurality of light corrections which are integrally protruded upward from the top surface of the stacking portion 431 and have a height on the submicron scale (about 1000A to 5000A). Column 432, two of the plurality of light-correcting columns 432 are formed by deep etching (the manufacturing method is to be continued later), and the refractive index difference with the surrounding medium (in this case, air) is similar to that of the waveguide resonant cavity. The effect of the 舆 path is such that the number of times the quantum unit 4 is generated by the photoelectric effect and corresponding to the light traveling from the top surface of the stacking portion 43 is increased, thereby increasing the luminance of the light-emitting diode. 10 I313520 " The one piece of the electrode 3 2 is arranged diagonally opposite to each other, wherein a piece of the electrode 32 is connected to the corner of the top surface of the bottom portion 411 of the first type of cladding layer 41' and the first type of cladding layer The 52-phase ohmic contact is connected to the corner of the top surface of the second-type cladding layer 43 and is in ohmic contact with the second-type resist layer 43, and the quantum unit 4 can be supplied with electric energy.

When electric energy is applied from the two electrodes 32, the current dispersion flows through the amount, unit 4, causing the quantum unit 4 to generate photons by photoelectric effect, thereby causing the light-emitting diode 3 to emit light; the quantum unit 4 generates The light partially travels toward the first type of cladding layer 43 and directly exits from the top surface of the platform 33 (ie, the top surface of the stacked portion 431 of the first type cladding layer 43); the portion is directed toward the first type of cladding layer 41. The light travels to the reflective layer 312 of the substrate 31, is reflected and turns upward, and is emitted outwardly from the top surface of the platform μ; and at the same time 'corresponds to the top surface of the flat surface 33 (ie, the first mouth) The second type, the top surface of the stacking portion 431 of the cladding layer 431, travels outward in the direction of the light, because the multi-rooted light-correcting column 432 forms a wave similar to the wave of the ambient air f:==:, so that the light follows the (four) reflection The principle of refraction continuously corrects the angle of incidence and the angle of reflection in the cavity and the path, increasing the number of times of scattering, and thereby substantially increasing the luminance of the light-emitting diode. The first comparison of the high-brightness light-emitting diode 3 of the present invention after the description of the following manufacturing method can be made clearer, the first comparison of the high-brightness light-emitting diode of the present invention; GaN-based semiconductor^=Step 41 4 on the lattice constant V body material 枓 matched on the insect crystal substrate, the growth of the worm crystal contains 11

,, "Bazin y rfl 喟 mouth P 412, active layer Then proceed to the platform 33 formed by step 43. The money is removed - block 罙: for? Using the yellow lithography technology from the central region to the human-micron-scale block domain, the second type of coating! 313520 has the first type of cladding layer 41, the active layer 42, ^ ^ and the quantum of the first type of cladding layer 43 Early 兀* 4, at the same time, using a metal such as high-dispersion, silver or other alloys, or Jane, such as copper, gold, > 311, the base of the substrate is formed as a substrate, etc. =: 2: ^ The quantum unit on the board is connected to the substrate 31 and the germanium is connected to the substrate 31 to remove the epitaxial substrate. This step is completed. , 曰 type batching step 42 'select indium tin oxide (IT〇), in the second oxidation: into ir form a rhyme protective layer; this step is formed by indium tin emulsion in the second type of sound M Μ ,, and in the predetermined etching process etched and the first type of cladding layer 43 is directly damaged layer, so as to avoid the 2% protection of the second type of coating layer 43, and then π 乂 3 3 Type II batch coating 43 @Leakage current shape " 仃 仃 depth belongs to the sub-micron scale etching, and the structure formed and has a large photoelectric effect, formed with and then proceed to step 43, define the electrode area, block production...疋 ° 亥 蚀刻 _ _ 面 面 面 块 块 块 - η 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一The block is surrounded by the central zone and the second electrode, and then step 44 is performed. The lower part is removed, and the block is smashed, and the first half of the first type of cladding layer 41 is formed from the outer ring zone to the ancestors. The secret, the part 412, the active layer 42 invites the flute-J "one - the extension of the cladding 41 12 1313520 layer ^ the upper half corresponds to the structure retained in the central area, that is, the majority of the roots stand alone and the south belongs to the submicron scale Light correction column 432.

Preferably, in this step 45, a dry etching method such as ion remnant technique, inductive surface-matching plasma technique or inductive ion technique can be applied, and nitrogen (n2), ammonia (Ch4), argon-argon (Ar), Chlorine gas (〇 士 1 chlorination ( BC! 3), carbon fluoride (eh), i sulphur (dip 6) and other gases and / or the above mixed gas in different proportions for the residual gas; or wet contact Inscribed by hydrochloric acid (HC1), nitric acid (HN〇3), potassium hydroxide (k〇h), sodium oxychloride (NaQH), sulfuric acid (h2S〇4), sulphuric acid (Η3ρ〇4) and/or The above is carried out according to a mixed solution of different ratios; here, it is carried out by using a storage-inductive light-combined plasma technology to pass through the vaporized boron. Then proceeding to step 46, such as a ferroferric oxide solution, hydrochloric acid, aqua regia 'and/or _ Waiting for the IT0 _ liquid to remove the etched protective layer structure remaining on the light-correcting column 432. Then, proceeding to step 47, removing the light-correcting column 432 formed corresponding to the first electrode region. _ Finally, step 48 is performed. At a position where the top of the first type cladding layer 41 faces the first region and the second type of cladding layer 43 corresponds to the first electrode region The two pieces of electricity are respectively formed by the conductive material, and the semi-finished product is placed under a mixed gas atmosphere filled with a blunt or rolled body or a pure gas, just from C to 800. 〇/〇.5 such as 11~ 8〇11^ metal fusion, that is, the fabrication of the first preferred embodiment of the monthly light-emitting diode 3. The above description shows that most of the high-brightness LEDs of the present invention are modified first. 432, is not the effect of simply roughening the top surface of the quantum unit 4 13 1313520, but must use indium tin oxide as a protective layer to protect the second type of coating. 'Avoid the second type of coating is directly The damage caused by the leakage current, while using the indium tin oxide to catalyze the effect of the surname, and finally from the top surface of the quantum unit 4 (ie, the second type of cladding layer 43) deep surnamed sub-micron scale, in order to form a light correction The structure of the column, and then the difference in refractive index of the surrounding medium (air), can form an effect similar to that of the waveguide cavity and the path of the waveguide, thereby increasing the number of times of scattering caused by the light traveling to enhance the illumination of the light-emitting body. Brightness. The invention is high The second preferred embodiment of the light-emitting diode 3 is similar to the above example, except that the high-brightness light-emitting diode 3' described in this example further comprises a transparent and electrically conductive material. For example, indium tin oxide (ιτο) forms a current diffusion layer 5 on the top surface of the quantum unit 4, and the current diffusion layer 5 can cover the light correction column 432 of the second type cladding layer 43 as shown in FIG. The plane of the top surface is flat, as shown in FIG. 6, correspondingly covering the top surface of each of the light-correcting column 432 and the stacking portion 431, and forming an uneven pattern...: What is the state of the motor diffusion layer 5? It is possible to cause the current level to diffuse laterally and uniformly when the electric energy is applied by the electrode 32 to cause the quantum unit 4 to emit light, thereby enhancing the quantum effect of internal luminescence. Referring to Figure 7', the second preferred embodiment of the high-intensity light-emitting diode 3 of the present invention described above

Under the environment of 'mixing oxygen-containing atmosphere, y xiang 玖 two electrodes 32 \ 1 〇 _ 3 mm Hg vacuum pressure ring in the transparent and conductive material to form the current on the top surface of the 14 1313520 quantum unit After the diffusion layer 5, and in the mixed gas atmosphere composed of a passive gas or a blunt I·raw emulsion, the surface of the high-temperature diffusion furnace or the rapid rise and the surface of the transparent conductive layer of Lujin仃 is modified to obtain the second The high-intensity light-emitting diode described in the preferred embodiment is preferably a yoke. In summary, the present invention mainly proposes to use a conductive metal oxide as the protective layer of the first type of cladding layer of the "Ember" to strengthen the second type of cladding layer structure. The second type of cladding layer is etched to form a height-averaged, millimeter-light correction column of the meter scale (that is, the depth must be etched down to the sub-micron scale) to thereby correct the column and surrounding such as air or indium. The difference in refractive index of the medium such as tin oxide forms a similar effect to the cavity and the path of the waveguide resonator. Further, the element can emit light emitted from multiple directions in the direction from the top of the platform, and is continuously corrected according to the principle of Fresnel reflection and refraction. The incident angle and the reflection angle are changed to increase the number of times of scattering to increase the luminance of the light-emitting diode, and the overall luminance of the light is actually improved compared with the conventional light-emitting diode, thereby achieving the creative object of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change of the patent application scope and the description of the invention is Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional light emitting diode; FIG. 2 is a cross-sectional view showing a first preferred embodiment of the high brightness light emitting diode of the present invention; 3 疋 a partial enlarged view, illustrating the high-intensity light-emitting diode of Figure 15 13 1313520 Most light-correcting column corrects the direction of light travel; Figure 4 疋 'a flow chart, but (5) D-month Figure 2 high-brightness light-emitting diode The manufacturing method of the preferred embodiment; <different> FIG. 5 is a cross-sectional view showing a second preferred embodiment of the high-intensity light-emitting diode of the present invention, and illustrating the aspect of the body; "The top surface of the layer is a plan view 6 which is a schematic cross-sectional view showing the high-second preferred embodiment of the present invention and illustrates the state of the diffusion current layer; and the manufacturing method of the top surface is formed into a concave-convex preferred embodiment. Figure 7 is a flow chart illustrating the method of the present invention. 16th 1313520 of the monthly (fourth) light-emitting diode [Description of main components] 3, 3, LED 432 Optical correction column 31 Substrate 5 Current diffusion layer 311 Base layer 61 Step 312 Reflective layer 62 Step 32 Electrode 63 Step 33 Platform 64 Step 4 Quantum unit 65 Step 41 First type cladding layer 66 Step 411 bottom 67 Step 412 Extension 68 Step 42 Active layer 7 Step 43 Second type cladding layer 431 Stacking section 17

Claims (1)

1313520 X. Patent application scope: i A high-brightness light-emitting diode comprising: a plate-shaped substrate; a quantum unit 'connected to the substrate and having a layer comprising a bottom connected to the substrate and a self a first type of a portion of the bottom portion of the bottom portion of the bottom portion, an active layer formed from the top surface of the extension portion of the first type of cladding layer, and a layer formed from the top surface of the active layer a second type of cladding layer, the first and second type cladding layers form a quantum energy barrier with respect to the active layer to generate light by a photoelectric effect, and the second type of cladding layer comprises a stacking portion connected to the active layer, and a majority A light-correcting column that protrudes upward from the top surface of the stack and has a height between the sub-micron scales, and a difference in refractive index between the plurality of light-correcting columns and the surrounding medium causes the quantum element to be generated by the photoelectric effect and corresponds to the stacking portion. The number of times the light emitted from the top surface is increased by scattering; and 2. 3. 4. Two 4 poles respectively disposed on the top surface of the bottom of the first type of cladding layer and the top of the second type of cladding layer stacking portion On, respectively, and the first - and may provide power to the quantum unit type cladding layer in ohmic contact with. The high-brightness light-emitting diode according to claim 1, wherein the substrate has a base layer, and the layer is formed of a material having a high refractive index material and connected to a top surface of the base layer. . The high-intensity light-emitting diode described in the second aspect of the patent range is also tr, and the second layer is formed of a transparent and electrically conductive material to form a current diffusion layer on the second. According to the high-brightness light-emitting diode 18 131352 所述 described in the third paragraph of the patent application, the top surface of the current diffusion layer is a plane. 5. The high-brightness light-emitting diode according to claim 4, wherein the current diffusion layer is in a concave-convex manner corresponding to the plurality of light-correcting columns. A method for manufacturing a high-brightness light-emitting diode, comprising: (a) sequentially forming a first type of cladding layer, an active layer, and a second type of cladding layer on a plate-shaped substrate by using a semiconductor material in sequence; And the first and second type of cladding layers form a quantum energy barrier with respect to the active layer to generate light by photoelectric effect; (b) using indium tin oxide to form an etching protection layer on the top surface of the second type of cladding layer; (c) defining a top surface of the etch protection layer as a first electrode region, a core region surrounding the first electrode region, a second electrode region spaced from the central region, and a ring surrounding the central region and The outer ring region of the second electrode region; (d) etching away from the outer ring region of the °Hili subunit to remove a block depth to the upper half of the :Hai-type batch coating, so that the corresponding region: The retained structure constitutes a platform for externally emitting light generated by the photoelectric effect; 中央 I central portion of the subunit is etched down to remove - the block depth is a human micrometer-scale block domain, and the second type is overwritten The upper half of the layer should be. The structure retained in the central region of the sinus is a light-repaired 19A313520 (1) removing the light-correcting column formed by the first electrode region; and (g) Forming two electrodes with conductive materials at positions where the top of the first type of cladding layer faces the second electrode region and the second type of cladding layer corresponds to the first electrode region, and the high brightness light emitting diode is obtained. body. = The method for manufacturing a high-brightness light-emitting diode according to item 6 of the patent application, wherein the step (where the inductively coupled plasma technology is carried out by the arsenic boron). The method for the high-brightness light-emitting diode according to the seventh item is further included in the step (h), and is a structure for removing the etching protective layer remaining on the plurality of light-correcting columns obtained by the step (e). . . . According to the application of the high-intensity light-emitting diode according to item 8 of the patent application scope:: Π includes - step.), in which a majority of light 2 is formed and expanded. On the coating layer, a transparent and electrically conductive material is formed to form a high-brightness light-emitting triode according to item 9 of the patent application (7); wherein the step (1) is not greater than (four) 3 The millimeter fruit column is carried out under the atmosphere of a person's oxygen-containing atmosphere.