TWI311168B - Method for manufacturing silicon monocrystal - Google Patents

Description

1311168 发明, invention description: [Technical field to which the invention pertains] The present invention relates to a method for controlling a stone singular crystal rod which is pulled up by the czoch-raski methed method by a PID control method (temperature control method) A method for producing a single crystal product of a diameter. [Prior Art] In the past, a method for controlling the pulling speed of the singular single crystal has been known, for example, in the pulling of a single crystal rod, and the deviation of the diameter is directly fed back to the single crystal rod. The first method of pulling the crystal speed and the second method of directly feeding back the above-described diameter deviation to the heater temperature. In recent years, with the high integration of semiconductor components, the design rule has been further refined, so that the micro defects on the wafer of the material greatly affect the yield of the device. Therefore, when the wafer is manufactured by orthogonal (right-angle) plane cutting along the axis of the single crystal rod of the pulling, it is necessary to manufacture a wafer with a fine defect-free crystal. For this purpose, the temperature gradient in the axial direction near the solid-liquid interface at the time of pulling the single crystal rod is G (°C / mm), and the pulling speed is V (mm/min), and the pulling speed is required. The whole process is set to a certain V/G and controlled to the set pulling speed. When the V/G is maintained for a certain period of time, since the top temperature gradient G at the initial stage of pulling of the single crystal rod is large, the temperature gradient from the top to the predetermined pulling position becomes small, so the pulling speed is set in accordance with the change of the temperature gradient G, usually It is necessary to set the lifting speed of the top to be faster, and to slow down to the pulling speed of the predetermined pulling position. However, the difference in the pulling speed of such a setting will directly become the actual increase of 1311168 =, and therefore, according to the first method described above, the controllability of the top is improved, and the diameter variation other than = is increased, and it is desired to increase the The controllability has the problem of an increase in the diameter of the top. & The second method described above, because the control range of the heater and the change time of the liquid: degree will become difficult with the positional relationship between the liquid surface and the heater or the liquefaction, so that even the control of the degree is difficult, sometimes even This will cause the actual direction of the pulling (drawing) speed to change to the direction of the heater's correction, which will increase the diameter variation. - In order to solve the problem of k2, in the Japanese special open U(6) nickname bulletin, the control value of the lifting speed of the Shixi single knot crowbar is revealed, and the pulling speed and the control value are adjusted for the lifting speed. (span __, and before the amplitude adjustment of the control value of the lifting speed of the hai operation, the comparison between the lifting speed control and the set pulling speed is performed, and the correction of the heater temperature is calculated to obtain the heater temperature setting. The method for producing a single crystal which is characterized by controlling the diameter of the single crystal rod by the output. The method for producing the single crystal of the stone disclosed in the above publication is because the amplitude of the control value of the pulling speed is adjusted. Comparing the pulling speed control value and the set pulling speed and feeding the deviation back to the heater temperature, the correction amount of the t-heater temperature cannot follow the deviation of the actual pulling speed and the diameter variation of the single crystal rod increases. The problem is that the purpose of this = Ming is to provide - the type of pull-up speed of the Shixi single crystal rod can be regarded as - set V / G 'According to this set pull speed to accurately control the actual pull speed Therefore, a method for producing a single crystal which is characterized by variation in the diameter of a single crystal rod is suppressed. 1311168 Another object of the present invention is that the medium is very large, p J_ , which is such that the seed can be predicted during the pulling of the single crystal rod. The occurrence of a bad department, borrowed & D. 1 dangerous fine 乜 疋楗 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 The invention relates to a method for producing cerium soap crystals characterized by the invention. The invention of claim i is as shown in Figs. 1 and 2, which is a liquid crystal 13 which is melted by the heater 17 and is pulled by a single crystal rod 24 Detecting, according to the determined time interval, the diameter change of the single crystal rod 24 in the pulling, 'feeding the detection value to the pulling speed of the stone single crystal rod 24, and the temperature of the heater 17, thereby The invention relates to an improvement of the method for manufacturing a single crystal of the diameter of the single crystal rod 24. The characteristic of the composition includes: a method for controlling the pulling speed of the stone single crystal rod 24 whose diameter reaches the target value by the stomach; Control the temperature of the heater 17 to make the dream single crystal rod straight' a heater temperature control method to a private value; and a pm control adapted to change the PID constant at a plurality of stages of the methods. The manufacturing method of the stone single crystal according to the item i of the patent application is: When pulling the top/head of the rod 24 (t〇p/head), the pulling speed is set to be fast (high), and the diameter variation also tends to become larger. In order to stabilize the diameter of the top at the beginning, the PID is borrowed. The PID constant of the control is set to be large to increase the correction amount of the pulling speed of the diameter deviation of the single crystal rod 24, thereby preferentially controlling the diameter control of the single crystal rod 24. Further, the single crystal rod 24 is When pulling at the top (ie, the bottom of the straight body), the pulling speed is set to be slower (lower) than the top, and the diameter variation also tends to become smaller. Therefore, the PID constant of the PID control is set in response to the setting of the pulling speed. The stage becomes smaller, so as to reduce the correction amount of the pulling speed of the diameter deviation of the shoal 1311168 early, and σ day bar 24, the lifting of the 4 + line control financial crystal rod 24, two: " PID (four) of the priority phase ^ control of the pull speed. Here, "plural worker 1" as described above means the change of the PID constant stage of the PID control. ^The number of inventions in which Baifeng has applied for the second paragraph of the patent scope is: Wei Yushi Shixing Xingshe a Zhiyue is as shown in Figures 1 and 2, the lifting speed of the early crystallization rod 24 makes its diameter In the PID control method that achieves the target value, the method of directly returning the deviation of the target diameter and the measured diameter of the target diameter of the 吉 早 έ 曰 泸偬 吉 吉 吉 吉 及 及 及 及 及 及 及 及 及 及 24 24 24 24 24 24 24 24趄里1 f马 is characterized by a combination of the < The manufacturing method of the crystallization of the material described in the 曰 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 Rod 2 is also used as the reference for the diameter deviation, and ^ Α target diameter and measured diameter of the measured direct and the M crystal rod target straight pinch and speed sound, heart: ^ amount as a deviation 'correction before the lifting rod two Lifting of the ^-/卩(4) part (4) occurs when the pulling speed of the W single crystal release 24 occurs. The invention of the item is 'as shown in Figures 1 and 2, the variation is the deviation of the diameter deviation between the target diameter and the measured diameter. (4) When the pulling speed of the single crystal rod 24 is cut, the upper speed f is added to the PiD. Control so that it does not exceed the change in the General Assembly's corrections to the current lifting speed. The method of manufacturing the stone singular crystals recorded in the third item of a habitat 24, in the case of the Shi Xidan-曰 % % , , 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 以前 : : : : : : : : : : The direct change of the straightness & Then, the correction is limited by the maximum fluctuation range, so that the variation of the pulling speed of the single crystal rod 24 can be suppressed to a minimum. The invention of claim 4 is based on the inventions of the first to third aspects, and is further described by the third to fifth and eleventh figures, when the pulling of the single crystal rod 24 is performed, the pulling is started until the predetermined time. The pulling speed measurement profile (profile) and the lifting speed from the start of the lifting to the end of the lifting, and the quality prediction operation of the single crystal rod in parallel; when it is predicted that the defective portion of the single crystal rod 24 occurs, The correction pulling speed and the corrected heater temperature of the single crystal rod 24 required by the correction correction unit are characterized by the correction of the pulling speed and the correction of the heater temperature to the set pulling speed and the setting of the heater temperature. According to the manufacturing method of the single crystal according to the fourth item, when the single crystal rod 24 is pulled, the diameter is maintained, and even if the measured pulling speed exceeds the set pulling speed, the pulling is performed. The actual performance of the speed and the setting of the quality prediction calculation of the single crystal rod in parallel are successively predicted, so that the occurrence of the defective part can be predicted one by one. As a result, it is possible to correct the correction pulling speed of the single crystal rod 24 of the defective portion and correct the heater temperature, and to correct these lifting speeds and correct the heater temperature feedback, thereby reducing or preventing the occurrence of defective portions. According to the invention of claim 4, the invention according to the fourth aspect shows that the calculation of the quality of the single crystal rod 24 and the calculation of the modified pulling speed are used as follows: 10 1311168 η 二 = parameter P1 of the manufacturing conditions of the single crystal rod 24, taking into account the calculation step of the temperature distribution in the 11 single crystal rod 24 in which the Shi Xirong liquid cuts out (5) liquid 13 grows; t = finds the cooling process The temperature distribution in the crystal rod 24 is as follows: the steps of the concentration distribution and size distribution of the pores and the high temperature oxygen precipitates in the early, w曰 rods; (7) the calculation of the (four) single knot concentration line and the first] After the 2nd line t, the step of calculating the difference between the maximum value of the inflection point of the first equal concentration line and the minimum value of the inflection point of the first distribution line is calculated by calculation; (4) The parameters of the manufacturing conditions of the single crystal rod 24 , 'the step of calculating the difference between the maximum value of the inflection point of the first iso-concentration line and the minimum value of the inflection point of the i-th knife cloth value by changing p2 to PN sequentially; and (7) finding the same The difference between the maximum value of the inflection point of the 1 equal concentration line and the minimum value of the inflection point of the distribution line is the largest The step of manufacturing the ingot 24; the defect simulation (simulation) method for maximizing the defect-free area of the crystallizing rod 24 by the computer (defect simulad〇n _ 〇 实施 is implemented as a feature. In the method for producing the singular single crystal rod, the parameter A of the manufacturing conditions of the shixi single crystal rod 24 can be obtained, and the convection of Shi Xirong liquid 13 can be used to determine the eve of the growth of Shi Xirong liquid 13 The temperature distribution of the single society can be used to determine the distribution of the single crystal rod of the cooling process, that is, the cooling process of the single crystal rod 24 pulled out by the mash melt, and the BB rod is cold. And the quenching effect is analyzed; the concentration distribution and size distribution of the void (v. id) in the Shixidan Yinyu rod are predicted and the concentration distribution and size distribution of the high temperature oxygen precipitates in the 1311168 ingot of Shixi y曰jie are predicted at the same time. Then, after calculating the j-th equal concentration line Hcix and the i-th distribution line BClx in the single crystal rod, the maximum value of the change point of the first iso-concentration line and the first distribution line BC are calculated by calculation. The difference between the minimum points of the change points of U △ Z!. The parameters of the manufacturing conditions of the above-mentioned stone-like single crystal rod are sequentially changed from p2 to fN' and the maximum value of the change point of the first equal-concentration value HClx and the minimum value of the BCU inflection point of the first distribution value are calculated. After the difference is calculated, the maximum value of the first equal-concentration ft HCUt curve is obtained, and the difference ΔΖι of the minimum value of the BCU inflection point of the first material is the largest. According to this, the manufacturing conditions for the single-crystal rod 24 which is the most enlarged in the non-defective field of the pulling direction and the radial direction of the ingot 24 can be obtained by calculation. According to the invention of the fourth aspect, the calculation of the quality of the single crystal rod 24 and the calculation of the correction = the pulling speed are as follows: (1) The manufacturing conditions of the single crystal rod 24 are: a number Pi, a step of determining the temperature distribution in the single f-crystal rod 24 grown by the crucible melt 13 in consideration of the convection of the melt 13; (2) calculating the temperature distribution in the single-junction two rods of the cooling process, thereby Predicting the distribution and size distribution of the voids in the single crystal rod and the oxygen precipitates in the door Step (3) After calculating the second equal concentration line and the second distribution line in the single crystal rod, calculate the maximum value of the inflection point of the second equal concentration line and the change of the second distribution line. ''The step of the difference between the small value of the dignity; (4) will; the parameters of the manufacturing conditions of the single crystal rod of 5 eve, change from 1 > 2 to ? >1, the step of calculating the difference between the maximum value of the 12 1311168 of the inflection point of the second equal concentration line and the minimum value of the inflection point of the second distribution line; and calculating the inflection point of the second equalization line The step of manufacturing the condition of the single crystal rod having the largest difference between the maximum value of the second distribution line and the minimum value of the inflection point of the second distribution line, and a characteristic of the method for simulating the defect of the monocrystalline rod by using a computer Implementation. (4) When the manufacturing method of the single crystal of the sixth paragraph of the patent application scope is the largest, the manufacturing condition parameter P丨 of the Shixi single crystal rod 24 is the same as the fifth paragraph of the patent application scope, and the concentration of the void of the stone single crystal rod is predicted. Distribution and size distribution, and predict the high temperature oxygen precipitates and concentration and size distribution in the crystallized rod. Then, the second equal concentration line HC2x in the crystal rod of the material is calculated and calculated.

After the second distribution line BC2x, the maximum value of the inflection point of the concentration line (10)X such as 帛2 is calculated and the x difference ΔZ2 of the minimum value of the second distribution line Β (the minimum of the inflection point of 2χ). The parameters of the manufacturing conditions of the single crystal rod are changed, and the SPN' is changed sequentially from the crucible, and the maximum value of the inflection point of the second iso-concentration line HC2X and the inflection point of the second distribution line are calculated by the same calculation as described above. The minimum difference ΔΖ” further determines the difference between the maximum value of the inflection point of the second equal concentration line HC2X of the domain and the minimum value of the inflection point of the distribution line of the ^2. The largest single crystal rod is produced. According to this, it is possible to calculate the manufacturing conditions of the most expanded single crystal rod in the non-defective field in the pulling direction and the radial direction of the correct 2 stone single crystal rod 24. [Embodiment] The first embodiment is as follows: As shown in Fig. 1, the pull-up device 1 of the lithium single crystal, that is, the crystal pulling device 13 1311168, is provided with a main chamber ll which is capable of being vacuumed and loaded. The crucible 12 is disposed in the center of the room. The main chamber 11 is a cylindrical vacuum container. The prepared storage crucible 13 is composed of a bottomed cylindrical inner layer container and a bottomed cylindrical outer layer of the outer layer container 12a, which is formed of graphite. It is connected to the upper end of the boring shaft 14, and the lower end of the boring shaft 14 is provided with a driving device 16 for rotating and lifting the raft. In addition, the outer surface of the _12 is separated by a certain distance: At the same time, the outer peripheral surface of the heater 17 is surrounded by a gap of a crucible, and is provided with a cylindrical heat insulating tube 8. The upper end of the main chamber 11 is connected with a cylindrical pull having a diameter smaller than the diameter of the main chamber. The crystal chamber 19 ° is provided with a crystal pulling device (not shown) at the upper end of the crystal pulling crucible 19, and the crystal pulling device has a crystal pulling shaft rotation for the 13th surface of the Shixi melt which can reach the lower end of the chamber 11 And the structure of lifting and lowering. The lower end of the crystal pulling shaft 21 is provided with a seed chuck; 23, the seed crystal 22 can be clamped by the chuck. When the lower end of the seed 22 is soaked in Shi Xirong After 13th, the seed crystal 22 and (4) 22 are respectively rotated and lifted by the crystal pulling device, and the lower end of the seed crystal 22 can be obtained. The growth dream single crystal rod 24. The diameter of the Shixi single crystal rod 24 in the vicinity of the solid-liquid interface in the above-mentioned pull-up is detected by a straight-line detecting sensor (not shown) at a predetermined time interval. (4) It consists of a CCD camera and a radiation temperature. The detection output of the diameter detection sensor is connected to the control input of the controller (not shown) and the control output of the controller is connected to the heating. Η, = 襄 襄 _ _ 纯 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器 控制器The speed and V/G are set to a certain value. The heater temperature is stored as a map image, where V is the pulling speed of the single crystal rod (drawing speed) and G is the single crystal rod. The temperature gradient in the axial direction near the solid-liquid interface at the time of pulling. The controller controls the heater 17, the crystal pulling device, and the crucible driving device 16 based on the detection input of the diameter detecting sensor. That is, as shown in Figs. 1 and 2, the controller returns the detection output of the diameter change to the heater 17 and the crystal pulling device and the crucible driving device 16 to control the diameter of the single crystal rod 24. The method for controlling the diameter of the single crystal rod 24 can be used by (1) preferentially controlling the pulling speed of the single crystal rod 24, controlling the diameter of the single crystal rod to reach the target value, and (2) preferentially heating the heater. 17 Temperature The method of PID control to achieve the target diameter of the single crystal rod. In these methods, multi-stage PID control for changing the PID constant can be suitably employed. The PID control is one of the feedback control methods, which is a control method in which a signal proportional to the output of the system, an output integrated signal of the system, and an output differential signal of the system are combined. The specific method is to control the pulling (drawing) speed according to the following formula (A), so that the controller preferentially performs the diameter control when the top of the single crystal rod 24 is pulled, and the pulling is preferentially carried out in the later part of the lifting top. speed control:

Vn = Vs+Pkp(Vm/Vt) [ dn+IKi(Vm/Vc)I{(4.,4-dn)/2}x At + DKd(Vm/Vt){(dn—4])/Δί }χ exp(-t/T)〕.........(A) where: Vn is the pulling speed that should be controlled;

Vs is the set pulling speed;

Vm/Vt is the gradient of PID often 15 1311168 based on the top of the single crystal of the 矽 single crystal; I constant is the P constant at the top of the control, 1 is the positive coefficient of the PID control; it is called constant constant; The complement of the number 4 is the correction coefficient of the positive coefficient w constant of the target rod; the target diameter and the diameter deviation from the measured diameter; ', is the previous Δ t ^ g*, the diameter deviation of the 杬; Δΐ is the sampling Time; t is 〇IKi (=v: 'τ is a time constant. PKP(vm/Vt) is a P constant term; ' mt is a constant term; DKd(Vm/Vt) is a D constant term.) Lifting, the crystallization of the straight line _ is _-5 G_, "the single crystal rod Lu two t Chu around the range A (involved in Figure 1). The following: ^ 1 and 2 illustrate the manufacture of the crystal material When the top of the crystallized rod 24 is lifted, the setting of the lift is fast and the diameter changes greatly. Therefore, the p constant value, the work constant value and the D constant value in the controller (A) are set. The value is large. That is, because the inclination Vxn/Vt of the top pull constant is large, the q constant term and the 〇 constant term of the P constant term become larger, and the result is a complement to the pull speed of the diameter deviation. The amount becomes larger and the diameter control takes precedence, so that the diameter of the top can be changed quickly and stably. In addition, when the top part of the top is lifted, since the setting of the pulling speed is small, the diameter variation is small, so when lifting at the top, borrowing The gradient of the P constant of the equation (a) is made smaller by the controller, and the term of the constant term of the P constant is reduced. As a result, the correction amount of the pulling speed of the diameter deviation becomes small, and the pulling speed control is given priority. Therefore, it is possible to control the variation of the 16 1311168 speed of the lifting speed at the top to the minimum diameter control. In addition, in this embodiment, the priority of the control of the Zhizhi , is based on the stone 7 early 'township day rod length疋 heating test: ww 'current map image (map) and solid-liquid boundary = and: liquid sputum detection output, when correcting the heater temperature, also e 乍 0 and 疋 拉 pull speed relationship运: Adding the difference. That is, in the memory, the correction amount of the force and the temperature according to the amount of the melt and the position of the solid-liquid interface is stored as a map image, and the correction amount is adjusted according to the magnitude of the set pull-up degree. Correction, or as a setting Degree:: Corrects the mail constant of the heater temperature, and can quickly suppress the pulling effect. Even if the priority diameter is controlled, the wafer transferred by the material crystal rod can be completely turned into a defect-free state. The second embodiment is as follows: This embodiment is a method in which the pulling speed is controlled by pm, so that the stone core single crystal rod reaches the target diameter, and the target diameter of the stone single crystal rod 24 is deviated from the diameter of the measured diameter. The direct feedback method, and the amount of change in the diameter deviation as a method of feeding back to the current pulling speed, and controlling the single crystal rod 24 to the target diameter. When the pulling speed is controlled according to the formula (A) according to the first embodiment and the pulling speed control is prioritized, the pulling speed is controlled according to the following formula (9):

Vr^VrM+P[dn-UlRi^ + cyqx Μ + 〇(dn+2dn.r6dn.2+2dn.3 + dn.4)/(6At)] where: Vn is the pulling speed that should be controlled this time ;

Vn-1 is the lifting speed that should be controlled before; 17 Ι3Π168 Ρ is the Ρ constant of PID control; I is the I constant of PID control; D is the D constant of PID control; dn is the target diameter and measured by human The diameter deviation of the diameter; dn-! is the diameter deviation between the previous target diameter and the measured diameter; dn-2 is the diameter deviation of the second target diameter and the measured diameter; dn·3 is the second target diameter of 4 Deviation from the diameter of the measured diameter; dn-4 is the diameter deviation of the fourth target diameter from the measured diameter; Δt is the sampling time. Further, according to the formula (B) 'the pulling speed can be controlled so that the absolute value of the difference between the pulling speed Vn to be controlled and the pulling speed Vn. 2 to be controlled before does not exceed the predetermined pulling speed. The extent of the change.爰The method for producing the single crystal according to the above is as follows: The topping material of the single crystal rod 24 of the pulling stone is the same as that of the first embodiment, and since the pulling speed is set to be fast, the diameter is also changed by A, so it is set in the controller. The P constant, the 1* number, and the D constant of gas () are large. That is, since the gradient of the top of the PID can be larger than the gradient Vm/Vt of the number, the P constant, the I constant, and the D constant become large. As a result, the amount of correction for the pulling speed of the diameter deviation becomes large, and the diameter control is prioritized, so that the diameter of the top can be stabilized. In addition, when the top portion of the top of the lift is lifted, the pulling speed of the crystal rod 24 can be controlled by the formula (B) to calculate the pulling speed of the bill. "The body and σ are measured by the pull-up speed Vn-I of 4 - person, and the difference between the measured diameter and the private diameter of the previous diameter is taken as "1", and the deviation of the diameter is used as the deviation 6 In the case of η, the value of the deviation of 6 Η is subtracted from this deviation to correct the previous pulling speed Vy to be controlled, so that it can be further suppressed by 18 1311168; the fluctuation of the pulling speed of the single crystal rod 24 is obtained. Further, in the second embodiment, the amount of change in the direct control deviation of the direct I / / direct measurement of the Shi Xi single crystal rod 24 is used as the deviation to the pull speed of the Shi Xi single knot rod. Preferably, the piD control is performed on the above-mentioned pulling speed so as not to exceed the maximum variation of the correction of the current pulling speed. Specifically, when the pulling speed Vni of the previous control should be fed back to the next pulling speed Vn (ie, the pulling speed to be controlled), it is preferable to set the pulling speed. The limit is such that the amount of change in the pulling speed does not exceed the maximum correction difference Ho to suppress the variation of the pulling speed. In this way, when lifting the top of the single crystal rod, the pulling speed of the previous 7 single crystal rod is used as the base $, and the amount of change in the straight pinch deviation of the stone single crystal rod is fed back to the person as a deviation. In the case of the pulling speed of the single crystal rod, if the maximum fluctuation range of the current lifting speed correction is exceeded, the correction can be lifted by the 7 single crystal rod due to the limitation of the maximum variation. The change in speed is limited to the minimum. Figures 3 to 12 show a third embodiment of the present invention. This embodiment is a quality calculation of the defect simulation method of the 矽 夕 单 single crystal rod in the manufacturing method of the “ 结晶 2 实施 实施 实施 第 第 第 第 第 第 第 第 第 第 第 第 第 第 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 As shown in Figures 4, 5 and ^, firstly, using the computer to calculate the temperature distribution of the single crystal rod of the single crystal of the single crystal rod 24 from the start of the lifting according to the total heat transfer analysis, at the same time, In the actual lifting of the Shixi single crystal rod, the measured profile of the pulling speed from the start of the lifting to the predetermined time t and the setting of the lifting speed to the end of the lifting of the pulling speed are input to the computer. The quality of the crystal rod is predicted to be 13 1311168. When it is predicted that the defective single crystal rod 24 has a defective portion, the correction failure is calculated. The corrected pulling speed of the single crystal rod used for p and the corrected heater temperature f are used. Then, the lifting speed is corrected and the heater temperature is fed back to the temperature pulling speed and the heater temperature is set. Specifically, when the intrusion type indexing defect is predicted to occur in the single crystal rod 24, the pulling speed is set. By adding a small amount of quantification 5 to correct, and then according to the modified pull speed, use the computer to calculate the diffusion of defects and the formation of defects according to the defect simulation method described later. After the calculation 2, the intrusion type transposition defect still occurs, then further Correctly set the lifting speed to increase, and then according to the modified pulling speed, use the computer to calculate the spread of the defect and the lack of the defect according to the defect simulation method. This calculation is repeated until the prediction is no longer intrusion. If the intrusion type defect is predicted to occur, replace the set pulling speed with the above-mentioned corrected pulling speed, and lower the temperature set by the temperature. This will reduce or prevent the order. The occurrence of a defective portion of the crystal rod. Here, an invasive translocation defect (hereinafter referred to as L/DL) refers to an index defect formed by agglomeration of excess inter-column. Further, if a single crystal rod 24 is predicted In the case of void defects (v〇id defects), the set pull speed is corrected by the amount of reduction, and then the corrected pull speed is corrected. Degree, using the computer to calculate the diffusion of the defect and the formation of the defect according to the defect simulation method. When the calculation predicts that the void defect still occurs, the lifting speed is further corrected to reduce Δ 5, and then the modified lifting is performed according to the correction. Speed, as in the above, use the computer to calculate the diffusion of defects and the formation of defects by the defect simulation method. This calculation 20 1311168 directly reverses the Bellow to the person who predicts that there will be no voids and then the void defect occurs, to the +, w&;x Right predicts that the lift speed will not be changed for the machine: the pull speed, and the temperature set by the heater can be lowered to reduce or hinder the occurrence of the bad part of the single crystal rod. Defect refers to the void defect formed by the agglomeration of excess pores. The prediction of the quality of the 1st rod 24 and the correction of the pulling speed are calculated according to the simulation method of the stone-single-rod defect, that is, the computer Seek (4) =: After the concentration distribution and size distribution of the voids, use the computer to find::; Early, the concentration distribution and size distribution of the oxygen precipitates in the south of the crowbar. [I#] The distribution of the indifference and the size distribution of the voids in the Shixi single crystal rod 24 is as follows: First, by using the Shixi single crystal pulling device 410, the definition of the Tilatite single crystal rod 24 is arbitrary. Single crystal manufacturing conditions. The single crystal manufacturing condition is that when the pulling speed device 1G is used to lift the single crystal u, the variable of the hot zone fed back to the pulling device ι is given a parameter group of variables at a certain interval. .....Ρν. Further, the single crystal production conditions include the pulling speed of the single crystal rod, the rotational speed i of the single crystal rod, the rotational speed of the quartz (four) 15, the flow rate of the argon gas, and the shape and material of the member constituting the heat cap. The gap between the lower end of the lid and the surface of the crucible 13 and the output of the heater. Step 2 In this step, the stone singular crystal rod 24 is pulled to a predetermined length L 丨 (the column is in the state of 100 nun, that is, the main chamber (chamber) 11, quartz 坩埚 21 1311168 15 , Shi Xirong 13. The single crystal rod 24, the black lead inner container 12a, the outer container (insulation tube) 12b, etc. are meshed and molded. Specifically, the mesh points of the respective members of the heating zone are (meshp〇int) The coordinate data is input into the computer. At this time, the 矽 矽 | 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 (hereinafter referred to as radial direction mesh) is set to 〇〇1~5〇〇, preferably 0.25~1 _〇〇min. At the same time, the length of Shixi single crystal rod in the mesh of Shi Xi Rong 丨3 The mesh of the direction and the mesh of some or all of the melt 13 (hereinafter referred to as the length direction mesh) are set to 〇.〇1~5.〇〇, preferably 〇"~ 0.5 mm 〇

The reason why the radial mesh is set to 〇.〇丨~孓(9) coffee range is that if ON gamma 1 or less, the calculation time is extremely long. When it exceeds 5 〇〇 coffee, the calculation becomes unstable, even if it is calculated repeatedly. The shape of the solid-liquid interface is still difficult to determine. In addition, when the mesh in the length direction is limited to Ο. Η Η Η , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In addition, when a part of the radial direction mesh is limited to the 〇〇1~5 范 范 , , , , , , 〜 〜 〜 〜 〜 〜 〜 料 正 正 正 正 正 正 正 正 正 正 正 正 正 13 13 13 The melt 13 is limited to the above-mentioned specifications, and the part of the net with the == length direction is limited to 〇·〇1~5 〇〇 范围 ^ 尸 , , , , , , , , , , , 限定 限定 限定 限定 限定In the above-mentioned Fanye step 3 m ° k, the meshes of the components in the above-mentioned heating zone are arranged and the physical property values of the components are respectively input into the computer. For example, if the main ^ is made of stainless steel, the thermal conductivity of the stainless steel, the width 2, the 11 to the Kopping, the dryness 22 1311168 rate, the volume expansion coefficient, the density and the specific heat are input into the computer. Further, the pulling speed of the early crystallization rod 24 and the pulling speed of the 7 single crystal rod corresponding to the pulling speed, and the ritual flow parameter of the turbulent flow pattern (7) to be described later. Electric Step 4 ...= This uses a computer to calculate the surface temperature distribution of each component of the heating zone based on the heat generated by the heater and the radiation rate of each component. That is, the heat generation amount of the heater is arbitrarily set, and when it is input to a computer, the surface temperature distribution of each member is calculated from the radiation rate of each member by a computer. Step 5 Here, according to the surface temperature distribution and thermal conductivity of each member of the heater. The internal temperature distribution of each member was obtained using the computer's heat dissipation equation (1). Here, for convenience of explanation, the xyz orthogonal coordinate system is used, and the actual calculation uses the cylindrical coordinate system: A d T d β Q -- .aT Αχ Λ + 9 ί, θτ + 9 ίλ 3T) at atdy ay y J d Z 卜 aj J + q (1) where p is the density of each component, C is the specific heat of each component, and 绝对 is the absolute temperature of each mesh point of each component 't time; lx, 7 and. For the thermal conductivity of each component, X, y & ζ direction component, q is the heat generated by the heater. As for the Shi Xi Rong liquid 13, the heat transfer equation (丨) is used to determine the internal temperature distribution of the sputum melt 13 'according to the internal distribution of the mash liquid 13 and the turbulent flow 13 is assumed to be turbulent flow. Flow mode (2) and viscous fluid 23 1311168 Equation (Navie-Stokes equation) (3) ~ (5) 'Using the computer to calculate the internal flow velocity distribution of the sputum 13 · K t~ —— XXCX d Vic ... ( 2 ) P rt where kt is the turbulent heat transfer rate of sputum melt 13 , c is the specific heat of sputum melt, Prt is the prandti number, and p is the stone smelt 13 Density, c is the turbulent flow parameter 'd is the distance from the quartz wall of the sputum melt 13 and k is the sum of the squares of the variation of the average flow velocity of the mash 13: du ( du^7+u — v ,+w.3u dxdydz —+ ( VI + Vt) p dx

A2u a2u a2u , Fx d X2 dy2 a z2 J 十 P (3) d v . d v u dx ''dy 1 dp v^L+wav d z (V 1 + V t )

D-~w ~dT -updy 3 w . ... 3 w , 3 w ——+ V--+w——dxdydz -----h( vi +vt) pdz a2v a2v 52 v ' .Fy , ., lax2 1 3 y2 5 Z2 j Ding -- P . ", ·...

d 2w d 2w θ 2w 1 ; F z .3 x 2 d y2 a z2 ; I (5) where: 11, v and w are the x, y and z-direction components of the flow velocity of each mesh point of the mash 13 Vl is the molecular dynamic viscosity coefficient (physical property value) of the sputum melt, vt is the dynamic viscosity coefficient of the turbulent flow effect of the sputum melt, and Fx, Fy and Fz are the bady force acting on the Shixi melt. The x, y and z direction components. 24 1311168 The above m formula (2) is called KL_mode. It is best to use the 0.4~0.6 range of meat 々/立± 之 turbulent flow parameter c „ ^ Λ _ within the circumference of the value. The turbulent flow parameter C qualified name The range of 〇.4~〇·ό is that, because the interface is reported to be the same as the ancient 6th, the calculated interface shape will have a fluid equation that does not match the measured value. (3)~(5) Λ Further, the above special I) is a equation of motion when the fluid is non-compressive and a certain fluid. X is the internal flow velocity distribution of the Shixi melt 13 obtained according to the above, and can be advanced. - Step to use the computer to find the convection column of the melt: test the internal temperature distribution of the melt: (6) 3Ύ, 5Τ 5Τ UT--Η V -Γ-+ W-- dxdydz 'd2τ a2τ d2T , ~dxY+ ~dVT+~d~z^ where: U, w is the flow rate of each mesh point of the smelting liquid 13 and the yAz direction component 'T is the absolute temperature of each mesh point of the liquid (4), and the 々 is the stone immersion liquid Density, specific heat of melt, molecular thermal conductivity (physical value)' kt is the turbulent thermal conductivity calculated by equation (1). Step 6 Here, use computer according to Figure 11 containing point 3 The isothermal value of the three intersection points (tri_juncti〇n of solid, liquid and gas) is calculated as the solid-liquid interface shape of the single crystal rod 24 and the crucible melt. Step 7 Here, 'change (increasing Enter the heat of the heater of the computer, and repeat the above steps from step 4 to step 6, until the three intersections point $. After reaching the melt of the stone singular crystal rod 24, calculate the temperature distribution in the 〇1 of the pulling device. , 25 1311168 = β 夕 early - the coordinates of the mesh and the temperature and the data are stored in the electrical step 8 where the 'lifting length of the stone singular single crystal rod 24 plus plus (for example, (10) surface) After the operation of steps 2 to 7, the temperature distribution in the pulling device 10 is calculated. (4) The coordinates and temperature of the mesh of the single crystal rod are memorized in the computer. This step 8 is carried out until the single crystal rod of Shixi When the cold part is finished, the pulling length L1 of the single crystal rod reaches U (L2 is the length of the single crystal rod of the Shixi single crystal when it is separated from the night melt, that is, the crystal length when the growth is completed) and the single crystal rod is separated from the crucible. After the melt is melted, the single crystal rod is further pulled, The degree of Ηι (Ηι is the distance from the beginning of the straight 胴 of the single crystal rod to the liquid surface of the 矽 ( (refer to Fig. 6) reaches H2 (H2 is the beginning of the straight enthalpy when the cooling is completed (4) In addition, after the material crystal rod is separated from Shi Xirong night, the lifting height m of the stone single crystal rod is added by 5 (for example, 50 ugly), and the operation of step 2 to step is repeated as described above. When the pulling speed H1 of the single crystal rod 24 reaches Η?, the step 9 is performed. Step 9 Here, the time from the start of pulling the single crystal rod grown in the Shixi melt is started; After the ε 夕 single crystal rod is separated from the Shi Xirong liquid, it is pulled up to the time when the cooling is completed, and the time interval Δ is determined according to the determined time interval Δ (second (minor time interval)). At this time, not only the diffusion coefficient and the boundary condition of the lattice and the pores in the single crystal rod, but also the distribution of the void and the concentration distribution (seek) of the high-temperature oxygen precipitate described later will be described. The number used is input to 26 1311168, and the time interval between the above-mentioned zones is Δ ί sec. The data of the coordinates and temperature of the mesh of the single-crystal crystallization rod obtained in step 8 is calculated as 矽 single crystal ^

The pull-up length Ll of 24 and the height of the pull-up Ηι and the temperature distribution in the Shixi single crystal rod. X, that is, in steps 2 to 8, the coordinates and temperature of the net of the single crystal are obtained for each lift length 5. Since, for example, the tiling single crystal % leg takes several tens of minutes, the temperature change of the mesh of the tens of minutes of the single crystal is differentiated as a function of time to find the singular crystal of t(^At seconds) The pull length U and the lift height H1 of the rod and the temperature distribution in the single crystal rod. Step 10 Next, according to the diffusion coefficient and the boundary condition of the pores in the single crystal rod, the diffusion equation and the boundary condition (after 4 (9), (10), and (13)), the concentration distribution of the pores and the lattice gap after At seconds is obtained. The specific calculation of the concentration Cv of the pores is as follows (7). In the equations (7) and (8), in order to calculate the change of the concentration Cv and Ci over time (with time), the heat balance between the pores and the lattice is assumed to be in the equation (7) and (8). (8) C ie = K 2 exp__马 i . kTj where Κι and K2 are constants (c〇nstant), and 艮 and Ev represent the formation of the space between the lattice and the void Energy, Cve &~e represents the balance, κ represents the waveman constant ' Τ is the absolute temperature. 27 1311168 Balanced differential time, the pores and the inter-lattice silicon to each. D C of the formula (9) and (1〇) ''

~~^ — — V(DvV Cv)+V — D v C v V T

Dr l kBT2 J + 0(T-Tn)kiv(T)(CiCv-Cie(T)Cve(T)) —Θ(Τν〇- T )Nv〇x 47ΓΓ v〇Dv(Cv—Cve) -©( TP-T)NPx47rRp*/D〇D〇...(9)

~~=-V(DiVCi)+v[-^-DiCiVT (kBT2 + 0(T-Tn)kiv(T)(CiCv-Cie(T)Cve(T)) -0(Tv〇-T)Nv〇 x47rrv〇Di(Ci-Cie) (10) where Θ(Χ) is the Heaviside function. That is, x<0 Θ〇〇=〇, and x> 〇时Θ(Χ)=Μβ represents the temperature of the N-side when the formation temperature τρ of the high-temperature oxygen precipitate is compared with the formation start temperature TvG of the void. Further, the right side of each of the equations (9) and (10) One item is the Fick equation, and the team and the lanthanide in the first item on the right are represented by the following equations (11) and (12). The diffusion coefficient D v = d ve.xp 'ΔΕν D i = d exp

f ΔΕ j "kT (11) (12) where: ΔΕν and AEi represent the activation energy of the pores and the lattices, respectively, and dv and mountains represent constants, respectively. The second item on the right side of equations (9) and (1) 28 EV and Eit in 13 1311168 represent the activation energy due to thermal diffusion, respectively; kB is the waveman constant. Also, the = hole and the inter-grid stone, -: the number it is the empty hole and the Nv in the fourth item on the right side of the (10) and (10). Empty hole < / morning degree Γ ν. The radius of the void is the fifth term of the rich side of the high temperature oxygen precipitate. η 4 / Chen Rp is the radius of the two-temperature oxygen precipitate, and γ is the amount of the precipitate. The pores of each oxygen atom required for the precipitation are eliminated. The 件 ΐ ΐ ΐ D D D D D D D D D D D D D D D D ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' For the case where the Si matrix and Si〇2 are different in volume and volume, the following formula (10) can be established: ^^-▽(DvVCvHvf^^vCvVTj + ©(T-Tn)kiv(T)(CiCv-Ci -(T)Cve(T)) ~0(Tv〇-T)Nv〇X47rrv〇Dv(Cv-Cve) -NPx 4ttRpDv( Cv-Cve) (13) Less than 11, here, according to the solution The cavity Cv knife cloth obtained by the diffusion equation (13) is obtained by the following formula (14) to determine the formation start temperature Tv0 of the hole: Τ' k C. C, -kB°·

E T,

0 . 6 8 cr v 1 · 5 P + Tv〇0· skB0· 5 Ev (14) where cvm is the equilibrium concentration of the pores at the melting point Tm, and Ev 29 1311168 is the pore forming energy. , Tm is the melting point temperature of the single crystal rod. Further, ~ is the interface energy 'p rides the density of the single crystal rod, and κ Β is the waveman constant. Step 12 and then explain, first explain the steps Β Step 13 When the temperature of the grid point of the grid is Τν0', the following approximation is shown here: when the 矽 single crystal rod is gradually reduced, the pore formation is achieved. Starting temperature (15) Find the concentration of the hole nv0 : N v〇 = a dT ' dt , (DvkBT2) -1· 5(CV) -0. 5 (15) Step 14 Here, use the following outline to find Shi Xi The temperature of each point in the single crystal rod is smaller than the radius rv0 of the hole when the formation start temperature Tvq is low.

P {Dv(Cv - Cve) - Di(Ci - Cie)}dt + . (1 6) where: t! represents the formation start temperature Tv of the void of the mesh of the single crystal rod. At the time of the day, r 2, ..., the degree of the dish is reduced to the above steps 9 to 11, 13 and ': the critical diameter of the hole. Soil, and 14 ' until the stone singular gentleman a connect to reach a specific value between the ~ 1 〇 sail, for example, cool to step 17). c from the bottom (steps (9) ~ (16) by computer 瞀 ^ clothing. As for steps 15 and 30 ulll68 16 will be explained later. Teaching cloth] 矽 single crystal rod 24 in the high temperature gas The concentration distribution of the precipitates and the step 12 are fi; returning to step 12', according to the concentration Cv distribution of the pores obtained by solving the above diffusion equations (9) and (1〇), the high temperature oxygen product is calculated according to the following formula (10). Forming the starting temperature TP:

Tpl· 5 kb 1 * 5 l〇g^ [Co ) Cv y' _ ks0* 5(E〇+ y Ev) L .Com, .C vm , j Tm J + Τ kB〇· 5(E〇+ 7Ev )

• (IV _ Ο . 6 σ, Ρ where · C 〇 represents the oxygen concentration, is the melting point of the fine 矽 melt η h equilibrium concentration, eg Wei dissolved energy, Ev is the pore forming energy, 2 early crystal rod The (1) and the called interface energy, and the 丫 is the SiO 2 analysis: the hole consumption of each oxygen atom required for the precipitation of invariant positive value, the value is 0.68. Step 15 Here, when the single Du B is connected to ~, ° The temperature of the grid points of the respective nets in the aa bar is (i:: and the temperature at which the formation of the oxygen precipitates in the chamber is reached, and the concentration Np of the high-temperature oxygen precipitates is determined according to the following formula, where & Is a constant: ................ —................................ ... NP== a 2 d D, 1 g —------------------------------------ ------------------- dt

Cv(D oCqIcbT2)-1. 5 ...... (18) 31 1311168 Step 16 "Μ 1 y) The appearance of each of the nets in the single crystal of the 夕 夕 夕 榉 早 早 较高 较高 较高 较高 较高Temperature = radius of oxygen precipitate Rp : 冋 low 冋 temperature R, ~Co J Dod t +R, μ t2 19) , again, the above formula (19) can be established as Dv (Cv-Cv& rD〇 c: In the case where the flow rate of the precipitated holes is sufficiently high to fill the volume difference of the C-pre-C mass of the si&fU, the following formula (2〇) can be established: RP = if D v( CV Cve)dt+ Rcr2 ......(2 0) [r β Λ J Step % 17 Here, the above steps 9, 10, 12, 15 and 16 are repeated until the single crystal rod is cooled to a specific value between 800 and 100 (rc, for example 9 〇 (rc or less. The above formulas (9) to (13) and (17) to (20) are obtained by electrical touch calculation. Step 18 Here, the P-band of the above-mentioned south temperature oxygen precipitates is present. The voids and the high-temperature oxygen precipitates are all divided into non-defective areas, and the first equal concentration line HC〗X' is obtained by calculation to divide the defect-free area closer to the single-layer 32 1311168 crystal bottom side than the p-band ( Refer to Figure 9). Step 19 Therefore, the high concentration of oxygen precipitates is divided into the presence of the enthalpy, eight && d 9 long,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The position of the side of the first 丨 distribution line is: 矽: the equilibrium concentration of the 格子 between the 矽 矽 矽 在 在 在 在 在 m m m m 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 126 h Farming degree (a specific value in the range of M2~〇.13%, for example, 〇126%, refers to the towel of the service life (hfetlme), etc. Corresponding to the concentration of the B-band, the B-band means that the condensate of the sputum between the slabs becomes a nucleus and the oxygen precipitates become a high concentration by heat treatment. Step 20 Here, the surface of the first iso-concentration line HC1X is obtained. If the difference between the maximum value of the point and the minimum value of the inflection point of the first distribution line BClxi is, for example, three points of the inflection point of the i-th equal concentration line HC1X, each of the inflection points Q1(l, x), Ql(2) , x) and Ql (3, x) are set to [r Q1(1,x), z Qi(l'x)], [ r Q1(2,x) ' z Q1(2,x)] and [r Q1(3,x),z Q1(3,x)], and find the z coordinate in these coordinates, ie the maximum value ZQi in z Q1(i,x), z Q1(2,x)& z qi(3,x) l, x). 'If it is the curve of the ith distribution line Bclx. For example, if there are five 'transforms each of its points SKhx', SK2, x), SiP.x), Sl(4, x) and Sl(5, The coordinates of x) are set to [rsl(l,x),zsl(l,x)], [rsl(2,x), zsi(2,x)],[ rsl(3,x) ' zsl(3' x)], [rsl(4,x),zsl(4,x>] and [rsl(5,x),zsl(5,x)]' then find the z coordinate in these coordinates, 33 13 Π168

Zs!(l'x), Zsl(2,x), zsi(3,x), Zsi, followed by the minimum large value ZQ1(1,X) and the ith distribution line Bdx The difference between the X points of change is ΔΖι(χ). The small value Zsi (3, x) of the point is taken. Step 21 Here, the parameters of the single crystal manufacturing condition are changed to the operation of the step 20; then the 2 2' step 2 step-to the step (4) is performed. Repeat the above-mentioned step 2 to step ·; the parameters of the H-pieces are changed to the first-order concentration line 0, and the difference between the minimum values of the calculated points is determined = the same as the first distribution line

Zl (X) is the largest single crystal production condition. (4) Calculating the I:::::: of the difference Δ degree: the step of predicting the calculation of f and the step of correcting the pull-up method, and the steps 1 to 17 and the above-mentioned defect mode step 18, The high temperature oxidization of the material exists in the presence of sputum and pores and - oxygen precipitates are not present. V. Hing: hole and direction: (4) one to divide the defect-free area ratio; the position of the isolateral side (refer to Figure 12) . Take the more sinful k single," top step 19, while S counts = concentration of oxygen precipitates in the presence of the B-band and non-defective areas, with the band closer to the single community 2 2 distribution line BC2x, to divide the defect-free field than B The position of the bottom side of the crystal. The second distribution line refers to a specific value of the equilibrium concentration of the lattice between the grids at the concentration of the grid 34 1311168 7矽, in the range of 〇12~〇i3%, for example, 〇 .126% of the concentration line. Here, the specific value of the range of the inter-column enthalpy concentration is 0.12~0, 13%, for example, 〇126%, the buckle, the star is calculated by the inter-grid concentration of the grid. The concentration corresponding to the B band is observed from the life chart of the service life, etc. Step 20' Here, the minimum value of the inflection point of the second equal concentration line HC2X and the inflection point of the 2# distribution line BC2x are obtained. The difference between the maximum values is 22. If there are three inflection points of the second equal concentration line HC2X, for example, the coordinates of each of the inflection points 'X), Q2 (2, x) and Q2 (3, x) Set to [r Q2(l,x),z Q2〇,X)], [rQ2(2,x),zQ2(2,x)] and [rQ2(3,x),Zq2(3,x)] And find the Z coordinate in these coordinates, z Q2( 1,x), z Q2(2,X) and z Q2(3 ,x) the maximum value z Q2(1,X). Also, if the second distribution line BC2x is inflection point, if any In five cases, the coordinates of each of the transformation points S2 (1, x), S2 (2, x), s2 (3, x), S2 (4, x), and S2 (5, x) are set.

Zs2(2,X)], [rs2(3,x),zS2(3,x)], U2(4,x),Zs2(4,x)] and [rs2(5'x) ' Zs2(5 , x)], find the z coordinate in these coordinates, ZS2 (l'x), ZS2 (2, X), Zs2 (3, x), Zs2 (4, x) and Zs2 (5, x) ^The minimum value Zs2(3,x) 〇Step 21' Here, the parameter of the single crystal manufacturing condition is changed to P2, and the operation of step 2 17 and steps 18~2G is performed; and the parameters of the single junction manufacturing condition are changed to P3, carry out steps 2 to 17 and step 18, ~2〇, the operation until the parameter of the crystallization manufacturing condition is changed to PN, and after repeatedly performing the above operation, seek 35 1311168 ^, etc.; the curvature point of the brightness line HC2X The difference between the minimum value and the maximum value of the inflection point of the second distribution line BC2X is ΔΖ2 (χ), and the single crystal production condition in which the difference ΔZ2(x) is the largest is calculated by calculation. The embodiment of the present invention will be described in detail below with reference to comparative examples. Example 1 According to the formula (A), the pulling speed is controlled and the dream single crystal rod of the predetermined diameter is pulled up. Comparative Example 1 A single crystal rod of a predetermined diameter was pulled up according to the following formula (C). At this time, set the PID constant as the pull below the top.

Vn=Vs+P (dn+IZ{(dn.1 + dn)/2}x Δί +D {(dn—dn·,)/ Δ t} χ exp(-t/T)]..... (c) The same symbol as in the above formula (A) in the formula (C) indicates the same item. Comparative Example 2 A single crystal rod of a predetermined diameter is pulled up according to the above formula (C). At this time, the PID constant is set. As a top pull. <Comparative Test and Evaluation> Figures 13 to 15 show the change of the actual pull speed of the example and the comparative example 丨 and 2 to the set pull speed. # — ^第13〜15 As can be seen from the figure, in the case of Comparative Example 1, the actual pulling speed is longer than the predetermined pulling speed, and the pulling length is long. When the surface is compared with the comparative example 2, the speed fluctuation below the top is large. Quality: gentleman, poor (refer to Figure 15); in the case of example i, the actual pulling speed and the pulling speed & required to pull up the length is significantly shorter, about 1 camphor (see 36 1311168 according to the 13th Fig. 2 Example 2 As shown in Fig. 16(a), the stone-shaped single crystal rod of the determined diameter is cultivated between the temples and predicted to be followed by the quality. This example is to raise the seedlings until the time is fixed. The crystal length is 51 〇 round. Considering the length of the pulling crystallization of the determined time and the measured pull speed profile (pr〇file) at that time, it is assumed that the single crystallizing rod is then pulled at the set pulling speed to complete the pulling operation.品质 仃 品质 品质 品质 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 品质 品质 品质 品质 品质 品质 品质 品质 品质 品质 品质The L/DL field is generated. 'According to this prediction result, in order to reduce the L/DL occurrence area that is predicted, that is, the defective part, the situation in which the defective part disappears is corrected while the lifting speed is set. The result is shown in 16〇3. ) Figure. In the 16th (a) &amp; (b) diagrams, the PI field is a field in which the defects (10) caused by the lattice-type shi _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the pv field is an area in which a hole type defect is dominant and there is no defect caused by hole agglomeration. Since this example will generate ±L/DL for the prediction, the set pull speed will be corrected upward. With this correction, the pulling speed is set to be faster, and the actual pulling speed is also increased in conjunction with the speed. As a result, returning to the non-defective part such as l/dl, such as the above-mentioned parallel quality prediction calculation in the pulling of the crystal rod, the pulling speed of the continuous measurement can be quickly made; 4 π $ # &gt;&lt;; + The setting of the bad part of the birth is consistent with the reduction of the bad part. In addition, after the growth of the 钍s% port, the quality of the crystallization is determined based on the results of the quality prediction of the crystallization. 37 1311168 It can be seen from the above that the present invention controls the pulling speed of the single crystal rod to control the single crystal rod to reach the target diameter and the control method for controlling the heater temperature to make the single crystal rod reach the target diameter. It is applicable to the PID control method of changing the PID constant at the stage of the plural, so that the PID constant of the PID control can be set to a larger value when the top of the single crystal rod is pulled, and the control of the diameter control of the single crystal rod is preferentially carried out. At the same time, when lifting at the top of the 矽2 crystallizing rod, the phase of the PID control of the number of PID hangs is reduced, and the control of the pulling speed control of the singular single crystal rod is given priority. As a result, when the top of the Ba-bar is lifted, the pulling speed of the diameter deviation is increased, and the diameter of the top is made to be stable, so that the diameter of the top of the bar can be stabilized. In this case, since the correction amount of the pulling speed of the diameter deviation becomes small, the diameter variation below the top can be suppressed to the minimum. In addition, in the above-mentioned j D control method for controlling the pulling speed of the Shixi single crystal rod, the diameter deviation of the direct control of the single crystal rod and the direct measurement of the direct measurement are directly The method of feedback and the change amount of the above-mentioned diameter deviation as a method of directly feeding back the current pulling speed as a deviation can perform the pulling speed of the previous single crystal rod when pulling at the top of the single crystal rod. The pulling speed of the PID control feedback is used as a reference, and the deviation of the diameter of the target diameter of the single crystal rod and the diameter of the measured diameter minus the diameter of the target diameter of the single crystal rod and the diameter of the measured diameter is used as the deviation. Correcting the lifting speed of the previous one, and the variation of the pulling speed of the single crystal rod of the Shixi single crystal rod under the lower part of the lifting, and the variation of the diameter deviation between the target diameter of the single crystal rod and the measured diameter as the deviation When feeding back to the pulling speed of the single crystal, for example, the speed of the upper 38 1311168 4: the actual PID control, so that it does not exceed the correction of the current lifting speed When the single crystal rod is pulled, if it exceeds the maximum fluctuation range of the current lifting speed correction, 提 = Ϊ about the maximum fluctuation range and the pulling speed of the 11 single crystal rod is additionally 'pre-crystallized at @ In the actual lifting of the rod, the light weight is calculated from the pr〇file and the set pulling speed. The quality prediction of the stone singular crystal rod is calculated. If it is predicted that a defective part will occur, calculate the correction of the Shixi single crystal rod, speed and correct the heater temperature, and feed it back to the set pulling speed and set the heater temperature. This can reduce or prevent the occurrence of the stone single crystal rod. 1 ^ In addition, the above-mentioned method for predicting the quality of single crystal rods and the method for calculating the lifting speed are not only used to determine the internal temperature of the stone core, but can be calculated in the cooling process. The temperature in the crystal rod is divided into * cloth, that is, considering the cooling process of the single crystal rod which is separated from the crucible melt, the single crystal of the crystal rod and the quenching effect of the crystal rod are determined by the computer. Concentration distribution and size distribution. Huan, according to the calculation to find Shi Xidan = the i-th concentration line in the ingot and the first! After dividing the wiring, and calculating the difference between the maximum value of the inflection point of the first equal concentration line and the small value of the inflection point of the second distribution line, the parameters of the manufacturing conditions of the single crystal rod are changed, as described above. Similarly, the difference between the maximum value of the inflection point of the i-th concentration line and the minimum value of the inflection point of the i-th distribution line is obtained. Further, the difference between the maximum value of the inflection point and the minimum value of the inflection point of the first distribution line of the second confinement line is obtained as the manufacturing condition of the maximum single crystal rod of 39 1311168. Such a g is produced in the pulling direction and radius of the single crystal rod, and the manufacturing conditions of the single crystal rod are expanded according to the accuracy of the sixty-six. D is the most no defect field, calculate the distribution line in the single crystal rod, and find the difference of the second equal concentration line == degree line... the difference between the minimum points of the bending points of the wiring, change f 2 And the parameters of the second sub-manufacturing conditions, as described above by the calculation; second:;: rod

The maximum value of the curved point and the change of the second distribution line: the change of the line, the difference between the small points of the point, and the maximum value of the curve of the first line of the iron track and the first line of the distribution line The difference between the minimum value of the curve = the maximum production condition of the crystallized rod can also be obtained by the same effect as described above. From the above, it can be seen that the method for producing a single crystal rod of the present invention can be applied to a single crystal rod of a Czochralski method (pull up) to control the diameter variation of the single crystal rod. Take wafers with no micro defects.

40 1311168 [Comprehensive description of the drawings] The second diagram of the present invention is a longitudinal sectional view of the single crystal rod of the first and second embodiments of the present invention; FIG. 3 is a block diagram showing the operation of the single crystal rod in the third embodiment of the present invention; the control chart when the rod is pulled; and the figure 4 is for predicting the single crystal rod of the stone The quality of the previous paragraph of the process of the fifth figure is to predict the dream of a single photo of the sigma of the sigma 2; 4; early,,, ° day and day. Flow chart of the operation of the latter part of the mouth; Figure 6 is a flow chart of the first stage of the defect simulation method of the single crystal rod; Figure 7 is the flow of the second stage of the defect simulation method of the single crystal rod Fig. 8 is a simulation method of the defect of a single crystal rod. Fig. 9 is a flow of the fifth stage of the fourth stage of the process of the defect simulation method of the single crystal rod. The 10th is The figure of the simulation method of the defect of the stone singular crystal rod, the U drawing of the crystal pulling machine is a sectional view of the main part of the ramming liquid which is made into the mesh structure; the early 12th picture shows the change of the 矽 single knot 曰 crystal The distribution diagram of the 矽 矽 空 空 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 13 Comparative Example 1: The elongation of the crystal rod and the change of the pulling speed (4), when the pulling speed occurs, the "crystal stick of the example 2 is predicted to have a bad state diagram" ... the degree of the dish is reduced to reduce the occurrence of the defective portion. [Symbol description] 10...Shixi single crystal pulling device π-12a • Main room Container 12 13 ... 矽 melt 16 ... drive device 18 ... insulation tube 21 ... pull shaft 23 ... seed clip Holder 12b - - 埚 埚 outer container 14 ... shaft 17 ... heater 19 pull chamber 22 ------ seed crystal 24 ... 矽 single crystal rod 42

Claims (1)

1311168__ Announcement---- (V '' Pickup, patent application scope: [Scope of application for patents] 1. A method for manufacturing single crystals, which is carried out from the melt of the melt by the heater (17) a crystallization rod (24) for detecting a change in diameter of the bismuth single crystal rod (24) at a predetermined time interval in the pulling, and feeding the detection data back to the pulling speed of the bismuth single crystal rod and the heater ( 17) A method for controlling the direct control of the above-mentioned crystallizing rod, characterized in that: a method for controlling the pulling speed of the above-mentioned single crystal rod (24) for controlling the above-mentioned single crystal rod (24) to reach a target diameter And controlling the temperature of the heater (17) at which the single crystal rod reaches the target diameter, and the multi-stage application is used to change the PID control of the PID constant (1) on the top of the single crystal rod (24) When pulling, the PID constant of the above piD control is set to a larger value to increase the correction amount of the pulling speed of the diameter deviation of the single crystal rod (24), and the diameter control of the single crystal rod (24) is preferentially performed. Control; and (2) in the order When the top of the ingot (24) is pulled below the tip, the PID constant phase of the PID control is reduced to reduce the correction amount of the diameter deviation of the single crystal rod (24). And the control of the pulling speed control of the dream single crystal rod (24) is preferentially carried out. 2·—The manufacturing method of the single crystal of the stone is extracted from the melt of the melt by the heater (丨7) a crystallization rod (24) for detecting a change in diameter of the bismuth single crystal rod (24) at a predetermined time interval in the pulling, and feeding the detection data back to the pulling speed of the bismuth single crystal rod and the heater ( 17) Temperature control 43 1311168 The method for making the diameter of the above-mentioned single crystal rod is: for controlling the pulling speed of the above-mentioned single crystal rod (24) of the single crystal rod (24) reaching the target diameter In the PID control method, a method of directly feeding back the diameter deviation between the target diameter of the single crystal rod (24) and the measured diameter and a variation of the diameter deviation as a deviation is fed back to the current pulling speed. The method is its characteristic. 3 · A method for producing a single crystal of sputum is to extract a stone single crystal rod (24) from a stone melt melted by a heater (丨7), and the strip is detected at a predetermined time interval in the pulling The method for controlling the diameter of the single crystal rod (24) and feeding the test data to the pulling speed of the single crystal rod and the temperature of the heater (17) to control the diameter of the single crystal rod is as follows: When the amount of change in the deviation between the target diameter of the single crystal rod (24) and the diameter of the measured diameter is used as a deviation, and the feedback speed of the single crystal rod is fed back, the pulling speed PID is controlled so as not to exceed The greatest change in the current correction speed is characteristic. 4. The method for producing a single crystal according to any one of claims 1 to 3, wherein in the pulling of the single crystal rod (24), the pulling speed from the start of the pulling to the time of the winding is used. The measured setting file (pr〇me) and the lifting speed from the start of the lifting to the end of the lifting, and parallel calculation of the quality of the above-mentioned single crystal rod to predict whether the above-mentioned single crystal rod will have a bad part, and the prediction When the above-mentioned defective part occurs, the corrected pulling speed of the single crystal rod and the corrected heater temperature of the defective part are corrected, and the 44 1311168 positive heater temperature is fed back to the above setting. Pull speed and pull speed and set heater temperature. 5. The method for manufacturing a single crystal according to item 4 of the patent application scope, wherein the calculation of the quality prediction of the Shixi single crystal rod (24) and the calculation of the modified pulling speed include the following steps: , (4) in the parameter P1 The manufacturing conditions of the stone singular single crystal rod (4), considering the convection of Shi Xirong liquid (13), the step of calculating the temperature distribution in the above-mentioned broken single crystal rod grown from the above (4) liquid (13); (b) borrowing The temperature distribution in the above-mentioned single crystal rod in the cooling process is predicted, and the steps of the distribution (vGid) in the single crystal rod and the concentration distribution and size (sjze) distribution of the high temperature oxygen precipitate are predicted; (4) After the first equal concentration line and the first distribution line in the single crystal rod, the step of determining the difference between the maximum value of the inflection point of the first isocratic line and the minimum value of the inflection point of the first distribution line is calculated; (4) The parameters of the manufacturing conditions of the above 11 single crystal rods are sequentially changed from &amp; to pN, and the above-mentioned first is calculated by calculation! a step of the difference between the maximum value of the inflection point of the iso-concentration line and the minimum value of the inflection point of the first distribution line; and (e) determining the maximum value of the inflection point of the first iso-concentration line and the first The difference between the minimum values of the inflection points of the sub-wirings may be the step of manufacturing the above-mentioned billing crystal rods at the maximum; the computer is the one that maximizes the defect-free simulation method of the above-mentioned stone-like single crystal rods. 6. If the manufacturing method of the single crystal of the fourth application of the patent scope is t 45 1311168, the quality prediction calculation and the calculation of the modified pulling speed of the single crystal rod (24) have the following steps: In the parameter P, the manufacturing condition of the single crystal rod (24), considering the convection of the mash liquid (13), the step of calculating the temperature distribution in the crystallization rod from the above (4) liquid (13); (b) a step of predicting a void distribution (vGid) in the single crystal rod and a concentration distribution and a size distribution of the high temperature oxygen precipitate by determining a temperature distribution in the above-mentioned single crystal rod in the cooling process; 8. Calculate the second equal concentration line and the angle in the above-mentioned material crystal rod. After the 'eighth two: calculate the maximum value of the inflection point of the second equal concentration line. 1 The minimum value of the inflection point of the second knife wiring. Step of the difference; (4) Put the parameters of the manufacturing conditions of the upper crystal crystallization rod to PN, and calculate the upper 依 according to the calculation?笙.曲麻秘 2, the first of the 2nd eight-year-old green, the second, the second, the second point of the curve, the maximum of the change point (four), the step of the difference between the minimum of the change point of the first knife wiring (4) The difference between the minimum value of the inflection point of the wiring of the 2 equal-concentration line, and the difference between the minimum of the inflection point of the wiring of the second knife, and the condition of the above-mentioned condition of the second knife. The computer makes the upper 曰 domain maximize the defect simulation method is widely implemented, the stick is not edited 46