TWI309445B - Solder for manufacturing bumps and bumping process - Google Patents
Solder for manufacturing bumps and bumping process Download PDFInfo
- Publication number
- TWI309445B TWI309445B TW093128686A TW93128686A TWI309445B TW I309445 B TWI309445 B TW I309445B TW 093128686 A TW093128686 A TW 093128686A TW 93128686 A TW93128686 A TW 93128686A TW I309445 B TWI309445 B TW I309445B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder
- bumps
- layer
- protective material
- bump
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 29
- 230000008569 process Effects 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000463 material Substances 0.000 claims description 36
- 230000001681 protective effect Effects 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 20
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 230000004907 flux Effects 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 230000004888 barrier function Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010017711 Gangrene Diseases 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
- H01L2224/05027—Disposition the internal layer being disposed in a recess of the surface the internal layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05181—Tantalum [Ta] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
1309445 14272twf.doc 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種焊料與半導體製程,且特別是有 關於一種製作凸塊之焊料與凸塊製程。 【先前技術】 覆晶接合技術(Flip Chip Bonding Technology)主要是 利用面陣列(area array)的排列方式,將多個焊墊(bonding pad)配置於晶片(die)之车動表面(active surface),並在各個 焊墊上形成凸塊(bump) ’接著再將晶片翻面(flip)之後,利 用晶片之焊墊上的凸塊分別電性(electrically)及機械性 (mechanically)連接至基板(substrate)或印刷電路板(PCB)之 表面所對應的接合墊(mounting pad)。其中,由於覆晶接合 技術係可應用於高接腳數(High Pin Count)之晶片封装結 構’並同時具有縮小封裝面積及縮短訊號傳輸路徑等多項 優點’所以覆晶接合技術目前已經廣泛地應用在晶片封裝 領域。 為了以覆晶接合的方式將晶片配置在基板或印刷電 路板之表面’就先前所述之覆晶接合技術而言,可以預先 在晶片之主動表面的焊塾上形成凸塊。舉例而言,習知之 常見的凸塊製程乃是預先形成一層具有多個開口(opening) 之網版(stencil)或感光薄膜(photo film)於晶片或晶圓(wafer) 之主動表面上,用以作為一罩幕層(mask),而這些開口係 可分別暴露出其所對應之焊墊。接著,再利用印刷(priming) 的方式,將焊料(solder)填入開口及焊墊兩者所圍成的空間 1309慨 fdoc 内’因而形成-焊料層於各個烊墊之上。然後,移除上述 之網版或感光薄膜,而暴露出位於各個焊墊之上的焊料 層。之後,迴焊__這些焊料層,當這些焊料層冷卻之 後,其將分別在其所對應的焊墊之上形成具有球狀外觀之 凸塊。 上述用以形成凸塊的焊料通常是以金屬合金粉末作 為主要組成物,而有鑑於金屬合金粉末在迴焊過程中可能 產生氧化反應’習知通常會在焊射添加助焊娜ux),以 去除焊料巾不必要的氧化物及雜f。細,由於助焊劑在 迴焊過程巾,亦可能與焊射的氧化物或基板上之高分子 層產生反應而生成氣體,因此在經過迴焊製程之後,此些 水與一氧化钱其他氣體將會在凸塊巾形鼓孔⑽d)而 無法跑出,且為避免金屬合金粉末氧化,—般使用還原能 力較強的之助焊劑,但相對⑽性也較高,在凸塊形成後 殘留的助㈣可能對凸塊及其他物質造成危害,因而影響 凸塊之可靠度(reliability)與製程良率。 【發明内容】 有鑑於此,本發明的目的就是在提供一種製作凸塊之 焊料’其可有效聽金屬合金粉末之氧化,並可減少助焊 劑之使用量,以形成高可靠度之凸塊。 v f發明的再一目的是提供一種凸塊製程,其係藉由上 述之焊料形成所需之凸塊,因此可減少迴焊過程中空孔之 產生’進而提供較佳之製程良率。 基於上述或其他目的,本發明提出一種製作凸塊之焊 1309441,. 料,其主要組成包括一助焊劑、一金屬合金粉末以及一有 機保護材(Organic Solderability Preservation,〇sp),其中有 機保護材係塗覆於金屬合金粉末表面,且此有機保護材適 於在210°C〜240°C之溫度下揮發。 在本發明之較佳實施例中,上述之金屬合金粉末的材 質包括含錯合金或無錯合金,其例如是絲合金或錫銀銅 合金。此外,有機保護材可以化學式(1)表示如下:
其中IU列如是芳基(Aryl)或C0〜C7之院基(Alkyl),而χ 例如是氫(η)、氣(C1)或二氧化氮(N〇2)。 本發明更提出一種凸塊製程:首先,提供一晶圓,其 中曰曰圓具有主動表面以及配置於主動表面上之多個焊 墊’接著’提供-焊料,以於焊墊上分卿成—焊料塊, 其中焊料包括-助㈣、—金屬合金粉末以及塗覆於金屬 合金粉末表面之一有機保護材,且有機保護材適於在210 C〜240Ϊ之溫度下揮發;之後’迴焊焊料塊,以使有機保 護材揮發,並形成多個凸塊。 .在本發明之較佳實施例中,上述形成焊料塊的方法如 下·首先,於晶圓上形成一罩幕層,且罩幕層具有多個開 口 ’用以暴露出焊墊;接著,將焊料填入開口内,以形成 13094/¾¾^^ 『料塊;之後’移除罩幕層。此外’上述之罩幕層例如是 、用板或圖案化之感光細。另外,在形成上述之焊料塊之 前,更例如可於焊墊上分別形成一球底金屬層。 基於上述,本發明之製作凸塊之焊料與凸塊製程係於 金屬合金粉末表面塗覆一有機保護材,用以防止金屬合金 tf?外界接觸而氧化’且此有機賴材可在歷經例如迴 焊等高溫製程時揮發,而不會殘留於焊料内。因此,藉由 此有機保護材將可有效降低助焊劑之使用量,並可減^凸 塊在迴焊後可能產生之純,且選雜使職酸性之助焊 劑,有助於提高凸塊之可靠度與凸塊製程之良率。 ,為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實酬,魏合職圖式,作詳細說 明如下。 【實施方式】 睛參考圖1A〜1F,其依序繪示本發明之一種凸塊製 程的示意圖。 首先,如圖1A所示,提供一晶圓100,其中晶圓1〇〇 ^有一主動表面100a,且主動表面l〇〇a上係配置有多個 坏塾上02(圖中僅繪示一個)以及一保護層1〇4。保護層1〇4 係覆,主動表面100a,並藉由開口 1〇4a暴露出焊墊1〇2。 在一實施例中,焊墊的材質例如是鋁(A1)或銅(Cu), 而保護層104之材質例如是氮化碎(SiNx)。 接著’如圖1B所示’於焊墊1〇2上形成球底金屬層 〇6其例如疋由黏著層(adhesion layer) 106a、阻障層 1309说 fdoc (barrier layer)l06b 以及沾附層(wetting layer)106c 所構成。 其中,黏著層106a係配置於焊墊102之表面,其材質例如 是鈦(Ti)、鋁(A1)或钽(Ta)等,而阻障層i〇6b係配置於黏著 層106a上,其材質例如是鎳釩合金,且沾附層1〇6c係配 置於阻P导層l〇6b上,其材質例如是銅。此外,形成上述之 黏著層106a、阻障層i〇6b以及沾附層i〇6c的方法例如是 錢鍍法(sputtering)或蒸鍍法(evap〇rati〇n)。在一較佳實施例 中,當焊墊102的材質秀鋁時,則球底金屬層1〇6之黏著 層106a/阻障層l〇6b/沾附層l〇6c之堆疊結構較佳例如是由 鋁/錄鈒合金/銅所組成。此外,當焊墊1〇2的材質是銅時, 則球底金屬層106之黏著層i〇6a/阻障層i〇6b/沾附層l〇6c 之堆疊結構較佳例如是由鈦/鎳鈒合金/銅所組成。 然後’如圖1C所示’於晶圓1〇〇上形成一罩幕層11〇, 其中此罩幕層11 〇具有多個開口 11 〇a(圖中僅緣示一個), 用以暴露出焊墊102上的球底金屬層1〇6。在一實施例中, 罩幕層110例如是一網板(stencil),其材質例如是金屬。在 另一實施例中,罩幕層11〇亦可以是圖案化之感光薄膜 (photo film) ’例如光阻材料(photoresist),而形成此罩幕層 110的方法例如是於晶圓1〇〇上全面性的形成一感光材料 層(未繪示),並經由曝光、顯影等步驟來圖案化此感光材 料層(未繪示),以形成具有開口 110a之罩幕層11〇。 之後,如圖1D所示,藉由印刷(printing)的方式,在 罩幕層110的開口 ll〇a内填入焊料,以形成焊料塊112。 值得注意的是,本發明所使用之焊料例如是由助焊劑、金 工3〇941 屬合金粉末以及有機保護材所組成,其中金 外’有機保護材係包覆於金屬合金粉末表δ 合金粉末與外界隔絕。在一較佳實 施例中, ,例如是含热的錫錯合金或不含船的錫c: 外,古撒/21雄J·丄〆,h U /V ΗΪ A…. σ金·專。此 可以化學式(1)表示如下:
’用以將金屬 此有機保護材 其中^如是芳基(Aryl)或C0〜C7之烧基(Alkyl),而x ^如疋氫(Η)、氣(Cl)i^氧化mNQ2),且此有機保護材例 如適於在21〇〇C〜240°C之溫度下揮發。 接著,如圖1E所示,移除罩幕層11〇,其中若罩幕層 11〇係網板,則可直接將其自晶圓1〇〇上取下,而若罩^ 層係感光薄膜,則去除此罩幕層110 由蝕刻液將罩幕層110去除。 疋稭 θ然後,如圖1F所示,進行一迴焊製程,其中由於迴 谭時之工作溫度係高於有機保護材揮發的溫度(2KTC〜 =〇c) ’因此在迴谭的過程中,有機保護材將揮發,而剩 餘之焊料塊112將形成球狀之凸塊m。 ^t、/值彳于一提的是,在本發明之其他實施例中,亦可選擇 進行坦焊的動作,以初步形成球狀之凸塊L再將罩 層110移除。此外’在移除罩幕層11〇之後,更可再對 I309f4^fd〇( 凸塊進行另一道迴焊製程,以使凸塊114的結構更為完整。 綜上所述,本發明所提出之焊料係在金屬合金粉末之 外圍包覆有機保護材,用以避免金屬合金粉末因與外界接 觸而氧化,其_由於有機保護材會在高溫下揮發,因此在 經過迴焊製程之後,有機保護材並不會殘留於凸塊内。如 此來,不僅可有效降低焊料内之助焊劑的使用量,減少 迴焊後可此在凸塊内產生之空孔。此外,更由於本發明可 =金屬合金粉末提供良㈣抗氧化賴,麟迴焊爐内限 ίΐΐΠΐ對增加’故可減少氮氣之使用,進而節省 凸塊之可靠度’並具有較佳之製程良率與i 雖然本發明已以較佳實施例揭露如 限定本發明,任何熟習此技藝者,在不 非用以 和範圍内,當可作些許之更動與潤飾,因 精神 式簡單說明】 圖。圖^ 1F依序鱗示本發明之—種凸塊製程的 【主要元件符號說明】 100 .晶圓 100a :主動表面 102 :焊墊 104 :保護層 範圍當視後社申請專利範騎界定 本J之保護 【圖式簡單說明】 意 I30944i5wf.doc 106 :球底金屬層 106a :黏著層 106b :阻障層 106c :沾附層 110 :罩幕層 110a :開口 112 :焊料塊 114 :凸塊
Claims (1)
1309445 :. 14272twfl.doc/0〇6
96-1-4 十、申請專利範園·· h種製作凸塊之焊料 一助焊劑; ,其主要組成包括: 一金屬合金粉末;以及 有機保護材’塗覆於該金屬合金粉末表面 該金屬粉末的氧化。 以避免 2. 如巾請專利範_丨項所述之製作凸塊之 中該金屬合金粉末之材質包括含錯合金或無錯合金。 3. 如申請專利範圍第i項所述之製作凸塊之焊料 中該金屬合金粉末之材質包括錫鉛合金或錫銀銅合金 4. 如申請專利範圍第1項所述之製作凸塊之焊料 中該有機保護材之化學式(1)表示如下: 其 其 其
(1) 其中,R包括芳基(Aryl)或C0〜C7之烷基(Alkyl),而X包 括氫(H)、氯(C1)或二氧化氮(N〇2)。 5. 如申請專利範圍第〗項所述之製作凸塊之焊料,其 中該有機保護材適於在21(Tc〜240。(:之溫度下揮發。 6. —種凸塊製程,包括: &供一曰曰圓,其中該晶圓具有一主動表面以及配置於 該主動表面上之多數個焊墊; 13 1309445 14272twfl.doc/006 96-1-4 中該=二該些:r分別形成-焊料塊,其 以及 心避免該金屬粉末氧化之-有機保護材; 迴焊該些焊料塊,以使該有機 數個凸塊。 刊评知,亚形成多 7. 如申請專利範圍第6項所述 該些焊料塊的方法包括: 尾I釦,其中形成
口,=露圓二=幕層’且該罩幕層具有多數個開 ==該些㈣’以形成該些焊料塊、 8. 如申請專利範圍第7項所述之凸塊製裎, 幕層包括網板或W案化之感光薄膜。 〃中該軍 9. 如申請專利範圍第6項所述之凸塊製裎,耸 成該些焊料塊之前,更包括於該些焊墊上分 二在形 金屬層。 形成〜球底
10·如申請專利範圍第6項所述之凸塊製程,发 機保護材適於在21(Tc〜240〇C之溫度下揮發。"中該有 14
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093128686A TWI309445B (en) | 2004-09-22 | 2004-09-22 | Solder for manufacturing bumps and bumping process |
US11/231,265 US20060108693A1 (en) | 2004-09-22 | 2005-09-19 | Solder for fabricating solder bumps and pumping process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093128686A TWI309445B (en) | 2004-09-22 | 2004-09-22 | Solder for manufacturing bumps and bumping process |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200611352A TW200611352A (en) | 2006-04-01 |
TWI309445B true TWI309445B (en) | 2009-05-01 |
Family
ID=36460198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093128686A TWI309445B (en) | 2004-09-22 | 2004-09-22 | Solder for manufacturing bumps and bumping process |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060108693A1 (zh) |
TW (1) | TWI309445B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10043707B2 (en) * | 2012-10-16 | 2018-08-07 | Qorvo Us, Inc. | Additive conductor redistribution layer (ACRL) |
US9620580B2 (en) * | 2013-10-25 | 2017-04-11 | Mediatek Inc. | Semiconductor structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010042779A1 (en) * | 2000-02-08 | 2001-11-22 | Hitoshi Amita | Solder paste |
US6756294B1 (en) * | 2002-01-30 | 2004-06-29 | Taiwan Semiconductor Manufacturing Company | Method for improving bump reliability for flip chip devices |
-
2004
- 2004-09-22 TW TW093128686A patent/TWI309445B/zh not_active IP Right Cessation
-
2005
- 2005-09-19 US US11/231,265 patent/US20060108693A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW200611352A (en) | 2006-04-01 |
US20060108693A1 (en) | 2006-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7501311B2 (en) | Fabrication method of a wafer structure | |
US9070671B2 (en) | Microelectronic flip chip packages with solder wetting pads and associated methods of manufacturing | |
US20060094224A1 (en) | Bumping process and structure thereof | |
EP1032030A2 (en) | Flip chip bump bonding | |
TW201044567A (en) | Light sensor chip | |
JPH05218043A (ja) | 金属接点パッド形成方法及び金属接点ターミナル形成方法 | |
WO2000010369A1 (fr) | Realisation de bossages de soudure, methode de montage d'un dispositif electronique et structure de montage pour ce dispositif | |
US7659193B2 (en) | Conductive structures for electrically conductive pads of circuit board and fabrication method thereof | |
JP2006278551A (ja) | 半導体装置及びその製造方法 | |
US20090236738A1 (en) | Semiconductor Device and Method of Forming Oxide Layer on Signal Traces for Electrical Isolation in Fine Pitch Bonding | |
US6617237B1 (en) | Lead-free bump fabrication process | |
JP2000216196A (ja) | 半田接合方法並びに電子装置及びその製造方法 | |
JP2006173143A (ja) | 配線基板及びその製造方法 | |
US7341949B2 (en) | Process for forming lead-free bump on electronic component | |
TW571411B (en) | Bumping process | |
US7473476B2 (en) | Soldering method, component to be joined by the soldering method, and joining structure | |
TW578281B (en) | Bumping process | |
TWI309445B (en) | Solder for manufacturing bumps and bumping process | |
US6897141B2 (en) | Solder terminal and fabricating method thereof | |
JP2007123577A (ja) | 半導体装置 | |
TWI236093B (en) | Bumping process | |
US6720244B2 (en) | Bump fabrication method | |
JP2005150417A (ja) | 半導体装置用基板及びその製造方法並びに半導体装置 | |
JPH07235763A (ja) | 電子回路の製造方法 | |
US20030164204A1 (en) | Solder paste for fabricating bump |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |