TWI304661B - - Google Patents
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- Publication number
- TWI304661B TWI304661B TW95116644A TW95116644A TWI304661B TW I304661 B TWI304661 B TW I304661B TW 95116644 A TW95116644 A TW 95116644A TW 95116644 A TW95116644 A TW 95116644A TW I304661 B TWI304661 B TW I304661B
- Authority
- TW
- Taiwan
- Prior art keywords
- anode
- dot
- emitting diode
- tin oxide
- indium tin
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005115 demineralization Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095116644A TW200743237A (en) | 2006-05-11 | 2006-05-11 | Structure for enabling organic light-emitting diode (OLED) to selectively light by indium tin oxide (ITO) anode containing nickel points and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095116644A TW200743237A (en) | 2006-05-11 | 2006-05-11 | Structure for enabling organic light-emitting diode (OLED) to selectively light by indium tin oxide (ITO) anode containing nickel points and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200743237A TW200743237A (en) | 2007-11-16 |
| TWI304661B true TWI304661B (enrdf_load_stackoverflow) | 2008-12-21 |
Family
ID=45070988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095116644A TW200743237A (en) | 2006-05-11 | 2006-05-11 | Structure for enabling organic light-emitting diode (OLED) to selectively light by indium tin oxide (ITO) anode containing nickel points and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200743237A (enrdf_load_stackoverflow) |
-
2006
- 2006-05-11 TW TW095116644A patent/TW200743237A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200743237A (en) | 2007-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |