TWI300514B - - Google Patents

Description

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RELATED APPLICATIONS This patent application filed and claims priority on the basis of the Japanese Patent Application No. 2000-394354, filed on Dec. 26, 2000, and N 〇 2 〇 〇 11299, January 19, 2001. The contents are listed below for reference. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus and a processing method of a substrate. Specifically, it is related to a treatment method using a coating film, a heating device for coating a film, a heat treatment method for other heating devices, and a photoresist pattern forming method related to photolithography. 2. Description of Related Art A photoresist pattern is used for element region formation, electrode wiring processing, and the like for semiconductor device manufacturing. This photoresist pattern is generally formed in the following manner. First, after a photoresist coating film is formed on a semiconductor wafer, a heat treatment called prebake is performed. The purpose of this prebaking is to volatize the flux within the photoresist. Next, a specific pattern exposure was performed on the photoresist film to perform copying. As the semiconductor element is miniaturized, the photolithography step is required to have a higher resolution. For this requirement, the light source for exposure used has a short wavelength. In the light touch, the KrF excimer laser (wavelength · 248 nm) is widely used as a light source for exposure. On the other hand, the photosensitive resin (photoresist) material of the copy pattern is also subjected to review and practical use of a photoresist called a chemical amplification type photoresist, in accordance with the short wavelength of the light source for exposure. The chemically amplified photoresist contains an acid generator which generates an acid due to exposure. The acid generated by the exposure will decompose the resin (positive type), or the shape -4 · This paper size applies to the S @家标准(CNS) A4 specification (210 X 297 public) A """'- A7 B7 1300514

5. Description of the invention (in the form of a bridge (negative type). In the subsequent development step, the property which changes its solubility to the developer is utilized. Although the chemically amplified photoresist has the advantage of good resolution, It has a negative impact on the environment, that is, the acid reacts with the alkaline substances in the atmosphere to passivate, resulting in deterioration of the pattern shape or resolution, etc. In order to prevent such deterioration, environmental control must be implemented. General environmental control is implemented. A chemical filter or the like is provided in the coating and developing device for processing such as photoresist coating and development. On the other hand, after the exposure step, the chemically amplified photoresist is often referred to as PEB (Post Exposure Bake). The heat treatment step of the exposure. The purpose of applying PEB is to produce the acid generated by the diffusion exposure step. After the PEB treatment step, the chemical amplification type photoresist is exposed to the developer to form a desired photoresist pattern. Chemically amplified photoresists, in addition to the aforementioned acid passivation, will disappear in the PEB treatment due to acid evaporation. The method of reducing the acid evaporation of PEB treatment has different methods from the past. For example, after applying a photoresist, the pre-baking temperature for the purpose of volatilizing the solvent is higher than usual, and the PEB temperature is lower than generally, and the evaporation of the acid is lowered ("Effect of acid evaporation in Chemically Amplified resists on Insoluble layer formation" Journal of Photopolymer Science and Technology Vo 1, 8, Number 4 (1995) P.561-570: hereinafter referred to as well-known example 1), or PEB treatment at a pressure higher than normal pressure to reduce acid evaporation The method (Japanese Patent Laid-Open No. Hei-38644, hereinafter abbreviated as the known Example 2). The amount of acid evaporation at the time of PEB is reduced by the above-mentioned known example 1. However, it is carried out under conditions which greatly deviate from the optimum temperature condition (general conditions). Pre-baking treatment and PEB treatment, it is not possible to fully exert the exposure of the photoresist -5 - This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)

Binding

1300514 A7 B7 V. Description of invention (3) and performance of focus margin (safety factor). Further, in the PEB treatment, as shown in Fig. 65, the heating means must be such that gas and fine particles generated during heating can be prevented from adhering to the chamber to prevent it from being a source. The heating device has an air introduction port 6501 provided on one side of the chamber 6500 and an exhaust port 6502 provided on the other side opposite thereto. The gas 6504 flows between the air introduction port 6501 and the exhaust port 6502 along the semiconductor wafer W on the glow plate 6503. In this way, airflow can be generated in the chamber. However, as shown in Fig. 66, the acid evaporated in the PEB can be transported to the downstream side by the air flow in the direction of the arrow, and attached to the wafer again. Therefore, the wafer surface concentration of the wafer located at the most upstream position and the wafer located at the downstream position may differ with respect to the gas flow. Therefore, an error occurs in the size of the photoresist in the crystal face after the development process. Further, in the above-mentioned known example 2, although the evaporation of the acid can be reduced, there is no countermeasure against the re-adhesion of the evaporated acid. Since the evaporated acid adheres to the semiconductor wafer again, it is difficult to eliminate the dimensional change of the photoresist in the wafer surface after the development process. SUMMARY OF THE INVENTION According to a first aspect of the present invention, a heating device for a photoresist layer is provided, comprising: a chamber containing an internal space; and a substrate on which a substrate having a photoresist film is supported in the chamber a heating plate for heating the substrate to be processed, a partition member disposed to face the chamber on the mounting surface, and a partition space to divide the internal space into the first and second spaces by the partition member. Connect the plurality of holes in the first and second spaces and the above-mentioned mounting surface is equipped with -6- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 Description of the invention is placed in the first space and the foregoing The space 2 is provided with an air flow forming mechanism for forming a gas flow for the purpose of discharging the hair of the photoresist film. According to a second aspect of the present invention, there is provided a method of processing a photoresist, comprising the steps of: forming a photoresist film on a substrate to be processed, and performing the substrate on which the photoresist film has been formed in the chamber; a step of heating, the partitioning member divides the chamber into a second space and a second space, and has a plurality of holes communicating between the first and second chambers, and the substrate to be processed is placed in the i-th chamber and is During the heating period, the evaporating material generated by the substrate to be processed is flowed through the plurality of holes of the partition member to the second space, and the gas is leaked from the second space by the gas flow. An exposure step capable of forming light to form an exposed region having a latent image pattern, and a developing step of selecting a portion of the aforementioned photoresist film and forming a desired pattern on the substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing a heating apparatus according to a first embodiment of the present invention. Fig. 3 is a pattern obtained when a mask for exposure is copied onto a wafer. 4 is an enlarged view of a line pattern area of the pattern of FIG. Fig. 5 is a view showing a state in which a wafer is exposed on a wafer. Fig. 6 is a diagram showing the in-plane distribution of the wafer obtained by the heating device according to the embodiment of the present invention. Figure 7 is a schematic sectional view of a heating device according to a second embodiment of the present invention;

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Fig. 8 is a graph showing the relationship between the secret cell porosity and the re-adhesion of the evaporated material, the relationship between the adsorption plate and the soaking plate and the evaporation distance of the acid. Fig. 9 is a schematic plan view showing a heating device according to a third embodiment of the present invention. Fig. 1 is a schematic cross-sectional view of a heating apparatus according to a fourth embodiment of the present invention. Fig. 11 is a schematic cross-sectional view showing a heating apparatus according to a fifth embodiment of the present invention. Fig. 12 is a perspective view of a sixth embodiment of the present invention. Schematic cross-sectional view of the heating device 13 is a diagram of the plate member. Fig. 14 is a schematic cross-sectional view of a heating apparatus according to a seventh embodiment of the present invention. Fig. 15 is a schematic cross-sectional view showing a heating apparatus according to an eighth embodiment of the present invention. Figure 16 is a cross-sectional view showing a heating device according to a ninth embodiment of the present invention. Figure 17 is a schematic cross-sectional view showing a heating device according to a tenth embodiment of the present invention. The positional relationship diagram of the exposed wafer. Fig. 19 is a view showing the relationship between the exposure amount and the size of the photoresist line in the substrate processing method according to the eleventh aspect of the present invention. Figure 20 shows the arrangement of the heating unit group and the pattern position of the wafer transfer arm. - 8 - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 V. Description of the invention (6) Figure. Fig. 21 is a top view from the top to the bottom of the state in which the wafer is transported to the heating device for PEB. Fig. 22 is a diagram showing the arrangement of the heating unit group and the pattern positional relationship of the wafer transfer arm. Fig. 23 is a top view from the top to the bottom of the state in which the wafer is transported to the heating device for PEB. Fig. 24 is a top plan view showing the state in which the wafer is transported to the heating device for PEB. Fig. 25 is a view showing the relationship between the PEB treatment temperature and the size of the photoresist line in the method for forming a photoresist pattern according to the twelfth embodiment of the present invention. Figure 26 is a diagram showing the positional relationship of the airflow direction and the exposed wafer. Figure 27 is a diagram showing the positional relationship of the airflow direction and the exposed wafer. Fig. 28 is a diagram showing the pattern relative positional relationship of the airflow in the exposure region and the PEB. Fig. 29 is a schematic diagram showing the pattern relationship between the in-wafer position X and the developed photoresist pattern (line size) at the exposure amount D. Fig. 30 is a graph showing the relationship between the pattern size and the exposure amount in the vicinity of the exposure amount D. Figure 31 is a pattern diagram of the position X of the wafer and the amount of exposure. Figure 32 is a pattern diagram of the position X of the wafer and the scanning speed. Figure 33 is a view showing the configuration of a projection exposure apparatus of a step-by-step scanning method. Fig. 34 is a schematic transmission rate distribution diagram of the ND filter 3303 for irradiation amount adjustment. Figure 35 is a schematic view of a portion of the exposed area. Figure 36 is a graph showing the relationship between exposure amount and line size. Fig. 37 is a schematic view showing a light irradiation system for the purpose of adjusting the exposure amount. • 9 - This paper scale applies to China National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 V. Invention Description (7) Figure 38 shows the exposure area group 3801 formed on the wafer and the illumination of the illumination during correction A patterned positional relationship diagram for region 3802. Figure 39 is a diagram showing the relationship between the direction of the gas flow and the position of the exposed wafer. Fig. 40 is a graph showing the relationship between the amount of irradiation at the time of correction and the difference in size between the outermost (uppermost) exposure area and the inner (downstream) exposure area. Figure 41 is a view showing another embodiment of a substrate processing method according to a seventeenth embodiment of the present invention. Figure 42 is a diagram showing the relationship between the position X in the wafer and the irradiation energy of the embodiment shown in Figure 41. Fig. 43 is a view showing a state in which a wafer is exposed on a wafer. Figure 44 is a diagram showing the relationship between the direction of the gas flow and the position of the exposed wafer. Fig. 45 is a view showing a state in which an exposed wafer is placed on a wafer. Fig. 46 is a graph showing the relationship between the area of the unexposed area and the amount of EB irradiation necessary for the correction of the change in the pattern size. 47A and 47B are schematic views showing a method of supplying a developer. Figure 48 is a graph showing the relationship between the amount of exposure and the size of the pattern. Fig. 49 is a graph showing the relationship between the discharge amount of the developer and the pattern size. Figure 50 is a positional view of the liquid supply nozzle. Fig. 51 is a graph showing the relationship between the position of the nozzle and the discharge amount of the developer. Figure 52 is a plot of the distance between the wafer and the nozzle (marked as a gap in the figure) and the pattern size. · Figure 53 is a diagram of the relationship between position and clearance. Figure 54 is a graph showing the relationship between the nozzle scanning speed and the pattern size. Figure 55 is a graph showing the relationship between the nozzle position and the scanning speed. -10- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514

Figs. 56A and B are schematic views showing a state in which a gas stream is blown out by a gas jet nozzle. 57A, B, and C illustrate the thinning of the developer. Figure 58 is a graph showing the relationship between the flow rate and the pattern size. 59A and B are schematic views showing a state in which a substrate is heated by a hot plate. Figure 60 is a graph showing the relationship between the temperature of the developer and the pattern size. Fig. 61A and Fig. B are schematic views showing a method of supplying a developer. 62A, B, and C are schematic diagrams of a method of controlling the amount of discharge by a nozzle. Fig. 63 is a schematic view showing a method of supplying ozone water. Fig. 64 is a diagram showing the relationship between the pattern size and the supply time of the outer edge portion. • Figure 65 is a schematic cross-sectional view of a conventional heating device. Fig. 66 is a view showing the relationship between the direction of the air flow and the exposure wafer in the conventional heat treatment. Fig. 67 is a view showing whether or not the in-plane distribution of the pattern copying result obtained by heat treatment using a conventional heating device is good. DETAILED DESCRIPTION OF THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, constituent elements having substantially the same functions and configurations will be denoted by the same reference numerals, and repeated explanation will be carried out only when necessary. Fig. 1 is a plan view showing a substrate processing apparatus according to each embodiment of the present invention. This substrate processing apparatus includes a coating and developing device 1〇1 and an exposure device 1〇2. The coating developing device 101 includes a wafer stage 103, a heating device 1〇4, a coater 1〇5, a development block 106', and an interface 1〇7. The configuration of each part is shown in the figure, but it is not limited to this method. (1st Embodiment) -11 - This paper size is applied to the following national standards ((:; 1^3) A4 size (210 X 297 mm) 1300514 A7 B7 V. Invention description (/ ). In the form, the same chemically amplified photoresist is also used. After the prebaking, the wafer W is cooled to room temperature. The wafer W is moved to a KrF excimer laser having a wavelength of 248 nm (far infrared ray The exposure apparatus which is a light source is subjected to reduction projection exposure by a mask for exposure. Fig. 3 is an enlarged view of a pattern obtained by copying the exposure mask used in the embodiment to the wafer W in the exposure apparatus. In the figure, one exposure region 320 (hereinafter simply referred to as an exposure wafer) includes a left half line pattern region 32 and a flat exposure region 322 which is completely free of photoresist. Fig. 4 is an enlarged view of the line pattern region 321. In the middle, the 401-series spacer and the 402-series line portion. As shown in Fig. 4, the line pattern region 321 is arranged such that the line size = 170 nm, the interval size = 90 nm, and the interval of the repeating pattern = 260 nm. As shown in FIG. 5, the exposed wafer 320 is copied on the wafer W into a vertical 11 X horizontal 13 Then, after the exposure, the wafer W is transferred to the heating device of the embodiment, and placed on the heat equalizing plate 202 at intervals of 0.1 nm. Then, the second space portion is placed. The flow 217 flowing in a certain direction in 212 is subjected to PEB treatment at 140 ° C for 90 seconds. After the PEB treatment, the wafer W is cooled to room temperature, and the wafer W is moved to a developing unit to be implemented. After 60 seconds of alkali development treatment, after completion of the development treatment, a pure water cleaning treatment and a spin drying treatment are performed to form a photoresist pattern. Hereinafter, the in-plane distribution of the resist pattern size obtained by using the heating device of the present embodiment is obtained. The comparison with the results of the PEB treatment performed by the conventional heating device is shown in Fig. 65. -14- The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Description of invention (12 Fig. 67 is an in-plane distribution of the result of pattern copying obtained by using a conventional heating device. The oblique line in the figure shows the exposed wafer, which is SEM (Scanning Electron Microscope, scanning electron microscope) from above. When it is observed, it is judged as NG. That is, the photoresist pattern is not displayed. As shown in Fig. 67, the exposed wafer located on the most upstream side is NG with respect to the airflow at the time of PEB processing. Since the exposure amount of each wafer is different, that is, when the conventional heating device performs the PEB treatment, the gas stream 6504 containing the acid evaporated by the photoresist film flows from the left to the right as the direction of the arrow in Fig. 66. The acid vaporized by the exposed wafer at the most upstream position of the gas stream is transported to the downstream side by the gas stream and reattached to the exposed wafer on the downstream side. Therefore, the amount of acid is the (acid produced) - (evaporated acid) + (re-attached acid). However, the wafer located at the most upstream position relative to the gas flow has no actual exposure (less reattachment of acid) than the wafer located downstream. Therefore, although the same energy (exposure irradiation amount and heating amount of PEB) is supplied to each of the exposed wafers 6705, the line size of the photoresist pattern formed after development differs. That is, when a positive photoresist is used, the exposure wafer located at the most upstream will be larger. Fig. 6 is a plan view showing the in-plane distribution of the pattern copying result obtained by using the heating device according to the embodiment. As shown in Fig. 6, no exposed wafer judged as NG was observed, and a good pattern copying result was obtained. Further, in the present embodiment, the reason why a porous ceramic plate having a pore size of 50 μm and a porosity of 40% is used is as follows. Fig. 8(a) is a graph showing the relationship between the porosity of the porous ceramic plate having a pore diameter of 50 μm and the re-adhesion amount of the evaporated acid (based on the porosity of 0). As can be seen from the figure, because the porosity is 40%, the re-sticking effect is -15-. The paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm). 1300514 A7 B7 V. Invention Description (14) . The halogen lamp 731 is subjected to output control by using a temperature of a thermoelectric pair (not shown) buried in the heat equalizing plate 202, and is adjusted to a desired temperature (140 °C). In the present embodiment, a porous ceramic plate 209 having a pore diameter of 100 μm and a porosity of 50% is used. Next, the crucible treatment and the formation of the resist pattern using the above heating device will be described. First, a coating film used as an antireflection film is formed on the wafer W by a spin coating method. Next, drying treatment was carried out at 190 ° C for 60 seconds to form an anti-reflection film having a thickness of 60 nm. After applying a positive-type chemically amplified photoresist to the wafer W, pre-baking was performed at 140 ° C for 90 seconds. In this manner, a photoresist film having a thickness of 400 nm is formed on the antireflection film. After the prebaking, the wafer W is cooled to room temperature. The wafer W is moved to an exposure apparatus using a KrF excimer laser having a wavelength of 248 nm as a light source, and the projection exposure is reduced by the exposure mask. As shown in Fig. 5, through the exposure mask, the exposed wafer containing the 150 nm line and the spacer pattern is copied onto the wafer W to have a vertical 11X horizontal 13 configuration, and a latent image is formed. Next, after the exposure, the wafer W is transferred to the heating device of the embodiment and placed on the heat equalizing plate 202. Then, the airflow 2'17 flowing in a predetermined direction in the second space portion 212 is subjected to PEB treatment at 40 ° C for 90 seconds. After the PEB treatment, the same treatment as in the first embodiment is carried out to form a photoresist pattern. In the second embodiment, the photoresist ruler -17 in the plane of the wafer W after development is developed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 _____B7 V. Description of the invention ( 15) The result of inch is as follows. That is, the in-plane dimensional error of the 150 nm line and the spacer pattern is greatly reduced from the 9. 7 post (3σ) of the conventional heating device to 4.3 nm. Further, in the first and second embodiments described above, the line patterns, the lines, and the space patterns will be described. However, it is not limited to these patterns, and other patterns such as a hole pattern can obtain the same effect. In addition, in the first and second embodiments, the numerical values of the pore diameter and the porosity of the porous ceramic plate are given as an example. However, the numerical value is not necessarily limited. For example, the optimum porosity should be determined by the porosity ratio shown in Fig. 8A and the re-adhesion amount of the evaporated acid. (Third Embodiment) A heating device according to a third embodiment of the present invention and a substrate processing method according to the above-described first embodiment will be described with reference to Fig. 9 . The same components as those in the first embodiment are not described, and only the different portions will be described. In the third embodiment, the adsorbing member is used to adsorb the evaporated product. Fig. 9 is a schematic cross-sectional view showing a heating device according to a third embodiment. In the chamber 208, an adsorption member 940 opposed to the upper portion of the soaking plate 202 is disposed. The distance between the adsorption member 940 and the aforementioned heat equalizing plate 202 is 〇.5 mm. The adsorbing member 940 is supported by a plurality of support pins 213. The adsorbing member 940 is a single crystal raft plate whose surface has been ground. Further, an oxide such as ceramics, alumina or ash quartz, or a nitride itself may be used. At the same time, it is also possible to use an oxide film or a nitride film on the surface of these members. The evaporated material evaporated from the wafer W in the heat treatment will be adsorbed close to the -18·^ paper scale applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '~ 1300514 A7 _B7_._ V. Description of the invention (16) The wafer W is disposed on the surface of the adsorption member 940. Next, the PEB treatment and the formation of the resist pattern using the above heating device will be described. The exposure is the same as in the first embodiment. As in the first embodiment, after exposure, the exposed wafer is copied onto the wafer W in a vertical 11 X horizontal 13 configuration to form a latent image. After the exposure, the wafer W was transferred to the heating apparatus of the present embodiment, and placed on the heat equalizing plate 202 at intervals of 0.1 mm. Then, the PEB treatment was carried out at 140 ° C for 90 seconds. After the PEB treatment, the same treatment as in the first embodiment was carried out to form a photoresist pattern. Fig. 6 is a plan view showing the in-plane distribution of the pattern copying result obtained by using the heating device according to the embodiment. That is, the exposed wafer judged to be NG was not observed in the plane of the wafer W, and a good pattern copying result was obtained. Further, the distance (interval) between the adsorption member and the heat equalizing plate of the present embodiment was 0.5 mm. The reason is explained below. Fig. 8B is a graph showing the relationship between the distance d between the adsorption member and the heat equalizing plate, and the diffusion distance of the acid which is evaporated and reattached (based on the value at intervals of 7.5 mm). The smaller the interval, the smaller the diffusion distance of the acid, and relatively, the interval must be precisely controlled (the evaporation distance is misaligned in the W plane of the wafer). With this in mind, choose a relatively easy to control interval of 0.5 mm. As described above, according to the present embodiment, in the PEB treatment step, since the acid evaporated from the photoresist film adsorbs the smoke adsorbing member 940, the evaporated acid does not adhere to the wafer W again. Therefore, in the wafer W surface, the evaporation of the acid is not adhered to the wafer W again, and the substantial exposure amount fluctuates, and the uniformity of the size of the photoresist in the wafer W surface can be improved. In addition, in the PEB processing step, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applicable to the paper scale. 1300514 A7 B7 5. Invention Description (18) In the third and fourth embodiments, A heater is mounted on the back side of the single crystal raft used for the adsorption member. With this heater, after the wafer W is taken out from the heating device, the single crystal chip can be heated by the heater. This heating can also be utilized to remove the adsorbed acid and to clean the surface of the single crystal chip. At this time, it is preferable that the side surface portion of the chamber is provided with an intake hole and a vent hole to discharge the acid which is detached. (Fifth Embodiment) A heating device according to a fifth embodiment of the present invention and a substrate processing method according to the above-described first embodiment will be described with reference to Fig. 11 . The same portions as those in the first embodiment are omitted, and only the different portions will be described. Fifth Embodiment A heating device is used in a heat treatment step before a radiation energy ray, specifically, a prebaking step after a photoresist coating step. Fig. 11 is a schematic cross-sectional view showing a heating device according to a fifth embodiment. In the present embodiment, the inductive interval between the hot plate 202 and the wafer W is 0.5 nm. The chamber 208 includes a heat equalizing plate 202, a casing 201, and a top plate 207. Above the hot plate 202 in the chamber 208, a proximal plate 1107 is disposed in a relatively close and very close manner. The distance between the proximal plate 1107 and the soaking plate 202 is 2.0 mm. In the upper portion of the proximal plate 1107, a heater 1109 for heating the proximal plate is disposed concentrically. This heater 1109 is controlled by a temperature sensor and a temperature control unit not shown. With the control of the heater 1109, the temperature of the proximity plate 1107 can be controlled. The surface of the proximity plate 1107 facing the wafer W is mirror-polished. The proximal plate 1107 is made of an aluminum product. Alternatively, those who are easy to process and have good thermal conductivity, such as SUS, can also be used. Further, a heat radiating portion (not shown) for promoting heat generation may be provided on the surface of the proximal plate 1107. Use the heat release section -21 - This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 V. Invention Description (2Γ) Prevent the formation of a 300 nm thickness photoresist film on the film. After prebaking, the wafer W is cooled to room temperature. The wafer W was moved to an exposure apparatus using an ArF excimer laser having a wavelength of 193 nm as a light source. At this time, an exposure region containing a line of 110 nm and a space pattern is formed on the wafer W by the exposure mask to form a vertical 13 X horizontal 15 to form a latent image. After the exposure, the wafer W was transferred to the heat treatment apparatus of the present embodiment, and placed on the heat equalizing plate 202 at intervals of 0.1 mm. In the heat treatment, the evaporated substance evaporated from the wafer W described above adheres to the surface of the plate member 1207. The PEB treatment was carried out at 110 ° C for 90 seconds. After the PEB treatment, the same treatment as in the first embodiment is carried out to form a photoresist pattern. As a result of measuring the size of the photoresist line in the W plane of the wafer after development, the in-plane dimensional error of the 110 nm line and the spacer pattern was reduced by about half compared with the conventional PEB processing apparatus. As described above, according to the present embodiment, in the PEB treatment step, the acid evaporated from the photoresist film is adsorbed to the plate member 1207, and the evaporated acid does not adhere to the wafer W again. Therefore, in the wafer W surface, the evaporation of the acid is not adhered to the wafer W again, and the substantial exposure amount fluctuates, and the uniformity of the photoresist size in the wafer W surface can be improved. (Seventh Embodiment) A heating device according to a seventh embodiment of the present invention and a substrate processing method according to the first aspect of the invention will be described with reference to Fig. 14 . The same portions as those in the first embodiment are omitted, and only the different portions will be described. Seventh Embodiment A heat treatment is performed in the presence of an electric field. Fig. 14 is a schematic cross-sectional view showing a heating device according to a seventh embodiment. -24- This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) 1300514 A7 B7 V. Inventive Note (22) In the chamber 208, the electrode member opposite thereto is disposed above the above-mentioned heat equalizing plate 202 1450. The distance between the heat equalizing plate 202 and the aforementioned hot plate 202 is 3.0 mm. The electrode member 1450 is supported by a plurality of support pins 214. The electrode member 1450 is made of SUS. Alternatively, a metal or a semiconductor having acid resistance and conductivity can be used. Further, the electrode member 1450 may be covered with an insulating film such as an oxide film or a nitride film on the surface opposite to the wafer W. A voltage is applied between the heat equalizing plate 202 and the electrode member 1450 by the power source P. By this applied voltage, an electric field in the vertical direction (up and down direction on the paper) can be generated between the heat equalizing plate 202 and the electrode member 1450 in the heat treatment. In the present embodiment, a ground potential is applied to the heat equalizing plate 202, and a negative potential is applied to the electrode member 1450. However, this potential relationship is only required if the potential of the above-mentioned electrode member 1450 is relatively lower than the potential of the above-described heat equalizing plate 202. With the generated electric field, the positively evaporating substance, e.g., acid, evaporating from the wafer W will move in the vertical direction. Then, the evaporated substance is adsorbed on the surface of the aforementioned electrode member 1450. Therefore, the acid evaporated from the photoresist does not adhere to the crystal W again. Next, the PEB treatment and the formation of the resist pattern using the above heating device will be described. The exposure is the same as in the first embodiment. As shown in Fig. 5, after exposure, an exposed wafer containing a line pattern of 130 nm and a spacer pattern is overprinted on the wafer W to a vertical 11 X horizontal 13 configuration, and a latent image is formed. After the exposure, the wafer W is transferred to the heating device of the embodiment, and placed on the heat equalizing plate 202. Then, a ground potential is applied to the above-mentioned heat equalizing plate 202 and a negative potential is applied to the electrode member 1450, and the Chinese National Standard (CNS) A4 specification (210 X 297 metric) is applied at 140 ° C for 90 seconds. PCT) 1300514 A7 B7 V. Inventive Description (25) The heat equalizing plate 202 applies a ground potential, and applies a positive potential to the electrode member 1450. However, this potential relationship is only required if the potential of the electrode member 1450 is higher than the potential of the heat equalizing plate 202. Since the evaporated substance evaporated from the wafer W, for example, the acid is positively charged, the acid evaporation of the photoresist can be suppressed by the high potential applied to the electrode member 1450. In the heating device according to the tenth embodiment, the applied voltage between the heat equalizing plate and the electrode member can be easily changed, and the electric field intensity can be arbitrarily changed. Therefore, the control for suppressing acid evaporation can be easily performed. Therefore, the PEB treatment using the heating device of the present embodiment makes it easy to control the acidity evaporation, so that it is easy to control the uniformity of the photoresist size. 0 In the seventh to tenth embodiments, the heat treatment is terminated, and the wafer is taken out from the heating device. Thereafter, the adsorbed acid may be removed by applying a positive potential to the electrode member, and the surface of the electrode member may be cleaned. At this time, it is preferable that the side surface of the chamber is provided with an intake hole and a vent hole to discharge the acid which is detached. The first to fourth and seventh to tenth embodiments illustrate the case where a heating device is used in the PEB processing step. However, it is of course also possible to use other steps such as a resist pattern formation such as a heat treatment step after formation of a coating film. In this way, the same effects as those of the sixth embodiment can be obtained. (Eleventh Embodiment) A substrate processing method according to an eleventh embodiment of the present invention will be described with reference to the drawings. In the exposure step of the eleventh embodiment, the exposure amount condition of each exposure wafer is set corresponding to each exposure wafer. The exposure conditions are closely related to the PEB processing steps performed after the exposure step. The PEB processing step can be carried out using a conventional heating device as shown in Fig. 65. -28- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1300514 A7 B7 V. Inventive Note (26) Until the pre-baking, it is the same as the first embodiment. Next, in the same manner as in the first embodiment, the exposure wafer having an ink line and a spacer pattern of 150 nm is formed on the wafer W to be vertically 11 X horizontally 13 to form a latent image. The exposure conditions are set as follows. The positional relationship of each exposure wafer 1801 in the PEB processing step and the air flow 1802 in the PEB processing is as shown in FIG. In Fig. 18, the exposed wafer 1801 of the wafer W can be divided into the most upstream exposed wafer 1801A on the most upstream side for the gas flow 1802 in the PEB process, and the downstream exposed wafer 1801B on the downstream side on the other side of the flow 1802. In this manner, the classification of the exposed wafer is performed, and the exposure amount on the upstream side is lower than the exposure amount on the downstream side for the above reason. 1803 is a gap. In the present embodiment, the substantial exposure amount of the exposure step is adjusted so that the most upstream exposed wafer 1801A and the downstream exposed wafer 1801B are the same. That is, the exposure amount when copying to the most upstream exposure wafer 1801A is set to be larger than the exposure amount of the downstream exposure wafer 1801B by the following manner. Fig. 19 is a graph showing the relationship between the amount of exposure and the size of the photoresist line formed by the photolithography step. The solid line in Fig. 19 is the downstream_optical wafer, and the broken line is the most upstream exposed wafer. When the exposure amount of the desired 150 nm aperture of the photoresist line size is obtained from Fig. 19, the most upstream exposed wafer 1801A is 18.55 mJ/cm2, and the downstream exposure wafer 1801B is 18.36 mJ/cm2 〇* In this way, the exposure is obtained in advance. The relationship between the amount and the size of the repaired photoresist line determines the optimum exposure conditions for each of the exposed wafers 1801. Therefore, the most upstream exposure wafers are used for different exposure conditions. The Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable to the paper scale. 1300514 A7 B7 5. Invention description (27) 1801A and downstream The exposure wafer 1801B is exposed. After this exposure step, the slit 1803 of the wafer W during the exposure step and the PEB processing step is maintained in the same direction at any time, for example, by the rotation correction on the lower side. Then, the wafer W was transferred to the above-mentioned heating device, and PEB treatment was carried out at 140 ° C for 90 seconds. After the PEB treatment, the same treatment as in the first embodiment is carried out to form a photoresist pattern. The results of measuring the size of the photoresist line in the W plane of the wafer after development are as follows. That is, the in-plane dimensional error of the 150 nm line and the interval pattern is greatly reduced to 11.4 nm (3 σ) from 5.4 nm when the exposure condition correction is not performed. In the present embodiment, the case of using one heating device for PEB is described. However, the continuous processing of the plurality of wafers W may be performed using a plurality of heating devices for PEB. At this time, in the stage before the PEB processing, the rotation correction of the wafer W is carried out correspondingly to the heating device for the PEB. The following is a description of its necessity. Fig. 20 is a view showing a pattern of a heating unit group and a wafer transfer arm ARM in a developing device, and a state in which the wafer W is transported to the HP 1-1. In Fig. 20, the heating unit group is composed of towers (TW1 and TW2) formed by two frame-shaped plural-numbered stacked structures. The PEB unit is located at HPM of TW1 and HP2-1 of TW2. Other heating units are used for, for example, heat treatment of the anti-reflection film or pre-baking after photoresist coating. Fig. 21 is a plan view from top to bottom in a state where the wafer is transported onto the HP1-1. As shown in Fig. 21, the slit 803 of the wafer W is located on the left side. The most upstream exposure wafer 1801A is normally located on the upstream side of the gas stream 1802. Next, a state in which the wafer W is transported to the HP 2-1 will be described with reference to Figs. 22 and 23 . As shown in Fig. 22, because the slit W1 of the wafer W and the phase of the transfer arm ARM-30-the paper scale are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Description of the invention (28 When the wafer W is transported to the HP 2-1 without changing the positional relationship, the slit 1803 of the wafer W is located on the right side in FIG. As a result, the most upstream exposed wafer 1801A is located on the downstream side of the gas stream 1802. That is, the positional relationship of the most upstream exposed wafer with respect to the air current 1802 is 180 degrees rotated when transported to the HP1-1 and transported to the HP2-1. Therefore, as shown in Fig. 24, when the wafer W is transported to the HP 2-1, the rotation correction must be performed at one stage before the conveyance, and then the conveyance is performed. As described above, when the plurality of wafers W are continuously processed by the PEB having the same device configuration, the rotation correction of the wafer W must be carried out correspondingly to the one of the PEB units at a stage before the heating device for the PEB is placed. It is not necessary to perform the rotation correction on the wafer W without setting the most upstream exposure wafer and the downstream exposure wafer for each wafer W. However, the steps are complicated and unrealistic. Further, in the present embodiment, the line and the interval pattern of 150 nm are described. However, the present invention is not limited thereto, and other patterns such as a hole pattern may be used. (Twelfth Embodiment) A substrate processing method according to a twelfth embodiment of the present invention will be described with reference to the drawings. In the twelfth embodiment, the heating temperature at the time of PEB processing is adjusted in accordance with the exposure wafer. It is the same as that of the first embodiment until the prebaking. Next, the exposure exposes the exposed wafer containing the 140 nm isolated line pattern onto the wafer W in a vertical 11 X horizontal 13 configuration and forms a latent image. In the present embodiment, all of the exposed wafers have the same condition in terms of the exposure amount of the copy. After the exposure, at the exposure step and at the PEB processing step, as shown in Fig. 18, the slit 1803 of the wafer W is kept in the same direction at any time, for example, by the rotation correction on the lower side. The wafer W is transferred to the aforementioned heating device, and PEB processing is performed. At this time -31 - The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm).

1300514 A7 B7 V. Inventive Note (29), set the heating conditions according to the following procedure. Figure 25 is a graph showing the relationship between the PEB processing temperature and the size of the photoresist line after development. The solid line is the downstream exposed wafer, and the dashed line is the most upstream exposed wafer. When the PEB temperature condition of 140 nm desired for the size of the photoresist is obtained from Fig. 25, the most upstream exposed wafer 1801A is 140.23 ° C, and the downstream exposed wafer 1801B is 140.00 ° C. In this manner, the optimum heat treatment temperature conditions for the respective light guiding wafers 1801 can be determined by preliminarily determining the relationship between the PEB processing temperature and the size of the repairing photoresist line. In the present embodiment, the heating conditions are set such that the heating temperature of the most upstream exposed wafer 1801A is 140.23 ° C and the heating temperature of the downstream exposed wafer 1801 B is 140.00 ° C. In this temperature setting, the higher the set temperature of the divided heater corresponding to the most upstream exposed wafer 1801A area, the better. At this time, since the heater disposed on the downstream side is also disturbed by the upstream heater, it is preferable to adjust the set temperature of the downstream heater. For example, it is preferable to perform a strict adjustment of the set temperature of each divided heater by using a thermometer or the like in which a plurality of thermoelectric-to-isothermal sensors are embedded in the wafer W. In this way, the temperature setting of the PEB process is determined and a PEB process of 90 seconds is performed. After the PEB treatment, the same treatment as in the first embodiment is carried out to form a photoresist pattern. The result of measuring the size of the photoresist line in the W plane of the wafer after development is as follows. That is, the in-plane dimensional error of the 140 nm isolated line pattern is greatly reduced to 12.1 nm at 12.3 nm (3 σ) when the exposure condition correction is not performed. -32- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Inventive Note (30) (Thirteenth Embodiment) A thirteenth embodiment of the present invention will be described with reference to the drawings. Substrate processing method. In the thirteenth embodiment, the exposure amount correction in the exposure region is performed in the wafer surface. As shown in Fig. 26, only the most upstream exposure region 2602A located on the most upstream side with respect to the gas flow 2601 in the PEB was exposed, and the PEB and development steps were carried out to prepare the sample 1 for evaluation. The photoresist pattern size evaluation is performed for the most upstream exposure region 2602A of the sample 1 for evaluation, and the optimization of the exposure amount (a correction of the exposure amount) for obtaining a desired size is pursued. As shown in Fig. 27, exposure is performed on the most upstream exposure region 2602A under the above-described optimum exposure amount. The secondary downstream exposure region 2602B was exposed to light, and the same evaluation sample 2 as described above was produced. The resist pattern size evaluation was performed on the exposure region 2602B of the evaluation sample 2, and the optimization of the exposure amount condition (correction of the exposure amount) for obtaining the desired size was pursued. This exposure amount is optimized for the entire exposure amount region on the downstream side. ·· As described above, the exposure amount correction condition from the exposure area disposed on the upstream side to the exposure area on the downstream side can be sequentially calculated for the airflow at the time of PEB. In this way, effective and highly accurate corrections can be implemented. Under the condition of the exposure amount obtained in this manner, when the exposed region is formed in the wafer, the uniformity of the size of the photoresist pattern between the exposed regions can be greatly improved. (Fourteenth Embodiment) A substrate processing method according to a fourteenth embodiment of the present invention will be described with reference to the drawings. In the fourteenth embodiment, the exposure amount correction in the exposure region is performed. The detailed description of each step in photolithography is repeated with the eleventh and twelfth embodiments, so the -33- paper scale is applied to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7. DESCRIPTION OF THE INVENTION (31) Omitted. Fig. 28 is a schematic diagram showing the relative positional relationship of the airflow in the exposure area and the PEB. With respect to the air current 2801, the X-axis is from the upstream side to the downstream side, and the most upstream side edge portion of the wafer is X=0. Fig. 29 is a schematic diagram showing the relationship between the position X in the wafer and the size (line size) of the photoresist pattern after development in the case of the exposure amount D. For the above reasons, the effective exposure amount on the upstream side will be lower than the exposure amount on the downstream side. Therefore, when a positive photoresist is used, the pattern size on the upstream side is large. The following is a description of the steps for calculating the exposure amount of the position X in the wafer. Fig. 30 is a graph showing the relationship between the pattern size and the exposure amount in the vicinity of the exposure amount D. Based on the measured value of the pattern size, the relationship between the exposure amount and the pattern size is approximated by a linear function. When the pattern size of the position X = X1 is L1, the exposure amount D can be calculated from the relationship of Fig. 30, and the ratio D1/D0 of the exposure amount D0 to the desired pattern size L0 is obtained. The obtained value is multiplied by the exposure amount D - D · (D1/D0), and is the optimum exposure amount of X = X1. Using this program, the optimum exposure amount to be the expected pattern size L0 is obtained for each position X. The result is shown in FIG. Such exposure correction in the exposure area may be a method as shown below if a step-and-scan type exposure apparatus is used. When the light source irradiation energy at the time of exposure is P, the scanning speed is v, and the slit width of the illumination region is s, the exposure amount D and E·(s/v) are salty. From this equation, the relationship between the position X and the scanning speed v in the wafer is obtained. The result is shown in FIG. In this way, the scanning speed v is controlled in the exposure area, and the exposure amount correction can be performed. As described above, under the condition of obtaining the exposure amount, the exposure amount correction condition is calculated to form an exposure area. As a result, the size of the photoresist pattern in the exposed area is uniform -34- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

Binding

1300514 A7 B7 V. INSTRUCTIONS (32) Sexuality has been greatly improved. In the present embodiment, the pattern size is simply reduced from the upstream side to the downstream side. However, this is not the case. Further, it is necessary to obtain the relationship between the position X in the wafer shown in Fig. 29 and the size of the photoresist pattern after development for each exposure mask. Further, the positions of the exposed regions on the wafer are different, and the relationship between the position X in the wafer and the size of the photoresist pattern after development also differs. Therefore, it is preferable to obtain the aforementioned relationship for each exposure region and perform exposure correction. Further, in the present embodiment, the relationship between the amount of light emission and the size of the pattern is approximated by a linear function based on the measured value of the pattern size, but the present invention is not limited thereto. It is also possible to measure the value as a reference, and to approximate the relationship by a multiple function has the same effect. (Fifteenth Embodiment) A substrate processing method according to a fifteenth embodiment of the present invention will be described with reference to the drawings. The fifteenth embodiment is for changing the amount of exposure performed in the exposure region. The detailed description of each step in the photolithography is repeated with the eleventh and twelfth embodiments, and therefore will be omitted. Fig. 33 is a view showing the configuration of a projection exposure apparatus of a stepwise scanning method. The illumination system (system) 3301 includes an excimer laser light source, a beam expander, and a fly eye lens. The illumination light 3302 illuminated by the illumination 3301 is incident on the beam splitter 3305 via the ND (Neutrar Density) filter 3303 and the mirror 3304 for adjusting the amount of illumination. The incident light is divided into projection exposure light 3302a and exposure light amount 3302b. The projection exposure light 3302a is incident on the exposure mask 3306. Through the exposure of the mask 3306 light, through the reduced projection optical system -35- This paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Invention Description (33:) 3308 Copy to Wafer 3309. The monitor exposure amount light 3302b is monitored by the exposure amount monitoring unit 3311. The monitoring result is fed back to the irradiation amount adjustment ND filter 3303 via the control unit 3312 and the filter control unit 3313. The exposure mask 3306 and the wafer 3309 are fixed by the exposure mask table 3307 and the wafer table 3310, respectively. The exposure mask table 3307 is controlled by the exposure mask stage control unit 3312. Wafer stage 3310 is controlled by wafer table control unit 3313. The ND filter 3303 is controlled by the filter control unit 3314. The wafer table 3310 and the ND filter 3303 are controlled by the control unit 3315 via the respective control units 3313 and 3314, and are scanned synchronously with each other. Fig. 34 is a schematic view showing the transmittance distribution of the ND filter 3303 for adjusting the amount of irradiation. The purpose of obtaining the transmittance distribution is to correct the fluctuation of the substantial exposure amount caused by acid evaporation and re-adhesion in the PEB. The ND filter 3303 having the transmittance distribution shown in Fig. 34 performs scanning movement for the illumination light 3302. In this manner, the amount of light incident on the exposure mask 2006 can be changed as shown in Fig. 31. As a result, the exposure amount correction in the exposure region can be performed. Under the condition of the exposure amount obtained in this manner, when the exposure amount correction condition is calculated and the exposure region is formed, the uniformity of the photoresist pattern size in the exposure region can be greatly improved. (16th embodiment) The substrate processing method according to the 16th embodiment of the present invention will be described with reference to the drawings. In the sixteenth embodiment, the exposure amount correction is performed in accordance with the coverage of the photoresist pattern in the exposure region. First, the spin coating method is used on the wafer W as an anti-reflection film to make the -36- paper scale applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 5. Invention Description (34) Use it to coat the film. Next, drying treatment was carried out at 215 ° C for 90 seconds to form an anti-reflection film having a thickness of 85 nm. After applying a positive-type chemically amplified photoresist on the wafer W, pre-baking was performed at 1 l ° C for 90 seconds. In this manner, a photoresist film having a thickness of 300 nm is formed on the aforementioned anti-reflection film. After prebaking, the aforementioned wafer W was cooled to room temperature. Next, the wafer W is moved to a stepwise exposure apparatus using an ArF excimer laser (wavelength 193 nm) as a light source. At this time, the exposed area is overprinted to the wafer W under the conditions of ΝΑ = 0.55, σ = 0.75, and ε = 0.67. The following describes the exposure area and the exposure area forming method in detail. Figure 35 is a schematic view of a portion of the exposed area. In Fig. 35, the 110 nm line and the interval pattern group requiring the best dimensional accuracy in the exposure area of the D system. This pattern group D exists in areas A, B, and C where the photoresist coverage is different. The scanning direction during exposure is from left to right in the figure, and the direction of the airflow when PEB is applied after exposure is from top to bottom in Fig. 35. The photoresist coverage of area A is 60%, the photoresist coverage of area B is 30%, and the photoresist coverage of area C is 0%. The photoresist coverage here is expressed as a percentage of the photoresist residue ratio after pattern formation. As described above, the evaporate generated in the PEB treatment is again attached to the surface of the photoresist, causing variations in the pattern size. Due to the different photoresist coverage, the above-mentioned re-adhesion amount of each region is also different, and the pattern is changed by the vegetable. Therefore, in the present embodiment, the corrected exposure amount is calculated by the procedure shown below. Figure 36 shows the relationship between the amount of exposure and the line size. In Fig. 36, each straight line represents area A, area B, and area C. These straight lines are approximated by a linear function. -37- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1300514 A7 B7 V. Invention Note (35) Measurement value. From the relationship of Fig. 36, the desired exposure condition of 110 nm is obtained for the regions A, B, and C, respectively. As a result, the area A was 13.63, the area B was 13.59, and the area C was 13.55 mJ/cm2. The exposure amount (energy amount) calculated in this manner was used to expose the areas A, B, and C. The exposure amount correction method in the exposure region has been described in detail in the fourteenth and fifteenth embodiments, and therefore will not be described here. Next, the wafer W was transferred to a PEB processing unit, and heat treatment was performed at 130 ° C for 90 seconds. The PEB processing unit uses the exhaust gas flow described in the eleventh embodiment to flow along the wafer in a predetermined direction. As shown in Fig. 35, the exhaust flow system at the time of PEB and the scanning direction at the time of exposure are in a direction of a difference of 90 degrees. After the PEB treatment, the same treatment as in the first embodiment was carried out to form a photoresist pattern. As a result of measuring the size of the photoresist line in the exposed area after development, the in-plane dimensional error of the 110 nm line and the interval pattern was greatly reduced as compared with the case where the exposure condition was not corrected. In the present embodiment, the scanning direction at the time of exposure and the airflow direction at the time of PEB are set to be different by 90 degrees, but the present invention is not limited thereto. The relationship between the exposure amount and the pattern size shown in Fig. 36 must be obtained based on the photoresist coverage and the airflow direction and flow rate at the time of PEB, and the corrected exposure amount should be calculated. In the present embodiment, a method of correcting the resist coverage in the exposure region will be described. However, it is preferable to perform correction between the exposure regions which are desired. Further, in terms of the correction method, it is preferable that the direction of the airflow at the time of PEB is preferably sequentially performed from the upstream to the downstream direction as described in the above embodiment. In addition, in this embodiment, based on the measured value of the pattern size, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied at a scale of 1 - 38 - paper. 1300514 A7 B7 5. Inventive Note (36) Function The relationship between the exposure amount and the pattern size is approximated, but is not limited thereto. It is also possible to measure the value as a reference, and to approximate the relationship by a multiple function has the same effect. (17th embodiment) A substrate processing method according to a 17th embodiment of the present invention will be described with reference to the drawings. In the seventeenth embodiment, the exposure amount correction is performed by a light irradiation step different from the exposure. That is, the exposure amount condition at the time of performing the desired pattern copying is the same condition for all the exposed wafers, and thereafter, the exposure amount adjustment is performed corresponding to the position of the exposed wafer. The exposure is the same as in the sixteenth embodiment. With exposure, a 130 nm exposure wafer with an isolated line pattern can be copied onto the wafer in a vertical 11 X horizontal (except for exposed wafers outside the wafer area) to form a latent image. The exposure conditions are 15.00 mJ/cm2 of exposure. Fig. 37 is a schematic view showing a light irradiation system for the purpose of adjusting the exposure amount. The wafer W is placed on the stage 3701 via the inductive spacing 3702. A light source 3703 for light irradiation is disposed above the wafer W. The light source 3703 is composed of a plurality of low-pressure mercury lamps. Light source 3703 emits illumination light 3704. The illumination light 3704 emits only light having a wavelength of 193 nm via a wavelength selective filter (not shown). Light having a wavelength of 193 nm is irradiated onto the wafer W via the mask 3705. The light illumination system is disposed within a chamber 3706 that is purged by nitrogen. Fig. 38 is a schematic diagram showing the positional relationship between the exposed 'light-area region group 3801' formed on the wafer and the light-irradiated region 3802 irradiated at the time of correction. As shown in Fig. 39, the enthalpy unit of the PEB step used in the present embodiment is such that the exhaust gas stream 3903 is radially outward from the outer edge. Therefore, only the airflow relative to the PEB is at the top -39- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Invention Description (37) The outermost edge of the swim position The region (3902 in Figure 39) illuminates light at a wavelength of 193 nm. The irradiation condition was 0.08 mJ/cm2, and this condition was obtained by the procedure shown below. 3901 is a downstream exposure area. Fig. 40 is a graph showing the relationship between the amount of irradiation irradiated at the time of correction and the difference in size between the outermost (uppermost) exposure area and the inner (downstream) exposure area. From the relationship between the corrected irradiation condition and the pattern size difference, the irradiation amount condition in which the pattern size difference is 〇 is obtained. Next, the wafer W was transferred to a PEB processing unit, and heat treatment was performed at 130 ° C for 90 seconds. As shown in Fig. 39, the PEB processing unit radiates from the edge of the crystal to the center using the exhaust gas flow. After the PEB treatment, the same treatment as in the first embodiment was carried out to form a photoresist pattern. As a result of measuring the size of the photoresist line after development, the in-plane dimensional error of the 130 nm line and the interval pattern was significantly lower than when the exposure condition was not corrected. In the case of the PEB used in the embodiment, the exhaust flow system is radial, but is not limited thereto. When a PEB unit in which the airflow is in a certain direction is used, as shown in Fig. 41, a wider lamp can be used as a light source to obliquely illuminate from above the wafer. In Fig. 41, 4101 is a light source, 4102 is a wafer, 4103 is an inductive interval, and 4104 is a stage. When such a method is used, the correction is performed so as to have the irradiation amount distribution of Fig. 42. Further, in the present embodiment, the case where only the most upstream exposure region is corrected is described, but the invention is not limited thereto. It is also possible to replace the mask with a filter that changes in frequency (Fig. 37, 3705). Further, in the present embodiment, a low-pressure mercury lamp is used as the light source for correcting the irradiation, but the present invention is not limited thereto, and a light source such as a laser may be used. -40- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 5. Inventive Note (38) (Embodiment 18) A substrate according to an 18th embodiment of the present invention will be described with reference to the drawings. Approach. In the eighteenth embodiment, the exposure conditions at the time of copying a desired pattern between all the exposure regions are the same, and then the exposure amount adjustment is performed in accordance with the position of the exposed wafer. Exposure adjustment is performed in other EB irradiation steps. A positive-type chemically amplified photoresist is formed by forming a coated electron beam (hereinafter abbreviated as EB) on the wafer W by a spin coating method. Next, drying was carried out at 100 ° C for 90 seconds, and as a result, a photoresist film having a thickness of 300 nm was formed on the wafer. After prebaking, the aforementioned wafer W was cooled to room temperature. The wafer W is moved to a pattern copying apparatus that uses EB as an exposure source. At this time, as shown in Fig. 43, the exposed area containing the 100 nm line and the spacer pattern is copied onto the wafer to a vertical 11 X horizontal 15 configuration, and a latent image is formed. The exposed area group on the wafer can be divided into an unexposed area 4301 and an exposed area 4302 at the wafer end. The PEB unit used in the PEB step uses the exhaust stream 4401 to flow along the wafer in a certain direction as shown in FIG. Therefore, EB irradiation is performed only on the exposure region (4501 in Fig. 45) which is the most upstream position with respect to the airflow. The irradiation amount condition at this time is obtained by the procedure shown below. Fig. 46 is a graph showing the relationship between the area of the unexposed area (based on the area of the original exposure area) and the necessary EB irradiation amount for correction of the pattern size variation. The smaller the area of the unexposed area, the less the amount of acid evaporation during PEB, so more exposure is required. With this procedure, the necessary irradiation amount for correction is calculated corresponding to the area of the 耒 exposure area, and the exposure amount adjustment is performed according to this condition. Next, the wafer W was transferred to a PEB processing unit, and heat treatment was performed at 110 ° C for 90 seconds. As shown in Figure 44, the PEB processing unit uses the exhaust stream -41 - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7

After the wafer is processed toward the Φ ^ ^ at the Φ ^ ^ , the same treatment as in the first embodiment is performed to form a photoresist pattern. s The result of measuring the size of the photoresist line after development in the exposure area, the in-plane size error of the line and the interval image is greatly reduced when the exposure condition is not corrected. This is a case where the correction is made only for the correction of the most upstream exposure area, but is not limited thereto. Preferably, as described in the thirteenth embodiment, the corrected irradiation amount is sequentially calculated from the upstream to the downstream direction. (19th embodiment) A substrate processing method according to a 19th embodiment of the present invention will be described with reference to the drawings. The nineteenth embodiment is an adjustment of the developing solution discharge condition in the case where development is performed on the exposed wafer. Until the exposure, it is the same as the η embodiment. By exposure, an exposed wafer having an isolated line pattern of 1% nm can be imaged onto the wafer in a lattice configuration of the vertical U> (except for the exposed wafer outside the wafer circle) to form a latent image. In the conventional sorrow, the exposure amount of each exposed wafer is constant. The pEB processing step uses a general heating device as shown in Fig. 65 and is the same as the conventional one. In the present embodiment, the adjustment is performed in the developing step in order to make the photoresist pattern 6 formed by the development of the most upstream exposed wafer 1801 and the downstream exposed wafer ι 801 shown in Fig. 18 the same size. That is, the development speed of the photoresist pattern on the wafer is adjusted, and the development speed of the most upstream exposed wafer 1801A is accelerated in the following manner. The developing method of this embodiment will be described with reference to Figs. 47A and B. The linear chemical liquid supply nozzle 4701 is discharged from the one end of the wafer at the same time as the liquid medicine is discharged (the open-42 in the figure applies the Chinese National Standard (CNS) A4 specification (21〇X297 public)~" 1300514 A7 B7 V. INSTRUCTION DESCRIPTION (40) The start position P0) is scanned to the other end (end position P1 in the figure). As a result, the chemical liquid film 4702 is formed on the entire surface of the substrate to be processed. Generally, when it is desired to perform uniform development processing on the wafer surface, it is necessary to fix the discharge amount of the nozzle, the distance between the nozzle and the wafer, and the scanning speed of the nozzle (1.0 L/min, 1.5 mm, 120 mm, respectively). /sec) to form a developer film. Next, after performing static development for 60 seconds, a cleaning process and a spin drying process were performed to form a photoresist pattern. Figure 48 is a graph showing the relationship between the amount of exposure and the size of the photoresist pattern formed after the photolithography step. The solid line in Figure 48 represents the downstream exposed wafer and the dashed line represents the most upstream exposed wafer. The relationship is determined by measuring the size of the most upstream exposed wafer and the downstream exposed wafer relative to the amount of exposure. Since the desired size of this embodiment is 150 nm (L0), all wafers are exposed to 18.36 mJ/cm2 (D). However, the most upstream exposed wafer has a size of 158 nm (L1) due to the small amount of substantial exposure. For the foregoing reasons, the maximum exposure of the most upstream exposed wafer will be less and the size will be larger. Therefore, in the present embodiment, the developer discharge amount of the chemical supply nozzle is increased for the most upstream exposed wafer, and the liquid replacement amount at the time of supply of the developer is increased. As a result, development is promoted to match the size of the most upstream exposed wafer to the size of the downstream exposed wafer. The specific method is as follows. / Figure 49 is a diagram showing the relationship between the amount of discharge and the size of the pattern. The relationship of Fig. 49 is used to determine the amount of discharge. In Fig. 49, when the solid line is used to illuminate the wafer, the dotted line is the most upstream when the wafer is exposed. In the relationship, the discharge amount of the substrate to be processed exposed by the exposure amount (D) is changed, and development processing is performed, and then the pattern sizes of the most upstream exposed wafer and the downstream exposed wafer are measured. Standard discharge volume -43- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Invention description (4Γ) 1.0 L/min (S0), downstream wafer is adjusted to L0 The top chip is adjusted to L1. With this relationship, the most upstream wafer having a small actual exposure amount is processed by the discharge amount S1 (1.2 L/min), and the desired size (L0) can be obtained. Next, a specific control method of the discharge amount will be described using FIG. 50 and FIG. 5001 (position P0) of Fig. 50 is a position at which the supply port of the chemical supply nozzle contacts the wafer W. 5002 (Position P1) is the position at which the supply port of the chemical supply nozzle passes through the most upstream exposed wafers in a row. 5003 (Position P2) is the location of the most upstream exposed wafer. 5004 (position P3) is the other end of the wafer W. Fig. 51 is a diagram showing the relationship between the nozzle supply port position and the discharge amount. As shown in Fig. 51, the supply port of the drug supply liquid supply nozzle is scanned by the discharge amount S1 from the P0 to the position P1 by the discharge amount S1 and the position P2. Between the positions P1 and P2, control is performed so that the discharge amount is linearly reduced from S1 to S0. The change in the discharge amount between the positions P1 to P2 is not limited to this mode as long as the change in the optimum uniformity, such as a change in the quadratic function, can be obtained. This embodiment is a method of controlling the discharge amount, but it is also possible to control the distance between the wafer and the nozzle and the scanning speed of the nozzle. Figure 52 is a diagram showing the relationship between the distance between the wafer and the nozzle (shown as a gap in the figure) and the pattern size. In Fig. 52, the solid line is when the wafer is exposed downstream, and the broken line is when the wafer is exposed most upstream. In the relationship of Fig. 52, the gap (1 to 2 mm) of the substrate to be processed which was exposed by the exposure amount )) was changed, and development processing was carried out, and then the pattern sizes of the most upstream exposed wafer and the downstream exposed wafer were measured. When the pattern size is controlled by the distance control of the wafer and the nozzle, the relationship shown in Fig. 52 can be used to determine the gap (G1) on the most upstream exposed wafer. G0 is the standard condition gap, 1.5 mm 'G1 is the gap of the most upstream exposed wafer, -44- This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Description of invention (42) is the relationship between the position of the nozzle supply port of the Fig. 53 system and the gap between the wafer and the nozzle. With the relationship shown in Fig. 52, the gaps on the uppermost upstream exposed wafer and the downstream exposed wafer shown in Fig. 53 are controlled to optimum values, and nozzle scanning is performed. That is, when the nozzle is scanned, the supply port of the chemical supply nozzle is the gap G0 from the position P0 to the position P1 after the gap Gb position P2. From position P1 to P2, the control gap is increased from G1 to G0 in a straight line. The change in the gap between the positions P1 and P2 is not limited to this, as long as the change in the optimum uniformity, such as a change in the quadratic function, can be obtained. As described above, the reason why the gap can be changed to adjust the developing speed is to change the strength when the liquid contacts the surface of the substrate. Specifically, the development is accelerated when it is strong, and it is decelerating when it is weak. In the present embodiment, since the distance (1 to 2 mm) is adjusted so that the discharge pressure is directly transmitted to the substrate, the development is promoted as the distance is smaller. However, from another experiment, development is promoted when the discharge port is at a distance of more than 5 mm from the surface of the substrate. It is because the gravity effect is greater than the discharge pressure. Therefore, it is preferable to carry out the development adjustment gap, and it is preferable to determine the pattern size and the gap relationship in accordance with the conditions. Figure 54 is a graph showing the relationship between the nozzle scanning speed (scanning speed) and the pattern size. The solid line in Fig. 54 is when the wafer is exposed downstream, and the broken line is when the wafer is most upstream exposed. In the relationship of Fig. 54, the nozzle scanning speed (10 (K 140 mm/sec) of the substrate to be processed exposed by the exposure amount (D) is changed and development processing is performed, and then the most upstream exposed wafer and the downstream exposure are measured. The pattern size of the wafer. When controlling the pattern scanning speed to control the pattern size, the relationship shown in Figure 54 can be used to determine the scanning speed (VI) on the most upstream exposed wafer. V0 standard -45- This paper scale applies to Chinese national standards. (CNS) A4 size (210 X 297 mm) 1300514

A7 _B7_._ V. Description of invention (43 :) The scanning speed of the condition is 120 mm/sec. V1 is the scanning speed of the most upstream exposed wafer, which is 110 mm/sec. With the relationship shown in Fig. 54, the scanning speeds on the uppermost upstream exposed wafer and the downstream exposed wafer shown in Fig. 55 are controlled to optimum values, and nozzle scanning is performed. That is, at the time of scanning, the supply port of the chemical supply nozzle is the scanning speed VI from the position P0 to the position P1, and the scanning speed V0 after the position P2. From position P1 to P2, the control scan speed is increased from VI to V0 in a straight line. The change in the scanning speed of the positions P1 to P2 is not limited thereto as long as the change in the optimum uniformity, such as a change in the quadratic function, can be obtained. As described above, the reason why the scanning speed can be changed to adjust the developing speed is to change the dead time of the nozzle. Specifically, the liquid can be sufficiently replaced at a long time of stagnation, so that the development speed is increased. On the other hand, it will decelerate when it is stopped for a short time. In the present embodiment, since the liquid replacement determined in accordance with the stagnation time is adjusted to a controllable range (100 to 140 mm/sec), the development becomes better as the distance becomes smaller. However, from another experiment, when the scanning speed is 200 mm/sec or more, the scanning speed is increased, and the development is also performed. This is because the fluid flow caused by the force of the nozzle pulling liquid is greater than the stagnant time. Therefore, the scanning speed of the development adjustment/the best matching condition can be obtained, and the relationship between the pattern size and the scanning speed can be determined. As described above, the discharge condition of the developer on the upstream exposed wafer is determined by the relationship between the pattern size at the time of the downstream and the most upstream exposure of the wafer and the control parameter (the discharge member of the developer). It is only necessary to carry out development of the most upstream exposed wafer under the conditions of discharge different from the downstream exposure wafer under this condition. When the development processing is performed by the discharge amount condition obtained by this method, it can be greatly -46-

Attack

This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Inventive Note (44) Improve the uniformity of the size of the photoresist pattern between exposed areas. (Twentyth Embodiment) A substrate processing method according to a twentieth embodiment of the present invention will be described with reference to the drawings. The twentieth embodiment is an adjustment of the developer concentration corresponding to the development step of the exposed wafer. That is, similarly to the nineteenth embodiment, the development speed is adjusted so that the line sizes of the photoresist patterns of the most upstream exposed wafer 1801A and the downstream exposed wafer 1801B shown in Fig. 18 are the same. Specifically, the development speed of the aforementioned most upstream exposed wafer 1801A is accelerated by the method shown below. In the same manner as in the eleventh embodiment, a reflection preventing film having a thickness of 60 nm was formed on the wafer W, and a photoresist film of 300 nm was formed on the antireflection film. Next, after exposing the same exposure step as in the first embodiment, the 110 nm exposed wafer having the line and space pattern is arranged on the vertical 11X horizontal 13 (except for the exposed wafer outside the wafer range) and is formed on the wafer. Latent shadow. The exposure apparatus used in the present embodiment is an ArF excimer laser (wavelength: 193 nm) as a light source. The exposure amount of each exposed wafer is constant. As shown in the nineteenth embodiment described with reference to Figs. 47A and B, a photoresist pattern is formed. As shown in Fig. 48, since the desired size of this embodiment is 110 nm (L0), all wafers are exposed at 25.3 mJ/cm2 (D). However, the size of the most upstream exposed wafer is 120 nm (L1). Therefore, the developer concentration of the most upstream exposed wafer is increased. As a result, development can be promoted to match the size of the most upstream exposed wafer to the size of the downstream exposed wafer. The body method is as follows. Fig. 56A and B are a method of coating a developing solution. In Figs. 56A and B, 5601 is the most upstream exposure wafer, and 5602 is the downstream exposure wafer. In the still development, the air flow 5605 is blown toward the most upstream exposure wafer 5601 by the air blowing nozzles 5603, 5604. -47- ' This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 1300514 V. Invention description (45) With this method, part of the water can be evaporated to increase the concentration of the developer. Since this airflow blowing nozzle blows the airflow 5605 only from 5603, it is possible to blow the airflow only to the most upstream exposure wafer. 5606 system developer. If only the airflow is used, there is a limit to the amount of water that can be evaporated. Therefore, adjust the thickness of the liquid before blowing it. That is, the developer 5701A is supplied in the manner shown in Fig. 57A. Next, as shown in Fig. 57B, the wafer W was rotated at 150 rpm for 2 seconds to form a film 5701B having a liquid thickness of 150 μm as shown in Fig. 57C. Then, the airflow is blown by the air blowing nozzle. Since the liquid thickness is reduced from 1 mm to 150 μπι, the concentration can be greatly changed by the same evaporation amount. Figure 58 is a graph showing the relationship between the amount of exposure and the size of the photoresist pattern formed by the photolithography step. In Fig. 58, the solid line is when the wafer is exposed downstream, and the broken line is the most upstream exposure of the wafer. Next, a method of determining the flow rate of the airflow will be described with reference to FIG. Here, the distance between the nozzle and the wafer is fixed to 15 mm with the flow rate of the blowing. The standard condition flow rate is F0 (0 L/min), the downstream wafer is L0, and the most upstream wafer is L1. With this relationship, if the most upstream wafer having a small actual exposure amount is processed at the flow rate F1 (0.9 L/min), the desired size (L0) can be obtained. As described above, the flow rate of the upstream exposed wafer is determined by the relationship between the pattern size at the downstream and the most upstream exposure of the wafer, and the flow rate of the gas flow, so that the dimensions of the downstream exposed wafer and the most upstream exposed wafer are equal. Under this condition, development was carried out. When the development process is carried out by the airflow conditions determined by this method, the uniformity of the size of the photoresist pattern between the exposed regions can be greatly improved. (21st embodiment) A substrate processing method according to a 21st embodiment of the present invention will be described with reference to the drawings. -48- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Inventive Note (46) The 21st embodiment corresponds to exposing the wafer and changing the developer temperature in the development step. As a result, development can be promoted to make the pattern sizes of the most upstream exposed wafer and the downstream exposed wafer uniform. The combination of the photoresist and the developer used in the present embodiment has a higher development speed at a higher temperature. Therefore, the development temperature of the most upstream exposed wafer can be increased to promote development. Specifically, the development speed of the most upstream exposed wafer 1801A shown in Fig. 18 can be accelerated by the method shown below. It is the same as that of the eleventh embodiment until the exposure. Next, as shown in Figs. 59A and B, in the still development, the most upstream exposed wafer 5901 is heated from the lower surface of the wafer by the hot plates 5903 and 5904 to raise the temperature of the developer. Since only the hot plate 5903 is energized, only the most upstream exposed wafer 5901 can be heated. Figure 60 is a graph showing the relationship between the temperature of the developer and the pattern size. The solid line in Fig. 60 is when the wafer is exposed downstream, and the broken line is when the wafer is most upstream exposed. The method of determining the temperature will be described below using Fig. 60. After the developer film was formed, a hot plate heated to a certain temperature was brought into contact with the back surface of the wafer 10 seconds to 40 seconds after the formation of the liquid film. The standard conditions are TO (23 ° C), the downstream wafer is L0, and the most upstream wafer is L1. With this relationship, the desired size (L0) can be obtained by performing the processing of the hot plate temperature T1 (28 ° C) of the most upstream wafer. As described above, the temperature of the hot plate of the upstream exposed wafer is determined by the relationship between the pattern size when the wafer is exposed downstream and most upstream, and the temperature of the hot plate, so that the dimensions of the downstream exposed wafer and the most upstream exposed wafer are equal. Under these conditions, development was carried out. Further, in the case of a positive photoresist, if the developer temperature is lowered to increase the development speed, the temperature of the hot plate is adjusted to lower the temperature of the developer of the most upstream exposed wafer. In addition, in this embodiment, the heating method is performed from the back side of the wafer by using a hot plate-49- The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 5. Invention description (47) The temperature is adjusted, but the heater can also be used to heat from the wafer. When the development process is carried out by the airflow conditions determined by this method, the uniformity of the size of the photoresist pattern between the exposed regions can be greatly improved. (Twenty-second embodiment) A substrate processing method according to the twenty-th aspect of the present invention will be described with reference to the drawings. In the twenty-second embodiment, the developing speed is adjusted so that the discharge amount of the developer is in an average distribution state. The air flow direction in the heating step (PEB processing step) after the exposure is different from that in the 19th to 21st embodiments. Specifically, as shown in Fig. 39, the air current flows from the outer edge of the substrate to the center. For the above reasons, the most upstream exposed wafer 3902 will be larger than the downstream exposed wafer 3901 in terms of the line size of the photoresist pattern formed after development. Therefore, in order to make the size of the photoresist pattern lines formed after development of the most upstream exposed wafer 3902 and the downstream exposed wafer 3901 are equal, the development speed of the photoresist pattern on the wafer is adjusted. Specifically, the development speed of the aforementioned most upstream exposed wafer 3902 is accelerated by the method shown below. It is the same as that of the eleventh embodiment until the exposure. Next, as shown in Figs. 61A and B, the linear chemical supply nozzle 6101 is stopped at the center of the wafer, and the wafer W is rotated while the chemical is being discharged. As a result, the chemical liquid film 6103 is formed on the substrate to be processed. At this time, the discharge amount of the nozzle, the distance between the nozzle and the wafer, and the number of rotations of the substrate and the substrate were 1.0 L/min, 1.5 mm, and 40 rpm. Next, after 60 seconds of static development, a cleaning treatment and a spin drying treatment were carried out to form a uniform photoresist pattern. In order to achieve uniform processing in the wafer surface, as shown in Figs. 62A and B, the discharge amount in the diameter direction is evenly distributed, so that the same -50-sheet scale can be obtained per unit area for the Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) 1300514 A7 B7 V. Description of invention (48) Supply. In Figs. 62A and B, 6202A is the most upstream exposed wafer, and the 6202B is a downstream exposed wafer. Specifically, as shown by the solid line in Fig. 62C, the distance between the fit and the center increases the discharge amount. As shown in the nineteenth embodiment, when the general exposure step is performed, the relationship between the exposure amount and the size of the photoresist line shown in Fig. 48 is obtained. Therefore, in the present embodiment, as shown by the broken line in Fig. 62C, the discharge amount of the most upstream exposed wafer is set to be larger than the discharge amount (solid line) of the uniform processing condition. In this way, the size of the most upstream exposed wafer can be the same as the size of the downstream exposed wafer. As described above, the set discharge amount of the developer of the most upstream exposed wafer is larger than the set amount at the time of uniform processing. In this manner, the development speed of the most upstream exposed wafer will be faster, and the size of the most upstream exposed wafer will be the same as the size of the downstream exposed wafer. Further, in the present embodiment, the discharge amount of the chemical liquid supply nozzle is changed to make the development speeds of the most upstream exposed wafer and the downstream exposed wafer the same. However, as shown in the twentieth embodiment, the concentration adjustment method may be adopted. At this time, it is also possible to blow the nozzles 5603, 5604 by airflow to blow the airflow. Further, as shown in the twenty-first embodiment, a temperature changing method can also be adopted. At this time, it is sufficient to heat the hot plates 5903 and 5904. When the development process is carried out by the airflow conditions determined by this method, the uniformity of the size of the photoresist pattern between the exposed regions can be greatly improved. (Twenty-third embodiment) A substrate processing method according to a twenty-third embodiment of the present invention will be described with reference to the drawings. In the twenty-third embodiment, the development speed is adjusted by the hydrophilization treatment. That is, as shown in Fig. 39, the most upstream exposure region 3902 is made more hydrophilic than the downstream exposure region 3901. As a result, the development speed of the most upstream exposure region 3902 becomes faster. -51 - This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 V. Invention description (49) The body method is as follows. Further, the flow direction of the PEB treatment step is the same as that of the twenty-second embodiment. - It is the same as the eleventh embodiment until the exposure. Next, as shown in Figs. 47A and B, ozone water in which 1 ppm of ozone molecules are dissolved is supplied as a straight nozzle 4702 before the supply of the developer. As a result, the surface of the photoresist film can be hydrophilized. Ozone water can be below 5 ppm. As shown in Fig. 63, the wafer W was placed at a rotation of 500 rpm, and the direct nozzle was placed at the center of the substrate (6301 in the figure). At this time, ozone water was discharged from the straight nozzle for 1 second. In the spit out state, move to the outer edge at 100 mm/sec (6302 in the figure). At this time, the straight nozzle is kept stationary for a certain period of time (hereinafter referred to as the stagnation time of the outer edge portion). Provide more ozone water to the outer edge: make the outer edge more hydrophilic. After a certain period of time, the discharge of ozone water is stopped, and the substrate is dried by rotating the substrate. Then, as shown in FIGS. 47A and B, the linear chemical supply nozzle 4702 is used to scan the liquid medicine from one end of the wafer W (the starting position in the drawing) to the other end (in the figure). End position). As a result, a liquid film 4702 is formed on the wafer W. The discharge amount of the fixed nozzle, the distance between the nozzle and the wafer, and the scanning speed of the nozzle (1.0 L/min, 1.5 mm, and 120 mm/sec, respectively) form a developer film. Then, a still development, a cleaning treatment, and a spin drying treatment for 60 seconds were carried out to form a photoresist pattern. As shown in Fig. 48, since the desired size of the present embodiment is 150 nm (L0), the entire wafer is exposed to 17.5 mJ/cm2 (D). However, since the actual exposure amount of the most upstream exposed wafer is small, the size is 158 nm (Ll). Therefore, the optimization of the stagnation time at the outer edge is consistent. -52- This paper scale applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) 1300514 A7 B7 V. Inventive Note (50) Figure 64 shows the relationship between the dead time and pattern size of the outermost edge of the most upstream exposed wafer. Under the condition of dead time t0 (=0 sec), the downstream wafer is L0 and the most upstream wafer is L1. From this relationship, it can be seen that the desired size (L0) can be obtained by the dead time .tl (=3 seconds). As described above, making the photoresist surface of the most upstream exposed wafer more hydrophilic can speed up the development of the most upstream exposed wafer. As a result, the size of the most upstream exposed wafer can be the same as the size of the downstream exposed wafer. In the present embodiment, hydrophilization is achieved using ozone water, but is not limited thereto. Hydrophilic effects such as oxygen water, carbon monoxide water, and hydrogen peroxide water in pure water and oxidizing liquid can also be used. In the eighteenth, twenty-secondth, and twenty-third embodiments, the exhaust flow in the case of PEB is the same direction, but the invention is not limited thereto. Regardless of whether the PEB unit used is a radial flow from the outer edge of the wafer to the center or from the center to the outer edge, the same procedure can be used to correct it. In the 19th and 21st to 23rd embodiments, a chemical amplification type resist for a KrF excimer laser is taken as an example. However, it is not limited to this. That is, an ArF photoresist can also be used. In the twentieth embodiment, a chemically amplified resist of ArF excimer laser is taken as an example. However, it is not limited to this. That is, KrF photoresist can also be used. Further, in the 19th to 23rd embodiments, F2 photoresist, EB photoresist, and EUV photoresist can be used. In the first to twenty-third embodiments, the isolated line pattern of 140 nm, and the line and space pattern are described, but the invention is not limited thereto. It can also be used for the formation of a hole pattern or the like. In the first to twenty-third embodiments, an excimer laser is used for exposure. -53- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A7 B7 V. Invention description (52 322 flat exposure area 401 spacer 402 line part 730 heat source 731 halogen lamp 732 light guide 940 absorbing member 1107 splicing plate 1109 heater 1207 plate member 1209 water distribution pipe 1450 electrode member 1801 exposure wafer 1801A most upstream exposure wafer 1801B downstream exposure wafer 1802 air flow 1803 notch 2006 exposure mask .2601 air flow 2602A most upstream exposure area 2602B. Sub-downstream exposure area 2801 Airflow: 3301 Illumination system (system) 3302 Illumination light 3302a Projection exposure light 3302b Exposure exposure light 3303 ND filter 3304 Mirror 3305 Beam splitter 3306 Exposure mask 3307 Exposure mask table 3308 Reduced projection optical system 3309 Wafer 3310 Wafer stage 3311 Exposure amount monitoring unit 3312 Control unit, exposure mask stage control unit 3313 Filter control unit, wafer table control unit 3314 Filter control unit '3152 Control unit 3701 Taiwan 3702 Inductive Space 3703 Light Source 3704 Illumination 3705 Mask 3706 Chamber-55- This paper size is applicable to China National Standard (CNS) A4 size (210 X 297 mm) 1300514 A7 B7 V. Invention description (53) 3801 Exposure area group 3802 Light irradiation area 3901 Downstream exposure area 3902 outermost exposed area, most upstream exposed wafer 3903 exhaust flow 4101 light source 4102 wafer 4103 inductive interval 4104 stage 4301 unexposed area 4302 exposure area 4401 exhaust flow 4501 exposure area 4701 chemical supply nozzle 4702 liquid film, Straight nozzle 5601 Maximum upstream exposure wafer. 5602 Downstream exposure wafer 5603 Airflow blowing nozzle 5604 Airflow blowing nozzle 5605 Airflow 5606 Developer liquid 5701A Developer 5701B Film 5901 Maximum upstream exposure wafer 5903 Hot plate 5904 Hot plate. 6101 Linear liquid supply Nozzle 6103 Liquid film 6202A Upstream exposure chip 6202B Downstream exposure chip 6500 Chamber 6501 Air inlet 6502 Vent 6503 Burning plate 6504 Airflow 6705 Exposure chip ARM Wafer transfer arm G Clearance P Power supply 'P0 Start position P1 End position TW1 Tower TW2 Tower Y07 Proximity Plate -56- Paper Of the applicable Chinese National Standard (CNS) A4 size (210 x 297 mm)

Claims (1)

13005 1 turn _132340 patent application A8 Chinese patent application scope replacement (94 U month is Applying for a specialization of the surrounding area - a heating device for a coated film, characterized by a bag chamber having an internal space; a heating plate having a substrate to be processed having a finishing layer supported in the chamber a mounting surface for heating the substrate to be processed, and a partitioning member disposed in the cavity 1 so as to face the mounting surface, and the partitioning member divides the internal space into a second space having a plurality of holes communicating with the second and second spaces, wherein the mounting surface is disposed in the first space; and an air flow forming mechanism is disposed on a side surface of the second space An air introduction port is provided, and an exhaust port connected to the exhaust mechanism is provided on the other side surface portion of the opposite side, and an air flow flowing in a single direction from the air introduction port to the exhaust port is formed to discharge the processed substrate The resulting vaporizer. 2. The device of claim 1, wherein the partition member is detachable from the heating device. 3. The device of claim 1, wherein the partition member comprises a material selected from the group consisting of porous ceramics and corrosion-resistant metals. 4. The device of claim i, wherein the aforementioned partition member has a pore size ranging from 2 μm to 100 μm. 5. The apparatus of claim 1, wherein the evaporating substance is discharged to the second space through the plurality of holes of the partition member, and is selected from the group consisting of a pore size and a porosity of the partition member. At least one of the above, and the aforementioned airflow forming machine Binding 1300514 - C8 D8 VI. The scope of application for patents can be adjusted. 6. A heating device for coating a film, comprising: a chamber having an internal space; and a heating plate having a mounting surface for supporting a substrate to be processed having a coating layer in the chamber, and The substrate to be processed is heated; and the adsorption plate is disposed inside the chamber so as to face the mounting surface, and is configured to adsorb the vaporized material generated by the substrate to be processed. 7. The device of claim 6, wherein the adsorption plate has a surface layer comprising an oxide, a nitride, and an oxide layer on a surface opposite to the substrate to be processed, and a surface system opposite to the substrate to be processed. A material selected from the group consisting of nitride materials. 8. The device of claim 6, wherein the adsorption plate has a temperature control function capable of controlling the temperature of the adsorption plate. 9. The device of claim 8, wherein the temperature control function sets the temperature of the adsorption plate to be higher than a temperature of the substrate to be processed. 10. The device of claim 8, wherein the temperature control function sets the temperature of the adsorption plate to be lower than the temperature of the substrate to be processed. 11. The device of claim 8, wherein the adsorbing plate has a material comprising an oxide, a nitride, and an oxide containing a surface opposite to the substrate to be processed, and the above-mentioned -2- paper scale is applicable to China. National Standard (CNS) A4 Specification (210X297 mm) 1300514. The surface of the patented vane plate is selected from the group consisting of nitride materials. 12. The device of claim 6 wherein the adsorption plate contains metal. The device, the device further has a device for generating an electric field between the heating plate and the electrode member. 13. The device of claim 12, wherein the electrode member is applied lower than the heating plate by using the voltage generator. The voltage adsorbs the aforementioned evaporant. The apparatus according to claim 12, wherein said electrode member suppresses generation of said evaporant by applying a voltage higher than said heating plate by said voltage generator. A photoresist processing apparatus characterized by comprising a photoresist forming mechanism for forming a chemically amplified resist film on a substrate to be processed, and irradiating the chemical amplification resist film with an energy ray to form an exposure having a latent image pattern An exposure mechanism of the region; a rotation correction mechanism for rotating the direction of the substrate to be processed; a heat treatment mechanism for flowing the gas flow in one direction along the substrate to be heated while heating the chemical amplification type resist film; and the chemical amplification type photoresist Development mechanism for film development. 16. A method for treating photoresist, comprising the steps of forming a photoresist film on a substrate to be processed; heating the substrate to be processed having the photoresist film formed in the chamber - 3 the paper scale is applicable to the Chinese national standard (CNS) A4 size (210X 297 mm) 1300514 a step of dividing the chamber into a second space and a second space by a partition member having a plurality of holes communicating with the second and second spaces, and being disposed on one side portion of the second space An air introduction port, and an exhaust port connected to the exhaust mechanism is provided on the other side surface portion of the opposite side to form an air flow flowing in a single direction from the air introduction port to the exhaust port, and the processed substrate is formed Loading in the first space, during the heating period, the evaporating material generated by the substrate to be processed flows through the plurality of holes of the partition member to the second space, and the air is exhausted from the second space by the air flow. And exposing an energy ray to the photoresist film to form an exposure region having a latent image pattern; and selectively removing a portion of the photoresist film by placing the photoresist film in a developer solution, being processed as described above A development step of forming a desired pattern on the substrate. 17. The method of claim 16, wherein the exposing step is performed after the heating step. 18. The method of claim 17, wherein the developing step is performed after the exposing step. The method of claim 16, wherein the exposing step is performed prior to the heating step. 20. The method of claim 19 wherein said developing step is carried out after said heating step. 21·If the method of claim 16' -4- The paper scale applies to China National Standard (CNS) A4 specification (21〇 X 297 mm) 1300514 (5) The energy line is selected from the group consisting of ultraviolet rays, far ultraviolet rays, vacuum ultraviolet rays, springs, sub-lines, and X-rays. 22. A photoresist processing method comprising the steps of: forming a photoresist film on a substrate to be processed; heating the substrate to be processed in the chamber; the cavity A has a surface opposite to the substrate to be processed The adsorption plate disposed in the ground; the step of adsorbing the evaporate generated by the substrate to be processed by the adsorption plate during the heating; and the exposing step of irradiating the energy line to the photoresist film to form an exposure region having a latent image pattern; And a developing step of developing the aforementioned photoresist film. The method of claim 22, wherein the exposing step is performed after the heating step. The method of claim 23, wherein the developing step is performed after the exposing step. The method of claim 22, wherein the exposure step is performed prior to the heating step. 26. The method of claim 25, wherein the developing step is performed after the aforementioned heating step. 27. The method of claim 22, wherein the adsorption plate is temperature controllable. 28. The method of claim 27, wherein the adsorbing plate is controlled to be cooler than the substrate to be processed. 29. The method of claim 27, wherein -5- the paper size is suitable for @@i^(CNS) A4 specification (21G X 297 butterfly ------ 1300514 The front and the attached plate "temperature system control is (4) the substrate temperature to be treated. The method of claim 22, wherein the photoresist film is a chemically amplified photoresist. 31. The method of claim 22, wherein the energy line is selected from the group consisting of ultraviolet light, far-line, true, electronic, and X-rays. The method of claim 22, wherein the adsorption plate comprises a metal member, and wherein the adsorption plate and the heating plate are in a direction in which the evaporation material is adsorbed in the adsorption plate, and The direction selected in the group that suppresses the direction in which the evaporant is generated causes an electric field to be generated. 33. The method of claim 32, wherein the exposing step is performed after the step of heating. The method of claim 33, wherein the developing step is performed after the exposing step. 35. The method of claim 32, wherein the exposing step is performed prior to the heating step. 36. The method of claim 35, wherein the developing step is performed after the heating step. The method according to claim 33, wherein a potential lower than the temperature of the heating plate is applied to the adsorption plate, and the evaporated product is adsorbed on the surface of the adsorption plate. 38. The method of claim 33, wherein the -6- paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) 1300514 'the patent application scope is applied to the adsorption plate to apply the potential of the heating plate to suppress the potential The aforementioned photoresist film produces the aforementioned vaporizer. The method according to claim 33, wherein after the heating step, a positive potential is applied to the adsorption plate to cause the evaporation substance adsorbed on the surface of the adsorption plate to be detached from the adsorption plate. The method of claim 30, wherein the chemically amplified resist is a photosensitive resin film. 41. The method of claim 32, wherein the energy line is selected from the group consisting of ultraviolet light, far ultraviolet light, vacuum ultraviolet light, electron lines, and X-rays. 42. A photoresist pattern forming method for sequentially forming a chemically amplified resist film on a substrate to be processed, for irradiating an energy line of the chemically amplified green film to form a latent image pattern An exposure step of the exposed region; a heating step of heating the chemically amplified green film; and a developing step for developing the chemically amplified resist film is characterized by /, corresponding to the aforementioned chemical amplification of the resistive evaporation The amount of plug and the change in the amount of re-attachment of the evaporant "the substantial energy change" corrects the energy of the irradiated area before the heating. ^ 43· A method for forming a photoresist pattern, which is a step of sequentially forming a chemically amplified resist film on a substrate to be processed, and irradiating the chemically amplified resist film with a material selected from the group consisting of purple material, and far purple National Standard (5) ^ survey (10) 297; ~ 1300514 - B8 C8 D8 6. The exposure step of applying the energy line in the outer line of the patent, the vacuum ultraviolet light, the electron line and the X-ray group to form the exposed area with the latent image pattern; a heating step of heating the chemical amplification type resist film in the presence of a gas stream; and a developing step of developing the chemical amplification type resist film, which is characterized by evaporating the evaporation from the chemically amplified photoresist in response to the heating The amount of the first energy change caused by the change in the amount of re-adhesion of the evaporant is corrected, and the energy applied to the exposure region is corrected before the heating. The method of claim 43, wherein the energy correction is performed using exposure amount adjustment at the time of exposure. 45. The method of claim 44, wherein the adjusting of the amount of exposure is performed in the aforementioned exposure area. 46. The method of claim 45, wherein the adjusting of the amount of exposure is performed in accordance with a coverage of the formed photoresist pattern. 47. The method of claim 45, wherein the exposure area is formed by performing a reduction projection of a pattern on the substrate for projection exposure on the substrate to be processed by the scanning exposure apparatus, and adjusting the irradiation condition of the energy line is a method selected from the group consisting of adjusting a scanning speed of the projection exposure substrate and the substrate to be processed, and adjusting an incident energy of the projection substrate incident on the scanning exposure device. 8 - The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 points, and the patent application is implemented. The method of claim 44, wherein the exposure amount of the most upstream exposure region where the exposure region is not present on the upstream side is adjusted to be substantially higher than the downstream exposure region other than the most upstream exposure region with respect to the airflow direction. 49. The method of claim 43, wherein the energy correction system and the exposure step are performed separately, and the exposure region is irradiated with energy corresponding to the second energy change portion. 50. The method according to claim 49, wherein the step of irradiating the exposing region to the expansive portion of the amount of the ice amount is selected from the group consisting of a lamp, a laser having a wavelength capable of sensitizing the chemically amplified photoresist. And the method of claim 43, wherein the energy correction is performed based on a correction amount sequentially calculated from the upstream side to the downstream side with respect to the airflow. . 52. The method of claim 43, wherein the exposing and the adding are further comprising the step of rotationally modifying the substrate to be processed. 53. The method of claim 43, wherein the gas flow is in a direction along one of the substrates being processed. M• A photoresist pattern forming method for sequentially forming a chemically amplified resist film on a substrate to be processed; G-scale is applicable to -9 - 1300514 - C8 D8 VI. Patent application scope for the aforementioned chemical amplification type a step of exposing the energy line to form an exposure region having a latent image pattern; a heating step of heating the chemical amplification type resist film; and a developing step of developing the chemical amplification type resist film, It is characterized in that the substantial energy change caused by the change in the amount of the evaporating substance evaporated from the chemically amplified resist and the amount of re-adhesion of the evaporating material during the heating is applied to the aforementioned heating. Correction of the energy of the exposed area. 55. A photoresist pattern forming method for sequentially forming a chemically amplified resist film on a substrate to be processed; and irradiating the chemically amplified resist film with ultraviolet light, far ultraviolet light, vacuum ultraviolet light, An electron beam, and an energy line of the group of X lines to form an exposure region having a latent image pattern; a heating step of heating the chemical amplification type resist film in the presence of a gas stream; The developing step of developing the chemically amplified resist film is characterized by a change in the amount of the evaporating substance evaporated from the chemically amplified resist during the heating and the amount of re-adhesion of the evaporating substance. The substantial first change in energy is caused, and during the heating described above, the correction of the energy supplied to the exposed region is performed. 56. The method of claim 55, wherein the energy correction is performed using heat of heating. -10- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1300514 - C8 D8 VI. Patent application scope 57. The method of claim 55, wherein the heating is performed in relation to the aforementioned airflow The direction is such that the energy of the most upstream exposure region where the exposure region does not exist on the upstream side is higher than the downstream exposure region other than the most upstream exposure region, and the energy supplied to the exposure region is corrected. 58. The method of claim 55, wherein the airflow is in a direction along one of the substrates being processed. 59. The method of claim 55, wherein the energy correction is performed based on a correction amount sequentially calculated from the upstream side to the downstream side with respect to the airflow. The method of claim 55, wherein the exposing and the heating are further provided with the step of rotationally correcting the substrate to be processed. 61. A photoresist pattern forming method for sequentially forming a chemically amplified resist film on a substrate to be processed; irradiating the chemical amplification resist film with an energy line to form an exposed region having a latent image pattern Exposure step: a heating step of heating the chemical amplification type resist film in the presence of a gas stream; and supplying a developer to the chemical amplification type resist film by a chemical supply nozzle to form a desired light The developing step of the resist pattern is characterized in that the substantial energy distribution caused by the change in the amount of the evaporating substance evaporated from the chemically amplified resist during the heating and the amount of re-attachment of the evaporating substance is included, and The photoresist pattern -11 produced by the above distribution - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 装· 玎 1300514 A8 B8 C8 D8 Patent application range The value selected in the group of change in amplitude, during the development described above, the development speed of the resist pattern is adjusted in the substrate to be processed. The method of claim 61, wherein the adjustment of the development speed is performed to compensate for the evaporation loss of the most upstream exposure region of the exposure region on the upstream side, and is used in the upstream direction with respect to the airflow direction during the heating. The exposure region and the downstream exposure region other than the most upstream exposure region are changed by changing the developer discharge condition discharged from the chemical liquid supply nozzle. The method of claim 62, wherein when the chemical amplification type resist is positive, the adjustment of the development speed is a discharge condition of the upstream exposure region and the downstream exposure region, which facilitates the promotion of the most upstream Development of the exposed area or suppression of development of the aforementioned downstream exposed area. The method of claim 62, wherein the chemical amplification type resist is negative, the adjustment of the development speed is performed by changing a discharge condition of the most upstream exposure region and the downstream exposure region, so as to suppress the most upstream exposure region. Developing, or promoting development of the aforementioned downstream exposed areas. The method of claim 62, wherein the developing speed adjustment has a step of determining a relationship between the discharge condition of the developer and the pattern size in the most upstream exposure region and in the downstream exposure region; The developing solution discharge condition of the exposed area and the downstream exposed area is such that the pattern size of the most upstream exposed area and the downstream exposed area are shown in Figure -12 - The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 - C8 D8 6. The procedure for the same size of the patent application scope; and the step of discharging the developer according to the discharge condition determined above. The method of claim 63, wherein the method of supplying the developer is to form a liquid film by scanning the nozzle from one end to the other end of the substrate to be processed in a state where the developer is discharged by the linear drug supply nozzle. According to the method, the discharge condition is based on a scanning speed of the nozzle, a discharge amount of the developer, a value selected from a group including the nozzle, and a distance from the substrate to be processed. 67. The method of claim 63, wherein the airflow direction is a direction selected from a group consisting of a center of the substrate to be processed and a direction of the outer edge toward the center, and the method for supplying the developer has The linear chemical solution supply nozzle is disposed at the center of the substrate to be processed, and the nozzle continuously discharges the developer and rotates the substrate to be processed to form a liquid film. The adjustment of the development speed is controlled by the discharge amount distribution of the nozzle. 68. The method of claim 61, wherein the adjusting of the developing speed is to compensate for the evaporation loss of the most upstream exposed region of the exposed region on the upstream side, and to adjust the upstream direction with respect to the direction of the airflow during the heating. The developer temperature in the exposure region and the developer temperature in the downstream exposure region other than the most upstream exposure region are implemented. 69. The method of claim 68, wherein the aforementioned chemical amplification type resist is positive, the aforementioned development speed adjustment - 13 - the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1300514 - Jt> o C8 D8 7T, the patent application system changes the developer temperature of the most upstream exposure region and the downstream exposure region to promote development of the most upstream exposure region or to suppress development of the downstream exposure region. 70. The method of claim 68, wherein the chemical amplification type resist is negative, the adjustment of the development speed is to change the developer temperature of the most upstream exposure region and the downstream exposure region, so as to suppress the most upstream exposure region. Developing, or promoting the development of the aforementioned downstream exposure region. The method of claim 68, wherein the developing speed adjustment has a step of determining a relationship between a developer temperature and a pattern size in the most upstream exposure region and in the downstream exposure region; determining the most upstream exposure region and downstream a developing solution temperature in the exposed region, a step of making the pattern size of the most upstream exposed region and a pattern size of the downstream exposed region the same; and a step of adjusting the temperature of the developing solution determined as described above. The method of claim 68, wherein the adjusting of the temperature of the developer is performed using a heat source selected from the group consisting of a hot plate and a lamp heater, and is performed from under the substrate to be processed. 73. The method of claim 68, wherein the adjusting of the developer temperature is performed from above the substrate to be processed using a lamp heater. 74. The method of claim 61, wherein the adjustment of the aforementioned development speed is adjusted relative to the direction of the airflow of the above-mentioned airflow direction. The Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1300514 A8 B8 C8 is applied. ΤΛΟ 6. Patent application range The developer concentration of the most upstream exposure region where the exposure region is not present on the upstream side, and the concentration and concentration of the downstream exposure region other than the most upstream exposure region are implemented. In the method of claim 74, wherein the chemical amplification type resist is positive, the adjustment of the development speed changes the display liquid concentration of the most upstream exposure region and the downstream exposure region to promote the most Development, or suppression of the upstream exposure area = development of the downstream exposure area. W 76. The method of claim 74, wherein The tear is such that the development of the most upstream exposed region is inhibited or the development of the downstream exposed region is promoted. 77. The method of claim 74, wherein the developing speed adjustment has a step of determining a relationship between a developer concentration and a pattern size in the most upstream exposure region and in the downstream exposure region; determining an most upstream exposure region and a downstream exposure region The developer is concentrated to produce a step in which the pattern size of the most upstream exposed region and the downstream exposed region are the same; and the step of adjusting the developer concentration to the above. 78. The method of claim 74, wherein the adjusting of the developer concentration on the substrate to be processed is performed by previously blowing a gas stream to the developer level. This paper scale applies to the Chinese national standard ((31^8) Α4 specification (210 X 297 mm) 1300514 έ88 C8 D8 VI. Patent application scope 79. The method of claim 74, wherein the adjustment of the developer concentration is included The step of thinning the developing liquid film on the substrate to be processed, and the step of blowing the air current onto the developing liquid surface. The method of claim 61, wherein the air flow direction is outward from a center including the substrate to be processed In the direction of the edge and the direction selected from the group of the outer edges in the center direction, the adjustment of the development speed has a step of supplying a liquid to the surface of the photoresist before the developing step supplies the developing solution; and with respect to the direction of the air flow, The step of adjusting the surface state of the most upstream exposure region and the surface state of the downstream exposure region other than the most upstream exposure region. 81. The method of claim 80, wherein the liquid system is pure water. 82. The method of claim 80, wherein The liquid system oxidizing liquid. The method of claim 82, wherein the oxidizing liquid system is selected from the group consisting of ozone, oxygen, and carbon monoxide. And an aqueous solution of the group consisting of hydrogen peroxide. 84. The method of claim 82, wherein the oxidizing liquid system has an ozone water of 5 ppm or less. -16- The paper size is applicable to the Chinese National Standard (CNS) A4 specification. (210 X 297 mm)