1299969 九、發明說明： 【發明所屬之技術領域】 • 本發明係關於一種選擇性電鍍之ic載板製作方法，尤指無導電線 • 之選擇性電鍍製作方法。 【先前技術】 由於電子產品輕薄短小之趨勢，加上功能之不斷增多，使得晶片 之I/O數快速增加，相對的封裝技術也不斷更新，現今在高階產 。口中已多數採用覆晶封裝（Flipchip)的技術，封裝密度也隨之 不斷地提高。 傳統在增層材料(Build up material)上如玻纖加強樹脂材料 (prepreg)增層法中製作5〇微米線距細線路，使用丨· 5〜5· 〇咖薄 φ 銅皮，利用此銅皮做為電鑛(pattern piating)之導電層，最後再 使用快速餘刻（flash etching)咬钱1· 5〜5· Oum的底銅厚度，此法 因薄銅皮需要粗糙的表面與玻纖加強樹脂材料結合，需要存在一 _ 定程度的粗糙表面結構，但此結構會造成快速蝕刻時必須加強咬 , 蝕深度，而造成電鍍之後的線寬損失，基於底銅的厚度，咬蝕量 無法再減少，無法製作50微米線距以下的更細線距的高密度載板。 此外，一般在封裝載板的線路層上電鍍鎳金時，為了將電鍍時所 需的電流傳入載板，尤其是欲電鍍的線路層，必須透過相連接於 1299969 .線路層之導電線傳人，軸此種做法可以將祕層完全地用電鍍 鎳i層包覆住’但是導電線在完成電鑛後仍會保留在载板中，而 -佔_有限的佈線空間。若欲減少導電線所_的佈線空間，而 ^導躲的寬度作得比較窄時’會導致所電鍍it!來的f麟金層 •厚度碼自，因此縮小導躲喊度财是赌高佈_度的 辦法。 馨尚有其他無導線的载板製作方法，但那些方法卻為了省略導電 線，而無法完全地用電鍍鎳金層包覆住線路層，意即僅在線路層 •上面有電麟金層’靖卻無法覆蓋電麟金。目此在載板封裝 技術中，確實需要-種仍可以在線路層上進行電鑛程序而完全包 覆住線路層，但可在完成電絲序後財導電線或_元件的存 在。 【發明内容】 本發明之主要目的在提供一種高密度無導電線之選擇性電鍍^載 板製作方法，利用特殊樹脂層，此樹脂層是一高分子有機材料厚 度1〜5um先塗佈於厚銅皮(Copper Foil)可為12um的背面粗糙面 • (Mat仂Side)，然後以習用載板增層熱壓壓合技術壓著於破纖樹 脂加強材料(Prepreg)上，再將銅皮完全去除露出樹脂層，利用銅 皮背面的粗糙度，再施作導電金屬層，而且因露出樹脂層表面有 粗糙度所以導電金屬層附著力可以支持後續製程的施作。 1299969 .此特賴合材料經職合之後轉殊樹賴著於玻纖加強樹脂材 料上(prepreg)，進而提供一個適合可導電金屬層介面，此可導 電金屬層之形成可利用習知的賤鍍(sputtering)或化學沉積 (Electroless depositi〇n)方法施作，此導電金屬可為鋼，以下 以化學銅作為說日狀’形成很薄的化學鋼厚度狀6〜2鳥，經過 田射成孔之後，利紐化學銅層作為除膠逢加·)之遮罩 _ (mask)，崎渣之後顧紐除去此化學崎再次露出特殊樹脂 之表面，藉著外層特殊樹脂層對於化學銅層吸附力強之特性，再 .經—次的覆蓋後仍能夠提供有效的附著力製作出金屬線路，透過 既有影轉移與電鑛(pattern plating)，也就是習知的半加層 法(semi additive process，SAP)技術製作細線路，最後經過快速 餘刻只要將很薄的化學銅層咬轉，此製作方法可將製作線路能 力提昇至30微米線距(Line pitch)，習知1(：載板_巧玻纖 籲樹脂加姆料如BT Prepreg無法在其表面形成良好粗糖度以施作 有足夠附著力$電金屬相施行半加層法(s則製程製作3〇微米 線距的線路，以此技術可提供細線路製作的方法並提高良率。 另外’藉著外層特殊樹脂層對於化學銅層附著力強之特性，再經 .過财_形成高密度的線路之後，則在鄰近於金屬線路間特殊 =脂層與金屬線路上，_贿或化學沉積方法施作，形成作為 &電的薄的化學銅層’紐藉著導電金屬層將電鑛電流由基板外 圍傳入载板⑽，而在金鱗路層上以光剛(phQtQ_resist〇r) 1299969 可為乾膜或者是顯作為選 路與畴面，此糊纽要電鍵之線 金屬,，且由 、又、工1^形成凡全包覆住線路的電鍍 、曰 由於化學銅層可被移除，而在6出綠*、 提供電鍍導電用之導+缓^ 成形之後沒有 其料+ _触在，轴增加可料的空間。 土、、u目的，本發明高密度的無導電線之選擇性電 作方法，其方法主要是利用外層特殊樹脂層對於^ 衣 強之特性，經過多次的覆蓋與去“、U層吸附力 上並在此化學銅層上電鑛出第一全屬線路;層祕留在樹脂層 的附著力。 金屬緣路層’而且能夠提供足夠 由於樹脂層料電金麟具奴夠__力，可使化學銅層緩 過製作過程中仍不會脫落，故本發明在不採用傳統的選擇性電鑛 载板製作方法’傳統方法使用會佔用佈線空間的導線線路，新式 方法因不·會佔贿線如的導電線路，因此可減少因導電線 路所佔用的佈線空間，提高有效的佈線密度。 關於本發明之優點與精神可崎由以下的發卿述及所附圖式得 到進一步的暸解。 【實施方式】 請參閱第1A~1P圖’第1A〜1P圖為本發曰月高密度無導電線之選擇 性電鍍1C載板製作方法之示意圖。在進行本發明製程前，需先準 備好如第ΙΑ ®所示之載板10。此載板1G最大的特點在於，會在 8 1299969 覆蓋内層線路層12的玻纖加_脂材料14上職特殊材質的樹 -脂層15 ’樹脂層15塗佈於銅皮16上，以IC載板習知麼合製程將 -此樹脂層15及銅皮16的複合材料黏合於玻纖加強樹脂材料14、 上。由於此銅皮16背面是粗糙面_te Slde)會使樹脂層15更 為粗糙，進而使後續在樹脂層15上形成材料(尤指化學銅；如第 ic〜1F圖所示之化學金屬層18、22、如第ικ圖所示之導電金屬層 26)時，顧層15麟此㈣奸_#著力，財受後續加謂 •程。 、 如第ία〜ij圖所示’從載板10的銲球面（_ _)、心士人面 (Die Slde)的樹脂層15上面，形成欲在其上電鍍的線路層24口(如 第ij圖中分別在銲球面和IC結合面上的兩種線路層24)。然後， 依據如第1K〜1P圖所不’藉著本發明高密度無導電線之選擇性電 鑛1C載板製作方法，在沒有導電線的存在下，仍對此線路層進行 電鏟的程序，而在銲球面、Ic結合面上各選擇一個不同型式的線 路層進行魏’而選擇地在線路層24上形成如第㈣所示之電 鍍鎳金層30。 簡略* σ續如第υ騎枕樹脂層15上㈣形成的無導電 線的線路層24上進打電鍍時，由於仍需要將電錄電流傳入載板 10匕口此在對線路層24進行電鑛時，需至少先如第I圖所示在 作為導電的導電金屬層26(可為濺鑛或者化學沉 和之W，以下以化學銅為說明之），然後藉著導電金屬層％將 9 1299969 电鍍電流傳人載板10，而如帛1G g卿在線路層24上選擇性電 鍵出完全包覆住線路層之電金層3G，最後如第lp_示移除 第二乾膜28、導電麵層26。如此—來，可因域脂層15能對 此導電金制26妓好的_力，使得上述製齡法得以在高良 率的情況下被實現，並由於作為導電的導電金屬層26可被移除，1299969 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for fabricating an ic carrier for selective electroplating, and more particularly to a method for selectively electroplating without conductive lines. [Prior Art] Due to the trend of thin and light electronic products and the increasing functions, the number of I/Os in the chip has increased rapidly, and the relative packaging technology has been continuously updated. Nowadays, it is produced at a high level. The Flipchip technology has been used in most of the mouth, and the package density has been continuously increased. Conventionally, a 5 〇 micron line fine line is formed on a Build up material such as a glass reinforced resin material (prepreg) layering method, and 铜·5~5· 〇 薄 薄 铜 铜 铜 铜The skin is used as a conductive layer of pattern piating. Finally, the thickness of the base copper of 1·5~5·Oum is bitten by flash etching. This method requires a rough surface and a glass fiber due to the thin copper skin. Strengthening the bonding of resin materials requires a certain degree of rough surface structure, but this structure will cause the bite and etch depth to be strengthened during rapid etching, resulting in loss of line width after plating, and the amount of bite cannot be based on the thickness of the bottom copper. Further reduction, it is not possible to produce a higher density carrier having a finer pitch of 50 micrometers or less. In addition, when nickel gold is electroplated on the wiring layer of the package carrier board, in order to introduce the current required for electroplating into the carrier board, especially the circuit layer to be electroplated, it is necessary to transmit the conductive line connected to the circuit layer through 1299969. This method can completely cover the secret layer with the electroplated nickel i layer. However, the conductive wire will remain in the carrier after the completion of the electric ore, and occupy a limited wiring space. If you want to reduce the wiring space of the conductive wire, and the width of the guide hole is made narrower, it will lead to the plating of it! The thickness of the layer is from the thickness of the layer. Therefore, the reduction of the guide is not high. Cloth _ degree approach. Xin has other methods of making non-conductor carrier plates, but those methods do not completely cover the circuit layer with electroplated nickel-gold layer in order to omit the conductive lines, which means that there is only an electric gold layer on the circuit layer. 'Jing can't cover the electric Lin Jin. In the case of carrier-board packaging technology, it is indeed necessary to carry out an electric ore procedure on the circuit layer to completely cover the circuit layer, but the presence of a conductive wire or a component can be completed after completion of the wire sequence. SUMMARY OF THE INVENTION The main object of the present invention is to provide a high-density non-conductive wire selective plating plate carrier method, using a special resin layer, the resin layer is a polymer organic material thickness 1~5um first coated on the thick Copper Foil can be 12um back rough surface (Mat仂Side), and then pressed onto the fiber-filled resin reinforcement (Prepreg) by conventional carrier plate lamination press bonding technology, and then the copper skin is completely The exposed resin layer is removed, the roughness of the back surface of the copper skin is utilized, and the conductive metal layer is applied, and the surface of the exposed resin layer has roughness, so that the adhesion of the conductive metal layer can support the subsequent process. 1299969. After the special combination of the materials, the special emphasis on the glass fiber reinforced resin material (prepreg), and then provide a suitable conductive metal layer interface, the formation of the conductive metal layer can be used conventionally Sputtering or electroless deposition (Electroless deposit) method, the conductive metal can be steel, the following chemical copper as a day to form a very thin chemical steel thickness of 6~2 birds, through the field shot After the hole, the Nikon chemical copper layer acts as a mask for the gel removal. _ (mask), after the slag is removed, the chemical is again exposed to the surface of the special resin, and the outer layer of the special resin layer is applied to the chemical copper layer. The strength of the force, and after the coverage, can still provide effective adhesion to make metal lines, through the transfer of both shadow transfer and pattern plating, which is the conventional semi-additive method (semi additive) Process, SAP) technology to make fine lines, and finally through a quick replenishment, as long as the thin chemical copper layer is bitten, this production method can improve the production line capacity to 30 micrometer line pitch (Line pitch), conventional 1 (: Board_巧玻璃纤Resin glutinous materials such as BT Prepreg can not form a good coarse sugar content on the surface to apply sufficient adhesion. The electric metal phase is semi-layered. (The process is to make a line of 3 〇 micron line spacing. The method of making fine lines and improving the yield. In addition, by the characteristic of the outer special resin layer for the strong adhesion of the chemical copper layer, after the high-density line is formed, it is special between the adjacent metal lines. On the lipid layer and the metal line, the bribe or chemical deposition method is applied to form a thin chemical copper layer as a & electricity. The conductive metal layer is used to transfer the electric current from the periphery of the substrate to the carrier (10). On the scale road layer, the light gang (phQtQ_resist〇r) 1299969 can be used as a dry film or as a route and a domain. This paste has a wire metal for the key, and it is completely covered by the The electroplating and crucible of the live line can be removed because the chemical copper layer can be removed, and after the green output of 6 is provided, the lead for the electroplating conduction is provided and the material is not touched, and the shaft increases the space available. , u purpose, the choice of high density non-conductive wire of the invention The electric method is mainly characterized in that the outer layer special resin layer is used for the characteristics of the clothing, and after multiple times of covering and removing the U layer adsorption force, the first all-line line is electrified on the chemical copper layer; The layer secret remains in the adhesion of the resin layer. The metal edge layer 'can provide enough __ force due to the resin layer material to make the chemical copper layer slow down during the manufacturing process, so it will not fall off. The invention does not use the conventional selective electric ore carrier manufacturing method 'the conventional method uses the wire line which occupies the wiring space, and the new method can reduce the wiring occupied by the conductive line because it does not occupy the conductive line such as the bridle line. Space to increase effective wiring density. The advantages and spirit of the present invention will be further understood from the following description of the accompanying drawings. [Embodiment] Please refer to Figs. 1A to 1P'. Fig. 1A to Fig. 1P are schematic diagrams showing a method of fabricating a selective plating 1C carrier for a high-density non-conductive line. Before carrying out the process of the present invention, it is necessary to prepare the carrier 10 as shown in the third drawing. The most characteristic feature of the carrier 1G is that the resin-coated layer 15' resin layer 15 of the special material of the glass fiber-added material 14 covering the inner layer 12 of the inner layer 12 is coated on the copper 16 to IC The composite material of the resin layer 15 and the copper skin 16 is bonded to the glass fiber reinforced resin material 14, for example. Since the back surface of the copper sheet 16 is a rough surface, the resin layer 15 is roughened, and then a material is formed on the resin layer 15 (especially chemical copper; a chemical metal layer as shown in the first ic 1F) 18, 22, as shown in the first ικ图 conductive metal layer 26), Gu layer 15 Lin (four) rape _# focus, the financial subject to follow-up plus. As shown in the figure ία~ij, 'from the solder ball surface (_ _) of the carrier 10 and the resin layer 15 of the Die Slde, the circuit layer 24 to be plated thereon is formed (eg, In the ij diagram, two circuit layers 24) on the solder ball surface and the IC bonding surface, respectively. Then, according to the method of making the selective electro-mineral 1C carrier plate of the high-density non-conducting wire according to the present invention as in the first 1K to 1P, the circuit of the circuit layer is still performed in the absence of the conductive wire. And a different type of circuit layer is selected on the solder ball surface and the Ic bonding surface to selectively form the electroplated nickel gold layer 30 as shown in the fourth (4) on the wiring layer 24. * * 续 续 如 如 υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ υ In the case of electro-mine, at least as shown in Figure I, as a conductive conductive metal layer 26 (which may be splash or chemical sink and W, as described below with chemical copper), and then by the conductive metal layer% 9 1299969 The electroplating current is transmitted to the carrier board 10, and if the 帛1G gqing selectively elects the electric gold layer 3G on the circuit layer 24, the second dry film 28 is removed as shown in the first lp_ Conductive surface layer 26. In this way, because the domain lipid layer 15 can produce 26 _ force for the conductive gold, the above-mentioned ageing method can be realized at a high yield, and can be moved due to the conductive conductive metal layer 26. except,
文本I明的方法可在完成電鍍程序後沒有導電線或類似元件的存 在，進而增加可佈線的空間。 在進行如第1N圖所示之電鍍製程前，將必須保留的導電金屬層％ 、士第1L圖所tf之第—乾膜層28保護之’將不必要的導電金屬 層26如第1M圖所示移除之，然後在如第m圖所示進行電鑛程序 而形成電鍍鎳金層30，最後如第lp _示移除第二乾膜層28、 導電 2626 可為鱗__leSS C0pper) 和濺鑛銅（sPUttering co歉)其中之_，而電鑛錄金層3〇則可 為電鍍鎳、電鍍金和上述組合其中之_。 =層15賴細26崎，叫在她高密度無導 電線之細_丨_製作妓巾，喊翻旨層π對施作導 電金細糊姆曝屬（W學罐屬說明之） 具有足夠__力，秘在如第叫F _私鮮金沉積屬 18、22以及如第1K圖所示之導電金屬層26經過多次施作/去除 後1終贿於鑛上的辉賴層22柯 去除 電金娜也不德，而使得本發明 = 1299969 仍可進行選擇性電鍍。 樹脂層15之所以對導電金屬層26具有較佳的附著力，是因在如 第1A圖所示之樹脂層15是一種高分子有機材料，以厚度卜5_ 先塗佈於厚銅皮16(C〇PPer F〇il)，而可為12_的背面粗輪面 (Matte Side)，然後以習用载板增層熱壓壓合技術壓著於玻纖樹 脂加強材料(Pr印reg)上，再如第1B圖所示將銅皮16完全去除露 出樹脂層15，利用銅皮16背面的粗糙度，再以如第lc圖至^ 圖所示之製造方法做出導電層24，而朋有粗糙度所明著力可 以支持後續製程的施作。 雖然線路層24主要是制f知製程步騎形成，但底下說明利用 樹脂層上施作料電金屬層以半加層法(semi_addi咖 师cess，SAP)技術可製作細線路至3〇微米線距線路層％的形成 方式。 如第1F ®所示之餘結構，以機械麻或f射航施作微小導通 孔(micro via)，如第1D圖所示。接著先如第1E圖所示完全移除 此化學金屬層18後，在如第1F圖所示形成Q 6〜—薄化學金屬 層22。最後，藉著如第1G圖所示之圖案化的第一乾膜層23，在 未被第-乾膜層23覆纽的第—化學金屬層22上施以電鍵金屬 (可為銅)形成線路層24(如第1H圖所示），並去除第-乾膜層 23(如第II圖所不）以快速餘刻只要將很薄的化學銅層原先被乾膜 層23覆蓋的地區咬餘掉，以此製作出30微米線距的線路層24 / 1299969 藉由以上較佳具體實施例之詳述，係希望能更加清 - 楚描述本發明之特徵與精神，而並非以上述所揭露的 較佳具體實施例來對本發明之範疇加以限制。相反 地，其目的是希望能涵蓋各種改變及具相等性的安排 於本發明所欲申請之專利範圍的範疇内。 【圖式簡單說明】 ^ 第1A〜1P圖為本發明高密度無導電線之選擇性電鍍1C載 * 板製作方法之示意圖。 【主要元件符號說明】 10載板 12内層線路層 Φ 14玻璃纖維加強材 15.樹脂層 16銅皮 ^ 18、22化學金屬層 20樹脂層開口 23第一乾膜層 25線路層 26導電金屬層 12 1299969 28第二乾膜層 30電鍍錄金層The text I method can be used without the presence of conductive wires or the like after the plating process is completed, thereby increasing the space available for wiring. Before performing the electroplating process as shown in FIG. 1N, the conductive metal layer % that must be retained, and the first dry film layer 28 of the first embodiment of Tf are protected by the unnecessary conductive metal layer 26 as shown in FIG. The removal is shown, and then the electroplating process is performed as shown in the mth figure to form the electroplated nickel gold layer 30, and finally the second dry film layer 28 is removed as shown in the first lp_, and the conductive 2626 can be scaled __leSS C0pper) And the splashing of copper (sPUttering apologize), and the electroplating gold layer 3 can be electroplated nickel, electroplated gold and the above combination. = layer 15 depends on the fine 26 saki, called in her high-density non-conductive line of fine _ _ _ 妓 妓 , , , 翻 翻 π π 对 对 对 对 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电__力,秘, as the first called F _ private gold deposited genus 18, 22 and the conductive metal layer 26 as shown in Figure 1K after multiple application / removal 1 bribes on the mine Ke removed the electricity Jinna and did not, so that the invention = 1299969 can still be selectively electroplated. The reason why the resin layer 15 has a good adhesion to the conductive metal layer 26 is that the resin layer 15 as shown in FIG. 1A is a polymer organic material, and the thickness is first applied to the thick copper skin 16 ( C〇PPer F〇il), which can be 12_ of the back side of the matte side (Matte Side), and then pressed on the glass fiber resin reinforcement material (Prprint reg) by the conventional carrier layer build-up thermocompression bonding technique. Further, as shown in FIG. 1B, the copper skin 16 is completely removed to expose the resin layer 15, and the conductive layer 24 is formed by the manufacturing method as shown in FIG. 1 to FIG. The roughness is clearly supported by the subsequent processes. Although the circuit layer 24 is mainly formed by the process, the bottom layer shows that the thin metal layer can be fabricated by the semi-additive method (Semi-addi Maker, SAP) technology on the resin layer. The formation of the circuit layer %. The remaining structure shown in 1F® is used as a micro via for mechanical hemp or f-jet, as shown in Figure 1D. Next, after the chemical metal layer 18 is completely removed as shown in Fig. 1E, a Q 6 - thin chemical metal layer 22 is formed as shown in Fig. 1F. Finally, by forming the patterned first dry film layer 23 as shown in FIG. 1G, a conductive metal (which may be copper) is formed on the first chemical metal layer 22 which is not covered by the first dry film layer 23. The wiring layer 24 (as shown in FIG. 1H), and removing the first dry film layer 23 (as shown in FIG. II) to quickly engrave the area where the thin chemical copper layer is originally covered by the dry film layer 23 Remaining, to create a 30 micron line-by-line layer 24 / 1299969. It is intended that the features and spirit of the present invention will be more clearly described, but not disclosed above. Preferred embodiments of the invention are intended to limit the scope of the invention. On the contrary, the intention is to cover various modifications and equivalent arrangements within the scope of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS ^ 1A to 1P are schematic views showing a method for fabricating a selective plating of a high-density non-conductive wire according to the present invention. [Main component symbol description] 10 carrier 12 inner layer circuit layer Φ 14 glass fiber reinforcement material 15. resin layer 16 copper skin 18, 22 chemical metal layer 20 resin layer opening 23 first dry film layer 25 circuit layer 26 conductive metal layer 12 1299969 28 second dry film layer 30 plating gold layer