TWI299058B - - Google Patents

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TWI299058B
TWI299058B TW93109571A TW93109571A TWI299058B TW I299058 B TWI299058 B TW I299058B TW 93109571 A TW93109571 A TW 93109571A TW 93109571 A TW93109571 A TW 93109571A TW I299058 B TWI299058 B TW I299058B
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Taiwan
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polishing
particles
grinding
polishing composition
cerium oxide
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TW93109571A
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Chinese (zh)
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TW200504188A (en
Inventor
Maejima Kuniaki
Miyabe Shinsuke
Izumi Masahiro
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Nippon Chemical Ind
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12990581299058

本發明係有關於斟# ρ ^ β γ Ί Ί · 導體晶圓上的-氧仆石々片玻埚(g ass disk)、光罩、 主成八+ 絕緣膜、光學玻璃等的以氧彳卜功炎 ,二之化合物表面進行研磨之研 =矽為 五、發明說明(1) 【發明所屬之技術領域】 法。 ^及使用该研磨用組合物之研磨方 【先前技術】 在磁片玻璃、光罩、半導體晶圓 — 膜、光學玻璃等的以氧化珍為軋化矽絕緣 使用鈽、氧化鋁、二氧化二 刀.,化5物表面研磨係 访唉 ^ 乳化石夕(fumed silica)、膠髀— =4。4寺別是飾對二氧化石夕表面有極為優 ^一乳化 兩研磨速度。鈽的研磨速产切:作用而得到 倍以及其優位性是確定的二 w "、、一乳化矽研磨劑的1 〇 述含:體:::為”,磨劑。上 於係以膠體狀分散在pH 9〜丨 氧化♦顆粒由 =的機械作用,與以驗學=氧化人 作用進行矽精密研磨。石夕是 :2予作用的後合 能以一般膠體二氧化石夕盥少旦二1柔权且鹼的材料, 易刮傷和引起多餘的浸蝕的傾向。 口而亦有谷 與上述相比,磁片玻璃、 化石夕絕緣膜、光學玻璃等的 %^體晶圓上的二氧 磨亦需要晶圓1。倍以上的研磨時門吊::使僅僅拋光研 中使用粒子徑大的二氧化矽二古f:使用1。研磨劑 或以回?辰度使用二氧化石夕之The present invention relates to 斟# ρ ^ β γ Ί Ί · an oxygen oxime on a conductor wafer, a gss disk, a photomask, a main octagonal insulating film, an optical glass Bu Gongyan, research on the surface of the compound of the second compound = 矽 is five, the invention description (1) [Technical field of the invention] ^And the grinding method using the polishing composition [Prior Art] In the magnetic glass, the reticle, the semiconductor wafer-film, the optical glass, etc., the oxidized ruthenium is used for the ruthenium, the alumina, the second oxidization Knife., 5 surface grinding system visits 唉 ^ Fumed silica (fumed silica), plastic 髀 - = 4. 4 temples are decorated on the surface of the dioxide has excellent emulsification two grinding speed.研磨 研磨 研磨 : : : : : : : : : : : : : : : : 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及Disperse in the pH 9 ~ 丨 oxidize ♦ granules by the mechanical action of =, and the precision of grinding by the test = oxidizing human action. Shi Xi is: 2 after the action of the post-combination with the general colloidal dioxide 2 1 soft and alkali material, easy to scratch and cause excessive erosion. The mouth is also compared with the above, the magnetic glass, the fossil eve insulating film, the optical glass, etc. Oxygen grinding also requires wafers 1. When the grinding is more than doubled, the door hanger is used: to use only the cerium oxide with a large particle diameter in the polishing process: use 1. The abrasive or the use of the oxidized stone It

7082-6271-PF(N2).ptd $ 7頁 12990587082-6271-PF(N2).ptd $7 Page 1299058

但研磨成本高並不是 五、發明說明(2) 使用南濃度的驗等之手段已被實施 合理的狀態。 :半V體晶圓上的二氧化 疋在合成樹脂發泡體或麂 開之疋盤上載置被研磨 、膠體二氧化矽等的研磨 一般而言,磁片玻璃、光罩 矽絕緣膜、光學玻璃等的步驟, 皮調合成皮革等組成之研磨布展 物,按壓迴轉,定量供給氧化飾 劑而進行研磨之方法。 以矽為研磨對象之研磨用 揭露使用在含有鹼成分之溶液 子的溶液的基本技術(參照例 磨’與在這之前,是使用例如 粒所謂機械研磨不同,其成分 應用對晶圓等的浸蝕性。即, 的表面形成薄薄軟質的浸蝕層 子的機械作用除去而進行研磨 由於是以溶液具有之鹼成分的 須是pH 7以上的鹼性區域。也 數值其化學作用力減弱,研磨 鹼區域其作用力增強而加快研 組合物的專利申請很多,已 中分散細微膠體狀氧化矽粒 如專利文獻1 )。上述研 鑽石砥石,或硬質的鋁系砥 驗的化學作用,具體言之是 猎由驗的腐钱性,在晶圓等 。藉由係為膠體狀氧化矽粒 。研磨用組合物溶液的pH, 化學作用進行研磨,因此必 就疋說p Η罪近7顯示中性的 速度減緩’又靠近pH 14強 磨速度。 因此,對於上述研磨,對研磨用組合物溶液的性質是 極為重要的因素,其性狀和性質,具體言之是設計浸蝕層 的生成速度與除去之研磨速度平衡,必須穩定對長時間變 =和溫度變化等之外的要因。特別是,pH穩定的範圍是非 ¥重要的。前述浸蝕層,是藉由研磨用組合物中所含之膠However, the high grinding cost is not the fifth. The invention description (2) The use of the southern concentration test has been implemented in a reasonable state. : cerium oxide on a semi-V-body wafer is placed on a synthetic resin foam or a creped disk, and is ground, a colloidal cerium oxide, etc. Generally, a magnetic glass, a reticle, an insulating film, and an optical In the step of glass or the like, a polishing cloth composed of a leather or the like is synthesized, and the method of polishing is performed by pressing and rotating to quantitatively supply an oxidizing agent. The basic technique for polishing a solution using a solution containing an alkali component (refer to the example of grinding) is different from the prior art in that the use of a solution such as a particle is called mechanical polishing. That is, the surface is formed by the mechanical action of the thin and soft etched layer to be removed, and the grinding is performed because the alkali component of the solution having the alkali component is pH 7 or higher. There are many patent applications in the region where the force is enhanced and the composition is accelerated, and fine colloidal cerium oxide particles have been dispersed as in Patent Document 1). The above-mentioned research on the chemical role of diamond vermiculite, or hard aluminum system, in particular, the rot of the hunters, in wafers, etc. By colloidal cerium oxide particles. The pH of the polishing composition solution is chemically ground, so it is necessary to say that the p Η 近 近 近 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 显示 近 。 。 。 。 。 。 Therefore, for the above-mentioned grinding, the properties of the polishing composition solution are extremely important factors, and the properties and properties thereof, specifically, the formation speed of the design etching layer and the removal grinding speed are balanced, and must be stabilized for a long time change = and Factors other than temperature changes. In particular, the range of pH stability is not important. The etching layer is made by the glue contained in the polishing composition.

1299058 五、發明說明(3) 體二氧化矽粒子的機械作用 有適當尺寸 戍顿作用 習知已揭靈士·办& 關於二氧化:ί:研磨用組合物作為晶圓等的研磨 乳化石夕粒子,以揭露有梦膠液(silica s〇i)以 已揭 被除去的,因此其粒子必須具 劑。關於 及石夕谬(silica sen )7。 露有使用二氧例如專利文獻”。又 (SlUrry)做為半S11 ica)之水性分散泥漿 劑(參照例圓之絕緣層(二氧切幻的研磨 子組成之膠體二氧變之二 之S體二氧化丄珠狀連結形體的二氧化㈣子組成 獻/)。一 夕,,、、貝不有高的矽研磨速度(參照例如專利文 之f :面4= 類以上之粒徑混合系所謂(Syt〇n ) 二:(特斂為平均粒子徑4〇nm具有10〜20 0nm之廣泛粒子 使用f照專利文獻6以及7)。粒子任意混合者 衣/ a…、法判畊,但其製品的研磨速度高是近年發現 的。但是,過小粒子的存在會造成與其他藥品之混合穩定 性的惡化,過大粒子的存在則有刮傷之發生和填入配線溝 的疑慮,下一世代必須加以改良。在專利文獻8,即記載 使用類似Syton之2種類以上之粒徑的混合系。其中沒有過 大粒子的存在,2種類以上之粒徑的混合系優異,哪一種 量比在過廣範圍無法判定,且沒有發現無意識使用SYT〇N 之習知技術的進步。 又’本發明人等發現15〜3 Onm與60〜1〇 〇nm之2種類之粒1299058 V. INSTRUCTIONS (3) The mechanical action of the body cerium oxide particles has an appropriate size. It has been revealed that the sulphuric acid is used as a polishing emulsifier for wafers and the like. The particles are used to expose the silica s〇i to be removed, so that the particles must have a dose. About and 希夕谬 (silica sen) 7. An aqueous dispersion slurry using dioxane (for example, the patent document) and (SlUrry) as a semi-S11 ica) (refer to the insulating layer of the circle (the colloidal dioxygenation of the dioxin-cutting abrasive) The bismuth (four) sub-component of the body cerium oxide bead-like structure is composed of /), and the cerium is not high in the enthalpy polishing rate (see, for example, the patent f: face 4 = the above-mentioned particle size mixing system) (Syt〇n) 2: (Specially, the average particle diameter is 4 〇 nm, and the wide particles having 10 to 20 0 nm are used according to Patent Documents 6 and 7). The particles are mixed with the clothes / a... The high polishing rate of the products has been discovered in recent years. However, the presence of too small particles may cause deterioration of the mixing stability with other drugs, and the presence of excessive particles may cause scratches and doubts about filling the wiring trenches, the next generation. In Patent Document 8, a mixed system having a particle size similar to two or more types of Syton is used. Among them, there is no excessive particle, and a mixed system of two or more kinds of particle diameters is excellent, and which amount is too wide. The range cannot be determined and there is no Now unintentional use of conventional progressive SYT〇N art. And 'The present inventors have found that 15~3 Onm and second type of particles of 60~1〇 〇nm

7082-6271-PF(N2).ptd 第9頁 1299058 五、發明說明(4) 徑的特定量比混合系之研磨組合物對矽研磨 能’而進行申請本發明。 *揮高的性 …硬質二氧化石夕表面的研磨必須為膠 疋取近發現的,已揭露有以研磨除去易殘留於二f 面之飾粒子之目的而使用膠體二氧化石夕之方法η: 讀9以及1G) n鐵石^研磨時以水 y體專利 心:現刮傷少且平坦疊痕(lapping)(參二 文獻11 )。然而,若不探討有關任一種二氧化矽粒子 液的技術’就無法發揮高的研磨性能。 ’、 另一方面,針對液組成已有非常多提案是以二化 象。上述專利文獻1 ’即揭露藉由該懸濁液的pH 在1〇· 5〜12. 5的範圍,研磨速度增加。又,已揭露有添加 胺類的研磨用組合物(參照例如專利文獻12 ),由水膠體 二氧化矽分子量1〇萬以上的水溶性高分子水溶组 之研磨用組合物(參照例如專利文獻13)。且已揭;有且J 二以水^性fe之一種的哌嗪(piperazine)還有二氧化矽膠 體的二氧化矽為基準,含有10〜80重量%之研磨用組合物/ 之研磨方法(參照例如專利文獻1 4 )。然而,該等提案之 方f在於鹼性的母液中分散膠體二氧化矽或二氧化矽膠等 的f細粒子組成之研磨劑的基本構造的溶液中,藉由添加 各,t加? Ϊ提高研磨劑的分散性,可增加研磨的穩定 欧仁f疋此長期改善習知的研磨用組合物的研磨速度。 卜已揭路有藉由添加使用酸解離定數的相反數的對 數值· 〇 1 2 · 0之弱酸以及/或弱鹼基,弱酸與強鹼基,弱7082-6271-PF(N2).ptd Page 9 1299058 V. DESCRIPTION OF THE INVENTION (4) The specific amount of the diameter is applied to the present invention in comparison with the polishing composition of the mixing system. *Swinging high-grade...The grinding of the surface of the hard sulphur dioxide must be discovered recently. It has been revealed that the method of using colloidal silica is used for the purpose of removing particles that are easily left on the surface of the f-plane. : Read 9 and 1G) n iron stone ^ water y body patented when grinding: less scratches and flat lagging (see document 11). However, high polishing performance cannot be achieved without the technique of discussing any of the cerium oxide particle liquids. On the other hand, there have been many proposals for liquid composition that are secondary. In the above-mentioned Patent Document 1', the polishing rate is increased by the pH of the suspension in the range of 1 〇 5 to 12. 5 . In addition, a polishing composition containing a water-soluble polymer water-soluble group having a molecular weight of 1,000,000 or more of hydrocolloid cerium oxide has been disclosed (see, for example, Patent Document 13). ). Further, it has been disclosed; and J 2 contains a piperazine of one type of water and a cerium oxide colloidal cerium oxide, and contains 10 to 80% by weight of a polishing composition/grinding method ( Reference is made, for example, to Patent Document 14). However, in the case of the above-mentioned proposal, in the alkaline mother liquid, a solution having a basic structure of an abrasive composed of fine particles such as colloidal cerium oxide or cerium oxide rubber is dispersed, and t is added by adding each. ΪImproving the dispersibility of the abrasive to increase the stability of the polishing. The polishing rate of the conventional polishing composition is improved for a long period of time. Bu has revealed that by adding the opposite number of pairs using acid dissociation numbers, 弱 1 2 · 0 weak acid and / or weak base, weak acid and strong base, weak

1299058 五、發明說明(5^ " ' ' ---------- 酸與弱鹼基兩者任一組合且 液之膠體二氧化矽έ合物 ^ : Ρ緩衝作用之缓衝溶 17以及18)緩衝液的使用,雖二利文獻15、16、 化少,且重複使用亦不變化之二條件變化之pH的變 低研磨速度低,又為了改善上^二加=磨用組合物,但pH 濃度,膠體的穩定性惡化黏产拷:口成緩衝液之成份的 是可穩定使用的商品。 又9问,最終引起膠化,並不 已知有以含有氟化I弓之酸性二 體電路上的鈦的方法(參照例如專=矽泥漿作為研磨積 磨二氧化矽之方法。習知有在各領域=獻19),以鹼性研 银一氧化碎表面之方法,但含有氣^、知之以氟素離子浸 組合物是本發明人等的發現。這$因離子之膠體二氧化矽 定性,而採用在研磨時添加之日 為不能確保膠體的穩 【專利文IU】 Θ用完的方法。 美國專利編號3328 1 41說明書 【專利文獻2】 美國專利編號3 1 702 73說明書 【專利文獻3】 美國專利編號4 9 1 0 1 5 5說明書 【專利文獻4】 特開平7 -22 1 0 5 9號公報 【專利文獻5】 特開平2 0 0 1 -1 1 43 3號公報 【專利文獻6】1299058 V. Description of the invention (5^ " ' ' ---------- Any combination of acid and weak base and liquid colloidal cerium oxide compound ^: buffer of buffering effect The use of the solvent 17 and 18) buffers, although the two documents 15,16, less, and repeated use of the two conditions change the pH of the low low polishing rate, in order to improve the upper two plus = grinding The composition, but the pH concentration, the stability of the colloid is deteriorated. The composition of the mouth-forming buffer is a stable use product. Further, when asked, it eventually causes gelation. It is not known to use titanium on an acidic two-body circuit containing a fluorinated I bow (refer to, for example, special mud slurry as a method of grinding and grinding ruthenium dioxide. Various fields = 19), the method of alkaline calcification of silver to oxidize the surface, but containing a gas, known as a fluorine ion immersion composition is the discovery of the present inventors. This is determined by the colloidal cerium dioxide of the ion, and the addition of the day of grinding does not ensure the stability of the colloid [Patent IU] Θ used up. US Patent No. 3328 1 41 Specification [Patent Document 2] US Patent No. 3 1 702 73 Specification [Patent Document 3] US Patent No. 4 9 1 0 1 5 5 Specification [Patent Document 4] Special Kaiping 7 -22 1 0 5 9 No. [Patent Document 5] Japanese Patent Publication No. 2 0 0 1 -1 1 43 No. 3 [Patent Document 6]

1299058_ 五、發明說明(6) 美國專利編號348 5 6 08說明書 【專利文獻7】 美國專利編號40 579 3 9說明書 【專利文獻8】 特開平2 0 0 2 -3 02 74號公報, 【專利文獻9】 特開平2 0 0 0 -3 433 9 0號公報 【專利文獻1 0】 特開平2 0 0 1 -3 08 0 5 0號公報 【專利文獻1 1】 特開平2 0 0 1 -3 1 5 0 6 1號公報 【專利文獻1 2】 美國專利編號4 1 6 9 3 3 7說明書 【專利文獻13】 特開平2 - 1 5 86 84號公報 【專利文獻1 4】 特開平5 - 1 547 0 6號公報 【專利文獻15】 特開平1 1 -3 1 5 273號公報 【專利文獻16】 特開平1 1 -3 02 6 3 5號公報 【專利文獻17】 特開平1 1 -3 02 634號公報 【專利文獻18】1299058_ V. INSTRUCTIONS (6) US Patent No. 348 5 6 08 Specification [Patent Document 7] US Patent No. 40 579 3 9 Specification [Patent Document 8] Japanese Patent Publication No. 2 0 0 2 -3 02 74, Patent Literature 9] Japanese Patent Publication No. 2 0 0 0 -3 433 9 0 [Patent Document 10] Japanese Patent Publication No. 0 0 0 1 -3 08 0 5 0 [Patent Document 1 1] Special Kaiping 2 0 0 1 -3 1 Japanese Patent Publication No. 4 1 6 9 3 3 7 [Patent Document 13] Japanese Patent Publication No. Hei 2 - 1 5 86 84 (Patent Document 1 4) Special Kaiping 5 - 1 547 [Patent Document 15] Japanese Laid-Open Patent Publication No. Hei No. Hei 1 1 - 3 1 5 273 [Patent Document 16] Japanese Patent Laid-Open Publication No. Hei No. Hei 1 1 - 3 02 6 3 5 [Patent Document 17] Special Kaiping 1 1 - 3 02 634 No. [Patent Document 18]

7082-6271-PF(N2).ptd 第12頁 1299058 五、發明說明(14) m 詡 i ift m δ si 苟u A nn 31 Μ 揶 3 Η· 3 ί〇 〇 W 河 ? 0 乂 IQ 1 m H· o H a w 藤 河 ο 1 m Η· P a ο S m ο 乂 1 υι Η· 00 ο i m w B 河 Η ιΡψ _ ο 1 m 41 Η ύ 砘 Ml Ff1 _ to Ch UD μ-1 O CO o ο Η ο ο Μ Η- Ο ω ο » 盛 Μ Η- M 〇 o ο Η- ο ο I-1 Η· ω ο ο » m DO l·-1 in H- 〇 CJ o ο Μ ο Ο Η-1 Η- ο Η· ο ο Vt- ή 渲 Η- H- ω h* o 山 o ο Η- ο Ο Η· ϋι ο ϋι Ο Vr ή m. CO o I-1 o Cn o ο Μ· ο Ο Η- Η- μ ο b Ο Vr ή »1 [實施例3〜6以及比較例4〜7 ] 以下記載青板玻璃之表面研磨之範例。青板玻璃是預 先以鈽研磨材(Speedfam公司CO#SF620 )研磨者。使用7082-6271-PF(N2).ptd Page 12 1299058 V. Description of invention (14) m 诩i ift m δ si 苟u A nn 31 Μ Η3 Η· 3 ί〇〇W River? 0 乂IQ 1 m H· o H aw 藤河ο 1 m Η· P a ο S m ο 乂1 υι Η· 00 ο imw B 河Η ιΡψ _ ο 1 m 41 Η ύ 砘Ml Ff1 _ to Ch UD μ-1 O CO o ο ο ο ο Μ Η - Ο ω ο » 盛Μ Η- M 〇o ο Η- ο ο I-1 Η· ω ο ο » m DO l·-1 in H- 〇CJ o ο Μ ο Ο Η-1 Η- ο Η· ο ο Vt- ή Η - H- ω h* o o Η ϋ ϋ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - Η-μ ο b Ο Vr ή »1 [Examples 3 to 6 and Comparative Examples 4 to 7] An example of surface polishing of slate glass is described below. The slab glass is pre-grinded with enamel abrasives (Speedfam CO#SF620). use

第20頁 7082-6271-PF(N2).ptd 1299058_ 五、發明說明(15) 表2所示之内容的研磨組合物實施研磨試驗,其結果記載 於表2。 研磨條件係以下列方法實施鏡面研磨。 〈研磨條件〉 研磨裝置:定盤直徑6 5 0 mm,兩面研磨裝置 定盤迴轉速度:30 rpm 研磨布:Suba 400 (Rodale公司製造) 負荷重量:150 g/cm2 研磨組合物流量:3 0 0 m 1 /分鐘 研磨時間:7分鐘 被加工物:青板玻璃 研磨組合物的pH是以pH計測定。研磨面的評價是在集 光燈下以肉眼觀察靄(HAZE)的發生狀態。研磨速度是以研 磨前後的白板玻璃的重量差求出厚度變化而換算之。 以實施例3〜6可發現,以小粒子配合特定量大粒子可 明顯提高研磨速度。在比較例4,只有小粒子以及比較例 5〜7大粒子的配合比增加可看出研磨速度顯著降低。Page 20 7082-6271-PF(N2).ptd 1299058_ V. INSTRUCTION DESCRIPTION (15) The polishing composition of the content shown in Table 2 was subjected to a polishing test, and the results are shown in Table 2. The polishing conditions were subjected to mirror polishing in the following manner. <Polishing conditions> Grinding device: fixing plate diameter 65 mm, double-side grinding device fixing speed: 30 rpm Grinding cloth: Suba 400 (manufactured by Rodale) Load weight: 150 g/cm2 Grinding composition flow rate: 3 0 0 m 1 /min Grinding time: 7 minutes Workpiece: The pH of the green plate glass polishing composition was measured by a pH meter. The evaluation of the polished surface was carried out by visual observation of the state of occurrence of hydrazine (HAZE) under a spotlight. The polishing rate is converted by the change in thickness of the weight of the whiteboard glass before and after the grinding. It can be seen from Examples 3 to 6 that the mixing of small particles with a specific amount of large particles can significantly increase the polishing rate. In Comparative Example 4, only the increase in the mixing ratio of the small particles and the large particles of Comparative Examples 5 to 7 showed that the polishing rate was remarkably lowered.

7082-6271-PF(N2).ptd 第21頁 1299058 五、發明說明(16) m 藝 m m §龍 ^ 11 nn m a Μ m 河 1 3 Η· a s» g 舖 S υϊ Η· £ Η a W 藤 η Ώ 1 m Η· ;g 3 0) 8 藤 m Κ m £ GO Ο 1 m 屮 Η 河 Ml [Πφ 岫 ο I &amp; 屮 Η 藤 河 jjnfl imp _ μ 〇γϊ Q0 o CO ο Ο Κ1· ο Ο Η·1· Μ* Ο ϋι ID Cn m m 望 ω KD ΓΟ 三 CO ο ο Ξ Ο Μ* — Ο UD 〇 » m 山 班 cn OO g ο ο Ο Η1· Η w Ο GO 〇 m 諸 a Cn — Cn to ο Η1· Ο ο Ο Η1 Μ· CO Ο -J 〇 » m 渲 (Tt 瞎 H1· DO o ω ο ο Ο Μ- ο o Vt- a 51 G σι ο ο Ο Η Η4 Cn ο (Jl o Vt- a cn 山 Μ- Ο Cn ο ο Μ- ο Ο Μ- -J ο CjJ o Vt- m a CTk 酿 H1· A 〇 g Cn ο ο Ο Μ· ο o Vnr ύ -〇 [實施例4〜6以及以下記載結 例 範 的 磨 研 面 表 的 璃 81玻 ~ 片 5 i 例磁 較化 !o m曰 化 晶 結7082-6271-PF(N2).ptd Page 21 1299058 V. Description of invention (16) m Art mm § Long ^ 11 nn ma Μ m River 1 3 Η· as» g Shop S υϊ Η· £ Η a W vine η Ώ 1 m Η· ;g 3 0) 8 藤 m Κ m £ GO Ο 1 m 屮Η River Ml [Πφ 岫ο I &amp; 藤 藤河 jjnfl imp _ μ 〇γϊ Q0 o CO ο Ο Κ1· ο Ο Η·1· Μ* Ο ϋι ID Cn mm 望ω KD ΓΟ三CO ο ο Ξ Ο Μ* — Ο UD 〇» m 山班cn OO ο ο Ο Η1· Η w Ο GO 〇m a cn — Cn To ο Η1· Ο ο Ο Η1 Μ· CO Ο -J 〇» m ( (Tt 瞎H1· DO o ω ο ο Ο Μ- ο o Vt- a 51 G σι ο ο Ο Η Η 4 Cn ο (Jl o Vt - a cn Hawthorn - Ο Cn ο ο Μ - ο Ο Μ - -J ο CjJ o Vt- ma CTk Stuffed H1· A 〇g Cn ο ο Ο Μ · ο o Vnr ύ -〇 [Examples 4 to 6 and The following is a description of the example of the grinding surface of the glass 81 glass ~ piece 5 i case magnetic comparison! om deuteration

7082-6271-PF(N2).ptd 第22頁 1299058 五、發明說明(17) 磁片玻璃是使用預先以鈽研磨(Speedf am公司C0#SF6 20 )材研磨者。使用表3所示之内容的研磨組合物實施研磨 試驗,其結果記載於表3。 研磨條件係以下列方法實施鏡面研磨。 〈研磨條件〉 研磨裝置··定盤直徑6 5 0 mm,兩面研磨裝置 定盤迴轉速度:30 rpm 研磨布·· Suba 40 0 (Rodale公司製造) 負何重量:1 5 0 g / c m2 研磨組合物流量·· 3 0 0 m 1 /分鐘 研磨時間:7分鐘 被加工物:2 · 5英吋結晶化磁片玻璃 “ 研磨組合物的pH是以pH計測定。研磨面的評價是在集 光燈下以肉眼觀察靄的發生狀態。研磨速度是以研磨前2 的白板玻璃的重量差求出厚度變化而換算之。 比較比較例8與實施例7可看出,在小粒子中少量配人 ^粒子可顯著提高研磨速度。又,與實施例7〜9比較可看口 出PH J重要因f ’ pH高時研磨速度增加,相反地一 , ^ I(J , 〇 ^ 1 〇 ^ ^ ^ 了看出既素料的效果。氟素離子可促 加顯不PH低亦可進行研磨。另一方φ,在 ::曰 =濃度降低的場合,顯示即使添加劑多;無法二行: 第23頁 7082-6271-PF(N2).Ptd 1299058五、發明說明(18) m 鞠 旨 藝 m m Sf! iA m m Η m 猫 河 1 3 Η· S ί3* K 萏 ΙΩ Μ· g 3 ί〇 g _ m κ 萏 Ui Μ- g Η a m 河 ο 百 1 Ui Μ· g S! £ΰ 8 藤 Μ 灸 吁 Ui Μ· 至 CD Ο i « 41 箱 河 ίτπρ 岫 ο I m 4ί μ ιέ Μ [ΪΗι [ΙΗΡ 岫 Η 〇Γί Μ· Ο ω ο ο ο Μ- ο Η Η1 Ο UD Ο ω 諸 -j to ο μ-1 ο -J ο ο b ο ο ο KD Ο m m 00 二 上 KD kD ο ο ο ο σι Ο Ι-1 1-^ Μ- Ο Ο m 諸 kD ΓΟ VO 山 ID KD ο ο CTt ο ο ο σι Ο Η1 !-&gt; \^ ο UD Ο m m 室 H- 〇 Μ 砘 S 山 Μ· CO Ο ο Ο Μ- Ο I-J· I-J- ο Μ· Ο Ο Vt- 热 00 馳方 _到 to 00 ο VD kD Ο CO ο ο ο ο cn Ο Μ* Μ· Η ο VD Ο Vt- M m KD m δϋ 间 »-· !&gt;0 Ο ID KD ο ο Ο Ο CT. Ο Η Μ- ε ο Ο yt- Sl 懲 g Μ to -J ο VD ο ο Ο S ο ο CT* DO Ο »-« οο ο Vt&quot; 1— # 態 例 ,範 者為 再僅 型 施 時 述 上 ο 態 型 施 實 述 上 於 定 限 不 明 發 本 術 技 之 載 記 圍 範 利 專 請 申 之 明 發 本 與 有 具 7082-6271-PF(N2).ptd 第24頁 12990587082-6271-PF(N2).ptd Page 22 1299058 V. INSTRUCTIONS (17) The magnetic sheet glass is ground using a 钸 grinding (Speedf am C0#SF6 20 ) material. The polishing test was carried out using the polishing composition shown in Table 3, and the results are shown in Table 3. The polishing conditions were subjected to mirror polishing in the following manner. <Grinding conditions> Grinding device · · Plate diameter 6 5 0 mm, double-side grinding device plate rotation speed: 30 rpm Grinding cloth · Suba 40 0 (manufactured by Rodale) Weight: 1 5 0 g / c m2 Grinding Composition flow rate · 3 0 0 m 1 /min Grinding time: 7 minutes Workpiece: 2 · 5 inches of crystallized magnetic sheet glass "The pH of the polishing composition is measured by a pH meter. The evaluation of the polished surface is in the set The state of occurrence of ruthenium was observed with the naked eye under the light. The polishing rate was converted from the change in thickness of the weight of the whiteboard glass before polishing. Comparing Comparative Example 8 with Example 7, it can be seen that a small amount is distributed in the small particles. The particle size of the human particles can significantly increase the polishing rate. Moreover, compared with the examples 7 to 9, it can be seen that the pH J is important because the grinding speed increases when f 'pH is high, and conversely, ^ I(J , 〇^ 1 〇 ^ ^ ^ It is seen that the effect of the material is good. Fluoride ions can promote the addition of low pH and can be ground. The other side φ, in the case of: 曰 = concentration reduction, shows that even if there are more additives; can not be two lines: 23 Page 7082-6271-PF(N2).Ptd 1299058 V. Description of invention (18) m 鞠 艺 艺 m m Sf! iA mm Η m cat river 1 3 Η· S ί3* K 萏ΙΩ Μ· g 3 〇g _ m κ 萏Ui Μ- g Η am river ο hundred 1 Ui Μ· g S! £ΰ 8 vine灸 吁 吁 U « « « « « « « « « « « « « « ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I To ο μ-1 ο -J ο ο b ο ο ο KD Ο mm 00 二上KD kD ο ο ο ο σ Ο Ι 1--1 1-^ Μ- Ο Ο m kD ΓΟ VO Mountain ID KD ο ο CTt ο ο ο σι Ο Η1 !-&gt; \^ ο UD Ο mm Room H- 〇Μ 砘S Hawthorn · CO Ο ο Ο Μ- Ο IJ· IJ- ο Μ Ο Ο t Vt- 热 00 驰方_到to 00 ο VD kD Ο CO ο ο ο ο cn Μ Μ* Μ· Η ο VD Ο Vt- M m KD m δϋ »-· !&gt;0 Ο ID KD ο ο Ο Ο CT. Ο Η Μ- ε ο Ο yt- Sl g g Μ to -J ο VD ο ο Ο S ο ο CT* DO Ο »-« οο ο Vt&quot; 1— # 态 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例In the case of the fixed limit, the technique of the book is written by Fan Li, and the application of the application is 7082-6271-PF. (N2).ptd Page 24 1299058

五、發明說明(19) 思想實質上相同構造,亦能達到相同的作用效果,皆 在本發明之技術範圍。 白包含 例如,在上述研磨步驟是顯示破璃的研磨,但顯 面板和氧化矽膜的研磨亦可使用本發明之研磨劑。”、、象用 【發明之效果】 如以上說明,本發明之研磨組合物,由膠體溶液 成,其中該膠體溶液中,可明確區分平均一次粒子押斤級 40〜6〇nm與60〜lOOnm之2種類的氧化矽粒子是以丨:〇. 〇工 0.3的重量比的比例存在,且對整體研磨用組合物之氧1: 石夕,子的濃度是在5~4。重量%的範圍 以在pH 9· 7〜10. 7之間具有緩衝作用+臨、 /谷/夜疋 調製的,上述組合物是在小粒子配人^谷旦解之緩衝溶液 提高研磨速度,再利用pH緩衝作用二—疋1大粒子而顯著 進行二氧化石夕玻璃之表面研磨:i用曰Ϊ疋化,例如使用上述 研磨表面狀態良好,可大幅改盖=’研磨速度增快,且 明之研磨用組合物的成分中還^二的問題點。再者本發 之氟素離子或氟素配位之陰離子彳·mol/kg-Si〇2 度。 文為氟素而更提高研磨速V. INSTRUCTION OF THE INVENTION (19) The idea that substantially the same structure and the same effect can be achieved is within the technical scope of the present invention. White inclusion For example, the above-mentioned polishing step is a polishing showing the breakage of the glass, but the polishing of the display panel and the ruthenium oxide film can also be carried out using the abrasive of the present invention. ", the effect of the invention" As described above, the polishing composition of the present invention is formed from a colloidal solution in which the average primary particle loading level can be clearly distinguished from 40 to 6 〇 nm and 60 to 100 nm. The two types of cerium oxide particles are present in a ratio of 丨:〇. 〇0.3 by weight, and the concentration of oxygen in the whole polishing composition is as follows: the concentration of the stalk is in the range of 5 to 4. In order to have a buffering effect between pH 9·7~10. 7 + Pro/Valley/Night, the above composition is to increase the grinding speed in a buffer solution of a small particle with a solution of the solution, and then use a pH buffer. Effect 2 - 疋 1 large particles and significant surface polishing of the cerium dioxide glass: i used sputum, for example, using the above-mentioned grinding surface is in good condition, can be greatly modified = 'grinding speed is increased, and the polishing combination The composition of the substance is also the problem of the second. In addition, the fluoride ion or the fluorine-coordinated anion 彳·mol/kg-Si〇2 degree of the present invention.

1299058_ 圖式簡單說明 第1圖係顯示使用變化大粒子與小粒子之重量比的研 磨用組合物,研磨白玻璃表面(主面)時的研磨速度 (nm/m in) 〇1299058_ BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the polishing rate (nm/m in) when the surface of the white glass (main surface) is polished using a polishing composition that varies the weight ratio of large particles to small particles.

7082-6271-PF(N2).ptd 第26頁7082-6271-PF(N2).ptd Page 26

Claims (1)

12990581299058 皇號 9310QH71 六-、申請專利範圍 · 1· 一種研磨用組合物,適用於磁片玻璃、 =圓上的二氧化矽絕緣膜、光學玻璃等的以氧化矽為: 於y ,I物表面研磨,由膠體溶液所組成,其中該膠體 :::ί ΐ粒子與大粒子之二種的氧化矽粒+,該小粒 单抝二=次粒子徑為40nm以上、60nm以下,而該大粒子 : 人粒子徑為超過6 0 nm、1 0 0 nm以下,該小粒子比 ΐϊΐΐίHf1:0·05〜1 ·Λ3的比例存在,且 、 a物之氧化石夕粒子的濃度是在5重量%以 10 7 = 的範圍,其中該膠體溶液是以在pH 9. 了〜 • a八有緩衝作用之鹽溶解之緩衝溶液調製的;且哕 研磨用組合物f白人ηπΐΛ J 且該 素配位之陰離氣t.lmol/kg-SiQ2之㈣㈠^ 調製2方:種第1項所述,研磨用組合物的 次粒子徑40二:、二驟’將做為研磨用組合物之平均- 範圍之2種類的氧化2〇4niD以下與超過Μ1&quot;、1001&quot;以下的 重量比混合粒子之膠體溶液以1:0· 05〜1:〇· 3的 調製3方:種範圍第2項所述之研磨用組合物的 行稀釋,成’使用水或ί有鹽類之水溶液進 5重量% a J 組合物整體之氧化矽粒子的濃度為 ^ ^ y 不滿20重量%的範圍,且PH為9. 7〜10 7的膠 體溶液做為研磨用組合物。 ·(的膠 、十、夕4m :種研磨方法,藉由使用如申請專利範圍第1項所 &quot; ^用組合物研磨表面以氧化矽為主成分之化合物組皇号9310QH71 六-, the scope of application for patents · 1 · A polishing composition, suitable for magnetic sheet glass, yttria insulating film on the circle, optical glass, etc. with yttrium oxide: y, I surface grinding , consisting of a colloidal solution, wherein the colloid::: ΐ ΐ particles and two large particles of cerium oxide +, the small particles of single 拗 two = secondary particle diameter is 40 nm or more, 60 nm or less, and the large particle: The particle diameter is more than 60 nm and less than 100 nm, and the ratio of the small particles is higher than ΐϊΐΐίHf1:0·05~1 ·Λ3, and the concentration of the oxidized stone particles of the a substance is 5% by weight to 10 7 a range of = wherein the colloidal solution is prepared by a buffer solution in which a buffer having a pH of 9. 8 a buffer is dissolved; and the composition for rubbing is f white ηπΐΛ J and the gas is coordinated with the gas T.lmol/kg-SiQ2(4)(1)^ Modulation 2: According to the first item, the secondary particle diameter of the polishing composition is 40:2, and the second step will be the average of the polishing composition - 2 types of the range Oxidized 2〇4niD below with a weight ratio of more than Μ1&quot;, 1001&quot; The colloidal solution is diluted with 1:3·05~1: 〇·3 of 3:the range of the polishing composition described in item 2 of the above range, into 5 weights using water or a solution of salt The colloidal solution having a concentration of yttrium oxide particles as a whole is in the range of 2% y and less than 20% by weight, and a pH of 9. 7 to 10 7 is used as a polishing composition. · (Glue, Shi, Xi, 4m: a method of grinding, by using the compound group as the first part of the patent application &quot; 第27頁Page 27 1299058 ___案號 93109571 六-、申請專利範圍 成之被研磨物。 5 · —種研磨方法,在合成樹醋發泡體或麂皮調合成皮 革等組成之研磨布張開之定盤上載置以氧化矽為主成分之 化合物組成之被研磨物,使按壓迴轉,並供給如申請專利 範圍第1項所述之研磨用組合物而研磨被研磨物的主面。 6. —種研磨方法,使用具有表面貼附研磨部之研磨元 件的研磨裝置,使該研磨元件接觸以氧化矽為主成分之化 合物組成之被研磨的端面,使研磨元件以及/或被研磨物 迴轉,並供給如申請專利範圍第丨項所述之研磨用組合物 於端面部分而研磨被研磨物。1299058 ___ Case No. 93109571 VI-, the scope of patent application into the object to be ground. (5) A method of polishing, in which a polishing object composed of a compound containing cerium oxide as a main component is placed on a plate on which a polishing cloth composed of a synthetic vinegar foam or a suede-adjusted leather is placed, and the pressing is rotated and supplied. The main surface of the object to be polished is polished by applying the polishing composition according to item 1 of the patent application. 6. A polishing method using a polishing apparatus having a polishing element having a surface-attached polishing portion, the abrasive element being brought into contact with a ground end surface composed of a compound containing cerium oxide as a main component, and the polishing element and/or the object to be polished The material for polishing is supplied to the end surface portion and the object to be polished is ground by the polishing composition according to the above-mentioned patent application. 7082-6271-PFKN2) 第28頁7082-6271-PFKN2)第28页
TW093109571A 2003-05-06 2004-04-07 Polishing composition, preparation of polishing composition, and the method of polishing TW200504188A (en)

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TWI404598B (en) * 2008-09-03 2013-08-11 Mitsui Mining & Smelting Co Glass slurry

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JP5373250B2 (en) * 2006-02-07 2013-12-18 日本化学工業株式会社 Method for producing semiconductor wafer polishing composition
JP5304993B2 (en) * 2008-08-04 2013-10-02 Jsr株式会社 Chemical mechanical polishing aqueous dispersion for use in circuit board production, circuit board production method, circuit board, and multilayer circuit board
JPWO2016194614A1 (en) * 2015-06-03 2018-03-29 株式会社フジミインコーポレーテッド Polishing composition, polishing method, and production method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404598B (en) * 2008-09-03 2013-08-11 Mitsui Mining & Smelting Co Glass slurry

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