本發明係關於可做為基片（尤其是由二氧 4 y和氮化矽 所組成之基片）的化學機械磨光之漿液的 η物。更特定 言之，本發明之漿液包括：水性介質、磨蝕顆粒、界面 活性劑以及與二氧化矽和氮化矽錯合的化合物。 相關技爇甜ΒΗ 在積體電路技術中，各種活性和鈍性單元—般都必須 與積體電路結構内的其它單元絕緣。這常常藉由深或淺 溝槽絕緣技術來達成。這些技街典型地係使用氮化矽（矽 石）做為介電物質及使用氮化矽做為阻斷層’同時每—個 電路層皆必須要化學機械磨光（平坦化作用）。為了達成有 效的磨光作用和適當的平坦化作用，磨光漿液大抵係有 效的並且應能提供含有相對於氮化矽的二氧化矽移除速 率之高選擇性。 經濟部中央梯準局貝工消費合作社印装 {請先閩讀背面之注項再填寫本頁) 訂 在夕爾維斯特瑞（Silvestri)等人的美國專利4526631中， 以氫氧化鉀調整至pH值為12的6重量％膠態二氧化矽漿液 提供了 10二氧化矽對1氮化矽的磨光比率。拜爾（Beyer)等 人的美國專利4671851說明二氧化矽和氮化矽之間的磨光 比率較佳應在4比1的低限和40比i的高限之間。拜爾 (Beyer )描述使用帶有少量之碳酸鈉和二氯異腈尿酸之鈉 鹽的在水中之膠態二氧化矽而得到6 2比1的比率。 -4- 本紙張尺度適用中國國家標举（CNS ) A4規格（210X 297公釐） 經濟部中央橾準局員工消費合作社印装 4 6043 1 A7 _______B7 五、發明説明（2 ) 近來有更多的專利說明書（例如墨瑞斯（Murase)的美國 專利5502007 )亦描述使用勝態二氧化碎衆液做為磨光劑而 得到10 —氧化矽比丨氮化矽移除速率的選擇性。高德瑞 (K〇dera)等人的美國專利54459%既使用二氧化矽又使用 二氧化鈽做為漿液中的磨蝕顆粒，但是他們亦得到在2比 3之範圍内的二氧化矽對氮化矽移除速率的選擇性。 發明楠盎 本發明係㈣一種#含有二氧化碎&1化碎之錯合物 磨光用的組合物’其包含：水性介質、磨蝕顆粒、界面 活性劑以及與二氧化矽和氮化矽錯合的化合物在錯合 化〇物之中，錯合劑具有二或多個各自擁有一個可解離 質子的官能基，此官能基可為相同或不同的。 本發明之另一範疇係將含有二氧化矽及氮化矽之錯合 物磨光的方法，其包含：將漿液應用到在磨光墊和含有 二氧化矽及氮化矽之錯合物之間的磨光界面上此漿液 ^ ^水f生；I質、磨钮顆粒、界面活性劑以及與二氧化 夕和氮化碎夂合的化合物，在錯合化合物之中，錯合劍具有 二或多個各自擁有一個可解離質子的官能基，此官能基可 為相同或不同的* 1體實施例之說明 當界面活性劑係用於與錯合劑連接時並且當在磨光漿 液的pH值下，漿液中錯合劑的濃度足以阻礙氮化矽之移 -5- 本紙張纽適用中國mmTcm) —----^-----1------ίτ------*t (請先閲讀背面之注意事項再填寫本頁) 460431 A7 B7 五、發明説明（3 ) "~ ~~ 除但不會大到影響二氧化矽之移除時’曾發現將與二氧 化矽和氮化矽錯合的化合物加至磨光漿液中可得到非常 高的二氧化矽移除速率對氮化矽移除速率的選擇性，該 磨光漿液係用於含有二氧化矽及氮化矽之錯合物的化學 機械磨光中。 經濟部中央標準局貝工消费合作社印製 (請先《讀背面之注意事項再填寫本頁) 做用如同二氧化矽及氮化矽之錯合劑或螯合劑的化合 物詳細地描述在美國專利5391258和美國專利54766〇6中， 其皆併於本文供參考.這些化合物必須有至少二個酸基 存在於結構中，此酸基能影響對二氧化矽和氮化矽表面 的錯合作用。酸類被定義為那些具有一個可解離質子的 &能基。其包括，但不限於’叛酸根、經基、和鱗基。 幾酸根和羥基較佳地係以各種不同之有效種類存在的那 些。特別有效的係在阿伐（alpha )位置上有二或多個帶有 經基之羧酸根的結構，例如’直鏈一元和二元羧酸類和 鹽類，其包括，例如，蘋果酸和蘋果酸鹽類、酒石酸和 酒石酸鹽類以及葡萄糖酸和葡萄糖酸鹽類。同樣有效的 係在相對於叛基的阿伐（alpha)位置上帶有第二或第三幾 基的三元和多元幾酸類和鹽類，例如，檸檬酸和檸檬酸 鹽類。亦同樣有效的係含有一個苯環的化合物，例如鄰 二-和多基苯甲酸類和酸式鹽煩、酞酸和酸式鹽類、鄰苯 二酚、焦五倍子酸、五倍子酸和五倍子酸鹽類以及丹寧 酸和丹寧酸鹽類。在後文的實例中，使用一種酞酸的鹽 -6- 本紙張適用中國國家標準（CNS>A4規格（210X297公釐） 經濟部中央標準局員工消费合作社印策 460431 A7 —_______B7_ 五、發明説明（4 ) 做為錯合劑並且，因此，此種鹽類係本發明之較佳錯合 劑。S太酸氫鉀，"KHP" ’係後文所述之實驗中所使用的酞 酸鹽。 在本發明t用於與錯合劑連接的界面活性劑並未在安 定的微細分散體漿液中表現界面活性劑之通常的功能。 如在後文之實例中所示，界面活性劑和錯合劑共同影響 從錯合物表面移除氮化矽的速率。咸相信不論其是為陰 離子、陽離子、#離子或偶極離子等界面活性劑類’在 本發明之组合物中任何界面活性劑皆有可能是有效的。 特別有用的將是帶有磷酸鹽端基的碳氟化合物類或碳氫 化合物類。於後文之實例中，數個不同的界面活性劑皆 顯示疋為有效的。由杜邦公司（Dup〇nt c〇mpany)所製之 ZFSP"，祖林™ Fsp (z〇nyltm Fsp)氟界面活性劑顯示是為 一種可加入本發明之漿液中的特別有效之界面活性劑。 其係在一個末端帶有磷酸鹽基而在另一個末端帶有氟化 物的長直鏈碳氫化合物。The present invention relates to a chemical mechanical polishing slurry η that can be used as a substrate (especially a substrate composed of dioxy 4 y and silicon nitride). More specifically, the slurry of the present invention includes: an aqueous medium, abrasive particles, a surfactant, and a compound compounded with silicon dioxide and silicon nitride. Related technology: sweet BΗ In integrated circuit technology, all kinds of active and passive cells must be insulated from other units in the integrated circuit structure. This is often achieved by deep or shallow trench insulation technology. These technologies typically use silicon nitride (silicon) as a dielectric substance and silicon nitride as a blocking layer. At the same time, each circuit layer must be chemically mechanically polished (planarized). In order to achieve effective polishing and proper planarization, the polishing slurry should be effective and should provide a high selectivity for the removal rate of silicon dioxide with respect to silicon nitride. Printed by the Shell Consumer Cooperative of the Central Government of the Ministry of Economic Affairs {Please read the note on the back before filling this page) Ordered in Silvestri et al., US Patent 4526631, adjusted to potassium hydroxide to A 6% by weight colloidal silica slurry having a pH of 12 provides a polishing ratio of 10 silicon dioxide to 1 silicon nitride. U.S. Patent No. 4,678,851 to Beyer et al. States that the polishing ratio between silicon dioxide and silicon nitride should preferably be between the lower limit of 4 to 1 and the upper limit of 40 to i. Beyer describes the use of colloidal silica in water with a small amount of sodium carbonate and sodium salt of dichloroisonitrile uric acid to obtain a ratio of 62 to 1. -4- This paper size applies to the Chinese National Standards (CNS) A4 specification (210X 297 mm) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 4 6043 1 A7 _______B7 V. Description of the invention (2) Patent specifications (for example, US Patent No. 5502007 by Murase) also describe the selectivity of 10-silicon oxide ratio and silicon nitride removal rate using the vicissitude dioxide solution as a polishing agent. Kodera et al. U.S. Patent 54459% used both silicon dioxide and hafnium dioxide as abrasive particles in the slurry, but they also obtained silicon dioxide versus silicon nitride in a range of 2 to 3. Selectivity of removal rate. Invention of the present invention The present invention is a "composite for polishing with a complex containing pulverized dioxide & pulverized pulverized", which includes: an aqueous medium, abrasive particles, a surfactant, and silicon dioxide and silicon nitride Among the complex compounds, the complex compound has two or more functional groups each having a dissociable proton, and the functional groups may be the same or different. Another category of the present invention is a method for polishing a complex containing silicon dioxide and silicon nitride, comprising: applying a slurry to a polishing pad and a complex containing silicon dioxide and silicon nitride The slurry at the polished interface between the two surfaces is ^^ water; the first substance, the button particles, the surfactant, and the compound compounded with the oxide and the nitride, among the compound compounds, the compound sword has two Or more functional groups each having a dissociable proton, this functional group may be the same or different * Description of the 1-body example When the surfactant is used to connect with the complexing agent and when the pH of the polishing slurry The concentration of the complexing agent in the slurry is sufficient to hinder the movement of silicon nitride. -5- This paper is suitable for China mmTcm) —---- ^ ----- 1 ------ ίτ ------ * t (Please read the precautions on the back before filling out this page) 460431 A7 B7 V. Description of the invention (3) " ~~~ Except but not too big to affect the removal of silicon dioxide, 'it was found that The compound of silicon oxide and silicon nitride is added to the polishing slurry to obtain a very high silicon dioxide removal rate. Of the polishing slurry for chemical mechanical polishing system comprising complexes of silicon dioxide and silicon nitride in. Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the “Notes on the back side before filling out this page”). Compounds used as complexing agents or chelating agents for silicon dioxide and silicon nitride are described in detail in US Patent No. 5,391,258. And U.S. Patent No. 5,476,706, which are incorporated herein by reference. These compounds must have at least two acid groups present in the structure, and this acid group can affect the interaction of silicon dioxide and silicon nitride surfaces. Acids are defined as those & energy groups that have a dissociable proton. These include, but are not limited to, ' acid, meridian, and scaly. Chitosan and hydroxy are preferably those which exist in various effective species. Particularly effective are structures having two or more carboxylate groups with a radical at the alpha position, such as' linear mono- and dicarboxylic acids and salts, including, for example, malic acid and apple Acid salts, tartaric acid and tartaric acid salts, and gluconic acid and gluconate salts. Equally effective are ternary and polybasic acids and salts with a secondary or tertiary group in the alpha position relative to the tether, for example, citric acid and citrate. Also effective are compounds containing a benzene ring, such as o- and poly-benzoic acids and acid salts, phthalic acid and acid salts, catechol, pyrogallic acid, gallic acid and gallic acid Salts and tannins and tannins. In the following example, a salt of phthalic acid is used. 6- This paper applies the Chinese National Standard (CNS > A4 size (210X297 mm). The Central Consumers Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives Co., Ltd., Printing Policy 460431 A7 —_______ B7_ (4) As a complexing agent, and therefore, this kind of salt is a preferred complexing agent of the present invention. S potassium hydrogen phosphate, " KHP " is a phthalate salt used in experiments described later. The surfactant used in the present invention for linking with the complexing agent does not exhibit the usual function of the surfactant in the stable fine dispersion slurry. As shown in the examples below, the surfactant and the complexing agent are used together Affects the rate at which silicon nitride is removed from the complex surface. It is believed that regardless of whether it is an anionic, cationic, #ion, or dipolar surfactant, any surfactant is possible in the composition of the present invention. Is effective. Particularly useful would be fluorocarbons or hydrocarbons with phosphate end groups. In the examples below, several different surfactants have been shown to be effective. ZFSP ", Zulin ™ Fsp (zonyltm Fsp) fluorine surfactant made by Dupont Company is shown to be a particularly effective surfactant that can be added to the slurry of the present invention. A long straight chain hydrocarbon with a phosphate group at one end and a fluoride at the other end.
在這些實例中’使用二氧化鈽做為漿液中的磨蝕顆 粒’因為其在所有的pH條件下皆係化學機械磨光作用的 有效磨光磨蚀劑並且其對凝膠化作用係穩定的。任何其 它他磨光磨蝕劑亦可使用，例如，氧化鋁、氧化鲒、二 氧化碎、一乳化欽和碳酸銷D 任何驗或胺化合物皆可用來調整氮化矽之漿液的pH值 I--------Λ------IT------t (請先閲讀背面之注意事項再填寫本頁) 本紙乐尺度適用中國國家樣準（CNS ) A4規格（210>：297公复） 46043 1 A7 ____B7 五、發明説明（5 ) 以使pH值範圍在可獲得最高的二氧化矽移除對氮化矽移除 之選擇性之内。在後文之實例中使用氫氧化鉀調整漿液组 合物之pH值。氫氧化針、氫氧化錄和所有類型的水可溶之 胺化合物皆可用於調整化學機械磨光漿液的pH值。 · 實例1 表1所示係在擇定之pH值下以含有各種不同量之錯合劑 的聚液磨光·一氧化砂和氣化妙晶片的結果。這些實驗仲 在使用1C 1000/舒巴（Suba) IV磨光墊堆的斯特司作6DS SP (Strasbaugh 6DS SP)平坦化器上施行’施行條件如下：7 psi向下壓力、1.5 psi反壓力、每分鐘30轉托架速度和每分 鐘32轉桌面速度以及125毫升/分鐘的漿液流速。使用6英 吋的晶片並且在每一個晶片磨光後重新調整墊子。在這 一系列的實驗中，所有的漿液皆包含百分之0.45膠態二氧 化鈽和百分之0.2 ZFSP界面活性劑並且使用氫氧化鉀調整 聚液的pH值》 A__1 I--------2------訂------'·! (請先閱讀背面之注意^項再填寫本育) P* KH %In these examples, the use of hafnium dioxide as the abrasive particles in the slurry is because it is an effective polishing abrasive for chemical mechanical polishing under all pH conditions and it is stable to gelation. Any other polishing abrasive can also be used, for example, alumina, hafnium oxide, pulverized dioxide, an emulsifier and carbonate. Any test or amine compound can be used to adjust the pH of the silicon nitride slurry I-- ------ Λ ------ IT ------ t (Please read the notes on the back before filling this page) The paper scale is applicable to China National Sample Standard (CNS) A4 (210 > : 297 public reply) 46043 1 A7 ____B7 5. Description of the invention (5) In order to make the pH range within the highest selectivity of silicon dioxide removal to silicon nitride removal. In the following examples, potassium hydroxide is used to adjust the pH of the slurry composition. Hydroxide needles, hydroxides, and all types of water-soluble amine compounds can be used to adjust the pH of chemical mechanical polishing slurry. · Example 1 Table 1 shows the results of polishing with a polymer solution containing various amounts of complexing agents at a selected pH, sand oxide, and vaporizing wafers. These experiments were performed on a Stratix 6DS SP (Strasbaugh 6DS SP) flattener using a 1C 1000 / Suba IV polishing pad stack. The operating conditions were as follows: 7 psi down pressure, 1.5 psi back pressure 30 rpm carriage speed per minute and 32 rpm table speed per minute and 125 ml / min slurry flow rate. Use 6-inch wafers and readjust the pad after each wafer has been polished. In this series of experiments, all the slurries contained 0.45 percent colloidal hafnium dioxide and 0.2 percent ZFSP surfactant and used potassium hydroxide to adjust the pH of the polymer solution. "A__1 I ----- --- 2 ------ Order ------ '·! (Please read the note on the back ^ before filling in this education) P * KH%
EH #- 選 率 -5上 ii 除 移 矽 化 氮 率 速 除 移 碳 化 經濟部中央橾準局貝工消背合作社印製 3 3 0 13 1 4 4 7 7 ο ο 11 14 25 3 9 0 5 7 6 1 0 8 9 4 0 0 13 2 3 3 13 3 9 5 8 1 6 0 6 10 9 4 0 9 2 9 9 本紙張尺度適用中國國家標準（CNS ) A4洗格（210X297公釐） 46043 1 A7 ------B7 _ 五，發明説明（6 ) *酞酸氳卸 ί請先聞讀背面之注意事項再填寫本頁} 這些結果明顯地示出藉由在某個pH值水準下使用含有 錯合劑和界面活性劑的漿液可得較以往之報告高出許多 的二氧化矽對氮化矽移除速率的選擇性，在該pH值水準 下這些添加劑能有效地阻斷氮化矽的移除速率但該pH值 水準不會大到影響二氧化矽的移除速率。如前所示，藉 由本發明之磨光方法可得2〇〇及大於2〇〇的選擇性。 實例2 下文的實驗顯示，在本發明之漿液中使用界面活性劑 的必然性。它們係在和實例1中所述之相同的條件下，於 斯特司伯 6DS SP 平坦化器（Strasbaugh eDS SP Planarizer)上 進行。漿液係類似於表1中的樣本4所使用的那種，其中 漿液係含有百分之i KHP、百分之〇 45膠態二氧化鈽並使 用氫氧化鉀調整pH值至7。界面活性劑，ZFSP，的百分比 係與樣本4相同的百分之0·2抑或係百分之〇 〇 ^以每分鐘 多少埃（Angstroms)表示的氮化矽移除速率示在下文的表2 中： 表__2 經濟部肀夾標準局員工消费合作社印製 %ZFSP 氮化矽移除速率 0 793 0 768 0 736 0.2 10 0.2 8 -9- 本紙張尺度通用中囷國家標率（CNS ) Α4规格（210Χ297公楚） 4 604 3 Ί Α7 ----------Β7 五、發明説明（7 ) 從這些數據中可看出，由於得到了此種異常的選擇性， 所以對氮化矽移除速率的阻斷而言，界面活性劑係重要 (請先閲讀背面之注意事項再填寫本頁) 的。 實例3 在下面的實驗中，漿液中的磨蝕劑係在使用前曾碾磨 過的商用乳白二氧化鈽。晶片之磨光作用係在和實例i相 同的條件下達成。結果給予在下面的表3中： A.3 %磨蚀劍 %KHP %ZFSP pH值 二氧化矽 氮化矽 選擇性 移除速率 移除进率 8 2 〇 0 7 5804 3504 2 9 2 1 0.2 7 2642 22 120 10 3.5 1 0.2 6.5 3195 13 246 11 5 1 0.2 6.5 3705 33 112 12 3.5 2 0.4 7 — 2123 10 212 13 5 2 0.4 7.5 3609 1105 3 這結果示出 :當使用調整至想 要之pH值範圍的漿液 經濟部中央橾準局貝工消费合作社印装 時’錯合劑和界面活性劑有效地阻斷氮化矽的移除速 率。在6‘5和7pH值下，經由所給予之超過100(樣本9_ 12) 的二氧化矽移除對氮化矽移除的選擇性可知氮化硬之移 除速率被大大地阻斷。但是，在7.5的pH值（_本13 )下， 氧化矽的移除速率不再降低並且選擇性非常的差。 實例4 在這些實驗中，發現數個界面活性劑可在6.5的pH值下 -10- 本紙張尺度適用中國國家橾準（CNS ) A4规格（210 X 297公釐） 經濟部中央標準局員工消费合作社印裝 460431 A7 B7 五、發明説明（8 ) 有效地使氮化矽的移除速率降低。所使用之界面活性劑 係由3M公司供應之FC-93，氟羅瑞德™ FC-93(nuorad™ FC-93)，一種陰離子氟化物界面活性劑、商業供應之聚磺酸 乙晞醋的納鹽以及由杜邦公司（DuPont Company)所供應的 ” ZFSN ”，祖林TM FSN (ZONYL™ FSN )，一種非離子界面活 性劑。本實例中的漿液皆含有百分之1.5的KHP (酞酸氫鉀） 和百分之0.45的做為磨蝕劑之商用乳白二氧化鈽。晶片之 磨光作用係在和實例1相同之條件下達成。結果給予在後 文之表4中。 £_1 樣本 界面活性劑%界面活'陡劑二氧化矽 氮化矽 選擇性 移除速率 移除速率 14 FC-93 0.2 2975 464 6 15 PVS 0.3 3406 35 98 16 ZFSN 0.3 2678 39 68 這些結果示出數個界面活性劑皆有效地使漿液中的氮 化矽之移除速率降低□如果pH值和漿液組合物係最適宜 的，那麽一個既定的界面活性劑可更加地有效。 實例5 在本實例中所使用磨餘劑係由羅德爾公司（Rodel，Inc.) 所供應之WS 2000。WS 2000係一種含有二氧化鈽和二氧化 矽二者的磨蝕劑。本實驗所使用之漿液含有百分之3 , 5磨 蝕劑、百分之1.5 KHP (酞酸氫鉀）以及百分之0.2 ZFSP(祖 -11 - 本紙張尺度適用中國國家標準（CNS ) A4現格（210 X 297公釐} I--------/------1T------t (請先閱讀背面之注意事項再填寫本頁) 460431 A7 B7 五、發明説明（ 林EH #-Election rate -5 ii Removal rate of silicide and nitrogen removal rate Quick removal and removal by the Carbonaceous Industry Bureau of the Ministry of Carbonation and Economics Printed by Shellfish Consumer Cooperatives 3 3 0 13 1 4 4 7 7 ο ο 11 14 25 3 9 0 5 7 6 1 0 8 9 4 0 0 13 2 3 3 13 3 9 5 8 1 6 0 6 10 9 4 0 9 2 9 9 This paper size is applicable to the Chinese National Standard (CNS) A4 wash case (210X297 mm) 46043 1 A7 ------ B7 _ V. Description of the invention (6) * Please read the precautions on the back before filling in this page} These results clearly show that by using at a certain pH level The slurry containing complexing agent and surfactant can obtain much higher selectivity of silicon dioxide to silicon nitride removal rate than previous reports. At this pH level, these additives can effectively block the silicon nitride. Removal rate but this pH level will not be large enough to affect the removal rate of silicon dioxide. As shown previously, selectivity of 2000 and greater than 200 can be obtained by the polishing method of the present invention. Example 2 The following experiment shows the necessity of using a surfactant in the slurry of the present invention. They were performed under the same conditions as described in Example 1 on a Strasbaugh eDS SP Planarizer. The slurry system was similar to that used in Sample 4 in Table 1, where the slurry system contained iKHP percent, 455% colloidal osmium dioxide, and the pH was adjusted to 7 with potassium hydroxide. The percentage of surfactant, ZFSP, is the same as that of Sample 4 or 0.2%. The silicon nitride removal rate in Angstroms per minute is shown in Table 2 below. Middle: Table__2% ZFSP Silicon Nitride Removal Rate Printed by Employee Consumer Cooperatives of the Bureau of Standards and Standards of the Ministry of Economic Affairs 0 793 0 768 0 736 0.2 10 0.2 8 -9 Specifications (210 × 297) 4 604 3 Ί Α7 ---------- B7 V. Description of the invention (7) From these data, it can be seen that due to this exceptional selectivity, the nitrogen For the blocking of silicon removal rate, the surfactant is important (please read the precautions on the back before filling this page). Example 3 In the following experiment, the abrasive in the slurry was a commercial opalescent osmium dioxide which had been milled before use. The wafer polishing effect was achieved under the same conditions as in Example i. The results are given in Table 3 below: A. 3% abrasion sword% KHP% ZFSP pH value Silicon dioxide selective removal rate Silicon nitride removal rate 8 2 〇 0 7 5804 3504 2 9 2 1 0.2 7 2642 22 120 10 3.5 1 0.2 6.5 3195 13 246 11 5 1 0.2 6.5 3705 33 112 12 3.5 2 0.4 7 — 2123 10 212 13 5 2 0.4 7.5 3609 1105 3 This result shows that when used to adjust to the desired pH range The 'complex and surfactant' in the printing of the Central Laboratories and Consumers Cooperative of the Ministry of Slurry Economics effectively blocked the removal rate of silicon nitride. At 6'5 and 7 pH values, the selectivity of silicon nitride removal through the given silicon dioxide removal of more than 100 (samples 9-12) shows that the rate of hard nitride removal is greatly blocked. However, at a pH of 7.5 (_13), the removal rate of silicon oxide no longer decreases and the selectivity is very poor. Example 4 In these experiments, it was found that several surfactants can be used at a pH of 6.5-10- This paper size is applicable to China National Standards (CNS) A4 specifications (210 X 297 mm) Employees of the Central Standards Bureau of the Ministry of Economic Affairs Cooperative print 460431 A7 B7 V. Description of the invention (8) Effectively reduce the removal rate of silicon nitride. The surfactant used is FC-93 supplied by 3M Company, Fluororide ™ FC-93 (nuorad ™ FC-93), an anionic fluoride surfactant, a commercially available sodium salt of acetic acid polysulfonate And "ZFSN" supplied by DuPont Company, Zulin TM FSN (ZONYL ™ FSN), a non-ionic surfactant. The slurries in this example all contained 1.5% KHP (potassium hydrogen phthalate) and 0.45% commercial osmium hafnium dioxide as an abrasive. The wafer polishing effect was achieved under the same conditions as in Example 1. The results are given in Table 4 below. £ _1 Sample surfactant% Interfacial activity Steeper Silicon dioxide Silicon nitride Selective removal rate Removal rate 14 FC-93 0.2 2975 464 6 15 PVS 0.3 3406 35 98 16 ZFSN 0.3 2678 39 68 These results show Several surfactants are effective in reducing the removal rate of silicon nitride in the slurry. If the pH and slurry composition are the most suitable, then a given surfactant can be more effective. Example 5 The abrasive used in this example was WS 2000 supplied by Rodel, Inc. WS 2000 is an abrasive containing both hafnium dioxide and silicon dioxide. The slurry used in this experiment contains 3,5% abrasives, 1.5% KHP (potassium hydrogen phthalate), and 0.2% ZFSP (Zu-11-this paper size applies to Chinese National Standard (CNS) A4) (210 X 297 mm) I -------- / ------ 1T ------ t (Please read the precautions on the back before filling this page) 460431 A7 B7 V. Description of the invention
TM FSP (ZONYL™ FSP)。pH值大為6.5。在和實例1相同 之條件下的晶片磨光作用結果示在後文之表5 : £_5_ 樣本 二氧化矽移除速率氮化矽移除速率 選擇性 17 2209 9 244 上面的實例示出許多本發明之具體實施例但並不意圖於 任何程度上限制本發明□本發明之範疇僅以後文之申請專 利範圍來定義： I--------/------訂------東 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裳 -12 - 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐）TM FSP (ZONYL ™ FSP). The pH is large at 6.5. The results of wafer polishing under the same conditions as in Example 1 are shown in Table 5 below: £ _5_ Sample silicon dioxide removal rate Silicon nitride removal rate selectivity 17 2209 9 244 The specific embodiments of the invention are not intended to limit the invention to any extent. The scope of the invention is only defined by the scope of the following patent applications: I -------- / ------ subscription-- ---- East (Please read the notes on the back before filling this page) Yin Chang-12, an employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs-This paper size applies to the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm)