TWI298894B - Substrate processing apparatus and substrate processing method - Google Patents

Description

1298894 发明Invention Description: [Technical Field] The present invention relates to a substrate processing apparatus and a substrate processing method, and is suitable for an etching apparatus that etches a film that is opened at a peripheral portion of a substrate. The present invention relates to a substrate processing apparatus and a substrate processing method which are applied to a cleaning apparatus for cleaning a substrate after an etching process. [Prior Art] In recent years, the use of copper (Cu) having a low resistivity and high electron mobility resistance to a wiring material for forming a circuit on a substrate such as a semiconductor wafer has a tendency to be two generations of aluminum or aluminum alloy. Significant. Such copper wiring is generally formed by embedding steel into the interior of a small recess provided on the surface of the substrate. In view of this method, there are methods such as CVD (chemical vapor deposition) and sputtering plating, but any method is to form a copper film on substantially the entire surface of the substrate, and by chemical mechanical means. Polishing (CMp) removes unnecessary copper. Since copper is easily diffused in the hafnium oxide film in the semiconductor process, unnecessary copper formed outside the circuit formation portion must be completely removed on the substrate. In particular, copper which is formed into a film or adhered to the peripheral edge portion of the substrate (including the edge and the inclined surface) may adhere to the arm portion of the transfer robot for transporting the substrate or the card holder of the storage base $, etc., causing the copper to diffuse and contaminate other processes. The cause of cross-contamination. Therefore, it is necessary to completely remove the film formed or adhered to the peripheral portion of the substrate in the copper film forming step or the CMp step. Therefore, conventionally, a treatment liquid (etching liquid) is supplied to a substrate, and an etching treatment is performed to remove a copper film which is formed into a film or adhered to the peripheral portion of the substrate. This etching (correction) 315214 6 1298894 is performed by rotating the substrate in a chamber and supplying the treatment liquid to the peripheral portion of the rotating substrate. Further, the treatment liquid supplied to the substrate reacts with the copper film on the substrate, and after the copper film is removed, it is recovered and reused for the etching treatment. However, since the conventional etching treatment method supplies the treatment liquid to the substrate at a certain distance from the substrate, the treatment liquid contacting the substrate splashes, causing contamination of the reaction chamber ambient gas requiring high cleanliness. Further, according to the conventional method, although the treatment liquid is continuously supplied to the substrate, the treatment liquid on the substrate is often replaced, but the amount of the treatment liquid supplied for etching is only a little. Therefore, the amount of the treatment liquid to be supplied to the substrate is much higher than that required for the actual etching, and it is expected that the amount of the treatment liquid can be reduced. In the conventional cleaning treatment after the etching, a large amount of the cleaning liquid is supplied to the entire substrate, and the treatment liquid (etching liquid) remaining on the peripheral portion of the substrate is washed with the cleaning liquid. Therefore, there is a problem that the portion to be washed is limited to the peripheral portion of the substrate, but the cleaning liquid is supplied to the portion where no washing is required. Further, when a large amount of the cleaning liquid is supplied to the substrate, the cleaning liquid containing the residual treatment liquid splashes on the surface of the substrate or in the reaction chamber, and the portion other than the etching target region on the surface of the substrate is contaminated. Further, since the cleaning liquid adheres to the wall surface of the reaction chamber or the like, there is a problem that the ambient gas in the reaction chamber is contaminated. SUMMARY OF THE INVENTION The substrate processing apparatus and the substrate processing method of the present invention are developed in view of the conventional problems, and a first object thereof is to provide a process for cleaning the reaction chamber when the processing liquid is not splashed and supplied to the substrate. Ambient gas, 7 (Revised) 315214 1298894 can also reduce the amount of treatment liquid used. A second object of the substrate processing apparatus and the substrate processing method of the present invention is to provide a required region in which the processing liquid can be prevented from being splashed, and only to supply the substrate to the substrate, and to maintain the reaction chamber (4) to clean the ambient gas, and to reduce the amount of the processing liquid used. In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention is characterized in that: the substrate holding portion that maintains the substrate substantially horizontally rotated; and the processing liquid is supplied to the substrate in a manner that the substrate is stationary. A processing liquid supply unit that rotates the peripheral portion of the substrate. According to this configuration, the present invention can supply the treatment liquid to the substrate without causing the treatment liquid to splash. , , = fruit, can maintain the reaction of the clean environment gas inside, at the same time, can improve the reaction efficiency of the treatment liquid and the film, and reduce the amount of treatment liquid. A preferred aspect of the invention is characterized in that the treatment liquid removing portion is provided with a treatable liquid. The feature that is not poorly preferred is formed by sucking the treatment liquid on the substrate. The amount of the treatment liquid on the substrate and the range of existence can be maintained by the above treatment. Further, since the processing liquid which can be discharged from the large portion of the substrate from which the processing liquid is removed by the processing liquid removing portion is only a little bit, it is possible to prevent the reaction chamber from being contaminated. The present invention is characterized in that a gas-liquid separation unit that separates the aspirated treatment liquid from the gas is characterized in that a treatment liquid for separating the separation portion is provided to be regenerated. $1,+.老乂,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The sample is characterized by the preferred liquid supply portion of the present invention. The preferred embodiment liquid removal portion of the present invention is provided with a plurality of the foregoing processes provided with a plurality of the foregoing processes.

In this way, in the above example, the upper processing liquid supply unit is disposed on the peripheral edge portion of the substrate, and the A1 liquid supply unit is disposed on the outer side in the radial direction of the substrate, so that the outer processing can be performed. The peripheral portion of the substrate (side portion) can correctly handle the area to be treated. = Characteristic of the preferred aspect of the invention: S: A purging mechanism for supplying an inert gas to the surface of the base plate is provided. A substrate processing method according to another aspect of the present invention is characterized in that the substrate is kept substantially horizontally rotated, and the treatment liquid is supplied to the peripheral portion of the rotating substrate in such a manner that the substrate is stationary, so as to absorb the treatment on the substrate. A substrate processing apparatus according to another aspect of the present invention includes: a substrate holding portion that maintains a substantially horizontal rotation of the substrate; and a cleaning liquid discharge port that forms an elevation angle of 45 or less with the substrate surface, and is 〇lm/s or more The speed is supplied from the center of the substrate toward the peripheral portion to the cleaning liquid supply portion on the surface of the substrate. According to the present invention thus constituted, the cleaning liquid can be prevented from splashing and is only required for the desired area on the substrate. As a result, the clean environment 9 (amendment page) 315214 gas in the reaction chamber can be maintained, and at the same time, only the cleaning liquid can be supplied to the required portion to reduce the amount of use thereof. The preferred aspect of the present invention is characterized in that the above-mentioned cleaning liquid The supply portion is disposed near the surface of the substrate. Thereby, the cleaning liquid can be prevented from being extinguished, and the portion to be washed of the substrate can be efficiently washed. According to a preferred aspect of the present invention, the cleaning liquid receiving portion is disposed on the same plane as the surface of the substrate and opens to the cleaning liquid supply region on the substrate, and the cleaning liquid is recovered from the receiving portion. Thereby, the washing water required for the necessary portion of the washed substrate can be returned by the receiving portion. Therefore, the problem that the cleaning liquid is splashed in the reaction chamber can be prevented, and the cleaning liquid can be recycled and recycled. According to another aspect of the present invention, in the substrate processing method, the cleaning liquid is supplied from the cleaning liquid outlet opening at an elevation angle below the surface of the substrate, and the substrate h is supplied to the peripheral portion to wash the surface of the substrate. Or at least one of the inside. The substrate processing method of the present invention is to supply the treatment liquid to the cleaning liquid discharge port of the opening of the substrate at the edge portion of the substrate (four) after the edge of the processing substrate (4). The cleaning liquid is supplied from the peripheral portion of the substrate to the region m containing the peripheral portion of the substrate, and the residual treatment liquid in the treated region of the treatment liquid is removed. According to the present invention, only the cleaning liquid is supplied to the required portion to avoid it, and the residual treatment liquid is prevented from adhering to the substrate other than the object on the substrate: > Further, by preventing contamination in the reaction chamber, it is possible to prevent the substrate after the treatment or the treatment from being contaminated, and it is possible to prevent the subsequent processing substrate from being contaminated. (Amendment page) 315214 10 1298894 points: supply from the above-mentioned cleaning liquid discharge D' to the peripheral portion of the substrate. The present invention is characterized in that it is disposed on the surface of the substrate in a direction close to the surface of the substrate. A washing liquid receiving portion of a signature surface is characterized in that the cleaning liquid is recovered from the flat surface and toward the cleaning liquid supply region on the substrate. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. Incidentally, the same or equivalent members are denoted by the same reference numerals or the like, and the repeated description is omitted. The embodiments described below are described based on the purpose of explaining the present invention, but the present invention is not limited to the following embodiments. Fig. 1 is a cross-sectional view showing a substrate processing apparatus applied to an etching apparatus according to an i-th embodiment of the present invention. The reaction chamber i accommodating the wafer w includes a cylindrical reaction chamber body 1a and a reaction chamber cover 2 covering the upper end of the reaction chamber body 1a. The reaction chamber body i a is vertically disposed in the vertical direction, and the lower side is closed in the bottom portion lb. The reaction chamber cover 2 is formed in a bowl shape and covers the upper end portion of the reaction chamber body 1a. The upper end portion of the reaction chamber body 丨a is closely adhered to the outer peripheral portion of the reaction chamber cover 2 so as to be able to seal the inside of the reaction chamber 1 and not communicate with the outside air. The bottom lb is slightly inclined with respect to the horizontal, and the lowest portion of the inclination is located at the joint portion of the bottom portion 1b and the reaction chamber body 1a, and the discharge chamber 3 which doubles as the exhaust and discharge is formed in the reaction chamber body 1a. An opening 2a is formed in a central portion of the reaction chamber cover 2, and an upper shaft 6 is provided through the opening 2a in a vertical direction. The upper shaft 6 has a circular plate 11 (revision) 315214 1298894-like flange portion 6a at its upper end. The reaction chamber cover shrinks the sac-shaped chest joint 7 and seals the two ports and the 7 flange portion 6a by the waveform (extends the conduit 9. The inert gas is supplied to the center of the upper shaft 6 of the Beton or the inert gas such as argon (Ar). :, connected to the conduit 9, nitrogen (N2) to the wafer W: Table: ... inert gas supply source 12 via the conduit 9 reaction chamber cover 2 disk but the rainbow B - 纴 from the " 猎 hunting joint member (略 ) 纴 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛 牛The relative position is recognized. The flexible switch 7 | 2 /, the upper shaft 6 of the upper cymbal 6 6 is disposed so as to correspond to the relative position of the reaction chamber cover 2 and the upper shaft 6 . The air-tight lower slab-flat upper disc 10 inside the reaction chamber 1 is horizontally attached to the upper shaft 6 center. (4) The disk 10 is disposed below the A-plate (ie, a circular wafer) to be processed. W) The surface between the base of the object and the upper surface of the wafer W: s: rn, s (10) The barrier s is preferably reduced as much as possible, for example, in the range of U·) to 20 mm, the city of #lL bb, Field adjustment The gap S is preferably 0.8 to 10 mm, and: to 4 mm', the inert gas supplied via the conduit 9 is flowed on the crystal/surface. By adjusting the gap s, the wafer W can be protected with a smaller amount of \milk The adjustment of the gap s can be achieved by adjusting the relative position of the upper shaft and the reaction chamber cover 2. Further, the upper shaft 6, the upper disc 1 and the inert gas supply source constitute a purge mechanism. The chamber 1 is provided with a vacuum chuck that can hold the wafer w substantially horizontally while rotating it (the substrate holding portion. The vacuum chuck) forms a through hole Ua that connects the vacuum source (not shown). Ua is in communication with the open σ portion Ub provided on the vacuum I (revision) 315214 】 2 1298894. The wafer w is placed on the surface of the vacuum chuck u and is held by the vacuum chuck to the vacuum chuck 11. Vacuum, two, one, and Ό are useful to rotate the driving source of the vacuum chuck 11 (not shown), true ii "the wafer w adsorbed and held by the member 11 is rotated by the driving source and the straight empty chuck - Here, the rotation speed of the wafer w must be at a low speed, which is not less than 50 (10) in·1, preferably 5 to 20 0 min". / "The person, the tea test 2, and the substrate processing device of the present embodiment, the money engraving portion is provided." FIG. 2A is a view showing the soil counter processing apparatus of the present embodiment. In the oblique view of the first part, the 帛2β is a side view of the remaining part shown in the figure, and the 2C is a top view of the first part shown in the second figure. The vertical etching unit is provided with a chemical solution (treatment liquid) The chemical supply unit to the wafer w: the processing liquid supply unit 15; and the chemical liquid for removing the chemical liquid from the wafer w. P (treatment liquid removal unit) 2〇. The chemical supply unit 15 (four) includes a supply nozzle for supplying the chemical solution to the peripheral edge of the wafer w, a chemical liquid introduction tube 7 connected to the supply nozzle '16, and a chemical solution connected to the chemical introduction tube 17. Storage tank] 8. The supply nozzle 16 has an opening portion "a" at a position close to the peripheral edge portion of the wafer w. The chemical liquid in the chemical solution storage tank 18 is supplied from the opening of the supply nozzle 16 to the peripheral portion of the wafer W via the chemical liquid introduction tube 17. Here, the peripheral portion of the wafer W refers to a region where no circuit is formed on the periphery of the wafer, or a region that is not used as an element even if a circuit is formed. In the present embodiment, a drug for etching a copper beryllium is used. The liquid supply unit I 5 and the chemical solution removal unit 20 of the present embodiment each constitute a treatment liquid supply unit and a treatment liquid removal unit.

(Revised) 3I52M 13 1298894 Here, the chemical liquid supplied from the chemical supply unit 15 contains at least one type of inorganic acid or organic acid, and further contains peroxidic gas (HA) f or ozone as an oxidizing agent. 3) At least a mixture of water. For the inorganic acid system, hydrofluoric acid (HF), hydrochloric acid (HCL), nitric acid (HN〇3), or sulfuric acid (H2S〇4) can be used. For the organic acid system, acetic acid, formic acid or oxalic acid can be used. Further, in the case where the film to be etched is a ruthenium film, the medicinal solution (treatment liquid) supplied from the chemical solution supply portion may, for example, be an acid salt, a sulfite or a bromate. A potent oxidizing agent solution prepared from an oxoacid salt solution, but an organic test such as ammonia, tetramethylammonium chloride or trimethylamine may be used, such as desert, arsenic, and chlorine dioxide. Or a mixed solution of ozone oxidants. In the present embodiment, the flow rate and flow rate of the chemical liquid supplied from the supply nozzle 16 are used. The liquid stream I should be below 100 ml/min, preferably 20 ml/min, and more preferably below 5 m]/min. Further, the opening portion 16a of the nozzle 16 is supplied with a disk 曰m W, and the distance d between the surfaces of the nozzles and the surface of the day 0 is preferably 5 or less, and preferably 1 m or less.曰 So because a small amount of liquid is supplied from the position close to the wafer to the low-speed rotating circle, the liquid phase supplied to the wafer is stationary to the wafer system. Here, the "medicine liquid phase for the 曰σ giving portion 15 to the wafer two wide" means that the liquid from the fixed position is for θθ Ρ 0 the liquid will stop at the place where it contacts the wafer, from the viewpoint of the wafer, In a relatively static skin rotation, it will not...=Γ. That is to say, the liquid medicine supplied to the wafer moves in the direction of the rotation of the crystal flying mountain D, and it is not pulled out of the wafer by centrifugal force. According to the fact that every At A 曰 corpse only knows the evil, since the liquid does not flow out of the wafer, and the cockroach stops on the wafer, the time of contact with the wafer at night/night increases, which can be reduced (Revised) 3] 52] 4 14 1298894 Low liquid usage. Further, it is also possible to move in the radial direction of the circle W as shown in Fig. 3A. The brother is placed into the supply nozzle 〖6 along the standard area. Here, the processing target is configured in such a manner that the processing area (edge cutting width) can be freely adjusted, and is generally expressed as β mm of the circumference of the sun-yang circumference, for example, # /, the outer circumference of the circle (side portion) ) toward the inner side of the heart, ° 2 to 5mm. Also, after the wafer W is processed, or the wafer is removed from the wafer w. By thus configuring the n-out %, the supply nozzle 16 is withdrawn from the chemical supply unit 15 for the loading and unloading of the binary wafer. Removed from wafer w. The liquid medicine of the 2A1Tm is removed by the liquid medicine (4) the suction nozzle 2 1 and the passage 2 > No, the chemical liquid removal unit 20 is provided with the source 23; the outlet tube 22 of 9 = 帛' is connected to the suction nozzle 2 The suction source 23 of the first suction nozzle 23 is disposed at the same position as the suction nozzle of the suction nozzle 21 and the position of the supply nozzle 16 66 (Fig. 2) in the radial direction of the wafer, and the position of the port portion 16a. As shown in Figure 2C, the liquid is supplied for the rotation of W, and the liquid of 0 仏 to the day 0 W is removed with the wafer. The evening and the mouth 21 @吸口' are sucked by the suction nozzle 21 Although it is not in contact with each other, it is possible to use as the suction source 23 as much as possible to increase the suction port of the liquid-liquid type suction nozzle 21 as close as possible to the crystal ball or the ejector. Fig. 4 is a schematic view showing a gas-liquid separation unit of a substrate processing apparatus (etching apparatus) of the present embodiment. As shown in Fig. 4, the gas-liquid separation unit 27 is provided in the chemical liquid discharge pipe 22. The source 23 introduces a mixture of the chemical solution and the gas sucked from the suction nozzle 21 into the gas knife blade portion 27. Only the chemical solution is stored in the gas-liquid separation portion 27. Another 15 (amendment) 315214 1298894 One side, the gas introduced into the gas-liquid separation unit 27 is sucked by the suction source 23.

In order to improve the efficiency of the absorption of the liquid, it is necessary to ensure the airtightness of the suction nozzle 2 to the path of the suction source U. 2. The suction of the chemical solution removing unit 2 can also be controlled by the gas-liquid separation method and the vacuum gauge and the vacuum pressure adjustment valve 'II by adjusting the vacuum pressure'. Fig. 5A is a schematic view showing a gas-liquid separation unit and a regeneration unit of the substrate processing apparatus of the embodiment. Fig. 5B is a schematic view showing another example of the gas-liquid separation unit and the regeneration unit. As shown in the figure, the regeneration unit 32 is connected to the bottom of the gas-liquid separation unit 27. The chemical liquid separated by the gas-liquid separation unit 27 is introduced into the regeneration unit. The chemical liquid introduced into the regeneration unit 32 is filtered by a buffer (not shown), and is supplied to the chemical storage tank 18 of the sputum supply unit 15. The liquid level sensor 28 may be disposed in the gas-liquid separation unit 27 as shown in FIG. 5B to detect the liquid level position of the stored chemical liquid, and may be further after the liquid medicine is removed and removed, or in the liquid liquid. When the liquid level position reaches the predetermined position, the valve opening is opened, and the chemical liquid is sent to the chemical liquid supplied to the wafer w via the chemical liquid removing unit 2, the separation unit 2 7 ', and via the re-community department ^^ * 冉The oysters 32 are recovered and re-supplied from the liquid supply unit to the wafer W. In the present embodiment, ~Y, you can directly suck the single liquid supplied to the wafer w onto the wafer W, so that the chemical liquid is almost undiluted, that is, it is recovered. That is, (4) the method of recovering the liquid medicine flowing out of the wafer from the discharge port of the reaction chamber, the dilution of the liquid medicine, and the contamination are not appropriate. In the present embodiment, it is rare that the chemical liquid regenerated by the regeneration unit 32 is too low, so that the processing ability of the chemical liquid can be utilized. (Revised) 315214 16 !298894 The same applies to the substrate processing apparatus of the present embodiment ((4) is installed. The farmer >>

In Fig. 1, first, the vacuum chuck 丨 is kept rotated. J: Secondary ώ - The peripheral portion of the wafer treated with 圮AV ^ 15 16 ^ ^^1 W. This day-wide "= is supplied as a surname to the surface of the rotating wafer W. The T-rolling temple inert gas is supplied from the conduit 9 to the wafer; the inert gas supplied by the gas 9 will flow white am η and the edge portion flows, so ,...囫W the center of the week^^^ " The flow of stomach gas can prevent the liquid solution if # $月豆和雾流流到 wafer w 士士如门求饮% i 虱^ ^ 0 w central Neighbors. Therefore, the liquid ring can be borrowed:: Prevent the surface of the wafer from deteriorating. It can prevent the oxygen in the atmosphere:: ί The copper film is affected by the reaction] The liquid and mist of the milk and the liquid are::: The supply of :: is set to make the drug oxygen not to be > melon to the center of the wafer,

The liquid at the edge will not fly out of the wafer. Wafer week. The crystal is supplied to the wafer W liquid removal unit in a stationary state: the suction of the liquid/removal/wafer is rotated until the liquid medicine is supplied and removed in the liquid medicine. In other words, the liquid removing unit 20, which is removed by the liquid removing unit 20 after the front portion is present on the wafer, is subjected to rhyme processing during the period in which the second atom is taken. The drug and the liquid are supplied to the chemical supply unit 15 via the gas-liquid separation unit 27 and the regeneration unit 32, and the same is processed and terminated, that is, the two parts 15 are supplied to the wafer w. To the cleaning liquid supply unit of the w round w, the ultrapure water is supplied to =:, and the chemical liquid used for the residual processing is washed (flushed). The second embodiment of the substrate processing apparatus according to the embodiment of the present invention is applied to the second embodiment of the substrate processing apparatus of the present invention (Revised JL) 315214 17 1298894. The structures and operations that are not particularly described are the same as those of the first embodiment. Fig. 6 is a cross-sectional view showing the substrate processing apparatus of the embodiment. Fig. 7 is a perspective view showing the roller head loss and the cooking portion of the substrate processing apparatus of the embodiment. Six openings (not shown) are formed at the bottom portion 1b through which six roller chucks 35a to 35f for holding the wafer W horizontally are erected. The wafer W is rotated at a low speed by synchronous rotation of the six roller chucks 35a to 35f, respectively. Further, the chemical supply unit 15 and the chemical removal unit (etching unit) 2 are disposed between the roller chucks 35a and 35f. Further, the rotational speed of the wafer w rotated by the roller chucks 35a to 35f is the same as that of the first embodiment. Even in the case where the roller chucks 35a to 35f are used as the substrate holding portion, the chemical liquid supply portion 15 and the chemical liquid removing portion 20 can be disposed close to the wafer w as in the present embodiment. Therefore, the chemical liquid can be supplied in a state of being stopped with respect to the rotating wafer w, and the chemical liquid in the wafer w can be further sucked and removed. Next, a third embodiment of the present invention will be described with reference to Fig. 8. The eighth circle shows the chemical solution supply unit applied to the substrate processing apparatus of the etching apparatus of the present embodiment. As shown in Fig. 8, in the present embodiment, the sponge 36 is attached to the tip end of the supply nozzle 16, and the chemical liquid oozing from the sponge 36 is supplied to the peripheral portion of the wafer w. The sponge 36 is disposed so as not to contact the wafer w, and the distance between the sponge % and the wafer w is the same as that of the third embodiment. Further, in addition to sponge, a porous material such as cloth can also be used. ' (Revised) 315214 18 1298894 Next, the participant's skirt qa state is explained: Fig. 9B, the fourth embodiment of the present invention is a f1 star map: the member is not applicable to the substrate of the etching apparatus of the present embodiment In the medical solution supply unit, Fig. 9b shows another example of the wound medicine supply unit and the chemical removal unit included in the engraving apparatus of the present embodiment. If 苐9A maps the household, dry ^ ΛΑ μ He ” 1 (, the nozzle 16A is placed on the wafer W j

- The brother 2i and the mouthpiece 16B are placed on the outer moon close to the wafer w. The error is supplied to the liquid supply from the two supply nozzles 16A and 16B thus arranged, and the processing of the wafer W can be controlled to the target range of the chromium R gates, and at the same time, the outer peripheral end including the day 10 W can be surely processed. Peripheral department. The two supply nozzles 16A, 16B and the two suction nozzles 21A, 21B are alternately arranged in the circumferential direction of the wafer W by X $ 9B ® '. In this case, a chemical liquid can be supplied from each of the supply nozzles 16A and 16B, and various chemical liquids can be supplied from the supply nozzles 16A and 16B. In any of the clear shapes, the liquid medicine supplied from the squirt i 6A is sucked by the 吸入1 suction nozzle 21A. The liquid medicine supplied from the second supply nozzle 16B is sucked by the second suction nozzle 2 1B. The chemical solution supplied to the wafer W can be removed by the chemical removal unit, but a small amount of the chemical liquid remains on the wafer W. Therefore, the substrate processing apparatus is provided with a cleaning liquid supply unit (not shown) for washing (rinsing) the wafer w. The cleaning liquid supply unit has a plurality of nozzles disposed on the surface side and the back side of the wafer W, and the cleaning liquid (flushing liquid) is supplied from the nozzle to the wafer W, and ultrapure water is used as the cleaning liquid 0 (Revised) 3 ] 5214 19 The replacement page will be - heart = , because the treatment liquid can not be used, the time:;;; therefore, the clean environment gas in the reaction chamber can be maintained, the same amount / "the reaction efficiency of the treatment liquid and the substrate, reducing the treatment liquid The use of the net test iga diagram and the first diagram "is applicable to the substrate processing apparatus of the present invention. The i 〇A diagram is not applicable to the substrate processing of the embodiment of the cleaning apparatus. The top view of the substrate processing device (wash 4) shown in the figure is shown in Fig. 10 and Fig. 10: The processing device is placed in the reaction chamber of the copper film.略)). This is a special cleaning device that can be used for button processing, and can also be used as a separate cleaning device. The substrate processing device has a substrate holding device. The wafer (substrate) of the cleaning process object is maintained at approximately 1 = two by the spindle 51 The pedestal 52 is configured to be fixedly held on the pedestal 52 by an empty suction or the like which is to be cleaned. The cleaning liquid discharge nozzle (cleaning liquid supply unit) 53 is placed in the vicinity of the wafer and the surface. The discharge port 53 of the nozzle 53 is formed from the center of the wafer w toward the peripheral edge portion, and is formed at an angle of 45 from the surface of the wafer w. Therefore, the opening is formed at an elevation angle of $. Therefore, the cleaning liquid L and the surface of the wafer W are formed. The incident angle is 45. The following angle 0 ° X 'the cleaning liquid L is supplied to the predetermined washing target area at a flow rate of 〇"m/s or more. Further, 'the cleaning liquid discharge nozzle can be placed on the inside of the 曰B 1® W (four), or on the surface side and the morning side of the wafer w. The supply device 5 of the cleaning liquid supply tank adjusts 20 (correction page) 315214 1298894 to a desired flow rate, and ejects it by the cleaning liquid discharge nozzle 53. At this time, it is suitable to remove the residual treatment liquid used for the etching treatment (etching The rinsing liquid or the chemical solution of the liquid is used as a cleaning liquid. The cleaning liquid is sprayed onto the desired cleaning area at an angle of 45 or less, and the horizontal velocity component of the cleaning liquid is larger than The velocity component in the vertical direction is supplied to the peripheral portion from the center of the substrate in the case where the velocity component in the horizontal direction is large. Therefore, the processing liquid existing in the cleaning target region can be quickly obtained from the wafer. When the crystal B1 is washed ##, the flow rate of the cleaning liquid from the center of the wafer toward the peripheral portion is increased, and the replacement of the cleaning liquid can be accelerated, and the amount of the cleaning liquid can be minimized. And carry out efficient washing. Oh, by only washing If the liquid is supplied to the part to be cleaned, the amount of the cleaning liquid can be further reduced. If the vertical velocity component of the cleaning liquid on the incident substrate is large, the cleaning liquid will be reduced by collision with the wafer. The shape is such that the incident angle of the cleaning liquid phase on the surface of the wafer is 45 or less to reduce the vertical velocity component of the cleaning liquid when the cleaning liquid hits the wafer, and the cleaning liquid is prevented from being bombarded on the wafer surface. According to the above point of view, the angle of incidence (elevation angle) of the cleaning liquid phase with respect to the wafer surface is preferably as small as possible, preferably 3 Å. Below, preferably Μ. Below. Although the ideal incident angle is 0. Preferably, since the cleaning liquid discharge nozzle 53 or the like cannot be disposed in contact with the surface of the wafer, it is preferable to set the incident angle (elevation angle) so that the incident direction of the cleaning liquid is as parallel as possible with the surface of the wafer. The flow rate of the clean liquid is based on the viewpoint of increasing the velocity component in the horizontal direction (Revised) 3] 5214 21 1298894 The result is the net effect of the net effect. Table 1 shows the elevation and flow rate of the cleaning solution. Inspection. In this table, vertical The angle is the flow velocity in the horizontal direction. In the table, it indicates that a good washing effect is obtained, and the X mark indicates that the washing is not performed well. The rotation speed of the wafer is 1 〇〇mi η-1, and the interval between the washing target area and the washing and discharging is It is 30 to 50 mm.

15.涑 to 35. Good washing results are obtained. Further, if the flow rate of the cleaning liquid is =1 · 1 m / s, it is at an elevation angle θ 1 5 . To 60. Get a good wash result. Thus, the error is formed by 45 with the wafer surface. The following elevation angles are supplied to the wash night, and a washing result is supplied to the cleaning target area of the wafer at a flow rate of 0 1 / ..., · m S or more to obtain a good washing result. In particular, from Table 1, it can be seen that b - a good elevation of washing results, small elevation angle is very important. In addition, the flow rate, empty, and six values. The opening area of the discharge port that is not the nozzle is divided by the flow rate of the cleaning liquid, the rotation speed of the circle is less than 5〇〇min, and the centrifugal force is small. 22 (Revised) 3152] 4 1298894 will flow out and stay. On the wafer · 11 'It is difficult to replace the cleaning solution. On the day of the burial, the inner side of the a day is 01m/s 曰. Even if it rotates at a low speed, the cleaning solution can be supplied with a high efficiency. The cleaning liquid discharge nozzle 53 can be freely moved. Fortunately, the discharge nozzle 53 can be disposed at a preferred position in the wafer cleaning target area. Further, after the washing process, the washing liquid discharge nozzle is evacuated = the wafer can be easily moved in and out. In the substrate processing apparatus of the present embodiment, the cleaning liquid 53_2 including the discharge port 53 is disposed on the front and back sides of the wafer w, whereby ": The round table has two sides. Therefore, it is possible to use the contact wafer ^ σ 卩 to hold the sandwich substrate holding portion of the wafer w at the same time. Thus, when the cleaning liquid is discharged from the nozzle ... 3 乍 = 0 W when the front side is ' The substrate can be cleaned at the same time as above, and the cleaning liquid discharge nozzle 53+53-2 does not need to be symmetrically arranged, and the elevation angle and the arrangement position p ... can be arbitrarily changed, the first map, the 12th and the 13th The substrate processing apparatus which is applied to the cleaning apparatus of the embodiment of the present invention is shown in Fig. 1. The substrate processing apparatus (cleaning apparatus) of this embodiment is provided with the board|substrate holding part which consists of the clamp heads 61a, 6lb, 61c, and (4). The wafer w is kept substantially horizontally rotated. Further, the rotary table type substrate holding portion shown in Fig. 10A can be used. Further, the substrate processing unit is provided with a processing unit for performing the etching process. The liquid (treatment liquid) is supplied to the peripheral portion of the wafer w, and is removed from the formation A film such as a steel film in the peripheral portion. (Revised) 315214 23 1298894 The substrate processing apparatus further includes washing for etching the etching liquid remaining in the etching target region of the wafer w after the etching process of the wafer w is performed. The cleaning device 63 (cleaning liquid supply unit) 63. The cleaning device 63 supplies the cleaning liquid to the discharge port 63a', and the cleaning liquid is supplied to the peripheral portion including the wafer w. The region b removes the treatment liquid remaining in the region b. The liquid flow of the cleaning liquid flows from the inner side of the wafer w to the peripheral portion in the radial direction, and the surface of the disk wafer W is formed 45. The elevation angle as small as possible below. The supply of the cleaning liquid is performed on the wafer W, the surface, and the cleaning of the cleaning liquid L is supplied to the liquid flow extension line of the cleaning liquid L supplied from the center of the wafer 1 to the peripheral portion. The liquid cutting portion 65. The 65 position is on the same plane as the surface of the wafer W. The shape of the guide groove is as shown in Fig. 12B, and is arranged to be received from the periphery of the wafer W. Cleaning of the Pk Liquid L. Flow through the receiving drain pipe. The treatment liquid is passed through the figure below. The operation of the device will be described. By the head 2: 61.61 (1, the wafer is kept rotating. In this state, the self-processing unit 62 supplies the (four) liquid to the peripheral portion of the wafer, by borrowing, 9 Except for the steel formed on the peripheral edge of the wafer W, the wafer W is formed by the (four) process, and the cleaning device 63 cleans the area A containing = Α). Secondly, the wash is performed. The cleaning solution for the cleaning solution; the area Β. This cleaning treatment. Domain Β. At this time, the cleaning liquid and the wafer. Surface = 63 is supplied to the cleaning target area. The above flow rate, from the center of the wafer toward: :: Incident angle... As shown in the above table, the supply is as much as possible. Here, the incident angle, ^° is supplied to the cleaning liquid L in order to remove the treatment liquid remaining in the etching area (correction) 315214 24 1298894 processing area A. Area B must contain area 5 'A in this shape, and area b is preferably as narrow as possible: Right area B can reduce the amount of cleaning liquid used and wash it efficiently. net. > By rotating the wafer w at a relatively low speed, the cleaning liquid L is supplied at a small enough angle of inclination and at a sufficient flow rate, and the domain B can be efficiently and surely washed. According to this cleaning method, since the wafer w is rotated while rotating the wafer w, only the cleaning liquid is supplied to a narrow area, so that the use of the cleaning liquid can be remarkably reduced. Further, since the incident angle 0 of the cleaning liquid on the surface of the wafer w is small, splashing of the surface treatment liquid of the wafer W can be prevented. In the meantime, the cleaning liquid supplied to the peripheral portion of the wafer W is caught by the guide groove-like receiving portion 65, and is recovered through the drain pipe shown in the figure. Therefore, the cleaning liquid from the wafer w can be prevented from splashing in the reaction chamber, and the cleaning liquid can be recovered and used. The above embodiments are merely illustrative of the embodiments of the present invention, and of course, various modifications may be made without departing from the spirit of the invention. As described above, according to the present invention, since the cleaning liquid is supplied to a limited area such as the peripheral portion of the substrate at a small elevation angle, the amount of the cleaning liquid can be reduced, and the substrate can be prevented from being contaminated by the washing liquid. At the same time, the clean environment gas in the reaction chamber can be maintained. Second, refer to the first! 4 is a view showing a plating apparatus for applying copper plating to a semiconductor wafer. The key is provided with a substrate processing apparatus having a marking device suitable for the embodiment of the present invention. As shown in Fig. 14, the money device is placed in the rectangular device 71 (), and the configuration (correction) 3] 52] 4 25 1298894 is performed to perform copper plating on the wafer (substrate). The device 7 partitions the recording space 7 12 and the clean space 7 1 3 by the partition wall 7 U, and each of the plating space 7 1 2 and the clean space 7 1 3 can supply air and exhaust. Further, a shutter door (not shown) that is openable and closable is provided in the partition wall 7 11 . Moreover, the pressure of the clean space 713 is lower than the atmospheric pressure and higher than the pressure of the plating space 7丨2, whereby the air in the clean space 7 1 3 does not flow out of the outside of the device 7 and the plating space is made The air in 7 1 2 does not flow into the clean space 71 3 . Two inlet/outlet portions 715 for placing the substrate accommodation card E are disposed in the clean space 7 1 3; and two wafers are washed (rinsed) with pure water and dried. The seat cleaning unit 7 1 6 is further provided with a first robot 7丨7 for performing a wafer transfer fixed type rotatable type. This cleaning unit 7 16 has, for example, a unit in the form of supplying the ultrapure water to the cleaning liquid supply nozzles on both sides of the wafer table to rotate the wafer at a high speed, dewatering and drying. On the other hand, in the plating space 7丨2, the pre-processing for wafer money is performed, and the two pre-processing units 72 1 of the pre-processed wafer are flipped by the flipper 720; A circular plating film forming unit 722 is provided with a round copper surface facing the surface, and two first substrate carriers 723a and 723b for holding the wafer are placed. Further, a rotatable free-ride type second robot 724 that performs wafer transfer is further provided. In the electroplating apparatus, two substrate processing apparatuses (etching apparatuses) 725 are disposed in the clean space 713, and the etched wafers are processed by a chemical solution (treatment liquid), and the substrate processing apparatus 725 and the substrate are disposed. The second substrate stages 726a and 726b between the cleaning units 716 are cleaned. Further, the position between the two substrate processing apparatuses 725 is provided by a rotary free type for performing wafer transfer.

26 (Revised) 3152M 1298894 3rd robot 727. The first substrate carrier and the second substrate stage of the one of the above-described ones include a reversing machine 720 that is arranged to wash the wafers while flipping the wafers. The first robot 717 is a card, a cleaning unit 716, and a second exit that are placed in the inlet/outlet section.

(10) The wafer is transported between the second robot 724, and the second robot 727 is transported on the second substrate in the second substrate 723a, 72, the pre-processing unit 721, and the plating film forming unit 722. The stage 723/723b, the substrate processing apparatus 725, and the substrate 2, 726a, and 72 are transported by the substrate. Further, a container 728 is installed inside the device 710 so as to be located at the foregoing! Below the substrate stage 723a, the adjustment operation is completed, and the robot 724 takes out the adjustment operation wafer from the container 728, and returns to the container 728 after the adjustment operation is completed. By arranging the container 728 for accommodating the transport wafer in this manner in the apparatus 71, it is possible to prevent the contamination associated with the operation wafer from being adjusted from the outside or the yield to be low when the operation is adjusted. Further, the position of the container 728 may be any position in the device 71, as long as it is a position i that can be taken out and stored by the robot for the adjustment operation. However, by configuring it in the first! The vicinity of the substrate stage 723a can be subjected to a plating process after the adjustment operation using the adjustment operation wafer, and then the plating process is started, and after being washed and dried, it is stored in the container 728. Fang, this description machine is for people. The 7 7 7 system uses two submersible manipulators, the upper side is a dry manipulator, the lower side is a wet manipulator, the robot is a robot (revision) 3] 5214 27 1298894 724, 727 Use a robot with two sinking types, and both are wet robots. However, of course not limited to this. Next, an outline of the flow direction of the wafer in this plating apparatus will be described. The wafer surface (component forming surface, processing surface) is upward and is housed in the cassette. Loaded on the input / discharge. And, the first! The robot 717 takes out the wafer from the jam, moves it onto the second substrate stage 726a, and places the wafer on the second substrate stage 726 & Further, the 'g3 robot 727 moves the wafer placed on the second substrate stage 72' to the first substrate stage 723a. Next, the second robot 724 receives the wafer from the L-th substrate stage 723a and transfers it to the pre-processing. After the pre-processing of the kitchen processing unit 721 is completed, the unit 721 re-transfers the wafer to the second robot 724 by the turning machine MO, and the second robot Μ: transfers the wafer to the plating film forming unit 722. The moxibustion money film forming unit 722 performs the money processing and drying of the wafer = transferring the wafer to the second robot 724, and the second robot (2) placing the crystal substrate (four). The turning device of the first substrate carrying table = : The surface of the two rounds is turned upside down... The third robot m moves the wafer to the ground device = the device 725. The substrate processing device (3) is given the last name = the third robot 727 (four) 2 substrate carrier coffee delivery. The second robot 717 receives the wafer from the second substrate stage, and 曰; == the net unit 716, and performs the dry soldering of the pure water in the cleaning unit 716 and the rotary drying. / The day of the wood is stored in the cassette of the loading section 715 [Fig. 1] Display counter tank applies to the first embodiment of the present invention]

(Revision) A cross-sectional view of a substrate processing apparatus of 3152M 28 1298894. Fig. 2A is a perspective view showing an etching portion of a substrate processing apparatus (etching apparatus) according to a third embodiment of the present invention. Fig. 2B is a side view of the etching portion shown in Fig. 2A. Fig. 2C is a plan view of the etching portion shown in Fig. 2A. Fig. 3A and Fig. 3B are side views showing another example of the chemical solution supply unit of the substrate processing apparatus according to the embodiment of the present invention. Fig. 4 is a schematic view showing a gas-liquid separation unit in which substrate processing is ruptured in the first embodiment of the present invention. Fig. 5A is a schematic view showing a gas-liquid separation unit and a regeneration unit of the substrate processing apparatus according to the embodiment of the present invention. Fig. 5B is a schematic view showing another example of the gas-liquid separation unit and the regeneration unit. Fig. 6 is a cross-sectional view showing a substrate processing apparatus applied to an etching apparatus according to a second embodiment of the present invention. Fig. 7 is a perspective view showing a cylinder chuck and an etching portion of a substrate processing apparatus (etching I) according to a second embodiment of the present invention. Fig. 8 is a side view showing a chemical solution supply unit of a substrate processing apparatus applied to an etching apparatus according to a third embodiment of the present invention. Fig. 9A is a side view showing a chemical solution supply unit of a substrate processing apparatus applied to the remnant device of the fourth embodiment of the present invention. Fig. 9B is a view showing another example of the chemical supply unit and the chemical removal unit of the substrate processing apparatus (etching apparatus) according to the fourth embodiment of the present invention. 29 (Revised) 3] 52] 4 1298894 Fig. 1A is a side view showing a main portion of a substrate processing apparatus which is not applicable to the cleaning apparatus according to the fifth embodiment of the present invention. Fig. 10B is a plan view showing the main part of the substrate processing apparatus (cleaning apparatus) shown in Fig. 。A. Fig. 11 is a side view showing a modification of the substrate processing apparatus (cleaning apparatus) according to the fifth embodiment of the present invention. Fig. 12A is a plan view showing a main part of a substrate processing apparatus applied to a cleaning apparatus according to a sixth embodiment of the present invention. Fig. 12B is a cross-sectional view showing the main part of the substrate processing apparatus (cleaning apparatus) shown in Fig. 12A. Fig. 13 is a cross-sectional view showing the peripheral portion of the substrate in the cleaning step. Fig. 14 is a plan view showing a plating apparatus for applying copper plating to a substrate having a substrate processing apparatus suitable for the apparatus of the present invention. [Description of component symbols] 1 Reaction chamber 1 a Reaction chamber body lb Bottom 2 Reaction chamber cover 2a Opening 3 Discharge port 6 Upper shaft 6a Flange portion 9 Catheter 10 Upper disc 11 Vacuum chuck 11a Through hole lib Opening portion 12 Inert gas Supply source 15 chemical solution supply unit 16 supply nozzle 16a opening portion 16A first supply nozzle 16B second supply nozzle 17 chemical liquid introduction tube

(Revised) 3I52M 30 1298894 18 Chemical solution storage tank 20 Chemical liquid removal unit 21 Suction nozzle 21 A First suction nozzle 21B Second suction nozzle 22 Chemical liquid discharge pipe 23 Suction source 27 Gas-liquid separation portion 28 Horizontal sensor 32 Regenerating sections 35a to 35f roller chuck 51 main shaft 52 pedestals 53, 53-1, 53-2 cleaning liquid discharge nozzles 53 ^ 53 - la, 53-2a * i non-outlet 54 substrate holding portion 57 supply devices 61a, 61b, 61c, 61d chuck portion 62 treatment portion 63 cleaning device 63a cleaning liquid discharge port 65 receiving portion 710 device 711 partition wall 712 plating space 713 clean space 715 inlet/outlet portion 716 cleaning unit 717 first robot 720 reverse Machine 721 pre-processing unit 722 plating film forming unit 723a, 723b first substrate stage 724 second robot 725 substrate processing apparatus 726a, 726b second substrate stage 727 third robot 728 container L cleaning liquid W wafer 31 ( Amendment) 315214

Claims (1)

1298894 Patent Application No. 92130014 (96) January 6曰) Patent Application: 1. A substrate processing apparatus characterized by comprising: a substrate that maintains a substrate substantially horizontally and rotates at a low speed of 500 min or less The holding portion; and the distance between the processing liquid supply port and the wafer surface is set to 丨5 mm so that the processing liquid flow rate is 10 〇ml/min or less, and the processing liquid is supplied to the peripheral edge portion of the rotating substrate. The treatment liquid supply portion in which the treatment liquid phase is stationary with respect to the substrate. The substrate processing apparatus according to claim 2, wherein the processing liquid removing portion that removes the processing liquid from the substrate is provided. 3. The substrate processing apparatus according to claim 2, wherein the processing liquid removing portion is disposed to suck the processing liquid on the substrate. 4. The substrate processing according to the third aspect of the invention, wherein the processing liquid removing unit includes a gas-liquid separating unit that separates the sucked processing liquid from the gas. The substrate processing apparatus of the fourth aspect of the invention, wherein the processing liquid separated by the gas-liquid separation unit is regenerated and supplied to the regeneration unit of the processing liquid supply unit. 6. The substrate processing apparatus according to claim 2, wherein the plurality of processing liquid supply units are provided. A substrate processing apparatus according to Patent Application No. 11-6, wherein a plurality of the processing liquid removing portions are provided. 8. The substrate processing apparatus according to claim 1, wherein a purging mechanism for supplying 1*month of the gas to the surface of the substrate is provided. 9. A substrate processing method comprising: (Revised) 315214 32 1298894 Patent No. 92130514 (96 January 1 曰 6) Keeping the substrate substantially horizontal and rotating at a low speed of 500 ηιηηι or less; The processing liquid is supplied to the peripheral edge portion of the rotating substrate so that the processing liquid phase is stationary with respect to the substrate, such that the distance between the processing liquid supply port and the wafer surface is set to 5 mm or less. And sucking up the treatment liquid on the substrate. 10. A substrate processing apparatus comprising: a substrate holding portion that holds a substrate substantially horizontally rotated; and a substrate 45 formed on a surface of the substrate. The cleaning liquid outlet of the elevation angle is supplied to the cleaning liquid supply unit on the surface of the substrate from the center of the substrate toward the peripheral portion at a speed of O.lm/s or more. The substrate processing apparatus according to claim 10, further comprising a cleaning liquid receiving portion disposed on the same plane as the surface of the substrate: the opening of the cleaning liquid supply region on the substrate, and receiving from the substrate For example, the substrate processing apparatus of the 1G item is disposed in the vicinity of the surface of the substrate. 13. The substrate processing apparatus according to claim 12, wherein the cleaning liquid receiving portion is disposed on the same surface as the substrate, and is provided to the opening of the cleaning liquid supply region on the substrate, and the cleaning liquid . Recycling of the receiving portion 14. A substrate processing method is to use a cleaning liquid outlet that is open to the surface of the substrate, and an elevation angle of 〇 lm / s or more and 5 or less, from the rotating base (revision) 31521 ^ 33 • ^ 298894 Patent Application No. 92130614 (January 6, 1996) The center of the plate is supplied with a cleaning liquid toward the peripheral portion to wash at least one of the front surface and the back surface of the substrate. A substrate processing method comprising: supplying a treatment liquid to a peripheral portion of a rotating substrate; and forming a β from the surface of the substrate after processing the peripheral portion of the substrate. In the following, the cleaning liquid discharge port of the sputum is opened, and the cleaning liquid is removed from the center of the substrate toward the periphery to the peripheral portion of the 匕3 substrate, and the residual treatment liquid in the region where the treatment liquid is removed is removed by the cleaning liquid. The substrate processing method of the fifteenth item of the patent is described as the cleaning liquid discharge port, and the washing liquid is supplied to the base door edge in the direction of the surface of the slab. 17. If the scope of the patent application is 16th, it is placed in the base of the 盥基, which is the 7 7 孜 先 先 先 先 先 先 先 先 先 先 先 回收 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先 回收 回收 回收 回收(Revised) 315214 34 1298894 柒, designated representative map: (1) The representative representative of the case is: (1). (2) The symbol of the representative figure of the representative figure is simple: 1 reaction chamber lb bottom 2a opening 6 upper Shaft 9 Catheter 11 Vacuum chuck W Wafer la Reaction chamber body 2 Reaction chamber cover 3 Discharge tube 6a Flange portion 10 Upper disc 11a Through hole 捌. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 5 (amendment) 3〗 52M