TWI298823B - Spin-on-glass anti-reflective coatings for photolithography - Google Patents

Description

A7 B7 1298823 V. INSTRUCTIONS (1) TECHNICAL FIELD The present invention relates generally to spin-on glass materials, and more specifically to light-absorbing spin-on glass materials and materials for making refractory anti-reflective layers. Background In order to meet the demand for faster performance, the characteristic size of the appearance of the integrated circuit device has been reduced. The fabrication of devices with smaller form factors poses new challenges in many conventional methods for semiconductor fabrication. One of the most important of these methods is the lithography. It has long been recognized that line width variation in patterns made by lithographic printing can cause light to reflect optical interference from the underlying layer of the semiconductor wafer. The change in the thickness of the photoresist on the surface of the underlayer also causes the line width to become easier. An anti-reflective coating (ARC) applied beneath the photoresist layer is used to prevent interference from the reflected reflections. In addition, the anti-reflective coating partially planarizes the surface state of the wafer, which helps to improve the line width over the improved step because the photoresist is more uniform in thickness. Organic polymer films, particularly those conventionally used to expose photoresists at the 丨 line (365 nm) and g line (436 nm), have recently been used as absorbers at 248 nm and have been used as anti-reflective coatings. However, the fact that organic ARCs share many chemical properties with organic photoresists limits the useful processing order. In addition, the organic ARC will be intermixed with the photoresist layer. One solution to avoid intermixing is to introduce a thermosetting binder as an additional component of organic ARC, for example, as described in U.S. Patent 5,693,691, Flaim et al. Dyes may also be incorporated into the organic ARC, and if desired, additional additives such as wetting agents, adhesion promoters, preservatives, and plasticizers, as described in U.S. Patent 4,910,122, Arnold et al. 64746-970318.doc

1298823

Cerium oxynitride is another material used as an anti-reflective coating. However, the use of oxynitride as a system to disrupt the interference process rather than absorbance means that the control and material of the oxynitride-containing thickness that is required to be extremely tight does not work well as a function of the arbitrarily variable surface condition. In addition, oxynitride dreams are typically deposited by chemical vapor deposition' and the photoresist layer is typically applied using a spin coater. Additional chemical vapor deposition adds processing complexity. Another material that can be used as an antireflection layer is a spin-on-glass (SOG) composition containing a dye. Yau et al., U.S. Patent 4,587,138, discloses a dye, such as Basic Yellow #11, mixed with spin-on glass in an amount of about 1% by weight. 4,100,503 discloses a crosslinked polyorganosiloxane containing an inorganic dye such as butyl hydrazine 2, Ci: 2 〇 7 'M0O4 'Mn 〇 4 ' or Sc 〇 4 and an adhesion promoter. Allman also teaches that the spin-on glass composition also acts as a planarization layer. However, in the currently disclosed spin-on glass, the dye combination is not optimal for exposure to deep ultraviolet rays, particularly 248 and 193 nm light sources, which become used to create devices having a small form factor. In addition, not all dyes can be easily incorporated into the absolute spin-on glass composition. There is a need for an absorbent spin-on glass anti-reflective coating that absorbs strongly and uniformly in the deep ultraviolet spectral region. It is desirable for the ARC layer to be opaque to the photoresist. It would also be desirable to provide a method of mixing a class of absorbent compounds into various S0G materials while maintaining the desired properties of the original spin-on glass material. Overview Anti-reflective coatings for deep UV photolithography contain one or more organically absorbing compounds mixed into a spin-on-glass (SOG) material. Spin-on glass materials include methyl decane, methyl sesquioxanes, phenyl oxoximes, benzene 64746-970318.doc This paper scale applies to China National Standard (CNS) A4 specifications (210X 297 mm) 1298823

The base sesquioxane, methylphenyl siloxane, decyl phenyl sesquioxane and phthalate polymers. As used herein, a spin-on glass material also includes a hydroquinone polymer of the formula (Ho-i.GSiOmoh and hydroquinone sesquioxalate having the formula (HSiOu) wherein X is greater than about 8. Also includes hydroquinone. a copolymer of sesquioxalic acid and a hydrogenated oxyhydrogenated alkane or a hydroxyhydrogen hydride. The spin-on glass material further comprises an organic hydrogenated oxime of the formula (Hw.cSiOmGWRw GSi〇1 w Q)m and a formula ( An organic hydrogenated hydrazine sesquioxide polymer of HSiO^WRSiO^k, wherein m is greater than 0, the total number of η and m is greater than about 8 and the size is alkyl or aryl. The coating solution of the spin-on glass material mixed with the absorbing compound Used to form an antireflective film on various layers of integrated circuit devices. Absorbing compounds suitable for use in the present invention absorb strongly at wavelengths below about 375 nm or below about 260 run. In particular, suitable for absorbent compounds At least about 10 nm wide wavelength range around wavelengths such as 248 nm, 193 nm, or other UV wavelengths such as 365 nm, which can be used for photolithography to absorb strongly. The chromophore of a suitable compound usually has 1 to 3 benzene rings. Can be or not fused. The miscible compound can have Attached to the chromophore up to the reactive group, the reactive group includes a hydroxyl group, an amine group, a carboxylic acid group, and a substituted formazan bonded to the oxime, 2 or 3 alkoxy or halogen atom substituents The reactive group may be directly bonded to the chromo group or the reactive group may be attached to the chromophore through the hydrocarbon bridge. Examples of suitable organic absorbing compounds include 2,6-dihydroxy decanoic acid, 9 oxime acid, 9-蒽methanol, alizarin, hydrazine, primrose, 2_ carbyl _4 (3_3 ethoxylate sulphide propoxy benzoquinone, rosaceic acid, triethoxy methacrylate Imine, 9-E Wei-Mercaptotriethoxylate, Phenyltriethoxyoxane, Even 64746-970318.doc _6· This paper scale applies to China National Standard (CNS) A4 specification (210X297 Gongdong) 1298823 A7 4 DESCRIPTION OF THE INVENTION (Nitrogen compounds such as 4-phenyl azophenol and mixtures thereof. According to another aspect of the invention, a method of synthesizing an absorbent spin-on glass combination is provided. Spin-on glass materials are conventionally derived from decane. Synthesis, female IT 9 —- ^ 2: ethoxy decane, tetraethoxy decane, methyl triethoxy decane, dimethyl diethoxy decane, tetraoxan oxane, A Trioxoxane, trimethoprim, dimethyldimethoxydecane, phenyltriethoxydecane, phenyltrimethoxine gamma-phenyldiethoxydecane, and diphenyldimethoxydecane. Halodecane , , is chlorodecane, for example, trichlorodecane, methyltrichlorodecane, ethyl trioxane, phenyl trioxane, tetraoxane, dichlorodecane, methyl dichloride, alkane, dimethyl Chlorodecane, chlorotriethoxy decane, chlorotrimethoxy decane, chloromethyldiethoxy decane, chloroethyltriethoxy decane, chlorophenyltriethoxy chloromethyltrimethoxy decane, chloroethyltrimethoxy decane The gas phenyl trimethoxide is also used as a decane reactant. A method of making an absorbing spin-on glass composition comprising combining one or more alkoxides or one or more decanes, one or more miscible organic absorbing compounds, an acid/water mixture, such as a nitric acid/water mixture, and or A plurality of solvents are formed to form the reaction mixture; and the reaction mixture is refluxed to form an absorbent spin-on glass composition. The spin-on glass composition thus formed is diluted with one or more solvents to provide a coating solution for producing films of various thicknesses. Alternative methods of making absorbent spin-on glass compositions, including the use of dentate and phase transfer catalysts, are also provided. According to another aspect of the present invention, there is provided an absorbent composition of the chemical composition 9 - decanoic acid-methyltriethoxy decane. The method for synthesizing 9-fluorene carboxy-methyltriethoxy oxane includes a combination of 9-fluorene carboxylic acid, chloromethyltriethoxy decane, and triethylamine 64746-970318.doc -7. Standard (CNS) A4 size (210X297 mm) Ϊ298823 A7 ______B7___ V. Description of invention (5) and solvent to form a reaction mixture; refluxing the reaction mixture; cooling the reflux-reaction mixture to form a precipitate and residual solution; The solution is used to produce liquid 9-indole carboxy-indenyl triethoxy decane. BRIEF DESCRIPTION OF THE DRAWINGS Figures 1 a and 1 b illustrate the chemical formula of an absorbent compound incorporated into a spin-on glass composition according to a specific example of the present invention. Figures 2 a-2h illustrate the use of an absorbent spin-on glass composition in accordance with an embodiment of the present invention as an anti-reflective coating during photolithography. DETAILED DESCRIPTION Anti-reflective coatings for deep UV photolithography include one or more organically absorbing compounds incorporated into a spin-on-glass (SOG) material. The absorbent spin-on glass composition is dissolved in a suitable solvent to form a coating solution and applied to various material layers in the manufacture of a semiconductor device. Absorbent spin-on glass anti-reflective coatings are designed to be easily integrated into existing semiconductor manufacturing processes. Features that provide integration include resistance to developer, thermal stability during standard photoresist processing, and selective removal of the underlying layer. A spin-on glass material for use in a composition according to aspects of the present invention includes methyl oxa oxide, methyl fluorenoxane, phenyl oxoxane, phenyl sesquioxanes, methyl phenyl oxime Alkane, methylphenyl sesquioxanes and silicate polymers. As used herein, a spin-on glass material also includes a hydroquinone polymer of the formula 〇Si〇i Η 1 and a hydroquinone sesquioxane polymer having the formula (HSiOi.Ox wherein X is greater than about 8. Also included Copolymer of hydroquinone sesquioxane with alkoxyhydroxane or hydroxyhydrogen hydride. The spin-on glass material further comprises the formula (Hw.oSiO^2 G)n(R(}丨QSi〇i 5 2 Organic Hydrogen Oxide 64746-970318.doc _8_ This Paper Scale Optima® S Home (CNS) A4 Specification (21G X 297 mm) ---------- A7 B7 1298823 V. Description of Invention (6) polymer, general formula (HSiO^MRSiO^Ui organohydrogenated hydrazine sesquioxide polymer, wherein m is greater than 〇, the total number of η and m is greater than about 8 and R is a burnt group or a molybdenum. Several useful organic hydrogens The fossil oxy-fired polymer has a total number of η and ^ of from about 8 to about 5000, wherein R is a CVC20 alkyl group or a C6-C12 aryl group. The organohydrogenated hydrazine and the organic hydrazine sesquioxane polymer are substituted. Spin-coated polymer. Specific examples include methylhydroperoxane, ethyl hydrogen hydride, propyl hydrogen hydride, tert-butyl, hydrogen hydride, phenyl hydrogen hydride, Hydrogenated sesquioxanes, ethyl hydrazine sesquioxanes, propyl hydrogen sesquioxanes, tert-butyl hydrazine sesquioxanes, phenyl hydrazine sesquioxanes, and combinations thereof. Tea and ruthenium compounds have significant absorption at 248 nm and below. Benzene bottoms are also referred to herein as phenyl-based compounds with significant absorption at wavelengths shorter than 2 。. Although such naphthalene, anthracene and phenyl-based compounds are often It is called a dye, but the term used herein is an absorbent compound because the absorbency of such compounds is not limited to the wavelength in the visible region of the spectrum. However, not all of the absorbent compounds can be incorporated into spin-on glass for use as an ARC material. The absorbent compound suitable for use in the present invention has an absorption tip having a wavelength range of at least about 1 〇 claw width, a center surrounding wavelength such as 248 nm, 193 nm or other ultraviolet wavelength such as 365 rnn, which can be used for photolithography. Narrow absorption peaks, for example, less than 2 nm wide, are undesirable for absorbing compounds of such wavelengths. Suitable chromophores for absorbing compounds typically have one, two or three benzene rings, which may or may not be Fused. The non-mixable absorbing compound has a reactive group attached to the chromophore, the reactive group includes a hydroxyl group, an amine group, a carboxylic acid group, and is bonded to one, two or three "departing groups" with hydrazine. For example, alkoxy or halogen atom 64746-970318.doc 0 • 9 - This paper scale is suitable for B ® household material (CNi) A4 specification (210 X297 public 6 1298823

Substituting the carboxyalkyl group. Ethoxy or methoxy or gas atoms are often used as leaving groups. Thus, suitable reactive groups include decyloxy, decyloxy, decyloxy, 9 methoxy, dimethyloxy, 1,3-trimethoxy, chloromethyl sulfanyl, dioxane Formyl and trichloromethane. The reactive group may be bonded directly to the chromophore, for example, in phenyl triethoxylate, or the reactive group may be attached to the chromophore via a hydrocarbon bridge, for example, at 9-蒽carboxy-methyl three Ethylene oxime is burnt inside. Including, on the chromophore, it has been found to be advantageous, for example, to promote the stability of the absorptive SOG film. Absorbing compounds containing an azo group, _N=N_, and a reactive group, particularly those containing a phenyl ring of a phenyl ring, may also be used, especially when it is desired to have an absorbance of about 3 5 5 nm. In the absorbent spin-on glass composition, the absorbent compound can be incorporated into the spin-coated glass matrix by voids. In addition, the absorbent compound is chemically bonded to the spin-on glass polymer. Without being bound by any theory, the inventors suggest that a hybrid absorbing compound provides beneficial results via a reachable reactive group bonded to a spin-on glass polymer pillar. Examples of the absorbent compound suitable for use in the present invention include 2,6-dihydroxyindole@quinic acid (1), 9-indole carboxylic acid (2), 9-fluorenyl alcohol (3), halogen (4), hydrazine (5). ), primrose (6), 2-hydroxy-4 (3-triethoxymethyl decylpropoxy)-diphenylene I (7), rosin (8), triethoxy methoxypropyl propyl i,8-indoleimine (9), and 9-fluorene carboxy-mercaptotriethoxy decane (1 fluorene), phenyl triethoxy decane (11), 4-phenyl azo (12) and combination. The chemical formula of the absorptive compound 1·12 is shown in Figure ia-ib. Favorable results can be obtained, for example, with 9-decanoic acid-methyltriethoxydecane (10) and α-indole methanol (3), 2-hydroxy-4(3-triethoxymethylnonanepropoxy)-di A combination of benzophenone (7) and rosin acid (8), and a combination with phenyltriethoxy decane (11). 64746-970318.doc -10- This paper scale applies to China National Standard (CNS) Α4 specification (210 X 297 mm) A7 B7 1298823 V. Description of invention (8) Absorbent compounds 1 - 9 and 1 2 are commercially available From, for example, Aldrich Chemical Company (Milwaukee City, WI). The absorptive compound 10 was synthesized by the following method. Absorbent Compound 11 is commercially available from Gelest Corporation (Tullytown, PA). Examples of phenyl bottom absorbent compounds other than the absorbent compound (11) are also commercially available from Gelest, including those attached to a benzene ring or a substituted phenyl group such as nonylphenyl, phenyl and chlorine. The structure of the base of the methyl phenyl group. Specific phenyl bottom absorbent compounds include phenyl dimethoxy oxime, benzyl trichloro decane, chloromethyl phenyl trimethoate, and phenyl trifluorocarbon sinter, to name a few. Containing 1 or 2 "officyl", diphenyl sulphur, such as diphenylmethyl ethoxy decane, diphenyl diethoxy decane, and diphenyl chlorite, to name a few, It is also a suitable miscible compound. The method of synthesizing 9-fluorene carboxy-mercaptotriethoxy decane (1 〇) is carried out using 9-indole carboxylic acid (2) and chloromethyldiethoxy oxime as a reactant. The system is combined with triethylamine and methyl isobutyl ketone (MIBK), previously dried by molecular sieves to form a reaction mixture, which is heated to reflux and reflux for about 6 to 1 hour. After reflux, the reaction mixture is cooled. Overnight, resulting in a large amount of solid precipitate. The residual solution was spin-coated and evaporated, filtered through a silica gel column and rotary evaporated for a second time to produce 9-decanoic acid-methyltriethoxysilane (1 〇) as a dark amber oily liquid. It can be purified. According to another aspect of the invention, a method of synthesizing an absorbent spin-on glass composition is provided. Spin-on glass materials are typically synthesized from various decane reactants, including, for example, diethoxy decane (HTE®). s), tetraethoxy decane (TE〇s), decyl triethoxy decane (MTE) OS), dimethyldiethoxy decane, tetramethoxy decane 64746-970318.doc lt -11 - This paper scale applies to national standard (CNS) A4 specification (210X297 public y----- A7 B7 1298823 five , invention description (9) (TMOS), methyl methicone (MTMOS), trimethoate, dimethyl dimethoxy decane, phenyl triethoxy decane (PTEOS), phenyl trimethoxy decane (PTMOS), diphenyldiethoxyoxane and diphenyldimethoxydecane. Halogenated decane, especially chlorodecane such as trichlorodecane, decyltrichlorodecane, ethyltrichlorodecane, phenyltrichloromethane , tetrachlorodecane, dichlorodecane, methyl dioxane, dimethyl dichlorodecane, chlorotriethoxy decane, chlorotrimethoxy decane, chloromethyl triethoxy decane, chloroethyl triethoxy decane, chlorine Phenyltriethoxyoxane, chloromethyltrimethoxydecane, chloroethyltrimethoxydecane, and phenyltrimethoxyoxane are also used as the decane reactant. For the manufacture of an absorption spin-on glass composition, an absorbent compound such as absorbency Compound 1 - 2 2 or a combination thereof is combined with decane in the synthesis of the SOG material. In the first method, the reaction is mixed. Compounds, including lithene calcined reactants, for example, HTEOS or TEOS and MTEOS, or TMOS and MTMOS; or alternatively, tetrachlorite and methyl trichloroacetate, one or more absorbent compounds such as absorbent compounds 1 - 1 2 ; a combination of solvent or solvent; an acid/water mixture, formed in a reaction vessel. Suitable solvents include acetone, 2-propanol and other simple alcohols, ketones and esters such as 1-propanol, MIBK , propoxypropanol and propyl acetate. The acid/water mixture is, for example, nitric acid and water. Other aprotic acids or acidic anhydrides such as acetic acid, formic acid, phosphoric acid, hydrochloric acid or acetic anhydride can be used in the acid mixture. The resulting mixture was refluxed between about 1 and 24 hours to produce an absorbent S0G polymer solution. The absorbent SOG can be diluted with a suitable solvent to achieve a coating solution which produces films of various thicknesses. Suitable dilution solvents include acetone, 2-propanol, ethanol, butanol, methanol, propyl acetate, ethyl lactate and propylene glycol propyl ether. City 64746-970318.doc - 12- This paper scale applies to China National Standard (CNS) A4 Specifications (210X 297 mm) 1298823

m r❶pas°i-p. A dilution solvent having a high boiling point such as an ethyl lactate film is found to be beneficial. It is believed that the high-boiling solvent reduces the bubble under the top layer of the cross-link to become trapped; the boiling solvent will be in the film. Now it is driven away from the two gaps during the baking process. Additional solvents which may be used in the present invention include ethylene glycol dimethyl acrylate: alternatives are known as fat, benzamidine, dibutyl sulfonate, dipropylene propylene glycol, propylene glycol acetate ether and pentanol. ;F See the need, surfactants such as 3m (Minneapolis, Hall) products F (10), the products provided by the company (Japan) ... coffee, also added to the coating solution. The coating solution is typically between about 0.5 and 20% by weight polymer. The coating solution was filtered by standard over-twisting techniques prior to use. According to a second method of forming an absorbent SOG material, a reaction mixture, including a decane reactant, one or more absorbent compounds such as an absorbent compound 1 - 12, and a solvent or a combination of solvents are formed in the reaction vessel. The reaction mixture was heated to reflux and refluxed between about 2 and 24 hours. The decane reactant and solvent are as described in the first method above. The acid/water mixture, as described above, was added to the reaction mixture while stirring. The resulting mixture is heated to reflux and reflux between about 1 and 24 hours to produce an absorbent s?G polymer. The absorbable SOG was diluted and filtered as described above to form a coating solution. The method for forming an absorbing organohydrogenus oxy-ceramic material comprises forming a mixture of a biphasic solvent comprising a non-polar solvent and a polar solvent and a phase transfer catalyst; adding one or more organic trihalogenated decane, hydrogenated tri-decane and one Or a plurality of absorbing compounds such as the absorbing compound 1 _ 丨 2 to provide a biphasic reaction mixture; and the reaction biphasic reaction mixture between 1 and 24 hours, in the range of -13-64746-970318.doc. Standard (CNS) A4 size (210 X 297 mm) 1298823 A7 A7 ______B7_ V. INSTRUCTIONS (彳1) An absorbent organic hydrogenated oxy-oxygenated polymer is produced. Phase transfer catalysts include, but are not limited to, fluorinated tetrabutyl and gasified benzyl trimethyl. Typical non-polar solvents include, but are not limited to, pentane, hexane, heptane, cyclohexane, benzene, toluene, xylene, halogenated solvents such as tetra-carbonated carbon, and mixtures thereof. Useful polar solvents include water, alcohols, and mixtures of alcohols and water. The absorbent polymer solution was diluted and filtered as described above to form a coating solution. Absorbent SOG coating solutions are typically applied to various layers used in semiconductor processing by conventional spin-on deposition techniques, depending on the particular manufacturing process. These techniques include dispensing rotation, thickness rotation, and thermal baking steps to produce an absorbent SOG anti-reflective film. Typical methods include about 2 sec. at 1 Torr and 4 rpm, and two or three cultivating steps of about 1 minute between 80 C and 300 C. The absorptive SOG antireflective film according to the present invention exhibits a reflectance index of between about 1.3 and about 2.0, and an extinction coefficient greater than 〇·〇7. An extinction coefficient greater than 0.4 can be obtained as shown in the following example 15_17. In contrast, the extinction coefficients of dielectric materials such as ceria, citrate and methyl decane are about 〇 at wavelengths greater than 190 nm. The general method of using the absorptive spin-on glass material according to the present invention as an anti-reflective layer in the photolithography process of the integrated circuit (1C) apparatus is shown in Figures 2a-2h. As shown in Figure 2a, a dielectric layer 22 is deposited on the substrate 2A. The substrate 20 is a tantalum substrate or substrate 20 consisting of one or more metal interconnect layers in a device. The dielectric layer 22 can be composed of various dielectric materials, including, for example, two derived from TEOS. a oxidized stone layer, a bismuth oxide layer, a thermally grown oxide, or a methyl hydride hydride formed by chemical vapor deposition or a dioxide dioxide of other elements or compounds. The dielectric layer 22 is usually For light 64746-970318.doc · 14 _ This paper ruler Lin Shou 8 S standard (CNS) A4 specification (21GX 297 mm) ---- 1298823 A7 ______B7 V. Invention description (12) Learn transparent medium. Absorbent S0G An anti-reflective coating 24 is applied over the dielectric layer 2 2 (Fig. 2b) which is covered by a photoresist layer 26 of a conventional positive photoresist to produce the deposit shown in Figure 2c. The deposit is exposed through the cover 3 to the outside and the external line 3 2 as shown in Fig. 2d. During exposure, the absorptive SOG ARC layer 24 absorbs the ultraviolet light 3 3 that transmits the photoresist. Because of the dielectric layer 22 is transparent in the ultraviolet wavelength range, so if the absorptive 8〇6 ARc layer 24 is not present, the ultraviolet light 32 will reflect off the bottom layer. 2〇, reduce the critical dimension, for example, the critical dimension of the exposure photoresist 27. In this example, the positive photoresist provides direct image transfer.

The exposed deposits were developed to produce the deposit of Figure 2^. The absorptive sqg ARC layer 24 is resistant to 2.5% of conventional photoresist imaging solutions such as tetramethylammonium hydride. In contrast, an organic ARC layer having the chemical properties of several photoresist materials is more sensitive to photoresist developers. In addition, it is expected that the absorptive s〇(} aRc layer is resistant to reduction chemistry and gas-base photoresist stripping, while organic ARC is not resistant. Therefore, the use of an absorptive S〇G layer facilitates photoresist rework. It is not necessary to apply the ARC layer. Secondly, the pattern is etched through the opening of the photoresist layer 26 in the absorptive layer AG ARC layer to produce the etched deposit of FIG. 2 f. The photoresist has a high selectivity. The fluorocarbon residue is used to etch the s?G ARC layer 24. The absorption of SOG in response to the fluorocarbon replies provides the added advantage of absorbing 〇G on the organic ARC layer requiring oxygen plasma etching. Oxygen plasma etching will reduce the critical size of the developed photoresist because the organic bottom photoresist will also be enriched by oxygen plasma. Fluorocarbon plasma consumes less photoresist than oxygen plasma. At the wavelength, the depth required for the focus will be limited to 64746-970318.doc _ 15 in the exposure step shown in Figure 2d. _ This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 Gongdong) ' 1298823

The thickness of the photoresist backing layer 26. For example, it is estimated that at 丨93 nm, the thickness of the photoresist layer should be approximately 3 〇〇 nm. Therefore, it is important to have an Arc layer that is selectively etchable to the photoresist when the short wavelengths are initially used. The fluorite back etch is continuously passed through the dielectric layer 2 2 to produce the deposit of Figure 2g. When the etching process is continued, the photoresist layer 26 is partially consumed. Finally, the photoresist layer 26 uses oxygen plasma or hydrogen reduction chemical stripping, while the SOG ARC layer uses buffered oxide etching, such as a standard hydrofluoric acid/water mixture, or aqueous or non-aqueous organic amine stripping. . Advantageously, the s〇G ARC layer can be stripped by a solution that exhibits good selectivity to the bottom dielectric layer. Therefore, the general lithographic printing method of Fig. 2 211 exemplifies the processing advantages of the absorbent S〇g material as an antireflection coating. A method of synthesizing an absorbent SOG material and a synthesis of an absorbing compound 1 〇, 9 蒽 carboxy-methyl triethoxy decane are shown in the following examples. Example 1 Synthesis of Absorbent s〇G containing 9-fluorene-methyltriethoxylate in a 1 liter flask '297 g 2 -propanol, 148 g of propanol, 123 g of TEOS, 6 〇g 9 - hydrazine carboxy-methyltriethoxy decane, 〇6 g 〇] M nitric acid and 72 g deionized water were combined. The flask was refluxed for 4 hours. 115 g of butanol, 488 g of 2-propanol, 245 g of acetone, 329 g of ethanol, 53 g of deionized water, and 3.8 g of 10% FC 430 (3 Μ, Minneapolis, MN) were added to the solution. Filter the solution. The solution was dispensed and then rotated at a thickness of 3000 rpm for 20 seconds and baked at 80 ° C and 180 ° C for 1 minute each. Optical properties were measured using a N&K Technology Model 12® analyzer. The film thickness was 1635 乂. At 248 nm, the refractive index (n) was 1.373 and the extinction coefficient (k) was 0.268. All the following examples use the same rotation 64746-970318.doc -16. This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 dongdong) A7 B7 1298823 V. Description of invention (14) Transfer and baking processing parameters and Determination technique. Example 2 Synthesis of Absorbent SOG Containing 9-Methanol, 2-Hydroxy-4(3-Triethoxycarbonylpropoxybenzophenone and Rose Benic Acid in a 1 liter flask, 297 g 2-propanol, 148 g of propionate, 123 g of TEOS, 77 g of MTEOS, 25 g of 9·methanol, 10 g of 2-hydroxy-4(3-triethoxymethylpyrrolidine)-benzophenone, 5 g of rose Acid, 0.6 g 〇·ι μ nitric acid and 72 g deionized water were combined. The flask was refluxed for 4 hours. In g butanol, 459 g 2-propanol, 230 g acetone, 309 g ethanol, 50 g deionized water and 3.75 g 1〇% FC 430 (3 Μ, Minneapolis, Μ N ) was added to this solution. Thickness = 1436A, n = 1.479, k = 0.1255 Example 3 Containing 9-nonanol, 2-hydroxyl - Synthesis of 4(3-triethoxymethylcarbazide propoxy benzophenone and rose acid absorption SOG in a 1 liter flask, 297 g 2-propanol, 148 g acetone, 93 g TEOS, 77 g MTEOS, 20 g of 9-indole methanol, 60 g of 2_hydroxy-4(3-triethoxymethanepropaneoxy)-benzophenone, 5 g of rosacenic acid, 0.5599 g of 〇·1 Μ nitric acid and 71.90 g of deionized water The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 44 g acetone, 59 g ethanol, 9_5 g Deionized water and 3.75 g of 10% FC 430 (3 Μ, Minneapolis, MN) were added to this solution. Thickness = 4248 again, n = 1.525, k = 0.228 Example 4 contains 9 - hydrazine, 2 Synthesis of -hydroxy-4(3-triethoxymethanepropaneoxy) benzophenone and rose acid absorption SOG 64746-970318.doc -17- This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1298823 A7 B7 V. INSTRUCTIONS (15) In a 1 liter flask, 297 g of 2-propanol, 148 g of propanol, 1〇8 g of TE〇s, 77 g of MTEOS, 10 g of 9 · 蒽 methanol, 60 g 2-hydroxy_4 (3 • triethoxymethyl decyl propyloxy) benzophenone, 5 g rosmarinic acid, 0.5 599 g 〇.1 μ nitric acid and 72 g deionized water are combined The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 44 g acetone, 59 g ethanol, 9.5 g deionized water and 3 75 g 1〇% FC 430 (3 Μ, Minneapolis) City, MN) was added to this solution. Thickness = 4275 A, n = 1.529, k = 0.144 Example 5 Absorbent SOG containing 2-hydroxy-4(3 · triethoxydecylpropoxy) benzophenone Synthesis in 1 liter of simmer, 297 g of 2-propanol, 148 g of propanol, 123 g of TEOS, 51 g MTEOS, 60 g of 2-hydroxy-4(3_triethoxymethanepropaneoxy)-diphenyl _, 0.6 g of 0·1 decanoic acid and 72 g of deionized water were combined. The flask was refluxed for 4 hours. 57 g of butanol, 88 g of 2-propanol, 44 g of acetone, 59 g of ethanol, 9.5 g of deionized water, and 3.75 g of 10% FC 430 (Minneapolis, Minneapolis, ΜΝ) were added to the solution. Thickness = 3592 again, n = 1.563, k = 0.067 Example 6 Synthesis of Absorbent SOG containing 9-Methanol. In a 1 liter flask, 297 g of 2-propanol, 148 g of acetone, 123 g of TEOS, 77 g of MTEOS, 10 g of 9-E methanol, 〇·6 g 〇·1 Μ nitric acid and 72 g of deionized water were combined. The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 44 g acetone, 59 g ethanol, 9.5 g deionized water and 3.75 g 10% FC 430 (3 Μ, Minneapolis, Μ N) were added to this solution. . Thickness==:3401 α 5 π=1.433 5 k=0.106 -18 - 64746-970318.doc This paper scale applies to Chinese National Standard (CMS) A4 specification (210 X 297 mm) 1298823 A7 ____B7 V. Description of invention (16 f Example 7 Synthesis of Absorbent SOG containing 9·蒽methanol, 2-hydroxy-4(3-triethoxymethanepropaneoxy)-benzophenone and rosmarinic acid in a 1 liter flask, 297 g 2 -propanol, 148 g acetone, 123 g TEOS, 77 g MTEOS, 20 g 2-hydroxy-4(3_triethoxymethoxydecylpropoxy)-diphenyl hydrazine, 25 g 9-hydrazine methanol, 5 g Rose erythric acid, 〇·6 g 01 μ nitric acid and 72 g deionized water were combined. The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 44 g acetone, 59 g ethanol, 9·5 g deionized water and 3.75 g 10% FC 430 (3 Μ, Minneapolis, MN) were added to this solution. in. Thickness = 3503 a 5 n = 1.475 5 k = 0.193 Example 8 Absorbent SOG containing 9-mercaptomethanol, 2-hydroxy-4(3-triethoxymethanepropaneoxy)-benzophenone and rosacenic acid Synthesized in a 1 liter flask, 297 g 2 -propanol, 148 g acetone, 123 g TEOS, 77 g MTEOS, 5 g 2-hydroxy-4(3-triethoxymethylnonanepropoxydiphenyl hydrazine, 25 g 9-蒽methanol, 5 g of rosmarinic acid, 〇·6 g 〇·ΐ Μ nitric acid and 72 g of deionized water were combined. The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 4 4 g Acetone, 59 g ethanol, 9.5 g deionized water, and 3.75 g 10% FC 430 (3 Μ, Minneapolis, MN) were added to this solution. Thickness ΑΒΑ, n = 1.454, k = 0.175 Example 9 contains 9. Synthesis of absorbing methanol, 2-hydroxy-4(3-triethoxymethanepropane oxybenzophenone, rosmarinic acid, self-enhancing and alizarin in a 1 liter flask, 297 g 2 -propanol, 148 g acetone, 123 g TEOS, 64746-970318.doc. 19. I paper scale for t ® S home standard (CNS) A4 size (21G X 297 mm) ' 1298823

77 g MTEOS, 20 g 2-Phosyl-4(3-triethoxyphthalocylideneoxy)-benzophenone, 25 g 9-蒽 methanol, 5 g rosmarinic acid, 2 g brewing, 2 g 茜, 0.6 g • 1 I Xiao I and 72 g deionized water were combined. The flask was refluxed for 4 hours. g Butanol, 88 g of 2-propanol, 44 g of acetone, 59 g of ethanol, 95 § deionized water, and 3.7 g of 10/〇 FC 430 (3 Μ, Minneapolis, MN) were added to this solution. Thickness = 3554 Further, n = 1.489, k = 0.193 Example 1 0 contains 9·蒽methanol, 2·hydroxy-4(3-triethoxymethanepropaneoxy)-diphenyl', rosmarinic acid and alizarin Synthesis of Absorbing s〇G in a 1 liter flask, 297 g 2 -propanol, 148 g acetone, 123 g TEOS, 51·5 g MTEOS, 5 g 2-hydroxy-4(3-triethoxymethyl decane Oxy) benzophenone, 25 g of 9-nonanol, 5 g of rosmarinic acid, 2 g of alizarin, and 5,599 g of hydrazine 1 were combined with nitric acid and 71.90 g of deionized water. The flask was refluxed for 4 hours. 56 68 g butanol, 87.99 g 2-propanol, 44.10 g acetone, 59.31 g ethanol, 9_55 g deionized water and 3.75 g 10% FC 430 (3 Μ, Minneapolis, ΜΝ) were added to this solution. . Thickness = 31 〇 9 again, n = 1.454, k = 0.193. Example 1 1. Synthesis of an absorbent SOG containing 9-fluorene carboxy-methyltriethoxy decane in a 1 liter flask, 297 g of 2-propanol, 148 g of acetone, 123 g of TEOS, 77 g of MTEOS, 30 g of 9-onion methanol Carboxy-mercaptotriethoxysilane, 0.6 g of 0·1 decanoic acid and 72 g of deionized water were combined. The flask was refluxed for 4 hours. 57 g butanol, 88 g 2-propanol, 44 g acetone, 59 g ethanol, 9.5 g deionized water and 3·7 g 10% FC 430 (3 Μ, Minneapolis, MN) In solution. Thickness = 301 〇 A, n = 1.377, k = 0.163. -20- 64746-970318.doc This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) A7 B7

1298823 Example 1 2 Synthesis of absorbable s〇g containing 9-mercaptoethanol In a 1 liter: ^ bottle, 297 g of 2-propanol, i48 g of acetone, i23 g of TEOS, 77 g of MTEOS 10 g of 9-indole methanol were combined. The solution was refluxed for 6 hours. A mixture of 0.6 g of 0·1 nitric acid and 72 g of deionized water was added to the flask. The flask was refluxed for 4 hours. 57 g of butanol, 88 g of 2-propanol, 44 g of acetone, ethanol, 9.5 g of deionized water, and 3.75 g of 1% by weight of FC 43 (3 M Company, Minneapolis's Μ N) were added to this solution. Example 1 3 Synthesis of Absorbing s〇g Containing 9-Ci Carboxy-Methyltriethoxyoxane In a 1 liter flask, 297 g 2 -propanol, 148 g acetone, 90 g TMOS, 59 g MTMOS, 60 g 9-oxime carboxymethyltriethoxy decane, 〇6 g 〇"M nitrate Ssl and 72 g deionized water were combined. The flask was refluxed for 4 hours. 11 5 hydroxybutanol, 488 g 2-propanol, 245 g acetone, 329 g ethanol, 53 g deionized water and 3.8 g 10% FC 430 (3 M Company, Minneapolis, MN) were added to this solution. . Example 1 Synthesis of 4 9 -fluorene carboxy-methyltriethoxy decane In a 2 liter flask, 9 〇g 9 蒽 carboxylic acid, 86.0 liters of chloromethyltriethoxylate, which had been dried on a 4 molecular sieve. Hydrane, 66 ml of triethylamine and ι·25 [mercaptoisobutanol (MIBK) were stirred, heated slowly to reflux and reflux for 8.5 hours. The solution was transferred to a 2xL Teflon bottle and left overnight. A large amount of solid precipitate is formed. The MIBK solution was decanted and rotary evaporated to approximately 20 〇 g. Add the same amount of simmer and mix. A precipitate formed. Preparation with 2〇% ethyl acetate / 8〇%. hexane 64746-970318.doc This paper scale applies to China National Standard (CNS) A4 specification (210X 297 metric tons) A7 B7 1298823 V. Description of invention (19) Slurry 1.75 X diameter X 2 吋 high 矽 hose column. The MIBK/hexane solution was passed through a tube under pressure and the column was washed with 800 liters of 20% ethyl acetate / 8 〇〇 / 0 hexane. The solution was filtered to 0.2 /zm and rotary evaporated. When the solvent stopped, the temperature rose to 35 ° C for 60 minutes. A dark amber oily liquid product (85 g) is obtained. Example 1 5 Synthesis of 9-蒽carboxy-methyltriethoxy oxime absorption s〇g in a 1 liter flask '297 g (4.798 mol) ), 2-propanol, 148 g (2.558 mol) acetone, 123 g (0.593 mol) TEOS, 77 g (0.432 mol) MTEOS, 45 g (0.102 mol) 9-fluorene carboxy-methyl triethyl Oxane, 〇6 g 0.1 Μ nitric acid and 72 g (3.716 mol) deionized water were combined. The flask was refluxed for 4 hours. 43 g (0.590 mol) butanol and 1260 g (8·344 mol) of ethyl lactate were added to this solution. Thickness = 1156 乂, η = ι·5〇2, k = 0.446 Example 1 6 Synthesis of Absorbent s〇g containing 9-fluorene carboxy-methyltriethoxy decane In a 1 liter flask, 297 g (4· 798 mol), 2-propanol, 148 g (2.558 mol) acetone, 123 g (〇·593 mol) TEOS, 77 g (0.432 mol) MTEOS, 30 g (0.102 mol) 9·蒽carboxyl Methyltriethoxyoxane, 〇6 g 0·1 ΜNitrate and 72 g (3.716 mol) deionized water were combined. The flask was refluxed for 4 hours. 57 g (0.769 mol) butanol, 88 g (1·422 mol) 2_propanol, 44 g (0.758 mol) acetone, 59 g (1 227 mol) ethanol, 9 5 g (0.528 mol) Deionized water and 3 7 g of 1〇% FC 43〇 were added to this solution. Thickness = 1385 Again, n = 1.324, k = 0.533. Example 1 7 64746-970318.doc

A7 B7 1298823 V. INSTRUCTIONS (20) Synthesis of Absorbent s〇G containing 9-fluorene carboxy-methyltriethoxy decane in a 1 liter flask, 297 g (4.798 mol), 2-propanol, 148 g (2.558 mol) acetone, 123 g (0.593 mol) TEOS, 77 g (0.432 mol) MTEOS, 45 (0.102 mol) 9 · 蒽 carboxy-methyl triethoxy decane, 〇 6 § 0·1 Niobium nitrate and 72 g (3.716 mol) of deionized water were combined. The flask was refluxed for 4 hours. 43 g (0.590 mol) butanol and 981 g (8 3 〇 1 mol) propanol are added to this solution. Thickness = 1407 and η = 1 334, k = 〇 551. Example 1 8 Synthesis of Absorbing s〇G containing 9-fluorene-methyl-triethoxy oxime-- A 6xL jacketed reactor without nitrogen inlet, dry ice condenser and mechanical stirrer was charged with 5000 mL of hexane, 720 mL ethanol, 65 mL water and 12 〇g 10% by weight vaporized tetrabutylammonium hydrate solution in water. The mixture was equilibrated under a pressure of 0.5 for 0.5 hours. Trichloromethane (377·4 g, 2.78 mol), mercaptotrioxane (277.7 g, 1.86 mol) and 9-蒽carboxy-methyltriethoxydecane (203.8 g, 0.46 mol) The mixture was added to the reactor using a peristaltic pump for 70 minutes. When the addition of decane to the absorbing compound is complete, hexane is pumped through the line for 10 minutes. The reaction was stirred for 2.3 hours, the ethanol/Η" layer was removed, and the residual hexane solution was passed through a 3 micron (/Zm) filter and then filtered through a 1//m filter. (3957 g, 45·92 mol) hexane was added to this solution. Example 1 9 Synthesis of Absorbent s〇g containing 9-fluorene carboxy-methyltriethoxylate in a 5 liter flask '508.8 g (3.10 mol) triethoxy oxime (HTEOS), 135.8 g ( 0.31 moles of 9-fluorene carboxymethyltriethoxy decane and 5 〇 88 g (8.77 moles) of acetone were mixed by magnetic stirring and cooled to 2 〇〇c or less. 5〇8 8 g 64746-970318.doc _23_ This paper scale applies to China National Standard (CNS) A4 specification (210X297 dongdong) A7 B7 1298823 V. Invention description (21) (8.77 Moer) C _, 46.69 § (2.59 Moir 112 〇, 〇〇〇〇9 莫·^ 〇.〇2 N nitric acid and 37.03 g (2.06 mol) deionized water mixture was slowly added to the mixture in a 5 liter flask through a liquid funnel for 45 minutes. Keep the temperature below 20 ° C. The solution was refluxed for 8 hours. 4631 g (3 〇 67 moles of ethyl ester was added to the solution. Example 2 0 The synthesis of the absorption gj〇G containing the base diethoxylate In a 1 liter flask, 297 g (4.798 mol), 2-propanol, 148 g (2 558 mol) acetone, 123 g (0.593 mol) TEOS, 104 g (0·432 mol) phenyl triethyl Oxy decane, 0.6 g 0.1 Μ nitric acid and 72 g (3.716 mol) of deionized water were combined. The flask was refluxed for 4 hours. 57 g (〇769 mol) butanol, Μ g (1.422 mol) 2-propanol 44 g (0.758 mol) acetone, 59 g (1 227 mol) ethanol, 9·5 g (〇·528 mol) deionized water was added to the solution. Thickness = 1727 Α, η = 1 957, k =0.384. Example 2 1 Absorption of phenyltriethoxyoxane 8 合成 in a 1 liter flask, 297 g (4.798 moles), 2-propanol, 148 g (2.558 moles) of acetone, 93 g (0.448 moles) TEOS, 37 g (0.209 mol) MTEOS, 100 g (0.418 mol) phenyl triethoxy decane, hydrazine 6 g hydrazine nitric acid and 72 g (3.716 mol) deionized water were combined. The flask was refluxed for 4 hours. 57 g (0.769 mol) butanol, 88 g (1 422 mol) 2; alcohol, 44 g (0.758 mol) acetone, 59 g (1.227 mol) ethanol, 9·5 g (0·528 mol) Deionized water was added to the solution. Thickness = 1325 and 14.923, k = 0.364. Example 2 2 64746-970318.doc

1298823

Synthesis of Absorbent SOG Containing Phenyltriethoxyoxane in a 1 liter flask, 297 g (4.798 moles), 2-propanol, 148 g (2 558 moles) of acetone, 119 g (0.573 moles) TE 〇s, 27 g (〇153 mol) MTEOS, 74 g (0.306 mol) phenyl triethoxy I, 〇6 g ^ acid and 72 g (3.716 mol) deionized water were combined. The flask was refluxed for 4 hours. 57 g (0.769 mol) butanol, 88 g (1 422 mol) 2_propanol, feed g (0.758 mol) acetone, 59 g (1.227 mol) ethanol, 9.5 g (0.528 mol) deionized Water is added to this solution. Thickness = 1286 and n = 1.889, divination 286. Example 2 3 Synthesis of Absorbent S〇g Containing Phenyltriethoxyoxane In a 1 liter flask, 297 g (4.798 mol), 2-propanol, 148 g (2.558 mol) acetone, 73 g (0.351 Mole) TEOS, 45 g (0.251 mol) MTEOS, 121 g (0.503 mol) phenyl triethoxy decane, 〇6 g 〇"] nitric acid and 72 g (3·716 mol) deionized water combination. The flask was refluxed for 4 hours. 57 g (0.769 mol) butanol, 88 g (1.422 mol) 2-propanol, 44 g (0.758 mol) acetone, 59 g (1.227 mol) ethanol, 9.5 g (0.528 mol) deionized water Add to this solution. Thickness = 1 〇 47 again, n = 1 993, k = 378 378. Example 2 4 Synthesis of Absorbent SOG Containing Phenyltriethoxyoxane with 2-Hydroxy-4(3-Triethoxycarbonylpropoxy)-benzophenone In a 1 liter flask, 297 g (4.798 mol) ), 2-propanol, 148 g (2_558 mol) acetone, 73 g (〇·351 mol) TEOS, 45 g (0.251 mol) MTEOS, 103 g (0.428 mol) phenyl triethoxy decane, 12 g (0.0298 mol) 2 -hydroxy-4(3-triethoxymethanepropaneoxy)-benzophenone, 0.6 g -25- 64746-970318.doc This paper scale applies to the Chinese National Standard (CNS) A4 Specifications (210X 297 mm) 1298823 ________B7 V. INSTRUCTIONS (23) 〇&1 Μ Nitric acid and 72 g (3.716 mol) deionized water are combined. The flask was returned to the hour. 57 g (0.769 mol) butanol, 88 g (1.422 mol) propanol, 44 g (0.758 mol) acetone, 59 g (1 227 mol) ethanol, 9·5 g (〇_528 mol) Deionized water is added to this solution. Thickness = isi4 again, n = 1.969, k = 0.325. Although the present invention has been described with reference to the specific examples, the description is merely illustrative of the application of the invention and should not be construed as limiting. Various modifications and combinations of the features of the disclosed examples are within the scope of the invention as defined by the appended claims. 64746-970318.doc

Claims (1)

1298823 A8 B8 C8 D8 VI. Patent Application 1 · An absorbent spin-on glass composition comprising an anthraquinone polymer and a miscible organic absorbing compound which can be in a wide wavelength range of at least about i 0 nm The light is strongly absorbed in a range of wavelengths below about 375 nm, wherein the organically absorbable compound comprises from one to three stupid rings and a reactive group selected from the group consisting of hydroxyl groups, amine groups, carboxylic acid groups, and hydrazine linkages. a group consisting of at least one formazan group selected from the group consisting of a group of alkoxy groups and halogen atoms. 2. A composition according to the scope of claim 1 wherein the range is less than about 260 nm. 3. The composition according to claim 1, wherein the organic absorbing compound comprises a reactive group selected from the group consisting of ruthenium ethoxylate, ruthenium diethoxy, ruthenium triethoxy, and armor. A group consisting of an oxy group, a decyldimethoxy group, a ruthenium trimethoxy group, a gas methyl sulfonyl group, a chlorinated alkyl group, and a trihaloalkylene group. The composition of claim 3, wherein the organically absorbable compound comprises a ruthenium triethoxy reactive group. Wherein the reactive group is directly wherein the reactive group is permeated through the hydrocarbon. According to the composition of claim 1, the bond is bonded to the benzene ring. 6 · The composition according to item 1 of the patent application is bridged to the benzene ring. 7. According to the scope of the patent application! The composition of the invention, wherein the organic absorbent compound further comprises an azo group. 8. The composition according to claim 7, wherein the organic substance comprises an absorbent compound selected from the group consisting of 2, a heart-absorbable hydroxamic acid 64746-970318.doc 1298823 A8 B8 C8 D8 VI. Application for patented garden (anthraflavic acid), 9-anthracene carboxylic acid, 9-anthracene methanol, alizarin, S Kunyu, primrose, 2-hydroxy-4 (3-triethoxy) Decanepropoxy)-benzophenone, rosacenic acid, triethoxymethyl decyl propyl imine, 9-fluorenyl-methyl triethoxy decane, benzene tomb triethoxy decane, 4 phenyl a group of azophenols and mixtures thereof. 9. The composition according to claim 1, wherein the organic absorbing compound comprises an absorbing compound selected from the group consisting of 9 蒽 methanol, alizarin, hydrazine, 2-hydroxy-4 (3-triethoxy) a group consisting of decane propoxy benzophenone, rose quinone 9-indole-methyl diethoxylate, phenyl triethoxylate and a mixture thereof. The composition of claim 9, wherein the organic absorbing compound comprises a ninth oxime-methyl ethoxy oxime. 11. The composition according to claim 9 wherein the organic absorbing compound comprises phenyltriethoxy decane. 12. The composition according to claim ii, wherein the siloxane polymer is a polymer selected from the group consisting of mercapto oxiranes, mercapto sesquioxanes, phenyl siloxanes, benzenes. a group consisting of sesquioxanes, nonylphenyl sulfoxane, nonylphenyl sesquioxanes, and phthalate polymers. Soil 13. According to the composition of claim 1G of the patent scope, Wherein the oxy-oxygenated polymer is a polymer selected from the group consisting of mercaptooxynonane, methyl sesquioxanes, and phenyl groups. a group consisting of Shixi Oxygen, phenyl (tetra) hemioxide, methyl phenyl oxymethane, phenyl sulfonium sesquioxane and bismuth silicate polymers. Soil 14. According to the scope of application patent item i a composition wherein the siloxane is polymerized from the group consisting of hydroquinone, hydroquinone sesquioxane, organohydrogenated oxane, and 64746-970318.doc 1298823 a polymer of a group consisting of an organic hydrogenated sesquioxane polymer; and a copolymer of hydroquinone sesquioxane with an alkoxy hydride or a hydroxyhydrogen hydride. 15. The composition of claim 14, wherein the oxy-fired polymer is a polymer selected from the group consisting of: 2·0) χ, wherein X is greater than about 8, and (H( M 〇Si〇i 5 2 〇)n(R〇i 〇Si〇i 2.0) m, wherein m is greater than 〇, the total number of 11 and 111 is from about 8 to about 5 Å and R is a Ci-C 2 fluorenyl or C6-C12 aryl group. 16. The composition of item i, 2, 3, 8, 9, 1 , 12 or 13 of the patent application' is used in an integrated circuit device. 17. A coating solution comprising an absorbent spin-on glass composition according to item ii of the patent application and a solvent or solvent mixture. The coating solution according to item 7 of the patent application, wherein the solution is an absorbent spin-on glass composition of between about 5 and about 20% by weight. 19. The coating solution according to item 8 of the patent application, wherein the solvent is selected from the group consisting of ethyl lactate and propylene glycol propyl ether. 20. A coating solution according to item 7 of the patent application, which is for use in a device. The coating solution according to claim 2, wherein the coating solution comprises about 1% by weight and about 2% by weight of the bismuth absorbent spin-on glass composition. 22. The coating solution of claim 2, wherein at least a portion of the spin-on glass composition is selectively removable. 23. A film comprising an absorbent spin-on glass composition comprising an agglomerated polymer and a miscible organically absorbable compound, which may be at least 64746-970318.doc 1298823 - C8 _;___D8 Patent application scope ~^ The turtle has a wide wavelength range of about 10 nm and strongly absorbs light in a wavelength range of less than about 375 nm. The organic absorbing compound contains one to three benzene rings and a reactive group selected from a group consisting of a hydroxyl group, an amine group, a carboxylic acid group, and a methoxyalkyl group bonded to at least one substituent selected from the group consisting of an alkano group and a _ atom. 24. A film according to claim 23, wherein the range is less than about 26 〇 nm. 25. The film according to claim 23, wherein the organic absorbing compound comprises an absorbing compound selected from the group consisting of 2,6-dihydroxy phthalic acid, 9 _ carboxylic acid, 9 蒽 蒽 methanol, 茜 、, Bismuth, primrose, 2-hydroxy·4(3-diethoxymethylglycolate)-benzophenone, rosacenic acid, triethoxymethyl ketone propyl 1,8-anthracene A group of imines, 9-fluorene carboxy-methyltriethoxy decane, and mixtures thereof. 26. The film according to claim 23, wherein the organic absorbing compound comprises an absorbing compound selected from the group consisting of 9 蒽 蒽 methanol, 茜 酉, 酉 茜 茜, primula, 2-hydroxy-4 (3- a group consisting of triethoxymethane propane benzophenone, rosmarinic acid, 9-fluorene carboxymethyltriethoxy decane, and mixtures thereof. 27. A film according to claim 23, wherein the organic The absorbing compound comprises 9-fluorene carboxy-methyltriethoxy decane. 28. The film according to claim 23, wherein the oxaxy oxane polymer is a polymer comprising methyl decane, methyl hydrazine. Silsesquioxanes, methyl phenyl siloxanes, phenyl siloxanes, methyl phenyl sesquioxanes and strontium salt polymers. 64746-970318.doc A8 B8 C8 D8 1298823 VI. Scope of application 29. The film according to claim 26, wherein the siloxane polymer is a polymer comprising mercapto oxirane, methyl sesquioxanes, methyl groups Phenyl oxirane, phenyl sulfoxane, methyl phenyl sesquioxane and bismuth salt polymers. 30. The film of claim 23, wherein at least a portion of the spin-on glass composition is selectively removable. 31. The film of claim 23, wherein at least one benzene ring comprises two or three fused benzene rings. 32. A film comprising a coating solution and a solvent comprising a spin-on glass composition according to claim 1 of the scope of the patent application. 33. The film of claim 32, wherein the coating solution comprises between about 1% and about 20% by weight of the absorbent spin-on glass composition. 34. A method of making an absorbent spin-on glass composition, comprising: combining one or more decane reactants selected from the group consisting of alkoxy decane and decane, one or more miscible organic absorbing compounds, An acid/water mixture and one or more solvents forming a reaction mixture; and refluxing the reaction mixture to form an absorbent spin-on glass composition, wherein the organically absorbable compound comprises one to three benzene rings and a reactive group, the reactive group A group consisting of a hydroxyl group, an amine group, a carboxylic acid group, and a germyl group bonded to at least one substituent selected from the group consisting of an alkoxy group and a tooth atom is selected. 35. The method of claim 34, wherein the one or more organic absorbing compounds further comprise an azo group. 36. According to the method of claim 35, one or more of the organic 64746-970318.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1298823 g C8 __ D8 VI. Patent application scope The absorbent compound comprises an absorbent compound selected from the group consisting of 2,6-diperic acid, 9-anthracene carboxylic acid, 9-anthracene methanol, alizarin, anthraquinone, primulin, 2-hydroxy-4 ( 3-triethoxymethanepropanyloxy)-benzophenone, rosacenic acid, triethoxymethyl decyl propyl-1,8- quinone imine, 9-fluorene carboxy-fluorenyl triethoxy decane, phenyl A group consisting of triethoxy decane, 4-phenyl azophenol, and mixtures thereof. 37. The method according to claim 34, wherein one or more of the ceramsite reactants are selected from the group consisting of triethoxy decane, tetraethoxy decane, methyl triethoxy oxane, dimethyl diethoxy Decane, tetramethoxy decane, methyl methoxy sulfoxide, trimethoxy decane, dimethyl dimethoxide, phenyl triethoxy oxane, phenyl trimethoxy decane, diphenyl diethoxy Decane and diphenyl dimethoxy decane, trichloro decane, decyl trioxane, ethyl trigas sulphate, phenyl triphos, sulphur tetrachloride, chlorotriethoxy sulphur, chlorine Trimethoxy decane, chloromethyltriethoxy decane, chloroethyltriethoxylate, chlorophenyltriethoxy decane, chloromethyltrimethoxy decane, chloroethyltrimethoxy decane, and chlorophenyltrimethoxy decane The group formed. 38. The method of claim 37, wherein one or more of the smelting reactants are tetraethoxy decane and methyltriethoxy oxime. 39. The method of claim 34, wherein the acid/water mixture is a nitric acid/water mixture. 40. A method of making an absorbent spin-on glass composition, comprising: combining one or more anthracites, or one or more decanes; one or more miscible organic absorbing compounds; and one or more Solvent to form the first reaction mixture; -6 - 64746-970318.doc This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1298823 A8 B8 C8 D8 VI. Patent application scope reflux first reaction mixture Adding an acid/water mixture to the first reaction mixture to form a second reaction mixture; refluxing the second reaction mixture to form a gray-collective spin-on glass composition, wherein the organically absorbable compound comprises one to three benzene rings and a reactivity The reactive group is selected from the group consisting of a hydroxyl group, an amine group, a carboxylic acid group, and a methoxyalkyl group bonded to at least one substituent selected from the group consisting of alkoxy groups and halogen atoms. 41. A method of making a coating solution comprising an absorbent spin-on glass polymer, comprising: combining one or more alkoxydecanes, or one or more decyl decanes; one or more miscible organic absorbing compounds; acid/ a water mixture; and one or more solvents to form a reaction mixture; and refluxing the reaction mixture to form an absorbent spin-on glass polymer, wherein the organically absorbable compound comprises one to three benzene rings and a reactive group, and the reactive group is selected a group consisting of a free hydroxyl group, an amine group, a carboxylic acid group, and a ruthenium group bonded to at least one substituent selected from the group consisting of an alkoxy group and a halogen atom. 42. The method of claim 41, further comprising adding one or more diluent solvents to the absorbent spin-on glass composition to produce a coating solution. 43. The method of claim 4, wherein the coating solution is between about 0.5% and about 20% of an absorbent spin-on glass polymer. 44. A method of making an absorbent spin-on glass composition comprising: 64746-970318.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1298823 - C8 D8 _____ VI. Patent application Combining a polar solvent, a non-polar solvent, and a phase transfer catalyst to form a first reaction mixture; adding an organotrihalomethane, a hydrogenated decane, and one or more miscible organic absorbing compounds to the first reaction mixture to form a second a reaction mixture; and reacting the second reaction mixture to form an absorbent spin-on glass composition, wherein the organically absorbable compound comprises one to three benzene rings and a reactive group selected from the group consisting of hydroxyl groups, amine groups, a group consisting of a carboxylic acid group and a decyl group bonded to at least one substituent selected from the group consisting of alkoxy groups and halogen atoms. 45. An organically absorbable compound which is 9 蒽 carboxy-methyltriethoxy oxime. 46. A method for producing 9-fluorene carboxy-methyltriethoxy decane, comprising: combining 9-fluorene carboxylic acid, chloromethyltriethoxy decane, triethylamine, and a solvent to form a reaction deer; The reaction mixture is cooled to reflux the reaction mixture to form a precipitate and a residual solution; and the residual solution is filtered to give a liquid 9-hydrazine carboxymethyltriethoxy decane. 47. The method according to claim 46, wherein the filtering residual solution comprises: rotary evaporation of the residual solution; passing the rotary evaporated solution through a gel column; and rotary evaporation of the solution through the gel column. 64746-970318.doc This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)